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Priority to KR1019860006479ApriorityCriticalpatent/KR880002940A/en
Publication of KR880002940ApublicationCriticalpatent/KR880002940A/en
Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices
(AREA)
Abstract
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반도체 봉지용 에폭시수지 조성물Epoxy Resin Composition for Semiconductor Encapsulation
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (3)
노볼락형 에폭시수지, 페놀수지계 경화제에 시아눌산 멜라민, 실리카 알루미나로 구성되는 3성분계 복합충진재를 배합하는 것을 특징으로 하는 반도체 봉지용 에폭시 수지 조성물.An epoxy resin composition for semiconductor encapsulation, comprising a three-component composite filler composed of cyanuric acid melamine and silica alumina to a novolak type epoxy resin and a phenol resin curing agent.제 1항에 있어서, 3성분계 복합충진재의 조성비가 시아눌산 멜라민이 15-30 중량부이고, 실리카 45-75중량부이며, 알루미나가 10-25중량부인 반도체 봉지용 에폭시수지 조성물로서 각 성분의 입자크기가 시아눌산멜라민이 45μ-145μ 범위의 것이 85중량% 이상이고, 실리카가 75μ이하인 것이 65% 이상이고, 알루미나가 3μ-45μ의 것이 75중량% 이상인 조성물.The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the composition ratio of the three-component composite filler is 15-30 parts by weight of melamine cyanurate, 45-75 parts by weight of silica, and 10-25 parts by weight of alumina. A composition having melamine cyanurate in the range of 45 μ-145 μ in size of at least 85% by weight, silica having 75 μL or less in at least 65% and alumina having 3 μ-45 μ in at least 75% by weight.제1항에 있어서, 노볼락형 에폭시수지가 에폭시 당량 250이하이고, 연화점이 50℃-130℃범위인 반도체 봉지용 에폭시 수지 조성물.The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the novolac epoxy resin has an epoxy equivalent of 250 or less and a softening point of 50 ° C to 130 ° C.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860006479A1986-08-061986-08-06
Epoxy Resin Composition for Semiconductor Encapsulation
KR880002940A
(en)