KR910001466Y1 - High voltage stabilization circuit - Google Patents
High voltage stabilization circuit Download PDFInfo
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- KR910001466Y1 KR910001466Y1 KR2019850015697U KR850015697U KR910001466Y1 KR 910001466 Y1 KR910001466 Y1 KR 910001466Y1 KR 2019850015697 U KR2019850015697 U KR 2019850015697U KR 850015697 U KR850015697 U KR 850015697U KR 910001466 Y1 KR910001466 Y1 KR 910001466Y1
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- South Korea
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- transistor
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- high voltage
- terminal
- terminal point
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
- H04N3/18—Generation of supply voltages, in combination with electron beam deflecting
- H04N3/19—Arrangements or assemblies in supply circuits for the purpose of withstanding high voltages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Video Image Reproduction Devices For Color Tv Systems (AREA)
Abstract
내용 없음No content
Description
제1도는 본 고안의 블록도.1 is a block diagram of the present invention.
제2도는 본 고안의 회로도.2 is a circuit diagram of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
Q₁, Q2, Q3: 트랜지스터 R₁∼R₃: 저항Q₁, Q 2 , Q 3 : Transistors R ₁- R ₃ : Resistance
D1, D2, D3: 다이오드 T : 승압 트랜스D 1 , D 2 , D 3 : Diode T: Step-up transformer
C₁, C₂, C₃: 콘덴서 H : 수평 펄스 입력단자C ₁ , C ₂ , C ₃ : Condenser H: Horizontal pulse input terminal
HV : 고압 단자점 B+: 전원 단자점HV: High voltage terminal point B +: Power terminal point
A, B : 단자점A, B: terminal point
본 고안은 텔레비젼에서 고압으로 흐르는 비임(beam)전류에 의하여 비임전류가 많으면 고압이 낮아지고 비임전류가 작으면 고압이 상승하여 화면의 진폭이 변화하는 것을 방지하기 위하여 비임전류가 적게 흐를 때에는 고압을 낮게 하고 비임전류가 많이 흐를 때는 고압을 높게하여 고압변화로 인한 화면의 신폭변화를 없게하여 보다 선명한 해상도를 얻을 수 있게 한 것에 목적을 둔 텔레비젼 고압 안정화 회로에 관한 것이다.According to the present invention, when the beam current flows at a high pressure in a television, the high pressure drops when the beam current is high, and when the beam current is small, the high pressure increases to prevent the amplitude of the screen from changing. The present invention relates to a television high voltage stabilization circuit which aims to obtain a clearer resolution by reducing the width change of a screen caused by a high voltage change when the beam current is low and the beam current flows a lot.
종래의 텔레비젼에서는 고압으로 흐르는 비임전류가 크면 고압이 낮아지고 비임전류가 적으면 고압이 높아져고압 변동으로 인해서 화면의 진폭이 변화하여 시청자로 하여금 선명한 화면을 시청키 곤란할 뿐 아니라 눈의 피로를 가중시키는 원인이 되는 결점이 있었다.In conventional televisions, when the beam current flowing at a high pressure is large, the high pressure is low, and when the beam current is low, the high pressure is high, and the amplitude of the screen changes due to the fluctuation of the pressure, which makes it difficult for viewers to watch a clear screen and increases eye fatigue. There was a flawed cause.
본 고안은 상기와 같은 종래의 결점을 해결하기 위하여 트랜지스터를 이용하여 고압변화를 없게 하여 화면의진폭변화를 없게하여 보다 선명한 해상도로서 텔레비젼을 시청할 수 있게한 것으로 이를 첨부된 도면 제2도에 따라서 설명하면 다음과 같다.In order to solve the above-mentioned drawbacks, the present invention eliminates the high-voltage change by using a transistor so as not to change the amplitude of the screen, so that the television can be viewed at a higher resolution. Is as follows.
고압 단자점(HV)에서 다이오드(D3)를 통해 승압 트랜스(T)의 2차측애 연결하고 2차측 단자점(a)에 저항(R2)을 거쳐 트랜지스터(Q3)의 베이스측에 직결하고 이의 베이스측에 저항(R3)을 연결하여 접지시키며 트랜지스터(Q3, Q2)를 다아링톤 접속하여 승압 트랜스(T)의 1, 2차측애 저항(R1)을 연결하여서 전원단자(B+)에 연결하고 수평 펄스단자(H)에 트랜지스터(Q₁)의 베이스측에 연결하여 이의 트랜지스터(Q₁)의 콜렉터는 승압트랜스(T)의 1차측과 에미터는 접지점에 연결하였으며 트랜지스터(Q1)의 콜렉터에서 콘덴서(C1, C2)를 접지점과 단자점(B)에 각각 연결하여 단자점(B)과 접지점 사이에 다이오드(D₁)와 콘덴서(C₃)를 각각 접지시키고 단자점(B)에서 다이오드(D₂)를 통하여 트랜지스더(Q]의 콜렉터에 연결하여서 된 것이다.Connected to the secondary side of the boost transformer T at the high voltage terminal point HV through the diode D3 and directly connected to the base side of the transistor Q3 via a resistor R 2 at the secondary terminal point a. Connect resistor (R 3 ) to base to ground, connect Darlington transistor (Q3, Q2), connect resistor (R 1 ) of boost transformer (T) to power terminal (B +) and the collector of the horizontal pulse terminal transistor (Q₁) the transistor (Q₁) thereof connected to the base side of the (H) was connected to the primary side and the emitter of the ground point of the step-up transformer (T) capacitor from the collector of the transistor (Q 1) Connect (C 1 , C 2 ) to ground point and terminal point (B), respectively, and ground diode (D₁) and capacitor (C₃) between terminal point (B) and ground point, respectively, and connect diode (D₂) at terminal point (B). It is connected to the collector of the transistor (Q) through).
이와같은 본 고안을 제1도의 블럭도와 제2도의 회로도에 의하여 작용효과를 상세히 설명하면 다음과 같다. 음극선관(CRT)에 비임전류가 많이 흐를 경우 고압이 낮아 지는 데 트랜지스터(Q1)의 공진용량을 작게하면고압이 높아진다.The present invention is described in detail with the block diagram of FIG. 1 and the circuit diagram of FIG. 2 as follows. If a large amount of beam current flows through the cathode ray tube (CRT), the high voltage is lowered. If the resonance capacity of the transistor Q 1 is reduced, the high pressure is increased.
이러한 특성을 이용하여 비임전류는 단자점(B+)에서 저항(R1)을 통해 흐르므로서 비임전류가 적게 흐를때에는 단자점(A)의 전압은 B+전압의 전위로 상승하게 되어 상승된 전압은 저항(R2, R3)로 분압되어 트랜지스터(Q3)를 온 시키면 트랜지스터(Q3)의 콜렉터 전류는 트랜지스터(Q2)의 볘이스에 전류가 흐르게 되므로서 트랜지스터(Q2)를 온 시키므로서 트랜지스터(Q2)의 콜랙터 전류는 다이오드(D2)를 통하여 흐르게 되고 트랜지스터(Q1)출력부의 공진용량은콘뎬서(C₁, C₂, C3)의 용량에 따르나 콘덴서(C₂, C3)는 직렬로 연결되어 있으므로서 트랜지스터(Q2)가 온 될때 단자점(B)은 다이오드(D2)와 트랜지스터(Q2)의 콜랙터 에미터를 통해 도통되므로서 콘덴서(C3)의 용량은 영(zero)과 같은 특성을 보이게 되어 트랜지스터(Q1)의 공진용량은 콘댄서(C₁,C2)가 커지므로서 고압은 낮아지게 된다.Using this characteristic, the beam current flows from the terminal point B + through the resistor R 1 so that when the beam current flows less, the voltage at the terminal point A rises to the potential of the B + voltage. When the transistors Q 3 are turned on by dividing the resistors R 2 and R 3 , the collector current of the transistor Q 3 turns on the transistor Q 2 while the current flows through the transistor Q 2 . standing collector current of the transistor (Q2) includes a diode (D 2) flows through the transistor (Q 1) the resonance capacitor portion output ttareuna the capacity of the cone dyenseo (C₁, C₂, C 3) capacitors (C₂, C 3) Are connected in series and when the transistor Q 2 is turned on, the terminal point B is conducted through the collector emitter of the diode D 2 and the transistor Q2 so that the capacitance of the capacitor C 3 is zero. (zero) shows the same characteristics, the resonance capacity of the transistor (Q 1 ) is the condenser (C) 고압, C 2 ) is increased, the high pressure is lowered.
만약에 비임전류가 많이 흐를 때 저항(R1)단에 전압이 드롭(drop)이 많이 생기므로 단자점(A)의 전위는 낮아지게 되므로서 낮아진 전압은 저항(R₂, R3)을 통해 트랜지스터(Q3)의 바이어스 전압이 걸리게 되는데 고압이 일정전압 이상일 때 트랜지스터(Q3)가 동작하게 되이 저항(R₂, R3)을 연결하였으므로서 트랜지스터(Q3)가 동작하지 않게되어 트랜지스터(Q2)도 동작하지 못하므로서 트랜지스터(Q1)의 공진용량은 콘덴서(C₁, C₂, C3)에 의하여 이루어지고 공진용량이 작아지므로서 고압이 높아지게 된다.If the beam current flows a lot, a large voltage drop occurs in the resistor R 1 , so the potential of the terminal point A is lowered, and the lowered voltage is applied through the resistors R 2 and R 3 . The bias voltage of (Q 3 ) is applied. When the high voltage is higher than the predetermined voltage, the transistor (Q 3 ) is operated. Therefore, the transistor (Q 3 ) is not operated because the resistors (R 2 and R 3 ) are connected to the transistor (Q 2). ) Also does not operate, the resonant capacitance of the transistor (Q 1 ) is made by the capacitor (C₁, C₂, C 3 ), and the high resonant capacity is increased as the resonance capacity is reduced.
이와같이된 본 고안은 비임전류가 많을 때에는 고압이 낮아지는 고압을 높여주고 비임전류가 적을 때 고압이 높아지는 것은 고압을 낮혀 주므로서 고압 변동에 의한 텔레비젼 화면의 전폭변화를 없게하여주므로서 보다선명하고 깨끗한 화면을 사용할 수 있게한 매우 이상적인 회로이다.In this way, the present invention increases the high pressure that decreases the high pressure when the beam current is high, and increases the high pressure when the beam current is low, thereby lowering the high pressure, thereby making it possible to prevent the full width change of the TV screen due to the high voltage fluctuation. It is a very ideal circuit that makes the screen available.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019850015697U KR910001466Y1 (en) | 1985-11-27 | 1985-11-27 | High voltage stabilization circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019850015697U KR910001466Y1 (en) | 1985-11-27 | 1985-11-27 | High voltage stabilization circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870009097U KR870009097U (en) | 1987-06-15 |
| KR910001466Y1 true KR910001466Y1 (en) | 1991-03-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019850015697U KR910001466Y1 (en) | 1985-11-27 | 1985-11-27 | High voltage stabilization circuit |
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| Country | Link |
|---|---|
| KR (1) | KR910001466Y1 (en) |
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1985
- 1985-11-27 KR KR2019850015697U patent/KR910001466Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR870009097U (en) | 1987-06-15 |
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