KR880014682A - Charge transfer device - Google Patents

Charge transfer device Download PDF

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Publication number
KR880014682A
KR880014682A KR1019880006031A KR880006031A KR880014682A KR 880014682 A KR880014682 A KR 880014682A KR 1019880006031 A KR1019880006031 A KR 1019880006031A KR 880006031 A KR880006031 A KR 880006031A KR 880014682 A KR880014682 A KR 880014682A
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KR
South Korea
Prior art keywords
drain region
voltage
charge transfer
charge
floating diffusion
Prior art date
Application number
KR1019880006031A
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Korean (ko)
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KR910006248B1 (en
Inventor
신이치 이마이
다츠야 요시에
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR880014682A publication Critical patent/KR880014682A/en
Application granted granted Critical
Publication of KR910006248B1 publication Critical patent/KR910006248B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음No content

Description

전하전송소자Charge transfer device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 1실시예의 주요부 구성을 도시해 놓은 회로도, 제2도는 상기 1실시예를 설명하기 위한 전위관계를 도시해 놓은 도면, 제3도는 상기 1실시예를 설명하기 위한 특성곡선도.1 is a circuit diagram showing the configuration of main parts of an embodiment according to the present invention, FIG. 2 is a diagram showing potential relationships for explaining the first embodiment, and FIG. 3 is a characteristic curve for explaining the first embodiment. Degree.

Claims (2)

반도체기판(45)상에 형성됨가 더불어 전하전송부(49)로부터의 신호전하가 전송되어지는 플로팅 확산 영역(50)과, 리셋트전압을 인가받아 불필요한 전하를 배출시켜 주는 드레인영역(52), 리셋트펄스에 따라서 상기 플로우팅 확산영역(50)이 축적전하를 상기 드레인영역(52)로 배출제어해 주는 리셋트 게이트 전극(53), 상기 플로우팅 확산영역(50)의 축적전하를 상기 드레인영역(52)에 공급해 주는 승압수단(20), 상기 전압 발생수단(10)으로부터의 출력전압과 상기 승압전압과의 차이에 대응되는 오차전압을 발생시키고 이 오차 전압에 근거해서 상기 승압수단(20)에서의 승압동작을 제어해 주는 비교 제어수단(30)을 구비해서 구성된 것을 특징으로 하는 전하전송소자.The floating diffusion region 50 is formed on the semiconductor substrate 45 and transfers the signal charges from the charge transfer section 49, and the drain region 52, which discharges unnecessary charge by applying a reset voltage. A reset gate electrode 53 for controlling the discharge of the accumulated diffusion into the drain region 52 according to a set pulse, and the drain region to store the accumulated charge of the floating diffusion region 50 in the drain region. The boosting means 20 supplied to the 52 and an error voltage corresponding to the difference between the output voltage from the voltage generating means 10 and the boosted voltage, and generating the error voltage based on the error voltage. And a comparison control means (30) for controlling the step-up operation in the electric charge transfer device. 제1항에 있어서, 상기 소정전위값(α)이 상기 플로우팅 확산영역(50)의 축적전하를 상기 드레인영역(52)으로 배출시킬 경우에 상기 리셋트 게이트전극(53)밑에 형성되는 전위와 상기 드레인영역(52)의 전위와의 차이에 상당하는 값으로 설정되어져 있는 것을 특정으로 하는 전하전송소자.2. The method of claim 1, wherein the predetermined potential value? And a potential formed under the reset gate electrode 53 when the accumulated charge of the floating diffusion region 50 is discharged to the drain region 52. A charge transfer element, characterized in that it is set to a value corresponding to a difference from the potential of the drain region (52). ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880006031A 1987-05-21 1988-05-21 Charge transfer device KR910006248B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12461187 1987-05-21
JP62-124611 1987-05-21

Publications (2)

Publication Number Publication Date
KR880014682A true KR880014682A (en) 1988-12-24
KR910006248B1 KR910006248B1 (en) 1991-08-17

Family

ID=14889713

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006031A KR910006248B1 (en) 1987-05-21 1988-05-21 Charge transfer device

Country Status (1)

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KR (1) KR910006248B1 (en)

Also Published As

Publication number Publication date
KR910006248B1 (en) 1991-08-17

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