KR920007519A - Thermal conductivity immersion cooling module and its cooling method - Google Patents

Thermal conductivity immersion cooling module and its cooling method Download PDF

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Publication number
KR920007519A
KR920007519A KR1019900013942A KR900013942A KR920007519A KR 920007519 A KR920007519 A KR 920007519A KR 1019900013942 A KR1019900013942 A KR 1019900013942A KR 900013942 A KR900013942 A KR 900013942A KR 920007519 A KR920007519 A KR 920007519A
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KR
South Korea
Prior art keywords
semiconductor chip
boiling
thermal diffusion
diffusion substrate
heat
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KR1019900013942A
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Korean (ko)
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곽호영
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곽호영
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Priority to KR1019900013942A priority Critical patent/KR920007519A/en
Publication of KR920007519A publication Critical patent/KR920007519A/en

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

내용 없음No content

Description

열전도 액침냉각모듈 및 그 냉각방법Thermal conductivity immersion cooling module and its cooling method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 풀(POOL)비등실험에서 한계열유속에 도달하면 상기 열유속의 별다른 증가없이 전자부품의 온도가 급격히 증가되는 것을 보여주는 그래프.FIG. 1 is a graph showing that when the limit heat flux is reached in a POOL boiling test, the temperature of an electronic component is rapidly increased without increasing the heat flux.

제2도는 본 발명의 1실시예에 관한 열전도액침냉각모듈이 인쇄회로 기판상에 설치되어 있는 단면도.2 is a cross-sectional view in which a thermally conductive liquid immersion cooling module according to an embodiment of the present invention is provided on a printed circuit board.

제3도는 제2도에 도시된 열전도액침냉각모듈이 열유속의 증가에 따라 비등현상이 일어나는 단계상태도.3 is a state diagram in which the boiling phenomenon occurs as the heat flux increases in the heat conduction liquid immersion cooling module shown in FIG.

Claims (3)

CHF가 105W/㎡정도인 유정성액체를 냉매로하여 106W/㎡에 상응하는 열유속을 가진 반도체칩(1)의 표면을 통한 비등열전달으로 냉각시키고, 상기 반도체칩(1)과 인쇄회로기판(4)사이에 고온과 전기적인 절연 및 열전도계수가 높은 접착제(2)를 매개로 상기 반도체칩(1)보다 더 큰 크기의 열확산기판(3)을 설치하며, 상기 유전성액체의 풀비등으로 상기 열확산기판(3)을 통한 상기 반도체칩(1)에서 상기 열확산기판(3)으로의 열전도를 통하여 상기 반도체칩(1)의 표면과 상기 열확산기판(3)의 표면을 통한 비등열전달이 이루어지도록 구성된 것을 특징으로 하는 열전도액침냉각모듈.Cooled by boiling heat transfer through the surface of the semiconductor chip 1 having a heat flux corresponding to 10 6 W / m 2 with an oil-based liquid having a CHF of about 10 5 W / m 2 as a refrigerant, and printing with the semiconductor chip 1. A thermal diffusion substrate 3 having a larger size than that of the semiconductor chip 1 is provided between the circuit board 4 via an adhesive 2 having high temperature, electrical insulation, and high thermal conductivity, and the pool boiling of the dielectric liquid is performed. Through the heat diffusion from the semiconductor chip 1 to the thermal diffusion substrate 3 through the thermal diffusion substrate 3, boiling heat transfer is performed through the surface of the semiconductor chip 1 and the surface of the thermal diffusion substrate 3. The thermal conductive liquid immersion cooling module, characterized in that the configuration. 반도체칩(1)의 표면에서 열유속 5-6×105W/㎡시막비등현상이 일어나는 단계와, 상기 반도체칩(1)의 위표면을 통해 비등에 의해 뺏기지 못하는 열이 그 밑면을 통하여 전도되는 단계, 열확산기판(3)의 표면을 통해 비등열전달이 이루어지는 단계, 상기 반도체칩(1)의 표면에서 박비등, 상기 열확산기판(3)의 표면에서 핵비등이 일어나는 단계 및 상기 반도체칩(1)의 표면뿐만 아니라 열확산기판(3)의 표면을 통해 격렬한 비등현상이 일어나는 단계로 이루어진 것을 특징으로 하는 열전도액침냉각방법.Heat flux 5-6 × 10 5 W / m 2 film boiling occurs on the surface of the semiconductor chip 1, and heat that cannot be dissipated by boiling through the upper surface of the semiconductor chip 1 conducts through the bottom thereof. And boiling heat transfer through the surface of the thermal diffusion substrate 3, thin boiling on the surface of the semiconductor chip 1, nuclear boiling on the surface of the thermal diffusion substrate 3, and the semiconductor chip 1. The thermal conduction liquid immersion cooling method, characterized in that it consists of a step of intense boiling phenomenon through the surface of the thermal diffusion substrate (3) as well as the surface. 제2항에 있어서, 상기 반도체칩(1)의 표면뿐만 아니라 열확산기판(3)의 표면을 통해 격렬한 비등현상이 일어나는 단계에서 최대의 열유속이 2×106W/㎡>인 것을 특징으로 하는 열전도액침냉각방법.3. The heat conduction according to claim 2, wherein the maximum heat flux is 2 × 10 6 W / m2> in the stage where the intense boiling phenomenon occurs not only on the surface of the semiconductor chip 1 but also on the surface of the thermal diffusion substrate 3. Immersion Cooling Method. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900013942A 1990-09-04 1990-09-04 Thermal conductivity immersion cooling module and its cooling method KR920007519A (en)

Priority Applications (1)

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KR1019900013942A KR920007519A (en) 1990-09-04 1990-09-04 Thermal conductivity immersion cooling module and its cooling method

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Application Number Priority Date Filing Date Title
KR1019900013942A KR920007519A (en) 1990-09-04 1990-09-04 Thermal conductivity immersion cooling module and its cooling method

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KR920007519A true KR920007519A (en) 1992-04-28

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411268B1 (en) * 1999-12-18 2003-12-18 주식회사 포스코 A neutralization method of alkaline leachate caused by slag
KR100765074B1 (en) * 2001-12-21 2007-10-09 주식회사 포스코 Stabilization method of steel dust containing pb using humus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411268B1 (en) * 1999-12-18 2003-12-18 주식회사 포스코 A neutralization method of alkaline leachate caused by slag
KR100765074B1 (en) * 2001-12-21 2007-10-09 주식회사 포스코 Stabilization method of steel dust containing pb using humus

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