Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자학, 주식회사 금성사filedCritical구자학
Priority to KR860009050ApriorityCriticalpatent/KR880005664A/en
Publication of KR880005664ApublicationCriticalpatent/KR880005664A/en
Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions
(AREA)
Abstract
내용 없음No content
Description
1차 및 2차 금속층 형성방법Primary and secondary metal layer formation method
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도의 (가)-(다)는 본 발명의 방법에 의하여 1차 및 2차 금속층을 형성하는 공정을 보인 단면도.(A)-(c) of FIG. 2 is a cross-sectional view showing the process of forming the primary and secondary metal layers by the method of the present invention.
Claims (1)
Si 기판(11)에 형성한 SiO2층(12)에 Al층(13)을 형성하고, 그 Al층(13)보다 약 30%정도 크게 Ti층(14)을 형성한 후 약 400℃의 온도로 SiO2층(15)을 증착하여 사진식각하고, Ti층(16) 및 pt층(17), Au층(18)을 형성함을 특징으로 하는 1차 및 2차 금속층 형성방법.An Al layer 13 was formed on the SiO 2 layer 12 formed on the Si substrate 11, and the Ti layer 14 was formed about 30% larger than the Al layer 13, and then the temperature was about 400 ° C. Forming a Ti layer (16), a pt layer (17), and an Au layer (18) by depositing a SiO 2 layer (15).※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR860009050A1986-10-281986-10-28
Primary and secondary metal layer formation method
KR880005664A
(en)