KR20240011565A - Semiconductor package to improve bonding coverage and manufacturing method thereof - Google Patents

Abstract

The present invention is to fill the empty space between the four corners of one side of the semiconductor chip and the substrate by pre-forming a filling structure between the four corners of one side of the semiconductor chip and the substrate and then performing the TCB process using NCF. It relates to a semiconductor package for improving bonding coverage and a method of manufacturing the same.

Description

Semiconductor package for improving bonding coverage and manufacturing method thereof {SEMICONDUCTOR PACKAGE TO IMPROVE BONDING COVERAGE AND MANUFACTURING METHOD THEREOF}

The present invention provides a semiconductor package for improving bonding coverage that can prevent the lifting phenomenon at the corners of a semiconductor chip due to insufficient NCF coverage during a thermocompression bonding (hereinafter, TCB) process using a non-conductive film (hereinafter, NCF) and its manufacture. It's about method.

Generally, a semiconductor package is manufactured by attaching a semiconductor chip to a substrate, connecting the semiconductor chip and the substrate with a conductive wire, and then molding a molding compound resin on one side of the substrate to encapsulate the semiconductor chip and wire.

However, the conductive wire is first bonded to the bonding pad of the semiconductor chip, and then extends toward the substrate and is secondarily bonded to the conductive pattern of the substrate, occupying space in the up, down, and left and right directions within the semiconductor package. In this case, it may cause the size and signal transmission path of the semiconductor package to increase, and it may be difficult to miniaturize the semiconductor package.

In order to improve these shortcomings, a semiconductor package was proposed in which conductive bumps made of metal are formed integrally with the bonding pad (electrode pad) on one side of the semiconductor chip and are electrically directly connected to the conductive pattern of the printed circuit board. It is becoming.

Specifically, referring to FIG. 1, in the conventional semiconductor package 1, the conductive bump 11 is fused to the bonding pad 13 formed on one surface of the semiconductor chip 10 to form a protruding pin-like shape on the substrate 20. ) is attached to the pad 21. Accordingly, the signal transmission path can be shortened compared to existing conductive wires, and the size of the semiconductor package 1 can be reduced.

In this case, the semiconductor package 1 is an empty space that is not filled by the NCF 15 due to insufficient flow near the four corners of the semiconductor chip 10 during the compression process using the TCB (Thermal Compression Bonding) method. (E) (see (a) of FIG. 2) may occur, and the semiconductor chip 10 may be lifted on the substrate 20 due to this empty space (E). This lifting phenomenon of the semiconductor chip 10 was usually solved by applying more compression during the bonding process (see (b) of FIG. 2).

However, as the size of the semiconductor package 1 gradually becomes smaller and less space is available, the fillet 15a (a part of the NCF 15 that protrudes from the side or top of the semiconductor chip during the TCB process) becomes less spacious. Without it, it may become a more difficult situation to compress.

That is, if insufficient coverage occurs at the four corners of the semiconductor chip 10 after the TCB process, the process can be performed by adding bonding pressure or time to fill the coverage. This method can be used to fill the coverage of the semiconductor chip 10. ), there is a problem in that the fillet 15a (see FIG. 3) appears further outside.

Republic of Korea Patent Publication No. 10-2020-0034895 (Publication date: 2020.04.01.)

The present invention is intended to solve the above-described problem, by forming a filling structure in advance between the four corners of one side of the semiconductor chip and the substrate and then performing the TCB process using NCF, thereby forming the four corners of one side of the semiconductor chip and the substrate. The purpose is to provide a semiconductor package and a method of manufacturing the same to improve bonding coverage by filling the empty space between them.

A semiconductor package according to the present invention for realizing the above-described purpose includes: a substrate; a semiconductor chip having a plurality of conductive bumps on one surface so as to be electrically connected to a pad on the upper surface of the substrate; an NCF attached to one surface of the semiconductor chip, covering the plurality of conductive bumps, and bonding the substrate and the semiconductor chip; and a plurality of filling structures formed at corresponding positions on the upper surface of the substrate where the four corners of one side of the semiconductor chip are disposed before the TCB process of the semiconductor chip. Including, during the TCB process of the semiconductor chip using the NCF, The filling structure may fill the empty space between the four corners of the semiconductor chip and the substrate.

In this case, the filling structure may be formed integrally with the upper surface of the substrate during the design stage of the semiconductor package.

Additionally, the filling structure may be formed as a separate structure and then integrally attached to the upper surface of the substrate.

Additionally, the filling structure may be made of any one of metal, silicon, and inorganic materials.

Additionally, the filling structure may be formed in any one of the shapes of a square, triangle, or fan.

Additionally, the filling structure may have a portion in contact with the NCF during the TCB process formed as an inclined surface.

Meanwhile, in a semiconductor package manufacturing method for improving bonding coverage,

Preparing a semiconductor chip with conductive bumps on one side; Attaching an NCF to one surface of the semiconductor chip; forming a plurality of filling structures at corresponding positions on the upper surface of the substrate where four corners of one side of the semiconductor chip are disposed; placing one surface of the semiconductor chip on the upper surface of the substrate so that the conductive bumps are electrically connected; and pressing the semiconductor chip onto the substrate through a TCB process.

The semiconductor package and its manufacturing method for improving bonding coverage according to the present invention having the above configuration include pre-forming a filling structure between the four corners of one side of the semiconductor chip and the substrate, and then performing the TCB process using NCF, It is possible to fill the empty space between the four corners of one side of the semiconductor chip and the substrate, thereby fundamentally improving fillet and coverage.

In particular, in order to fill the coverage, it is compressed at a higher pressure during the TCB process, which prevents the fillet from excessively protruding to the outside of the semiconductor chip, thereby improving the size and reliability of the entire semiconductor package.

1 (a) and (b) are a side cross-sectional view and a plan view showing a conventional semiconductor package;
Figure 2 is a side cross-sectional view showing the process of filling the empty space formed in part 'A' of Figure 1;
Figures 3 (a) and (b) are a side cross-sectional view and a plan view showing a state in which the fillet protrudes outward from the fillet semiconductor chip after the TCB process of Figure 1;
4 is a plan view showing a semiconductor package for improving bonding coverage according to the present invention;
Figure 5 is a cross-sectional view taken along line II' of Figure 4;
Figure 6 is a side cross-sectional view of portion 'B' of Figure 4;
7 (a) and (b) are plan views showing various shapes of the filling structure according to the present invention,
Figure 8 is a side cross-sectional view showing a case where an inclined surface is formed in the filling structure according to the present invention;
Figures 9 (a) to (c) are side cross-sectional views showing the manufacturing process of the semiconductor package according to the present invention.

Hereinafter, the configuration and operation of specific embodiments of the present invention will be described in detail with reference to the attached drawings.

Here, in adding reference numerals to components in each drawing, it should be noted that identical components are indicated with the same reference numerals as much as possible, even if they are shown in different drawings.

Figure 4 is a plan view showing a semiconductor package for improving bonding coverage according to the present invention, and Figure 5 is a cross-sectional view taken along line II' of Figure 4.

Referring to FIG. 4, the semiconductor package 100 for improving bonding coverage according to a preferred embodiment of the present invention includes a substrate 110, a semiconductor chip 120, an NCF 130, and a filling structure 140. It can be included.

A detailed description of the configuration of the present invention is as follows.

Referring to FIG. 5, the substrate 110 forms the main body for forming the semiconductor package 100, and the upper surface of the substrate 110 has pads at corresponding positions so as to be electrically connected to the semiconductor chip 120. (111) may be provided.

The semiconductor chip 120 may be provided with a plurality of conductive bumps 121 on one surface so as to be electrically connected to the pad 111 on the upper surface of the substrate 110. Since the configuration for electrically connecting the substrate 110 and the semiconductor chip 120 is a known technology, detailed description thereof will be omitted.

The NCF 130 is attached to one side of the semiconductor chip 120 and covers a plurality of conductive bumps 121, and can serve as a kind of adhesive to bond the substrate 110 and the semiconductor chip 120. .

The filling structure 140 may be formed at corresponding positions on the upper surface of the substrate 110 where the four corners of one side of the semiconductor chip 120 are disposed before the TCB process of the semiconductor chip. This filling structure 140 is an empty space E between the four corners of the semiconductor chip 120 and the substrate 110 during the TCB process of the semiconductor chip 120 using the NCF 130 (see FIG. 6). can fill in.

Specifically, the filling structure 140 is not additionally installed in the empty space E after performing the TCB process, but is formed integrally with the upper surface of the substrate 110 during the design stage of the semiconductor package 100. It can be composed of: Accordingly, in order to prevent the lifting phenomenon due to insufficient coverage of the NCF 130 at the four corners of the semiconductor chip 120, further compression may not be performed during the TCB process, and the fillet 131 and coverage of the semiconductor chip 120 may be maintained. It can be fundamentally improved.

In another embodiment, the filling structure 140 may be formed as a separate structure and then applied to the corresponding position on the upper surface of the substrate 110 before the TCB process. In this case, the filling structure 140 may be formed of any one of metal, silicon, and inorganic materials.

Meanwhile, in the present invention, the filling structure 140 is shown and described as an example in which the filling structure 140 is formed in a rectangular shape (see FIG. 4), but it can be changed and applied to various shapes.

As an example, referring to (a) of FIG. 7, the filling structure 140 may be changed to a triangle when viewed from a plan view. In this case, the hypotenuse 141 of the triangle may be arranged to face each other at the four corners of the semiconductor chip 120 toward the center. That is, during the TCB process, the hypotenuse 141 may contact the NCF 130.

As another example, referring to (b) of FIG. 7, the filling structure 140 may be formed in a fan shape when viewed in plan. In this case, the fan-shaped arc portions 143 are arranged to face each other in the diagonal direction at the four corners of the semiconductor chip 120 and may contact the NCF 130.

In this way, by applying the filling structure 140 in various shapes, the NCF 130 can be smoothly filled in the four corners of the semiconductor chip 120 during the TCB process.

Meanwhile, referring to FIG. 8 , a portion of the filling structure 140 that is in contact with the NCF 130 during the TCB process may be formed as an inclined surface 145. Accordingly, the NCF (130), which spreads to the four corners of the semiconductor chip (120) by compression during the TCB process, can move smoothly along the inclined surface (145), and an empty space (E) is formed at the part in contact with the filling structure (140). This can be prevented as much as possible.

On the other hand, in the present invention, an example of the case where the filling structure 140 is formed on the upper surface of the substrate 110 is shown and described, but the filling structure 140 is a semiconductor chip facing the upper surface of the substrate 110. It can be changed and applied to the case formed on one side of (120).

Then, the semiconductor package manufacturing process for improving bonding coverage according to the present invention configured as described above will be described with reference to FIGS. 9 and 10.

First, prepare a semiconductor chip 120 with a conductive bump 121 on one side.

And, in order to cover the conductive bump 121 and bond the semiconductor chip 120 to the substrate 110, the NCF 130 is attached to one surface of the semiconductor chip 120 (S1).

A plurality of filling structures 140 are formed at corresponding positions on the upper surface of the substrate 110 where the four corners of one side of the semiconductor chip 120 are disposed (S3). In this case, the filling structure 140 may be formed integrally with the upper surface of the substrate 110 during the design stage of the semiconductor package 100, or may be attached as a separate structure.

Then, one side of the semiconductor chip 120 is placed on the upper surface of the substrate 110 so that the conductive bumps 121 are electrically connected (see (a) of FIG. 9) (S5).

Then, the semiconductor chip 120 is bonded to the substrate 110 through a TCB process (see (b) of FIG. 9). In this case, as the filling structures 140 are disposed at each of the four corners of the semiconductor chip 120, the NCF 15 is not filled due to insufficient flow near the four corners of the semiconductor chip 10, creating an empty space E. (see (a) of FIG. 2) can be prevented from occurring (see (c) of FIG. 9) (S7).

In the semiconductor package 100 for improving bonding coverage according to the present invention as described above, the filling structure 140 is formed in advance between the four corners of one side of the semiconductor chip 120 and the substrate 110, and then the NCF (130) is formed. ), the empty space at the four corners of one side of the semiconductor chip 120 can be filled. Accordingly, the fillet 131 and coverage of the semiconductor chip 120 can be fundamentally improved.

In the above, the present invention has been shown and described with reference to specific specific embodiments, but the present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the technical spirit of the present invention.

100: semiconductor package 110: substrate
111: pad 120: semiconductor chip
121: conductive bump 130: NCF
131: fillet 140: structure for filling
141: hypotenuse 143: arc
145: Slope E: Empty space

Claims (7)

Board;
a semiconductor chip having a plurality of conductive bumps on one surface so as to be electrically connected to a pad on the upper surface of the substrate;
an NCF attached to one surface of the semiconductor chip, covering the plurality of conductive bumps, and bonding the substrate and the semiconductor chip; and
Including a plurality of filling structures formed at corresponding positions on the upper surface of the substrate where the four corners of one side of the semiconductor chip are disposed before the TCB process of the semiconductor chip,
A semiconductor package in which the filling structure fills the empty space between the four corners of the semiconductor chip and the substrate during the TCB process of the semiconductor chip using the NCF.
According to paragraph 1,
The filling structure is,
A semiconductor package that is formed integrally with the upper surface of the substrate during the design stage of the semiconductor package.
According to paragraph 1,
The filling structure is,
A semiconductor package formed as a separate structure and then integrally attached to the upper surface of the substrate.
According to paragraph 3,
The filling structure is,
A semiconductor package made of any one of metal, silicon, and inorganic materials.
According to paragraph 1,
The filling structure is,
A semiconductor package formed in any of the following shapes: square, triangle, or fan.
According to paragraph 1,
The filling structure is,
A semiconductor package wherein a portion in contact with the NCF during the TCB process is formed as an inclined surface.
Preparing a semiconductor chip with conductive bumps on one side;
Attaching an NCF to one surface of the semiconductor chip;
forming a plurality of filling structures at corresponding positions on the upper surface of the substrate where four corners of one side of the semiconductor chip are disposed;
placing one surface of the semiconductor chip on the upper surface of the substrate so that the conductive bumps are electrically connected; and
A semiconductor package manufacturing method comprising: compressing the semiconductor chip on a substrate through a TCB process.

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