KR900002064A - 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치 - Google Patents

반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치 Download PDF

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Publication number
KR900002064A
KR900002064A KR1019890009928A KR890009928A KR900002064A KR 900002064 A KR900002064 A KR 900002064A KR 1019890009928 A KR1019890009928 A KR 1019890009928A KR 890009928 A KR890009928 A KR 890009928A KR 900002064 A KR900002064 A KR 900002064A
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South Korea
Prior art keywords
wafer substrate
reference light
infrared rays
semiconductor wafer
light
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KR1019890009928A
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English (en)
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KR960013995B1 (ko
Inventor
지로오 아리마
히로지 츠지무라
도모노리 나리타
히로키 다케부치
Original Assignee
다시마 히데오
미놀타 카메라 가부시끼 가이샤
고다까 토시오
도오교오 에레구토론 가부시끼 가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G01J5/53—Reference sources, e.g. standard lamps; Black bodies
    • G01J5/532—Reference sources, e.g. standard lamps; Black bodies using a reference heater of the emissive surface type, e.g. for selectively absorbing materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
    • G01J5/0805—Means for chopping radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • G01J5/602—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature using selective, monochromatic or bandpass filtering

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음

Description

반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명의 1실시예인 램프 어니일 장치를 나타낸 개략도,
제2도는, 제1도에 도시한 장치에서 사용되고 있는 온도 측정기구를 나타낸 도면,
제3도는, 본 발명의 다른 실시예로서 다른 형식의 램프 어니일장치를 나타낸 개략도.

Claims (9)

  1. 처리중인 반도체 웨이퍼 기판에 적외선을 포함하는 참조광을 단속적으로 조사하는 공정과, 상기 조사 참조광에 포함되는 적외선중 파장이 1㎛ 이하이며, 파장이 다른 복수 종류의 적외선을 선택적으로 측광하는 공정과, 상기 웨이퍼 기판으로부터의 참조광의 반사광에 포함되는 적외선 및 상기 웨이퍼 기판 자체로부터 방사되는 적외선중, 상기 선택된 파장과 같은 각 파장의 적외선을 측광하는 공정과, 상기 웨이퍼 기판으로부터의 참조광의 반사광에 포함되는 적외선 및 상기 웨이퍼 기판 자체로부터 방사되는 적외선을 식별하는 공정과, 상기 조사 참조광 및 반사 참조광의 측광 결과로부터, 참조광을 조사하는 상기 웨이퍼 기판 부분의 표면 온도를 산출하는 공정으로 되는 것을 특징으로 하는 반도체 웨이퍼 기판의 표면 온도 측정방법.
  2. 제1항에 있어서, 참조광은 적외선으로 되는 반도체 웨이퍼기판의 표면 온도 측정방법.
  3. 제1항에 있어서, 온도의 상출을 위하여 적어도 3종류의 파장의 적외선을 측광하는 반도체 웨이퍼 기판의 표면 온도 측정방법.
  4. 제1항에 있어서, 참조광을 기판 표면의 특정 영역 전체에 걸쳐서 주사시키는 반도체 웨이퍼 기판의 표면 온도 측정방법.
  5. 반도체 웨이퍼 기판을 가열하는 수단과, 상기 웨이퍼 기판에 적외선을 포함한 참조광을 단속적으로 조사하는 수단과, 상기 조사 참조광에 포함되는 적외선중 파장이 1㎛ 이하이며, 파장이 다른 복수 종류의 적외선을 선택적으로 측광하는 수단과, 상기 웨이퍼 기판으로부터의 참조광의 반사광에 포함되는 적외선 및 상기 웨이퍼 기판 자체로부터 방사되는 적외선중, 상기 선택된 파장과 같은 각 파장의 적외선을 측광하는 수단과, 상기 웨이퍼 기판으로부터의 참조광의 반사광에 포함되는 적외선 및 상기 웨이퍼 기판 자체로부터 방사되는 적외선을 식별하는 수단과, 상기 조사 참조광 및 반사 참조광의 측정 결과로부터, 참조광을 조사하는 상기 웨이퍼 기판 부분의 표면 온도를 산출하는 수단과, 상기 산출 온도 정보에 의거하여 상기 가열 수단을 제어하는 수단으로 되는 것을 특징으로 하는 반도체 웨이퍼 기판의 열처리 장치.
  6. 제5항에 있어서, 참조광이 적외선으로 되는 반도체 웨이퍼 기판의 열처리 장치.
  7. 제5항에 있어서, 온도의 산출을 위하여 적어도 3종류의 파장의 적외선을 측광하는 반도체 웨이퍼 기판의 열처리 장치.
  8. 제5항에 있어서, 참조광을 기판 표면의 특정 영역 전체에 걸쳐서 주사시키는 반도체 웨이퍼 기판의 열처리 장치.
  9. 제5항에 있어서, 웨이퍼 기판의 주표면과 종표면과의 가열 조건이 실질적으로 같은 것을 조건으로 하여, 종표면의 온도를 측정하여 상기 가열 수단을 제어하기 위한 온도 정보로 하는 반도체 웨이퍼 기판의 열처리 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890009928A 1988-07-15 1989-07-12 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치 KR960013995B1 (ko)

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JP176343 1986-11-17
JP17634388 1988-07-15

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KR960013995B1 KR960013995B1 (ko) 1996-10-11

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KR19980024481A (ko) * 1996-09-12 1998-07-06 조셉 제이. 스위니 적응성 온도 제어기 및 그 동작 방법

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