KR880008439A - Multilayer Ceramics from Silicate Ester - Google Patents

Multilayer Ceramics from Silicate Ester Download PDF

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Publication number
KR880008439A
KR880008439A KR870013742A KR870013742A KR880008439A KR 880008439 A KR880008439 A KR 880008439A KR 870013742 A KR870013742 A KR 870013742A KR 870013742 A KR870013742 A KR 870013742A KR 880008439 A KR880008439 A KR 880008439A
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KR
South Korea
Prior art keywords
coating
ceramic
preceramic
hydrolyzed
silicon
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KR870013742A
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Korean (ko)
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KR950011560B1 (en
Inventor
앤드류 할루스카 로렌
윈튼 마이클 게이트
타레이 레오
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노르만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR880008439A publication Critical patent/KR880008439A/en
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Publication of KR950011560B1 publication Critical patent/KR950011560B1/en

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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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Abstract

내용 없음.No content.

Description

실리케이트 에스테르로부터의 다중층 세라믹Multilayer Ceramics from Silicate Ester

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Claims (33)

(1)(A) 가수분해되거나 부분적으로 가수분해된 실레게이트 에스테르를 용매로 희석시키고 가부분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 용액을 전자장치 상에 적용함으로써 전자장치에 평면화 피복물을 피복시키고; (B) 용매를 증발시켜 전자장치 상 프리세라믹(preceramic) 피복물을 부착시키기 위해, 가수분해 되거나 부분적으로 가수분해된 실릭케이트 에스테르 용액을 건조시킨 다음; (c) 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르를 공기중에서 또는 수증기 및 공기중에서 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 평면화 피복물을 형성시키고, (II)(i) 규소-함유피복물, (ii) 규소 탄소-함유 피복물, 및 (iii) 규소 탄소 질소-함유 피복물로 구성된 그룹 중에서 선택된 패시베이션화(passivating) 피복물을 세라믹 또는 세라믹-형 평면화 피복물에 적용시켜 (여기에서, 규소 질소-함유 피복물은 (a) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로풀리실란 또는 이의 혼합물의 화학적 증착, (b) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착, (c) 규소 및 질소-함유 프리세라믹 중합체의 세라믹화 중에서 선택된 방법으로 전자장치의 평면화 피복물 사에 적용하고; 규소 탄소 질소-함유 피복물은 (1) 헥사메틸렌디실라잔의 화학적 증착, (2) 헥사메틸렌 디실라잔의 플라스마 증진 화학적 증착, (3) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 도는 이외 혼합물의 화학적 증착, 및 (4) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착 중에서 선택된 방법으로 전자장치의 평면화 피복물상에 적용하며;규소 탄소-함유 피복물은 (i) C1내지 C6의 알칸 또는 알킬실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (ii) C1내지 C6의 알칸 또는 알킬 실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 도는 이의 혼합물의 플라스마 증진 화학적 증착 중에서 선택된 방법에 의해 부착시킨다) 패시베이션화 세라믹 또는 세라믹-형 피복물을 형성하고; (III)(i) 규소 피복물, (ii) 규소 질소-함유 피복물, (iii) 규소 탄소-함유 피복물, 및 (ⅳ) 규소 탄소 질소-함유 피복물로 구성된 그룹중에서 선택된 규소-함유 피복물을 페시베이션화 세라믹 또는 세라믹-형 피복물에 적용시켜 (여기에서 규소 피복물은 (a) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, (b) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착, 또는 (c) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 금속 보조 화학적 증착 중에서 선택된 방법에 의해 패시베이션화 피복물 상에 적용하고, 규소 탄소-함유 피복물은 (1) C1내지 C6의 알칸 또는 알킬실란의 존재하에 실란, 알킬실란 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (2) C1내지 C6의 알칼 또는 알킬 실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착 중에서 선택된 방법에 의해 적용하며;규소 질소-함유 피복물은 (A) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, (B) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착, (C) 규소 및 질소-함유 프리세라믹 중합체의 세라믹화 중에서 선택된 방법으로 부착시키고; 규소 탄소 질소-함유 피복물은 (i) 헥사메틸렌디실라잔의 화학적 증착, (ii) 헥사메틸렌디실라잔의 플라스마 증진 화학적 증착, (iii) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (iv) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착 중에서 선택된 방법으로 부착시킨다)규소-함유 피복물을 형성시킴으로써, 다중 층 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(1) (A) coating a planarizing coating on the electronics by diluting the hydrolyzed or partially hydrolyzed siliceate ester with a solvent and applying a partially or partially hydrolyzed dilution silicate ester solution onto the electronics; (B) drying the hydrolyzed or partially hydrolyzed silicate ester solution to evaporate the solvent to attach a preceramic coating on the electronics; (c) heating the coated device to a temperature of 200 to 1000 ° C. to hydrolyze or partially hydrolyzed silicate esters with ceramic dioxide in silicon or in water vapor and in air to form a ceramic or ceramic-type planarizing coating, A passivating coating selected from the group consisting of (II) (i) a silicon-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating is applied to a ceramic or ceramic-type planarizing coating. Whereby the silicon nitrogen-containing coating is (a) chemical vapor deposition of silane, halosilane, halodisilane, halopullysilane or mixtures thereof in the presence of ammonia, (b) silane, halosilane, halodi in the presence of ammonia During plasma enhanced chemical vapor deposition of silanes, halopolysilanes or mixtures thereof, (c) during the ceramicization of silicon and nitrogen-containing preceramic polymers The selected method is applied to the planarizing coating used in the electronic device; silicon carbon nitrogen-containing coating is (1) hexamethylene chemical vapor deposition of a silazane, 2-hexamethylene disilazane plasma enhancement chemical deposition, (3) C Chemical vapor deposition of silanes, alkylsilanes, halosilanes, halodisilanes, halopolysilanes or other mixtures in the presence of 1 to C 6 alkanes or alkylsilanes and further in the presence of ammonia, and (4) alkanes of C 1 to C 6 Or on the planarizing coating of the electronic device by a method selected from chemical vapor deposition of silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of alkylsilane and further in the presence of ammonia; The coating may comprise (i) chemical vapor deposition of silanes, alkylsilanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof in the presence of C 1 to C 6 alkanes or alkylsilanes, and (ii) Silane, alkylsilane, halosilane, halodisilane, halopolysilane or in the presence of an alkane or alkyl silane of C 1 to C 6 or attached by a method selected from plasma enhanced chemical vapor deposition of a mixture thereof). Forming a mold coating; Passivating a silicon-containing coating selected from the group consisting of (III) (i) a silicon coating, (ii) a silicon nitrogen-containing coating, (iii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating Applied to a ceramic or ceramic-type coating, wherein the silicon coating is (a) chemical vapor deposition of silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) silane, halosilane, halodisilane, halo Plasma-enhanced chemical vapor deposition of polysilanes or mixtures thereof, or (c) metal assisted chemical vapor deposition of silanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof, applied onto the passivation coating, and The containing coating comprises (1) chemical vapor deposition of silane, alkylsilane halosilane, halodisilane, halopolysilane, or mixtures thereof in the presence of an alkane or alkylsilane of C 1 to C 6 , and (2) C The nitrogen nitrogen-containing coating is applied by a method selected from plasma enhanced chemical vapor deposition of silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of 1 to C 6 alkal or alkyl silane; A) chemical vapor deposition of silanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of silanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof in the presence of ammonia (C) silicon and nitrogen-containing preceramic polymers, and the silicon carbon nitrogen-containing coating is attached by (i) chemical vapor deposition of hexamethylenedisilazane, (ii) hexamethylenedisilazane Plasma enhanced chemical vapor deposition, (iii) silane, alkylsilane, halosilane, halo in the presence of alkane or alkylsilane of C 1 to C 6 and further in the presence of ammonia Chemical vapor deposition of disilanes, halopolysilanes or mixtures thereof, and (iv) silanes, alkylsilanes, halosilanes, halodisilanes, halopolysilanes in the presence of alkanes or alkylsilanes of C 1 to C 6 and further in the presence of ammonia. Or chemical vapor deposition of the mixture thereof) by forming a silicon-containing coating, thereby forming a multilayer ceramic or ceramic-type coating on the electronic device. (I)(A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르를 용매로 희석시키고 가부분해되거나 부분적으로 가수분해 및 희석 실리케이트 에스테르 용액을 전자장치 상에 적용시킴으로써 전자장치에 평면화 피복물을 피복시키고; (B) 용매를 증발시켜 전자장치 사에 프리세라믹 피복물을 부착시키고 위해 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 용액을 건조시킨 다음; (C) 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르를 공기중에서, 또는 수증기 및 공기 중에서 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 평면화 피복물을 형성시키고; (II)(i) 규소-함유 피복물, (ii) 규소 질소-함유 피복물, 및 (iii) 규소 탄소 함유 피복물, 및 (iv) 규소 탄소 질소-함유 피복물로 구성된 그룹중에서 선택된 패시베이션화 피복물을 세라믹 또는 세라믹-형 평면화 피복물에 적용시켜 (여기에서, 규소 피복물은 (a) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, (b) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착, 또는 (c) 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 금속 보조 화학적 증착중에서 선택된 방법에 의해 패시베이션화 피복물 상에 적용하고, 규소 질소-함유 피복물은 (a) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, (b) 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착, (c) 규소 및 질소-함유 프리세라믹 중합체의 세라믹화중에서 선택된 방법으로 전자장치의 평면화 피복물 상에 적용하고; 규소 탄소 질소-함유 피복물은 (1) 헥사메틸렌디실라잔의 화학적 증착, (2) 헥사메틸렌디실라잔의 플라스마 증진 화학적 증착, (3) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (4) C1내지 C6의 알칸 또는 알킬실란 존재하 및 추가로 암모니아 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착 중에서 선택된 방법으로 전자장치의 평면화 피복물 상에 적용하며; 규소 탄소-함유 피복물은 (i) C1내지 C6의 알칸 또는 알킬실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 홀로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (i) C1내지 C6의 알칸 또는 알킬 실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착, 및 (ⅱ) C1내지 C6의 의 알칸 또는 알킬 실란의 존재하에 실란, 알킬실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착 중에서 선택된 방법에 의해 부착시킨다)팬시베이션화 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 이중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(I) (A) coating the planarizing coating on the electronics by diluting the hydrolyzed or partially hydrolyzed silicate ester with a solvent and applying a partially or partially hydrolyzed and diluted silicate ester solution onto the electronics; (B) evaporating the solvent to attach the preceramic coating to the electronics and to dry the hydrolyzed or partially hydrolyzed silicate ester solution for; (C) heating the coated device to a temperature of 200 to 1000 ° C. to hydrolyze or partially hydrolyzed silicate esters with ceramics in silicon, in air or in water vapor and air to form ceramic or ceramic-type planarizing coatings; ; The passivation coating selected from the group consisting of (II) (i) a silicon-containing coating, (ii) a silicon nitrogen-containing coating, and (iii) a silicon carbon-containing coating, and (iv) a silicon carbon nitrogen-containing coating, may be selected from ceramic or Applied to a ceramic-type planarizing coating, wherein the silicon coating is (a) chemical vapor deposition of silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) silane, halosilane, halodisilane, halo Plasma-enhanced chemical vapor deposition of polysilanes or mixtures thereof, or (c) metal assisted chemical vapor deposition of silanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof, applied onto the passivation coating, and The coating containing (a) chemical vapor deposition of silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) silane, halosilane in the presence of ammonia, Plasma-enhanced chemical vapor deposition of Rhodisilane, halopolysilane, or mixtures thereof, and (c) applying onto the planarizing coating of the electronic device by a method selected from ceramicization of silicon and nitrogen-containing preceramic polymers; (1) chemical vapor deposition of hexamethylenedisilazane, (2) plasma enhanced chemical vapor deposition of hexamethylenedisilazane, (3) silane, alkyl in the presence of alkanes or alkylsilanes of C 1 to C 6 and further in the presence of ammonia Chemical vapor deposition of silanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof, and (4) silanes, alkylsilanes, halosilanes, halo in the presence of alkane or alkylsilanes of C 1 to C 6 and further in the presence of ammonia. disilane, halo poly flattened applied onto the coating of the electronic device and a method chosen from the chemical vapor deposition of a silane, or a mixture thereof; silicon carbon-containing coating is (i) C 1 in Silane in the presence of a C 6 alkane or alkyl silane, alkylsilane, halosilane, halo disilane, alone polysilane, or chemical vapor deposition of a mixture thereof, and (i) C 1 to silane in the presence of an alkane or alkyl silane of C 6 , Chemical vapor deposition of alkylsilanes, halosilanes, halodisilanes, halopolysilanes or mixtures thereof, and (ii) silanes, alkylsilanes, halosilanes, halodisilanes in the presence of C 1 to C 6 alkanes or alkyl silanes. And a plasma enhanced chemical vapor deposition of halopolysilane or mixtures thereof). A method of forming a bilayer, ceramic or ceramic-like coating on an electronic device by forming a passivated ceramic or ceramic-like coating. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하며 가수분해되거나 부분적으로 갓분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고 (B) 약 200 내지 1000℃온도에서, 세라믹 또는 세라믹-형 피복된 장치 존재하에 증기상인 실란, 할로실란, 할로디실란, 할로폴리실옥산 또는 이의 혼합물 및 암모니아를 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복된 장치에 규소-함유 피복물을 적용시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. Coating the coating on an electronic device by ceramicizing the hydrolyzed or partially freshly silicated ester preceramic coating with silicon dioxide to form a ceramic or ceramic-like coating, and (B) at a temperature of about 200 to 1000 ° C., three The vapor phase silane, halosilane, halodisilane, halopolysiloxane or mixtures thereof and ammonia in the presence of a mixed-type coated device are decomposed in a reaction vessel to apply a silicon-containing coating to a ceramic or ceramic-type coated device. A method of forming a multilayer, ceramic or ceramic-type coating on an electronic device, to obtain an electronic device comprising a multilayer, ceramic or ceramic-type coating. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) 약 200 내지 1000℃ 온도에서, 세라믹 또는 세라믹-형 피복된 장치 존재하에 증기상인 실란, 할로실란, 할로디실란, 할로폴리실옥산 또는 이의 혼합물 및 암모니아를 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복된 장치에 규소 질소-함유피복물을 적용시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating to ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronic device, and (B) at a temperature of about 200 to 1000 ° C., or Vapor phase silane, halosilane, halodisilane, halopolysiloxane or mixtures thereof and ammonia in the presence of a ceramic-type coated device are decomposed in a reaction vessel to apply a silicon nitrogen-containing coating to the ceramic or ceramic-type coated device. Thereby forming a multilayer, ceramic or ceramic-type coating on the electronic device, thereby obtaining an electronic device comprising the multilayer, ceramic or ceramic-type coating. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) 약 200 내지 1000℃ 온도에서, 세라믹 또는 세라믹-형 피복된 장치 존재하에 증기상인 실란, 할로실란, 할로디실란, 할로폴리실옥산 또는 이의 혼합물 및 C1내지 C6의 알칸 또는 알킬실란을 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소-함유 피복물을 적용시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치의 수득하는, 다중 층 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution with an electronic device, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating to ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronic device, and (B) at a temperature of about 200 to 1000 ° C., or Vapor phase silanes, halosilanes, halodisilanes, halopolysiloxanes or mixtures thereof, and C 1 to C 6 alkanes or alkylsilanes in the presence of a ceramic-type coated device are decomposed in the reaction vessel to form a ceramic or ceramic-type coated A method of forming a multilayer ceramic-like coating on an electronic device, by applying a silicon carbon-containing coating to the device, thereby obtaining an electronic device comprising the multilayer, ceramic or ceramic-like coating. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) 200 내지 1000℃ 온도에서, 세라믹 또는 세라믹-형 피복된 장치 존재하에 증기상인 헥사메틸실라잔을 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소 질소-함유 피복물을 피복시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치의 수득하는, 다중 층 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution with an electronic device, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. Coating the coating on an electronic device by ceramicizing the hydrolyzed or partially hydrolyzed silicate ester preceramic coating with silicon dioxide to form a ceramic or ceramic-type coating, and (B) at a temperature between 200 and 1000 ° C., three A multi-layered, ceramic or ceramic-type coating is included by decomposing vapor hexamethylsilazane in a reaction vessel in the presence of a ramic-type coated device to coat a silicon carbon nitrogen-containing coating on a ceramic or ceramic-type coated device. A method of forming a multilayer ceramic-like coating on an electronic device, the resulting electronic device comprising: (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 고음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) C1내지 C6의 알칸 및 알킬실란의 존재하에 및 추가의 암모니아 존재하에 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 화학적 증착에 의해 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소 질소-함유 피복물을 적용하여 규소-함유 피복물을 형성시킴으로써 다중 층-세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution with an electronic device, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilution silicate ester preceramic material solution to attach a partially or partially hydrolyzed silicate ester preceramic coating to be hydrolyzed by heating to a temperature of 200 to 1000 ° C. The partially hydrolyzed silicate ester preceramic coating is ceramicized with silicon dioxide to form a ceramic or ceramic-type coating to coat the coating on the electronic device, and (B) in the presence of alkanes and alkylsilanes of C 1 to C 6 And additional Multiplexing by forming a silicon-containing coating by applying a silicon carbon nitrogen-containing coating to a ceramic or ceramic-type coated device by chemical vapor deposition of silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of monia A method of forming a layer-ceramic or ceramic-like coating on an electronic device. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석실리케이트 에스테르 프리세라믹 물질 용액을 건조시키고, 피복된 장치를 200 내지 1000℃ 온도까지 가열시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) C1내지 C6의 알칸 및 알킬실란의 존재하에 및 추가의 암모니아 존재하에 세라믹 또는 세라믹-형 피복된 장치 존재하에 증기 상인 실란, 할로실란, 할로디실란, 할로폴리실란 또는 이의 혼합물의 플라스마 증진 화학적 증착에 의해 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소 질소-함유 피복물을 적용하여 규소-함유 피복물을 형성시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 전자 장치상에 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach a partially or partially hydrolyzed silicate ester preceramic coating, and the coated device is heated to a temperature of 200 to 1000 ° C. to hydrolyze or partially Coating the coating on an electronic device by ceramicizing the hydrolyzed silicate ester preceramic coating with silicon dioxide to form a ceramic or ceramic-type coating, (B) in the presence of alkanes and alkylsilanes of C 1 to C 6 , and Additional ammo Silicon carbon nitrogen-laden on ceramic or ceramic-type coated devices by plasma enhanced chemical vapor deposition of silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the vapor phase in the presence of ceramic or ceramic-type coated devices in the presence of nia. A method of forming a multilayer, ceramic or ceramic-like coating on an electronic device by applying a containing coating to form a silicon-containing coating. 제1항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 1. 제2항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 2. 제3항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 3. 제4항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 4. 제5항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 5. 제6항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 6. 제7항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 7. 제8항의 방법에 의해 형성된 피복물.A coating formed by the method of claim 8. 제1항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 1. 제2항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 2. 제3항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 3. 제4항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 4. 제5항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 5. 제6항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 6. 제7항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 7. 제8항의 방법에 의해 피복된 전자장치.An electronic device coated by the method of claim 8. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시킨다음, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자 장치에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시키고, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복무를 부착시키기 위해 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 팬시베이션화 피복물을 적용하고, (C) 200 내지 600℃ 온도에서 세라믹 또는 세라믹-형 피복 장치 존재하에 증기상인 실란, 할로실란, 할로디실란 또는 할로폴리실란 또는 이의 혼합물을 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복장치에 규소-함유 피복물을 적용시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자 장치상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution with an electronic device, and then evaporate the solvent to To attach the decomposed or partially hydrolyzed silicate ester preceramic coating to the electronic device, the hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution was dried and the coated device was heated to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating is ceramicized with silicon dioxide to form a ceramic or ceramic-type coating to coat the coating on the electronics, and (B) the preceramic silicon nitrogen-containing polymer is solvent Dilute and coat the ceramic or ceramic-type cladding device with the diluted preceramic silicon nitrogen-containing polymer in solution, and then evaporate the solvent to attach the preceramic silicon nitrogen-containing cladding on the ceramic or ceramic-type cladding electronics. The ceramic or ceramic-type silicon nitrogen-containing polymer solution by drying the preceramic silicon nitrogen-containing polymer solution and heating the coated device to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating. Applying a passivated coating comprising silicon nitrogen-containing material to the type coater and (C) a silane, halosilane, halodisilane or halo in the vapor phase in the presence of a ceramic or ceramic-type coater at a temperature between 200 and 600 ° C. Ceramic or ceramic-type coating apparatus by decomposing polysilane or mixtures thereof in a reaction vessel A method of forming a multilayer, ceramic, or ceramic-type coating on an electronic device, by applying a silicon-containing coating to it, to obtain an electronic device comprising the multilayer, ceramic, or ceramic-type coating. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 플리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃ 온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화규소 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복무를 부착시키기 위해 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 팬시베이션화 피복물을 적용하고, (C) 200 내지 1000℃ 온도에서 세라믹 또는 세라믹-형 피복 장치 존재하에 증기상인 실란, 할로실란, 할로디실란 또는 할로폴리실란 또는 이의 혼합물, 및 암모니아를 반응 용기에서 분해시켜 세라믹 또는 세라믹-형 피복장치에 규소질소-함유 피복물을 피복시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자 장치상에 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester polyceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating to form a ceramic or ceramic-type coating by silicon dioxide ceramic coating to coat the coating on the electronic device, and (B) the preceramic silicon nitrogen-containing polymer Dilute the ceramic or ceramic-type coating device with a diluted preceramic silicon nitrogen-containing polymer with a solution, and then evaporate the solvent to deposit the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics. Ceramic or ceramic by drying the preceramic silicon nitrogen-containing polymer solution for adhesion and heating the coated device to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating -Apply a passivated coating comprising silicon nitrogen-containing material to the type coater, and (C) a silane, halosilane, halodisilane or vapor phase in the presence of a ceramic or ceramic-type coater at a temperature between 200 and 1000 ° C or Halopolysilane or mixtures thereof, and ammonia are decomposed in the reaction vessel to A method of forming a multi-layer, ceramic or ceramic-type coating on an electronic device, by coating the silicon-containing coating on the mix-type coating device to obtain an electronic device comprising the multilayer, ceramic or ceramic-type coating. . (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물를 부착시키기 위해 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 팬시베이션화 피복물을 적용하고, (C) 200 내지 1000℃ 온도에서 세라믹 또는 세라믹-형 피복 장치 존재하에 증기상인 실란, 할로실란, 할로디실란 또는 할로폴리실란 또는 이의 혼합물, 및 C1내지 C6알칸 또는 알킬실란을 반응용기에서 분해시켜 세라믹 또는 세라믹-형 피복장치에 규소 탄소-함유 피복물을 피복시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronic device, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating by ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronic device, and (B) using a preceramic silicon nitrogen-containing polymer Dilute the medium, and coat the ceramic or ceramic-type coating with the diluted preceramic silicon nitrogen-containing polymer in solution, and then evaporate the solvent to attach the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics. The ceramic or ceramic-type silicon nitrogen-containing polymer solution by drying the preceramic silicon nitrogen-containing polymer solution and heating the coated device to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating. Applying a passivated coating comprising silicon nitrogen-containing material to the type coater, and (C) a silane, halosilane, halodisilane or halo in the vapor phase in the presence of a ceramic or ceramic-type coater at a temperature between 200 and 1000 ° C. polysilane or a mixture thereof, and C 1 to C 6 min alkane or alkyl silane in the reaction vessel By coating a coating containing a multilayer, ceramic or ceramic-to ceramic or ceramic-like silicon carbon coating on the device a method of forming a coating type - to obtain a type electronic device comprising a coating, a multilayer, ceramic or ceramic. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물를 부착시키기 위해희석된 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 패시베이션화 피복물을 적용하고, (C) 세라믹 또는 세라믹-형 피복장치 존재하에 헥사메틸디실라잔의 화학적 증착에 의해 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소 질소-함유 피복물을 적용시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치에 형성시키는 방법.(A) diluting the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coating the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution on an electronic device and evaporating the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronics, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating to ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronics, and (B) preceramic silicon nitrogen-containing polymer Diluting and coating the ceramic or ceramic-type coating with a solution of the diluted preceramic silicon nitrogen-containing polymer and then evaporating the solvent to attach the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics. Ceramic or ceramic by drying the dilute preceramic silicon nitrogen-containing polymer solution and heating the coated device to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating Applying a passivation coating comprising silicon nitrogen-containing material to the -type coating device, and (C) a ceramic or ceramic-type coating device by chemical vapor deposition of hexamethyldisilazane in the presence of a ceramic or ceramic-type coating device. By applying a silicon carbon nitrogen-containing coating to a multilayer, ceramic or aged Dynamic-type coating method for forming the electronic device-type to obtain an electronic device comprising a coating, a multilayer, ceramic or ceramic. (A) 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물를 부착시키기 위해 희석된 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 패시베이션화 피복물을 적용하고, (C) 200 내지 1000℃ 온도에서 세라믹 또는 세라믹-형 피복된 장치 존재하에 헥사메틸디실라잔의 플라스마 증진 화학적 증착에 의해 세라믹 또는 세라믹-형 피복된 장치에 규소 탄소 질소-함유 피복물을 적용시킴으로써 다중 층, 세라믹 또는 세라믹-형 피복물을 포함하는 전자장치를 수득하는, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution with an electronic device, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronic device, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating by ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronic device, and (B) using a preceramic silicon nitrogen-containing polymer Dilute the medium, and coat the ceramic or ceramic-type coating with the diluted preceramic silicon nitrogen-containing polymer in solution, and then evaporate the solvent to attach the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics. The ceramic or ceramic-type silicon nitrogen-containing coating by drying the diluted preceramic silicon nitrogen-containing polymer solution and heating the coated apparatus to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating. Applying a passivation coating comprising silicon nitrogen-containing material to a ceramic-type coating device, and (C) plasma-enhanced chemical vapor deposition of hexamethyldisilazane in the presence of a ceramic or ceramic-type coated device at a temperature of 200 to 1000 ° C. Silicon-carbon nitrogen-containing sheaths on ceramic or ceramic-type sheathed devices by By applying a multilayer, ceramic or ceramic-type coating method for the formation in the electronic device to obtain an electronic device comprising a coating-type, multi-layer, ceramic or ceramic. (A)가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해 되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물를 부착시키기 위해 희석된 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소 질소-함유 물질을 포함하는 패시베이션화 피복물을 적용하고, (C) C1내지 C6알칸 또는 알킬실란 존재하에 및 추가의 암모니아 존재하에, 실란, 할로실란, 할로디실란, 또는 할로폴리실란 또는 이의 혼합물의 화확적 증착에 의해 세라믹 또는 세라믹-형 피복장치에 규소 탄소 질소-함유 피복물을 적용시켜 규소 탄소 질소-함유 피복물을 형성시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution to the electronics, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach a partially or partially hydrolyzed silicate ester preceramic coating, and then the coated device is hydrolyzed by heating to a temperature of 200 to 1000 ° C. The partially hydrolyzed silicate ester preceramic coating is ceramicized with silicon dioxide to form a ceramic or ceramic-type coating to coat the coating on the electronic device, and (B) the preceramic silicon nitrogen-containing polymer is diluted with a solvent. , Ceramic or ceramic-type coating device is coated with a diluted preceramic silicon nitrogen-containing polymer as a solution, and then diluted to attach the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics by evaporating the solvent. The pre-ceramic silicon nitrogen-containing polymer solution and heat the coated device to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating. Applying a passivation coating comprising a silicon nitrogen-containing material to the coating apparatus, and (C) silane, halosilane, halodisilane, or halo in the presence of C 1 to C 6 alkanes or alkylsilanes and in the presence of additional ammonia. Silicon carbon in ceramic or ceramic-type sheathing devices by chemical vapor deposition of polysilane or mixtures thereof By forming a coating containing, multilayer, ceramic or ceramic-containing coating by applying a silicon carbon nitrogen-nitrogen method of forming a shaped coating on an electronic device. (A)가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치에 피복시키고, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시킨 다음, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 이산화 규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 프리세라믹 규소 질소-함유 중합체를 용매로 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물를 부착시키기 위해 희석된 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기에서 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 세라믹 또는 세라믹-형 규소 질소-함유 피복물을 형성시킴으로써 세라믹 또는 세라믹-형 피복장치에 규소질소-함유 물질을 포함하는 패시베이션화 피복물을 적용하고, (C) C1내지 C6의 알칸 또는 알킬실란 존재하에 및 추가의 암모니아 존재하에, 실란, 알킬실란, 할로실란, 할로디실란, 또는 할로폴리실란 또는 이의 혼합물의 플라스마-증진 화확적 증착에 의해 세라믹 또는 세라믹-형 피복장치에 규소 탄소-함유 피복물을 적용시켜 규소 탄소 질소-함유 피복물을 형성시킴으로써, 다중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.(A) dilute the hydrolyzed or partially hydrolyzed silicate ester preceramic material with a solvent, coat the hydrolyzed or partially hydrolyzed silicate ester preceramic material solution to the electronics, and evaporate the solvent to hydrolyze The hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution to attach the partially or partially hydrolyzed silicate ester preceramic coating onto the electronic device, and then heated the coated device to a temperature of 200 to 1000 ° C. The hydrolyzed or partially hydrolyzed silicate ester preceramic coating by ceramics with silicon dioxide to form a ceramic or ceramic-like coating, thereby coating the coating on the electronic device, and (B) using a preceramic silicon nitrogen-containing polymer Dilute the ceramic or ceramic-type coating with a diluted preceramic silicon nitrogen-containing polymer with a solution, and then evaporate the solvent to attach the preceramic silicon nitrogen-containing coating on the ceramic or ceramic-type coating electronics. The ceramic or ceramic-type silicon nitrogen-containing coating by drying the diluted preceramic silicon nitrogen-containing polymer solution and heating the coated apparatus to a temperature of 200 to 1000 ° C. in an inert or ammonia-containing atmosphere to form a ceramic or ceramic-type silicon nitrogen-containing coating. Applying a passivation coating comprising a silicon-containing material to the ceramic-type coating device, and (C) silane, alkylsilane, halosilane in the presence of alkane or alkylsilane of C 1 to C 6 and in the presence of further ammonia By plasma-enhanced chemical vapor deposition of halodisilanes, or halopolysilanes or mixtures thereof A method of forming a multilayer, ceramic or ceramic-like coating on an electronic device by applying a silicon carbon-containing coating to a ramic or ceramic-type coating to form a silicon carbon nitrogen-containing coating. 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 물질을 용매로 희석시키고, 상기 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 전자장치로 피복시킨다음, 용매를 증발시켜 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 전자 장치 상에 부착시키기 위해 가수분해되거나 부분적으로 가수분해된 희석 실리케이트 에스테르 프리세라믹 물질 용액을 건조시키고, 피복된 장치를 200 내지 1000℃온도까지 가열하여 가수분해되거나 부분적으로 가수분해된 실리케이트 에스테르 프리세라믹 피복물을 공기중에서, 또는 수증기 및 공기중에서 이산화규소로 세라믹화시켜 세라믹 또는 세라믹-형 피복물을 형성시킴으로써 전자 장치에 피복물을 피복하고, (B) 용매로 프리세라믹 규소 질소-함유 중합체를 희석시키고, 세라믹 또는 세라믹-형 피복장치를 희석된 프리세라믹 규소 질소-함유 중합체를 용액으로 피복시킨 다음, 용매를 증발시켜 세라믹 또는 세라믹-형 피복 전자장치 상에 프리세라믹 규소 질소-함유 피복물을 부착시키기 위해 희석된 프리세라믹 규소 질소-함유 중합체 용액을 건조시키고, 불활성 또는 암모니아-함유 대기하에 200 내지 1000℃ 온도까지 피복된 장치를 가열하여 패시베이션화 규소 질소-함유 피복물을 형성시킴으로써 형성된 규소 질소-함유 물질을 포함하는 패시베이션화 피복물을 세라믹 또는 세라믹-형 피복된 장치에 적용시킴으로써 이중 층, 세라믹 또는 세라믹-형 피복물을 전자장치 상에 형성시키는 방법.The hydrolyzed or partially hydrolyzed silicate ester preceramic material is diluted with a solvent, and the hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution is coated with an electronic device and then the solvent is evaporated to hydrolyze or To attach the partially hydrolyzed silicate ester preceramic coating onto the electronic device, the hydrolyzed or partially hydrolyzed dilute silicate ester preceramic material solution is dried, and the coated device is heated to a temperature of 200 to 1000 ° C. Coating the coating on an electronic device by ceramically decomposing or partially hydrolyzed silicate ester preceramic coating in air, or with water vapor and air with silicon dioxide to form a ceramic or ceramic-like coating, ( B) Diluting the preceramic silicon nitrogen-containing polymer with a solvent, coating the ceramic or ceramic-type coating device with the diluted preceramic silicon nitrogen-containing polymer with a solution, and then evaporating the solvent to evaporate the ceramic or ceramic-type coating electrons. Silicon film is passivated by drying the diluted preceramic silicon nitrogen-containing polymer solution to attach the preceramic silicon nitrogen-containing coating on the device and heating the coated device to a temperature of 200 to 1000 ° C. under an inert or ammonia-containing atmosphere. A method of forming a double layer, ceramic or ceramic-like coating on an electronic device by applying a passivation coating comprising a silicon nitrogen-containing material formed by forming a nitrogen-containing coating to a ceramic or ceramic-type coated device. 세라믹 또는 세라믹-형 규소 질소-함유 물질로 기판을 피복시키는 방법에 있어서, (1) 환식 실라잔 또는 환식 실라진의 혼합물을 할로디실란 및 할로실란으로 구성된 그룹으로 부터 선택된 규소-함유 물질과 반응시킴으로써 제조된 규소 및 질소-함유 프리세라믹 중합체를 용매로 희석시키고; (2) 희석된 프리세라믹 중합체 용매액을 기판에 피복시킨 다음;(3) 용매를 증발시켜 시판상에 프리세라믹 중합체 피복물을 부착시키기 위해 공기 부재하에, 희석된 프리세라믹 중합체 용매 용액을 건조시키고;(4) 공기 부재하에, 피복된 기판을 가열시켜 세라믹 또는 세라믹-형 피복된 기판을 형성시키는 단계들을 포함하는 방법.A method of coating a substrate with a ceramic or ceramic-type silicon nitrogen-containing material, comprising: (1) reacting a cyclic silazane or a mixture of cyclic silazines with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes Diluting the silicon and nitrogen-containing preceramic polymer prepared with a solvent; (2) coating the diluted preceramic polymer solvent solution onto the substrate; (3) drying the diluted preceramic polymer solvent solution in the absence of air to evaporate the solvent to attach the preceramic polymer coating on the market; (4) heating the coated substrate in the absence of air to form a ceramic or ceramic-type coated substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870013742A 1986-12-04 1987-12-03 Multi-layer ceramics from silicate esters KR950011560B1 (en)

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