KR910001078A - Composite materials having a separate solid dispersion in a solid metal-based material and a method of manufacturing the same - Google Patents

Composite materials having a separate solid dispersion in a solid metal-based material and a method of manufacturing the same Download PDF

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KR910001078A
KR910001078A KR1019890008413A KR890008413A KR910001078A KR 910001078 A KR910001078 A KR 910001078A KR 1019890008413 A KR1019890008413 A KR 1019890008413A KR 890008413 A KR890008413 A KR 890008413A KR 910001078 A KR910001078 A KR 910001078A
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dispersion
matrix
nitride
aluminum
silicon
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KR1019890008413A
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Korean (ko)
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에이 코니 제임즈
시이 플레밍즈 멀튼
아아르 고오서치 도늘드
클라이어 에릭
케이 냅 크리스토퍼
몰턴슨 앤드리어스
비다르 벨컨 슈르
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원본 미기재
노튼 캄파니
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1005—Pretreatment of the non-metallic additives
    • C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
    • C22C1/1021—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform the preform being ceramic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0057—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on B4C

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Glass Compositions (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Composites of materials in which the matrix material does not spontaneously or readily wet the disperse phase and in which the volume fraction of the disperse phase is less than that formed in a packed bed of dispersate particles can be made effectively by an indirect method of infiltrating a packed bed of dispersate particles, using pressure or other mechanical force as needed to overcome poor wetting and form an intermediate concentrated composite. The concentrated composite is then mixed with additional matrix-forming material to produce the finally desired composite. The technique is particularly valuable for composites with ceramic dispersates and metal or alloy matrixes. When the matrix is predominantly aluminum and the dispersates are predominantly silicon carbide, a barrier coating of a material that retards reaction between silicon carbide and alumina is useful.

Description

고형 금속계 물질내에 별개의 고형 분산체를 갖는 복합 재료 및 그의 제조방법Composite materials having a separate solid dispersion in a solid metal-based material and a method of manufacturing the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 실행에 유용한 장치 중 한가지 유형의 단면도이다.1 is a cross-sectional view of one type of device useful in the practice of the present invention.

제4도 및 제5도는 본 발명의 실행에 유용한 장치 중 다른 유형의 단면도이다.4 and 5 are cross-sectional views of other types of devices useful in the practice of the present invention.

Claims (23)

(a) 고형 매트릭스 부분의 전구체인 첫번째 다량의 유동 물질내에 분산체의 농축된 분산물을 형성시키고 : (b) 상기 농축된 분산물의 최소한의 부분을 최종 복합재료의 매트릭스 전구체인 두번째 다량의 유동 물질과 혼합시키고 : (c) 상기 농축된 분산물의 상기 최소한의 부분에 함유된 분산체를 결과 형성된 유동 물질에 분산시키고 : (d) 단계(c)로 부터의 상기 유동물질을 고형화시켜 최종 복합 재료를 형성시키는 것을 포함하는, 고형 매트릭스 물질내에 대다수의 별개의 고형 분산체를 갖는 복합재료를 제조하는 방법.(a) forming a concentrated dispersion of the dispersion in a first mass flow material that is a precursor of a solid matrix portion, and (b) at least a portion of the concentrated dispersion is a second mass flow material that is a matrix precursor of the final composite material. And (c) disperse the dispersion contained in the minimal portion of the concentrated dispersion in the resulting flow mass: (d) solidify the flow mass from step (c) to form a final composite material. A method of making a composite material having a plurality of discrete solid dispersions in a solid matrix material, comprising forming. 제1항에 있어서, 상기 대다수 분산체의 다공성 충전 층을 형성시키고 분산체의 상기 다공성 충전층을 상기 첫번째 다량의 용도 물질로 침투시키는 방법.The method of claim 1, wherein the porous packed layer of the majority of the dispersion is formed and the porous packed layer of the dispersion is penetrated into the first large amount of use material. 제2항에 있어서, 상기 다공성 충전 층을 상기 침투전에 제거시키는 방법.The method of claim 2 wherein said porous fill layer is removed prior to said penetration. 제1항에 있어서, 단계(b)를 수행하기 전에 상기 농축된 분산물 매트릭스의 최소한의 부분을 고형화시키는 것을 포함하는 방법.The method of claim 1 comprising solidifying at least a portion of the concentrated dispersion matrix before performing step (b). 제1항에 있어서, 상기 분산체가 주로 탄화규소, 질화규소, 질화알루미늄, 알루미나, 티타니아, 실리카, 탄화붕소, 붕화물, 탄화물, 규화물, 또는 다이아몬드를 포함하고, 상기 매트릭스 물질이 주로 알루미늄, 알루미늄, 합금, 청동, 구리, 구리합금, 마그네슘, 마그네슘합금, 티탄, 티탄합금, 아연 또는 아연 합금을 포함하는 방법.The method of claim 1, wherein the dispersion mainly comprises silicon carbide, silicon nitride, aluminum nitride, alumina, titania, silica, boron carbide, borides, carbides, silicides, or diamond, wherein the matrix material is mainly aluminum, aluminum, alloy A method comprising bronze, copper, copper alloy, magnesium, magnesium alloy, titanium, titanium alloy, zinc or zinc alloy. 제1항 내지 제5항중 어느 한항에 있어서, 상기 분산체가 주로 탄화규소, 탄화붕소, 질화규소, 또는 질화알루미늄을 포함하는 방법.The method of claim 1, wherein the dispersion comprises primarily silicon carbide, boron carbide, silicon nitride, or aluminum nitride. 제1항 내지 제6항중 어느 한 항에 있어서, 최종 복합 재료가 5-40v/o의 별개의 분산체 및 5%이하의 기공, 공극 및/또는 기체를 포함하는 방법.The process according to claim 1, wherein the final composite material comprises 5-40 v / o discrete dispersions and up to 5% of pores, voids and / or gases. 제1항에 있어서, 상기 분산체가, 농축된 분산물의 형성 온도 및 최종 복합재료의 형성온도에서, 분산체 물질과 상기 유동 물질 사이에 다른 방법으로 일어날 화학 반응을 지체시키는 차단 물질의 표면 층을 갖는 방법.The method of claim 1 wherein the dispersion has a surface layer of barrier material that retards a chemical reaction that will occur in a different way between the dispersion material and the flow material at the formation temperature of the concentrated dispersion and the formation temperature of the final composite material. Way. 제8항에 있어서, 상기 차단층이 주로 금속, 산화금속, 질화금속, 규화금속, 탄화금속, 또는 붕화금속을 포함하는 방법.The method of claim 8, wherein the barrier layer comprises predominantly metals, metal oxides, metal nitrides, metal silicides, metal carbides, or metal borides. 제8항에 있어서, 첫번째 다량의 유동 물질이, 유해한 화학 반응을 촉진시키지 않고 분산체의 습윤을 용이하게 하는 물질을 함유하는 방법.The method of claim 8, wherein the first large amount of flowing material contains a material that facilitates wetting of the dispersion without promoting harmful chemical reactions. 제8항 내지 제10항중 어느 한항에 있어서, 결과 형성된 유동 물질이 주로 알루미늄과 12%이하의 규소를 함유하는 방법.The process according to claim 8, wherein the resulting flowing material mainly contains aluminum and up to 12% silicon. 제8항 내지 제11항중 어느 한항에 있어서, 표면층이 2미크론 이하의 두께를 갖는 상기 차단물질이 구리, 몰리브덴, 니켈, 아연, 주석, 티탄, 실리카, 알루미나, 크로미아, 산화니켈, 산화구리, 멀라이트, 스피넬, 티타니아, 마그네슘 실리케이트, 리듐 실리케이트, 질화규소, 질화티탄, 질화붕소, 질화 알루미늄, 규화 몰리브덴, 규화구리, 또는 규화티탄인 방법.The barrier material according to any one of claims 8 to 11, wherein the barrier material having a thickness of 2 microns or less has copper, molybdenum, nickel, zinc, tin, titanium, silica, alumina, chromia, nickel oxide, copper oxide, Mullite, spinel, titania, magnesium silicate, lithium silicate, silicon nitride, titanium nitride, boron nitride, aluminum nitride, molybdenum silicide, copper silicide, or titanium silicide. 제8항 내지 제10항중 어느 한항에 있어서, 상기 차단 물질이 아산화규소를 포함하는 방법.The method of claim 8, wherein the blocking material comprises silicon nitrous oxide. 제1항 내지 제13항중 어느 한항에 있어서, 농축된 복합 재료의 최소한 한 부분과 두번째 다량의 유동 물질의 혼합공정을 최종 복합 재료 매트릭스의 융점 보다 높은 최소한 70℃에서 수행하는 방법.The process of claim 1, wherein the mixing of at least a portion of the concentrated composite material with the second mass of flowing material is performed at least 70 ° C. above the melting point of the final composite matrix. 제1항 내지 제14항중 어느 한항에 있어서, 농축된 분산물이 25 내지 85중량%의 분산체 및 75 내지 15중량%의 매트릭스 전구체를 포함하는 방법.The method of claim 1, wherein the concentrated dispersion comprises 25 to 85 weight percent dispersion and 75 to 15 weight percent matrix precursor. (A) 매트릭스 : (B) 5-40v/o의 별개의 분산체 : 및 (C) 5%이하의 기공, 공극, 및/또는 기체를 포함하는 복합 재료.(A) Matrix: (B) 5-40 v / o separate dispersion: and (C) 5% or less pores, voids, and / or gases. 제16항에 있어서, 매트릭스가 알루미늄, 알루미늄합금, 청동, 구리, 구리합금, 마그네슘, 마그네슘 합금, 티탄, 티탄합금, 아연 또는 아연 합금인 복합 재료.The composite material of claim 16, wherein the matrix is aluminum, aluminum alloy, bronze, copper, copper alloy, magnesium, magnesium alloy, titanium, titanium alloy, zinc or zinc alloy. 제16항에 있어서, 분산체가 탄화규소, 질화규소, 질화 알루미늄, 알루미나, 티타니아, 실리카, 탄화붕소, 붕화물, 탄화물, 규화물, 또는 다이아몬드를 포함하는 복합재료.The composite material of claim 16, wherein the dispersion comprises silicon carbide, silicon nitride, aluminum nitride, alumina, titania, silica, boron carbide, boride, carbide, silicide, or diamond. 제16항 내지 제18항중 어느 한 항에 있어서, 분산체가, 상기 매트릭스 물질과 분산체의 중심에 있는 물질 사이에 다른 방법으로 일어날 화학 반응을 지체시키는 차단 물질의 표면 층을 갖는 복합재료.19. The composite material of any one of claims 16-18, wherein the dispersion has a surface layer of blocking material that retards a chemical reaction that will occur in a different way between the matrix material and the material at the center of the dispersion. 제19항에 있어서, 상기 차단 층이 주로 금속, 산화금속, 질화금속, 규화금속, 탄화금속, 또는 붕화금속을 포함하는 복합재료.20. The composite material of claim 19, wherein the barrier layer comprises predominantly metals, metal oxides, metal nitrides, metal silicides, metal carbides, or metal borides. 제19항에 있어서, 표면층이 2미크론 이하의 두께를 갖는 상기 차단 물질이 구리, 몰리브덴, 니켈, 아연, 주석, 티탄, 실리카, 알루미나. 크로미아, 산회니켈, 산화구리, 멀라이트, 스피넬, 티타니아, 마그네슘, 실리케이트, 리튬 실리케이트, 질화규소, 질화티탄, 질화붕소, 질화 알루미늄, 규화물리브덴, 규화붕소, 규화구리, 또는 규화티탄인 복합재료.20. The barrier material of claim 19, wherein the barrier material having a thickness of 2 microns or less is copper, molybdenum, nickel, zinc, tin, titanium, silica, alumina. Composite materials that are chromia, acid ash nickel, copper oxide, mullite, spinel, titania, magnesium, silicate, lithium silicate, silicon nitride, titanium nitride, boron nitride, aluminum nitride, silicon nitride, boron silicide, copper silicide, or titanium silicide . 제19항에 있어서, 상기 분산체가 주로 탄화규소이고, 매트릭스가 12%이하의 규소를 함유하는 알루미늄을 주로 포함하는 복합재료.20. The composite material of claim 19, wherein the dispersion is predominantly silicon carbide and the matrix predominantly comprises aluminum containing less than 12% silicon. 제19항에 있어서, 분산체가 주로 탄화규소이고, 매트릭스가 8%이하의 규소를 함유하는 알루미늄을 주로 포함하고, 차단 물질이 이산화규소를 포함하는 복합재료.20. The composite material of claim 19, wherein the dispersion is predominantly silicon carbide, the matrix predominantly comprises aluminum containing up to 8% silicon, and the barrier material comprises silicon dioxide. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890008413A 1988-06-17 1989-06-16 Composite materials having a separate solid dispersion in a solid metal-based material and a method of manufacturing the same KR910001078A (en)

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US20808488A 1988-06-17 1988-06-17
US20808688A 1988-06-17 1988-06-17
US7/208,084 1988-06-17
US208,086 1988-06-17

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JPH05507320A (en) * 1990-05-09 1993-10-21 ランキサイド　テクノロジー　カンパニー，リミティド　パートナーシップ Filler for metal matrix composites
US5299724A (en) * 1990-07-13 1994-04-05 Alcan International Limited Apparatus and process for casting metal matrix composite materials
CA2086520C (en) * 1990-07-26 2000-06-27 Michael D. Skibo Cast composite materials
JP2734891B2 (en) * 1992-07-02 1998-04-02 トヨタ自動車株式会社 Method for producing metal carbide particle-dispersed metal matrix composite material
DE69301638T2 (en) * 1992-08-06 1996-07-25 Toyota Motor Co Ltd Process for the production of TiC whiskers and metal composite reinforced by TiC whiskers
US6635357B2 (en) * 2002-02-28 2003-10-21 Vladimir S. Moxson Bulletproof lightweight metal matrix macrocomposites with controlled structure and manufacture the same
CA2900728C (en) * 2013-02-11 2021-07-27 National Research Council Of Canada Metal matrix composite and method of forming

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EP0150519A1 (en) * 1984-01-30 1985-08-07 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO Method for producing an object of a composite material consisting of a body of a porous material and another material infiltrated into said body
IT1213484B (en) * 1986-08-19 1989-12-20 Samim Soc Azionaria Minero Met ZN-A1 COMPOSITE MATERIAL REINFORCED WITH SILICON CARBIDE POWDER.
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KR970074785A (en) * 1996-05-11 1997-12-10 페터스 우베, 슈베르트페거 한스-요아힘 Method for preparing vinylated organosilicon compound

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DK297289D0 (en) 1989-06-15
ATE113317T1 (en) 1994-11-15
NO174007C (en) 1994-03-02
EP0346771B1 (en) 1994-10-26
NO174007B (en) 1993-11-22
DK297289A (en) 1989-12-18
NO892404D0 (en) 1989-06-12
DE68918990D1 (en) 1994-12-01
AU3648789A (en) 1989-12-21
BR8902947A (en) 1990-02-06
DE68918990T2 (en) 1995-07-27
AU616275B2 (en) 1991-10-24
EP0346771A1 (en) 1989-12-20

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