KR20240075338A - Polymer hardening process apparatus using dual plasma source - Google Patents

Abstract

The present invention relates to a process for curing a polymer formed on a substrate, and to a technology for performing the curing process using electrons and ions simultaneously through a dual plasma source in a vacuum chamber.
The polymer curing process device using dual plasma according to the present invention includes a first plasma generator disposed on the upper side of a vacuum chamber to generate high-density plasma by reacting with a process gas, and disposed below the first plasma generator, and applying A grid electrode that emits ions in high-density plasma downward through a plurality of grid holes according to the negative voltage, is placed on the lower side of the grid electrode and reacts with the process gas to generate low-density plasma, and has a plurality of cathode holes. As a negative voltage is applied to the formed cathode, secondary electrons are generated by colliding with ions in the low-density plasma formed below the cathode, and these secondary electrons and ions flowing from the grid electrode through the cathode hole are transferred to the vacuum chamber. A second plasma generator that emits simultaneously to a substrate disposed on the lower side of the inside, and a preset high voltage is supplied to the first plasma generator and the second plasma generator to generate plasma, and the grid electrode and the second plasma generator It is characterized by including a control means for supplying a preset negative (-) voltage to the cathode and controlling the simultaneous emission of ions and electrons toward the substrate.

Description

Polymer curing process device using a dual plasma source {POLYMER HARDENING PROCESS APPARATUS USING DUAL PLASMA SOURCE}

The present invention relates to a process for curing a polymer formed on a substrate, and to a technology for performing the polymer curing process using electrons and ions simultaneously through a dual plasma source in a vacuum chamber.

One of the hot topics in the semiconductor industry is to inexpensively manufacture semiconductor products that are miniaturized, multi-functional, high-performance, high-capacity, and highly reliable. One of the important technologies that achieves these complex goals is semiconductor package technology. Among semiconductor package technologies, wafer-level semiconductor packages, which package chips at the wafer level, are evolving and developing into various forms.

In these semiconductor processes, polymer materials such as polyimide, BCB (benzocyclobutene), and PBO (polybenzoxazole) are generally used as process materials. Processes using polymer materials include low dielectric constant spin on polymer and spin on glass. There are IMD (inter metal dielectric) process, ILD (iner layer dielectric) process, FO wafer package process, 3D wafer, hybride donding process, and polyimide curing process for flexible displays.

Currently, this polymer curing process is performed using an electron beam in a vacuum chamber.

However, when the polymer curing process is performed using only an electron beam, the process is performed for a long time or several times under high temperature conditions, which changes the electrical properties of the substrate on which the polymer layer is formed due to electrons or causes substrate warping. Otherwise, problems may arise that make the process impossible to proceed.

For example, in the IMD process, when a curing process is performed using an electron beam after spin on polymer deposition of 0.1 to 0.3 μm, the electrical properties of the lower device change due to the formation of negative charges of electrons on the surface and inside the polymer, leading to defects in the semiconductor device. can cause

In addition, during the redistribution layer and hybrid bonding process of FO-WLP (Fan Out-Wafer Level Package), a polymer such as polyimide of about 0.1 to 10 μm is used to insulate the signal terminal of the device. In this case, the polymer is used as a After spin coating or deposition, the process is performed using an electron beam at 200 to 300°C for 30 minutes to 1 hour. In this case, the polymer layer is charged by the electron beam and charged through the metal pad terminal of the device, which not only changes the electrical characteristics of the device, but also causes thermal deformation in the substrate due to long-term curing at high temperature, resulting in substrate warpage of 50 to 100 μm or more. ) occurs, and this substrate bending phenomenon makes it impossible to form a 1-2μm fine circuit in the subsequent process.

In addition, the polyimide curing process used in flexible displays involves spin-coating polyimide to a thickness of 10 μm or more on 50 to 100 mm thick glass and then performing the curing process. Since the polyimide is thick, electrons of 8,000 to 10,000 μC are used to cure the curing process. As the process progresses, a problem may occur in which electrons cannot penetrate due to charge build-up caused by the electron beam on the polyimide surface, making the process impossible to proceed.

In other words, the polymer curing process using an electron beam must be performed several times in a high temperature environment for a certain period of time. This causes problems such as a decrease in the flatness of the polyimide thin film, swelling of the thin film, and bending of the substrate, making pattern formation impossible. occurs.

1. Korean Patent Publication No. 10-2020-0066865 (Title of invention: Manufacturing method of semiconductor package) 2. Korean Patent No. 10-2026705 (Title of invention: Fan-out package process with both warpage reduction and EMI shielding functions)

Accordingly, the present invention was created in consideration of the above circumstances, and the ions in the plasma generated from the upper plasma source in the vacuum chamber and the secondary electrons generated from the lower plasma source are simultaneously supplied to the polymer-coated substrate, thereby more stably forming the polymer. The technical purpose is to provide a polymer curing process device using a dual plasma source that enables curing.

According to one aspect of the present invention for achieving the above object, in the polymer curing process device for curing a large-area substrate on which a polymer layer is formed by reacting with a process gas inside a vacuum chamber, it is disposed at the upper side of the vacuum chamber and mixes with the process gas. a first plasma generator that reacts to generate high-density plasma, and is disposed below the first plasma generator and emits ions in the high-density plasma downward through a plurality of grid holes according to an applied negative voltage. A grid electrode is disposed below the grid electrode and reacts with the process gas to generate low-density plasma. As a negative voltage is applied to the cathode where a plurality of cathode holes are formed, ions in the low-density plasma formed below collide. A second plasma generator that generates secondary electrons and simultaneously emits the secondary electrons and ions flowing from the grid electrode through the cathode hole to the substrate disposed below in the vacuum chamber; the first plasma generator and In a state where a preset high voltage is supplied to the second plasma generator to generate plasma, a preset negative (-) voltage is supplied to the grid electrode and the cathode of the second plasma generator, thereby controlling the simultaneous emission of ions and electrons toward the substrate. A polymer curing process device using dual plasma is provided, characterized in that it includes a control means.

In addition, it is characterized by being used in the polymer curing process including the PI (polyimide) curing process of the flexible display, the fan out (FAN OUT) wafer package process, and the SOP (spin on polymer)/SOG (spin on glass) curing process. A polymer curing process device using dual plasma is provided.

In addition, a polymer curing process device using dual plasma is provided, wherein the first plasma generator generates high-density plasma using one of an ICP or TCP electromagnetic field, or a hollow cathode. .

In addition, at least one of the first and second plasma generators is configured with a cathode disposed above and an anode disposed below the cathode, wherein the anode is located within the cathode and the electron free path distance. A polymer curing process device using the same is provided.

In addition, a polymer curing process device using dual plasma is provided, wherein the cathode hole formed in the cathode of the second plasma generator is inclined so that the diameter increases downward.

In addition, a polymer curing process device using dual plasma is provided, wherein an insulating layer is formed on the inner peripheral surface of the cathode hole formed in the cathode of the second plasma generator.

In addition, a polymer curing process device using dual plasma is provided, wherein a magnetic layer made of a material containing a certain weight of magnetic components is formed on the upper surface of the cathode where the second plasma is generated.

In addition, the second plasma generator emits ions in the low-density plasma toward the grid electrode through the cathode hole, and further emits second secondary electrons generated by the ions colliding with the grid electrode toward the substrate through the cathode hole, 2 A polymer curing process device using dual plasma is provided, wherein the secondary electrons generated by colliding with the cathode penetrate into different depths of the polymer layer formed on the substrate.

In addition, the grid electrode consists of an upper grid electrode on which a plurality of grid holes are formed and a lower grid electrode on the lower side of which a plurality of grid holes are formed, and the upper grid electrode responds to a negative (-) voltage applied from the control means. Accordingly, the ions in the high-density plasma are discharged downward, and the lower grid electrode is configured to emit the second secondary electrons generated from the lower side and the ions flowing in from the upper side according to the positive voltage applied from the control means. A polymer curing process device using dual plasma, characterized in that, is provided.

In addition, the control means is configured to supply a pulse voltage in the form of a negative voltage being applied at a constant cycle to the cathode of the second plasma generator.

In addition, it is configured to further include a microwave generator that forms a microwave between the grid electrode and the cathode of the second plasma generator, and the control means is configured to operate when the microwave is formed between the grid electrode and the cathode of the second plasma generator. A polymer curing process device using dual plasma is provided, characterized in that a preset voltage is supplied to the grid electrode and the cathode of the second plasma generator.

In addition, between the first and second plasma generators, there is a high vacuum line for discharging fume outgassed through the grid hole and the cathode hole formed in the cathode of the second plasma generator to the outside of the vacuum chamber. A polymer curing process device using dual plasma is provided, which is characterized in that it is provided and configured.

In addition, the control means supplies a pulse voltage of alternating negative (-) voltage and positive (+) voltage to the grid electrode, and the grid electrode supplies high-density plasma on the upper side in the section where the negative (-) voltage is applied. Internal ions are emitted downward, and in the section where positive voltage is applied, electrons in the upper high-density plasma are emitted downward, and secondary electrons generated by collisions between these electrons and ions in the low-density plasma are transferred to the polymer layer of the substrate. A polymer curing process device using dual plasma is provided, which is configured to simultaneously penetrate to different depths.

In addition, a polymer curing process device using dual plasma is provided, which further includes a heating means driven during the curing process inside the vacuum chamber.

According to the present invention, ions in the plasma generated from the upper plasma source in the vacuum chamber and secondary electrons generated from the lower plasma source are simultaneously supplied to the polymer-coated substrate to perform polymer curing treatment more stably, thereby improving product yield and Productivity can be greatly improved.

In particular, when curing the polyimide substrate of a flexible display, ions and secondary electrons are simultaneously supplied to the substrate to prevent charge build-up from occurring on the substrate.

In addition, in the fan-out package process, ions and electrons are simultaneously supplied to the substrate to reduce thermal stress, thereby suppressing substrate warping, making it possible to form fine patterns of 1 to 2 μm in the subsequent process.

Figure 1 is a configuration diagram of a polymer curing process device using a dual plasma source according to a first embodiment of the present invention.
Figure 2 is a diagram for explaining the process of generating secondary electrons (e1, e2) using ions (i) in the second plasma (P2) shown in Figure 1 and the penetration depth within the polymer layer (2).
Figure 3 is a diagram for explaining another configuration of the grid electrode 200 shown in Figure 1.
Figure 4 is a diagram for explaining various configurations of the cathode 310 shown in Figure 1.
5 to 7 are diagrams of a polymer curing process device using a dual plasma source according to another embodiment of the present invention.

The embodiments described in the present invention and the configurations shown in the drawings are only preferred embodiments of the present invention and do not express the entire technical idea of the present invention. Therefore, the scope of rights of the present invention is limited to the embodiments and drawings described in the text. It should not be construed as limited by. In other words, since the embodiment can be modified in various ways and can have various forms, the scope of rights of the present invention should be understood to include equivalents that can realize the technical idea. In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment must include all or only such effects, so the scope of the present invention should not be understood as limited thereby.

All terms used herein, unless otherwise defined, have the same meaning as commonly understood by a person of ordinary skill in the field to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as consistent with the meaning they have in the context of the related technology, and cannot be interpreted as having an ideal or excessively formal meaning that is not clearly defined in the present invention.

Figure 1 is a configuration diagram of a polymer curing process apparatus using a dual plasma source according to the first embodiment of the present invention.

Referring to Figure 1, the polymer curing process device using a dual plasma source according to the present invention is a device that cures a large-area substrate on which a polymer layer is formed by reacting with a process gas inside a vacuum chamber (C). ) Inside, the first plasma generator 100, the grid electrode 200, and the second plasma generator 300 are arranged sequentially from top to bottom, and the first and It is configured to cure the polymer layer 2 of the substrate 1 by simultaneously using ions and electrons generated in the second plasma generators 100 and 300.

At this time, a substrate 1 on which a polymer layer 2 coated with an insulating polymer is formed on the upper surface of the substrate support 10 is disposed below the second plasma generator 300, and the polymer is cured around the substrate support 10. Heating means 20, such as a ceramic heater and an IR lamp, are disposed to heat the substrate 1 used during the process. Here, the heating means 20 is installed on one side of the inside of the vacuum chamber (C), for example, between the second plasma generator 300 and the substrate 1, and is configured to further shorten the process time by heating the inside during the curing process. You can.

In addition, although not shown, one side of the vacuum chamber C is provided with a vacuum pump for maintaining a vacuum state, a vacuum line connected thereto, a process gas injection port, and a gas exhaust port. Then, process gas containing N2, Ar, He, etc. is injected into the vacuum chamber (C) for the polymer curing process.

That is, the present invention simultaneously combines the ions (i) on the first plasma (P1) generated in the first plasma generator (100) and the secondary electrons (e) generated in the second plasma generator (300) to the substrate (1). The main feature is that the polymer layer 2 is cured using a cascade type dual beam plasma device that emits to the ) side.

In addition, the present invention is applied to a process of curing polymer materials containing polyimide, BCB (benzocyclobutene), and PBO (polybenzoxazole), and is applied to low dielectric constant SOP (spin on polymer) or SOG (spin on glass) curing process using, IMD (inter metal dielectric) process, ILD (iner layer dielectric) process, FO-WLP (Fan Out-Wafer Level Package) process, 3D wafer hybride donding process, PI (polyimide of flexible display) ) It can be used in various polymer curing processes, including curing processes.

In Figure 1, the first plasma generator 100 is configured to include a cathode 110 that generates high-density plasma by reacting with a process gas using one of 13.56 MHz RF, DC, and HF (50 to 300 KHz), Ions (i) in the first plasma (P1) are emitted downward using the grid electrode 200.

The first plasma generator 100 may be made of a device that generates plasma using either an ICP or TCP electromagnetic field, a hollow cathode, or DC discharge grow, and is composed of a cathode and an anode to generate DC discharge. When using grow, it is desirable for the anode to be located within the electron free path distance from the cathode.

At this time, the cathode 110 is made of metal such as Al, SUS, Cu, or a material such as graphite or silicon cobon nano tube and has a thickness of 10 to 100 mm.

The grid electrode 200 is disposed on the lower side of the first plasma generator 100 and is made of a material such as metal such as Al, SUS, Cu, graphite, or silicon cobon nano tube, and has a thickness of 10 to 100 mm and a diameter of 1 to 50 nm. A plurality of grid holes 200H having are formed and configured.

As a negative bias voltage is applied to the grid electrode 200, the ions (i) on the first plasma (P1) generated in the first plasma generator 100 are moved to the lower side through the grid hole (200H). It is released as

The second plasma generator 300 is disposed below the grid electrode 200 and performs grow discharge using either DC or HF (50 to 300 KHz) power applied from the outside to generate low-density plasma. It is configured to include a cathode 310 that generates.

At this time, as negative power is applied to the cathode 310, ions (i) in the second plasma (P2) formed below collide with the cathode 310 to generate secondary electrons (e), These secondary electrons (e) and ions (i) of the first plasma (P1) flowing from the grid electrode 200 are simultaneously emitted downward.

This cathode 310 is made of metal such as Al, SUS, Cu, graphite, silicon cobon nano tube, etc., and has a thickness of 10 to 100 mm, and is composed of a plurality of cathode holes 310H with a diameter of 1 to 50 nm. .

Additionally, the second plasma generator 300 may be configured to further include an anode 320 below the cathode 310. At this time, the anode 320 is placed within the electron free path (mean free path) of the cathode 310, and is made of metal such as Al, SUS, Cu, graphite, silicon cobon nano tube, etc., and has a thickness of 10 to 100 mm. , It is constructed by forming a number of anode holes (320H) with a diameter of 1 to 50 nm.

The anode 320 functions to prevent the emission of metal particles due to electron beam convergence of the second plasma P2 formed below the anode 320.

In addition, as a negative voltage of -10 to -300 V is applied to the anode 320, ions (i) in the second plasma (P2) formed between the anode 320 and the substrate 1 are connected to the anode 320. flows in through the anode hole 320H and is emitted toward the cathode 310, and collides with the surface of the cathode 310 to which a larger negative voltage, for example -5KV, is applied to generate secondary electrons (e). do. Accordingly, secondary electrons generated when ions (i) in the first plasma (P) and ions (i) in the second plasma (P) collide with the cathode 310 through the anode hole 320H of the anode 320. (e) is simultaneously released toward the substrate 1.

The control means 400 applies a preset first voltage to the first plasma generator 100 to form a high-density first plasma P1, and applies a preset second voltage to the second plasma generator 300. is applied to form a low-density second plasma (P2) by glow discharge, and then a negative (-) voltage is applied to the grid electrode 200 so that ions (i) in the first plasma (P1) are generated at the grid electrode ( In addition to being emitted downward through 200H), a negative (-) voltage is applied to the cathode 310 so that ions (i) in the second plasma (P2) collide with the cathode 310 to produce secondary electrons (e). It is generated and controlled so that it is released downward.

At this time, the control means 400 adjusts the plasma density by adjusting the process gas flow rate and pressure and the first and second voltage levels supplied to the first and second plasma generators 100 and 300, and controls the substrate in response to the plasma density. The electron density and ion density applied to the (1) side are controlled. Accordingly, the control means 400 can adjust the ion density and electron penetration depth according to the type and thickness of the polymer to be cured and the process conditions.

That is, as shown in FIG. 2, ions (i) in the second plasma (P2) basically collide with the surface of the cathode 310 to generate first secondary electrons (e1) and emit them toward the substrate 1. . At this time, a cathode hole 310H is formed in the cathode 310, and ions (i) in the second plasma P2 collide with the lower surface of the grid electrode 200 through the cathode hole 310H to generate second secondary electrons. (e2) may be generated, and the second secondary electrons (e2) may be emitted toward the substrate 1 through the cathode pole 310H.

As a result, the ions (i) in the first plasma (P1) and the ions (i) in the second plasma (P2) collide with the cathode 310 of the second plasma generator 300 to generate first secondary electrons (e1). ) and second secondary electrons (e2) generated when ions (i) in the second plasma (P2) collide with the grid electrode 200 are simultaneously applied to the substrate 1 side.

At this time, the ions (i) supplied to the substrate 1 are injected at a depth corresponding to the ion density of the first plasma P1, preferably on the surface side of the substrate 1, and the first secondary electrons (e1) is injected into the substrate 1 as the first energy (E1) corresponding to the voltage level applied to the cathode 310, and the second secondary electrons (e2) are input to the grid voltage applied to the grid electrode 200 and the cathode 310. ) is input to the substrate 1 as a second energy (E2) greater than the first energy (E1) corresponding to the sum of voltage levels applied to the . That is, the first secondary electrons (e1) and the second secondary electrons (e2) penetrate into the polymer layer 2 at different depths, which is more efficient for the substrate 1 where the thickness of the polymer layer 2 is above a certain level. The polymer layer 2 can be cured.

In addition, the control means 400 provides a pulse signal in the form of alternating negative (-) voltage and positive (+) voltage to the grid electrode 200, and when the negative (-) voltage is applied, the first plasma ( The electrons (e) in P1) are emitted downward, together with the secondary electrons (e1, e2) generated by the ions (i) in the second plasma (P2), toward the substrate (1) at a greater density. , When a positive (+) voltage is applied to the grid electrode 200, the ions (i) in the first plasma (P1) are emitted downward, and the secondary electrons generated by the ions (i) in the second plasma (P2) are emitted downward. It can be controlled to be released toward the substrate 1 at the same time as e1 and e2.

Additionally, the control means may be configured to supply a pulse voltage in the form of a negative (-) voltage being applied to the cathode 310 of the second plasma generator 300 at regular intervals. For example, a pulse voltage that alternates between a negative (-) voltage and a “0” state or a pulse voltage that alternates between a negative (-) voltage and a positive (+) voltage may be supplied to the cathode 310. In this case, when a negative (-) voltage is supplied to the cathode 310, secondary electrons (e) are generated by ions in the second plasma (P2) and are formed on the substrate (1) together with ions (i) in the first plasma (P1). ) is provided on the side.

In addition, in the present invention, as shown in FIG. 3, a surface roughness 201 is formed on the lower surface of the grid electrode 200, so that ions (i) in the second plasma P2 are formed on the grid with the roughness 210. The diffusion angle of the second secondary electrons e2 generated by colliding with the lower surface of the electrode 200 may be widened.

In addition, the cathode 310 of the second plasma generator 300 is composed of a two-layer form in which an insulating layer such as ceramic is laminated on the upper side of a metal layer such as Al, or a ceramic layer is formed on the upper side of the metal layer such as Al. An iron-lead layer such as an iron layer is formed, and a magnetic layer made of a material containing a certain weight of magnetic material is laminated on the upper side of this insulating layer. In this case, the thickness of the insulating layer such as ceramic is 1- It is desirable to set it in the 100 mm range.

In addition, the diameter or aperture ratio of the cathode hole 310H of the second plasma generator 300 is set to be larger than that of the grid hole 200H of the grid electrode 200 disposed above, so that the cathode hole 310H emits radiation to the lower side of the cathode 310. It can be configured to increase the emission efficiency of ions (i) and second secondary electrons (e2) in the first plasma (P).

Additionally, as shown in Figure 4 (A), the cathode 310 may be configured to be inclined so that the diameter of the cathode hole 310H widens downward. At this time, it is preferable that the inclination angle is set within 45°.

As shown in Figure 4 (B), the cathode 310 is vacuum-deposited or spray-coated with a ceramic material such as Al ₂ O ₃ , an insulator, to a thickness of 1 to 200 μm on the inner surface of the cathode hole 310H. The insulating layer 311 is formed so that the ions (i) emitted from the first plasma (P1) and the second secondary electrons (e2) generated by colliding with the grid electrode 200 are accelerated or decelerated by the cathode voltage. It can be prevented.

In addition, as shown in FIG. 4 (C), the cathode 310 is made of a material containing a certain weight of a magnetic component by performing sol-gel coating or vacuum coating on the upper surface of the cathode 310 or attaching a magnetic thin plate, etc. By forming the magnetic layer 312 made of, an electromagnetic field is formed at the exit of the cathode hole 310H, and ions (i) emitted from the first plasma (P1) collide with the grid electrode 200 to generate second secondary electrons. (e2) The uniformity of the curing process can be improved by performing movement in a more lateral direction due to movement by the electromagnetic field of the cathode hole (310H).

Meanwhile, Figure 5 is a configuration diagram of a polymer curing process device using a dual plasma source according to a second embodiment of the present invention, in which first and second grid electrodes 210 and 220 are located on the lower side of the first plasma generator 100. It may be arranged sequentially at a certain distance apart.

At this time, the control means 400 applies a negative voltage to the first grid electrode 210 to induce the ions (i) in the first plasma (P1) formed on the upper side to the lower side and emit them, A positive (+) voltage is applied to the second grid electrode 220 and the ions (i) in the second plasma (P2) formed below collide and the second secondary electrons (e2) generated are controlled to be emitted downward. do.

In addition, the control means 400 provides a pulse signal in the form of alternating negative (-) voltage and positive (+) voltage to the first grid electrode 210 to generate ions (i) in the first plasma (P1) and It can be carried out to emit electrons (e) alternately.

Meanwhile, Figure 6 is a configuration diagram of a polymer curing process device using a dual plasma source according to a third embodiment of the present invention, in which a microwave generator 500 is installed between the grid electrode 200 and the second plasma generator 300. ) may be additionally provided.

The microwave generator 500 emits line beam-shaped electron beams from both sides of the vacuum chamber (C) to generate microwaves due to collision of the electron beams, or may be configured to directly inject microwaves from the outside. . The enlarged view in Figure 6 is a plan view viewed from above the microwave generator 500.

At this time, the control means 400 operates the grid electrode 200 and the second plasma generator 300 in a state where a microwave is formed between the grid electrode 200 and the cathode 310 of the second plasma generator 300. A preset voltage is supplied to the cathode 310, and the ions (i) and the second plasma in the first plasma (P1) located between the grid electrode 200 and the second plasma generator 300 are generated by microwaves. The density of the second secondary electrons (e2) generated by collision of ions (i) in the plasma (P2) is formed to be higher, which not only lowers the process temperature, but also provides the effect of shortening the process time.

In addition, Figure 7 is a configuration diagram of a polymer curing process device using a dual plasma source according to a fourth embodiment of the present invention, in which fume is distributed between the first and second plasma generators 100 and 300 in a vacuum chamber (C). ) may be additionally provided with a high vacuum line 600 for discharging to the outside.

In other words, the high vacuum line 600 discharges out-gassed fume to the outside through a plurality of grid holes 200H and cathode holes 310H formed in the grid electrode 200 and the cathode 310. By doing this, it is possible to prevent radicals, which are chemical components generated by the process gas in the plasma, from being emitted to the outside, thereby causing chemical deformation in the substrate 1.

At this time, the high vacuum line 600 is set to have a faster pumping speed than the chambers of the first plasma generator 100 and the second plasma generator 300, by adjusting the position of the turbo pump or the size of the line. It can be set to have an appropriate pumping speed. Here, the first plasma generator 100 and the second plasma generator 300 may be configured to have separate chambers (not shown).

100: first plasma generator, 200: grid electrode,
300: second plasma generator, 310: cathode,
320: anode, 400: control means,
500: microwave generator, 600: high vacuum line,
1: substrate, 2: polymer layer,
10: substrate support, 20: heating means,
C: Vacuum chamber, P1, P2: Plasma,
E: outlet.

Claims (14)

In a polymer curing process device that cures a large-area substrate on which a polymer layer is formed by reacting with a process gas inside a vacuum chamber,
A first plasma generator disposed on the upper side of the vacuum chamber and reacting with the process gas to generate high-density plasma;
A grid electrode disposed below the first plasma generator and emitting ions in the high-density plasma downward through a plurality of grid holes according to an applied negative voltage,
It is placed below the grid electrode and reacts with the process gas to generate low-density plasma, and when a negative voltage is applied to the cathode where a plurality of cathode holes are formed, ions in the low-density plasma formed below collide to generate secondary electrons. A second plasma generator that generates and simultaneously emits the secondary electrons and ions flowing from the grid electrode through the cathode hole to the substrate disposed on the lower side of the vacuum chamber;
In a state where a preset high voltage is supplied to the first plasma generator and the second plasma generator to generate plasma, a preset negative voltage is supplied to the grid electrode and the cathode of the second plasma generator to generate ions and ions toward the substrate. A polymer curing process device using dual plasma, characterized in that it includes a control means for controlling electrons to be emitted simultaneously.
According to paragraph 1,
It is used in polymer curing processes including the PI (polyimide) curing process of the flexible display, the FO-WLP (Fan Out-Wafer Level Package) process, and the SOP (spin on polymer)/SOG (spin on glass) curing process. A polymer curing process device using dual plasma.
According to paragraph 1,
A polymer curing process device using dual plasma, wherein the first plasma generator generates high-density plasma using one of an ICP or TCP electromagnetic field, or a hollow cathode.
According to paragraph 1,
At least one of the first and second plasma generators is configured with a cathode disposed above and an anode disposed below the cathode, wherein the anode is located within the electron free path distance from the cathode. Polymer using dual plasma Curing process equipment.
According to paragraph 1,
A polymer curing process device using dual plasma, wherein the cathode hole formed in the cathode of the second plasma generator is inclined so that the diameter increases downward.
According to clause 5,
A polymer curing process device using dual plasma, characterized in that an insulating layer is formed on the inner peripheral surface of the cathode hole formed in the cathode of the second plasma generator.
According to claim 5 or 6,
A polymer curing process device using dual plasma, wherein a magnetic layer made of a material containing a certain weight of magnetic components is formed on the upper surface of the cathode where the second plasma is generated.
According to paragraph 1,
The second plasma generator emits ions in the low-density plasma toward the grid electrode through the cathode hole, and further emits second secondary electrons generated by the ions colliding with the grid electrode toward the substrate through the cathode hole, thereby generating the second secondary electrons. A polymer curing process device using dual plasma, characterized in that the secondary electrons generated by colliding with the electrons and the cathode penetrate into different depths of the polymer layer formed on the substrate.
According to clause 8,
The grid electrode consists of an upper grid electrode on which a plurality of grid holes are formed and a lower grid electrode on the lower side of which a plurality of grid holes are formed,
The upper grid electrode emits ions in the high-density plasma downward according to the negative voltage applied from the control means,
A polymer curing process using dual plasma, characterized in that the lower grid electrode is configured to emit second secondary electrons generated from the lower side and ions flowing from the upper side to the lower side in accordance with a positive voltage applied from the control means. Device.
According to paragraph 1,
It is configured to further include a microwave generator that forms microwaves between the grid electrode and the cathode of the second plasma generator,
The control means supplies a preset voltage to the grid electrode and the cathode of the second plasma generator in a state in which a microwave is formed between the grid electrode and the cathode of the second plasma generator. A polymer curing process device using dual plasma. .
According to paragraph 1,
A high vacuum line is provided between the first and second plasma generators to discharge fume outgassed through the grid hole and the cathode hole formed in the cathode of the second plasma generator to the outside of the vacuum chamber. A polymer curing process device using dual plasma, characterized in that:
According to paragraph 1,
The control means supplies a pulse voltage of alternating negative (-) voltage and positive (+) voltage to the grid electrode,
In the section where negative (-) voltage is applied, the grid electrode emits ions in the upper high-density plasma downward, and in the section where positive (+) voltage is applied, the grid electrode emits electrons in the upper high-density plasma downward. A polymer curing process device using dual plasma, characterized in that the electrons and the secondary electrons generated by ion collision in the low-density plasma simultaneously penetrate into different depths of the polymer layer of the substrate.
According to paragraph 1,
The control means is configured to supply a pulse voltage in the form of a negative voltage being applied at a constant cycle to the cathode of the second plasma generator.
According to paragraph 1,
A polymer curing process device using dual plasma, characterized in that the vacuum chamber is further provided with a heating means that is driven during the curing process.