KR20240043958A - 시냅틱 소자와 그 제조 방법 및 시냅틱 소자를 포함하는 뉴로모픽 소자 - Google Patents
시냅틱 소자와 그 제조 방법 및 시냅틱 소자를 포함하는 뉴로모픽 소자 Download PDFInfo
- Publication number
- KR20240043958A KR20240043958A KR1020220123065A KR20220123065A KR20240043958A KR 20240043958 A KR20240043958 A KR 20240043958A KR 1020220123065 A KR1020220123065 A KR 1020220123065A KR 20220123065 A KR20220123065 A KR 20220123065A KR 20240043958 A KR20240043958 A KR 20240043958A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- synaptic
- lithium
- synaptic device
- voltage
- Prior art date
Links
- 230000000946 synaptic effect Effects 0.000 title claims abstract description 189
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 102
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000012212 insulator Substances 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 25
- 229910052718 tin Inorganic materials 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 239000007784 solid electrolyte Substances 0.000 claims description 12
- 239000006104 solid solution Substances 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 229910010282 TiON Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 84
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 32
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 29
- 230000003313 weakening effect Effects 0.000 description 29
- 238000005728 strengthening Methods 0.000 description 25
- 230000008859 change Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 210000002569 neuron Anatomy 0.000 description 17
- 230000001242 postsynaptic effect Effects 0.000 description 13
- 210000000225 synapse Anatomy 0.000 description 13
- 239000005279 LLTO - Lithium Lanthanum Titanium Oxide Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052735 hafnium Inorganic materials 0.000 description 10
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 10
- 230000006399 behavior Effects 0.000 description 8
- 210000005215 presynaptic neuron Anatomy 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- ZOJZLMMAVKKSFE-UHFFFAOYSA-N [P]=S.[Li] Chemical compound [P]=S.[Li] ZOJZLMMAVKKSFE-UHFFFAOYSA-N 0.000 description 4
- 210000004556 brain Anatomy 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910000659 lithium lanthanum titanates (LLT) Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002641 lithium Chemical class 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 239000002858 neurotransmitter agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Artificial Intelligence (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- Computational Linguistics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Neurology (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220123065A KR20240043958A (ko) | 2022-09-28 | 2022-09-28 | 시냅틱 소자와 그 제조 방법 및 시냅틱 소자를 포함하는 뉴로모픽 소자 |
| PCT/KR2023/012887 WO2024071701A2 (fr) | 2022-09-28 | 2023-08-30 | Dispositif synaptique, son procédé de fabrication et dispositif neuromorphique comprenant un dispositif synaptique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220123065A KR20240043958A (ko) | 2022-09-28 | 2022-09-28 | 시냅틱 소자와 그 제조 방법 및 시냅틱 소자를 포함하는 뉴로모픽 소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240043958A true KR20240043958A (ko) | 2024-04-04 |
Family
ID=90478415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220123065A KR20240043958A (ko) | 2022-09-28 | 2022-09-28 | 시냅틱 소자와 그 제조 방법 및 시냅틱 소자를 포함하는 뉴로모픽 소자 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20240043958A (fr) |
| WO (1) | WO2024071701A2 (fr) |
-
2022
- 2022-09-28 KR KR1020220123065A patent/KR20240043958A/ko not_active Application Discontinuation
-
2023
- 2023-08-30 WO PCT/KR2023/012887 patent/WO2024071701A2/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024071701A2 (fr) | 2024-04-04 |
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| Date | Code | Title | Description |
|---|---|---|---|
| E902 | Notification of reason for refusal |