KR20240010393A - Focus ring, apparatus for substrate processing including the same, and method for semiconductor device manufacturing using the same - Google Patents

Abstract

A focus ring according to the present invention has a central axis extending in a first direction, wherein the upper surface of the focus ring has a first inner diameter, the lower surface of the focus ring has a second inner diameter, and the first inner diameter is It is smaller than the second inner diameter, and the inner surface of the focus ring is located between the upper surface and the lower surface and includes a first inner surface and a second inner surface, and the second inner surface is from the first inner surface. Extending downward, the angle formed by the first inner surface with the first direction may be different from the angle formed by the second inner surface with the first direction.

Description

A focus ring, a substrate processing device including the same, and a semiconductor device manufacturing method using the same. {Focus ring, apparatus for substrate processing including the same, and method for semiconductor device manufacturing using the same}

The present invention relates to a focus ring, a substrate processing device including the same, and a semiconductor device manufacturing method using the same. More specifically, the present invention relates to a focus ring that can be aligned with an electrostatic chuck, a substrate processing device including the same, and a semiconductor device manufacturing method using the same. It's about.

Semiconductor devices can be manufactured through various processes. For example, semiconductor devices may be manufactured through a photo process, an etching process, a deposition process, etc. on a wafer such as silicon. In an etching process for manufacturing semiconductor devices, plasma may be used. In a wafer etching process using plasma, a focus ring may be used to control the distribution of plasma.

The problem to be solved by the present invention is to provide a focus ring that can improve substrate distribution by aligning the central axis, a substrate processing device including the same, and a method of manufacturing a semiconductor device using the same.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the description below.

In order to achieve the problem to be solved, a focus ring according to embodiments of the present invention has a central axis extending in a first direction, wherein the upper surface of the focus ring has a first inner diameter, and the lower surface of the focus ring has a second inner diameter, wherein the first inner diameter is smaller than the second inner diameter, and the inner surface of the focus ring is located between the upper surface and the lower surface and includes a first inner surface and a second inner surface, The second inner surface extends downward from the first inner surface, and the angle that the first inner surface makes with the first direction may be different from the angle that the second inner surface makes with the first direction.

In order to achieve the problem to be solved, a substrate processing apparatus according to embodiments of the present invention includes an electrostatic chuck having a chuck for supporting a substrate, a central axis extending in a first direction, and a focus ring located on a side of the chuck. Including, the upper surface of the focus ring has a first inner diameter, the lower surface of the focus ring has a second inner diameter, the first inner diameter is smaller than the second inner diameter, and the chuck may have a diameter of 298.6 mm to 300 mm. there is.

In order to achieve the problem to be solved, a substrate processing apparatus according to embodiments of the present invention includes an electrostatic chuck, a focus ring located on the electrostatic chuck and having a central axis extending in a first direction, and a focus ring surrounding the focus ring. outer ring; wherein the inner surface of the focus ring includes a first inner surface and a second inner surface, the second inner surface is in contact with the first inner surface, and the first inner surface is larger than the second inner surface. It may be closer to the electrostatic chuck.

In order to achieve the problem to be solved, a method of manufacturing a semiconductor device according to embodiments of the present invention includes loading a substrate on an electrostatic chuck, performing a semiconductor process, removing the substrate from the electrostatic chuck, and Replacing a focus ring, wherein the focus ring has a central axis extending in a first direction, and an inner surface of the focus ring includes a first inner surface and a second inner surface extending from the first inner surface, and , Replacing the focus ring may include at least a portion of the second inner surface of the focus ring coming into contact with the electrostatic chuck and aligning the center of the electrostatic chuck with the central axis of the focus ring.

According to the focus ring of the present invention, the substrate processing device including the same, and the method of manufacturing a semiconductor device using the same, the upper surface of the focus ring may have a first inner diameter, and the lower surface of the focus ring may have a second inner diameter. Since the first inner diameter is smaller than the second inner diameter, the upper surface of the focus ring may be closer to the electrostatic chuck than the lower surface of the focus ring. Because of this, the central axis of the focus ring can be aligned with the center of the electrostatic chuck. Accordingly, the gap between the focus ring and the electrostatic chuck can be uniform in all directions.

According to the focus ring of the present invention, the substrate processing device including the same, and the method of manufacturing a semiconductor device using the same, the distance between the focus ring and the electrostatic chuck is uniform in all directions, so the substrate can be accurately positioned on the electrostatic chuck. Because of this, the electrostatic chuck can have the same diameter as the substrate, and a semiconductor process can be performed under conditions where the center area and edge area of the substrate are the same. Accordingly, dispersion within the substrate can be improved.

According to the focus ring of the present invention, the substrate processing device including the same, and the method of manufacturing a semiconductor device using the same, the inner surface of the focus ring may include a first inner surface and a second inner surface. The angle formed by the first inner surface with the vertical direction may be parallel. The second inner surface extends from below the first inner surface, and the angle formed with the vertical direction may be an acute angle. As a result, it is possible to prevent arcing of the focus ring and cuts to workers. Additionally, since a spare space is provided between the lower part of the focus ring and the electrostatic chuck, it is possible to prevent the focus ring from breaking due to thermal expansion of the focus ring during a semiconductor process.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view illustrating an electrostatic chuck, a focus ring, and an outer ring according to an embodiment of the present invention, and is an enlarged view of area A of FIG. 1.
Figure 3 is a perspective view showing a focus ring according to an embodiment of the present invention.
Figure 4 is a plan view showing a focus ring according to an embodiment of the present invention.
FIGS. 5 to 9 are enlarged views for explaining an electrostatic chuck and a focus ring according to embodiments of the present invention, and are enlarged views of area B of FIG. 2.
FIG. 10 is an enlarged view for explaining a focus ring according to an embodiment of the present invention, and is an enlarged view of area C of FIG. 2.
11 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
FIGS. 12 to 14 are enlarged views for explaining an electrostatic chuck and a focus ring according to an embodiment of the present invention, and are enlarged views of area D of FIG. 11.
Figure 15 is a flowchart showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.
16 to 20 are cross-sectional views sequentially showing the method of manufacturing a semiconductor device according to the flow chart of FIG. 15.
FIGS. 21 and 22 are enlarged views for explaining replacement of the focus ring according to an embodiment of the present invention, and are enlarged views of area E of FIG. 20.

Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. The same reference signs may refer to the same elements throughout the specification.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus 1 may be provided. The substrate processing device 1 may be a device that performs a semiconductor process on a substrate. For example, the semiconductor process may be an etching process, a deposition process, an ion implantation process, a cleaning process, and a photolithography process, and preferably may be an etching process. there is.

For example, the substrate processing device 1 may be a device that etches one side of a substrate using plasma. The substrate processing apparatus 1 can generate plasma in various ways. For example, the substrate processing apparatus 1 may generate plasma using a method such as Capacitor Couple Plasma (CCP), Inductive Coupled Plasma (ICP), or Magnetically Enhanced RIE (MERIE). However, the present invention is not limited thereto. That is, the substrate processing apparatus 1 can clean one side of the substrate using plasma. Alternatively, the substrate processing apparatus 1 may not use plasma.

Hereinafter, for convenience, the description will be based on the substrate processing device 1 that generates plasma using the CCP method.

The substrate processing apparatus 1 includes a process chamber (CH), a gas supply unit (GS), a ring lift pin driver (RPM), a substrate lift pin driver (WPM), a first RF power supply unit (ED1), and a second RF power supply unit ( ED2) may be included.

The process chamber (CH) includes a shower head (SH), an electrostatic chuck (5), a confinement ring (CR), a focus ring (FR), a coupling ring (6), a ground ring (8), an outer ring (9), and a substrate. It may include a lift pin (4) and a ring lift pin (2). The process chamber (CH) may provide a process space (PS). That is, the shower head (SH), electrostatic chuck (5), confinement ring (CR), focus ring (FR), coupling ring (6), ground ring (8), and outer ring (9) in the process space (PS). , substrate lift pins 4, and ring lift pins 2 may be positioned.

The gas supply unit (GS) is located outside the process chamber (CH) and may be connected to the process chamber (CH). For example, the gas supply unit GS may be connected to the process space PS through the gas inlet GI. That is, the gas supply unit GS may supply process gas to be plasma into the process space PS through the gas inlet GI. For example, the gas supply unit GS may further include a gas tank and a compressor.

The shower head (SH) may be located at the top of the process chamber (CH). A distribution space (DH) may be provided on the shower head (SH). The distribution space (DH) may be connected to the gas supply (GS) through the gas inlet (GI). The shower head (SH) may provide outlets (GH). From a plan view, the distribution holes GH may be arranged along the second direction D2 and the third direction D3. Because of this, the process gas supplied from the gas supply unit GS can be uniformly supplied onto the electrostatic chuck 5 through the distribution holes GH. The lower surface of the shower head (SH) may have a planar shape , but the present invention is not limited thereto.

The confinement ring (CR) may surround the space between the shower head (SH) and the electrostatic chuck (5). The confinement ring (CR) may provide a slit (CRe). A plurality of slits (CRe) may be provided. From a plan view, a plurality of slits CRe may be provided at regular intervals. Because of this, the process gas supplied from the gas supply unit GS can escape uniformly through the plurality of slits CRe. The confinement ring CR may include a ground member CRg and may be grounded by the ground member CRg.

The electrostatic chuck 5 may be located in the center of the process chamber (CH). A substrate may be placed on the electrostatic chuck 5. The electrostatic chuck 5 may support and/or secure the substrate. For example, when a substrate is placed on the electrostatic chuck 5, the electrostatic chuck 5 can fix the substrate in a certain position using electrostatic force. A coupling ring (6), a ground ring (8) and an outer ring (9) may be provided on the side of the electrostatic chuck (5). That is, each of the coupling ring 6, ground ring 8, and outer ring 9 may surround the electrostatic chuck 5.

The focus ring FR is located on the electrostatic chuck 5 and may surround the substrate placed on the electrostatic chuck 5. The focus ring (FR) may be a rotating body based on the central axis (CA). The central axis CA of the focus ring FR may extend in the first direction D1. For example, the focus ring (FR) may include silicon (Si) and/or silicon carbide (SiC), but is not limited thereto. That is, the focus ring FR may include quartz and/or boron carbide (B ₄ C). The focus ring (FR) may be separated into two or more members. Each of the two or more members of the focus ring FR may include different materials.

The coupling ring 6 is located below the focus ring FR and may be a rotating body based on the central axis CA. That is, the coupling ring 6 is located between the focus ring FR and the ground ring 8, which will be described later, and may surround the electrostatic chuck 5. Specifically, from a plan view, the coupling ring 6 may surround the electrostatic chuck 5 from the outside. For example, the coupling ring 6 may include alumina (Al ₂ O ₃ ).

The ground ring 8 and the outer ring 9 may surround the electrostatic chuck 5. That is, the ground ring 8 and the outer ring 9 may be rotating bodies based on the central axis CA. Specifically, the coupling ring 6 may be located on the ground ring 8. The outer ring 9 is located on the ground ring 8 and the coupling ring 6 and may surround the focus ring FR. The outer ring 9 may include a different material from the focus ring FR, but is not limited thereto.

The substrate lift pin 4 may extend in the first direction D1. The substrate lift pin 4 may penetrate the electrostatic chuck 5 up and down. That is, the substrate lift pins 4 may be provided within the electrostatic chuck 5. The substrate lift pin 4 may be connected to a substrate lift pin driver (WPM). The substrate lift pin 4 may be moved up and down by the substrate lift pin driver (WPM). The substrate lift pins 4 move up and down and can load or unload a substrate onto the electrostatic chuck 5. A plurality of substrate lift pins 4 may be provided. For example, three substrate lift pins 4 may be provided, but is not limited thereto. The plurality of substrate lift pins 4 may be arranged to be spaced apart from each other in the horizontal direction. Hereinafter, for convenience, the substrate lift pin 4 will be described in the singular.

The ring lift pin 2 may extend in the first direction D1. The ring lift pin (2) may be located on the outside of the electrostatic chuck (5). The ring lift pin (2) can penetrate the coupling ring (6), the ground ring (8), and the outer ring (9) up and down. That is, the ring lift pin (2) may be provided in the coupling ring (6), the ground ring (8) and the outer ring (9). The ring lift pin 2 may be moved up and down by a ring lift pin driving unit (RPM). The ring lift pin (2) moves up and down and can load or unload the focus ring (FR). A plurality of ring lift pins 2 may be provided. For example, three ring lift pins 2 may be provided, but the present invention is not limited thereto. The plurality of ring lift pins 2 may be spaced apart from each other in the horizontal direction. Hereinafter, for convenience, the ring lift pin 2 will be described in the singular.

The substrate lift pin driver (WPM) and the ring lift pin driver (RPM) can each move the substrate lift pin 4 and the ring lift pin 2 up and down. For example, the substrate lift pin driver (WPM) and the ring lift pin driver (RPM) may each include an actuator such as an electric motor and/or a hydraulic motor. Although the substrate lift pin driver (WPM) and the ring lift pin driver (RPM) are shown as being located outside the process chamber (CH), they are not limited thereto.

The first RF power supply unit ED1 may be electrically connected to the electrostatic chuck 5. The first RF power supply unit ED1 may supply first RF power to the electrostatic chuck 5. The second RF power supply unit ED2 may be electrically connected to the outside of the electrostatic chuck 5. The second RF power supply unit ED2 may supply second RF power to the outside of the electrostatic chuck 5. The second RF power can be distinguished from the first RF power. That is, the frequency of the first RF power and the frequency of the second RF power may be different. The first RF power and the second RF power may be supplied simultaneously, or may not be supplied simultaneously.

FIG. 2 is an enlarged view illustrating an electrostatic chuck, a focus ring, and an outer ring according to an embodiment of the present invention, and is an enlarged view of area A of FIG. 1.

Hereinafter, for convenience of explanation, description of the same items as those described with reference to FIG. 1 will be omitted and differences will be described in detail.

Referring to FIG. 2, the electrostatic chuck 5 may include a plasma electrode 51 and a chuck 53. The plasma electrode 51 may include an electrode body 511 and a plateau 513.

A chuck 53 may be positioned on the plasma electrode 51. The plasma electrode 51 may support the chuck 53. The plasma electrode 51 and the chuck 53 may have a cylindrical shape. The plasma electrode 51 may be connected to the first RF power supply (ED1). The plasma electrode 51 may receive first RF power from the first RF power supply unit ED1. The plasma electrode 51 may include a conductive material. For example, the plasma electrode 51 may include aluminum (Al). When the substrate processing device (1 in FIG. 1) is a CCP device, the plasma electrode 51 may be a lower electrode. Additionally, the shower head (SH in FIG. 1) may be the upper electrode.

A plateau 513 may be located on the electrode body 511. Each of the electrode body 511 and the plateau 513 may have a cylindrical shape. The diameter of the plateau 513 may be smaller than the diameter of the electrode body 511. That is, a portion of the upper surface of the electrode body 511 may be exposed to the outside. A focus ring FR may be located on the exposed upper surface of the electrode body 511. That is, the electrode body 511 may support a portion of the focus ring FR. The upper surface of the electrode body 511 may be positioned on the same plane as the first lower surface BS1 of the focus ring FR.

The chuck 53 may be positioned on the plasma electrode 51 . A substrate may be provided on the upper surface 53t of the chuck 53. That is, the chuck 53 can support and fix the substrate while being in contact with the substrate. A plurality of burr structures may be provided on the upper surface 53t of the chuck 53 to support the substrate. Chuck 53 may include an electrode. The electrode can fix the substrate at a certain position on the chuck 53 using electrostatic force.

The coupling ring 6 may include an outer electrode 7. The outer electrode 7 is located below the focus ring FR and may be located within the coupling ring 6. The outer electrode 7 may be spaced apart from the ring lift pin 2. The outer electrode 7 may include tungsten and/or platinum. The outer electrode 7 may be electrically connected to the second RF power supply (ED2) of FIG. 1. The outer electrode 7 may receive second RF power from the second RF power supply unit ED2.

The upper and lower surfaces of the focus ring FR may have a step difference. in other words. The upper surface of the focus ring FR may include a first upper surface TS1 and a second upper surface TS2 at different levels. The lower surface of the focus ring FR may include a first lower surface BS1 and a second lower surface BS2 at different levels. The first top surface TS1 may be located at a lower level than the second top surface TS2. The first lower surface BS1 may be located at a lower level than the second lower surface BS2. The inner surface of the focus ring FR may be located between the first upper surface TS1 and the first lower surface BS1. The outer surface of the focus ring FR may be located between the second upper surface TS2 and the second lower surface BS2. In this specification, level may mean height in the first direction D1.

The focus ring (FR) may be located on the electrostatic chuck (5), the coupling ring (6) and the outer ring (9). Specifically, the first lower surface BS1 of the focus ring FR may be positioned on the same plane as the exposed upper surface of the electrode body 511 and the upper surface of the coupling ring 6. The second lower surface BS2 of the focus ring FR may be located on a portion of the outer ring 9.

The first upper surface TS1 of the focus ring FR may be located at a lower level than the upper surface 53t of the chuck 53. Because of this, when the substrate is positioned on the electrostatic chuck 5, the substrate may not be in contact with the first upper surface TS1 of the focus ring FR. The second upper surface TS2 of the focus ring FR may be located at a lower level than the upper surface 9t of the outer ring 9. However, the present invention is not limited thereto. That is, the first upper surface TS1 of the focus ring FR may be located on the same plane or at a higher level than the upper surface 53t of the chuck 53. The second upper surface TS2 of the focus ring FR may be located on the same plane as the upper surface 9t of the outer ring 9 or may be higher.

Although not shown in the drawing, a heat transfer pad (not shown) may be located between the electrostatic chuck 5 and the focus ring FR. The heat transfer pad can transfer temperature and perform an adhesive function. That is, the heat transfer pad can transfer the temperature of the electrostatic chuck 5 to the focus ring FR and can fix the focus ring FR so that it does not move. For example, the heat transfer pad may include fillers such as silicon (Si)-based materials, carbon nanotubes (CNTs), and/or aluminum (Al), but is not limited thereto.

The ring lift pin (2) may be located below the focus ring (FR). The ring lift pin 2 may contact the second lower surface BS2 of the focus ring FR. The ring lift pin 2 may be located outside the outer electrode 7. From a plan view, the ring lift pin 2 may not overlap the outer electrode 7 . The ring lift pin (2) can penetrate the coupling ring (6), the ground ring (8), and the outer ring (9) up and down. That is, the coupling ring 6, the ground ring 8, and the outer ring 9 may provide pin insertion holes (unmarked). The ring lift pin (2) is located in the pin insertion hole and can move up and down.

Figure 3 is a perspective view showing a focus ring according to an embodiment of the present invention. Figure 4 is a plan view showing a focus ring according to an embodiment of the present invention.

Referring to FIGS. 3 and 4 , the focus ring FR may be a rotating body having a central axis CA extending in the first direction D1. The inner surface of the focus ring (FR) may face the central axis (CA). The inner surface of the focus ring (FR) may define a space through which the central axis (CA) passes. The outer surface of the focus ring (FR) may face in a direction opposite to the central axis (CA). The inner diameter of the focus ring (FR) may refer to the distance between the inner surface (IS) of the focus ring (FR) while passing through the central axis (CA). The outer diameter of the focus ring (FR) may refer to the distance between the outer surface (OS) of the focus ring (FR) while passing through the central axis (CA). That is, the distance from the central axis CA to the inner surface IS of the focus ring FR may be half of the inner diameter of the focus ring FR. The distance from the central axis CA to the outer surface OS of the focus ring FR may be half of the outer diameter of the focus ring FR.

The substrate lift pin 4 may be located within a space through which the central axis CA passes. From a plan view, the substrate lift pins 4 may not overlap the focus ring FR. Three substrate lift pins 4 may be provided. Three substrate lift pins 4 may form the three vertices of a triangle. That is, the angle between the three substrate lift pins 4 may be 120°.

The ring lift pin (2) may be located below the focus ring (FR). Specifically, the ring lift pin 2 may be located closer to the outer surface of the focus ring FR than to the inner surface of the focus ring FR. Three ring lift pins (2) may be provided. The three ring lift pins (2) can form the three vertices of a triangle. That is, the angle between the three ring lift pins 2 may be 120°. Accordingly, the arrangement of the three ring lift pins 2 may be similar to the arrangement of the three substrate lift pins 4.

However, the present invention is not limited thereto. That is, the number of substrate lift pins 4 and the angle between the substrate lift pins 4 may be provided in various ways. Additionally, the number of ring lift pins 2 and the angle between the ring lift pins 2 may be provided in various ways. Accordingly, the arrangement of the substrate lift pins 4 and the arrangement of the ring lift pins 2 may be different.

FIGS. 5 to 9 are enlarged views for explaining an electrostatic chuck and a focus ring according to embodiments of the present invention, and are enlarged views of area B of FIG. 2 .

Hereinafter, for convenience of explanation, description of the same items as those described with reference to FIGS. 1 and 2 will be omitted and differences will be described in detail.

Referring to FIG. 5 , the inner surface IS of the focus ring FR may be located between the first upper surface TS1 and the first lower surface BS1 of the focus ring FR. The inner surface (IS) of the focus ring (FR) may include a first inner surface (IS1) and a second inner surface (IS2).

The first inner surface IS1 may be perpendicular to the first upper surface TS1. That is, the angle between the first inner surface IS1 and the first upper surface TS1 may be 90°. In other words, the first inner surface IS1 may be parallel to the first direction D1, and the angle formed by the first inner surface IS1 with the first direction D1 may be 0°.

The second inner surface IS2 may extend from the first inner surface IS1. That is, the second inner surface IS2 may be in contact with the first inner surface IS1 and may be located between the first inner surface IS1 and the first lower surface BS1. The second inner surface (IS2) and the first inner surface (IS1) may share the circumference of one circle at the point where they contact each other. The second inner surface IS2 may form a constant angle θ with the first direction D1. That is, the angle θ formed by the second inner surface IS2 with the first direction D1 may be different from the angle formed by the first inner surface IS1 with the first direction D1. The second inner surface IS2 may not be parallel to the first direction D1. The second inner surface IS2 may not be perpendicular to the first upper surface TS1 or the first lower surface BS1. The angle θ formed by the second inner surface IS2 and the first direction D1 may be an acute angle. For example, the angle θ formed by the second inner surface IS2 and the first direction D1 may be greater than 0° and less than or equal to about 5°, but is not limited thereto.

The first upper surface TS1 may have a first inner diameter R1. The first lower surface BS1 may have a second inner diameter R2. The first inner diameter (R1) may be smaller than the second inner diameter (R2). That is, the first upper surface TS1 may be closer to the electrostatic chuck 5 than the first lower surface BS1. For example, the difference between the first inner diameter (R1) and the second inner diameter (R2) may be about 0.01 mm to about 0.5 mm, but is not limited thereto.

The distance between the first inner surface IS1 and the side surface 5s of the electrostatic chuck 5 may be the first distance L1. The distance between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5 may increase from the first upper surface TS1 to the first lower surface BS1. The average distance between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5 may be the second distance L2. The first distance L1 may be smaller than the second distance L2. That is, the first inner surface IS1 may be closer to the side surface 5s of the electrostatic chuck 5 than the second inner surface IS2. A spare space S may be provided between the side surface 5s of the electrostatic chuck 5 and the second inner surface IS2.

Referring to FIG. 6 , the first inner surface IS1 may have a convex shape toward the side surface 5s of the electrostatic chuck 5. In other words, the first inner surface IS1 may have a convex shape toward the central axis CA of FIG. 3. The distance between the first inner surface IS1 and the side surface 5s of the electrostatic chuck 5 may increase from the first upper surface TS1 to the first lower surface BS1.

The second inner surface IS2 extends downward from the first inner surface IS1 and may form a constant angle θ with the first direction D1. That is, the second inner surface IS2 may not be parallel to the first direction D1. Accordingly, the angle θ formed by the second inner surface IS2 with the first direction D1 may be different from the angle formed by the first inner surface IS1 with the first direction D1. The angle θ formed between the second inner surface IS2 and the first direction D1 may be an acute angle. For example, the angle θ formed between the second inner surface IS2 and the first direction D1 may be greater than 0° and less than or equal to about 5°, but is not limited thereto.

The place where the first inner surface (IS1) and the second inner surface (IS2) contact each other may have a third inner diameter (R3). The third inner diameter (R3) may be larger than the first inner diameter (R1). The third inner diameter (R3) may be smaller than the second inner diameter (R2). That is, the third inner diameter (R3) may be located between the first inner diameter (R1) and the second inner diameter (R2).

Alternatively, the second inner surface IS2 may be parallel to the first direction D1. That is, the angle between the second inner surface IS2 and the first direction D1 may be 0°. In this case, the second inner diameter R2 may be substantially the same as the third inner diameter R3.

Referring to FIG. 7 , the inner surface (IS) of the focus ring (FR) may further include a third inner surface (IS3). The third inner surface IS3 may be located between the first inner surface IS1 and the second inner surface IS2. That is, the third inner surface IS3 may extend downward from the first inner surface IS1, and the second inner surface IS2 may extend downward from the third inner surface IS3. The first inner surface (IS1) and the third inner surface (IS3) may share the perimeter of one circle, and the third inner surface (IS3) and the second inner surface (IS2) may share the perimeter of another circle. can be shared.

The first and second inner surfaces IS1 and IS2 may be parallel to the first direction D1. That is, the first and second inner surfaces IS1 and IS2 may be perpendicular to the first upper surface TS1 or the first lower surface BS1. The first inner surface IS1 and the second inner surface IS2 may be parallel to each other. The third inner surface IS3 may form a constant angle θ with the first direction D1. The third inner surface IS3 may not be parallel to the first direction D1. The angle θ formed by the third inner surface IS3 and the first direction D1 may be an acute angle. For example, the angle θ formed by the third inner surface IS3 and the first direction D1 may be greater than 0° and less than or equal to about 5°. However, the present invention is not limited thereto. For example, the second inner surface IS2 is not parallel to the first direction D1, and the angle formed by the second inner surface IS2 with the first direction D1 is the third inner surface IS3. 1 The angle formed with direction (D1) may be different.

The first inner surface IS1 may be closer to the side surface 5s of the electrostatic chuck 5 than the second and third inner surfaces IS2 and IS3. The second inner surface IS2 may be spaced further apart from the side surface 5s of the electrostatic chuck 5 than the first and third inner surfaces IS1 and IS3.

Referring to FIG. 8, the third inner surface IS3 may have a convex shape toward the side surface 5s of the electrostatic chuck 5. In other words, the third inner surface IS3 may have a convex shape toward the central axis CA of FIG. 3. The distance between the third inner surface IS3 and the side surface 5s of the electrostatic chuck 5 may increase from the first upper surface TS1 to the first lower surface BS1.

The second inner surface IS2 may form a constant angle θ with the first direction D1. That is, the second inner surface IS2 may not be parallel to the first direction D1. The angle θ formed by the second inner surface IS2 with the first direction D1 may be different from the angle formed by the first inner surface IS1 with the first direction D1. The angle θ formed by the second inner surface IS2 and the first direction D1 may be an acute angle. For example, the angle θ formed by the second inner surface IS2 and the first direction D1 may be greater than 0° and less than or equal to about 5°, but is not limited thereto.

The place where the second inner surface (IS2) and the third inner surface (IS3) contact each other may have a third inner diameter (R3). The third inner diameter (R3) may be larger than the first inner diameter (R1) and smaller than the second inner diameter (R2).

Alternatively, the second inner surface IS2 may be parallel to the first direction D1. That is, the angle θ formed by the second inner surface IS2 and the first direction D1 may be 0°. In this case, the third inner diameter (R3) may be substantially the same as the second inner diameter (R2).

Referring to FIGS. 5 to 8 , the first inner diameter (R1) may be smaller than the second inner diameter (R2). That is, the first upper surface TS1 may be closer to the side surface 5s of the electrostatic chuck 5 than the first lower surface BS1. Additionally, the first inner surface IS1 may be closer to the electrostatic chuck 5 than the second inner surface IS2. The distance between the first inner surface IS1 and the side surface 5s of the electrostatic chuck 5 may be smaller than the distance between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5. Since the upper part of the focus ring FR is closer to the electrostatic chuck 5 than the lower part of the focus ring FR, it is possible to prevent the focus ring FR from being biased in any direction of the electrostatic chuck 5. That is, the first inner surface IS1 may function as an auxiliary tool used to align the focus ring FR and the electrostatic chuck 5. Therefore, the focus ring (FR) of the present invention can align the center of the electrostatic chuck (5) and the central axis (CA) of the focus ring (FR) without an auxiliary tool. For this reason, in the method of manufacturing a semiconductor device described later, plasma can be uniformly generated on the substrate, and the distribution of the semiconductor devices in the substrate can be improved.

Additionally, a spare space (S) may be provided between the focus ring (FR) and the electrostatic chuck (5). Specifically, a spare space S may be provided between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5. In the method of manufacturing a semiconductor device described later, the semiconductor process may be performed at a high temperature, so the focus ring FR may thermally expand during the semiconductor process. That is, the spare space S may be a space prepared for thermal expansion of the focus ring FR. Therefore, the spare space S can prevent the focus ring FR from breaking due to thermal expansion.

Additionally, the first inner surface IS1 may be perpendicular to or substantially perpendicular to the first upper surface TS1. In other words, the angle between the first inner surface IS1 and the first upper surface TS1 may be about 90°. That is, since the angle between the first inner surface (IS1) and the first upper surface (TS1) is not an acute angle of 60° or less, the place where the first upper surface and the first inner surface (IS) of the focus ring (FR) contact is It may not be sharp. As a result, cut accidents caused by the focus ring (FR) can be prevented, and RF power is not concentrated, thereby preventing arcing of the focus ring (FR).

Referring to FIG. 9, the inner surface (IS) of the focus ring (FR) may be located between the first upper surface (TS1) and the first lower surface (BS1), and the first inner surface (IS1) and the second inner surface (IS2) may be included. The second inner surface (IS2) may extend from the first inner surface (IS1), and the second inner surface (IS2) and the first inner surface (IS1) may share the circumference of one circle at the point where they contact each other. there is.

The first inner surface IS1 may form a constant angle θ with the first direction D1. That is, the first inner surface IS1 may not be parallel to the first direction D1. The angle θ formed between the first inner surface IS1 and the first direction D1 may be an acute angle. For example, the angle θ formed between the first inner surface IS1 and the first direction D1 may be greater than 0° and less than or equal to about 5°, but is not limited thereto. Accordingly, the distance between the first inner surface IS1 and the side surface 5s of the electrostatic chuck 5 may become closer from the first upper surface TS1 to the first lower surface BS1. The average distance between the first inner surface IS1 and the side surface 5s of the electrostatic chuck 5 may be the first distance L1.

The second inner surface IS2 may be parallel to the first direction D1. Accordingly, the distance between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5 may be constant. The distance between the second inner surface IS2 and the side surface 5s of the electrostatic chuck 5 may be the second distance L2. The second distance L2 may be smaller than the first distance L1.

The first upper surface TS1 may have a first inner diameter R1. The first lower surface BS1 may have a second inner diameter R2. The first inner diameter (R1) may be larger than the second inner diameter (R2). For example, the difference between the first inner diameter (R1) and the second inner diameter (R2) may be about 0.01 mm to 0.5 mm.

However, the present invention is not limited to this. That is, various embodiments of the focus ring FR in which the first inner diameter R1 is larger than the second inner diameter R2 may be provided. For example, the focus ring FR described in FIGS. 5 to 8 may be vertically symmetrical.

FIG. 10 is an enlarged view for explaining a focus ring according to an embodiment of the present invention, and is an enlarged view of area C of FIG. 2.

Hereinafter, for convenience of explanation, description of the same items as those described with reference to FIGS. 1 and 2 will be omitted and differences will be described in detail.

Referring to FIG. 10 , the outer surface OS of the focus ring FR may be located between the second upper surface TS2 and the second lower surface BS2 of the focus ring FR. The outer surface (OS) of the focus ring (FR) may include a first outer surface (OS1) and a second outer surface (OS2).

The first outer surface OS1 may be perpendicular to the second upper surface TS2 or the second lower surface BS2. That is, the angle between the first outer surface OS1 and the second upper surface TS2 or the second lower surface BS2 may be 90°. In other words, the first outer surface OS1 may be parallel to the first direction D1, and the angle formed by the first outer surface OS1 with the first direction D1 may be 0°. Accordingly, the distance between the first outer surface OS1 and the side surface of the outer ring 9 may be constant.

The second outer surface OS2 may extend downward from the first outer surface OS1. That is, the second outer surface OS2 may be in contact with the first outer surface OS1 and may be located between the first outer surface OS1 and the second lower surface BS2. The second outer surface (OS2) and the first outer surface (OS1) may share the circumference of a circle at a place where they contact each other. The second outer surface OS2 may form a constant angle θ with the first direction D1. That is, the angle θ formed by the second outer surface OS2 with the first direction D1 may be different from the angle formed by the first outer surface OS1 with the first direction D1. The second outer surface OS2 may not be parallel to the first direction D1. The second outer surface OS2 may not be perpendicular to the second upper surface TS2 or the second lower surface BS2. Accordingly, the distance between the second outer surface OS2 and the outer ring 9 may increase from top to bottom. The angle θ formed by the second outer surface OS2 and the first direction D1 may be an acute angle. For example, the angle θ formed by the second outer surface OS2 and the first direction D1 may be greater than 0° and less than or equal to about 5°, but is not limited thereto.

The second upper surface TS2 may have a first outer diameter R4. The second lower surface BS2 may have a second outer diameter R5. The first outer diameter (R4) may be larger than the second outer diameter (R5). That is, the second upper surface TS2 may be closer to the outer ring 9 than the second lower surface BS2. In other words, the first outer surface OS1 may be closer to the outer ring 9 than the second outer surface OS2.

However, the present invention is not limited thereto. That is, the outer surface (OS) of the focus ring (FR) of the present invention may be provided in various forms. For example, the outer surface (OS) of the focus ring (FR) may be left and right symmetrical to the inner surface (IS) of the focus ring (FR) described in FIGS. 5 to 8 .

11 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention. FIGS. 12 to 14 are enlarged views for explaining an electrostatic chuck and a focus ring according to an embodiment of the present invention, and are enlarged views of area D of FIG. 11.

Referring to FIG. 11, a substrate processing apparatus 1 may be provided. A substrate W may be located within the substrate processing apparatus 1. The substrate W may be placed on the electrostatic chuck 5 and may be fixed to the electrostatic chuck 5 . The electrostatic chuck 5 may have a different diameter from the electrostatic chuck of FIG. 1 . The remaining configurations of the substrate processing apparatus 1 except the electrostatic chuck 5 may be substantially the same as those described in FIG. 1 .

Referring to FIG. 12, the substrate W of FIG. 11 may be in a state before being placed on the electrostatic chuck 5. The electrostatic chuck 5 may include a plasma electrode 51 and a chuck 53 on the plasma electrode 51 . The plasma electrode 51 may include an electrode body 511 and a plateau 513 on the electrode body 511. The electrode body 511, plateau 513, and chuck 53 of the electrostatic chuck 5 may function substantially the same as those described in FIG. 2 . That is, the plasma electrode 51 may be a lower electrode of the substrate processing apparatus 1. The chuck 53 can fix the substrate W using electrostatic force.

The electrostatic chuck 5 and chuck 53 may have a cylindrical shape. From a plan view, the chuck 53 may have a circular shape. The distance from the central axis CA to the side surface 53s of the chuck 53 may be the radius R6 of the chuck 53. The diameter of the chuck 53 may be the distance from the side surface 53s of the chuck 53 to the side surface 53s of the chuck 53 on the opposite side while passing through the central axis CA. The plateau 513 located below the chuck 53 may have substantially the same diameter as the chuck 53. That is, the side of the plateau 513 may be aligned with the side 53s of the chuck 53. For example, the diameter of the chuck 53 may be about 298.6 mm to about 300 mm.

The focus ring FR may be located on the electrode body 511 and the side surface 53s of the chuck 53. The focus ring FR may be spaced apart from the chuck 53 in a horizontal direction (eg, in the second direction D2). The focus ring FR may include a first upper surface TS1 and a second upper surface TS2 at different levels. The focus ring FR may include a first inner surface IS1 and a second inner surface IS2 that have different angles with the first direction D1. The first inner surface IS1 may be in contact with the first upper surface TS1 and may be parallel to the first direction D1. The second inner surface IS2 extends downward from the first inner surface IS1 and may not be parallel to the first direction D1. The second inner surface IS2 may form an acute angle with the first direction D1. That is, the shape of the focus ring FR may be substantially the same or similar to that described in FIGS. 5 to 8.

Referring to FIG. 13, a substrate may be positioned on the electrostatic chuck 5, and plasma PL may be formed within the substrate processing apparatus 1. The substrate W in the drawing may be an edge area of the substrate W. From a plan view, the edge area of the substrate W may surround the center area of the substrate W. The focus ring FR may be in an initial state before a semiconductor process is performed.

The substrate W is located on the upper surface 53t of the chuck 53 and can be in contact with the chuck 53. From a plan view, the substrate W may have a circular shape. The distance from the central axis CA to the side surface Ws of the substrate W may be the radius R7 of the substrate W. The radius R7 of the substrate W may be equal to the radius R6 of the chuck 53. That is, the diameter of the substrate W may be substantially the same as the diameter of the chuck 53. Because of this, the side surface Ws of the substrate W may be aligned with the side surface 53s of the chuck 53. Accordingly, since the upper surface 53t of the chuck 53 is not exposed to the plasma PL by the substrate W, the chuck 53 can be prevented from being damaged by the plasma PL.

According to another embodiment, the diameter of the substrate W may be larger than the diameter of the chuck 53. For example, the difference between the diameter of the substrate W and the diameter of the chuck 53 may be about 1.4 mm or less. Even in this case, since the upper surface 53t of the chuck 53 is completely covered by the substrate W, the chuck 53 can be prevented from being damaged by the plasma PL.

Plasma PL may be formed on the substrate W and the focus ring FR. The plasma PL may be formed from the electric field and process gas generated by the first RF power supply unit ED1 of FIG. 11 . The plasma sheath on the substrate W may have a first thickness T1. The plasma sheath on the focus ring FR may have a second thickness T2. The first thickness T1 may be substantially the same as the second thickness T2. In this specification, the plasma sheath may be a region in which the number of positive ions and neutrons is relatively greater than the number of electrons.

The distance between the upper surface (Wt) of the substrate (W) and the plasma (PL1) on the substrate (W) may be the first thickness (T1) of the plasma sheath on the substrate (W). The distance between the second upper surface TS2 of the focus ring FR and the plasma PL2 on the focus ring FR may be the second thickness T2 of the plasma sheath on the focus ring FR. That is, the distance between the upper surface (Wt) of the substrate (W) and the plasma (PL1) on the substrate (W) is the distance between the second upper surface (TS2) of the focus ring (FR) and the plasma (PL2) on the focus ring (FR) may be substantially the same as Additionally, the upper surface Wt of the substrate W may be located on the same plane as the second upper surface TS2 of the focus ring FR. As a result, plasma PL having a constant level can be formed. That is, plasma (PL) without steps can be formed.

In other words, the height of the plasma PL1 on the substrate W in the first direction D1 may be constant. Because of this, ions present in the plasma PL1 on the substrate W may move onto the substrate W parallel to the first direction D1. Since the height of the plasma PL2 on the focus ring FR is constant in the first direction D1, the ions present in the plasma PL2 on the focus ring FR are parallel to the first direction D1 in the focus ring ( FR) can be moved to the top.

Referring to FIG. 14 , the substrate W may be positioned on the electrostatic chuck 5 and plasma PL may be formed within the substrate processing apparatus 1 . The substrate W on the drawing may be an edge area of the substrate W. From a plan view, the edge area of the substrate W may surround the center area of the substrate W. The focus ring (FR) may be in a state after a semiconductor process has been performed several times. Due to the semiconductor process, the top surface of the focus ring (FR) may be etched. That is, the third upper surface TS3 of the focus ring FR may be formed by etching the second upper surface TS2 of the focus ring FR in FIG. 13 using plasma PL. For this reason, the third upper surface TS3 of the focus ring FR may be located at a lower level than the second upper surface TS2 of the focus ring FR.

Plasma PL may be formed on the substrate W and the focus ring FR. The plasma sheath on the substrate W may have a first thickness T1. The plasma sheath on the focus ring FR may have a second thickness T2. The first thickness T1 may be substantially the same as the second thickness T2. The distance between the upper surface (Wt) of the substrate (W) and the plasma (PL1) on the substrate (W) may be the first thickness (T1) of the plasma sheath on the substrate (W). The distance between the third upper surface TS3 of the focus ring FR and the plasma PL2 on the focus ring FR may be the second thickness T2 of the plasma sheath on the focus ring FR. That is, the distance between the upper surface (Wt) of the substrate (W) and the plasma (PL1) on the substrate (W) is the distance between the third upper surface (TS3) of the focus ring (FR) and the plasma (PL2) on the focus ring (FR) may be substantially the same as However, the upper surface Wt of the substrate W may be located at a higher level than the third upper surface TS3 of the focus ring FR. Because of this, the plasma PL1 on the substrate W may be located at a higher level than the plasma PL2 on the focus ring FR. That is, the plasma PL may have a step in the first direction D1.

In other words, as several semiconductor processes are performed, the level of the top surface of the focus ring FR decreases, but the level of the top surface Wt of the substrate W may be constant. That is, as the semiconductor process is performed, the top surface of the focus ring FR may become lower than the top surface Wt of the substrate W. As a result, the position at which the plasma PL2 is generated on the focus ring FR may be lowered. That is, since the height of the plasma (PL1) on the substrate (W) and the height of the plasma (PL2) on the focus ring (FR) are different from each other, the plasma (PL1) on the substrate (W) and the plasma (PL2) on the focus ring (FR) ) An inclined plasma (PL3) may be formed between the The inclined plasma PL3 may be spaced apart from the chuck 53 in the second direction D2. From a plan view, the tilted plasma PL3 and the chuck 53 may not overlap.

The height of the inclined plasma PL3 in the first direction D1 may not be constant. The height of the inclined plasma PL3 in the first direction D1 may increase as it approaches the substrate W. Because of this, ions present in the tilted plasma PL3 can move at a constant angle with the first direction D1. That is, ions present in the tilted plasma PL3 can move in the tilted direction.

Since the chuck 53 of the present invention has substantially the same diameter as the substrate W, the side surface 53s of the chuck 53 can be aligned with the side surface Ws of the substrate W. Since the inclined plasma PL3 is positioned spaced apart from the chuck 53 in the second direction D2, the tilted plasma PL3 may be positioned spaced apart from the substrate W in the second direction D2. From a two-dimensional perspective, the tilted plasma PL3 may not overlap the substrate W. Because of this, ions with an inclined direction may not move onto the top surface (Wt) of the substrate (W). That is, ions moving parallel to the first direction D1 can reach both the edge area and the center area of the substrate W. Because of this, the semiconductor pattern in the edge area and the semiconductor pattern in the center area can be formed to have the same shape. Accordingly, the distribution of the semiconductor pattern within the substrate W can be improved.

Additionally, temperature control gas may be supplied from the electrostatic chuck 5 between the upper surface 53t of the chuck 53 and the lower surface of the substrate W. The temperature control gas may be a medium that transfers the temperature of the electrostatic chuck 5 to the substrate W. For example, the temperature control gas may include helium (He). Since the chuck 53 of the present invention has substantially the same diameter as the substrate W, the temperature control gas can reach the edge area of the substrate W. Because of this, the temperature of the edge area can be controlled. Accordingly, the distribution of the semiconductor pattern within the substrate W can be improved.

Figure 15 is a flowchart showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 15, a method of manufacturing a semiconductor device may be provided. The method of manufacturing a semiconductor device may refer to a method of manufacturing a semiconductor device using the substrate processing apparatus 1 illustrated in FIG. 1 and the focus ring FR illustrated in FIGS. 1 to 10 . A method of manufacturing a semiconductor device may include loading a substrate (S10), performing a semiconductor process (S20), removing the substrate (S30), and replacing the focus ring (S40). Hereinafter, the manufacturing method of the semiconductor device of FIG. 15 will be described in detail with reference to FIGS. 16 to 22.

16 to 20 are cross-sectional views sequentially showing the method of manufacturing a semiconductor device according to the flow chart of FIG. 15. FIGS. 21 and 22 are enlarged views for explaining a focus ring according to an embodiment of the present invention, and are enlarged views of area E of FIG. 20.

16 and 17, loading the substrate (S10) involves placing the substrate W on the substrate lift pin 4 raised by the substrate lift pin driver WPM, and the substrate lift pin driver (WPM). It may include placing the substrate W on the electrostatic chuck 5 by lowering the substrate lift pin 4 by WPM) and fixing the substrate W on the electrostatic chuck 5. The substrate W may refer to a silicon (Si) wafer, etc., but is not limited thereto.

Specifically, the substrate W may be brought into the process chamber CH by a robot arm (not shown) or the like. When the substrate W enters the process chamber CH by the robot arm, the substrate lift pin 4 may rise in the first direction D1 by the substrate lift pin driver WPM. That is, the substrate lift pin 4 may come into contact with the lower surface of the substrate W as it rises, and the substrate W may also rise in the first direction D1. That is, the substrate W can be placed on the raised substrate lift pin 4, and the substrate W and the robot arm can be spaced apart. The robot arm can then be removed from the process chamber (CH).

The substrate lift pin 4 may descend in the first direction D1 by the substrate lift pin driver WPM. Because of this, the substrate W can be lowered in the first direction D1, and the substrate W can be placed on the electrostatic chuck 5. When the substrate W is placed on the electrostatic chuck 5, the chuck (53 in FIG. 2) of the electrostatic chuck 5 can fix the substrate W using the electrostatic force provided by the chuck electrode.

Loading the substrate (S10) may include aligning the side of the electrostatic chuck 5 with the side of the substrate W. Referring to FIGS. 11 to 14 , the diameter of the chuck 53 of the electrostatic chuck 5 may be substantially the same as the diameter of the substrate W. For this reason, when the substrate W is positioned on the chuck 53 of the electrostatic chuck 5, the side surface Ws of the substrate W and the side surface 53s of the chuck 53 may be aligned.

Referring to FIG. 18, performing a semiconductor process (S20) includes supplying process gas into the process chamber (CH), supplying first RF power to the plasma electrode (51 in FIG. 2), and external electrode (51 in FIG. 2). It may include supplying the second RF power to 7) of FIG. 2.

Supplying the process gas into the process chamber (CH) may include the gas supply unit (GS) supplying the process gas into the process chamber (CH). Specifically, the process gas may move onto the substrate W through the gas inlet GI, the distribution space DH, and the distribution holes GH of the shower head SH. Thereafter, the process gas may move down the process chamber (CH) through the slit (CRe) of the confinement ring (CR) and be discharged to the outside. From a plan view, the distribution holes GH of the shower head SH may be arranged two-dimensionally. Because of this, the process gas can be uniformly supplied to the substrate W.

Supplying the first RF power to the plasma electrode (51 in FIG. 2) may be performed by the first RF power supply unit ED1. The plasma electrode (51 in FIG. 2) to which the first RF power is applied may form an electric field in the space on the substrate W. Plasma PL may be formed in the space on the substrate W due to the electric field and process gas. For example, the semiconductor process may be a semiconductor process using plasma (PL), and specifically, it may be an etching process using plasma (PL). Accordingly, a portion of the upper surface of the substrate W may be etched by the plasma PL.

Supplying the second RF power to the outer electrode (7 in FIG. 2) may be performed by the second RF power supply unit ED2. The second RF power can be distinguished from the first RF power. For example, the frequency of the first RF power may be about 60MHz, and the frequency of the second RF power may be about 400kHz, but are not limited thereto. An electric field may be formed in the space on the outer electrode (7 in FIG. 2) by the second RF power applied to the outer electrode (7 in FIG. 2). As a result, the behavior of the plasma PL in the space on the outer electrode (7 in FIG. 2) can be controlled. Accordingly, dispersion between the center and edge areas of the substrate W can be improved.

Referring again to FIG. 16 , removing the substrate (S30) may include removing the electrostatic force that secures the substrate W and transferring the substrate W to the outside of the process chamber CH.

Specifically, the coupling force between the electrostatic chuck 5 and the substrate W can be removed by removing the electrostatic force. Thereafter, the substrate lift pin 4 may be raised in the first direction D1 by the substrate lift pin driver WPM to separate the substrate W from the electrostatic chuck 5 . The raised substrate (W) can be transported outside the process chamber (CH) by a robot arm. That is, removing the substrate (S30) may be performed in the opposite order to loading the substrate (S10).

19 and 20, replacing the focus ring (S40) includes lifting the focus ring (FR), transporting the focus ring (FR) to the outside of the process chamber (CH), and installing a new focus ring. It may include transferring (FR) into the inside of the process chamber (CH) and lowering the focus ring (FR).

Lifting the focus ring (FR) can be performed by the ring lift pin (2) and the ring lift pin driving unit (RPM). Specifically, the ring lift pin 2 may rise in the first direction D1 by the ring lift pin driving unit RPM. As described in FIG. 2, the ring lift pin 2 may contact the second lower surface BS2 of the focus ring FR. As a result, the ring lift pin (2) rises to lift the focus ring (FR), and the side of the electrostatic chuck (5), the upper surface of the coupling ring (6), and the side of the outer ring (9) are exposed to the outside. may be exposed.

Transporting the focus ring FR to the outside of the process chamber CH may be performed by a robot arm or the like. Specifically, when the robot arm enters the process chamber (CH), the ring lift pin 2 may descend in the first direction D1 by the ring lift pin driving unit (RPM). Because of this, the focus ring (FR) can be positioned on the robot arm. Afterwards, the robot arm may transfer the focus ring (FR) to the outside of the process chamber (CH).

Transporting the focus ring FR into the inside of the process chamber CH may be performed by a robot arm or the like. Specifically, a new focus ring (FR) can be placed on the robot arm outside the process chamber (CH). Afterwards, the robot arm can transfer the new focus ring (FR) into the inside of the process chamber (CH). The ring lift pin 2 may rise again in the first direction D1 by the ring lift pin driving unit RPM. Because of this, the new focus ring FR can rise in the first direction D1 while contacting the ring lift pin 2. That is, the new focus ring (FR) can be spaced apart from the robot arm. The robot arm can then be removed from the process chamber (CH).

That is, transferring the focus ring (FR) to the outside of the process chamber (CH) and transferring the focus ring (FR) to the inside of the process chamber (CH) involve removing the previously described substrate (S30) and the substrate. This may be a similar step to loading (S10).

20 to 22, lowering the focus ring FR means that at least a portion of the second inner surface IS2 of the focus ring FR is in contact with the electrostatic chuck 5 and the center of the electrostatic chuck 5. and the central axis (CA) of the focus ring (FR) may be aligned.

Specifically, the focus ring (FR) may be located on the ring lift pin (2). The ring lift pin 2 may descend in the first direction D1 by the ring lift pin driving unit RPM. Because of this, the focus ring FR may descend in the first direction D1. As the focus ring FR descends in the first direction D1, the first lower surface BS1 may be positioned at a lower level than the upper surface 53t of the chuck 53. In this case, the central axis CA of the focus ring FR may be not aligned with the center of the electrostatic chuck 5. That is, from a plan view, the distance between the inner surface IS of the focus ring FR and the side surface 5s of the electrostatic chuck 5 may not be constant in all directions. As a result, as the focus ring FR descends in the first direction D1, at least a portion of the inner surface IS may come into contact with the electrostatic chuck 5. More specifically, when the focus ring FR descends in the first direction D1, at least a portion of the second inner surface IS2 of the focus ring FR may contact the electrostatic chuck 5.

The second inner surface IS2 may not be parallel to the first direction D1. The second inner surface IS2 may form a constant angle θ with the first direction D1. The angle θ formed by the second inner surface IS2 and the first direction D1 may be an acute angle. That is, the second inner surface IS2 may be a surface inclined with respect to the first direction D1. For this reason, when the second inner surface (IS2) of the focus ring (FR) descends while contacting the electrostatic chuck (5), the focus ring (FR) moves in the second direction (D2) or the opposite of the second direction (D2). You can move in any direction. That is, the focus ring FR may move in the second direction D2 or in a direction opposite to the second direction D2 until the second inner surface IS2 is lower than the upper surface 53t of the chuck 53. Accordingly, the central axis CA of the focus ring FR and the center of the electrostatic chuck 5 may be aligned while the focus ring FR moves in the second direction D2 or in a direction opposite to the second direction D2. there is.

Thereafter, the focus ring FR may descend until the first upper surface TS1 of the focus ring FR is located at a lower level than the upper surface 53t of the chuck 53. That is, when replacing the focus ring (S40) is completed, the first upper surface TS1 of the focus ring FR may be located at a lower level than the upper surface 53t of the chuck 53.

According to one embodiment, the focus ring FR may be composed of a plurality of members. For example, the focus ring FR may include a first ring and a second ring. In this case, replacing the focus ring (S40) may include replacing the entire focus ring (FR) or replacing a part of the focus ring (FR).

According to one embodiment, replacing the focus ring (S40) may be performed after loading the substrate (S10), performing the semiconductor process (S20), and removing the substrate (S30) are repeated several times. You can. That is, after performing a semiconductor process on a plurality of substrates W, the focus ring FR can be replaced.

According to the focus ring FR of the present invention, the central axis CA of the focus ring FR and the center of the electrostatic chuck 5 can be automatically aligned while lowering the focus ring FR. That is, auxiliary tools may not be needed in the process of installing the focus ring FR in the substrate processing apparatus 1. The focus ring FR and the electrostatic chuck 5 can always be aligned at regular intervals in all directions. Therefore, the focus ring (FR) can be replaced using only the ring lift pin (2), the ring lift pin driving unit (RPM), and the robot arm. That is, since only the focus ring (FR) can be replaced while maintaining the atmosphere inside the process chamber (CH), the backup time of the substrate processing apparatus 1 can be shortened and yield can be improved.

Additionally, since the focus ring FR and the electrostatic chuck 5 are automatically aligned, the substrate W can be automatically aligned on the electrostatic chuck 5. That is, even if the chuck 53 has substantially the same diameter as the substrate W, the upper surface 53t of the chuck 53 may be completely covered by the substrate W. Accordingly, substantially the same effects as those described in FIGS. 13 and 14 can be obtained, and distribution within the substrate W can be improved.

Above, embodiments of the present invention have been described with reference to the attached drawings, but those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will understand that it exists. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

Claims (20)

A focus ring having a central axis extending in a first direction,
The upper surface of the focus ring has a first inner diameter, and the lower surface of the focus ring has a second inner diameter,
The first inner diameter is smaller than the second inner diameter,
The inner surface of the focus ring is located between the upper surface and the lower surface and includes a first inner surface and a second inner surface,
The second inner surface extends downward from the first inner surface,
The focus ring wherein the angle formed by the first inner surface with the first direction is different from the angle formed by the second inner surface with the first direction.
According to claim 1,
The first inner surface is parallel to the first direction,
A focus ring wherein the second inner surface forms an acute angle with the first direction.
According to clause 2,
A focus ring where the acute angle is greater than 0° and less than or equal to 5°.
According to claim 1,
A focus ring wherein the first inner surface is convex toward the central axis.
According to claim 1,
The inner surface of the focus ring further includes a third inner surface,
The third inner surface is a focus ring located between the first inner surface and the second inner surface.
According to claim 1,
A focus ring wherein a difference between the first inner diameter and the second inner diameter is 0.01 mm to 0.5 mm.
According to claim 1,
The outer surface of the focus ring includes a first outer surface and a second outer surface extending from the first outer surface,
The first outer surface is parallel to the first direction,
A focus ring wherein the second outer surface forms an acute angle with the first direction.
an electrostatic chuck having a chuck to support the substrate; and
A focus ring having a central axis extending in a first direction and located on a side of the chuck,
The upper surface of the focus ring has a first inner diameter, and the lower surface of the focus ring has a second inner diameter,
The first inner diameter is smaller than the second inner diameter,
A substrate processing device wherein the chuck has a diameter of 298.6mm to 300mm.
According to clause 8,
A substrate processing device wherein the upper surface of the focus ring is located at a lower level than the upper surface of the chuck.
According to clause 8,
The focus ring includes a first inner surface between the upper surface and the lower surface and a second inner surface extending from the first inner surface,
The substrate processing apparatus wherein the angle formed by the first inner surface and the first direction is different from the angle formed by the second inner surface and the first direction.
According to claim 10,
The focus ring further includes a third inner surface between the first inner surface and the second inner surface,
At least one of the first to third inner surfaces is convex toward the central axis.
electrostatic chuck;
a focus ring located on the electrostatic chuck and having a central axis extending in a first direction; and
an outer ring surrounding the focus ring; Including,
The inner surface of the focus ring includes a first inner surface and a second inner surface,
The second inner surface is in contact with the first inner surface,
The first inner surface is closer to the electrostatic chuck than the second inner surface.
According to claim 12,
The substrate processing apparatus wherein the angle formed by the first inner surface with the first direction is different from the angle formed by the second inner surface with the first direction.
According to claim 12,
The upper surface of the focus ring has a first inner diameter,
The lower surface of the focus ring has a second inner diameter,
A substrate processing device wherein the first inner diameter is smaller than the second inner diameter.
According to claim 12,
The first inner surface is parallel to the first direction,
The second inner surface is at an acute angle with the first direction.
According to claim 12,
The inner surface of the focus ring further includes a third inner surface,
At least one of the first to third inner surfaces is convex toward the electrostatic chuck.
According to claim 12,
Further comprising a ring lift pin spaced apart from the electrostatic chuck and extending in the first direction,
The ring lift pin is a substrate processing device located below the focus ring.
According to claim 12,
a power supply unit connected to the electrostatic chuck;
a shower head on the electrostatic chuck; and
A substrate processing apparatus further comprising a confinement ring between the electrostatic chuck and the shower head.
loading the substrate onto an electrostatic chuck;
performing semiconductor processes;
removing the substrate from the electrostatic chuck; and
Including replacing the focus ring,
The focus ring:
It has a central axis extending in a first direction,
The inner surface of the focus ring includes a first inner surface and a second inner surface extending from the first inner surface,
Replacing the focus ring includes at least a portion of the second inner surface of the focus ring being in contact with the electrostatic chuck and aligning the center of the electrostatic chuck with the central axis of the focus ring. .
According to clause 19,
A method of manufacturing a semiconductor device wherein loading the substrate onto the electrostatic chuck includes aligning a side surface of the substrate and a side surface of the electrostatic chuck.

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