KR910013473A - Method of forming a transparent conductive film pattern using the lift-off method - Google Patents

Method of forming a transparent conductive film pattern using the lift-off method Download PDF

Info

Publication number
KR910013473A
KR910013473A KR1019890018413A KR890018413A KR910013473A KR 910013473 A KR910013473 A KR 910013473A KR 1019890018413 A KR1019890018413 A KR 1019890018413A KR 890018413 A KR890018413 A KR 890018413A KR 910013473 A KR910013473 A KR 910013473A
Authority
KR
South Korea
Prior art keywords
forming
conductive film
transparent conductive
film pattern
lift
Prior art date
Application number
KR1019890018413A
Other languages
Korean (ko)
Inventor
송준호
염홍기
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019890018413A priority Critical patent/KR910013473A/en
Publication of KR910013473A publication Critical patent/KR910013473A/en

Links

Landscapes

  • Manufacturing Of Electric Cables (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

내용 없음.No content.

Description

리프트-오프법을 이용한 투명도전막 패턴의 형성방법Method of forming a transparent conductive film pattern using the lift-off method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2a도 내지 제2d도는 본 발명에 따른 리프트-오프면을 이용한 투명도전막 패턴의 형성방법을 설명하기 위한 도면.2A to 2D are views for explaining a method of forming a transparent conductive film pattern using a lift-off surface according to the present invention.

Claims (1)

기판상에 포토 레지스트를 형성하는 제1공정과, 상기 제1공정에서 얻어진 샘플위에 투명도전막 패턴을 형성하기 위하여 포토 레지스터 패턴을 형성하는 제2공정과, 상기 제2공정에서 얻어진 샘플위에 투명도전막을 형성하는 제3공정과, 상기 제3공정에서 얻어진 샘플에서 불필요한 부분을 제거하여 최종적인 투명도전막 패턴을 형성하는 제4공정으로 이루어지는 것을 특징으로 하는 리프트-오프법을 이용한 투명도전막 패턴의 형성방법.A first step of forming a photoresist on a substrate, a second step of forming a photoresist pattern to form a transparent conductive film pattern on the sample obtained in the first step, and a transparent conductive film on the sample obtained in the second step And a fourth step of forming a final transparent conductive film pattern by removing an unnecessary portion from the sample obtained in the third step, and forming a final transparent conductive film pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890018413A 1989-12-12 1989-12-12 Method of forming a transparent conductive film pattern using the lift-off method KR910013473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890018413A KR910013473A (en) 1989-12-12 1989-12-12 Method of forming a transparent conductive film pattern using the lift-off method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018413A KR910013473A (en) 1989-12-12 1989-12-12 Method of forming a transparent conductive film pattern using the lift-off method

Publications (1)

Publication Number Publication Date
KR910013473A true KR910013473A (en) 1991-08-08

Family

ID=67662457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018413A KR910013473A (en) 1989-12-12 1989-12-12 Method of forming a transparent conductive film pattern using the lift-off method

Country Status (1)

Country Link
KR (1) KR910013473A (en)

Similar Documents

Publication Publication Date Title
KR920007105A (en) Etching Method of Al-based Material Film
KR840000387A (en) Method of manufacturing transfer paper and cosmetic material using the same
KR910013473A (en) Method of forming a transparent conductive film pattern using the lift-off method
KR937000886A (en) Formation method of fine resist pattern
KR910020802A (en) How to make a mask
KR910013463A (en) Opening Method of Semiconductor Device
KR910008792A (en) Manufacturing method of double sided semiconductor device
KR910013481A (en) Electric conductive film forming method
KR920022422A (en) Pattern Formation Method
KR920003448A (en) Method of forming a buried layer of a bipolar device
KR920001649A (en) How to remove polyetch surplus
KR920003433A (en) Etching method using RIE method
KR910020833A (en) Dry etching method by oxide mask
KR920001678A (en) Manufacturing method of aluminum oxide film formation of metal wiring
KR960002479A (en) Method of forming photosensitive pattern of semiconductor device
KR910013526A (en) How to Form Contact Holes for Wiring
KR890007605A (en) Manufacturing method of speaker grid
KR970022514A (en) Structure of PSM
KR920003407A (en) Reticle with Scum Prevention Line
KR910020493A (en) Double exposure method by double coating of resist
KR890005851A (en) Device Separation Method of Semiconductor Device
KR880009432A (en) Electrode Formation Method of Optical Device Array
KR860000139A (en) Manufacturing method of shrinkable PVC recycled film
KR970016801A (en) Photographing process to obtain good photoresist pattern
KR910014231A (en) Automatic return method of electronic typewriter

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
SUBM Submission of document of abandonment before or after decision of registration