KR910003645Y1 - Fail safe driving circuit - Google Patents

Fail safe driving circuit Download PDF

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Publication number
KR910003645Y1
KR910003645Y1 KR2019860004886U KR860004886U KR910003645Y1 KR 910003645 Y1 KR910003645 Y1 KR 910003645Y1 KR 2019860004886 U KR2019860004886 U KR 2019860004886U KR 860004886 U KR860004886 U KR 860004886U KR 910003645 Y1 KR910003645 Y1 KR 910003645Y1
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South Korea
Prior art keywords
comparator
resistor
reference voltage
circuit
inverting terminal
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KR2019860004886U
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Korean (ko)
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KR870017497U (en
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황용기
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삼성전자 주식회사
한형수
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Priority to KR2019860004886U priority Critical patent/KR910003645Y1/en
Publication of KR870017497U publication Critical patent/KR870017497U/en
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Publication of KR910003645Y1 publication Critical patent/KR910003645Y1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
    • H04N3/20—Prevention of damage to cathode-ray tubes in the event of failure of scanning

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Dc-Dc Converters (AREA)

Abstract

내용 없음.No content.

Description

페일 세이프 구동회로Fail safe drive circuit

본 고안의 회로도.Circuit diagram of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

2 : 정류부 3 : 비교부2: rectifying part 3: comparing part

4 : 기준전압 설정부 5 : 집적소자 보호회로4: reference voltage setting unit 5: integrated device protection circuit

FBT : 플라이백 트랜스 CP1: 비교기FBT: Flyback Trans CP 1 : Comparator

R1∼R6: 저항 L1: 코일R 1 to R 6 : resistance L 1 : coil

VR1, VR2: 가변저항 C1, C2: 콘덴서VR 1 , VR 2 : Variable resistors C 1 , C 2 : Condenser

LED1: 발광다이오드 ZD1, ZD2: 제너다이오드LED 1 : Light emitting diode ZD 1 , ZD 2 : Zener diode

본 고안은 페일 세이프(FAIL-SAFE)집적 회로의 구동을 비교부에 의한 비교 전압으로 구동케 하여 확실한 구동을 할 수 있도록한 페일 세이프 구동 회로에 관한 것이다.The present invention relates to a fail-safe driving circuit that enables the driving of a fail-safe integrated circuit to be driven by a comparison voltage by a comparator, thereby enabling reliable driving.

일반적으로 과 전압이 걸렸을때 보호 회로가 동작하여 세트를 "오프"시킴으로써 X-레이의 과다 방출을 억제시키는 페일 세이프 회로에 있어서 과도 현상에 의한 오동작을 방지하기 어려운 난점이 있었다.In general, there is a difficulty in preventing a malfunction due to a transient phenomenon in a fail-safe circuit that suppresses excessive emission of an X-ray by operating a protection circuit when the overvoltage is applied, thereby "turning off" the set.

이는 기준 전압과 비교 전압의 비교를 트랜지스터의 구동에 의한 비교를 하므로써 좀 더 빠른 시간내에 비교전압을 비교할 수 없는 단점이 있었기 때문이다.This is because the comparison of the reference voltage and the comparison voltage by the driving of the transistor has a disadvantage in that the comparison voltage cannot be compared within a shorter time.

본 고안은 이와 같은 점을 감안하여 트랜지스터 대신 비교기를 사용하므로써 기준 전압과 비교 전압간의 비교를 확실하게 해 줄 수 있어 페일 세이프 회로를 정확하게 구동시킬 수 있도록한 페일 세이프 구동 회로로써 플라이백 트랜스의 출력 신호를 정류부를 통하여 비교부의 비교기로써 비교한 후 기준전압 설정부로 출력 기준전압을 설정하여 집적소자 보호 회로에 인가되게 한 것이다.In view of the above, the present invention is a fail-safe driving circuit that can accurately drive a fail-safe circuit by using a comparator instead of a transistor, so that the output signal of the flyback transformer can be accurately driven. Is compared to the comparator through the rectifier and then the output reference voltage is set to the reference voltage setting unit to be applied to the integrated device protection circuit.

이를 첨부 도면에 의하여 상세히 설명하면 다음과 같다.This will be described in detail with reference to the accompanying drawings.

플라이백 트랜스(FBT)로 부터 인가되는 출력 신호가 다이오드(D1)와 콘덴서(C1)로 구성된 정류부(2)를 통하여 반파 정류된후 저항(R1)을 거치고 제너다이오드(ZD1)와 기준전압 설정용 가변저항(VR1)을 통하여 비교기(CP1)의 반전단자(-)에 인가되게 구성하며 또한 비교기(CP1)의 비반전단자(+)에는 플라이백 트랜스(FBT)의 출력 신호가 저항(R1)(R2)을 거쳐 인가되도록 비교부(3)를 구성한다.The output signal applied from the flyback transformer (FBT) is half-wave rectified through the rectifier (2) consisting of a diode (D 1 ) and a capacitor (C 1 ), and then passes through a resistor (R 1 ) and a zener diode (ZD 1 ). It is configured to be applied to the inverting terminal (-) of the comparator CP 1 through the variable resistor VR 1 for setting the reference voltage, and the output of the flyback transformer (FBT) to the non-inverting terminal (+) of the comparator CP 1 . The comparator 3 is configured such that the signal is applied via the resistor R 1 (R 2 ).

그리고 비교기(CP1)의 출력이 저항(R4)을 거치고 출력 기준 전압 설정용 제너다이오드(ZD2) 및 가변저항(VR2)을 거친후 리플제거용 콘덴서(C2)를 거치도록 기준전압 설정부(4)를 구성한 후 저항(R5)을 거쳐 발광다이오드(LED1)를 점등시킴으로써 보호회로 동작중임을 나타내는 한편 노이즈 제거용 코일(L1)을 통하여 집적소자 보호회로(5)에 인가되게 구성한다.In addition, the output of the comparator CP 1 passes through the resistor R 4, passes through the zener diode ZD 2 and the variable resistor VR 2 for setting the output reference voltage, and then goes through the ripple removing capacitor C 2 . After the setting unit 4 is configured, the light emitting diode LED 1 is turned on through the resistor R 5 to indicate that the protection circuit is in operation, and applied to the integrated device protection circuit 5 through the noise removing coil L 1 . To be configured.

도면중 미설명 부호 X, Y는 보호회로 동작용 실험단자이다.In the drawings, reference numerals X and Y denote experimental terminals for protection circuit operation.

이와 같이 구성된 본 고안은 플라이백 트랜스(FBT)로 부터의 출력 신호가 다이오드(D1)와 콘덴서(C1)로 구성된 정류부(2)에서 반파 정류되고 리플 성분이 제거된 후 저항(R3)을 거치고 제너다이오드(ZD1)와 기준전압 설정용 가변저항(VR1)을 통하여 비교기(CP1)의 반전단자(-)에 인가되며 또한 보호회로 동작 시험용단자(X)(Y)가 연결된 저항(R1)(R2)을 거쳐 비교기(CP1)의 비반전 단자(+)에 인가된다.The present design constructed as after a half-wave rectification in the flyback transformer, the output signal from the (FBT) diode (D 1) and capacitor (C 1) rectifying (2) configured to be ripple component is removed, the resistance (R 3) The resistor is connected to the inverting terminal (-) of the comparator (CP 1 ) through the zener diode (ZD 1 ) and the variable resistor (VR 1 ) for setting the reference voltage, and is connected to the protective circuit operation test terminal (X) (Y). It is applied to the non-inverting terminal (+) of the comparator CP 1 via (R 1 ) (R 2 ).

이때에 기준 전압을 설정해주는 제어다이오드(ZD1)의 기준 전압은 가변저항(VR1)을 조정하므로써 자유롭게 조정할 수 있는 것이다.At this time, the reference voltage of the control diode ZD 1 which sets the reference voltage can be freely adjusted by adjusting the variable resistor VR 1 .

따라서 보호회로 동작 시험용 단자(X)(Y)를 쇼트(SHORT)시키면 과전류가 비교기(CP1)의 비반전단자(+)에 인가되어 반전단자(-)의 기준 전압보다 높아져 집적소자 보호회로(5)가 동작하게 된다.Therefore, when the protective circuit operation test terminal (X) (Y) is shorted, the overcurrent is applied to the non-inverting terminal (+) of the comparator (CP 1 ), which is higher than the reference voltage of the inverting terminal (-). 5) is activated.

이때 비교기(CP1)의 출력은 비 반전단자(+)의 입력전압이 반전단자(-)의 입력 전압보다 높으면 하이레벨전압이 출력되고 비반전단자(+)의 입력 전압이 반전단자(-)의 입력전압보다 낮으면 로우레벨 전압이 출력된다.The output of the comparator (CP 1) is a non-inverting terminal (+) of the input voltage to an inverting terminal (-) is higher than the input voltage of the high-level voltage is output, and the input voltage of the non-inverting terminal (+) is an inverting terminal (-) If the input voltage is lower than the low level voltage is output.

그러므로 보호회로 동작 시험용 단자(X)(Y)를 쇼트시키면 즉 플라이백 트랜스(FBT)로부터 과전압이 인가되면 비교기(CP1)의 출력은 하이레벨 전압이 출력되어 기준 전압 설정부(4)에 인가된다.Therefore, when the protective circuit operation test terminal (X) (Y) is shorted, that is, when overvoltage is applied from the flyback transformer (FBT), the output of the comparator CP 1 is outputted with a high level voltage and applied to the reference voltage setting section 4. do.

따라서 기준전압 설정부(4)에서는 비교기(CP1)의 출력이 저항(R4)을 거치고 제너다이오드(ZD2)와 기준전압 설정용 가변저항(VR2)을 거친후 콘덴서(C2)를 통하게 된다.Therefore, in the reference voltage setting unit 4, the output of the comparator CP 1 passes through the resistor R 4, passes through the zener diode ZD 2 and the variable resistor VR 2 for setting the reference voltage, and then the capacitor C 2 is turned on. It will work.

이때 하이레벨 전압의 기준 전압을 설정해주는 제너다이오드(ZD2)의 기준 전압은 가변저항(VR3)을 조정하므로써 자유롭게 조정할 수 있으며 콘덴서(C3)는 리플성분을 제거하도록 동작하게 된다.At this time, the reference voltage of the zener diode ZD 2 which sets the reference voltage of the high level voltage can be freely adjusted by adjusting the variable resistor VR 3 , and the capacitor C 3 operates to remove the ripple component.

따라서 기준전압 설정부(4)에서 설정된 하이레벨 전압은 저항(R2)을 거쳐 보호회로 동작 표시용 발광다이오드(LED1)를 점등시켜 보호회로가 동작중임을 나타낸줌과 동시에 노이즈 제거용 코일(L1)을 통하여 집적소자 보호회로(5)에 인가되어 페일 세이프 회로가 동작하게 된다.Therefore, the high level voltage set by the reference voltage setting unit 4 turns on the light emitting diode LED 1 for the protection circuit operation display via the resistor R 2 to indicate that the protection circuit is in operation, and at the same time, the noise removing coil ( L 1 ) is applied to the integrated device protection circuit 5 to operate the fail safe circuit.

이상에서와 같이 본 고안은 플라이백 트랜스(FBT)의 과전압을 정류부(2)로써 정류시키고 비교부(3)의 비교기(CP1)로 확실한 비교 전압을 설정한 후 기준전압 설정부(4)를 통하여 출력 기준 전압을 집적소자 보호회로(5)에 인가시킴으로써 페일 세이프 회로가 구동하도록 한 것으로 비교기(CP1)에 의하여 페일 세이프 회로를 확실히 구동시킬 수 있으며 또한 기준 전압을 자유롭게 설정할 수 있어 과도 현상에 의한 페일 세이프 회로의 오동작을 방지할 수 있는 효과가 있는 것이다.As described above, the present invention rectifies the overvoltage of the flyback transformer (FBT) with the rectifier 2, sets a certain comparison voltage with the comparator CP 1 of the comparator 3, and then sets the reference voltage setting unit 4. The fail-safe circuit is driven by applying the output reference voltage to the integrated device protection circuit 5, and the fail-safe circuit can be reliably driven by the comparator CP 1 , and the reference voltage can be freely set to prevent the transient phenomenon. This is to prevent the malfunction of the fail-safe circuit.

Claims (1)

플라이백 트랜스(FBT)에 다이오드(D1)와 콘덴서(C1)의 정류부(2)를 연결하여 비반전단자(+)에는 저항(R1)(R2)이 연결되고 반전단자(-)에는 저항(R3)과 제어다이오드(ZD1) 및 가변저항(VR1)이 연결된 비교기(CP1)로 구성된 비교부(3)를 동작시키도록 구성한 후 저항(R4)과 제어다이오드(ZD2) 및 가변저항(VR2)과 콘덴서(C2)로 구성된 기준전압 설정부(4)를 거치고 발광다이오드(LED1)와 코일(L1)을 통하여 집적소자 보호회로(5)에 인가되게 구성한 페일 세이프 구동회로.The diode (D 1 ) and the rectifier (C 1 ) of the capacitor (C 1 ) are connected to the flyback transformer (FBT) so that the resistor (R 1 ) (R 2 ) is connected to the non-inverting terminal (+) and the inverting terminal (-). The resistor R 3 and the control diode ZD 1 and the variable resistor VR 1 are configured to operate the comparator 3 including the comparator CP 1 connected thereto, and then the resistor R 4 and the control diode ZD. 2 ) and a reference voltage setting unit 4 composed of a variable resistor VR 2 and a capacitor C 2 and applied to the integrated device protection circuit 5 through the light emitting diode LED 1 and the coil L 1 . Configured fail-safe drive circuit.
KR2019860004886U 1986-04-12 1986-04-12 Fail safe driving circuit KR910003645Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019860004886U KR910003645Y1 (en) 1986-04-12 1986-04-12 Fail safe driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019860004886U KR910003645Y1 (en) 1986-04-12 1986-04-12 Fail safe driving circuit

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KR870017497U KR870017497U (en) 1987-11-30
KR910003645Y1 true KR910003645Y1 (en) 1991-05-31

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KR2019860004886U KR910003645Y1 (en) 1986-04-12 1986-04-12 Fail safe driving circuit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452861B1 (en) * 2002-05-30 2004-10-14 삼성전자주식회사 Display device capable of displaying in subscreen teletext of subchannel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452861B1 (en) * 2002-05-30 2004-10-14 삼성전자주식회사 Display device capable of displaying in subscreen teletext of subchannel

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Publication number Publication date
KR870017497U (en) 1987-11-30

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