KR900002409A - Metal layer connection method using multi-layer photo process - Google Patents

Metal layer connection method using multi-layer photo process

Info

Publication number
KR900002409A
KR900002409A KR1019880009160A KR880009160A KR900002409A KR 900002409 A KR900002409 A KR 900002409A KR 1019880009160 A KR1019880009160 A KR 1019880009160A KR 880009160 A KR880009160 A KR 880009160A KR 900002409 A KR900002409 A KR 900002409A
Authority
KR
South Korea
Prior art keywords
connection method
photo process
metal layer
layer
layer connection
Prior art date
Application number
KR1019880009160A
Other languages
Korean (ko)
Other versions
KR920002026B1 (en
Inventor
박한수
홍정인
Original Assignee
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성반도체통신 주식회사 filed Critical 삼성반도체통신 주식회사
Priority to KR1019880009160A priority Critical patent/KR920002026B1/en
Publication of KR900002409A publication Critical patent/KR900002409A/en
Application granted granted Critical
Publication of KR920002026B1 publication Critical patent/KR920002026B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
KR1019880009160A 1988-07-21 1988-07-21 Metal layer connecting method using multi-layer photolithographic technics KR920002026B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880009160A KR920002026B1 (en) 1988-07-21 1988-07-21 Metal layer connecting method using multi-layer photolithographic technics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880009160A KR920002026B1 (en) 1988-07-21 1988-07-21 Metal layer connecting method using multi-layer photolithographic technics

Publications (2)

Publication Number Publication Date
KR900002409A true KR900002409A (en) 1990-02-28
KR920002026B1 KR920002026B1 (en) 1992-03-09

Family

ID=19276289

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880009160A KR920002026B1 (en) 1988-07-21 1988-07-21 Metal layer connecting method using multi-layer photolithographic technics

Country Status (1)

Country Link
KR (1) KR920002026B1 (en)

Also Published As

Publication number Publication date
KR920002026B1 (en) 1992-03-09

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