KR910004014A - Solid state imaging device - Google Patents

Solid state imaging device Download PDF

Info

Publication number
KR910004014A
KR910004014A KR1019900011309A KR900011309A KR910004014A KR 910004014 A KR910004014 A KR 910004014A KR 1019900011309 A KR1019900011309 A KR 1019900011309A KR 900011309 A KR900011309 A KR 900011309A KR 910004014 A KR910004014 A KR 910004014A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
imaging device
state imaging
solid state
well
Prior art date
Application number
KR1019900011309A
Other languages
Korean (ko)
Other versions
KR930003573B1 (en
Inventor
아츠시 혼조
노부오 스즈키
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910004014A publication Critical patent/KR910004014A/en
Application granted granted Critical
Publication of KR930003573B1 publication Critical patent/KR930003573B1/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음.No content.

Description

고체촬상장치Solid state imaging device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 제1실시예에 따른 고체촬상장치에 관한 검출회로와 설정회로의 단면도,1 is a cross-sectional view of a detection circuit and a setting circuit of the solid state imaging device according to the first embodiment of the present invention;

제2도는 본 발명의 제1실시예에 따른 고체촬상장치의 평면도,2 is a plan view of the solid state imaging device according to the first embodiment of the present invention;

제3도는 제1도에 도시된 검출회로와 설정회로의 특성을 나타낸 그래프.3 is a graph showing the characteristics of the detection circuit and the setting circuit shown in FIG.

Claims (1)

1도전형 반도체기판(24)상에 역도전형의 웰(23)을 형성하고, 이 웰(23)내에 복수의 감광소자(11)를 형성하며, 상기 웰(23)에 대해 상기 반도체기판(24)에 역바이어스전압(Vsub)을 인가해줌에 따라 상기 감광소자에 축적된 전하중 전위장벽치이하의 전위인 전하를 반도체기판(24)으로 배출하는 고체촬상장치에 있어서, 상기 반도체기판(24)의 저항치를 검출하는 검출수단(61)과, 이 검출수단(61)의 검출치에 기초해서 전위장벽치가 일정하게 되도록 상기 역바이어스전압을 설정하는 설정수단(62)이 상기 반도체기판(24)상에 설치된 것을 특징으로 하는 고체촬상장치.A reverse conductive well 23 is formed on a single conductive semiconductor substrate 24, and a plurality of photosensitive elements 11 are formed in the well 23, and the semiconductor substrate 24 is formed in relation to the well 23. In the solid state imaging device for discharging a charge which is a potential below the potential barrier value among the charges accumulated in the photosensitive element to the semiconductor substrate 24 by applying a reverse bias voltage Vsub to the semiconductor substrate 24. The detection means 61 for detecting the resistance value of and the setting means 62 for setting the reverse bias voltage so that the potential barrier value becomes constant based on the detection value of the detection means 61 are provided on the semiconductor substrate 24. Solid-state imaging device, characterized in that installed in. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900011309A 1989-07-28 1990-07-25 Image pick-up device KR930003573B1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP?1-195947 1989-07-28
JP1-195947 1989-07-28
JP19594789 1989-07-28
JP1290574A JPH0695737B2 (en) 1989-07-28 1989-11-08 Solid-state imaging device
JP1-290574 1989-11-08

Publications (2)

Publication Number Publication Date
KR910004014A true KR910004014A (en) 1991-02-28
KR930003573B1 KR930003573B1 (en) 1993-05-06

Family

ID=16349624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011309A KR930003573B1 (en) 1989-07-28 1990-07-25 Image pick-up device

Country Status (2)

Country Link
JP (1) JPH0695737B2 (en)
KR (1) KR930003573B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465874A (en) * 1990-07-06 1992-03-02 Fuji Photo Film Co Ltd Solid-state image sensing device
JP3197592B2 (en) * 1991-12-26 2001-08-13 三洋電機株式会社 Method for manufacturing semiconductor device
JP5522932B2 (en) * 2008-12-25 2014-06-18 キヤノン株式会社 Photoelectric conversion device and driving method of photoelectric conversion device

Also Published As

Publication number Publication date
JPH0695737B2 (en) 1994-11-24
JPH03128584A (en) 1991-05-31
KR930003573B1 (en) 1993-05-06

Similar Documents

Publication Publication Date Title
US3969634A (en) Bucket background subtraction circuit for charge-coupled devices
JPH084136B2 (en) Charge transfer device
KR880014678A (en) Solid state imaging device
KR930022571A (en) Charge Transfer Device and Solid State Imaging Device
KR970054308A (en) Solid-state image forming apparatus
KR910004014A (en) Solid state imaging device
RU2001107134A (en) SEMICONDUCTOR INTEGRAL DIAGRAM WITH PROTECTIVE SURFACE COVERING
US4654865A (en) CCD device with electrostatic protective means
JPH033391B2 (en)
KR930020967A (en) Solid state imaging device
KR920013732A (en) Output device of solid state image device
US3816769A (en) Method and circuit element for the selective charging of a semiconductor diffusion region
KR950013197A (en) Solid state image pickup device having a low resistance gate electrode and method of manufacturing the same
US5426318A (en) Horizontal charge coupled device having a multiple reset gate
EP0075924A3 (en) Solid state image pick-up device having a high resolution and a high sensitivity
ES2143862T3 (en) CIRCUIT PROVISION WITH A TEST CIRCUIT.
JP2963572B2 (en) Charge-coupled device
KR930009097A (en) MOS transistor and charge detector using the same
KR0172231B1 (en) Electrostatic protection circuit for semiconductor device
KR950008677B1 (en) Semiconductor signal charge detection device
KR900019247A (en) Camera including charge coupling device and image sensor device
US6417553B1 (en) Semiconductor wafer with sensors for detecting radiation on the semiconductor wafer
KR880008642A (en) Solid state imaging device
KR950010133A (en) Charge transfer device
KR870009588A (en) Charge transfer device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030430

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee