KR20250105429A - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

Info

Publication number
KR20250105429A
KR20250105429A KR1020257018541A KR20257018541A KR20250105429A KR 20250105429 A KR20250105429 A KR 20250105429A KR 1020257018541 A KR1020257018541 A KR 1020257018541A KR 20257018541 A KR20257018541 A KR 20257018541A KR 20250105429 A KR20250105429 A KR 20250105429A
Authority
KR
South Korea
Prior art keywords
source
period
frequency power
bias
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257018541A
Other languages
English (en)
Korean (ko)
Inventor
지시오 고시미즈
유토 고사카
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250105429A publication Critical patent/KR20250105429A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020257018541A 2022-11-18 2023-11-06 플라즈마 처리 장치 및 플라즈마 처리 방법 Pending KR20250105429A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022184995 2022-11-18
JPJP-P-2022-184995 2022-11-18
PCT/JP2023/039941 WO2024106256A1 (ja) 2022-11-18 2023-11-06 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
KR20250105429A true KR20250105429A (ko) 2025-07-08

Family

ID=91084607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257018541A Pending KR20250105429A (ko) 2022-11-18 2023-11-06 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (6)

Country Link
US (1) US20250266248A1 (https=)
JP (1) JPWO2024106256A1 (https=)
KR (1) KR20250105429A (https=)
CN (1) CN120188576A (https=)
TW (1) TW202437326A (https=)
WO (1) WO2024106256A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Also Published As

Publication number Publication date
WO2024106256A1 (ja) 2024-05-23
CN120188576A (zh) 2025-06-20
US20250266248A1 (en) 2025-08-21
JPWO2024106256A1 (https=) 2024-05-23
TW202437326A (zh) 2024-09-16

Similar Documents

Publication Publication Date Title
KR102786710B1 (ko) 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US20240170257A1 (en) Plasma processing apparatus and plasma processing method
TW202401492A (zh) 電漿處理方法及電漿處理裝置
US20250149296A1 (en) Plasma processing apparatus and plasma processing method
KR20240119145A (ko) 플라즈마 처리 장치, 전원 시스템, 제어 방법, 프로그램, 및 기억 매체
KR20240002720A (ko) 플라즈마 처리 시스템 및 플라즈마 처리 방법
TW202425051A (zh) 蝕刻方法及電漿處理裝置
CN119522474A (zh) 等离子体处理装置和等离子体处理方法
KR20240101662A (ko) 플라즈마 처리 장치, 전원 시스템, 제어 방법, 프로그램, 및 기억 매체
KR20250105429A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20250042788A (ko) 플라스마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US20220392748A1 (en) Plasma processing apparatus and plasma processing method
TW202437325A (zh) 電漿處理裝置及電漿處理方法
CN120188575B (zh) 等离子体处理装置、电源系统和控制生成源频率的方法
TW202335028A (zh) 電漿處理裝置、供電系統、控制方法、程式及記憶媒體
KR20250072991A (ko) 플라스마 처리 장치 및 플라스마 처리 방법
TW202403829A (zh) 電漿處理裝置及電漿處理方法
TW202442033A (zh) 電漿處理裝置、電源系統及頻率控制方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)