KR900009575Y1 - High voltage control circuit - Google Patents
High voltage control circuit Download PDFInfo
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- KR900009575Y1 KR900009575Y1 KR2019860011198U KR860011198U KR900009575Y1 KR 900009575 Y1 KR900009575 Y1 KR 900009575Y1 KR 2019860011198 U KR2019860011198 U KR 2019860011198U KR 860011198 U KR860011198 U KR 860011198U KR 900009575 Y1 KR900009575 Y1 KR 900009575Y1
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- 238000001514 detection method Methods 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000004804 winding Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
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- 230000001360 synchronised effect Effects 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
- H04N3/18—Generation of supply voltages, in combination with electron beam deflecting
- H04N3/19—Arrangements or assemblies in supply circuits for the purpose of withstanding high voltages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F38/00—Adaptations of transformers or inductances for specific applications or functions
- H01F38/42—Flyback transformers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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Abstract
내용 없음.No content.
Description
제 1 도는 종래의 고전압 제어회로의 블록 다이어그램.1 is a block diagram of a conventional high voltage control circuit.
제 2 도는 본 고안에 따른 고전압 제어회로의 블록 다이어그램.2 is a block diagram of a high voltage control circuit according to the present invention.
제 3 도는 제 2 도에 따른 고전압 제어회로의 상세 회로구성도.3 is a detailed circuit diagram of the high voltage control circuit according to FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1,15 : 120(V)입력단 2,17 : 수평동기신호입력단1,15: 120 (V) input terminal 2,17: Horizontal synchronous signal input terminal
3,19 : 고압제어부 4,20 : 수평발진부3,19: high pressure controller 4,20: horizontal oscillator
5,21 : 수평드라이브 6,22 : 고압출력부5,21: Horizontal drive 6,22: High voltage output unit
7,23 : 고압변동검출부 9,24 : 플라이백트랜스7,23: high pressure fluctuation detection unit 9,24: flyback transformer
10,26 : 고압출력단 14,85(V) : 입력단10,26: high voltage output 14,85 (V): input
16 : 모드절환신호 입력단 D1∼D3 : 다이오드16: mode switching signal input terminal D1 to D3: diode
ZD1 : 제너다이오우드 VR1∼VR4 : 가변저항ZD1: Zener diode VR1 to VR4: Variable resistor
R1∼R11 : 저항 IC1 : 비교기R1 to R11: Resistor IC1: Comparator
C1 : 콘덴서 Q1∼Q4 : 트랜지스터C1: capacitor Q1 to Q4: transistor
본 고안은 TV 또는 모니터에서 수평 주파수가 이중으로 입력될 때 발생되는 고전압을 제어하는 회로에 관한 것으로 특히 전압 제어회로에서 고전압 제어용 트랜지스터의 자체 손실을 줄임으로서 발생된 열을 감소시켜 제품의 화제 위험성을 방지하고, 회로의 안정성을 향상시키는데 적당하도록 한 고전압 제어회로에 관한 것이다.The present invention relates to a circuit for controlling a high voltage generated when a horizontal frequency is dual input from a TV or a monitor. In particular, the voltage control circuit reduces the heat generated by reducing the self-loss of the high voltage control transistor. The present invention relates to a high voltage control circuit suitable for preventing and improving the stability of a circuit.
종래의 고전압 제어회로의 구성을 제 1 도에 도시한 블록다이어그램으로 설명하면, 120(V)입력단 (1)은 고압제어부(3)와 연결되고, 고압제어부(3)는 플라이백트랜스(9)의 1차측 일단에 연결되고, 수평동기 신호 입력단(2)은 수평발진부(4)와 수평드라이브(5) 및 고압 출력부(6)를 순차 거쳐 플라이백트랜스(9)의 1차측 타단에 접속되고, 플라이백트랜스(9)의 2차측 일단은 다이오드(D1)를 통해 고압출력단(10)에 연결되고, 다이오우드(D1)의 캐소우드단은 가번저항(VR2)(VR2)의 저항(R1)의 직렬 연결을 통해 접지 접속되고, 상기 가변저항(VR2)(VR2)의 각 중앙 단자는 각각 포커스단자(11)와 스크린단자(12)에 접속되며 저항(R1)의 일단은 고압변동검출부(7)를 거쳐 상기 고압제어단(3)에 접속되는 구성으로 상기한 회로 구성의 동작상태를 제 1 도에 도시한 바에 따라 설명하면 다음과 같다.Referring to the block diagram of the conventional high voltage control circuit shown in FIG. 1, the 120 (V) input terminal 1 is connected to the high voltage control unit 3, the high voltage control unit 3 is a flyback transformer (9) Is connected to one end of the primary side of the synchronous signal input terminal 2, and is connected to the other end of the flyback transformer 9 through the horizontal oscillation unit 4, the horizontal drive 5 and the high voltage output unit 6 in sequence. One end of the secondary side of the flyback transformer 9 is connected to the high voltage output terminal 10 through the diode D1, and the cathode terminal of the diode D1 is connected to the resistance R1 of the additional resistance VR2 and VR2. Ground connection is made through a series connection, and each center terminal of the variable resistors VR2 and VR2 is connected to the focus terminal 11 and the screen terminal 12, respectively, and one end of the resistor R1 is the high voltage fluctuation detecting unit 7. The operation state of the above-described circuit configuration, which is connected to the high voltage control stage 3 through the above, will be described as shown in FIG. It's like
제 1 도의 A점에 22(KHz)가 입력될 때 115(V)가 플라이백트랜스(9)의 1차측 권선에 인가되어 고압 출력부(6)와의 조합로 최대치 전압 1,000(V)이 인가되면 플라이백트랜스(9)의 2차측으로 23(KV)가 유기 되어 반파정류된 후 고압출력단(10)을 통해 브라운관의 애노드단에 인가되며, 가변저항(VR1)(VR2)의 중앙단자에 연결된 포커스단자(11)와 스크린단자(12)를 통해 브라운관의 그리드단에 인가된다.When 22 (KHz) is input at the point A of FIG. 1, 115 (V) is applied to the primary winding of the flyback transformer 9 so that a maximum voltage of 1,000 (V) is applied in combination with the high voltage output unit 6. 23 (KV) is induced to the secondary side of the flyback transformer (9) is half-wave rectified and applied to the anode terminal of the CRT through the high-voltage output terminal 10, the focus connected to the center terminal of the variable resistor (VR1) (VR2) It is applied to the grid end of the CRT via the terminal 11 and the screen terminal 12.
상기와 동시에 고압출력단(10)으로 출력되는 전압은 가변저항(VR1)(VR2)과 저항 (R1)에 의해 분압되어 고압변동 검출회로부(7)에 인가되게 되며 고압변동검출부(7)에서는 일정한 고압을 유지하도록 저압을 고압제어부(3)에 인가시키게 된다.Simultaneously with this, the voltage output to the high voltage output terminal 10 is divided by the variable resistors VR1 and VR2 and the resistor R1 to be applied to the high voltage fluctuation detecting circuit 7 and the high voltage fluctuation detecting part 7 is constant. Low pressure is applied to the high pressure control unit 3 so as to maintain.
이때 수평주파수가 15(KHz)로 수평동기신호 입력단자(2)에 인가되면 고압이 증가하게 되고 저항(R1)의 전압은 상승하게 되어 고압변동 검출부(7)에 인가되게 되므로 고압변동 검출부(7)에서는 22(KHz)의 입력시보다 더 낮은 전압을 출력시켜 고압제어부(3)를 통해 플라이백트랜스(9)의 1차측에서는 80(V)를 유지시키도록 한다.At this time, when the horizontal frequency is applied to the horizontal synchronous signal input terminal 2 at 15 (KHz), the high voltage is increased and the voltage of the resistor R1 is increased to be applied to the high voltage fluctuation detection unit 7. ) Outputs a lower voltage than the input of 22 (KHz) to maintain 80 (V) on the primary side of the flyback transformer 9 through the high-pressure control unit (3).
동시에 저항(R1)을 거쳐 트랜지스터(Q1)의 베이스단에 접속되고, 그 베이스단은 저항(R2)을 거쳐 트랜지스터(Q2)의 콜렉터단에 접속되고 에미터단이 접지접속된 트랜지스터(Q2)의 베이스단은 저항 (R3)을 거쳐 모드절환신호입력단(16)에 접속되고, 상기 트랜지스터(Q1)의 콜렉터단은 고압제어부(19)의 트랜지스터(Q3) 에미터단에 접속되며 다이오드(D2)를 거쳐 85(V) 입력단(14)에 접속되고 트랜지스터(Q3)의 에미터단은 저항(R4)을 거쳐 그의 베이스단에 접속되며 그 베이스단은 저항(R5)을 거쳐 에미터단이 접지 접속된 트랜지스터(Q4)의 콜렉터단에 접속되고, 상기 트랜지스터(Q3)의 콜렉터단은 플라이백트랜스(24)의 1차측 일단에 접속되고, 이와는 한편으로 수평동기 신호입력단(17)이 수평발진부(20)와 수평드라이브(21) 및 고압출력부(22)를 순차거쳐 플라이백트랜스(24)의 1차측 타단에 접속되고, 이때 브라운관의 빔(Beam)전류의 증가로 인한 고압 감소시 및 빔전류의 감소로 인한 고압 증가시에도 상기와 같은 동작을 고압 변동검출회로부(7)에서 해줌으로써 고압출력단(23)의 고압을 항상23(KV)가 되도록 유지시켜 주게 되나 고압제어부(3)가 고압제거용 트랜지스터를 1개만 사용하여 트랜지스터의 손실이 증가하게 되었고, 많은 열이 발생하여 화재의 위험성이 있어 트랜지스터의 열화로 인하 제품의 수명단축 및 제품의 신뢰성을 절하시키는 등의 문제점이 있었는바, 이에 본 고안은 상기한 문제점을 개선시키기 위해 안출된 것으로 저항과 트랜지스터로 구성된 전압절환부와 고압제어부를 연결구성시켜 고압제어용 크랜지스터의 발열을 방지시키도록 한 것으로 이하 그 회로 구성을 제 2 도의 블록다이어그램과 제 3 도의 상세도에 따라 설명하면 120(V) 입력단(15)은 전압절환부(18)의 트랜지스터(Q1)의 에미터단에 접속되며 상기 플라이백트랜스(24)의 2차측에 연결된 저항(R11)의 일단은 저항 (R8)을 거쳐 고압변동검출부(23)의 비교기(IC1)마이너스 입력단에 접속되고, 비교기(IC1)의 출력단은 저항(R6)을 거쳐 고압제어부(19)의 트랜지스터(Q4)베이스단에 접속되는 구성으로, 상기한 회로 구성의 동작 상태 및 작용효과를 제 3 도에 도시된 바에 따라 설명하면 다음과 같다.At the same time, the base of transistor Q2 is connected to the base terminal of transistor Q1 via resistor R1, and the base terminal thereof is connected to the collector terminal of transistor Q2 via resistor R2 and the emitter terminal is grounded. The stage is connected to the mode switching signal input terminal 16 via a resistor R3, and the collector terminal of the transistor Q1 is connected to the emitter terminal of the transistor Q3 of the high voltage control unit 19 and is connected to the 85 through the diode D2. (V) Transistor Q4 connected to the input terminal 14 and the emitter terminal of the transistor Q3 is connected to its base terminal via a resistor R4, and the base terminal thereof is grounded to the emitter terminal via a resistor R5. Is connected to the collector terminal of the transistor Q3, and the collector terminal of the transistor Q3 is connected to one end of the primary side of the flyback transformer 24, while the horizontal synchronous signal input terminal 17 is connected to the horizontal oscillator 20 and the horizontal drive ( 21) and the flyback transformer 24 through the high voltage output unit 22 in sequence. It is connected to the other end of the primary side, and the above operation is performed by the high pressure fluctuation detection circuit 7 even when the high pressure decreases due to the increase in the beam current of the CRT and when the high pressure increases due to the decrease in the beam current. The high voltage of the output terminal 23 is always maintained to be 23 (KV), but the high voltage controller 3 uses only one high voltage removing transistor to increase the loss of the transistor. There is a problem such as a reduction in the lifetime of the product and a decrease in the reliability of the product due to the degradation of the transistor, the present invention was devised to improve the above problems, the voltage switching unit consisting of a resistor and a transistor and a high voltage control unit In order to prevent heat generation of the high-voltage control transistor, the circuit configuration is shown in the block diagram of FIG. 2 and FIG. In detail, the 120 (V) input terminal 15 is connected to the emitter terminal of the transistor Q1 of the voltage switching unit 18 and has one end of the resistor R11 connected to the secondary side of the flyback transformer 24. Silver resistor R8 is connected to negative input terminal of comparator IC1 of high voltage fluctuation detecting section 23, and output terminal of comparator IC1 is connected to base terminal of transistor Q4 of high voltage controller 19 via resistor R6. With the configuration to be connected, the operation state and effect of the above-described circuit configuration will be described as shown in FIG. 3 as follows.
제 3 도의 A점에 22(KHz)가 인가되면 모드절환 입력단(16)으로 하이전압이 인가되어 전압절환부(18)의 트랜지스터(Q2)를 구동시켜 전류가 저항(R1)(R2)을 통해 흐르고, 상기 저항(R1)(R2)에 의해 분압된 전압이 트랜지스터(Q1)의 베이스단에 인가되어 트랜지스터(Q1)를 구동시킴으로 트랜지스터(Q1)의 콜렉터단에는 120(V)가 출력되어 고압제어부(19)의 트랜지스터(Q3) 에미터단에 인가되고, 상기 트랜지스터(Q3)의 베이스단에는 저항 (R4)(R5)에 의해 분압된 전압이 인가되어 트랜지스터(Q3)을 구동시켜 그의 콜렉터단에는 115(V)가 출력되어 플라이백트랜스(24)의 1차측 권선에 인가되게 되고, 이와 동시에 수평발진부(20)와 수평드라이브(21) 및 고압출력부(22)를 순차거친 수평주파수를 조합하여 최대치 전압 1,000(V)를 플라이백트랜스(24)의 1차측 권선에 인가한다.When 22 (KHz) is applied to the point A of FIG. 3, a high voltage is applied to the mode switching input terminal 16 to drive the transistor Q2 of the voltage switching unit 18 so that a current flows through the resistors R1 and R2. The voltage divided by the resistors R1 and R2 is applied to the base terminal of the transistor Q1 to drive the transistor Q1, so that 120 (V) is output to the collector terminal of the transistor Q1, thereby providing a high voltage controller. A transistor Q3 is applied to the emitter terminal of transistor 19, a voltage divided by resistors R4 and R5 is applied to the base terminal of transistor Q3 to drive transistor Q3, and 115 to its collector terminal. (V) is output and is applied to the primary winding of the flyback transformer 24, and at the same time, the maximum value is obtained by combining the horizontal frequency in which the horizontal oscillator 20, the horizontal drive 21 and the high voltage output unit 22 are sequentially processed. A voltage of 1,000 V is applied to the primary winding of the flyback transformer 24.
상기에 따라 플라이백트랜스(24)의 2차측권선은 1차측권선에서 발생되는 자기장을 유도하여 고압출력단(26)으로 23(KV)를 출력시키고, 상기 출력전압 23(KV)는 가변저항(VR3)(VR4)과 저항(R11)에 의해 분압되어 저항(R8)을 통해 고압변동 검출부(23)의 비교기(IC1) 마이너스단에 인가되고, 비교기(IC1)의 플러스단으로는 제너다이우드(ZD1)에 의한 제너전압이 인가되어 비교기(IC1)는 플러스단과 마이너스단에 인가된 전압을 비교하여 저항(R6)을 거쳐 고압제어부(19)의 트랜지스터(Q4)베이스단에 인가되어 트랜지스터(Q3)(Q4)를 제어시킴으로써 플라이백트랜스(24)로 인가되는 전압을 제어하게 된다.According to the above, the secondary winding of the flyback transformer 24 induces a magnetic field generated from the primary winding to output 23 (KV) to the high voltage output terminal 26, and the output voltage 23 (KV) is a variable resistor (VR3). ) Is divided by VR4 and resistor R11 and applied to the negative terminal of comparator IC1 of high-voltage fluctuation detecting unit 23 through resistor R8, and the zener die ZD1 is the positive terminal of comparator IC1. Is applied to the base terminal of the transistor Q4 of the high voltage control unit 19 through the resistor R6 by comparing the voltages applied to the positive and negative terminals. By controlling Q4), the voltage applied to the flyback transformer 24 is controlled.
따라서 브라운관의 빔 전류 증감으로 인한 고압의 변동을 항상 23(KV)가 되게 하여 플라이백트랜스(24)의 1차측권선에 인가되는 전압을 조정하여 된다.Therefore, the voltage applied to the primary winding of the flyback transformer 24 is adjusted by changing the high voltage due to the increase or decrease of the beam current of the CRT to always be 23 (KV).
이때 A점에 15(KHz)가 인가되면 모드절환신호입력단(16)에는 로우전압이 출력되어 트랜지스터(Q2)를 오프시키므로 트랜지스터(Q1)의 베이스 전압은 트랜지스터(Q2)의 콜렉터 전압과 같게 되어 트랜지스터(Q1)를 오프시키게 된다.At this time, when 15 (KHz) is applied to the point A, a low voltage is output to the mode switching signal input terminal 16 to turn off the transistor Q2. Therefore, the base voltage of the transistor Q1 becomes equal to the collector voltage of the transistor Q2. (Q1) is turned off.
따라서 85(V) 입력단(14)에서 출력되는 전압은 다이오드(D2)를 통해 트랜지스터(Q3)의 에미터단에 인가되어 15(KHz)의 입력시 A점 전압과 유사하게 되므로, 고압출력단(26)으로 항상 23(KV)가 출력될 수 있도록 플라이백트랜스(24)의 1차권선부에 인가되는 전압을 조정하게 된다.Therefore, the voltage output from the 85 (V) input terminal 14 is applied to the emitter terminal of the transistor Q3 through the diode D2 and becomes similar to the point A voltage at the input of 15 (KHz). Therefore, the voltage applied to the primary winding portion of the flyback transformer 24 is adjusted so that 23 (KV) is always output.
미설명 부호 8,25는 ABL 검출부이고, 13,29는 ABL 출력단 이다.Reference numerals 8 and 25 denote ABL detection units, and 13 and 29 denote ABL output terminals.
따라서 고압제어부(19)의 고압제어용 트랜지스터 열발생을 최소화하며, 열의 발생으로 일어나는 화재의 위험성 및 제품의 수명단축을 방지시켜 제품의 신뢰도를 향상시키는 장점을 제공해 준다.Therefore, it minimizes the high-temperature control transistor heat generation of the high-pressure control unit 19, and provides the advantage of improving the reliability of the product by preventing the risk of fire and shortening the life of the product caused by the generation of heat.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019860011198U KR900009575Y1 (en) | 1986-07-29 | 1986-07-29 | High voltage control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019860011198U KR900009575Y1 (en) | 1986-07-29 | 1986-07-29 | High voltage control circuit |
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| Publication Number | Publication Date |
|---|---|
| KR880003507U KR880003507U (en) | 1988-04-13 |
| KR900009575Y1 true KR900009575Y1 (en) | 1990-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019860011198U KR900009575Y1 (en) | 1986-07-29 | 1986-07-29 | High voltage control circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR19990012878A (en) * | 1997-07-31 | 1999-02-25 | 이형도 | Protection circuit of power converter |
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1986
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