KR900010920A - Dry Etching Device Using Electron Cyclotron Resonance Plasma - Google Patents

Dry Etching Device Using Electron Cyclotron Resonance Plasma Download PDF

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Publication number
KR900010920A
KR900010920A KR1019880017986A KR880017986A KR900010920A KR 900010920 A KR900010920 A KR 900010920A KR 1019880017986 A KR1019880017986 A KR 1019880017986A KR 880017986 A KR880017986 A KR 880017986A KR 900010920 A KR900010920 A KR 900010920A
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South Korea
Prior art keywords
gas
plasma
cyclotron resonance
dry etching
chamber
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KR1019880017986A
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Korean (ko)
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KR920006897B1 (en
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박성호
강봉구
이영수
김보우
김진섭
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경상현
재단법인 한국전자통신연구소
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Priority to KR1019880017986A priority Critical patent/KR920006897B1/en
Publication of KR900010920A publication Critical patent/KR900010920A/en
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Publication of KR920006897B1 publication Critical patent/KR920006897B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Particle Accelerators (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

전자 사이클로트론 공명(Electron Cyclotron Resonance)플라즈마를 이용한 건식 식각장치Dry Etching Device Using Electron Cyclotron Resonance Plasma

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 전자 사이클로트론 공명방식의 건식식각장치의 구성도, 제2도는 본 발명 마이크로파 발생 장치의 개략 구성도, 제3도는 본 발명 마이크로파의 반사 빛 이온의 가속을 위한 금속 그리드(Grid)의 사시도.1 is a schematic diagram of a dry etching apparatus of an electron cyclotron resonance method of the present invention, FIG. 2 is a schematic configuration diagram of a microwave generating apparatus of the present invention, and FIG. 3 is a metal grid for accelerating reflected light ions of the microwave of the present invention. Perspective view.

Claims (3)

가스방전이 일어나는 고진공의 원통형 플라즈마 방전실과, 이 플라즈마 방전실의 상측으로 플라즈마 2.47 GHz의 마이크로파를 유도 전달하는 도파관 및 마이크로 발생장치와, 플라즈마 방전실을 둘러싸면서 상부에서 도입되는 마이크로파와 함께 작용하여 전자 사이클로트론 공명 조건을 설정하여 반산자계를 형성시킬수 있는 솔레노이드 자기코일과, 상기한 플라즈마 방전실 하단에 설치되어 반도체 기판의 식각 반응이 일어나는 공정반응실을 구비한 것에 있어서, 상기 플라즈마 발생실의 일측으로 각종 반도체 재료를 식각하기 위하여 O2, SF6, CCl2F2C3F8, Cl2의 공정가스를 자동제어로 적정량 만큼 주입하는 가스공급계와, 공정반응실 아래에 대칭적인 진공배를 할 수 있도록 설치한 오일확산 펌프 및 로타리펌프의 이원적 구성으로 된 진공배기 시스템과, 공정반응실내의 정확한 식각종점검출을 위해 설치한 다원분광분석계와 공정중의 압력을 도입하는 가스량에 따라 자동 제어하도록 열전대 및 이온형의 이중 압력계측기의 폐쇄회로로로 이루어진 진공배기시스템을 포함하는 전자 사이클로트론 공명 플라즈마를 이용한 건식식각장치.It operates by working with a high vacuum cylindrical plasma discharge chamber in which gas discharge occurs, a waveguide and a microgenerator for inductively delivering a plasma of 2.47 GHz to the upper side of the plasma discharge chamber, and a microwave introduced from the upper portion surrounding the plasma discharge chamber. A solenoid magnetic coil capable of forming a semi-acid field by setting a cyclotron resonance condition, and a process reaction chamber installed at a lower end of the plasma discharge chamber and performing an etching reaction of a semiconductor substrate, wherein the plasma generation chamber is provided on one side of the plasma generation chamber. In order to etch semiconductor materials, a gas supply system that injects appropriate amounts of O 2 , SF 6 , CCl 2 F 2 C 3 F 8 and C l2 by automatic control, and a symmetrical vacuum system under the process reaction chamber Vacuum exhaust with dual configuration of oil diffusion pump and rotary pump System, a vacuum exhaust system consisting of a thermocouple and a closed circuit of an ion-type dual pressure gauge to automatically control the spectral spectrometer installed for accurate etch end point detection in the process reaction chamber and the amount of gas introduced in the process. Dry etching apparatus using an electron cyclotron resonance plasma comprising. 제1항에 있어서, 가스공급계는 다섯가지의 공정 가스용 가스실린더완 각각의 가스 압력 조절기, 수동식 가스차단밸브, 가스유량조절기와 통합가스 공급관에 설치된 공압식 가스차단밸브로 구성된 전자사이클로트론 공명 플라즈마를 이용한 건식식각장치.The gas supply system of claim 1, wherein the gas supply system comprises an electron cyclotron resonance plasma including a gas pressure regulator, a manual gas shutoff valve, a gas flow regulator, and a pneumatic gas shutoff valve installed in an integrated gas supply pipe. Dry etching device used. 제1항에 있어서, 진공배기시스템은 공정 반응선에 반응가스가 유입되지 않았을때 최저 10-6Torr 까지 내려갈수 있게 하고 배기되는 반응가스와의 화학반응을 극소화 하기 위해 오일확산 펌프 및 로타리 펌프는 펌블린 오일을 사용하는 전자사이클트론 공명 플라즈마를 이용한 건식식각장치.2. The oil diffusion pump and rotary pump of claim 1, wherein the vacuum exhaust system is configured to allow the reactor to descend to 10-6 Torr when no reaction gas is introduced into the process line and to minimize chemical reactions with the exhaust gas. Dry etching apparatus using electron cyclotron resonance plasma using fumblin oil. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880017986A 1988-12-30 1988-12-30 Dry etching apparatus using electron cyclotron resonance KR920006897B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880017986A KR920006897B1 (en) 1988-12-30 1988-12-30 Dry etching apparatus using electron cyclotron resonance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880017986A KR920006897B1 (en) 1988-12-30 1988-12-30 Dry etching apparatus using electron cyclotron resonance

Publications (2)

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KR900010920A true KR900010920A (en) 1990-07-11
KR920006897B1 KR920006897B1 (en) 1992-08-21

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KR920006897B1 (en) 1992-08-21

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