KR910005430A - 반도체 소자의 금속 배선 공정방법 - Google Patents
반도체 소자의 금속 배선 공정방법 Download PDFInfo
- Publication number
- KR910005430A KR910005430A KR1019890012567A KR890012567A KR910005430A KR 910005430 A KR910005430 A KR 910005430A KR 1019890012567 A KR1019890012567 A KR 1019890012567A KR 890012567 A KR890012567 A KR 890012567A KR 910005430 A KR910005430 A KR 910005430A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- metal wiring
- process method
- wiring process
- spatter
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제4도는 본 발명의 공정도이다.
Claims (1)
- 콘택트 형성 후 스파터로 티타늄(10)을 증착시키고 레이저를 일정시간동안 아르곤 분위기에서 조사하여 Tisi2(20)을 형성하며 다시 질소 분위기에서 일정시간 조사하여 TiN(30)을 형성한 후 알루미늄-구리의 합금(40)을 증착시킴을 특징으로 하는 반도체 소자의 금속 배선 공정방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890012567A KR0132512B1 (ko) | 1989-08-31 | 1989-08-31 | 반도체소자의금속배선공정방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890012567A KR0132512B1 (ko) | 1989-08-31 | 1989-08-31 | 반도체소자의금속배선공정방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005430A true KR910005430A (ko) | 1991-03-30 |
KR0132512B1 KR0132512B1 (ko) | 1998-04-16 |
Family
ID=19289496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890012567A KR0132512B1 (ko) | 1989-08-31 | 1989-08-31 | 반도체소자의금속배선공정방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0132512B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100338102B1 (ko) * | 1999-06-25 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 배선 형성 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100477834B1 (ko) * | 1997-12-27 | 2005-07-04 | 주식회사 하이닉스반도체 | 티타늄실리사이드막형성방법 |
-
1989
- 1989-08-31 KR KR1019890012567A patent/KR0132512B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100338102B1 (ko) * | 1999-06-25 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 배선 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR0132512B1 (ko) | 1998-04-16 |
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