KR930002350Y1 - Abnormal voltage detecting circuit - Google Patents
Abnormal voltage detecting circuit Download PDFInfo
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- KR930002350Y1 KR930002350Y1 KR2019880015485U KR880015485U KR930002350Y1 KR 930002350 Y1 KR930002350 Y1 KR 930002350Y1 KR 2019880015485 U KR2019880015485 U KR 2019880015485U KR 880015485 U KR880015485 U KR 880015485U KR 930002350 Y1 KR930002350 Y1 KR 930002350Y1
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- South Korea
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- voltage
- transistor
- supply
- resistor
- detector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
Abstract
내용 없음.No content.
Description
제1도는 종래의 검출회로도.1 is a conventional detection circuit diagram.
제2도는 본 고안의 검출회로도.2 is a detection circuit diagram of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 비교기 2 : 검출기1: Comparator 2: Detector
ES : 공급전원 Q1-Q6, Q11 : 트랜지스터ES: Power Supply Q1-Q6, Q11: Transistor
Vref : 기준전압Vref: reference voltage
본 고안은 공급전원의 전압변동을 검출하기 위해 집적 회로화한 이상전압 검출회로에 관한 것으로, 특히 공급전원전압이 낮아지거나 높아지는 경우 모두를 검출하는 이상전압 검출회로에 관한 것이다.The present invention relates to an abnormal voltage detection circuit integrated into a circuit for detecting a voltage change of a power supply, and more particularly, to an abnormal voltage detection circuit that detects both cases when the supply power supply voltage is low or high.
종래에는 제1도에 도시한 바와같이 공급전원(ES)이 저항(R3)을 통해 트랜지스터(Q1, Q2)의 에미터와 공통접속되고, 이들 트랜지스터(Q1), (Q2)의 콜렉터가 트랜지스터(Q3), (Q4)의 콜렉터에 각기 접속되는 비교기(1)의 비반전입력단자(+)에 공급전원(ES)전압을 저항(R1, R2)으로 분압하여 인가함과 아울러, 그 비교기(1)의 반전 입력단자(-)에 기준전압(ref)을 인가하며, 이의 출력단자를 트랜지스터(Q5)의 베이스에 접속하고, 저항(R4)을 통하는 공급전원(ES)이 상기 트랜지스터(Q5) 콜렉터의 접속점을 트랜지스터(Q6)의 베이스에 접속하고 상기 공급전원(ES)이 저항(R5) 및 검출기(2)를 통해 상기 트랜지스터(Q6)의 콜렉터에 인가되게 접속하여 구성한 것으로, 상기 검출기(2)에 고전위가 인가될 때 상기 공급전원(ES)전압은 정상이고, 저전위가 인가될 때 변동된 것이다.Conventionally, as shown in FIG. 1, the supply power source E S is commonly connected to the emitters of the transistors Q 1 and Q 2 through the resistor R 3 , and these transistors Q 1 and Q 2. ) Supply voltage (E S ) to the resistors (R 1 , R 2 ) at the non-inverting input terminal (+) of the comparator 1 connected to the collectors of transistors Q 3 and Q 4 , respectively. In addition to applying voltage, the reference voltage ref is applied to the inverting input terminal (-) of the comparator 1, and its output terminal is connected to the base of the transistor Q 5 , and the resistor R 4 is connected. The supply power source E S connects the connection point of the transistor Q 5 collector to the base of the transistor Q 6 , and the supply power source E S is connected through the resistor R 5 and the detector 2. It is configured to be connected to the collector of Q6, and when the high potential is applied to the detector 2, the supply power (ES) voltage is normal, and the low potential is applied. When it is fluctuated.
이와같은 종래의 검출회로는 공급전원(ES)전압이 정상일때 비교기(1)의 비반전입력단자(+)에 인가되는 전위가 반전입력단자(-)에 인가되는 기준전압(ref)보다 높게 설정되어 있으므로, 이의 출력단자에서 고전위가 출력되고, 이에 따라 트랜지스터(Q5)가 온되며, 트랜지스터(Q6)의 베이스에 저전위가 인가되어 이 트랜지스터(Q6)는 오프된다.In the conventional detection circuit as described above, when the supply voltage E S is normal, the potential applied to the non-inverting input terminal (+) of the comparator 1 is higher than the reference voltage ref applied to the inverting input terminal (-). Since it is set, the high potential is output from the output terminal thereof, the transistor Q5 is turned on, and a low potential is applied to the base of the transistor Q6 so that the transistor Q6 is turned off.
따라서 이때 공급전원(ES)의 고전위가 검출기(2)에 인가되어 공급전원(ES)전압이 정상임을 나타낸다. 한편 공급전원(ES)전압이 소정값이하로 낮아지면 비교기(1)의 비반전입력단자(+)에 인가되는 전위가 기준전압(ref)보다 낮아지므로 이 비교기(1)의 출력단자로부터 저전위가 출력되어 트랜지스터(Q5)가 오프되고, 이에 의해 트랜지스터(Q6)의 베이스에는 고전위가 인가된다. 따라서 이 트랜지스터(Q6)는 온되며 검출기(2)에 저전위가 인가됨으로써 공급전원(ES)전압이 변동되었음을 검출한다.Therefore, at this time, the high potential of the supply power source E S is applied to the detector 2 to indicate that the supply power source E S voltage is normal. On the other hand, when the supply voltage E S falls below a predetermined value, the potential applied to the non-inverting input terminal (+) of the comparator 1 becomes lower than the reference voltage ref , so that the low voltage from the output terminal of the comparator 1 The potential is output so that the transistor Q5 is turned off, thereby applying a high potential to the base of the transistor Q6. Accordingly, this transistor Q6 is turned on and a low potential is applied to the detector 2 to detect that the supply voltage E S has changed.
그러나 공급전원(ES)전압이 높아지면 비교기(1)의 비반전입력단자(+)에 인가되는 전위는, 상기한 공급전원(ES)전압이 정상일 때와 같이, 기준전압(ref)보다 높으므로 공급전원(ES)전압의 변동이 검출되지 않는 문제점이 있었다.However, when the supply power E S is increased, the potential applied to the non-inverting input terminal + of the comparator 1 is higher than the reference voltage ref , as when the supply power E S is normal. There was a problem that the fluctuation of the power supply E S voltage was not detected because it was high.
이와같은 문제점을 없애기 위해 본 고안은 공급전원(ES)전압이 높아져도 이의 변동이 검출되게 안출한 것으로서, 이를 첨부한 도면에 의하여 상세히 설명하면 다음과 같다.In order to eliminate such a problem, the present invention is designed to detect the fluctuation even when the supply power ( ES ) voltage is increased, which will be described in detail with reference to the accompanying drawings.
제2도는 본 고안의 검출회로도러서, 이에 도시한 바와같이 저항(R1, R2)에 의한 공급전원(ES)의 분압전압이 비교기(1)의 비반전입력단자(+)에 인가되어 반전입력단자(-)에 인가되는 기준전압(ref)과 비교됨으로써, 검출기(2)에 고전위 및 저전위가 인가됨에 따라 상기 공급전원(ES)이 정상임과 변동되었음을 각기 검출하기 위해 집적회로화한 이상전압 검출회로에 있어서, 상기 저항(R2)및 접지 사이에 저항(R11)을 접속하고, 이들 저항(R2, R11)의 접속점을 트랜지스터(Q11)의 베이스에 접속하며, 이의 콜렉터 및 에미터를 트랜지스터(Q6)의 콜렉터 및 에미터에 각각 접속함과 아울러, 공급전원(ES)을 저항(R5) 및 검출기(2)를 통해 상기 트랜지스터(Q6, Q11) 콜렉터의 접속점에 접속하여 구성한 것으로, 상기 저항(R11)의 저항값을 상기 저항(R1, R2)의 저항값보다 매우 작게 설정한다.2 is a detection circuit diagram of the present invention, in which the divided voltage of the supply power source E S by the resistors R 1 and R 2 is applied to the non-inverting input terminal (+) of the comparator 1 as shown in FIG. Compared with the reference voltage ref applied to the inverting input terminal (-), integrated to detect that the supply power E S is normal and varied as the high potential and the low potential are applied to the detector 2. In the circuited abnormal voltage detection circuit, a resistor (R 11 ) is connected between the resistor (R2) and ground, and a connection point of these resistors (R 2 , R 11 ) is connected to the base of the transistor (Q 11 ). And the collector and emitter thereof are connected to the collector and emitter of the transistor Q 6 , respectively, and the supply power E S is connected through the resistor R 5 and the detector 2 to the transistors Q 6 and Q. 11) configured to be connected to the connection point of the collector, the resistance (R the resistance value of the resistor 11) (R 1, R 2) The setting is very smaller than hanggap.
이와같이 구성한 본 고안의 작용 및 효과는 다음과 같다.The operation and effects of the present invention constructed as described above are as follows.
공급전원(ES)전압이 정상일때와 소정값이하로 낮아질 때, 저항(R11)에 저전위가 인가되어 트랜지스터(Q11)가 오프되나, 종래 검출회로에서와 같이 트랜지스터(Q6)가 오프, 온도며 검출기(2)에 고전위 및 저전위가 각기 인가되므로 공급전원(ES)전압이 정상임과 변동되었음이 검출된다.When the supply voltage E S is normal and lowers below a predetermined value, a low potential is applied to the resistor R 11 to turn off the transistor Q 11 , but as in the conventional detection circuit, the transistor Q 6 is turned off. It is detected that the supply voltage E S is normal and fluctuated since the high potential and the low potential are applied to the detector 2, respectively, when the temperature is off and the temperature is high.
그리고 공급전원(ES)전압이 높아지면, 비교기(1)의 비반전입력단자(+)에 인가되는 전위가 기준전압(ref)보다 높아 이 비교기(1)의 출력단자로부터 고전위가 출력되고, 트랜지스터(Q5)가 온되며, 트랜지스터(Q6)의 베이스에 저전위가 인가되므로 이 트랜지스터(Q6)는 오프된다. 그러나 저항(R11)에 인가되는 고전위에 의해 트랜지스터(Q11)가 온되며, 검출기(2)에 저전위가 인가되어 공급전원(ES)전압의 변동이 검출된다.And the supply voltage (E S), the voltage is increased when the comparator (1) the non-inverting input terminal (+) the potential applied is higher than the reference voltage (ref), the comparator (1) from the output terminal is the high potential and the output of the , and a transistor (Q 5) on, applied with the low potential to the base of the transistor (Q 6), so the transistor (Q 6) is turned off. However, the transistor Q 11 is turned on by the high potential applied to the resistor R 11 , and a low potential is applied to the detector 2 to detect a change in the supply voltage E S.
이상의 상세한 설명과 같이 본 고안은 공급전원(ES)전압이 낮아질 때 및 높아질 때 공급전원(ES)전압의 변동을 검출하는 효과가 있다.As above detailed description the present design has the effect of detecting the supply voltage (E S) when the voltage is low and high when the supply voltage (E S) of the voltage change.
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KR2019880015485U KR930002350Y1 (en) | 1988-09-21 | 1988-09-21 | Abnormal voltage detecting circuit |
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KR2019880015485U KR930002350Y1 (en) | 1988-09-21 | 1988-09-21 | Abnormal voltage detecting circuit |
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KR900007116U KR900007116U (en) | 1990-04-03 |
KR930002350Y1 true KR930002350Y1 (en) | 1993-05-06 |
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