KR930005546A - Crude Chickle Refining Process - Google Patents
Crude Chickle Refining Process Download PDFInfo
- Publication number
- KR930005546A KR930005546A KR1019910017046A KR910017046A KR930005546A KR 930005546 A KR930005546 A KR 930005546A KR 1019910017046 A KR1019910017046 A KR 1019910017046A KR 910017046 A KR910017046 A KR 910017046A KR 930005546 A KR930005546 A KR 930005546A
- Authority
- KR
- South Korea
- Prior art keywords
- crude
- chickle
- wax
- washing
- hot water
- Prior art date
Links
Classifications
-
- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23G—COCOA; COCOA PRODUCTS, e.g. CHOCOLATE; SUBSTITUTES FOR COCOA OR COCOA PRODUCTS; CONFECTIONERY; CHEWING GUM; ICE-CREAM; PREPARATION THEREOF
- A23G4/00—Chewing gum
- A23G4/06—Chewing gum characterised by the composition containing organic or inorganic compounds
-
- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23G—COCOA; COCOA PRODUCTS, e.g. CHOCOLATE; SUBSTITUTES FOR COCOA OR COCOA PRODUCTS; CONFECTIONERY; CHEWING GUM; ICE-CREAM; PREPARATION THEREOF
- A23G4/00—Chewing gum
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Polymers & Plastics (AREA)
- Inorganic Chemistry (AREA)
- Fats And Perfumes (AREA)
- Peptides Or Proteins (AREA)
- Confectionery (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
크루드 치클을 분쇄하여 반응기에 투입, 열수세척, 수세, 가열 및 탈수한 다음 마이크로 크리스탈린 왁스를 첨가하고 탈수 여과 및 냉각 성형하여 크루드 치클을 정제 가공함에 있어서, 열수 세척시 농도 1.5~3%(W/W)의 제3인산 나트륨 수용액을 크루드 치클의 195~125%(W/W)사용하고, 마이크로 크리스탈린 왁스로 융점이 77~82℃, 연화점이 69~74℃인 마이크로 크리스탈린 왁스를 크루드 치클의 고형분에 대하여 20~30%(W/W) 첨가함을 특징으로 하는 크루드치클의 정제가공방법.In the process of refining the crude chickle by crushing the crude chickle, adding it to the reactor, washing with hot water, washing with water, heating and dehydrating, adding microcrystalline wax, dehydrating filtration and cold forming, the concentration is 1.5 to 3% when washing the hot water. (W / W) Trisodium Phosphate Aqueous Solution Using 195-125% (W / W) of Crude Chickle, Using Micro Crystalline Wax, Micro Crystalline with Melting Point of 77 ~ 82 ℃ and Softening Point of 69 ~ 74 ℃ A process for refining crude crucibles, wherein the wax is added in an amount of 20 to 30% (W / W) based on the solid content of the cruel chip.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910017046A KR940004843B1 (en) | 1991-09-30 | 1991-09-30 | Method of refining crude chicle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910017046A KR940004843B1 (en) | 1991-09-30 | 1991-09-30 | Method of refining crude chicle |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930005546A true KR930005546A (en) | 1993-04-20 |
KR940004843B1 KR940004843B1 (en) | 1994-06-02 |
Family
ID=19320530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910017046A KR940004843B1 (en) | 1991-09-30 | 1991-09-30 | Method of refining crude chicle |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940004843B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666719B2 (en) | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10937897B2 (en) | 2008-07-31 | 2021-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1991
- 1991-09-30 KR KR1019910017046A patent/KR940004843B1/en not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666719B2 (en) | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10559695B2 (en) | 2008-07-31 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10930792B2 (en) | 2008-07-31 | 2021-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10937897B2 (en) | 2008-07-31 | 2021-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR940004843B1 (en) | 1994-06-02 |
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Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080528 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |