KR920008972A - Capacitor manufacturing method of highly integrated Morse memory element - Google Patents

Capacitor manufacturing method of highly integrated Morse memory element

Info

Publication number
KR920008972A
KR920008972A KR1019900016281A KR900016281A KR920008972A KR 920008972 A KR920008972 A KR 920008972A KR 1019900016281 A KR1019900016281 A KR 1019900016281A KR 900016281 A KR900016281 A KR 900016281A KR 920008972 A KR920008972 A KR 920008972A
Authority
KR
South Korea
Prior art keywords
morse
memory element
highly integrated
capacitor manufacturing
capacitor
Prior art date
Application number
KR1019900016281A
Other languages
Korean (ko)
Other versions
KR930009580B1 (en
Inventor
김상균
김준식
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900016281A priority Critical patent/KR930009580B1/en
Publication of KR920008972A publication Critical patent/KR920008972A/en
Application granted granted Critical
Publication of KR930009580B1 publication Critical patent/KR930009580B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/82Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H01L28/87Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/75Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019900016281A 1990-10-13 1990-10-13 Method for manufacturing a lsi mos memory device with capacitor KR930009580B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016281A KR930009580B1 (en) 1990-10-13 1990-10-13 Method for manufacturing a lsi mos memory device with capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016281A KR930009580B1 (en) 1990-10-13 1990-10-13 Method for manufacturing a lsi mos memory device with capacitor

Publications (2)

Publication Number Publication Date
KR920008972A true KR920008972A (en) 1992-05-28
KR930009580B1 KR930009580B1 (en) 1993-10-07

Family

ID=19304626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016281A KR930009580B1 (en) 1990-10-13 1990-10-13 Method for manufacturing a lsi mos memory device with capacitor

Country Status (1)

Country Link
KR (1) KR930009580B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6640051B1 (en) 1999-07-13 2003-10-28 Jung-Sun Yoon Thermal treatment apparatus radiating low and high temperature

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6640051B1 (en) 1999-07-13 2003-10-28 Jung-Sun Yoon Thermal treatment apparatus radiating low and high temperature

Also Published As

Publication number Publication date
KR930009580B1 (en) 1993-10-07

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