KR890011129A - Wiring Structure of Semiconductor Pressure Sensor - Google Patents

Wiring Structure of Semiconductor Pressure Sensor Download PDF

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Publication number
KR890011129A
KR890011129A KR870013931A KR870013931A KR890011129A KR 890011129 A KR890011129 A KR 890011129A KR 870013931 A KR870013931 A KR 870013931A KR 870013931 A KR870013931 A KR 870013931A KR 890011129 A KR890011129 A KR 890011129A
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KR
South Korea
Prior art keywords
substrate
pressure sensor
conductive
semiconductor pressure
predetermined position
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Application number
KR870013931A
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Korean (ko)
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KR900008652B1 (en
Inventor
마사노리 니시구찌
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나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
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Application filed by 나까하라 쯔네오, 스미도모덴기고오교오 가부시기가이샤 filed Critical 나까하라 쯔네오
Publication of KR890011129A publication Critical patent/KR890011129A/en
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Publication of KR900008652B1 publication Critical patent/KR900008652B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors

Abstract

내용 없음No content

Description

반도체압력센서의 배선구조Wiring Structure of Semiconductor Pressure Sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 반도체압력센서의 배선구조의 제1실시예를 도시한 제2도의 A-A선 종단면도.1 is a longitudinal cross-sectional view taken along the line A-A of FIG. 2 showing a first embodiment of the wiring structure of the semiconductor pressure sensor of the present invention.

제2도는 반도체압력센서의 평면도.2 is a plan view of a semiconductor pressure sensor.

제3도는 배선패턴을 도시한 제1도의 B-B선 횡단면도.3 is a cross-sectional view taken along line B-B in FIG. 1 showing a wiring pattern.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

2 : 에칭정지층 3, 4 : 배선부2: etching stop layer 3, 4: wiring part

6 : 기판 9, 9a : Al패드6: board 9, 9a: Al pad

12, 19 : 확산리이드부 12a, 12b : 확산리이드영역12, 19: diffusion lead portion 12a, 12b: diffusion lead region

21a, 21b : 구멍 61, 62, 63, 64, 81, 82, 83, 84 : 변형게이지저항체21a, 21b: holes 61, 62, 63, 64, 81, 82, 83, 84: strain gage resistor

Claims (6)

실리콘단결정으로 이루어진 기체에 도전형이온의 주입 혹은 퇴적확산법에 의해서 에칭정지층으로서 작용하는 도전형이온의 고농도층을 형성한 후, 소정의 두께만큼 에피택셜성장에 의해서 단결정실리콘을 적층함으로서 기판을 형성하고 다음에 에칭에 의해서 기판의 이면에 오목부를 형성하고, 확산저항체에 의해서 기판위의 단자시이를 배선하는 구조의 다이아프램형 반도체압력센서에 있어서, 도전형이온의 주입 혹은 퇴적확산법에 의해서 에칭정지층과 병렬로 형성되는 복수본의 배선영역과, 상기 에칭정지층 및 복수본의 배선영역과 기판의 소정위치와의 사이에 형성되는 접속영역과, 기판의 소정위치와 기판에 형성되는 어느것인가의 단자와의 사이에 형성되는 도전형의 확산영역을 구비한 것을 특징으로 하는 반도체압력센서의 배선구조.A substrate is formed by stacking single crystal silicon by epitaxial growth by a predetermined thickness after forming a high concentration layer of a conductive ion that acts as an etching stop layer by implanting or depositing a conductive ion into a gas made of silicon single crystal. Next, in the diaphragm type semiconductor pressure sensor having a structure in which a recess is formed on the back surface of the substrate by etching, and the terminal seam on the substrate is wired by the diffusion resistor, the etching stops by implanting or depositing diffusion of conductive ions. A plurality of wiring regions formed in parallel with the layer, a connection region formed between the etching stop layer and the plurality of wiring regions and a predetermined position of the substrate, any of the predetermined positions of the substrate and the substrate. And a conductive diffusion region formed between the terminals. 제1항에 있어서, 상기 접속영역이 도전형이온의 주입에 의해서 형성된 것인 반도체압력센서의 배선구조.The wiring structure of a semiconductor pressure sensor according to claim 1, wherein said connection region is formed by implantation of a conductive ion. 제1항에 있어서, 상기 접속영역이 기판의 소정위치에 적어도 에칭정지층에 근접하는 깊이 이상의 구멍이 형성되고, 이 구멍의 둘레면에 도전형의 확산영역이 형성된 것인 반도체압력센서의 배선구조.2. The wiring structure of a semiconductor pressure sensor as claimed in claim 1, wherein a hole having a depth greater than or equal to the etching stop layer is formed at a predetermined position of the substrate, and a conductive diffusion region is formed in the circumferential surface of the hole. . 실리콘단결정으로 이루어진 기체에 도전형이온의 주입 혹은 퇴적확산법에 의해서 에칭정지층으로서 작용하는 도전형이온의 고농도층을 형성한 후, 소정의 두께만큼 에피택셜성장에 의해서 단결정실리콘을 적층함으로서 기판을 형성하고, 다음에 에칭에 의해서 기판의 이면에 오목부를 형성하고, 확산저항체에 의해서 기판위의 단자사이를 배선하는 구조의 다이아프램형 반도체압력센서에 있어서, 기판의 소정위치에 적어도 에칭정지층에 근접하는 깊이 이상의 깊은 구멍이 형성되어 있음과 동시에, 어느것인가의 단자와 구멍사이 및 구멍의 둘레면에 도전형의 확산영역이 형성되어 있는 것을 특징으로 하는 반도체압력센서의 배선구조.A substrate is formed by stacking single crystal silicon by epitaxial growth by a predetermined thickness after forming a high concentration layer of a conductive ion that acts as an etching stop layer by implanting or depositing a conductive ion into a gas made of silicon single crystal. Next, a diaphragm type semiconductor pressure sensor having a structure in which a recess is formed on the back surface of the substrate by etching, and a wiring is connected between the terminals on the substrate by a diffusion resistor, wherein at least a predetermined position of the substrate is close to the etching stop layer. A deep hole having a depth greater than or equal to a depth is formed, and a conductive diffusion region is formed between any of the terminals and the hole, and a circumferential surface of the hole. 제4항에 있어서, 상기 구멍이 이방성에칭에 의해서 형성된 것인 반도체압력센서의 배선구조.The wiring structure of a semiconductor pressure sensor according to claim 4, wherein said hole is formed by anisotropic etching. 제1항 또는 제4항에 있어서, 상기 접속영역이 기판의 소정위치에 주입되는 도전형이온에 의해서 기판의 소정위치와 에칭정지층과의 사이에 형성되고, 상기 도전형의 확산영역이 기판의 소정위치와 어느것인가의 단자와의 사이에 형성된 것인 반도체압력센서의 배선구조.The method according to claim 1 or 4, wherein the connection region is formed between the predetermined position of the substrate and the etching stop layer by conductive ions implanted at a predetermined position of the substrate, and the diffusion type region of the substrate is formed. A wiring structure of a semiconductor pressure sensor, which is formed between a predetermined position and any terminal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870013931A 1986-12-08 1987-12-07 Wiring structure of semiconductor pressure sensor KR900008652B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP292082 1986-12-08
JP292083 1986-12-08
JP61292082A JPS63143872A (en) 1986-12-08 1986-12-08 Wiring structure of semiconductor pressure sensor
JP292084 1986-12-08

Publications (2)

Publication Number Publication Date
KR890011129A true KR890011129A (en) 1989-08-12
KR900008652B1 KR900008652B1 (en) 1990-11-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013931A KR900008652B1 (en) 1986-12-08 1987-12-07 Wiring structure of semiconductor pressure sensor

Country Status (2)

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JP (1) JPS63143872A (en)
KR (1) KR900008652B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292084A (en) * 1985-06-19 1986-12-22 Nec Corp Processing circuit for detection signal of magnetic sensor

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KR900008652B1 (en) 1990-11-26
JPS63143872A (en) 1988-06-16

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