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Application filed by 스즈끼 에이지, 미쓰비시가세이 고오교 가부시끼가이샤filedCritical스즈끼 에이지
Priority to KR1019780003240ApriorityCriticalpatent/KR830000196A/en
Publication of KR830000196ApublicationCriticalpatent/KR830000196A/en
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음This content is subject to disclosure, so the full text is not included.
Claims (1)
파라크실렌을 초산 용매 중에서 분자상 산소에 의하여 산화시켜 레프탈산을 연속적으로 제조함에 있어서, 산화촉매로서 (a) 용매에 대하여 코발트로서 120ppm이상 200ppm미만의 코발트 화합물, (b) 코발트에 대하여 망간으로서 0.5 내지 1.5중량배의 망간 화합물 및 (c) 용매에 대하여 취소로서 200 내지 1000ppm의 취화 수소, 취화 코발트 또는 취화망간을 사용하고, 온도 205° 내지 230℃에서 산화반응액상 중의 수분 농도를 4 내지 14중량%로 유지하여 상기 산화를 행하는 것을 특징으로 하는 테레프탈산의 제조방법.In continuous production of lephthalic acid by oxidizing paraxylene in an acetic acid solvent by molecular oxygen, as an oxidation catalyst (a) a cobalt compound of 120 ppm or more and less than 200 ppm as cobalt to the solvent, and (b) 0.5 as manganese to cobalt. To 1.5 times by weight of the manganese compound and (c) using 200 to 1000 ppm of hydrogen embrittlement, cobalt embrittlement or manganese embrittlement as a cancellation to the solvent, and the moisture concentration in the oxidation reaction liquid phase at a temperature of 205° to 230° C. A method for producing terephthalic acid, characterized in that the oxidation is carried out while maintaining the percentage.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed according to the contents of the initial application.
KR1019780003240A1978-10-281978-10-28
Terephthalic acid production method
KR830000196A
(en)