KR20240012308A - Substrate processing apparatus, substrate holding apparatus and substrate holding method - Google Patents

Abstract

A substrate processing apparatus, a substrate holding apparatus, and a substrate holding method capable of suitably holding a substrate on the outer peripheral surface of a rotating drum are provided.
A cylindrical or cylindrical rotating drum having a rotation axis extending in the longitudinal direction, a bipolar electrostatic chuck disposed on the outer peripheral surface of the rotating drum, and opposite ends of the outer peripheral surface of the rotating drum, respectively, advance and retreat toward the outer peripheral surface of the rotating drum. A substrate processing apparatus comprising at least two side pressing mechanisms having possible pressing pins.

Description

Substrate processing device, substrate holding device and substrate holding method {SUBSTRATE PROCESSING APPARATUS, SUBSTRATE HOLDING APPARATUS AND SUBSTRATE HOLDING METHOD}

The present disclosure relates to a substrate processing apparatus, a substrate holding device, and a substrate holding method.

Patent Document 1 discloses a mask holding device that holds a flexible sheet-shaped mask substrate by winding it in the shape of a cylindrical surface.

Japanese Patent Publication No. 2018-148217

In one aspect, the present disclosure provides a substrate processing apparatus, a substrate holding apparatus, and a substrate holding method that can suitably hold a substrate on the outer peripheral surface of a rotating drum.

In order to solve the above problem, according to one aspect, there is provided a cylindrical or cylindrical rotating drum having a rotation axis extending in the longitudinal direction, a bipolar electrostatic chuck disposed on the outer peripheral surface of the rotating drum, and each of both ends of the outer peripheral surface of the rotating drum. A substrate processing apparatus is provided, comprising at least two side pressing mechanisms facing each other and having pressing pins capable of advancing and retreating toward the outer peripheral surface of the rotating drum.

According to one aspect, a substrate processing apparatus, a substrate holding apparatus, and a substrate holding method capable of suitably holding a substrate on the outer peripheral surface of a rotating drum can be provided.

1 is an example of a cross-sectional schematic diagram showing the configuration of a substrate processing system.
Figure 2 is another example of a cross-sectional schematic diagram showing the configuration of a substrate processing system.
Fig. 3 is an example of a schematic diagram of a rotating drum as seen from the direction of the rotation axis of the rotating drum.
Fig. 4 is an example of a diagram showing the electrode arrangement of a bipolar electrostatic chuck.
Figure 5 is another example of a diagram showing the electrode arrangement of a bipolar electrostatic chuck.
Fig. 6 is an example of a perspective view showing the substrate holding portion, the side pressing mechanism, and the edge pressing mechanism.
Fig. 7 is an example of a substrate holding support portion viewed from the direction of the rotation axis of the drum.
Fig. 8 is an example of a cross-sectional view of the side pressing mechanism seen from the direction of the rotation axis of the drum.
Fig. 9 is an example of an edge pressing mechanism seen from the direction of the rotation axis of the drum.
10 is a flowchart showing an example of the operation of the substrate processing apparatus.
Fig. 11 is an example of a schematic diagram showing the relationship between a rotating drum and a substrate.
Figure 12 is an example of a schematic diagram showing adsorption of a substrate.
13 is an example of a perspective view showing the configuration of another substrate processing system.
Fig. 14 is an example of a perspective view showing a rotating drum and a substrate holding portion.
Fig. 15 is an example of a schematic diagram showing a rotating drum and a substrate holding portion viewed from the direction of the rotating axis of the rotating drum.
Fig. 16 is an example of a schematic diagram showing a rotating drum and a substrate holding portion viewed from above the rotating drum.

Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and redundant descriptions may be omitted.

The substrate processing system 1 according to the present embodiment will be described using FIG. 1. 1 is an example of a cross-sectional schematic diagram showing the configuration of the substrate processing system 1. 1 is a cross-sectional view seen in the direction of the rotation axis of the rotating drum 5. An example of the rotation direction of the rotary drum 5 is indicated by an arrow. Additionally, as an example, a case where a SiN film is formed on a substrate G by the substrate processing system 1 will be described.

The substrate processing system 1 shown in FIG. 1 includes a substrate processing apparatus 100 according to the first embodiment, a load lock chamber 200, and a control unit 900.

Here, the substrate G to be processed in the substrate processing system 1 is a flexible substrate that has a rectangular shape in plan view. The substrate G may be, for example, a flexible rectangular glass substrate. Additionally, the substrate G may be, for example, a thin glass substrate having a thickness of about 0.1 mm to several mm. Additionally, the substrate G, for example, may have a planar dimension ranging from a dimension of approximately 730 mm x 920 mm in the 4.5 generation to a dimension of approximately 3000 mm x 3400 mm in the 10.5 generation.

The load lock chamber 200 is connected to an atmospheric transfer chamber (not shown) through a gate valve (not shown). Additionally, the load lock chamber 200 can be raised and lowered in the vertical direction and has a loading portion (not shown) that accommodates a plurality of substrates G in the height direction. Additionally, the load lock chamber 200 is connected to the substrate processing apparatus 100 in a vacuum atmosphere through the gate valve 210. Additionally, the load lock chamber 200 is configured to switch between an atmospheric atmosphere and a vacuum atmosphere.

The substrate processing apparatus 100 includes a rotating drum 5 and a main body 41 that accommodates the rotating drum 5.

The rotating drum 5 is formed in a cylindrical or cylindrical shape with a rotation axis extending in the longitudinal direction, and is configured to adsorb and hold the substrate G on the outer peripheral surface (cylindrical surface, holding side) parallel to the rotation axis. . Additionally, the circumferential length of the outer peripheral surface of the rotary drum 5 is formed to be longer than the length of the substrate G. As a result, the rotary drum 5 can adsorb and hold the substrate G without overlapping both ends of the same substrate G in the circumferential direction, and the rotary drum 5 is formed to be capable of adsorbing a plurality of substrates G in the circumferential direction. It is done.

Here, the rotary drum 5 will be explained using FIGS. 3 and 4. FIG. 3 is an example of a schematic diagram of the rotary drum 5 seen from the direction of the rotation axis of the rotary drum 5. FIG. 4 is an example of a diagram showing the arrangement of the electrodes 51 and 52 of the bipolar electrostatic chuck 50. 4(a) is an example of a view showing the arrangement of the electrodes 51 and 52 of the bipolar electrostatic chuck 50 when the rotary drum 5 is viewed from the outer peripheral surface side. FIG. 4(b) shows the electrodes 51 and 52 of the bipolar electrostatic chuck 50 at the position A-A in FIG. 4(a) when the rotary drum 5 is viewed from the axial direction of the rotary drum 5. This is an example of a drawing showing the layout.

In Fig. 4, a bipolar electrostatic chuck 50 for electrostatically adsorbing the substrate G is disposed on the outer peripheral surface of the rotating drum 5. The bipolar electrostatic chuck 50 has a pair of electrodes 51 and 52. The electrode 51 has a base 51a and a comb-tooth portion 51b extending from the base 51a, and is formed on the outer peripheral surface of the rotary drum 5 in a comb-tooth shape extending from one end of the rotary drum 5. . The electrode 52 has a base 52a and a comb-tooth portion 52b extending from the base, and is formed on the outer peripheral surface of the rotary drum 5 in a comb-tooth shape extending from the other end of the rotary drum 5. Then, the electrodes 51 and 52 are arranged to face each other, and in the circumferential direction of the rotary drum 5, the comb teeth 51b and comb teeth 52b are alternately arranged adjacent to each other. Opposite polarity voltages are applied to the electrodes 51 and 52 from a power source (not shown). A power source (not shown) applies a positive voltage to the comb teeth 51b through the base 51a. Additionally, a power source (not shown) applies a negative voltage to the comb teeth 52b through the base 52a. Additionally, a plurality of bipolar electrostatic chucks 50 may be provided on the outer peripheral surface of the rotary drum 5. FIG. 4 shows an example of a pair of electrodes 51 and 52 in one dipole electrostatic chuck 50 among the plurality of dipole electrostatic chucks 50.

In addition, the arrangement of the electrodes 51 and 52 is not limited to the example shown in FIG. 4. FIG. 5 is another example of a diagram showing the arrangement of the electrodes 51 and 52 of the bipolar electrostatic chuck 50. 5(a) is an example of a view showing the arrangement of the electrodes 51 and 52 of the bipolar electrostatic chuck 50 when the rotary drum 5 is viewed from the outer peripheral surface side. FIG. 5(b) shows the electrodes 51 and 52 of the bipolar electrostatic chuck 50 at the position B-B in FIG. 5(a) when the rotary drum 5 is viewed from the axial direction of the rotary drum 5. This is an example of a drawing showing the layout. FIG. 5(c) shows the electrodes 51 and 52 of the bipolar electrostatic chuck 50 at the position C-C of FIG. 5(a) when the rotary drum 5 is viewed from the axial direction of the rotary drum 5. This is an example of a drawing showing the layout.

Here, the bipolar electrostatic chuck 50 shown in FIG. 4 has a comb-tooth-shaped electrode 51 and a comb-tooth-shaped electrode 52. Additionally, the comb teeth 51b of the electrode 51 and the comb teeth 52b of the electrode 52 are alternately arranged in the circumferential direction of the rotary drum 5. Additionally, the electrodes 51 and 52 are arranged in a shape where the comb teeth 51b and 52b extend along the axial direction of the rotating drum 5.

On the other hand, the bipolar electrostatic chuck 50 shown in FIG. 5 has a comb-tooth-shaped electrode 51 and a comb-tooth-shaped electrode 52. Additionally, the comb teeth 51b of the electrode 51 and the comb teeth 52b of the electrode 52 may be alternately arranged in a direction parallel to the rotation axis of the rotary drum 5. Additionally, the electrodes 51 and 52 may be arranged in a shape where the comb teeth 51b and 52b extend along the circumferential direction of the rotating drum 5.

In addition, as shown in FIGS. 1 and 3, on the outer peripheral surface of the rotary drum 5, there is a substrate holding portion 10 that holds the front side edge of the substrate G when the substrate G is wound around the outer peripheral surface of the rotary drum 5. ) is provided. In addition, the substrate holding portion 10 will be described later using FIG. 6 and the like.

Additionally, the outer peripheral surface of the rotary drum 5 may be configured so that a plurality of substrates G can be held in the circumferential direction of the rotary drum 5. In this case, a plurality of substrate holding portions 10 and a plurality of bipolar electrostatic chucks 50 may be provided depending on the number of substrates G held by the rotating drum 5.

As shown in FIG. 1, the main body portion 41 includes a drum chamber 42, a raw material gas adsorption chamber 43, a plasma reaction chamber 44, a purge gas chamber 45, an exhaust portion 46, and , has a conveyance path 47.

The drum chamber 42 is a cylindrical space formed within the main body 41, and is formed so that the rotating drum 5 holding the substrate G can rotate within the drum chamber 42.

The raw material gas adsorption chamber 43 is formed radially outward from the inner wall of the drum chamber 42, opposing the outer peripheral surface of the rotating drum 5. Additionally, the raw material gas adsorption chamber 43 is an elongated space oriented longitudinally in a direction parallel to the rotation axis of the rotary drum 5. Raw material gas is supplied to the raw material gas adsorption chamber 43 from the raw material gas supply part 61. As the raw material gas, for example, trisilylamine (TSA:N(SiH ₃ ) ₃ ) can be used.

The plasma reaction chamber 44 is formed radially outward from the inner wall of the drum chamber 42 opposite to the outer peripheral surface of the rotary drum 5, and is connected to the raw material gas adsorption chamber 43 in the rotation direction of the rotary drum 5. is formed in a different location. Additionally, the plasma reaction chamber 44 is an elongated space oriented longitudinally in a direction parallel to the rotation axis of the rotating drum 5. Inside the plasma reaction chamber 44, plasma of the reaction gas is generated by the plasma generation unit 7. As the reaction gas, for example, N ₂ gas can be used.

The purge gas chamber 45 is formed radially outward from the inner wall of the drum chamber 42 opposite to the outer peripheral surface of the rotary drum 5, and is connected to the raw material gas adsorption chamber 43 and the plasma in the rotation direction of the rotary drum 5. It is formed between the reaction chambers 44. Additionally, the purge gas chamber 45 is an elongated space oriented longitudinally in a direction parallel to the rotation axis of the rotating drum 5. The purge gas chamber 45 is supplied with purge gas from the purge gas supply unit 63. As the purge gas, for example, Ar gas can be used.

The exhaust portion 46 is formed radially outward from the inner wall of the drum chamber 42 opposite to the outer peripheral surface of the rotary drum 5, and is used to purge the raw material gas adsorption chamber 43 in the rotation direction of the rotary drum 5. It is formed between the gas chamber 45 and between the plasma reaction chamber 44 and the purge gas chamber 45. Additionally, the exhaust portion 46 is an elongated space oriented longitudinally in a direction parallel to the rotation axis of the rotating drum 5. The exhaust unit 46 is connected to an exhaust device (not shown), and the gas in the exhaust unit 46 is exhausted out of the substrate processing apparatus 100 .

Additionally, the substrate processing apparatus 100 includes a plasma generation unit 7. The plasma generation unit 7 has a metal window 70, an inductively coupled antenna 73, a high-frequency power source 74, and a case 75. The plasma generation unit 7 forms an induced electric field by the metal window 70 and the inductively coupled antenna 73, and generates plasma by the induced electric field from the reactive gas (plasma material gas).

The metal window 70 has a conductor plate 71 and a shower plate 72. The conductor plate 71 and the shower plate 72 are both non-magnetic and conductive, and are formed of a metal that has been subjected to corrosion-resistant surface processing, or a corrosion-resistant metal such as aluminum, aluminum alloy, or stainless steel. Surface processing with corrosion resistance includes, for example, anodizing treatment or ceramic spraying. Additionally, the lower surface of the shower plate 72 facing the plasma reaction chamber 44 may be subjected to anti-plasma coating by anodizing or ceramic spraying. The conductor plate 71 may be grounded through a ground wire (not shown). The shower plate 72 and the conductor plate 71 are joined so as to conduct each other.

Additionally, a gas supply chamber 76 is formed between the conductor plate 71 and the shower plate 72, and a reaction gas is supplied from the reaction gas supply unit 62. As the reaction gas, for example, N ₂ gas can be used. The reaction gas supplied from the reaction gas supply unit 62 is supplied from the gas supply chamber 76 to the plasma reaction chamber 44 through the gas discharge hole 72a of the shower plate 72.

Above the metal window 70, a spacer (not shown) formed of an insulating member is disposed, and an inductively coupled antenna 73 is disposed spaced apart from the conductor plate 71 by the spacer. The inductively coupled antenna 73 has a plurality of straight antenna wires made of a conductive metal such as copper arranged in parallel in a direction parallel to the rotation axis of the rotating drum 5 in a plane parallel to the metal window 70. It is formed by doing Alternatively, by arranging the bottom of the vertically wound rectangular coil in a plane parallel to the metal window 70, the antenna wire constituting the bottom of the vertically wound rectangular coil may be used as a plurality of straight antennas arranged in parallel. In addition, rather than being configured with a straight antenna line, the antenna line may be configured as a rectangular coil antenna in which the antenna line is wound in a spiral or ring shape in a plane parallel to the metal window 70, for example, a plurality of ring antennas. You can place multiple lines in parallel.

Additionally, the inductively coupled antenna 73 is connected to a high-frequency power source 74. When high frequency power of, for example, 13.56 MHz is applied to the inductively coupled antenna 73 from the high frequency power source 74, an induced current is induced in the metal window 70, and the induced current induced in the metal window 70 causes , an induced electric field is formed within the plasma reaction chamber 44. Due to this induced electric field, the reaction gas supplied from the shower plate 72 to the plasma reaction chamber 44 is converted into plasma, thereby generating an inductively coupled plasma.

Case 75 accommodates metal window 70 and inductively coupled antenna 73.

The transfer path 47 is a transport path for transporting the substrate G between the load lock chamber 200 and the drum chamber 42. In the example shown in FIG. 1, the transfer path 47 is configured to communicate the load lock chamber 200 and the plasma reaction chamber 44. Additionally, a transport roller 220 for transporting the substrate G is provided in the load lock chamber 200 and the transport path 47. As a result, the substrate G is transported from the load lock chamber 200 to the drum chamber 42 through the conveyance path 47 and the plasma reaction chamber 44, and is adsorbed on the outer peripheral surface of the rotating drum 5. Additionally, the substrate G detached from the outer peripheral surface of the rotating drum 5 is transported to the load lock chamber 200 through the plasma reaction chamber 44 and the transport path 47.

Additionally, the substrate processing apparatus 100 has a side pressing mechanism 20 that presses both sides of the substrate G toward the rotary drum 5 when wrapping the substrate G around the outer peripheral surface of the rotary drum 5 . Additionally, when winding the substrate G around the outer peripheral surface of the rotary drum 5, there is an edge pressing mechanism 30 that presses the rear side edge of the substrate G toward the rotary drum 5. In addition, the side pressing mechanism 20 and the edge pressing mechanism 30 will be described later using FIG. 6 and the like. In addition, in the substrate G, the portion of the side on the front side in the traveling direction when transporting the substrate G from the load lock chamber 200 to the drum chamber 42 is called the front side edge of the substrate G, and the portion on both sides along the traveling direction is called the front side of the substrate G. The explanation will be made by assuming that the side portions are referred to as both sides of the substrate G, and the side portions on the rear side in the traveling direction are referred to as the rear side edges of the substrate G. In other words, the front and rear edges of the substrate G adsorbed on the rotary drum 5 are portions parallel to the rotation axis of the rotary drum 5, and the both sides of the substrate G adsorbed on the rotary drum 5 are It is a portion along the rotation direction of the rotating drum (5).

In addition, in the configuration of the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, the edge pressing mechanism 30 is provided ahead of the side pressing mechanism 20 when viewed from the side of the conveyance path 47. . However, the position where the side pressing mechanism 20 and the edge pressing mechanism 30 are provided is not limited to the configuration shown in FIG. 1 .

FIG. 2 is another example of a cross-sectional schematic diagram showing the configuration of the substrate processing system 1A. The substrate processing system 1A shown in FIG. 2 includes a substrate processing apparatus 100A according to the second embodiment, a load lock chamber 200, and a control unit 900. In the configuration of the substrate processing apparatus 100A according to the second embodiment, the edge pressing mechanism 30 is provided inside the side pressing mechanism 20 when viewed from the conveyance path 47 side. The other configurations of the substrate processing apparatus 100A according to the second embodiment shown in FIG. 2 are the same as those of the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, and overlapping descriptions are omitted.

Returning to FIG. 1, the control unit 900 controls each component of the substrate processing system 1. The control unit 900 has a Central Processing Unit (CPU), Read Only Memory (ROM), and Random Access Memory (RAM). The CPU executes predetermined processing according to a recipe stored in a storage area of RAM or ROM.

Next, the film forming process using the substrate processing apparatuses 100 and 100A will be described. By rotating the rotary drum 5, the substrate G held on the outer peripheral surface of the rotary drum 5 is formed into a raw material gas adsorption chamber 43, an exhaust portion 46, a purge gas chamber 45, an exhaust portion 46, It passes through the plasma reaction chamber 44, the exhaust unit 46, the purge gas chamber 45, and the exhaust unit 46 in that order. Accordingly, the substrate processing apparatus 100, 100A forms a SiN film on the substrate G by the ALD (Atomic Layer Deposition) method in a processing vessel under reduced pressure.

By rotating the rotary drum 5, the substrate G is transported to the raw material gas adsorption chamber 43. The raw material gas is adsorbed on the surface of the substrate G in the raw material gas adsorption chamber 43.

Next, the substrate G is transported to the purge gas chamber 45. In the purge gas chamber 45, excess raw material gas, etc. that remains on the substrate G and is not involved in adsorption to the surface of the substrate G is purged.

Next, the substrate G is transported to the plasma reaction chamber 44. In the plasma reaction chamber 44, a SiN film is deposited by reacting the raw material gas adsorbed on the surface of the substrate G with the reaction gas converted into plasma.

Next, the substrate G is transported to the purge gas chamber 45. In the purge gas chamber 45, excess reaction gas, etc. that does not contribute to the reaction and remains on the substrate G is removed by purging.

As a result, one ALD cycle is performed on the substrate G, and one layer of SiN film is deposited. Then, the rotary drum 5 is rotated and the ALD cycle is repeated until a predetermined film thickness is reached, thereby forming a SiN film on the substrate G.

Here, as a combination of the raw material gas and the reaction gas, in addition to the above, the following combinations can be used, for example. The raw material gas may be dichlorosilane (DCS: SiH ₂ Cl ₂ ), and the reaction gas may be a combination of N ₂ or NH ₃ . Additionally, a combination of monochlorosilane (MCS: SiH ₃ Cl) as the raw material gas and N ₂ or NH ₃ as the reaction gas may be used. Additionally, a combination of trisilylamine (TSA:N(SiH ₃ ) ₃ ) may be used as the raw material gas, and N ₂ or NH ₃ may be used as the reaction gas. Additionally, a combination of silicon fluoride (SiF ₄ ) as the raw material gas and N ₂ as the reaction gas can be used. By combining these gases, a SiN film can be formed at a low temperature of 100°C or lower. As a result, a SiN film can be formed at low temperature on a device with low heat resistance (for example, OLED).

Furthermore, the raw material gas is more preferably one of dichlorosilane, monochlorosilane, and trisilylamine, which are polar gases. As a result, the raw material gas can be suitably adsorbed to the surface of the substrate G.

In addition, in the substrate processing apparatuses 100 and 100A shown in FIGS. 1 and 2, one raw material gas adsorption chamber 43 and one plasma reaction chamber 44 are provided, and each time the rotary drum 5 rotates, Although the substrate processing apparatus 100, 100A, in which one ALD cycle is performed, has been described as an example, the present invention is not limited thereto. Raw material gas adsorption chamber 43, exhaust portion 46, purge gas chamber 45, exhaust portion 46, plasma reaction chamber 44, exhaust portion 46, purge gas chamber 45, exhaust portion 46 As one tank, a plurality of tanks may be provided in the main body portion 41 according to the rotation of the rotary drum 5. According to this configuration, multiple ALD cycles are executed each time the rotary drum 5 rotates once. As a result, the SiN film formation speed can be improved and the productivity of the substrate processing systems 1 and 1A can be improved.

Next, the substrate holding portion 10, the side pressing mechanism 20, and the edge pressing mechanism 30 are explained using Figs. 6 to 9. FIG. 6 is an example of a perspective view showing the substrate holding portion 10, the side pressing mechanism 20, and the edge pressing mechanism 30. FIG. 7 is an example of the substrate holding portion 10 viewed from the direction of the rotation axis of the rotating drum 5. Fig. 8 is an example of a cross-sectional view of the side pressing mechanism 20 seen from the direction of the rotation axis of the rotating drum 5. Fig. 9 is an example of the edge pressing mechanism 30 seen from the direction of the rotation axis of the rotary drum 5. In addition, in Figure 6, the main body portion 41, drum chamber 42, raw material gas adsorption chamber 43, plasma reaction chamber 44, purge gas chamber 45, exhaust portion 46, and conveyance path 47. ) and other structures are omitted. In addition, in FIGS. 6 and 9 , the arrangement configuration of the side pressing mechanism 20 and the edge pressing mechanism 30 in the substrate processing apparatus 100A according to the second embodiment shown in FIG. 2 is explained as an example. In addition, in the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, the arrangement of the edge pressing mechanism 30 is different, but other than that, it is the same, and redundant description will be omitted.

As shown in FIG. 6 , the substrate holding portion 10 is provided on the outer peripheral surface of the rotating drum 5. That is, when the rotary drum 5 rotates, the substrate holding portion 10 is also arranged to rotate together with the rotary drum 5.

As shown in FIG. 7 , the substrate holding portion 10 has a plate material 11 and a fixing member 12. The plate 11 is a member extending in a direction parallel to the rotation axis of the rotating drum 5. One end of the plate 11 in the rotation direction of the rotary drum 5 (the front side in the rotation direction of the rotary drum 5 when winding the substrate G around the outer peripheral surface of the rotary drum 5) is fixed with a bolt or the like. It is fixed to the outer peripheral surface of the rotating drum 5 by a member 12. As a result, the plate material 11 of the substrate holding portion 10 is provided to be openable and closed in the circumferential direction of the outer peripheral surface of the rotary drum 5. The front edge of the substrate G is inserted between the lower surface of the plate 11 and the outer peripheral surface of the rotary drum 5, and the substrate G is held between the lower surface of the plate 11 and the outer peripheral surface of the rotary drum 5 and rotated. By rotating the drum 5, the substrate G does not fall out from the plate 11. The substrate holding portion 10 holds the front side edge of the substrate G on the outer peripheral surface of the rotating drum 5.

As shown in Fig. 6, the side pressing mechanism 20 is provided to face both ends (on both sides of the rotation axis direction) of the outer peripheral surface of the rotating drum 5. The side pressing mechanism 20 is fixed to the main body 41 (see FIG. 1) by a support member 25. That is, even if the rotary drum 5 rotates, the side pressing mechanism 20 is arranged to remain in that position. In addition, the length of the plate 11 in the direction of the rotation axis is shorter than the interval between the two side pressing mechanisms 20 at both ends, and when the rotary drum 5 rotates, the substrate rotates together with the rotary drum 5. The holding portion 10 and the side pressing mechanism 20 are arranged so as not to interfere. In addition, although it has been explained that two side pressing mechanisms 20 are provided, it is not limited to this, and at least two or more may be provided.

As shown in Fig. 8, the side pressing mechanism 20 has a housing 21, a cover member 22, a pressing pin 23, and a pressing spring 24. The housing 21 has an upper portion 23a of the pressing pin 23, a flange portion 23b, and a concave portion 21a that accommodates the pressing spring 24. The cover member 22 has an opening 22a through which the lower portion 23c of the pressing pin 23 is inserted. Additionally, the cover member 22 is fixed to the housing 21 by bolts. The pressure pin 23 has an upper part 23a, a flange part 23b, and a lower part 23c. Here, the flange portion 23b is formed larger than the opening portion 22a, and the lower portion 23c is formed smaller than the opening portion 22a. As a result, the lower part 23c of the pressing pin 23 protrudes toward the outer peripheral surface of the rotating drum 5, and the flange portion 23b abuts with the cover member 22, preventing the pressing pin 23 from falling. It is configured not to do so. The pressing spring 24 is disposed in the concave portion 21a of the housing 21 and urges the pressing pin 23 in a direction to press it against the outer peripheral surface of the rotary drum 5. As a result, the pressing pin 23 is provided so as to be able to advance and retreat toward the outer peripheral surface of the rotary drum 5, and is pressed toward the outer peripheral surface of the rotary drum 5.

Additionally, the housing 21 is fixed to the support member 25, and the support member 25 is fixed to the main body portion 41. Here, the side pressing mechanism 20 is fixed to the support member 25 with a gap G1 between the lower surface of the cover member 22 and the outer peripheral surface of the rotary drum 5. When the rotary drum 5 rotates, both sides of the substrate G adsorbed on the outer peripheral surface of the rotary drum 5 pass through the gap G1. At this time, the pressing pins 23 pressed by the pressing spring 24 press both sides of the substrate G toward the outer peripheral surface of the rotating drum 5. Thereby, the side pressing mechanism 20 can press both sides of the substrate G held on the outer peripheral surface of the rotary drum 5 to the outer peripheral surface of the rotary drum 5 .

Additionally, as the rotary drum 5 rotates, the pressing pin 23 slides on the substrate G. For this reason, the portion of the lower portion 23c of the pressing pin 23 that slides with the substrate G is preferably formed in a hemispherical shape, for example. In addition, the pressing pin 23 that slides on the substrate G is preferably formed of a resin material such as Teflon (registered trademark), for example. In addition, the surface may be coated with DLC (Diamond Like Carbon) coating or fluorine coating, which has good wear resistance.

Additionally, the support member 25 may be configured so that the position of the side pressing mechanism 20 can be changed. That is, when the substrate G is adsorbed to the rotating drum 5, the support member 25 arranges the side pressing mechanism 20 at a position where the pressing pin 23 presses the substrate G to the outer peripheral surface of the rotating drum 5. do. On the other hand, when performing a film forming process on the substrate G after the substrate G is adsorbed to the rotating drum 5, the support member 25 is moved by a moving means (not shown) to prevent the pressing pin 23 from contacting the substrate G. Move and arrange the side compression device (20) to a position where it is not positioned. Thereby, it is possible to prevent the pressing pin 23 from sliding on the substrate G during the film forming process.

As shown in FIGS. 6 and 9 , the edge pressing mechanism 30 has a pressing member 31, a drive shaft 32, and a drive device 33. The pressing member 31 is a long member having a longitudinal direction parallel to the rotation axis of the rotating drum 5. The drive shaft 32 is connected to the pressing member 31 and penetrates the housing 41a of the main body 41 (see FIG. 1). The driving device 33 can press the pressing member 31 against the outer peripheral surface of the rotating drum 5 by advancing the driving shaft 32. Additionally, the drive device 33 can space the pressing member 31 from the outer peripheral surface of the rotary drum 5 by retracting the drive shaft 32. Thereby, the edge pressing mechanism 30 can press the rear side edge of the substrate G held on the outer peripheral surface of the rotary drum 5 to the outer peripheral surface of the rotary drum 5 . Additionally, the edge pressing mechanism 30 may be present on the substrate loading path, as shown in FIG. 1 .

Next, an example of the operation of the substrate processing apparatus 100, 100A will be described using FIGS. 10 to 12. FIG. 10 is a flowchart showing an example of the operation of the substrate processing apparatus 100 (100A). Fig. 11 is an example of a schematic diagram showing the relationship between the rotating drum 5 and the substrate G. Figure 12 is an example of a schematic diagram showing adsorption of substrate G. In addition, in FIG. 11 , the arrangement configuration of the side pressing mechanism 20 and the edge pressing mechanism 30 in the substrate processing apparatus 100A according to the second embodiment shown in FIG. 2 is explained as an example. In addition, with respect to the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, differences will be explained, and overlapping explanations will be omitted.

In step S101, the front end of the substrate G is held by the substrate holding portion 10. The control unit 900 opens the gate valve 210 and controls the transfer roller 220 to transport the substrate G from the load lock chamber 200 through the transfer path 47 and the plasma reaction chamber 44 to the drum chamber 42. ) is conveyed to the outer peripheral surface of the rotating drum (5). As a result, the front end of the conveyed substrate G is inserted between the lower surface of the plate material 11 and the outer peripheral surface of the rotary drum 5, and the front side edge of the substrate G is formed between the lower surface of the plate material 11 and the outer peripheral surface of the rotating drum 5. It is sandwiched and supported in between. Thereby, the substrate holding portion 10 holds the front side edge of the substrate G on the outer peripheral surface of the rotating drum 5.

In step S102, a chuck voltage is applied to the bipolar electrostatic chuck 50 (dipolar electrostatic chuck ON). The control unit 900 controls the power source (not shown) of the bipolar electrostatic chuck 50 to apply a positive voltage to the electrode 51 and a negative voltage to the electrode 52.

In step S103, the substrate G is further conveyed by the conveyance roller 220 and the rotary drum 5 is rotated. The control unit 900 controls the drive motor (not shown) of the rotary drum 5 to rotate the rotary drum 5, and moves the conveying roller 220 according to the rotation speed of the outer peripheral surface of the rotary drum 5. Control and transport the substrate G.

FIG. 11(a) is a schematic diagram showing an example of the state of the rotating drum 5 and the substrate G in step S103. As the rotary drum 5 rotates, the lower surface of the substrate G comes into contact with the outer peripheral surface of the rotary drum 5 in order from the front side of the substrate G. Additionally, both sides of the substrate G are pressed against the rotating drum 5 by the side pressing mechanism 20 . As a result, on both sides of the substrate G pressed by the side pressing mechanism 20 and the center portion of the surface of the substrate G between them, the lower surface of the substrate G and the outer peripheral surface of the rotary drum 5 are in contact with each other without a gap.

Figure 12(a) is a schematic diagram showing the adsorption of the substrate G when the lower surface of the substrate G and the outer peripheral surface of the rotary drum 5 are in contact with each other without a gap. The bipolar electrostatic chuck 50 is embedded within the dielectric 53. By applying positive and negative voltages to the electrodes 51 and 52 of the bipolar electrostatic chuck 50, the substrate G is adsorbed to the bipolar electrostatic chuck 50 by a gradient force.

In step S104, the rear edge of the substrate G is pressed against the rotary drum 5 by the edge pressing mechanism 30.

First, the control unit 900 controls the drive motor (not shown) of the rotary drum 5 to rotate the rotary drum 5 to a position where the rear edge of the substrate G abuts when the pressing member 31 is advanced. I order it. Through the processing so far, the side pressing mechanism 20 is pressed against the rotary drum 5 from the front end to the rear end of both sides of the substrate G. As a result, the front side edge of the substrate G is held by the substrate holding portion 10, and both sides of the substrate G and the center area of the surface of the substrate G are attracted to the bipolar electrostatic chuck 50 by the gradient force. FIG. 11(b) is a schematic diagram showing an example of the state of the rotating drum 5 and the substrate G in step S104. As shown by the two-dot chain line in FIG. 11(b), there is a risk that the rear edge of the substrate G may float from the outer peripheral surface of the rotary drum 5 due to the restoring force of the substrate G.

The control unit 900 controls the drive device 33 to advance the pressing member 31 of the edge pressing mechanism 30 to press the pressing member 31 against the outer peripheral surface of the rotating drum 5. As a result, the rear edge of the substrate G is pressed against the rotating drum 5. As a result, as shown by the solid line in FIG. 11(b), the lower surface of the substrate G and the outer peripheral surface of the rotary drum 5 are in contact with each other without a gap. As a result, the entire lower surface of the substrate G is adsorbed to the bipolar electrostatic chuck 50 by the gradient force.

That is, the front side edge of the substrate G is held on the outer peripheral surface of the rotary drum 5 by the substrate holding portion 10. Then, as the rotary drum 5 rotates, the side pressing mechanism 20 relatively moves both sides of the substrate G from the front side toward the rear side. Thereby, the substrate G is adsorbed to the outer peripheral surface of the rotating drum 5 in order from the front side. Then, the rear edge of the substrate G is pressed against the outer peripheral surface of the rotary drum 5 by the edge pressing mechanism 30. This prevents the rear edge of the substrate G from rising.

In this way, the substrate G is adsorbed on the outer peripheral surface of the rotary drum 5 by the gradient force of the bipolar electrostatic chuck 50, so that the substrate holding portion 10 and the side pressing mechanism 20 provided on the rotary drum 5 The configuration can be simplified. That is, the substrate G is placed on the rotary drum 5 without providing holding tools (for example, mechanical clamps, etc.) to hold the substrate G on the outer peripheral surface of the rotary drum 5 on both sides and rear edges of the substrate G. ) can be adsorbed on the outer circumferential surface. In addition, not only the outer edge of the substrate G pressed by the substrate holding portion 10, the side pressing mechanism 20, and the edge pressing mechanism 30, but also the center portion of the surface of the substrate G can be adsorbed to the outer peripheral surface of the rotary drum 5. You can.

In addition, in the case of the substrate processing apparatus 100A according to the second embodiment shown in FIG. 2, the side of the substrate G is pressed by the side pressing mechanism 20, and the rear edge of the substrate G is pressed by the side pressing mechanism 20. After passing, the rotary drum 5 continues to rotate again, and the rear edge of the substrate G is placed at the pressing position of the edge pressing mechanism 30. Then, the rear edge of the substrate G is pressed against the rotating drum 5 by the edge pressing mechanism 30 .

Additionally, in the case of the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, before the portion close to the side rear edge of the substrate G is pressed by the side pressing mechanism 20, the rear edge of the substrate G is pressed. It is compressed by the edge compression device (30). After that, the rotary drum 5 continues to rotate again, and the portion close to the rear side edge of the side of the substrate G is pressed by the side pressing mechanism 20.

In step S105, plasma is generated in the plasma reaction chamber 44, and the substrate G is adsorbed by the Coulomb force in addition to the gradient force described above. FIG. 11(c) is a schematic diagram showing an example of the state of the rotating drum 5 and the substrate G in step S105. As shown in FIG. 11(c), the pressure of the gas in the plasma reaction chamber 44 is adjusted to generate plasma on the surface of the substrate G. Here, it is desirable to use the same type of gas as the plasma in the substrate processing (S106) described later as the generated plasma. Additionally, the gas species may be different. Additionally, since the width of the plasma reaction chamber in the rotation direction is shorter than the length of the substrate G in the rotation direction, it is difficult to bring the entire substrate G into contact with the plasma in the plasma reaction chamber 44 at once. Accordingly, the substrate G may be sequentially partially exposed to the plasma reaction chamber 44 from the front to the back while rotating the rotary drum 5 to sequentially generate charges required for adsorption by the Coulomb force on the substrate G. For example, in Figure 11 (c), after the rear edge of the substrate G is pressed against the rotary drum 5 by the edge pressing mechanism 30 in Figure 11 (b), the rotary drum 5 is again pressed. The pressure of the substrate G may be sequentially adjusted from the front to the rear by rotating to generate plasma and expose the substrate G to the plasma.

Figure 12(b) is a schematic diagram showing adsorption of substrate G in a plasma generated state. Negative charges 54 and positive charges 55 are generated by plasma. The negative charge 54 on the surface of the substrate G is attracted to the electrode 51 to which a positive voltage is applied by the Coulomb force. Additionally, the positive charge 55 on the surface of the substrate G is attracted to the electrode 52 to which a negative voltage is applied by the Coulomb force. As a result, the substrate G is attracted to the bipolar electrostatic chuck 50 by the charges 54 and 55 on the surface of the substrate G and the Coulomb force of the electrodes 51 and 52. Additionally, by applying positive and negative voltages to the electrodes 51 and 52 of the bipolar electrostatic chuck 50, the substrate G is adsorbed to the bipolar electrostatic chuck 50 by the gradient force. That is, the substrate G is adsorbed by gradient force and Coulomb force.

Here, in the case of a unipolar electrostatic chuck, for example, a positive voltage is applied to the electrode, a negative charge is charged to the substrate G, and other holding mechanisms such as mechanical clamps are used until the substrate G is adsorbed by the Coulomb force. It is necessary to hold the substrate G on the outer peripheral surface of the rotating drum 5 by means of support. In this case, only the outer periphery of the substrate G is clamped. Additionally, if a gap occurs between the outer peripheral surface of the rotating drum 5 and the lower surface of the substrate G, the Coulomb force decreases and the adsorption force to the substrate G decreases. Additionally, if the charge returns to the lower surface side of the substrate G (between the lower surface of the substrate G and the outer peripheral surface of the rotary drum 5), the Coulomb force decreases, and the adsorption force of the substrate G decreases.

In contrast, by using the bipolar electrostatic chuck 50, the substrate G can be adsorbed by gradient force. Additionally, the substrate G can be adsorbed not only on the outer edge of the substrate G but also on the center portion of the surface. Thereby, in step S105, before supplying the charges 54 and 55 for generating the Coulomb force to the surface of the substrate G, the gap between the lower surface of the substrate G and the outer peripheral surface of the rotary drum 5 can be eliminated. In addition, it is possible to prevent the charges 54 and 55 from flowing between the substrate G and the rotating drum 5. Thereby, the substrate G can be adsorbed to the outer peripheral surface of the rotating drum 5 by the gradient force and Coulomb force.

In step S106, substrate processing is performed on the substrate G. As the rotary drum 5 rotates, the surface of the substrate G is divided into the raw material gas adsorption chamber 43, the purge gas chamber 45, the plasma reaction chamber 44, and the purge gas chamber 45, in that order, as shown in FIG. Repeat. Accordingly, the film forming process is performed on the substrate G by the ALD cycle by repeating the raw material gas adsorption process, purge process, plasma treatment process, and purge process. FIG. 11(d) is a schematic diagram showing an example of the state of the rotating drum 5 and the substrate G in step S106. The surface of the substrate G is exposed to plasma in the plasma reaction chamber 44, so that electric charges are adsorbed on the surface of the substrate G. As a result, during substrate processing, the substrate G is adsorbed to the outer peripheral surface of the rotating drum 5 by the gradient force and Coulomb force.

In step S107, the chuck voltage for the bipolar electrostatic chuck 50 is stopped (dipolar electrostatic chuck OFF). The control unit 900 controls the power supply (not shown) of the bipolar electrostatic chuck 50 to stop applying voltage to the electrodes 51 and 52. Figure 12(c) is a schematic diagram showing adsorption of the substrate G in a state in which the chuck voltage is stopped. By stopping the application of voltage to the electrodes 51 and 52, the adsorption by the gradient force is released. On the other hand, the substrate G remains adsorbed on the outer peripheral surface of the rotating drum 5 due to the Coulomb force of the charges 54 and 55 remaining on the surface of the substrate G.

In step S108, static electricity elimination plasma is generated in the plasma reaction chamber 44. Here, it is desirable to use the same type of gas as the plasma in the substrate processing (S106) as the generated plasma. Additionally, the gas species may be different. Then, in step S109, the rotary drum 5 is rotated in reverse while the static electricity removal plasma is generated in the plasma reaction chamber 44.

By counter-rotating the rotary drum 5, the substrate G is loaded into the load lock chamber 200 from the rear end side. Figure 12(d) is a schematic diagram showing the adsorption of the substrate G in a state exposed to static elimination plasma. As shown in FIG. 12(d), the residual charge on the surface of the substrate G is removed by the antistatic plasma. Thereby, the adsorption of the substrate G due to the Coulomb force is also released. Accordingly, the rear side of the substrate G rises from the outer peripheral surface of the rotating drum 5 due to the restoring force of the substrate G. Then, as shown in FIG. 11(e) , when the rotary drum 5 rotates again in reverse, the substrate G is loaded onto the conveyance roller 220 from the rear side and is conveyed to the load lock chamber 200. Additionally, as described above, the entire substrate G is not exposed to the plasma reaction chamber 44 at once. Accordingly, static electricity is eliminated sequentially from the rear edge of the substrate G toward the front edge, and the adsorption is released. Therefore, the substrate G does not come off the rotating drum 5 at once.

In this way, according to the substrate processing system 1, 1A according to the present embodiment, the substrate G can be appropriately held on the outer peripheral surface of the rotating drum 5. Additionally, since the configuration of the substrate holding portion 10 provided on the surface of the rotating drum 5 can be simplified, the gap between the rotating drum 5 and the inner peripheral surface of the drum chamber 42 can be reduced. As a result, mixing of gases between the raw material gas adsorption chamber 43, the plasma reaction chamber 44, and the purge gas chamber 45 can be suppressed.

Here, when the side of the substrate G is pressed against the rotary drum 5 with the side pressing mechanism 20 to adsorb the substrate G to the bipolar electrostatic chuck 50, the rear edge of the longitudinal end is adsorbed to the bipolar electrostatic chuck 50. If this is not done, there is a risk that the area near the terminal end (rear edge) of the side of the substrate G may bounce off the surface of the rotary drum 5.

On the other hand, in the case of the substrate processing apparatus 100 according to the first embodiment shown in FIG. 1, before the side pressing mechanism 20 presses the longitudinal end portion of the side of the substrate G to the rotary drum 5, the edge pressing mechanism The rear edge of the longitudinal end of the substrate G is pressed against the rotating drum 5 by (30). Then, as the rotary drum 5 further rotates, the side pressing mechanism 20 presses the rotary drum 5 up to the longitudinal end (rear side edge) of the side of the substrate G. As a result, occurrence of bounce at the terminal end of the substrate G can be suppressed, and the substrate G can be electrostatically adsorbed to the bipolar electrostatic chuck 50.

In addition, in the case of the substrate processing apparatus 100A according to the second embodiment shown in FIG. 2, after the side pressing mechanism 20 presses the rotary drum 5 up to the longitudinal end of the side of the substrate G, the edge pressing mechanism ( 30) presses the rear edge of the longitudinal end of the substrate G against the rotating drum 5. As a result, occurrence of bounce at the terminal end of the substrate G can be suppressed, and the substrate G can be electrostatically adsorbed to the bipolar electrostatic chuck 50.

In addition, the substrate processing system 1, 1A has been described as winding or rewinding the substrate G around the rotating drum 5 in the substrate processing apparatus 100, 100A, but it is not limited to this.

Fig. 13 is an example of a perspective view showing the configuration of another substrate processing system 1B. The substrate processing system 1B includes a rotating drum 5, a substrate processing device 100B, a load lock chamber 200, a substrate holding device 300, and a control unit 900.

The substrate holding device 300 is connected to the load lock chamber 200 through a gate valve 210. Additionally, the substrate holding device 300 is connected to the substrate processing device 100B. By moving in the axial direction, the rotary drum 5 is aligned with the position 5A (shown in a broken line) of the rotary drum 5 in the substrate holding device 300 and the rotary drum in the substrate processing device 100B. It is configured to be able to move the position 5B (shown by the two-dot chain line) of (5). Additionally, the rotary drum 5 is configured to be rotatable in the substrate holding device 300 and the substrate processing device 100B.

The substrate holding device 300 can wind or rewind the substrate G around the rotating drum 5 at position 5A. In addition, the configuration of winding or rewinding the substrate G around the rotary drum 5 of the substrate holding device 300 is as follows: It is the same as the winding or rewinding configuration, and redundant explanations are omitted. Additionally, by transporting the rotary drum 5 around the substrate G to the position 5B, a film forming process can be performed on the substrate G in the substrate processing apparatus 100B.

The substrate processing apparatus 100B may omit the conveyance path 47 (see FIG. 1), and the rotary drum 5 is configured to be movable in the axial direction. Other configurations are the same as those of the substrate processing apparatuses 100 and 100A, and redundant description will be omitted.

In addition, an example of the configuration of the substrate holding portion 10 that holds the front side edge of the substrate G on the outer peripheral surface of the rotating drum 5 has been described using FIG. 7 and the like, but the configuration of the substrate holding portion 10 is not limited to this configuration.

The configuration of other substrate holding portions 10A and 10B will be explained using FIGS. 14 to 16. Fig. 14 is an example of a perspective view showing the rotating drum 5 and the substrate holding portions 10A and 10B. FIG. 15 is an example of a schematic diagram showing the rotary drum 5 and the substrate holding portions 10A and 10B as seen from the rotation axis direction of the rotary drum 5. FIG. 16 is an example of a schematic diagram showing the rotary drum 5 and the substrate holding portion 10A as seen from above the rotary drum 5. 14 to 16, the side pressing mechanism 20, the edge pressing mechanism 30, the main body 41, the drum chamber 42, the raw material gas adsorption chamber 43, and the plasma reaction chamber 44. , Other structures such as the purge gas chamber 45, exhaust section 46, and conveyance path 47 are omitted, and are simplified as a chamber 40. Chamber 40 accommodates rotating drum 5.

The substrate processing system 1 (1A, 1B) has a rotating drum (5). On the outer peripheral surface of the rotary drum 5, a substrate holding portion 10A is disposed at a position for holding the front side portion of the substrate G (part of one side in the rotation direction of the rotary drum 5). . Additionally, on the outer peripheral surface of the rotary drum 5, a substrate holding portion 10B is disposed at a position for holding the rear side edge of the substrate G (part of the other side in the rotation direction of the rotary drum 5). It is done.

In addition, in the examples shown in FIGS. 14 and 15, both substrate holding portions 10A and 10B are shown as being provided on the outer peripheral surface of the rotating drum 5, but the configuration is not limited to this. At least one of the substrate holding portions 10A and 10B may be provided on the outer peripheral surface of the rotating drum 5. In addition, a substrate holding portion 10 (see FIG. 7) is provided at a position for holding the front edge of the substrate G, and a substrate holding portion 10B is provided at a position for holding the rear edge of the substrate G. It may be a composition. 14 and 15 show a case where one substrate G is held on the rotating drum 5. When a plurality of substrates G are held on the rotating drum 5, a plurality of substrate holding portions 10A and 10B may be provided depending on the number of substrates G held.

Additionally, the substrate holding portion 10A and the substrate holding portion 10B have similar structures. Here, the substrate holding portion 10A will be described, and redundant description of the substrate holding portion 10B will be omitted.

The substrate holding portion 10A includes a clamp member 111, a rotating shaft 112, a bearing 113, a position holding magnet 114, 115, and a driven rotor (magnetic coupling 116). It has a rotor (117) on one side.

Additionally, the substrate processing system 1 (1A, 1B) has a drive mechanism 15 that rotates the rotation axis 112 of the substrate holding portions 10A, 10B. The drive mechanism 15 is configured to be in non-contact with the rotating drum 5 (and the substrate holding portions 10A, 10B). Additionally, the drive mechanism 15 has a drive-side rotor (rotor on one side of the magnet coupling 116) 118, a drive shaft 119, and a drive unit 120.

The clamp member 111 is a member that comes into contact with the front side edge of the substrate G and presses the substrate G against the outer peripheral surface of the rotating drum 5. The clamp member 111 is, for example, a member formed in a substantially L-shape when viewed from the side, and has an abutting portion 111a that abuts the substrate G and a support portion 111b fixed to the rotation axis 112. Additionally, the clamp member 111 is formed of a material (magnetic material, for example, nickel-plated SPPC, SUS430, etc.) that is attracted by the magnetic force of the position holding magnets 114 and 115.

The rotation axis 112 is an axis that rotates the clamp member 111. The rotation axis C2 of the rotation axis 112 is arranged parallel to the rotation axis C1 of the rotation drum 5, and is rotatably supported by the bearing 113. The bearing 113 is fixed to the rotating drum 5 and rotatably supports the rotating shaft 112. In addition, the bearing 113 is preferably of a greaseless type, such as a ceramic bearing, to prevent dust generation due to grease in the bearing.

Additionally, a concave portion 56 is formed on the outer peripheral surface of the rotary drum 5. A rotation axis 112 is disposed in the concave portion 56.

As the rotation axis 112 rotates, the clamp member 111 rotates between a holding position for holding the substrate G (see solid line in FIG. 15) and an opening position for opening the substrate G (see double-dashed line in FIG. 15). It is configured as possible.

The position holding magnet 114 holds the position of the clamp member 111 by magnetically adsorbing the clamp member 111 when the clamp member 111 is placed in the holding position (see solid line in FIG. 15).

When the rotation axis 112 is rotated in one direction (counterclockwise in FIG. 15) and the clamp member 111 is disposed at the holding position (see solid line in FIG. 15), the abutting portion of the clamp member 111 (see solid line in FIG. 15) 111a) is in contact with the upper surface of the front side edge of the substrate G. Additionally, as the clamp member 111 is magnetically adsorbed by the position holding magnet 114, the abutting portion 111a of the clamp member 111 is pulled toward the outer peripheral surface of the rotary drum 5. As a result, the abutting portion 111a of the clamp member 111 presses the front side edge of the substrate G against the outer peripheral surface of the rotary drum 5. Accordingly, the front end of the substrate G is prevented from rising from the outer peripheral surface of the rotary drum 5. In addition, the position holding magnet 114 changes the position of the clamp member 111 to the holding position due to the centrifugal force acting on the clamp member 111 or the self-weight of the clamp member 111 when the rotary drum 5 rotates. inhibit movement from

The position holding magnet 115 holds the position of the clamp member 111 by magnetically adsorbing the clamp member 111 when the clamp member 111 is disposed in the open position (see double-dashed line in FIG. 15).

When the rotation axis 112 is rotated in a direction opposite to one direction (clockwise in FIG. 15) and the clamp member 111 is disposed in the open position (see double-dashed line in FIG. 15), the clamp member 111 The abutting portion 111a retreats from the upper surface of the front side edge of the substrate G into the concave portion 56. In addition, the position holding magnet 115 moves the position of the clamp member 111 from the open position due to the centrifugal force acting on the clamp member 111 or the self-weight of the clamp member 111 when the rotary drum 5 rotates. inhibit movement.

One end of the rotation shaft 112 extends and protrudes beyond the side surface of the rotation drum 5. Additionally, the driven rotor 117 is fixed to one end of the rotation shaft 112. Additionally, a drive-side rotor 118 is fixed to one end of the drive shaft 119. The driven rotor 117 and the driving rotor 118 each have permanent magnets.

The driving unit 120 that drives the driving shaft 119 is provided outside the chamber 40. The drive shaft 119 penetrates the side wall of the chamber 40, is connected to the drive unit 120 on the outside of the chamber 40, and the drive rotor 118 is fixed on the inside of the chamber 40. The drive unit 120 is configured to drive the drive shaft 119 in the axial direction (black arrow direction in FIG. 14) and the rotational direction (white arrow direction in FIG. 14). Additionally, a seal structure (not shown) operable in the axial and rotational directions is provided in the penetrating portion where the drive shaft 119 penetrates the side wall of the chamber 40.

Here, by rotating the rotary drum 5 at a predetermined angle (the first angle), the rotation axis 112 and the drive axis 119 of the substrate holding portion 10A can be arranged on the same axis (or approximately the same axis). In addition, by advancing the drive shaft 119 in the axial direction (direction toward the rotating drum 5) by the drive unit 120, the drive side rotor 118 and the drive shaft 119 are moved to a predetermined close position (see Figure 16). It can be arranged (see the positions of the drive-side rotor 118 and the drive shaft 119 indicated by solid lines). In the close position, the driven rotor 117 and the driving rotor 118 are arranged close to each other at a predetermined distance. As a result, the driven rotor 117 and the driving rotor 118 are magnetically coupled to form a magnet coupling 116. The magnetic coupling 116 is a coupling that transmits the rotational force of the drive shaft 119 to the rotation shaft 112 in a non-contact manner through magnetic force. In this state, by rotating the drive shaft 119 by the drive unit 120, the rotation shaft 112 can be rotated (in the direction of the white arrow in FIG. 14) through the magnet coupling 116. As a result, the drive mechanism 15 can rotate the clamp member 111 of the substrate holding portion 10A between the holding position and the open position (in the direction of the white arrow in FIG. 14).

In addition, by retracting the drive shaft 119 in the axial direction (direction away from the rotating drum 5) by the drive unit 120, the drive side rotor 118 and the drive shaft 119 are moved to a predetermined retracted position (see Figure 16). It can be placed at the position of the drive-side rotor 118 and the drive shaft 119 indicated by the two-dot chain line. In the retracted position, the driven rotor 117 and the driving rotor 118 are sufficiently spaced apart. As a result, the driven rotor 117 and the driving side rotor 118 are magnetically disconnected, so that when rotating the rotary drum 5, the driving side rotor relative to the driven rotor 117 The influence of the magnetic field caused by the permanent magnet of (118) can be suppressed. That is, when rotating the rotary drum 5, the clamp member 111 can maintain the position held by the position holding magnet 114 or the position holding magnet 115. Additionally, it is possible to suppress the magnetic field between the driven rotor 117 and the driving rotor 118 from influencing the rotation of the rotating drum 5.

Similarly, by rotating the rotary drum 5 at a predetermined angle (a second angle different from the first angle), the rotation shaft 112 and the drive shaft 119 of the substrate holding portion 10B are coaxially (or approximately coaxially). It can be placed in . Similarly, the drive unit 120 can configure the magnet coupling 116 by advancing the drive shaft 119, using the driven rotor 117 and the driving rotor 118 of the substrate holding part 10B. there is. Additionally, the drive unit 120 can rotate the rotation axis 112 of the substrate holding unit 10B by rotating the drive shaft 119. Thereby, the drive mechanism 15 can rotate the clamp member 111 of the substrate holding portion 10B between the holding position and the opening position of the substrate G.

Next, an example of the operation of the substrate holding portions 10A and 10B and the drive mechanism 15 will be described with reference to FIG. 10 . Additionally, descriptions of overlapping descriptions will be omitted.

In step S101, the front end of the substrate G is held by the substrate holding portion 10A. Here, after placing the substrate G on the outer peripheral surface of the rotary drum 5 with the clamp member 111 of the substrate holding portion 10A in the open position, the substrate holding portion 10A is clamped by the drive mechanism 15. The rotation axis 112 may be rotated to place the clamp member 111 of the substrate holding portion 10A in the holding position. Additionally, with the clamp member 111 of the substrate holding portion 10A in the holding position, the front end of the substrate G is inserted between the lower surface of the abutting portion 111a and the outer peripheral surface of the rotary drum 5, so that the substrate G The front side edge may be sandwiched between the lower surface of the abutting portion 111a and the outer peripheral surface of the rotary drum 5. Thereby, the substrate holding portion 10A holds the front side edge of the substrate G on the outer peripheral surface of the rotating drum 5.

Thereafter, similar to the operation of the substrate processing apparatus 100 described above, a chuck voltage is applied to the bipolar electrostatic chuck 50 (see S102), and the substrate G is further conveyed by the conveyance roller 220 and the rotating drum 5 ) (see S103). Additionally, in this state, the clamp member 111 of the substrate holding portion 10A is disposed at the holding position. Additionally, the clamp member 111 of the substrate holding portion 10B is disposed in the open position. Here, the clamp member 111 of the substrate holding portion 10B is disposed within the concave portion 56.

In step S104, the rear edge of the substrate G is pressed against the rotary drum 5 by the edge pressing mechanism 30. Thereafter, the rotation axis 112 of the substrate holding portion 10B may be rotated by the driving mechanism 15 to place the clamp member 111 of the substrate holding portion 10B in the holding position. Thereby, the substrate holding portion 10B holds the rear side edge of the substrate G on the outer peripheral surface of the rotating drum 5.

Thereafter, in steps S105 to S109, processing is performed similarly to the operation of the substrate processing apparatus 100 described above. Here, during rotation of the rotary drum 5, the drive-side rotor 118 and the drive shaft 119 are in a retracted position (refer to the positions of the drive-side rotor 118 and the drive shaft 119 indicated by the two-dot chain line in FIG. 16 ) is placed in. As a result, the driven rotor 117 and the driving rotor 118 are magnetically disconnected, and the permanent magnet of the driven rotor 117 and the permanent magnet of the driving rotor 118 are separated. The influence of magnetic force on the rotation of the rotating drum 5 can be suppressed. Additionally, before unloading the substrate G, the rotation axis 112 of the substrate holding portion 10B is rotated by the drive mechanism 15 to set the clamp member 111 of the substrate holding portion 10B to the open position. Additionally, the clamp member 111 of the substrate holding portion 10A may also be in the open position. Additionally, with respect to the clamp member 111 of the substrate holding portion 10A, the front side edge of the substrate G is pulled out between the lower surface of the abutting portion 111a and the outer peripheral surface of the rotary drum 5 while remaining in the holding position. You may do so.

As described above, according to the configuration of the substrate holding portions 10A, 10B, the front and rear edges of the substrate G can be pressed against the outer peripheral surface of the rotary drum 5, so that the substrate G is pressed against the rotary drum 5. It can prevent floating from the outer circumference. Thereby, it is possible to prevent the substrate G from coming into contact with surrounding structures and to prevent the substrate G from falling off from the outer peripheral surface of the rotating drum 5.

Additionally, the holding position and opening position of the plurality of substrate holding portions 10A, 10B can be controlled by at least one drive mechanism 15.

In addition, by using a non-contact magnet coupling 116 (driven rotor 117, driven rotor 118) to transmit rotational force between the rotating shaft 112 and the driving shaft 119, the sliding movement is reduced. Dust generation (wear powder, etc.) can be suppressed.

Although the substrate processing systems 1, 1A, and 1B have been described above, the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the patent claims. .

In addition, in the above embodiment, as an example, application to an apparatus for forming a SiN film by the ALD method has been explained, but it is not limited to the SiN film, and a dielectric film such as a SiO film or a metal oxide semiconductor film. etc. may be applied to a device for forming a film by the ALD method.

Claims (20)

A cylindrical or cylindrical rotating drum having a rotation axis extending in the longitudinal direction,
a bipolar electrostatic chuck disposed on the outer peripheral surface of the rotating drum;
Equipped with at least two side pressing mechanisms facing each of both ends of the outer peripheral surface of the rotating drum and having pressing pins capable of advancing and retreating toward the outer peripheral surface of the rotating drum,
Substrate processing equipment. According to paragraph 1,
Further comprising a pressing member having a longitudinal direction in a direction parallel to the rotation axis of the rotating drum, and an edge pressing mechanism capable of pressing toward the outer peripheral surface of the rotating drum,
Substrate processing equipment. According to paragraph 2,
A substrate holding portion provided on the outer peripheral surface of the rotating drum and capable of holding a substrate between the outer peripheral surfaces of the rotating drum,
Substrate processing equipment. According to paragraph 3,
The substrate holding portion is disposed on the outer peripheral surface of the rotating drum at least one or both of a position holding a front side edge of the substrate with respect to the rotation direction of the rotary drum and a position holding a rear side edge. ,
Substrate processing equipment. According to paragraph 4,
The substrate holding support portion,
A clamp member in contact with the substrate,
The clamp member rotates and has a rotation axis parallel to the rotation axis of the rotating drum,
The clamp member is configured to be rotatable between a holding position for holding the substrate and an opening position for opening the substrate.
Substrate processing equipment. According to clause 5,
It has a drive mechanism that rotates the rotation shaft,
The drive mechanism is configured to be in non-contact with the rotating drum,
Substrate processing equipment. According to clause 6,
The driving mechanism transmits a rotational force to the rotation axis through magnetic force in a non-contact manner,
Substrate processing equipment. In clause 7,
The drive mechanism is configured to be retractable to a position spaced apart from the rotating drum,
Substrate processing equipment. According to paragraph 3,
The bipolar electrostatic chuck has a comb-tooth-shaped first electrode and a comb-tooth-shaped second electrode,
The comb teeth of the first electrode and the comb teeth of the second electrode are alternately arranged in the circumferential direction of the rotating drum,
Substrate processing equipment. According to paragraph 3,
The bipolar electrostatic chuck has a comb-tooth-shaped first electrode and a comb-tooth-shaped second electrode,
The comb teeth of the first electrode and the comb teeth of the second electrode are alternately arranged in a direction parallel to the rotation axis of the rotating drum,
Substrate processing equipment. A cylindrical or cylindrical rotating drum having a rotation axis extending in the longitudinal direction,
a bipolar electrostatic chuck disposed on the outer peripheral surface of the rotating drum;
Equipped with at least two side pressing mechanisms facing each of both ends of the outer peripheral surface of the rotating drum and having pressing pins capable of advancing and retreating toward the outer peripheral surface of the rotating drum,
Substrate holding support device. According to clause 11,
Further comprising a pressing member having a longitudinal direction in a direction parallel to the rotation axis of the rotating drum, and an edge pressing mechanism capable of pressing toward the outer peripheral surface of the rotating drum,
Substrate holding support device. According to clause 12,
A substrate holding portion provided on the outer peripheral surface of the rotating drum and capable of holding a substrate between the outer peripheral surfaces of the rotating drum,
Substrate holding support device. According to clause 13,
The substrate holding portion is disposed on the outer peripheral surface of the rotary drum at at least one or both of a position for holding the front side of the substrate with respect to the rotation direction of the rotary drum and a position for holding the rear side of the substrate. there is,
Substrate holding support device. According to clause 14,
The substrate holding support portion,
A clamp member in contact with the substrate,
The clamp member rotates and has a rotation axis parallel to the rotation axis of the rotating drum,
The clamp member is configured to be rotatable between a holding position for holding the substrate and an opening position for opening the substrate.
Substrate holding support device. According to clause 13,
The bipolar electrostatic chuck has a comb-tooth-shaped first electrode and a comb-tooth-shaped second electrode,
The comb teeth of the first electrode and the comb teeth of the second electrode are alternately arranged in the circumferential direction of the rotating drum,
Substrate holding support device. According to clause 13,
The bipolar electrostatic chuck has a comb-tooth-shaped first electrode and a comb-tooth-shaped second electrode,
The comb teeth of the first electrode and the comb teeth of the second electrode are alternately arranged in a direction parallel to the rotation axis of the rotating drum,
Substrate holding support device. A cylindrical or cylindrical rotating drum having a rotation axis extending in the longitudinal direction, a bipolar electrostatic chuck disposed on the outer peripheral surface of the rotating drum, and opposite ends of the outer peripheral surface of the rotating drum, respectively, advance and retreat toward the outer peripheral surface of the rotating drum. At least two side pressing mechanisms having possible pressing pins, and a side pressing mechanism capable of pressing a pressing member having a longitudinal direction in a direction parallel to the rotating axis of the rotating drum, toward the outer peripheral surface of the rotating drum, and an outer peripheral surface of the rotating drum A substrate holding method of a substrate processing apparatus, comprising a substrate holding portion capable of holding a substrate on an outer peripheral surface of the rotating drum,
A process of transporting the substrate,
A step of holding a front side edge of the substrate in the direction of travel of the substrate on the outer peripheral surface of the rotating drum by the substrate holding portion;
A step of pressing both sides of the substrate to the outer peripheral surface of the rotating drum with the pressing pins while rotating the rotating drum, and adsorbing the substrate to the outer peripheral surface of the rotating drum with the bipolar electrostatic chuck;
After pressing the rear edge of the substrate against the outer peripheral surface of the rotary drum by the pressing member and adsorbing the rear edge of the substrate onto the outer peripheral surface of the rotating drum by the dipole electrostatic chuck, the pressing member is pressed against the substrate. The process of separating from
A method of holding and supporting a substrate having. According to clause 18,
The substrate is shorter than the length of the circumference of the outer peripheral surface of the rotating drum,
Substrate holding support method. According to clause 19,
The substrate is a rectangular glass substrate,
Substrate holding support method.

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