KR890007151A - High Current Driver Using CMOS - Google Patents

High Current Driver Using CMOS Download PDF

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Publication number
KR890007151A
KR890007151A KR870012068A KR870012068A KR890007151A KR 890007151 A KR890007151 A KR 890007151A KR 870012068 A KR870012068 A KR 870012068A KR 870012068 A KR870012068 A KR 870012068A KR 890007151 A KR890007151 A KR 890007151A
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KR
South Korea
Prior art keywords
high current
current driver
gate
output
cmos
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Application number
KR870012068A
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Korean (ko)
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KR900002789B1 (en
Inventor
온용호
장동욱
장득수
Original Assignee
강진구
삼성반도체통신 주식회사
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Priority to KR1019870012068A priority Critical patent/KR900002789B1/en
Publication of KR890007151A publication Critical patent/KR890007151A/en
Application granted granted Critical
Publication of KR900002789B1 publication Critical patent/KR900002789B1/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음No content

Description

시모스를 이용한 고 전류 드라이버High Current Driver with CMOS

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 3 도는 본 발명에 따른 시모스를 이용한 고 전류 드라이버 회로도.3 is a high current driver circuit diagram using a CMOS according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31:지연부 32,33 : 스위칭부31: delay unit 32, 33: switching unit

G1-G3 : 전달게이트G1-G3: transfer gate

Claims (1)

입력펄스가 게이트에 인가되는 P 모오스트랜지스터와 N 모오트랜지스터로 구성된 시모오스인버터가 병렬접속된 지연부(31)와 전달게이트(G2)로 이루어진 고전류드라이버에 있어서, 상기 입력펄스를 지연시키는 전달게이트(G2)의 입력단에 상기 지연부(31)의 출력을 연결하고, 상기 전달게이트(G2)를 통해 지연된 출력펄스를 P 모오스와 N 모오스트랜지스터(M1,M2)의 게이트에 인가하며, 상기 트랜지스터(M1,M2)의 드레인을 스위칭부(32) 및 전달게이트(G3)의 입력단에 각각 연결하며, 스위칭부(32)의 출력을 지연부(31)의 출력에 연결하는 것을 특징으로 하는 시모오스를 이용한 고전류 드라이버.In a high current driver comprising a delay unit 31 and a transfer gate G 2 connected in parallel with a Simo inverter consisting of a P MOS transistor and an N MOS transistor in which an input pulse is applied to a gate, the transfer gate delaying the input pulse. connecting the output of the delay unit 31 to the input of the (G 2), and applying the delayed output pulse through the transmission gate (G 2) to the gate of the P Mohs and N Mohs transistors (M 1, M 2), and Connecting the drains of the transistors M 1 and M 2 to the input terminals of the switching unit 32 and the transfer gate G3, respectively, and connecting the output of the switching unit 32 to the output of the delay unit 31. High current driver using Simoose. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870012068A 1987-10-30 1987-10-30 High current driver of comos's using KR900002789B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870012068A KR900002789B1 (en) 1987-10-30 1987-10-30 High current driver of comos's using

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870012068A KR900002789B1 (en) 1987-10-30 1987-10-30 High current driver of comos's using

Publications (2)

Publication Number Publication Date
KR890007151A true KR890007151A (en) 1989-06-19
KR900002789B1 KR900002789B1 (en) 1990-04-30

Family

ID=19265576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012068A KR900002789B1 (en) 1987-10-30 1987-10-30 High current driver of comos's using

Country Status (1)

Country Link
KR (1) KR900002789B1 (en)

Also Published As

Publication number Publication date
KR900002789B1 (en) 1990-04-30

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