KR920020209A - Heat radiation type gas sensor and its manufacturing method - Google Patents

Heat radiation type gas sensor and its manufacturing method Download PDF

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Publication number
KR920020209A
KR920020209A KR1019910006982A KR910006982A KR920020209A KR 920020209 A KR920020209 A KR 920020209A KR 1019910006982 A KR1019910006982 A KR 1019910006982A KR 910006982 A KR910006982 A KR 910006982A KR 920020209 A KR920020209 A KR 920020209A
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KR
South Korea
Prior art keywords
substrate
gas sensor
manufacturing
thermal conductivity
excellent thermal
Prior art date
Application number
KR1019910006982A
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Korean (ko)
Inventor
권창순
Original Assignee
강진구
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 강진구, 삼성전자 주식회사 filed Critical 강진구
Priority to KR1019910006982A priority Critical patent/KR920020209A/en
Publication of KR920020209A publication Critical patent/KR920020209A/en

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Abstract

내용 없음No content

Description

방열형 가스센서 및 이의 제조방법Heat radiation type gas sensor and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 방열형 가스센서의 단면도이며,2 is a cross-sectional view of the heat radiation type gas sensor of the present invention,

제3도는 본 발명의 방열형 가스센서의 기판용 시이트(sheet)이다.3 is a sheet for a substrate of the heat dissipation type gas sensor of the present invention.

Claims (6)

열전도성이 우수한 물질의 기판위에 발열체를 도포하고 또다른 열전도성이 우수한 물질의 기판을 적층하여 일체화시킨 다음, 소결하고 센서전극을 형성시키고 소부한 후, 리드선을 부착하고 감가스물을 도포하여 소결시킴을 특징으로 하는 방열형 가스센서의 제조방법.Applying a heating element on a substrate of a material having excellent thermal conductivity, stacking and integrating another substrate of a material having excellent thermal conductivity, then sintering, forming and burning a sensor electrode, and then sintering by attaching a lead wire and applying a gas sensitive material. Method of manufacturing a heat dissipation gas sensor characterized in that. 열전도성이 우수한 물질의 기판위에 발열체를 도포하고 또 다른 열전도성이 우수한 물질의 기판을 적층하여 일체화시킨 다음, 소결하고 센서전극을 형성시키고 소부한 후, 일체화된 기판을 스크래치-스크라이빙(scratch-scribing)하여 외곽이 둥근 미소셀을 제조하여 리드선을 부착하고 감가스물을 도포하여 소결시킴을 특징으로 하는 방열형 가스센서의 제조방법.Applying a heating element on a substrate of a material having excellent thermal conductivity, stacking and integrating another substrate of a material having excellent thermal conductivity, then sintering, forming and baking a sensor electrode, and then scratch-scribing the integrated substrate. -Scribing) to produce a rounded microcell, the method of manufacturing a heat-dissipating gas sensor characterized in that the lead wire is attached and the sensitized gas is coated to sinter. 제1항 또는 제2항에 있어서, 기판재는 AI2O3또는 뮬라이트(mulite)임을 특징으로 하는 방법.The method according to claim 1 or 2, wherein the substrate material is AI 2 O 3 or mullite. 제1항 또는 제2항에 있어서, 발열체는 W 또는 RuO2임을 특징으로 하는 방법.The method of claim 1 or 2, wherein the heating element is W or RuO 2 . 제1항 또는 제2항에 있어서, 기판의 소결온 저온소성법으로 1000℃에서 행함을 특징으로 하는 방법.The method according to claim 1 or 2, wherein the substrate is sintered at a low temperature firing method at 1000 占 폚. 제1항 또는 제2항의 방법으로 제조된 방열형 가스센서.A heat radiation type gas sensor manufactured by the method of claim 1 or 2. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910006982A 1991-04-30 1991-04-30 Heat radiation type gas sensor and its manufacturing method KR920020209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910006982A KR920020209A (en) 1991-04-30 1991-04-30 Heat radiation type gas sensor and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910006982A KR920020209A (en) 1991-04-30 1991-04-30 Heat radiation type gas sensor and its manufacturing method

Publications (1)

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KR920020209A true KR920020209A (en) 1992-11-20

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KR1019910006982A KR920020209A (en) 1991-04-30 1991-04-30 Heat radiation type gas sensor and its manufacturing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528537A (en) * 1993-03-31 1996-06-18 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528537A (en) * 1993-03-31 1996-06-18 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage
US5635747A (en) * 1993-03-31 1997-06-03 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage

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