KR20250124260A - 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들 - Google Patents

프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들

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Publication number
KR20250124260A
KR20250124260A KR1020257026342A KR20257026342A KR20250124260A KR 20250124260 A KR20250124260 A KR 20250124260A KR 1020257026342 A KR1020257026342 A KR 1020257026342A KR 20257026342 A KR20257026342 A KR 20257026342A KR 20250124260 A KR20250124260 A KR 20250124260A
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KR
South Korea
Prior art keywords
profile
gapi
edge
wafer
edge profile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257026342A
Other languages
English (en)
Korean (ko)
Inventor
융 싱 추
옌-춘 처우
야우-칭 양
징 뤼 훙
산-후이 린
Original Assignee
글로벌웨이퍼스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 글로벌웨이퍼스 씨오., 엘티디. filed Critical 글로벌웨이퍼스 씨오., 엘티디.
Publication of KR20250124260A publication Critical patent/KR20250124260A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/304—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H01L21/67288—
    • H01L22/12—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
KR1020257026342A 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들 Pending KR20250124260A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163260295P 2021-08-16 2021-08-16
US63/260,295 2021-08-16
PCT/US2022/039785 WO2023022898A1 (en) 2021-08-16 2022-08-09 Systems and methods for processing semiconductor wafers using front-end processed wafer geometry metrics
KR1020247008533A KR20240043802A (ko) 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020247008533A Division KR20240043802A (ko) 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들

Publications (1)

Publication Number Publication Date
KR20250124260A true KR20250124260A (ko) 2025-08-19

Family

ID=83188446

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257026342A Pending KR20250124260A (ko) 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들
KR1020247008533A Pending KR20240043802A (ko) 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020247008533A Pending KR20240043802A (ko) 2021-08-16 2022-08-09 프론트 엔드 프로세싱된 웨이퍼 기하형상 메트릭들을 사용하여 반도체 웨이퍼들을 프로세싱하기 위한 시스템들 및 방법들

Country Status (7)

Country Link
US (3) US12385850B2 (https=)
EP (2) EP4388579B1 (https=)
JP (2) JP7760704B2 (https=)
KR (2) KR20250124260A (https=)
CN (1) CN117999643A (https=)
TW (1) TW202544952A (https=)
WO (1) WO2023022898A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12385850B2 (en) * 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics
US20250290745A1 (en) * 2024-03-15 2025-09-18 Tokyo Electron Limited Apparatus and method for determining the surface profile of a semiconductor substrate using a laser scanning technique
WO2026015590A1 (en) 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Systems and methods for analyzing nanotopography of front-end processed semiconductor wafers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
US9102033B2 (en) 2010-11-24 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process
JP2012117811A (ja) * 2010-11-29 2012-06-21 Kunitoshi Nishimura ウエハ平坦度測定法
WO2013178459A1 (en) 2012-05-31 2013-12-05 Asml Netherlands B.V. Gradient-based pattern and evaluation point selection
US20140078495A1 (en) 2012-09-14 2014-03-20 Stmicroelectronics, Inc. Inline metrology for attaining full wafer map of uniformity and surface charge
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
US10401279B2 (en) 2013-10-29 2019-09-03 Kla-Tencor Corporation Process-induced distortion prediction and feedforward and feedback correction of overlay errors
US9645097B2 (en) * 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
KR102184033B1 (ko) 2014-06-24 2020-11-27 케이엘에이 코포레이션 반도체 프로세스 제어를 위한 패터닝된 웨이퍼 지오메트리 측정
US9870928B2 (en) 2014-10-31 2018-01-16 Veeco Precision Surface Processing Llc System and method for updating an arm scan profile through a graphical user interface
US10024654B2 (en) 2015-04-06 2018-07-17 Kla-Tencor Corporation Method and system for determining in-plane distortions in a substrate
KR102620998B1 (ko) * 2018-05-25 2024-01-04 삼성전자주식회사 기판 검사 방법, 기판 처리 방법 및 이를 수행하기 위한 기판 처리 시스템
WO2020043525A1 (en) * 2018-08-28 2020-03-05 Asml Netherlands B.V. Systems and methods of optimal metrology guidance
JP6899080B2 (ja) * 2018-09-05 2021-07-07 信越半導体株式会社 ウェーハ形状データ化方法
US12385850B2 (en) * 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics

Also Published As

Publication number Publication date
EP4576178A2 (en) 2025-06-25
US12385850B2 (en) 2025-08-12
TW202329278A (zh) 2023-07-16
TW202544952A (zh) 2025-11-16
JP2025166173A (ja) 2025-11-05
EP4388579A1 (en) 2024-06-26
KR20240043802A (ko) 2024-04-03
JP7760704B2 (ja) 2025-10-27
US20230047412A1 (en) 2023-02-16
EP4576178A3 (en) 2025-09-10
US20260063568A1 (en) 2026-03-05
WO2023022898A1 (en) 2023-02-23
US12487185B2 (en) 2025-12-02
US20230050442A1 (en) 2023-02-16
JP2024534046A (ja) 2024-09-18
CN117999643A (zh) 2024-05-07
EP4388579B1 (en) 2025-06-25

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