KR920001578A - Manufacturing method of solid electrolytic capacitor - Google Patents

Manufacturing method of solid electrolytic capacitor Download PDF

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Publication number
KR920001578A
KR920001578A KR1019900009885A KR900009885A KR920001578A KR 920001578 A KR920001578 A KR 920001578A KR 1019900009885 A KR1019900009885 A KR 1019900009885A KR 900009885 A KR900009885 A KR 900009885A KR 920001578 A KR920001578 A KR 920001578A
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KR
South Korea
Prior art keywords
layer
electrolytic capacitor
solid electrolytic
manufacturing
producing
Prior art date
Application number
KR1019900009885A
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Korean (ko)
Inventor
박철우
Original Assignee
서주인
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 서주인, 삼성전기 주식회사 filed Critical 서주인
Priority to KR1019900009885A priority Critical patent/KR920001578A/en
Publication of KR920001578A publication Critical patent/KR920001578A/en

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Abstract

내용 없음No content

Description

고체전해 콘덴서의 제조방법Manufacturing method of solid electrolytic capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

도면은 고체 전해콘덴서의 개략 단면도이다.The figure is a schematic sectional drawing of a solid electrolytic capacitor.

Claims (1)

탄탈금속층(1)표면에 양극산화피막층(2)(Ta2O5)을 생성한 다음, 양극 산화피막층(2)상에 반도체층(MnO2)(3), 탄소층(4), 은페이스트층(5)등의 금속층을 순차적으로 형성하여 이루어지는 고체 전해콘덴서의 제조방법에 있어서, 소자를 상온으로 온도 조절된 질산망간(Mn(NO3)2)용액 중에 침지시켜, 상기한 양극산화피막층(2)상에 반도체층(3)을 형성시킨 다음, 100∼300℃의 고온 분위기하에 3∼5분간 유지시켜 열처리를 행함을 특징으로하는 고체 전해콘덴서의 제조방법.An anodized layer 2 (Ta 2 O 5 ) was formed on the surface of the tantalum metal layer 1, and then a semiconductor layer (MnO 2 ) (3), a carbon layer (4), and a silver paste were formed on the anodized layer (2). In the method for producing a solid electrolytic capacitor, which is formed by sequentially forming a metal layer such as the layer (5), the device is immersed in a solution of manganese nitrate (Mn (NO 3 ) 2 ) temperature-controlled to room temperature, and the anodic oxide film layer ( 2. A method for producing a solid electrolytic capacitor, characterized by forming a semiconductor layer (3) on 2), and then performing heat treatment by maintaining it for 3 to 5 minutes in a high temperature atmosphere at 100 to 300 캜. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900009885A 1990-06-30 1990-06-30 Manufacturing method of solid electrolytic capacitor KR920001578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900009885A KR920001578A (en) 1990-06-30 1990-06-30 Manufacturing method of solid electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900009885A KR920001578A (en) 1990-06-30 1990-06-30 Manufacturing method of solid electrolytic capacitor

Publications (1)

Publication Number Publication Date
KR920001578A true KR920001578A (en) 1992-01-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900009885A KR920001578A (en) 1990-06-30 1990-06-30 Manufacturing method of solid electrolytic capacitor

Country Status (1)

Country Link
KR (1) KR920001578A (en)

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