KR910016051A - 금속박막의 관리방법 - Google Patents

금속박막의 관리방법 Download PDF

Info

Publication number
KR910016051A
KR910016051A KR1019910002453A KR910002453A KR910016051A KR 910016051 A KR910016051 A KR 910016051A KR 1019910002453 A KR1019910002453 A KR 1019910002453A KR 910002453 A KR910002453 A KR 910002453A KR 910016051 A KR910016051 A KR 910016051A
Authority
KR
South Korea
Prior art keywords
metal thin
care
thin film
thin films
managing
Prior art date
Application number
KR1019910002453A
Other languages
English (en)
Other versions
KR930011897B1 (ko
Inventor
마사히로 아베
야스카즈 마세
도시히코 가츠라
마사하루 아오야마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910016051A publication Critical patent/KR910016051A/ko
Application granted granted Critical
Publication of KR930011897B1 publication Critical patent/KR930011897B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음

Description

금속박막의 관리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종축에 응력, 횡축에 온도를 채용하여 양자의 관계를 나타낸 도면, 제2도는 종축에 MTTF, 황축에 응력을 완화시키는 온도를 채용하여 안전 영역을 나타낸 도면이다.

Claims (3)

  1. 금속박막의 온도-내부 응력의 관계로부터 얻어지는 정보로부터 형성조건을 제어하는 것을 특징으로 하는 금속박막의 관리방법.
  2. 제1항에 있어서, 상기 얻어지는 정보가 응력의 완화온도인 것을 특징으로 하는 금속박막의 관리방법.
  3. 제1항에 있어서, 상기 제어되는 형성조건이 금속막중의 불순물량인 것을 특징으로 하는 금속박막의 관리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002453A 1990-02-15 1991-02-13 금속박막의 관리방법 KR930011897B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP02-034704 1990-02-15
JP3470490 1990-02-15
JP02-34704 1990-02-15

Publications (2)

Publication Number Publication Date
KR910016051A true KR910016051A (ko) 1991-09-30
KR930011897B1 KR930011897B1 (ko) 1993-12-22

Family

ID=12421745

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002453A KR930011897B1 (ko) 1990-02-15 1991-02-13 금속박막의 관리방법

Country Status (2)

Country Link
US (1) US5175115A (ko)
KR (1) KR930011897B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2672197B2 (ja) * 1991-04-24 1997-11-05 シャープ株式会社 金属配線膜の性能評価方法
US5907763A (en) * 1996-08-23 1999-05-25 International Business Machines Corporation Method and device to monitor integrated temperature in a heat cycle process
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
TWI223873B (en) * 1998-09-24 2004-11-11 Applied Materials Inc Nitrogen-containing tantalum films
US6526314B1 (en) * 1999-08-20 2003-02-25 Cardiac Pacemakers, Inc. Data management system for implantable cardiac device
US6941038B2 (en) 2003-03-25 2005-09-06 Hon Hai Precision Ind. Co., Ltd. Tunable optical fiber with compression ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837183A (en) * 1988-05-02 1989-06-06 Motorola Inc. Semiconductor device metallization process
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
US4975389A (en) * 1989-10-25 1990-12-04 At&T Bell Laboratories Aluminum metallization for semiconductor devices

Also Published As

Publication number Publication date
US5175115A (en) 1992-12-29
KR930011897B1 (ko) 1993-12-22

Similar Documents

Publication Publication Date Title
KR850006949A (ko) 정보기록 재생장치
KR950001504A (ko) 데이타 프로세싱 시스템의 사용자가 인터페이스 상의 슬라이더를 느슨하게 일군으로 만들기 위한 방법 및 장치
KR910016051A (ko) 금속박막의 관리방법
KR890015095A (ko) 비례-적분-미분 제어장치
KR920017635A (ko) 화장료
KR840001651A (ko) 폴리올레핀 모노필라멘트의 제조방법
KR910018586A (ko) 루틸(RuTile)단 결정의 제조방법
KR890007281A (ko) 만화 연속극의 방법
KR890000075A (ko) 액정과 펄을 이용한 화장료 제조방법
KR860000139A (ko) 수축성 pvc재생필름의 제조방법
KR910011428A (ko) 폴리에스터 필름의 제조방법
KR970005520A (ko) Reference-pulse 방법에서 기울기를 이용한 보간기
KR920006853A (ko) 컴퓨터 시스템의 리프레시 방법
KR920006548A (ko) 의료용 나이론사의 제조방법
KR910016829A (ko) 대전방지 필름 제조방법
KR910015955A (ko) 책장넘기기 간판
KR930013159A (ko) 내지문스트립 온도제어를 위한 rc팬 제어방법
KR890004443A (ko) 자기정렬 비정질규소 박막 트랜지스터 제조방법
KR930003050A (ko) 광자기 기록 매체
KR830003315A (ko) 압력민감(Pressure-sensitive)복사지의 제조방법
KR880001355A (ko) 다이캐스트기의 다이고정방법
KR830007380A (ko) 통조림 통의 개량제조 방법
KR830003205A (ko) 시원하고 상쾌한 비누의 제조방법
KR920003070A (ko) 칼라필터
KR930000565A (ko) 결정화 속도를 향상시킨 폴리에스테르의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20031128

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee