KR900004045A - Method for manufacturing double heterojunction light emitting diode having junction current limiting region - Google Patents

Method for manufacturing double heterojunction light emitting diode having junction current limiting region Download PDF

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Publication number
KR900004045A
KR900004045A KR1019880010134A KR880010134A KR900004045A KR 900004045 A KR900004045 A KR 900004045A KR 1019880010134 A KR1019880010134 A KR 1019880010134A KR 880010134 A KR880010134 A KR 880010134A KR 900004045 A KR900004045 A KR 900004045A
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KR
South Korea
Prior art keywords
light emitting
emitting diode
current limiting
limiting region
junction current
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Application number
KR1019880010134A
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Korean (ko)
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KR910005392B1 (en
Inventor
김용원
Original Assignee
김용원
대우전자부품 주식회사
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Priority to KR1019880010134A priority Critical patent/KR910005392B1/en
Publication of KR900004045A publication Critical patent/KR900004045A/en
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Publication of KR910005392B1 publication Critical patent/KR910005392B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

내용 없음.No content.

Description

접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법Method for manufacturing double heterojunction light emitting diode having junction current limiting region

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명 실시예에 의한 발광다이오드의 단면도.3 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

제4도는 본 발명 실시예의 제조공정도.4 is a manufacturing process diagram of an embodiment of the present invention.

Claims (2)

2중 헤테로 구조의 표면 방출형 발광다이오드를 제조함에 있어서, 부(負)전도성 반도체 기판(21) 표면중 전류집속영역(C)으로 할 부분에 Si3N4또는 SiO2절연물(31)을 패턴상으로 증착하여 그 이외의 부분에 Zn 확산시켜 접합전류제한 영역으로 되는 정(正) 전도성 Zn 확산층(26)을 반도체 기판에 직접 형성하고, 상기 패턴상으로 증착된 절연물을 제거한 다음에 그 상부로 부전도성 제1피복층, 정전도성 활성층, 정전도성 제2, 제3피복층을 통상의 액상결정 성장법으로 성장함을 특징으로 하는 접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법.In manufacturing a surface-emitting light emitting diode having a double hetero structure, a Si 3 N 4 or SiO 2 insulator 31 is patterned on a portion of the surface of the negative conductive semiconductor substrate 21 to serve as the current focusing region C. A positively conductive Zn diffusion layer 26 is formed directly on the semiconductor substrate, which is deposited onto the Zn diffusion to form a junction current limiting region by depositing it on other portions, and then removing the insulator deposited on the pattern, and then A method for manufacturing a double heterojunction light emitting diode having a junction current limiting region, wherein the first conductive coating layer, the electroconductive active layer, and the second conductive coating layer are grown by a conventional liquid crystal growth method. 제1항에 있어서, Zn 확산층(26)을 위한 Si3N4또는 SiO2절연물(31)의 패턴 처리는 포토레지스터(41)를 써서 포토레지스터 위에 올려진 상기 절연물을 포토레지스터와 함께 제거하는 방법의 리프트 오프(Lift-off)과정을 포함하는 접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법.The method of claim 1, wherein the patterning of the Si 3 N 4 or SiO 2 insulator 31 for the Zn diffusion layer 26 removes the insulator on the photoresist using a photoresist 41 together with the photoresist. A method of manufacturing a double heterojunction light emitting diode having a junction current limiting region including a lift-off process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880010134A 1988-08-09 1988-08-09 Manufacturing method of double-hetero junction type led with junction current limited region KR910005392B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880010134A KR910005392B1 (en) 1988-08-09 1988-08-09 Manufacturing method of double-hetero junction type led with junction current limited region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880010134A KR910005392B1 (en) 1988-08-09 1988-08-09 Manufacturing method of double-hetero junction type led with junction current limited region

Publications (2)

Publication Number Publication Date
KR900004045A true KR900004045A (en) 1990-03-27
KR910005392B1 KR910005392B1 (en) 1991-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880010134A KR910005392B1 (en) 1988-08-09 1988-08-09 Manufacturing method of double-hetero junction type led with junction current limited region

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Publication number Publication date
KR910005392B1 (en) 1991-07-29

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