KR900000988A - Method for manufacturing semiconductor device using etch-back process - Google Patents

Method for manufacturing semiconductor device using etch-back process

Info

Publication number
KR900000988A
KR900000988A KR1019880007467A KR880007467A KR900000988A KR 900000988 A KR900000988 A KR 900000988A KR 1019880007467 A KR1019880007467 A KR 1019880007467A KR 880007467 A KR880007467 A KR 880007467A KR 900000988 A KR900000988 A KR 900000988A
Authority
KR
South Korea
Prior art keywords
etch
semiconductor device
manufacturing semiconductor
back process
manufacturing
Prior art date
Application number
KR1019880007467A
Other languages
Korean (ko)
Other versions
KR920000629B1 (en
Inventor
최규현
이형섭
육태윤
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019880007467A priority Critical patent/KR920000629B1/en
Publication of KR900000988A publication Critical patent/KR900000988A/en
Application granted granted Critical
Publication of KR920000629B1 publication Critical patent/KR920000629B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019880007467A 1988-06-21 1988-06-21 Manufacturing method of semiconductor device using etch-back process KR920000629B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880007467A KR920000629B1 (en) 1988-06-21 1988-06-21 Manufacturing method of semiconductor device using etch-back process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880007467A KR920000629B1 (en) 1988-06-21 1988-06-21 Manufacturing method of semiconductor device using etch-back process

Publications (2)

Publication Number Publication Date
KR900000988A true KR900000988A (en) 1990-01-31
KR920000629B1 KR920000629B1 (en) 1992-01-17

Family

ID=19275365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880007467A KR920000629B1 (en) 1988-06-21 1988-06-21 Manufacturing method of semiconductor device using etch-back process

Country Status (1)

Country Link
KR (1) KR920000629B1 (en)

Also Published As

Publication number Publication date
KR920000629B1 (en) 1992-01-17

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Legal Events

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E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20051206

Year of fee payment: 15

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