KR20240141321A - 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 전자 디바이스 - Google Patents
감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 전자 디바이스 Download PDFInfo
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- KR20240141321A KR20240141321A KR1020247029848A KR20247029848A KR20240141321A KR 20240141321 A KR20240141321 A KR 20240141321A KR 1020247029848 A KR1020247029848 A KR 1020247029848A KR 20247029848 A KR20247029848 A KR 20247029848A KR 20240141321 A KR20240141321 A KR 20240141321A
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Classifications
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- C08F212/02—Monomers containing only one unsaturated aliphatic radical
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G03F7/20—Exposure; Apparatus therefor
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Emergency Medicine (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022050193 | 2022-03-25 | ||
| JPJP-P-2022-050193 | 2022-03-25 | ||
| PCT/JP2023/009567 WO2023182040A1 (ja) | 2022-03-25 | 2023-03-13 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、電子デバイス |
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| KR20240141321A true KR20240141321A (ko) | 2024-09-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| KR1020247029848A Pending KR20240141321A (ko) | 2022-03-25 | 2023-03-13 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 전자 디바이스 |
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| US (1) | US20240427243A1 (https=) |
| JP (1) | JPWO2023182040A1 (https=) |
| KR (1) | KR20240141321A (https=) |
| TW (1) | TW202347026A (https=) |
| WO (1) | WO2023182040A1 (https=) |
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| WO2025254036A1 (ja) * | 2024-06-07 | 2025-12-11 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
Citations (1)
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| WO2021153466A1 (ja) | 2020-01-31 | 2021-08-05 | 富士フイルム株式会社 | ポジ型レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
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2023
- 2023-03-13 JP JP2024510028A patent/JPWO2023182040A1/ja active Pending
- 2023-03-13 WO PCT/JP2023/009567 patent/WO2023182040A1/ja not_active Ceased
- 2023-03-13 KR KR1020247029848A patent/KR20240141321A/ko active Pending
- 2023-03-22 TW TW112110551A patent/TW202347026A/zh unknown
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2024
- 2024-09-06 US US18/827,449 patent/US20240427243A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021153466A1 (ja) | 2020-01-31 | 2021-08-05 | 富士フイルム株式会社 | ポジ型レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023182040A1 (ja) | 2023-09-28 |
| JPWO2023182040A1 (https=) | 2023-09-28 |
| TW202347026A (zh) | 2023-12-01 |
| US20240427243A1 (en) | 2024-12-26 |
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