KR20240038312A - Substrate processing appraturs - Google Patents

Abstract

The present invention relates to a substrate processing apparatus including a coating layer. The apparatus for processing a substrate using plasma according to an embodiment of the present invention includes: a process chamber providing a processing space therein; a substrate support unit disposed in the processing space and configured to support a substrate; an ion blocker disposed above the substrate support unit and dividing the processing space into an upper area and a lower area; and a showerhead disposed below the ion blocker and dividing the lower region into a first region and a second region, wherein a coating layer for protecting the interior is formed in the lower region, and the coating layer is nickel or nickel. It is characterized by containing an alloy.

Description

Substrate Processing Apparatus {SUBSTRATE PROCESSING APPRATURS}

The present invention relates to a substrate processing device. More specifically, it relates to a substrate processing device that can suppress the generation of Al particles inside a process chamber by including a coating layer inside the device that processes substrates using plasma.

Fabrication of microelectronics or integrated circuit devices typically involves a complex process sequence requiring hundreds of individual steps performed on semiconductors, dielectrics and conductive substrates. Examples of these process steps include oxidation, diffusion, ion implantation, thin film deposition, cleaning, etching, and lithography. Among these, plasma processes using plasma are commonly used for thin film deposition and etching, and are performed in a plasma process chamber.

In chemical vapor deposition, by applying a voltage to suitable process gases, reactive species are created and subsequent chemical reactions lead to the formation of a thin film on the substrate. In a plasma etch process, previously deposited films are exposed to reactive species in the plasma etch process, often through a patterned mask layer formed in a previous lithography step. Reactions between the reactive species and the deposited film cause removal or etching of the deposited film.

When a process chamber is exposed to a plasma environment, degradation may occur due to reactions with plasma species. In this case, not only is the lifespan of the process chamber and its internal components shortened, but there is a high possibility that certain elements and contaminant particles are generated from the surface of the process chamber and its components, contaminating the process chamber. In particular, in the case of plasma equipment, plasma gas containing F and Cl is injected in a plasma atmosphere, so the inner wall of the process chamber and its internal parts are placed in a very corrosive environment. This corrosion shortens the lifespan of the process chamber and its internal components and causes deterioration in product quality due to increased element defects due to the generation of contaminants and particles.

Conventional plasma process chambers and internal parts are mainly made of stainless steel alloy or aluminum alloy. Since these alloys generally have low corrosion resistance, an alumina (Al2O3) coating film is formed on the metal surface by anodizing to ensure durability against plasma and chemical gases. However, the durability of the anodizing coating film is weak, so the surface coating film inside the process chamber is easily damaged and needs to be regenerated frequently, or particles generated from the damaged surface contaminate the process chamber.

In addition, these particles are causing problems such as stacking on the surface of the substrate or modifying the surface of the substrate, and these particles are detected even on substrates that have completed the process, increasing device defects.

Therefore, new technology is required to minimize particle generation due to the reaction between the process chamber and the plasma process gas.

Republic of Korea Patent Publication No. 10-2021-0115861 (2021.09.27)

The present invention is intended to solve the conventional problems, and seeks to provide a substrate processing device including a coating layer inside the process chamber to minimize Al particles generated inside the process chamber due to plasma process gas.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

An apparatus for processing a substrate using plasma according to an embodiment of the present invention, comprising: a process chamber providing a processing space therein; a substrate support unit disposed in the processing space and configured to support a substrate; an ion blocker disposed above the substrate support unit and dividing the processing space into an upper area and a lower area; and a showerhead disposed below the ion blocker and dividing the lower region into a first region and a second region, wherein a coating layer for protecting the interior is formed in the lower region, and the coating layer is nickel or nickel. May contain alloys.

In one embodiment, the coating layer may be formed by electroless plating.

In one embodiment, the second region may include a Y2O3 coating layer.

In one embodiment, the substrate processing apparatus includes a gas supply unit for supplying gas to the processing space; A high-frequency power module equipped with a high-frequency power source that provides high-frequency power; And it may further include a control unit for controlling the gas supply unit.

In one embodiment, the gas supply unit may include a first processing gas supply unit supplying a first processing gas to the upper region and a second processing gas supply unit supplying a second processing gas to the lower region. there is.

In one embodiment, the first processing gas may be a gas containing fluorine.

In one embodiment, the second processing gas may be a gas containing nitrogen and hydrogen.

In one embodiment, the upper region includes a region that receives the first processing gas and forms plasma; The first region of the lower region is a region where radicals in the plasma formed in the upper region react with the second processing gas to form a reaction gas; And the second area of the lower area may be an area that receives the reaction gas and performs a substrate processing process.

In one embodiment, the ion blocker may be formed with a spray hole for spraying radicals from the plasma formed in the upper region to the lower region.

In one embodiment, at least one of the ion blocker and the showerhead may be provided to be grounded.

In one embodiment, the control unit may control the gas supply amount depending on the area of the ion blocker and the showerhead.

According to the present invention, the processing space inside the process chamber is divided into a plurality of regions and a coating layer is formed inside the divided regions, thereby suppressing the generation of Al particles due to the reaction between the process chamber and the process gas.

In addition, by suppressing the generation of Al particles as described above, device defect problems can be improved and product yield can be improved.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the drawings below.

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of the coating layer formed in the substrate processing apparatus shown in FIG. 1.
Figure 3 is a diagram showing the amount of Al particles inside a process chamber coated with conventional anodizing.
Figure 4 is a diagram showing the amount of Al particles inside a nickel-coated process chamber according to an embodiment of the present invention.
Figure 5 is a cross-sectional view showing a gas supply area of a substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein.

In describing embodiments of the present invention, if it is judged that specific descriptions of related known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed descriptions will be omitted, and parts that perform similar functions and actions will be omitted. The same symbols will be used throughout the drawings.

At least some of the terms used in the specification are defined in consideration of the functions in the present invention and may vary depending on the user, operator intention, custom, etc. Therefore, the term should be interpreted based on the content throughout the specification.

Additionally, in this specification, singular forms also include plural forms unless specifically stated in the context. In the specification, when it is said that a certain component is included, this does not mean that other components are excluded, but that other components may be further included, unless specifically stated to the contrary.

Although terms such as 'first' and 'second' are used to distinguish one component from another, the scope of rights should not be limited by these terms. For example, a first component may be named a second component, and similarly, the second component may also be named a first component.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, identical or corresponding components will be assigned the same reference numbers regardless of the reference numerals, and overlapping elements will be assigned the same reference numbers. The explanation will be omitted.

A substrate processing apparatus according to an embodiment of the present invention will be described as an example of a substrate processing apparatus that dry cleans, cleans, or etches a substrate using plasma. However, the present invention is not limited to this, and can be applied to various processes as long as it is a device that processes a substrate using plasma.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 5.

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 includes a process chamber 100, a substrate support unit 200, an ion blocker 300, a showerhead 400, a gas supply unit 500, and a high frequency power module ( 600) and a control unit 700.

The process chamber 100 has a processing space where a plasma process is performed. This process chamber 100 may be provided with an exhaust port 102 at its lower portion. The exhaust port 102 may be connected to the exhaust line 112 on which the pump (P) is mounted. This exhaust port 102 can discharge reaction by-products generated during the plasma process and gas remaining inside the process chamber 100 to the outside of the process chamber 100 through the exhaust line 112. In this case, the internal space of the process chamber 100 may be depressurized to a predetermined pressure.

The process chamber 100 may have an opening 104 formed on its side wall. The opening 104 may function as a passage through which the substrate W enters and exits the process chamber 100 . This opening 104 may be configured to be opened and closed by a door assembly (not shown). A door assembly (not shown) may include an outer door, an inner door, and a connecting plate. An outer door may be provided on the outer wall of the process chamber 100. An inner door may be provided on the inner wall of the process chamber. The outer door and the inner door may be fixedly coupled to each other by a connecting plate. The connection plate may be provided to extend from the inside to the outside of the process chamber 100 through the opening. A door driver (not shown) can move the outer door in an up and down direction. The door actuator may operate using, for example, a motor, a hydraulic cylinder, or a pneumatic cylinder.

The baffle unit 120 serves to exhaust plasma process by-products, unreacted gas, etc. This baffle unit 120 may be installed between the inner wall of the process chamber 100 and the electrostatic chuck 210. The baffle unit 120 may be provided in an annular ring shape and may have a plurality of through holes penetrating in the vertical direction. The flow of process gas can be controlled depending on the number and shape of the through holes of the baffle unit 120.

The substrate support unit 200 may be disposed in the processing space of the process chamber 100 . This substrate support unit 200 can support the substrate W by electrostatic force. However, this embodiment is not limited to this, and the substrate can be supported in various ways, such as mechanical clamping and vacuum.

When supporting the substrate W using electrostatic force, the substrate support unit 200 may include an electrostatic chuck 210 including a base member 212 and a chucking member 214. The base member 212 supports the chucking member 214. For example, the base member 212 may be made of aluminum and may be provided as an aluminum base plate. The chucking member 214 supports the substrate W mounted on the top using electrostatic force. This chucking member 214 is made of ceramic components and can be provided as a ceramic plate or ceramic puck, and is coupled to the base member 212 to be fixed on the base member 212. It can be. A bonding layer may be formed between the base member 212 and the chucking member 214 formed thereon.

A heating member 216 and a cooling member 218 may be provided inside the base member 212 or the chucking member 214 to maintain the substrate W at the process temperature during the process. The heating member 216 may be provided as a heating wire, and the cooling member 218 may be provided as a cooling line through which a refrigerant flows.

The ring assembly 220 may be disposed at an edge area of the substrate support unit 200. The ring assembly 220 has a ring shape and may be arranged along the circumference of the electrostatic chuck 210. The ring assembly 220 may have a focus ring 222 and an insulating ring 224. The focus ring 222 is provided to surround the electrostatic chuck 210 and can focus plasma onto the substrate (W). The insulating ring 224 may be provided to surround the focus ring 222. Optionally, the ring assembly 220 may include an edge ring (not shown) provided in close contact with the periphery of the focus ring 222 to prevent the side of the electrostatic chuck 210 from being damaged by plasma. The focus ring 222 may be made of a silicon material, and the insulating ring 224 may be made of a quartz material. Unlike what was described above, the structure of the ring assembly 220 may be changed in various ways.

The ion blocker 300 is disposed above the substrate support unit 200 and can divide the processing space inside the process chamber 100 into an upper area (S10) and a lower area (S20). The ion blocker 300 can be manufactured using a silicon component, and can also be manufactured using a metal component. The ion blocker 300 may be provided in a plate shape, for example, may have a disk shape. A plurality of injection holes 300a may be formed in the ion blocker 300. The injection hole 300a may be formed to penetrate the ion blocker 300 in the vertical direction.

The showerhead 400 is disposed below the ion blocker 300 and may be installed opposite the substrate support unit 200. This shower head 400 may divide the lower area S20 into a first area S21 and a second area S22. The shower head 400 may be made of a silicone component, and may also be made of a metal component. The showerhead 400 may be provided in a plate shape, for example, may have a disk shape. A plurality of injection holes 400a may be formed in the showerhead 400 to supply gas to the second area S22.

Figure 2 is an enlarged cross-sectional view of a coating layer formed in a process chamber according to an embodiment of the present invention.

According to one embodiment of the present invention, the inner wall of the upper region S10 is coated with Y2O3. In addition, the first region S21 of the lower region S20 may be coated with nickel or a nickel alloy, and the second region S22 may have coating layers 140 and 160 formed of Y2O3 and nickel or a nickel alloy. . Coating layers 140 and 160 may be formed on the inner wall of the process chamber 100 to prevent particles from being generated by reacting with the process chamber 100 and the processing gas.

In the upper area S10, the inner wall of the process chamber 100 may be coated with Y2O3 140. Y2O3 (140) is a material with excellent plasma resistance properties, and the inner wall of the upper region (S10) where plasma is generated can be coated with Y2O3 (140). In addition, since the upper surface of the ion blocker 300, which divides the upper region (S10) and the lower region (S20), is in contact with the upper region (S10), the upper surface of the ion blocker 300 can also be coated with Y2O3 (140). there is. A plasma spray coating method may be used to coat Y2O3 (140), and it may be coated to a thickness of 100 to 200 μm. According to one embodiment of the present invention, Y2O3 (140) can be coated to a thickness of 150um.

According to an embodiment of the present invention, the reaction gas generated in the first region (S21) includes radicals that passed through the ion blocker 300 in the plasma generated from the first processing gas introduced into the first region (S21) and The second process gas may react to produce a reactive gas. The radicals generated from the first processing gas are fluorine radicals (F), and the second processing gas is NH3. A reaction gas, NH4F, is generated due to a reaction between fluorine radicals (F) and the second treatment gas.

[Table 1] is a table calculating the reaction energy of the reaction gas formed in the first region S21 and the materials and coating layers forming the process chamber 100.

[Table 1]

Referring to [Table 1], in the case of the aluminum-containing material (Al) and anodizing (Al2O3) that make up the conventional process chamber 100, AlF3 is generated by reacting with the reaction gas. In other words, when Al and NH4F react, AlF3 is generated, and the reaction energy at this time is -1315.6 KJ/mol. Additionally, when anodizing (Al2O3) and NH4F react, AlF3 is generated, and the reaction energy at this time is -1686.8 KJ/mol.

In the case of Y2O3 coated on the upper region (S10), YF3 is generated by reacting with the reaction gas. In other words, when Y2O3 and NH4F react, YF3 is generated, and the reaction energy at this time is -1871 KJ/mol, which is the highest reaction energy. This means that Y2O3 and NH4F3 react actively and generate many particles inside the process chamber 100, so it is not desirable to coat the first region S21 with Y2O3.

In the case of nickel (Ni), NiF2 is generated by reacting with the reaction gas. That is, when nickel and NH4F react, NiF2 is generated, and the reaction energy at this time is -540.4 KJ/mol. It can be seen that nickel has the lowest reaction energy when reacted with the reaction gas.

Based on this, it is desirable to form a nickel coating layer with the lowest reaction energy in the first region S21.

Based on the above results, the coating layer 160 may be formed on the inner wall of the first region S21 of the lower region S20 of the process chamber 100 using nickel or a nickel alloy. In addition, a nickel coating layer 160 may also be formed on the lower surface of the ion blocker 300 in contact with the first region S21. A nickel coating layer 160 may be formed on the upper surface of the showerhead 400 dividing the first area S21 and the second area S22 in the lower area S20. This coating layer 160 can be formed using an electroless plating method.

In order to improve the adhesion of the nickel coating layer to the inner wall of the process chamber 100, it is desirable to completely remove surface materials such as an oxide film or grease before plating the surface of the process chamber 100.

The principle of the electroless plating method for forming the nickel coating layer 160 is plating by catalytic reduction, and the basic ingredients are hypophosphite (H2PO2) as a reducing agent, nickel salt as a nickel ion source, and plating solution to maintain the pH of the plating solution at a constant value. It may contain buffering agents and other reaction accelerators. In some cases, the buffer material may play a role in precipitating nickel ions. In addition to the above ingredients, small amounts of anti-decomposition agents, brighteners, etc. may be used as needed.

The basic principle of coating nickel using electroless plating is based on the reaction that nickel salt and hypophosphite (H2PO2) react in water to generate hydrogen, causing an oxidation-reduction reaction and precipitating reduced nickel.

The exemplified method includes the steps of washing the metal product with water (warm water), electrolytic degreasing of the washed metal product, activating and washing the metal product, plating in an electrolyte solution, washing the metal product with water to prevent discoloration, drying step, and drying the metal product. By including a heat treatment step performed at 380°C to 430°C for 1 hour, the nickel coating layer 160 can be formed and may have a thickness of 10 to 40 μm. According to one embodiment of the present invention, the nickel coating layer 160 may have a thickness of about 25 μm.

In the second area of the lower area of the process chamber, both the Y2O3 coating layer 140 and the nickel coating layer 160 may be formed. According to an embodiment of the present invention, the inner wall of the second region S22 forms the Y2O3 coating layer 140, and the lower surface of the shower head 400 and the upper surface of the electrostatic chuck 210 of the substrate support unit 200 are A nickel coating layer 160 may be formed.

By forming the Y2O3 coating layer 140 and the nickel coating layer 160 as described above on the aluminum-containing materials forming the process chamber 100, the strength of the inner wall of the process chamber 100 is strengthened and the process due to the plasma process gas is strengthened. The generation of particles in the chamber 100 can be minimized. Forming the nickel coating layer 160 on the inner wall of the process chamber 100 using an electroless plating method according to an embodiment of the present invention has been described, but the present invention is not limited thereto.

Figures 3 and 4 are diagrams showing the amount of Al particles inside the process chamber using inductively coupled plasma mass spectrometry (ICP-MS) after performing one cycle of the plasma process.

Figure 3 is a diagram showing the detection of the amount of Al particles inside a process chamber coated with conventional anodizing, and Figure 4 is a diagram showing the detection of the amount of Al particles inside a process chamber coated with nickel according to an embodiment of the present invention. It is a drawing.

Referring to Figures 3 and 4, in the present invention, inductively coupled plasma-mass spectrometry (ICP-MS) was used to confirm the amount of particles inside the process chamber. As a result, it can be confirmed that in the case of a process chamber coated with conventional anodizing, Al particles of 0.01 to 42 E10 atoms/cm3 are detected.

However, in the case of a process chamber in which a nickel coating layer is formed according to an embodiment of the present invention, Al particles of 0.01 to 0.48 E10 atoms/cm3 are detected, and the amount of Al particles is about 1/3 compared to a process chamber coated with conventional anodizing. You can see that it is reduced to about 100.

For this reason, by coating the inner wall and internal components of the process chamber 100 with nickel, defective substrates due to Al particles can be reduced and product yield can be improved.

Referring again to FIG. 1 , the gas supply unit 500 may supply gas necessary for processing the substrate W to the process chamber 100 . The gas supply unit 500 according to an embodiment of the present invention may be composed of a first processing gas supply unit 500a and a second processing gas supply unit 500b.

The first processing gas supply unit 500a includes a first gas source 520a and a first gas supply line 522a, and the first gas supply line 522a has a gas supply line 522a for controlling the flow rate of the gas supplied. It may include valves 524a and 526a. The first gas source 520a may store first gas. The first gas according to an embodiment of the present invention is a gas containing a fluorine component and may be, for example, NF3.

The first gas supply line 522a is provided as a fluid passage connecting the first gas source 520a and the process chamber 100. The first gas supply line 522a supplies the first gas stored in the first gas source 520a to the internal space of the process chamber 100. Specifically, the first gas supply line 522a may supply the first gas to the upper region S10.

The first processing gas supply unit 500a includes a second gas source 540a that supplies a second gas different from the first gas or a first gas and a second gas in order to further supply a gas mixed with the first gas. It may further include a third gas source 560a that supplies a different third gas. The second gas source 540a is connected to the first gas supply line 522a through the second gas supply line 542a. The third gas supply source 560a is connected to the first gas supply line 522a through the third gas supply line 562a. A gas valve 544a may be installed in the second gas supply line 542a. A gas valve 564a may be installed in the third gas supply line 562a. The second gas may be an inert gas. For example, the second gas may be argon (Ar). The third gas may be a different type of inert gas than the second gas. As an example, the third gas may be helium (He). The first processing gas may be defined by a combination of the first gas and any one or more of the second gas and the third gas. Alternatively, the first gas may be defined solely as the first process gas. The first processing gas may be a mixed gas in which additional gases are mixed in addition to the presented embodiments.

The second processing gas supply unit 500b may supply the second processing gas to the first region S21 of the lower region S20. In the lower region S20, radicals generated from the first processing gas may react with the second processing gas to generate a reaction gas.

The second processing gas supply unit 500b may include a fourth gas source 520b and a fourth gas supply line 522b. A gas valve 524b may be installed in the fourth gas supply line 522b. The fourth gas source 520b stores the fourth gas. The fourth gas may be a nitrogen- or hydrogen-containing gas, for example, NH3.

The fourth gas supply line 522b serves as a fluid passage connecting the fourth gas source 520b and the process chamber 100. The fourth gas supply line 522b may supply the fourth gas stored in the fourth gas source 520b to the internal space of the process chamber 100. Specifically, the fourth gas supply line 522b may supply the fourth gas to the first area S21 of the lower area S20.

The second processing gas supply unit 500b may further include a fifth gas supply source 540b that supplies a fifth gas different from the fourth gas to further supply a gas mixed with the fourth gas. The fifth gas supply source 540b is connected to the fourth gas supply line 522b through the fifth gas supply line 542b. A gas valve 544b for controlling the flow rate may be installed in the fifth gas supply line 542b. The fifth gas may be a nitrogen- or hydrogen-containing gas, for example, H2.

The second processing gas may be defined by a combination of the fourth gas and the fifth gas. Alternatively, the fourth gas alone may be defined as the second processing gas. The second processing gas may be a mixed gas in which additional gases are mixed in addition to the presented embodiments. Although not shown, the first processing gas supply unit 500a and the second processing gas supply unit 500b may include a heating member for heating the processing gas.

According to one embodiment of the present invention, it may be provided as a capacitively coupled plasma (CCP) source. A high-frequency power module 600 may be connected to the process chamber 100 to generate plasma. However, it is not limited to this embodiment, and plasma can be generated using an inductively coupled plasma (ICP) source.

An upper electrode 660 may be formed on the upper part of the process chamber 100, and a high-frequency power source 620 and an impedance matcher 640 may be connected. The ion blocker 300 and showerhead 400 may be grounded. The electromagnetic field generated between the upper electrode 660 and the ion blocker 300 excites the first processing gas provided into the upper region S10 into a plasma state. The first processing gas introduced into the upper region S10 transitions to a plasma state. As the first processing gas transitions to a plasma state, it is decomposed into ions, electrons, and radicals. The generated radical components pass through the ion blocker 300 and move to the first region S21 of the lower region S20, and ions and electrons are absorbed into the ion blocker 300.

The second processing gas supplied to the first area S21 reacts with the plasma generated from the first processing gas introduced into the first area S21 to generate a reaction gas. More specifically, radicals that have passed through the ion blocker 300 in the plasma generated from the first processing gas may react with the second processing gas to generate a reactive gas. For example, the radicals in the plasma generated from the first processing gas are fluorine radicals (F), the second processing gas is NH3, and the reactive gas is NH4FHF (Ammonium Hydrogen Fluoride) and/or NH4F (Ammonium Fluoride).

The control unit 700 may control the plasma density supplied to the gas supply unit 500, the ion blocker 300, and the showerhead 400. The control unit 700 may control the supply amount of the first processing gas supplied to the upper region S10.

Figure 5 is a cross-sectional view showing a gas supply area of a substrate processing apparatus according to an embodiment of the present invention. According to one embodiment of the present invention, the gas supply area may be the ion blocker 300 and the showerhead 400.

Referring to FIG. 5, the ion blocker 300 and the showerhead 400 can be divided into a center area (A) and an edge area (B), and the supply amount of processing gas can be controlled.

Additionally, the control unit 700 may control the density of plasma when supplying the plasma generated in the upper region S10 to the lower region S20. For example, the density of plasma generated in the center area (A) can be controlled to be higher than the density of plasma generated in the edge area (B). In this case, since the amount of radicals supplied to the first region (S21) corresponding to the center region (A) is greater than the amount of radicals supplied to the edge region (B), the reaction gas generated in the center region (A) The amount is greater than the amount of reaction gas generated in the edge area (B). As a result, the amount of reaction gas supplied to the substrate W corresponding to the center area A may be greater than the amount of reaction gas supplied to the substrate W corresponding to the edge area B, and the amount of reaction gas supplied to the substrate W corresponding to the center area A can be increased. ) can be controlled to vary the degree of processing for each area.

The above description is merely an illustrative explanation of the technical idea of the present invention, and various modifications and variations will be possible to those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are not intended to limit the technical idea of the present invention, but are for illustrative purposes, and the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

W: substrate
10: Substrate processing device
100: process chamber
200: substrate support unit
300: Ion Blocker
400: shower head
500: gas supply unit
600: High frequency module
700: control unit

Claims (10)

In a device for processing a substrate using plasma,
a process chamber providing a processing space therein;
a substrate support unit disposed in the processing space and configured to support a substrate;
an ion blocker disposed above the substrate support unit and dividing the processing space into an upper area and a lower area; and
a showerhead disposed below the ion blocker and dividing the lower area into a first area and a second area;
Including,
A coating layer is formed in the lower area to protect the interior,
A substrate processing device, wherein the coating layer contains nickel or a nickel alloy.
According to paragraph 1,
The coating layer is,
A substrate processing device characterized in that it is formed by an electroless plating method.
According to paragraph 1,
The second area is,
A substrate processing device comprising a Y2O3 coating layer.
According to paragraph 1,
The substrate processing device,
a gas supply unit for supplying gas to the processing space;
A high-frequency power module equipped with a high-frequency power source that provides high-frequency power; and
a control unit for controlling the gas supply unit;
A substrate processing device further comprising:
According to clause 4,
The gas supply unit is,
a first process gas supply unit supplying a first process gas to the upper region;
A substrate processing apparatus comprising a second processing gas supply unit supplying a second processing gas to the lower region.
According to clause 5,
The first processing gas is,
A substrate processing device characterized in that the gas contains fluorine.
According to clause 5,
The second processing gas is,
A substrate processing device characterized in that the gas contains nitrogen and hydrogen.
According to paragraph 1,
The upper region includes a region that receives the first processing gas and forms plasma;
The first region of the lower region is a region where radicals in the plasma formed in the upper region react with the second processing gas to form a reaction gas; and
The second area of the lower area is an area where the reaction gas is supplied and a substrate processing process is performed.
According to clause 8,
The ion blocker is,
A substrate processing device characterized in that a spray hole is formed for spraying radicals from the plasma formed in the upper region to the lower region.
According to paragraph 1,
A substrate processing device, characterized in that the ion blocker is provided to be grounded.