KR920012533A - Horizontal Band Melt Single Crystal Growth Device Using Direct Monitoring Furnace - Google Patents

Horizontal Band Melt Single Crystal Growth Device Using Direct Monitoring Furnace Download PDF

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Publication number
KR920012533A
KR920012533A KR1019900020134A KR900020134A KR920012533A KR 920012533 A KR920012533 A KR 920012533A KR 1019900020134 A KR1019900020134 A KR 1019900020134A KR 900020134 A KR900020134 A KR 900020134A KR 920012533 A KR920012533 A KR 920012533A
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South Korea
Prior art keywords
furnace
single crystal
crystal growth
direct monitoring
heating wire
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KR1019900020134A
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Korean (ko)
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KR930006955B1 (en
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민석기
박용주
박승철
한철원
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박원희
한국과학기술연구원
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Priority to KR1019900020134A priority Critical patent/KR930006955B1/en
Priority to US07/689,167 priority patent/US5141721A/en
Priority to JP3323119A priority patent/JPH0672077B2/en
Publication of KR920012533A publication Critical patent/KR920012533A/en
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Publication of KR930006955B1 publication Critical patent/KR930006955B1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Abstract

내용 없음No content

Description

디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치Horizontal Band Melt Single Crystal Growth Device Using Direct Monitoring Furnace

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 수평대역용융 단결정 성장장치의 디렉트모니터링 전기로를 보인 정면도, 제2도는 본 발명 수평대역용융 간결정 성장장치의 전형적인 온도분포를 보인 그래프, 제3도는 본 발명의 디렉트모니터링 전기로 외측에 CCD촬상관을 성치한 상태를 보여주는 설명도.1 is a front view showing a direct-monitoring furnace of a horizontal band melting single crystal growth apparatus in accordance with the present invention, and FIG. 2 is a graph showing a typical temperature distribution of the horizontal band melting inter-crystal growth apparatus of the present invention, and FIG. 3 is a direct monitoring electric furnace of the present invention. An explanatory diagram showing a state where a CCD imaging tube is placed outside the furnace.

Claims (5)

저온부전기로와 고온부전기로로 이루어진 수평대역용융 단결정 성장장치에 있어서, 고온부 전기로로서의 디렉트 모니터링 전기로(1)가 내벽면에 금박막(2)이 도포되고 외벽면에 냉각수유출입구(3)(4)가 형성된 이중석영관(5)의 안쪽으로 원통형의 보호용석영관(6)이 설치되며 보호용석영관(6)의 내측으로 두 영역으로 구분된 스파이럴상의 주열선(7)이 장착되고, 주열선(7)의 내부에 주열선(7)과 동일중심축을 갖는 돌출대역 형성용 보조열선(11)이 설치되어 이루어짐을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치.In a horizontal band melting single crystal growth apparatus consisting of a low temperature furnace and a high temperature furnace, a direct monitoring furnace 1 as a high temperature furnace is coated with a gold thin film 2 on the inner wall and a coolant outlet 3 and 4 on the outer wall. A cylindrical protective quartz tube 6 is installed inside the double quartz tube 5 formed with spirals, and a spiral heating column 7 divided into two regions is installed inside the protective quartz tube 6, and a main heating line 7 is provided. Horizontal band melting single crystal growth apparatus using a direct monitoring electric furnace, characterized in that the auxiliary heating line for forming a protrusion band having the same center axis as the main heating line (7) is installed inside. 제2항에 있어서, 보조열선(11)은 각 열선상에 알루미나 스페이서(13) 끼워지고 양단부에 세라믹지지관(14)(14')이 형성되어 알루미나 스페이서(13)와 세라막지지관(14)(14')이 막대상 세라믹지지대(15)(15')에 접착 고정되을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치.The auxiliary heating wire (11) according to claim 2, wherein the auxiliary heating wire (11) is fitted with alumina spacers (13) on each of the heating wires, and ceramic support tubes (14) and (14 ') are formed at both ends thereof. A horizontal band melting single crystal growth apparatus using a direct monitoring electric furnace, characterized in that (14 ') is adhesively fixed to a rod-shaped ceramic support (15) (15'). 제1항에 있어서, 보조열선(11)은 알루미나 재질의 두개의 레일(12)(12')상에 장착되어 주열선(7)에 대한 보조열선(11)의 위치이동이 가능한 것을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치.The auxiliary heating wire (11) according to claim 1, characterized in that the auxiliary heating wire (11) is mounted on two rails (12, 12 ') made of alumina so that the auxiliary heating wire (11) can be moved relative to the main heating wire (7). Horizontal band melting single crystal growth apparatus using direct monitoring electric furnace. 제1항에 있어서, 고온부전기로내의 주열선(7)은 약 1200℃의 평평한 온도영역을 유지하며 보조열선(11)은 약 1250℃의 돌출대역을 형성하는 한편 저온부전기로는 약 1100℃의 온도분포를 유지함을 특징으로 하는 디렉트 모니터링 전기로를 이용한 단결정 성장장치.2. The main heating wire (7) in the high temperature auxiliary furnace maintains a flat temperature range of about 1200 DEG C, and the auxiliary heating wire (11) forms a protruding band of about 1250 DEG C., while the low temperature subsidiary has a temperature distribution of about 1100 DEG C. Single crystal growth apparatus using a direct monitoring furnace, characterized in that to maintain. 제1항에 있어서, 디렉크 모니터링 전기로(1)는 외측에 티브이 모니터와 연결된 CCD촬상관(27)이 설치됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치.The horizontal band melting single crystal growth apparatus using a direct monitoring electric furnace according to claim 1, wherein the direct monitoring electric furnace (1) is provided with a CCD imager (27) connected to a TV monitor on the outside. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900020134A 1990-12-07 1990-12-07 Apparatus for growing single-crystal KR930006955B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019900020134A KR930006955B1 (en) 1990-12-07 1990-12-07 Apparatus for growing single-crystal
US07/689,167 US5141721A (en) 1990-12-07 1991-04-22 Apparatus for growing a single crystal of a semiconductor compound by using a horizontal zone melt technique
JP3323119A JPH0672077B2 (en) 1990-12-07 1991-12-06 Horizontal zone melting single crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900020134A KR930006955B1 (en) 1990-12-07 1990-12-07 Apparatus for growing single-crystal

Publications (2)

Publication Number Publication Date
KR920012533A true KR920012533A (en) 1992-07-27
KR930006955B1 KR930006955B1 (en) 1993-07-24

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KR1019900020134A KR930006955B1 (en) 1990-12-07 1990-12-07 Apparatus for growing single-crystal

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US (1) US5141721A (en)
JP (1) JPH0672077B2 (en)
KR (1) KR930006955B1 (en)

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US6139627A (en) * 1998-09-21 2000-10-31 The University Of Akron Transparent multi-zone crystal growth furnace and method for controlling the same
DE102007028547B4 (en) * 2007-06-18 2009-10-08 Forschungsverbund Berlin E.V. Device for producing crystals from electrically conductive melts
KR101274437B1 (en) * 2010-12-30 2013-06-18 삼성코닝정밀소재 주식회사 Apparatus for manufacturing single crystal ingot
CN102392294B (en) * 2011-11-15 2014-04-09 中国科学院上海技术物理研究所 Horizontal vacuum zone-melting preparation method of high-purity semiconductor material
CN104962987B (en) * 2015-07-01 2017-09-26 哈尔滨工业大学 A kind of monocrystal growing furnace box heater of level in the brilliant preparation method of horizontal orientation area clinkering
CN108069456B (en) * 2017-12-28 2019-10-25 成都中建材光电材料有限公司 A kind of preparation method of cadmium telluride
CN113774489B (en) * 2021-07-30 2022-10-28 合肥天曜新材料科技有限公司 Growth device and growth method of indium phosphide single crystal

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US4907177A (en) * 1988-10-31 1990-03-06 Grumman Aerospace Corporation Computerized multi-zone crystal growth furnace precise temperature and heating control method

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US5141721A (en) 1992-08-25
JPH0672077B2 (en) 1994-09-14
KR930006955B1 (en) 1993-07-24
JPH0517281A (en) 1993-01-26

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