KR900010526A - Diagnosis circuit for the unit to prevent current consumption and excessive heat dissipation of semiconductor power devices - Google Patents

Diagnosis circuit for the unit to prevent current consumption and excessive heat dissipation of semiconductor power devices Download PDF

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Publication number
KR900010526A
KR900010526A KR1019890018426A KR890018426A KR900010526A KR 900010526 A KR900010526 A KR 900010526A KR 1019890018426 A KR1019890018426 A KR 1019890018426A KR 890018426 A KR890018426 A KR 890018426A KR 900010526 A KR900010526 A KR 900010526A
Authority
KR
South Korea
Prior art keywords
voltage
comparator
reference voltage
diagnostic circuit
diagnostic
Prior art date
Application number
KR1019890018426A
Other languages
Korean (ko)
Inventor
팔라라 세르지오
Original Assignee
산토 푸졸로, 귀세페 페르라
에세지에세-톰슨 미크로엘렉트로닉스 에세. 에르. 엘.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산토 푸졸로, 귀세페 페르라, 에세지에세-톰슨 미크로엘렉트로닉스 에세. 에르. 엘. filed Critical 산토 푸졸로, 귀세페 페르라
Publication of KR900010526A publication Critical patent/KR900010526A/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P17/00—Testing of ignition installations, e.g. in combination with adjusting; Testing of ignition timing in compression-ignition engines
    • F02P17/12—Testing characteristics of the spark, ignition voltage or current
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
    • F02P3/0552—Opening or closing the primary coil circuit with semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Abstract

내용 없음No content

Description

반도체 전력 장치의 전류 제어 및 과잉열소모를 방지하는 유니트용 진단회로Diagnosis circuit for the unit to prevent current consumption and excessive heat dissipation of semiconductor power devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 진단회로를 포함하는 전자 점화용 반도체 전력장치의 블럭도, 제2도는 집적된 형태로 설비에 적합한 상기 진단회로의 한 실시예의 회로도, 제3도는 제2도의 진단 회로의 동작 방식을 도시한 일련의 도면.1 is a block diagram of an electronic ignition semiconductor power device including a diagnostic circuit according to the present invention, FIG. 2 is a circuit diagram of one embodiment of the diagnostic circuit suitable for installation in an integrated form, and FIG. 3 is a circuit diagram of the diagnostic circuit of FIG. A series of drawings illustrating the manner of operation.

Claims (9)

반도체 전력 장치의 전류 제어 및 과잉 열 소모를 방지하는 유니트용 진단회로에 있어서, 디바이스를 통과하는 전류에 비례하는 전압을 제공하도록 전력 장치(5)에 접속된 제1 입력(12) 및 기준 전압 발생기(15)에 접속된 제2 입력(14)를 갖고 있는 비교기(11), 비교기(11)로부터의 출력이 상기 기준 전압 이상의 전압에 비례하여 상기 전압의 증가를 나타낼때마다, 진단신호를 발생시키도록 상기 비교기(11)의 출력에 접속된 신호 발생기(17), 및 프리셋 한계 이상의 온도의 증가에 응답하여 상기 기준 전압을 감소시키도록 상기 기준 전압 발생기(15)에 작용하는 전압 장치(5)의 온도에 민감한 장치(16)로 구성되는 것을 특징으로 하는 진단회로.1. A diagnostic circuit for a unit that prevents excessive heat consumption and current control of a semiconductor power device, comprising: a first input 12 and a reference voltage generator connected to the power device 5 to provide a voltage proportional to the current passing through the device Whenever the output from the comparator 11 and the comparator 11 having the second input 14 connected to (15) indicates an increase in the voltage in proportion to the voltage above the reference voltage, a diagnostic signal is generated. The signal generator 17 connected to the output of the comparator 11 and the voltage device 5 acting on the reference voltage generator 15 to reduce the reference voltage in response to an increase in temperature above a preset limit. Diagnostic circuit, characterized in that consisting of a temperature sensitive device (16). 제1항에 있어서, 전류에 비례하는 상기 전압이 전력장치(5)와 직렬로 접속된 저항(6) 양단간에서 취해진 것을 특징으로 하는 진단회로.The diagnostic circuit according to claim 1, characterized in that the voltage proportional to the current is taken between the resistors (6) connected in series with the power device (5). 제2항에 있어서, 상기 비교기(11), 상기 기준 전압발생기(15), 상기 신호발생기(17), 온도에 민감한 상기장치(16), 상기 전력장치(5) 및 상기 저항(6)이 단일 직접 회로에 포함하는 것을 특징으로 하는 진단회로.3. The comparator (11), the reference voltage generator (15), the signal generator (17), the temperature sensitive device (16), the power device (5) and the resistor (6) are single. Diagnostic circuits, characterized in that included in the integrated circuit. 제1항에 있어서, 상기 비교기(11)이 히스테리시스 형태로 된 것을 특징으로 하는 진단회로.The diagnostic circuit according to claim 1, wherein the comparator is in the form of hysteresis. 제1항에 있어서 온도에 민감한 상기 장치(16)이 온도의 프리셋 범위내에 연속적으로 상기 기준 전압을 감소시키도록 상기 기준 전압 발생기(15)에 작용하는 것을 특징으로 하는 진단회로.2. The diagnostic circuit according to claim 1, wherein the temperature sensitive device (16) acts on the reference voltage generator (15) to continuously reduce the reference voltage within a preset range of temperature. 제1항에 있어서, 상기 비교기(11)이 전류 미러 회로(20,23,24)를 통과하는 일정한 전류에 의해 제공된 공통 베이스를 갖고 있는 2개의 트랜지스터(18,19)에 의해 형성된 미분 단, 상기 전력장치(5)에 병렬로 접속된 저항(6)을 통과하여 성극된 상기 트랜지스터(18,29)중 한 트랜지스터(18), 및 상기 기준 전압을 정하는 다른 저항(22)를 통과하여 성극된 상기 트랜지스터의 다른 트랜지스터(19)로 구성되는 것을 특징으로 하는 진단회로.The derivative stage according to claim 1, wherein the comparator (11) is formed by two transistors (18, 19) having a common base provided by a constant current through the current mirror circuits (20, 23, 24). One of the transistors 18 and 29 polarized through a resistor 6 connected in parallel to the power device 5, and the polarized through the other resistor 22 defining the reference voltage. A diagnostic circuit characterized by comprising another transistor (19) of the transistors. 제6항에 있어서, 상기 비교기(11)이 비례하는 상기 전압의 증가에 대응하는 상태에 상기 미분단(18,19)의 전환에 응답하는 회로 장치(26)이 미분 단의 상기 트랜지스터의 공급 전류의 증가를 결정하므로, 상기 비교기(11)의 역 전환은 상기 비례 전압 이하의 전압에서 발생되는 것을 특징으로 하는 진단 회로.7. The supply current of the transistor of the derivative stage according to claim 6, wherein the circuit device 26 which responds to the switching of the derivative stages 18 and 19 in a state in which the comparator 11 corresponds to an increase in the proportional voltage. Diagnostic circuit, characterized in that the inversion of the comparator (11) occurs at a voltage below the proportional voltage. 제6항에 있어서, 온도에 민감한 상기장치(16)이 온도가 상기 분압기(32,33)에 의해 정해진 프리셋한계 이상일때 도통 상태로 전환하도록 사용된 트랜지스터를 성극(polarization)하기 위해 사용된 분압기(32,33), 비교기(11)의 미분단(18,19)의 트랜지스터를 제공하는 상기 일정한 전류를 감소시키도록 상기 미러 전류회로(20,23,24)에 작용하므로 상기 기준 전압을 변화시키는 상기 트랜지스터(38)로 구성되는 것을 특징으로 하는 진단 회로.7. The voltage divider of claim 6, wherein the temperature sensitive device (16) is used to polarize a transistor used to transition to a conduction state when the temperature is above a preset limit set by the voltage dividers (32, 33). 32,33, which acts on the mirror current circuits 20, 23, 24 to reduce the constant current providing the transistors of the differential stages 18, 19 of the comparator 11, thus changing the reference voltage. A diagnostic circuit comprising a transistor (38). 제6항에 있어서, 상기 진단 신호 발생기(17)이 개방콜렉터 트랜지스터(30)에 의해 구성되는 것을 특징으로 하는 진단 회로.7. The diagnostic circuit according to claim 6, wherein the diagnostic signal generator (17) is constituted by an open collector transistor (30). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890018426A 1988-12-13 1989-12-12 Diagnosis circuit for the unit to prevent current consumption and excessive heat dissipation of semiconductor power devices KR900010526A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT8822924A IT1227586B (en) 1988-12-13 1988-12-13 DIAGNOSTIC CIRCUIT FOR CURRENT CONTROL UNIT AND PROTECTION AGAINST EXCESSIVE THERMAL DISSIPATION FOR SEMICONDUCTOR POWER DEVICE
IT22924A/88 1988-12-13

Publications (1)

Publication Number Publication Date
KR900010526A true KR900010526A (en) 1990-07-07

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ID=11201951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018426A KR900010526A (en) 1988-12-13 1989-12-12 Diagnosis circuit for the unit to prevent current consumption and excessive heat dissipation of semiconductor power devices

Country Status (7)

Country Link
US (1) US5008771A (en)
EP (1) EP0373694B1 (en)
JP (1) JPH02223672A (en)
KR (1) KR900010526A (en)
CA (1) CA2005184A1 (en)
DE (1) DE68913677T2 (en)
IT (1) IT1227586B (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426391A (en) * 1990-05-18 1992-01-29 Zexel Corp Controller of brushless motor
US5249141A (en) * 1990-10-24 1993-09-28 Astec America, Inc. Method and apparatus for maintaining an active device below a maximum safe operating temperature
JPH04285465A (en) * 1991-03-13 1992-10-09 Nec Corp Switching power source with protective circuit
US5189314A (en) * 1991-09-04 1993-02-23 International Business Machines Corporation Variable chip-clocking mechanism
DE59304461D1 (en) * 1992-07-16 1996-12-19 Bosch Gmbh Robert Overload protection circuit
US5463521A (en) * 1992-11-06 1995-10-31 Caterpillar Inc. Power supply protection circuit
US7216064B1 (en) * 1993-09-21 2007-05-08 Intel Corporation Method and apparatus for programmable thermal sensor for an integrated circuit
EP0672827A1 (en) * 1994-03-18 1995-09-20 Siemens Aktiengesellschaft Method and device for monitoring the ignition system of a combustion engine
US5602505A (en) * 1994-10-28 1997-02-11 Caterpillar Inc. Gate drive circuit
JP3216972B2 (en) * 1995-08-04 2001-10-09 株式会社日立製作所 Ignition device for internal combustion engine
US5828261A (en) * 1996-11-13 1998-10-27 Caterpillar Inc. Gate drive circuit that controls a power transistor in three states
US6055489A (en) * 1997-04-15 2000-04-25 Intel Corporation Temperature measurement and compensation scheme
DE19742930C1 (en) * 1997-09-29 1998-11-19 Siemens Ag Power switch with overload protection
US6055149A (en) * 1998-12-02 2000-04-25 Intersil Corporation Current limited, thermally protected, power device
US6363490B1 (en) 1999-03-30 2002-03-26 Intel Corporation Method and apparatus for monitoring the temperature of a processor
US6393374B1 (en) 1999-03-30 2002-05-21 Intel Corporation Programmable thermal management of an integrated circuit die
US6789037B2 (en) * 1999-03-30 2004-09-07 Intel Corporation Methods and apparatus for thermal management of an integrated circuit die
DE10012956A1 (en) 2000-03-16 2001-09-20 Bosch Gmbh Robert Engine ignition energy regulation device calculates additional energy loss of ignition end stage and/or effective energy reduction for selective disconnection of ignition end stage
US7263567B1 (en) 2000-09-25 2007-08-28 Intel Corporation Method and apparatus for lowering the die temperature of a microprocessor and maintaining the temperature below the die burn out
JP3688619B2 (en) * 2001-10-05 2005-08-31 株式会社東芝 Semiconductor integrated circuit
DE10202289A1 (en) 2002-01-22 2003-07-31 Siemens Ag driver circuit
DE10245484B4 (en) 2002-09-30 2004-07-22 Infineon Technologies Ag Method for controlling a semiconductor switch and circuit arrangement with a semiconductor switch
US6651637B1 (en) 2002-10-29 2003-11-25 Transpo Electronics, Inc. Vehicle ignition system using ignition module with reduced heat generation
DE10332513A1 (en) * 2003-07-17 2005-02-03 Robert Bosch Gmbh Semiconductor component with integrated overtemperature protection
JP4215025B2 (en) * 2005-04-25 2009-01-28 株式会社デンソー Vehicle power generation control device
DE602006002238D1 (en) * 2006-01-24 2008-09-25 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Protective device for electronic converters, related transducers and methods
JP2009055754A (en) * 2007-08-29 2009-03-12 Yazaki Corp Protection circuit
WO2011090486A1 (en) * 2010-01-22 2011-07-28 Hewlett-Packard Development Company, L.P. I/o control systems and methods
JP5645782B2 (en) 2011-09-14 2014-12-24 三菱電機株式会社 Power module
FR2985115B1 (en) * 2011-12-21 2014-03-07 Continental Automotive France CONTROL OF AN INDUCTIVE LOAD WITH TEMPERATURE-SENSITIVE CURRENT REDUCTION MECHANISM
JP6013059B2 (en) * 2012-07-20 2016-10-25 ローム株式会社 Switch control circuit, igniter, engine ignition device, vehicle

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329920A1 (en) * 1973-06-12 1975-01-09 Bbc Brown Boveri & Cie IGNITION SYSTEM FOR COMBUSTION MACHINERY
US4100907A (en) * 1976-07-02 1978-07-18 Motorola, Inc. Start-to-run circuit for an electronic ignition system
US4698655A (en) * 1983-09-23 1987-10-06 Motorola, Inc. Overvoltage and overtemperature protection circuit
US4703390A (en) * 1986-05-27 1987-10-27 Motorola, Inc. Integrated circuit power timer
JPS63239367A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Ignition device for internal combustion engine

Also Published As

Publication number Publication date
DE68913677D1 (en) 1994-04-14
IT1227586B (en) 1991-04-22
DE68913677T2 (en) 1994-09-08
IT8822924A0 (en) 1988-12-13
CA2005184A1 (en) 1990-06-13
EP0373694A1 (en) 1990-06-20
US5008771A (en) 1991-04-16
EP0373694B1 (en) 1994-03-09
JPH02223672A (en) 1990-09-06

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