KR830000439B1 - Sintered Body of Semiconductor Ceramic Material - Google Patents
Sintered Body of Semiconductor Ceramic Material Download PDFInfo
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- KR830000439B1 KR830000439B1 KR1019790000760A KR790000760A KR830000439B1 KR 830000439 B1 KR830000439 B1 KR 830000439B1 KR 1019790000760 A KR1019790000760 A KR 1019790000760A KR 790000760 A KR790000760 A KR 790000760A KR 830000439 B1 KR830000439 B1 KR 830000439B1
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- ceramic material
- sintered body
- semiconductor ceramic
- oxide
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- 239000004065 semiconductor Substances 0.000 title claims description 19
- 229910010293 ceramic material Inorganic materials 0.000 title claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000010955 niobium Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 16
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 229910000416 bismuth oxide Inorganic materials 0.000 description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 150000003438 strontium compounds Chemical class 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
내용 없음.No content.
Description
본 발명은 니오븀 또는 탄탈륨을 도우프(dope)한 티타산스트론튬을 주성분으로 하고 입자경계부에 전기 절연층을 형성시킨 반도체 세라믹의 소결체에 관한 것이다. 그러한 소결체는 소위 장벽층 콘덴서의 제조에 사용된다.The present invention relates to a sintered body of semiconductor ceramic in which strontium titanate doped with niobium or tantalum is a main component and an electrical insulation layer is formed in the grain boundary. Such sintered bodies are used for the production of so-called barrier layer capacitors.
미국 특허 제3,933,668호의 명세서에는 니오븀 또는 탄탈륨을 도우프하며, 또한 산화게르마늄 또는 산화아연을 함유시킨 티탄산 스트론튬을 주성분으로 하여 산화 비스무스 또는 산화납, 산화붕소 및 산화비스무스의 혼합물을 소결하고 도우프한 티탄산 스트론튬 내로 확산시키므로써 절연층을 형성한 반도체 세라믹 재료가 서술되고 있다. 산하 게르마늄은 입자경계부에 위치하여 입자직경을 증가시키는 경향을 가진다. 이 미국 특허 명세서에서는 재료의 실효 유전율의 증가는 입자직경이 종래의 반도체 티탄산 스트론튬보다 증가하는 것에의 한다고 한다. 실제로 입자의 크기는 광범위하게 변동하고 있는 것 같이 생각된다.US Pat. No. 3,933,668 discloses titanic acid sintered and doped with bismuth oxide or a mixture of lead oxide, boron oxide and bismuth oxide based on strontium titanate doped with niobium or tantalum and also containing germanium oxide or zinc oxide A semiconductor ceramic material is described in which an insulating layer is formed by diffusing into strontium. Germanium has a tendency to be located in the particle boundary to increase the particle diameter. In this US patent specification, the increase in the effective dielectric constant of the material is due to the increase in particle diameter than that of conventional semiconductor strontium titanate. In fact, the particle size seems to vary widely.
본 발명의 목적은 니오븀 또는 탄탈륨을 도우프한 티탄산 스트론튬을 주성분으로 하고 산하 게르마늄 또는 산화아연을 사용치않고 온도의 존성이 작은 유전율, 넓은 스펙트럼의 실효유전율, 작은 손실인자(tan δ) 및 큰 절연저항을 가지는 반도체 세라믹 재료의 소결체를 얻기 위한 것이다.An object of the present invention is based on strontium titanate doped with niobium or tantalum, and has a low dielectric constant, broad spectrum effective dielectric constant, small loss factor (tan δ), and large insulation without using germanium or zinc oxide. It is for obtaining the sintered compact of the semiconductor ceramic material which has resistance.
그런데, 이러한 목적은 니오븀 또는 탄탈륨을 도우프한 티탄산 스트론튬에 0.1 내지 2중량%의 이산화규소를 함유시킨 것을 특징으로 하는 반도체 세라믹재료의 소결체로서 달성된다. 본 발명에 있어서 이산화 규소의 존재하에서는 소결시 약간의 미소결정체의 성장이 대단히 촉진되어, 이 결과 소결생성물은 소형의 미소결정에 외에 대형의 미소결정체를 함유하는 것이 확인되었다.However, this object is achieved as a sintered body of a semiconductor ceramic material characterized by containing 0.1 to 2% by weight of silicon dioxide in strontium titanate doped with niobium or tantalum. In the present invention, in the presence of silicon dioxide, the growth of some microcrystals during sintering is greatly promoted. As a result, it was confirmed that the sintered product contained large microcrystals in addition to the small microcrystals.
또한 세라믹 재료에는 이산화 규소외에 0.1 내지 2중량%의 산화 알루미늄을 함유시키는 것이 바람직하다. 본 발명에 있어서는 소결시에 이산화규소 및 산화알루미늄의 상술한 분량으로 존재하는 경우에는 미소결정체의 제어된, 균일한 성장이 생기고 이 결과 입자의 분포가 한층 균일하게 된다는 것이 확인되었다. 이산화규소의 존재에 의해 자극되는 입자의 성장은 Ae2O3가 존재하기 때문에 한층 균일하게 발생된다. 이산화규소와 산화알루미늄의 상대적 분량을 변경시키므로써 생성물 전체를 통해 바람직한 균일한 입자의 크기를 얻을 수가 있다. 본 발명에 따른 세라믹 재료의 유전율은 약 5,000 내지 약 50,000의 넓은 범위에 미친다.In addition, it is preferable that the ceramic material contains 0.1 to 2% by weight of aluminum oxide in addition to silicon dioxide. In the present invention, when present in the above-mentioned amounts of silicon dioxide and aluminum oxide at the time of sintering, it was confirmed that a controlled and uniform growth of the microcrystals occurs, resulting in a more uniform distribution of particles. The growth of particles stimulated by the presence of silicon dioxide occurs more uniformly because Ae 2 O 3 is present. By varying the relative amounts of silicon dioxide and aluminum oxide, the desired uniform particle size can be obtained throughout the product. The dielectric constant of the ceramic material according to the present invention ranges from about 5,000 to about 50,000.
입자 경계부에 있어서 절연층은 산화 비스무스와 같은 금속산화물 또는 산화 비스무스 함유 금속산화물의 혼합물을 경계부에 확산시키므로써 통상적인 방법으로 얻어 질 수가 있다. 입자 경계부에 절연 유리질층을 형성시켜서 입자 경계부에 확산시킨 상술한 금속산화물 이외에 산화티탄늄, 산화 규소 및 경우에 따라서는 산화 알루미늄을 동시에 존재시키므로써 절연 유리질층을 전부 또는 일부분제거 시킬 수 있다. 본 발명에 관한 재료의 온도 감응성의 저하는 모름지기 이점 때문에 생길 것이다. 제각기 0.1중량% 보다 소량의 이산화규소 및 산화 알루미늄을 사용할 경우에는 입자의 성장 및 온도 감응성의 저하에 대한 상기 효과는 기술적 목적에 불충분한 정도가 된다. 2중량%가 넘는 양을 사용할 경우에는 이 효과의 증가는 이미 판별할 수 없게 된다.The insulating layer at the grain boundary can be obtained in a conventional manner by diffusing a metal oxide such as bismuth oxide or a mixture of bismuth oxide containing metal oxides at the boundary. In addition to the above-described metal oxides formed by forming the insulating glass layer on the grain boundary and diffusing to the grain boundary, titanium oxide, silicon oxide and, in some cases, aluminum oxide may be present at the same time to remove all or part of the insulating glass layer. The degradation of the temperature sensitivity of the material according to the invention will arise because of the unknown advantages. In the case of using less than 0.1% by weight of silicon dioxide and aluminum oxide, respectively, the above effect on the growth of particles and the decrease in temperature sensitivity becomes insufficient for technical purposes. If an amount of more than 2% by weight is used, the increase of this effect is not already discernible.
본 발명에 따른 반도체 세라믹 재료를 제조할 경우에는 시료로서 스트론튬 화합물(산화물, 탄산염)산화티탄늄 및 니오븀 또는 탄탈륨의 산화물을 최종 생성물중의 Ti+도우핑원소(Nb 또는 Ta)대 Sr의 그램원자비가 0.98 내지 1.04로 되게한 분량으로 사용하는 것이 바람직하다. 시료의 혼합물, 예를들어 탄산스트론튬, 이산화 티탄늄, 오산화 니오븀(Nb2O5), 이산화규소 및 산화알루미늄으로 구성되는 혼합물을 예를들어 대기중에 있어서, 1000 내지 1200℃로 2 내지 20시간 예비소결한다.When preparing a semiconductor ceramic material according to the present invention, a strontium compound (oxide, carbonate) titanium oxide and niobium or tantalum oxide are used as samples, and the gram atomic ratio of Ti + doping element (Nb or Ta) to Sr in the final product is It is preferable to use in the quantity which became 0.98 to 1.04. A mixture of samples, for example a mixture consisting of strontium carbonate, titanium dioxide, niobium pentoxide (Nb 2 O 5 ), silicon dioxide and aluminum oxide, is prepared for 2 to 20 hours at atmospheric temperature, for example, at 1000 to 1200 ° C. Sinter.
이어 생성한 재료를 분쇄하여 유기 결합제와 혼합한다. 유기 결합제로서는폴리비닐알코올과 같은 소결시게 완전히 소실되는 것을 사용한다. 이렇게 하여 얻어진 혼합물을 예를들어 프레스(press) 또는 압출(extrusion)하므로써 물체로 성형하며 이어 이 성형체를 환원성 분위기 중에서 1350 내지 1500℃의 온도로서 소결한다. 이어 이소결체를 입자 경계부에 확산시킨 경우에 절연층을 튠성하는 어느 분량의 금속산화물 또는 그 혼합물로서 피복한다.The resulting material is then ground and mixed with an organic binder. As the organic binder, those which disappear completely during sintering such as polyvinyl alcohol are used. The mixture thus obtained is molded into an object, for example, by pressing or extrusion, and then the molded body is sintered at a temperature of 1350 to 1500 DEG C in a reducing atmosphere. Subsequently, when the sintered body is diffused to the grain boundary, the insulating layer is coated with any amount of metal oxide or mixture thereof which is tuned.
적당한 금속산화물로서는 예를들어 CuO, MnO2및 Bi2O3가 있다. 그러나 산화납, 산화 비스무스 및 산화 붕소의 혼합물, 예를들어 산화납 50중량%, 산화비스무스 45중량% 및 산화붕소 5중량%로 구성되는 혼합물이 바람직하다.Suitable metal oxides are, for example, CuO, MnO 2 and Bi 2 O 3 . However, a mixture of lead oxide, bismuth oxide and boron oxide is preferred, for example a mixture consisting of 50% by weight lead oxide, 45% by weight bismuth oxide and 5% by weight boron oxide.
절연층의 형성은 금속산화물로 피복한 반도체 세라믹재료의 물체를 산화성 분위기내에서 1000 내지 1300℃의 온도까지 가열하므로써 이루어지는데, 이러한 처리동안에 반도체 세라믹 재료의 물체는 금속산화물을 흡수한다. 이후에 전극으로서 작용하는금속층, 예를들어 동 또는 은의 층을 2개의 대향면에 부착시킨다. 본 발명을 다음 실시예로서 설명한다.The formation of the insulating layer is achieved by heating an object of the semiconductor ceramic material coated with the metal oxide to a temperature of 1000 to 1300 ° C. in an oxidizing atmosphere, during which the object of the semiconductor ceramic material absorbs the metal oxide. Thereafter, a metal layer serving as an electrode, for example a layer of copper or silver, is attached to the two opposing surfaces. The present invention will be described as the following examples.
[실시예 1]Example 1
실효=6000을 가지는 반도체 세라믹 재료의 소결체의 제조Preparation of Sintered Body of Semiconductor Ceramic Material with Effectiveness = 6000
제조Produce
반도체 세라믹 재료를 다음 방법에 의해 제조했다.The semiconductor ceramic material was manufactured by the following method.
다음 물질 :The following substances:
SrTiO3183.5gSrTiO 3 183.5 g
Nb2O52.0g 형성한 티탄산-니오븀산2.0 g of Nb 2 O 5 formed titanic acid-niobate
SiO20.5g
Al2O31.1g
를 충분히 혼합하여, 이어 대기중에서 1150℃의 온도로 15시간 예비 소결했다. 그 생성물을 분쇄하여 폴리비닐 알코올과 혼합한 후에 프레스하여 직경 6mm 및 두께 0.6mm의 원판을 형성했다. 이 원판을 25℃의 물에 통과시킨 질소 80용량%와 수소 20용량%와의 혼합물로된 환원성분위기 내에서 1450°로 4시간동안 소결했다.
εeff=6000(1KHz) 50V=1011Ωcmεeff = 6000 (1KHz) 50V = 10 11 Ωcm
가장 놀라운 특징은 콘덴서의 온도의 존성이 극히 낮으므로 낮은 온도 감응성을 필요로 하는 콘덴서에 사용하기에 특히 적합하다는 것이다.The most surprising feature is the extremely low temperature dependence of the condenser, making it particularly suitable for use in condensers requiring low temperature sensitivity.
[실시예 2]Example 2
실효=5000 내지 15000의 반도체 세라믹 재료의 소결체의 제조Preparation of Sintered Body of Semiconductor Ceramic Material with Effectiveness = 5000 to 15000
다음 방법에 의해 반도체 세라믹 재료를 제조했다.The semiconductor ceramic material was manufactured by the following method.
SrCo3147.6g, TiO279.3g, Nb2O52.0g 이 외에 다른 분량의 SiO2및 Al2O3를 함유하는 혼합물에서 실시예 1과 같은 조작으로써 원판을 만들었다. 단, 예비소결은 대기중에서 1100℃로 4시간 행했다.A disc was made by the same operation as in Example 1 in a mixture containing 147.6 g of SrCo 3, 79.3 g of TiO 2 , and 2.0 g of Nb 2 O 5 in addition to other amounts of SiO 2 and Al 2 O 3 . However, presintering was performed at 1100 degreeC for 4 hours in air | atmosphere.
[표 1]TABLE 1
또한 표 1에 기재한 재료를 사용한 경우에 콘덴서의 온도의 존성이 낮다는 것을 명백히 알 수 있다.In addition, when the material shown in Table 1 is used, it is clear that the temperature dependency of a capacitor | condenser is low.
[실시예 3]Example 3
ε실효=8000의 반도체 세라믹 재료의 소결체의 제조.Production of a sintered body of a semiconductor ceramic material having an epsilon effective value of 8000.
다음 방법으로 반도체 세라믹 재료를 제조했다.The semiconductor ceramic material was manufactured by the following method.
다음 물질 :The following substances:
을 충분히 혼합하여, 이어 대기중에서 1150℃의 온도로 15시간 예비소결했다. 이렇게 하여 얻어진 생성물을 분쇄했다. 생성된 분말을 폴리비닐알코올과 혼합하여, 프레스하고, 직경 6mm 및 두께 0.6mm의 원판을 형성했다. 이 원판을 실시예에 기재한 바와 같이 환원성 분위기에서 1450℃로 4시간 소결했다.The mixture was sufficiently mixed and then presintered at a temperature of 1150 占 폚 for 15 hours in the atmosphere. The product thus obtained was pulverized. The resulting powder was mixed with polyvinyl alcohol and pressed to form a disc having a diameter of 6 mm and a thickness of 0.6 mm. This original plate was sintered at 1450 ° C. for 4 hours in a reducing atmosphere as described in the Examples.
소결체는 임의의 바람직한 형태로 할 수가 있었고, 예를들어 원판상태, 원통상태 및 관 상태로 할 수 있었다.The sintered body could be in any desired form, for example, in a disk state, a cylindrical state and a tube state.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019790000760A KR830000439B1 (en) | 1979-03-14 | 1979-03-14 | Sintered Body of Semiconductor Ceramic Material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019790000760A KR830000439B1 (en) | 1979-03-14 | 1979-03-14 | Sintered Body of Semiconductor Ceramic Material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR830000439B1 true KR830000439B1 (en) | 1983-03-08 |
Family
ID=19211043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019790000760A KR830000439B1 (en) | 1979-03-14 | 1979-03-14 | Sintered Body of Semiconductor Ceramic Material |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR830000439B1 (en) |
-
1979
- 1979-03-14 KR KR1019790000760A patent/KR830000439B1/en active
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