KR920008888A - Method for forming impurity region of semiconductor - Google Patents

Method for forming impurity region of semiconductor

Info

Publication number
KR920008888A
KR920008888A KR1019900016249A KR900016249A KR920008888A KR 920008888 A KR920008888 A KR 920008888A KR 1019900016249 A KR1019900016249 A KR 1019900016249A KR 900016249 A KR900016249 A KR 900016249A KR 920008888 A KR920008888 A KR 920008888A
Authority
KR
South Korea
Prior art keywords
semiconductor
impurity region
forming impurity
forming
region
Prior art date
Application number
KR1019900016249A
Other languages
Korean (ko)
Other versions
KR930009477B1 (en
Inventor
김홍선
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900016249A priority Critical patent/KR930009477B1/en
Publication of KR920008888A publication Critical patent/KR920008888A/en
Application granted granted Critical
Publication of KR930009477B1 publication Critical patent/KR930009477B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019900016249A 1990-10-13 1990-10-13 Manufacturing method of impurity region in semiconductor device KR930009477B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016249A KR930009477B1 (en) 1990-10-13 1990-10-13 Manufacturing method of impurity region in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016249A KR930009477B1 (en) 1990-10-13 1990-10-13 Manufacturing method of impurity region in semiconductor device

Publications (2)

Publication Number Publication Date
KR920008888A true KR920008888A (en) 1992-05-28
KR930009477B1 KR930009477B1 (en) 1993-10-04

Family

ID=19304601

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016249A KR930009477B1 (en) 1990-10-13 1990-10-13 Manufacturing method of impurity region in semiconductor device

Country Status (1)

Country Link
KR (1) KR930009477B1 (en)

Also Published As

Publication number Publication date
KR930009477B1 (en) 1993-10-04

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Legal Events

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