KR900010914A - Gas supply system for photochemical deposition device for forming silicon based thin film - Google Patents

Gas supply system for photochemical deposition device for forming silicon based thin film Download PDF

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Publication number
KR900010914A
KR900010914A KR1019880017969A KR880017969A KR900010914A KR 900010914 A KR900010914 A KR 900010914A KR 1019880017969 A KR1019880017969 A KR 1019880017969A KR 880017969 A KR880017969 A KR 880017969A KR 900010914 A KR900010914 A KR 900010914A
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KR
South Korea
Prior art keywords
line
nitrogen
thin film
valve
supply system
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Application number
KR1019880017969A
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Korean (ko)
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KR920004963B1 (en
Inventor
전치훈
김윤태
박성호
강봉구
김상호
Original Assignee
경상현
재단법인 한국전자통신연구소
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Priority to KR1019880017969A priority Critical patent/KR920004963B1/en
Publication of KR900010914A publication Critical patent/KR900010914A/en
Application granted granted Critical
Publication of KR920004963B1 publication Critical patent/KR920004963B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음No content

Description

실리콘계 절연박막 형성을 위한 광화학증착 장치용 가스 공급계Gas supply system for photochemical deposition device for forming silicon based thin film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 의한 실리콘계 절연박막 형성을 위한 가스 공급계를 나타내는 관계통도, 제2도는 본 발명의 유독가스라인의 관계통도, 제3도는 전원차단장치의 가스공급계 상태를 나타내는 관계통도.1 is a relationship diagram showing a gas supply system for forming a silicon-based insulating thin film according to the present invention, FIG. 2 is a relationship diagram of a toxic gas line of the present invention, and FIG. 3 is a relationship diagram showing a gas supply system state of a power cutoff device.

Claims (3)

질소, 암모니아, 산화질소, 실란라인의 주관(1)에 접속되어 공압밸브(5)를 거치고, 알곤, 산화라인은 질량유량조절기(6) 공압밸브(7)(8)를 통하고 주관(2)(3)을 거쳐 벨로우즈(23)에 접속된 반응기로 연결되도록 되어 있고, 상기 가스들과 공기라인에는 수동밸브(9), 벌크헤드유니온(10)을 설치하고, 상기 질소, 암모니아, 산화질소, 실란라인에는 역지밸브(11) 및 공압밸브(12)를 설치하여 질량유량조절기(6) 전단에 접속하되, 상기 질소 및 공기라인에는 압력스위치(21)를 설치하고, 또 상기 공기라인상에는 솔레노이드밸브(22)를 설치하여 상기 각각의 공압 밸브를 제어할수 있도록 구성되어, 박막을 정확하고 안전하게 증착할수 있는 실리콘계 절연박막 형성을 위한 광화학증착장치용 가스 공급계.It is connected to the main pipe (1) of nitrogen, ammonia, nitrogen oxide and silane line and passes through the pneumatic valve (5). The argon and oxidation line is passed through the mass flow regulator (6) and pneumatic valves (7) and (8). (3) is connected to the bellows (23) connected to the reactor, the gas and the air line is provided with a manual valve (9), bulkhead union (10), the nitrogen, ammonia, nitrogen oxides In addition, a check valve 11 and a pneumatic valve 12 are installed in the silane line and connected to the front end of the mass flow regulator 6, and a pressure switch 21 is installed in the nitrogen and air lines, and a solenoid on the air line. A gas supply system for a photochemical deposition apparatus for forming a silicon-based insulating thin film configured to control the respective pneumatic valves by installing a valve 22 to accurately and safely deposit a thin film. 제1항에 있어서, 상기 암모니아, 산화질소, 실란라인 상에 질소 유압라인(13), 역지밸브(14), 수동 밸브(15)(17) 바이패스라인(16)을 설치하여 질량유량조절기(6)의 유지, 보수를 간편히 할수 있도록 하고 안전 대책을 구비한 것을 특징으로 하는 실리콘계 절연박막 형성을 위한 광화학증착장치용 가스 공급계.The method of claim 1, wherein the nitrogen flow line 13, the check valve 14, the manual valve 15, the bypass line 16 is installed on the ammonia, nitrogen oxide, silane line by the mass flow regulator ( 6) Gas supply system for the photochemical deposition apparatus for forming a silicon-based insulating thin film, characterized in that to simplify the maintenance and repair, and provided with safety measures. 제1항에 있어서, 질소라인의 분자관(4)에 평상시 열린 상태의 공압밸브(18), 수동밸브(19), 그리고 주관(1)(2)(3)부위에 공압밸브(5)(7)(8)를 설치하여 전원차단시 반응기가 자동으로 세척되고 잔류가스가 반응기가 격리되도록 한 것을 특징으로 하는 실리콘계 절연박막 현성을 위한 광화학증착장치용 가스공급계.The pneumatic valve (5) according to claim 1, wherein the pneumatic valve (18), the manual valve (19), and the main pipes (1) (2) and (3) are normally opened in the molecular pipe (4) of the nitrogen line. 7) (8) to install a gas supply system for photochemical deposition device for the silicon-based insulation thin film, characterized in that the reactor is automatically washed when the power is cut off and the residual gas is isolated from the reactor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880017969A 1988-12-30 1988-12-30 Gas supply system of photo-chemical deposition apparatus KR920004963B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880017969A KR920004963B1 (en) 1988-12-30 1988-12-30 Gas supply system of photo-chemical deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880017969A KR920004963B1 (en) 1988-12-30 1988-12-30 Gas supply system of photo-chemical deposition apparatus

Publications (2)

Publication Number Publication Date
KR900010914A true KR900010914A (en) 1990-07-11
KR920004963B1 KR920004963B1 (en) 1992-06-22

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ID=19280966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880017969A KR920004963B1 (en) 1988-12-30 1988-12-30 Gas supply system of photo-chemical deposition apparatus

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KR (1) KR920004963B1 (en)

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Publication number Publication date
KR920004963B1 (en) 1992-06-22

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