KR890700175A - Manufacturing method of silicon carbide - Google Patents

Manufacturing method of silicon carbide

Info

Publication number
KR890700175A
KR890700175A KR1019880700953A KR880700953A KR890700175A KR 890700175 A KR890700175 A KR 890700175A KR 1019880700953 A KR1019880700953 A KR 1019880700953A KR 880700953 A KR880700953 A KR 880700953A KR 890700175 A KR890700175 A KR 890700175A
Authority
KR
South Korea
Prior art keywords
manufacturing
silicon carbide
carbide
silicon
Prior art date
Application number
KR1019880700953A
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR890700175A publication Critical patent/KR890700175A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
KR1019880700953A 1986-12-10 1988-08-09 Manufacturing method of silicon carbide KR890700175A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB868629496A GB8629496D0 (en) 1986-12-10 1986-12-10 Silicon carbide
PCT/GB1987/000880 WO1988004333A1 (en) 1986-12-10 1987-12-04 Production of silicon carbide

Publications (1)

Publication Number Publication Date
KR890700175A true KR890700175A (en) 1989-03-10

Family

ID=10608765

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700953A KR890700175A (en) 1986-12-10 1988-08-09 Manufacturing method of silicon carbide

Country Status (5)

Country Link
EP (1) EP0295272A1 (en)
JP (1) JPH01502182A (en)
KR (1) KR890700175A (en)
GB (1) GB8629496D0 (en)
WO (1) WO1988004333A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445319B1 (en) * 1990-03-05 1995-11-08 International Business Machines Corporation Process for fabricating silicon carbide films with a predetermined stress
DE4121798A1 (en) * 1991-07-02 1993-01-14 Daimler Benz Ag MULTILAYERED MONOCRISTALLINE SILICON CARBIDE COMPOSITION
DE4135076A1 (en) * 1991-10-24 1993-04-29 Daimler Benz Ag MULTILAYERED, MONOCRISTALLINE SILICON CARBIDE COMPOSITION
GB2267291B (en) * 1992-05-27 1995-02-01 Northern Telecom Ltd Plasma deposition process
US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
KR960012710B1 (en) * 1993-10-11 1996-09-24 한국화학연구소 Process for the preparation of sic thin film from organo silicon compound
JPWO2015137389A1 (en) * 2014-03-11 2017-04-06 コニカミノルタ株式会社 Method for producing gas barrier film
JP6488607B2 (en) * 2014-09-22 2019-03-27 株式会社Sumco Manufacturing method of single crystal SiC wafer
DE102016203324A1 (en) 2016-03-01 2017-09-07 Evonik Degussa Gmbh Process for producing a silicon-carbon composite

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide
JPH0635323B2 (en) * 1982-06-25 1994-05-11 株式会社日立製作所 Surface treatment method
DE3375700D1 (en) * 1982-10-12 1988-03-24 Nat Res Dev Infra red transparent optical components
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
NL8500645A (en) * 1985-03-07 1986-10-01 Philips Nv METHOD FOR depositing a layer consisting essentially of silicon carbide on a substrate

Also Published As

Publication number Publication date
WO1988004333A1 (en) 1988-06-16
GB8629496D0 (en) 1987-01-21
JPH01502182A (en) 1989-08-03
EP0295272A1 (en) 1988-12-21

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Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid