KR900000911A - Method for forming a semiconductor integrated circuit device - Google Patents

Method for forming a semiconductor integrated circuit device

Info

Publication number
KR900000911A
KR900000911A KR1019890007602A KR890007602A KR900000911A KR 900000911 A KR900000911 A KR 900000911A KR 1019890007602 A KR1019890007602 A KR 1019890007602A KR 890007602 A KR890007602 A KR 890007602A KR 900000911 A KR900000911 A KR 900000911A
Authority
KR
South Korea
Prior art keywords
forming
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Application number
KR1019890007602A
Other languages
Korean (ko)
Other versions
KR0136377B1 (en
Inventor
겐이찌 구로다
아끼노리 마쯔오
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 가부시끼가이샤 히다찌세이사꾸쇼
Publication of KR900000911A publication Critical patent/KR900000911A/en
Application granted granted Critical
Publication of KR0136377B1 publication Critical patent/KR0136377B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microcomputers (AREA)
  • Read Only Memory (AREA)
KR1019890007602A 1988-06-09 1989-06-02 Method of fabricating a semiconductor integrated circuit device KR0136377B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14272388A JP2540600B2 (en) 1988-06-09 1988-06-09 Method for forming semiconductor integrated circuit device
JP63-142723 1988-06-09

Publications (2)

Publication Number Publication Date
KR900000911A true KR900000911A (en) 1990-01-30
KR0136377B1 KR0136377B1 (en) 1998-04-24

Family

ID=15322084

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007602A KR0136377B1 (en) 1988-06-09 1989-06-02 Method of fabricating a semiconductor integrated circuit device

Country Status (2)

Country Link
JP (1) JP2540600B2 (en)
KR (1) KR0136377B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1005079B1 (en) * 1998-11-26 2012-12-26 STMicroelectronics Srl Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
CN101057331B (en) * 2004-11-15 2010-06-16 Nxp股份有限公司 Method for converting flash into ROM and semiconductor device thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190767A (en) * 1986-02-18 1987-08-20 Toshiba Corp Semiconductor memory and manufacture thereof

Also Published As

Publication number Publication date
KR0136377B1 (en) 1998-04-24
JPH021971A (en) 1990-01-08
JP2540600B2 (en) 1996-10-02

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Legal Events

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A201 Request for examination
E701 Decision to grant or registration of patent right
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Payment date: 20020105

Year of fee payment: 5

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