KR20240007806A - Adhesive film for semiconductor - Google Patents

Abstract

The present invention provides a semiconductor adhesive film that has excellent adhesive strength and can effectively control fillets generated in the semiconductor packaging process.

Description

Semiconductor adhesive film{ADHESIVE FILM FOR SEMICONDUCTOR}

The present invention relates to a semiconductor adhesive film.

In general, the semiconductor chip manufacturing process includes a process of forming a fine pattern on a wafer and a process of packaging the wafer by polishing it to meet the specifications of the final device.

The above-described packaging process includes a wafer inspection process for inspecting defects in semiconductor chips; A dicing process that cuts the wafer and separates it into individual chips; A die bonding process of attaching the separated chip to a circuit film or a mounting plate of a lead frame; A wire bonding process of connecting a chip pad provided on a semiconductor chip and a circuit pattern of a circuit film or lead frame with an electrical connection means such as a wire; A molding process that covers the outside of a semiconductor chip with an encapsulating material to protect its internal circuitry and other components; Trim process to cut the dam bar connecting the leads; A forming process that bends the lead into a desired shape; and a finished product inspection process that inspects the finished package for defects.

Recently, as the trend toward miniaturization, high functionality, and large capacity of electronic devices has expanded and the need for high density and high integration of semiconductor packages has increased rapidly, the size of semiconductor chips has been increasing, and in order to improve integration, stack packages are used to stack chips in multiple stages. Methods are gradually increasing.

Recently, semiconductors using through-silicon electrodes (TSV) have been developed, and through-silicon electrodes have the advantages of high density, low power use, high speed, and minimal package thickness. Bonding between chips using through-silicon electrodes is accomplished by thermal compression bonding, which applies pressure for 1 to 10 seconds at a temperature of 200 to 300°C.

Non-conductive paste (NCP) or non-conductive film (NCF) in the form of paste is used as an adhesive to fill between each TSV layer. Among these, NCF is a film-type underfill material that has advantages in embedding, process time, and ease of use. However, in the case of NCF, fillets inevitably occur during the pressing process. If the fillet is discharged excessively, problems such as the fillet touching other nearby chips or flowing downward or upward in a structure where multiple chips are stacked may occur.

In order to solve the above problems, there is a need to develop a semiconductor adhesive film that can effectively control fillets.

The present invention provides a semiconductor adhesive film that has excellent adhesive strength and maintains embedding properties while effectively controlling fillets generated in the semiconductor packaging process.

However, the problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

One embodiment of the present invention includes: a first adhesive layer including a first adhesive composition including a first thermosetting resin, a first thermoplastic resin, and a first curing agent; And a second adhesive composition provided on the first adhesive layer and comprising a second thermosetting resin, a second thermoplastic resin, a second curing agent, and a reactive (meth)acrylate-based compound containing two or more (meth)acrylate groups. It provides a semiconductor adhesive film including a second adhesive layer.

The semiconductor adhesive film according to an embodiment of the present invention exhibits excellent adhesive strength, facilitates control of fillets generated during the semiconductor packaging process, prevents the problem of solder melting and fusion to the chip, and provides embedding properties. can be maintained.

The effect of the present invention is not limited to the above-mentioned effect, and effects not mentioned will be clearly understood by those skilled in the art from the present specification and the attached drawings.

1 is a diagram schematically showing a semiconductor adhesive film according to an exemplary embodiment of the present invention.
Figure 2 is a diagram schematically showing a method of manufacturing a semiconductor package using a semiconductor adhesive film according to an embodiment of the present invention.

Throughout the specification of the present application, when a part is said to “include” a certain element, this means that it may further include other elements rather than excluding other elements, unless specifically stated to the contrary.

Throughout this specification, when a member is said to be located “on” another member, this includes not only the case where the member is in contact with the other member, but also the case where another member exists between the two members.

Throughout the specification herein, the unit “part by weight” may refer to the ratio of weight between each component.

Throughout this specification, “(meth)acrylate” is used to collectively refer to acrylates and methacrylates.

Throughout this specification, terms including ordinal numbers, such as “first” and “second,” are used for the purpose of distinguishing one element from another element and are not limited by the ordinal numbers. For example, within the scope of invention rights, a first component may also be referred to as a second component, and similarly, the second component may be referred to as a first component.

Throughout the specification of this application, “solids” is used to refer to the sum of all components excluding the solvent in the composition.

Throughout the specification herein, the viscosity of the compound (or composition) may be a value measured with a Haake viscometer while raising the temperature after sampling in a film state. Specifically, the compound (or composition) is defoamed without bubbles and laminated to a thickness of 500 ㎛ or more, and then the viscosity is measured while increasing the temperature by 5°C/min.

Hereinafter, this specification will be described in more detail.

One embodiment of the present invention includes: a first adhesive layer including a first adhesive composition including a first thermosetting resin, a first thermoplastic resin, and a first curing agent; And a second adhesive composition provided on the first adhesive layer and comprising a second thermosetting resin, a second thermoplastic resin, a second curing agent, and a reactive (meth)acrylate-based compound containing two or more (meth)acrylate groups. It provides a semiconductor adhesive film including a second adhesive layer.

The semiconductor adhesive film according to an embodiment of the present invention exhibits excellent adhesion, allows easy control of fillets generated during the semiconductor packaging process, and prevents the problem of solder melting and being fused to the chip. . Specifically, the semiconductor adhesive film includes a first adhesive layer and a second adhesive layer whose viscosity increases after primary curing, so that excellent adhesive strength can be achieved and the amount of fillets generated during the semiconductor packaging process can be appropriately controlled, It can effectively prevent the problem of melted solder flowing at high temperatures and fusing to the chip.

According to an exemplary embodiment of the present invention, the first adhesive layer may include the first adhesive composition. Specifically, the first adhesive layer may include a dried product (or thermoset product) of the first adhesive composition. The first adhesive composition may include a first thermosetting resin, a first thermoplastic resin, and a first curing agent.

According to one embodiment of the present invention, the first thermosetting resin may include at least one of a solid epoxy resin and a liquid epoxy resin. The first thermosetting resin may react with the first curing agent to develop heat resistance properties or mechanical strength.

According to one embodiment of the present invention, the epoxy resin is a cresol novolak epoxy resin, bisphenol F-type epoxy resin, bisphenol F-type novolac epoxy resin, bisphenol A-type epoxy resin, bisphenol A-type novolak epoxy resin, and phenol novolak. Epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, biphenyl type novolac epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin. , dicyclopentadiene-modified phenol-type epoxy resin, glycidylamine-type epoxy resin, and cycloaliphatic epoxy resin. When the first thermosetting resin includes the above-described epoxy resin, the first adhesive composition is a semiconductor adhesive film that secures mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a package of a multi-layered structure of a semiconductor chip. It can be implemented.

According to one embodiment of the present invention, the epoxy resin may have an average epoxy equivalent weight of 100 g/eq to 1,000 g/eq. The average epoxy equivalent can be obtained based on the weight ratio and epoxy equivalent of each epoxy resin included in the epoxy resin.

According to one embodiment of the present invention, the content of the first thermosetting resin may be 20 parts by weight or more and 40 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. At this time, the solid content of the first adhesive composition refers to all components except the solvent, and may specifically include a first thermosetting resin, a first thermoplastic resin, and a first curing agent. Additionally, when the first adhesive composition includes additives described later, the solid content may include additives in addition to the components described above. When the content of the first thermosetting resin is within the above-mentioned range, the first adhesive composition is a semiconductor adhesive film that secures mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a package of a multi-layered structure of a semiconductor chip. can be implemented.

According to an exemplary embodiment of the present invention, the first thermoplastic resin is a polyimide-based resin, polyether imide-based resin, polyester imide-based resin, polyamide-based resin, polyether sulfone-based resin, polyether ketone-based resin, and polyolefin. It may include at least one of based resin, polyvinyl chloride-based resin, phenoxy-based resin, butadiene rubber, styrene-butadiene rubber, modified butadiene rubber, reactive butadiene acrylonitrile copolymer rubber, and (meth)acrylate-based resin. By selecting the thermoplastic resin from the above, compatibility with the epoxy resin can be increased and stress occurring in the semiconductor package can be reduced.

According to one embodiment of the present invention, the first thermoplastic resin is a (meth)acrylate-based resin having a glass transition temperature of -10 ℃ to 30 ℃ and a weight average molecular weight of 50,000 g/mol to 1,000,000 g/mol. It can be included.

According to one embodiment of the present invention, the (meth)acrylate-based resin is an epoxy group-containing acrylic copolymer, and contains 1% to 30% by weight of glycidyl acrylate or glycidyl methacrylate based on the total weight, or It may contain 2% to 28% by weight, or 2.5% to 25% by weight. When the epoxy group content in the (meth)acrylate-based resin is within the above-mentioned range, compatibility and adhesion with the epoxy resin may be excellent. In addition, the rate of increase in viscosity due to curing is appropriate, so that bonding and embedding of solder bumps can be sufficiently achieved in the thermocompression process of semiconductor devices.

According to one embodiment of the present invention, the content of the first thermoplastic resin may be 5 parts by weight or more and 20 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. By adjusting the content of the first thermoplastic resin to the above-described range, compatibility with the first thermosetting resin can be increased and stress that may occur in the semiconductor package can be effectively reduced.

Additionally, the first thermoplastic resin may include two types of (meth)acrylate-based resin. That is, the first thermoplastic resin may include a first (meth)acrylate-based resin and a second (meth)acrylate-based resin. The first (meth)acrylate-based resin and the second (meth)acrylate-based resin may have different weight average molecular weights. For example, the weight average molecular weight of the first (meth)acrylate-based resin is 50,000 g/mol to 500,000 g/mol, and the weight average molecular weight of the second (meth)acrylate-based resin is 550,000 g/mol to 1,000,000 g. It can be /mol. The weight ratio of the first (meth)acrylate-based resin and the second (meth)acrylate-based resin included in the first thermoplastic resin may be 0.1:10 to 10:0.1. When the weight ratio of the first (meth)acrylate-based resin and the second (meth)acrylate-based resin is within the above-mentioned range, compatibility with the first thermosetting resin is increased and stress that may occur in the semiconductor package is reduced. can be effectively reduced.

According to one embodiment of the present invention, the first curing agent may be a first thermal curing agent. The first heat curing agent may include at least one of an amine-based compound, an acid anhydride-based compound, an amide-based compound, and a phenol-based compound. Specifically, the amine-based compound may be one selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetriamine, diaminodiphenylsulfone, isophoronediamine, or a combination thereof. The acid anhydride-based compound is phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, or these. It may be one selected from the group consisting of a combination of. The amide-based compound may be a polyamide resin synthesized from dicyandiamide, a dimer of linolenic acid, and ethylenediamine. The phenolic compounds include polyhydric phenols such as bisphenol A, bisphenol F, bisphenol S, fluorenebisphenol, and terpenediphenol; Phenol resins obtained by condensation of phenols with aldehydes, ketones, or dienes; Modified products of phenols and/or phenolic resins; Halogenated phenols such as tetrabromobisphenol A and brominated phenol resin; Other imidazoles, BF3-amine complexes, and guanidine derivatives may be used. Additionally, the phenol-based compound may include at least one of bisphenol A novolak resin and cresol novolak resin. By selecting the curing agent from the above, it is possible to control the degree of curing of the epoxy resin and at the same time improve the mechanical properties of the first adhesive layer.

According to one embodiment of the present invention, the first curing agent may include a phenolic resin having a softening point of 60°C or higher. Specifically, the softening point of the phenolic resin may be 60°C or higher and 150°C or lower, 65°C or higher and 145°C or lower, or 70°C or higher and 140°C or lower. By including a phenol-based resin having a softening point within the above-mentioned range, heat resistance, strength, and adhesiveness can be improved after curing of the first adhesive composition, and voids are created inside the adhesive layer in the semiconductor manufacturing process. It can be prevented.

According to one embodiment of the present invention, the first curing agent may include a novolak-based phenol resin. The novolak-based phenol resin has a chemical structure in which a ring is located between reactive functional groups. Due to these structural characteristics, the novolak-based phenol resin can lower the hygroscopicity of the adhesive layer and increase stability in a high-temperature pressing process, so it can play a role in preventing peeling of the first adhesive layer. .

According to one embodiment of the present invention, the content of the first curing agent may be 7.5 parts by weight or more and 17.5 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. By adjusting the content of the first curing agent to the above-mentioned range, heat resistance, strength, and adhesiveness can be improved after curing of the first adhesive composition.

According to one embodiment of the present invention, the first adhesive composition may further include an additive including at least one of a first inorganic filler, a first curing catalyst, and a first flux agent.

According to one embodiment of the present invention, the first inorganic filler is alumina, silica, barium sulfate, magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, aluminum hydroxide, aluminum nitride, and boric acid. It may contain at least one of aluminum.

According to one embodiment of the present invention, the first inorganic filler may be an ion adsorbent that can improve reliability by adsorbing ionic impurities. Specifically, the ion adsorbent includes magnesium-based materials such as magnesium hydroxide, magnesium carbonate, magnesium silicate, and magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, alumina, aluminum hydroxide, aluminum nitride, aluminum borate whisker, zirconium-based minerals, and antimony bismuth. One or more types of inorganic particles selected from the group consisting of system inorganics may be applied.

According to one embodiment of the present invention, the particle diameter (based on the longest outer diameter) of the first inorganic filler may be 0.01 to 10 ㎛, or 0.02 to 5.0 ㎛, or 0.03 to 2.0 ㎛. By adjusting the particle size of the first inorganic filler within the above-mentioned range, excessive aggregation of the first adhesive composition can be prevented, damage to the semiconductor circuit caused by the inorganic filler, and deterioration of the adhesiveness of the semiconductor adhesive film can be prevented. .

According to one embodiment of the present invention, the content of the first inorganic filler may be 30 parts by weight or more and 60 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. By adjusting the content of the first inorganic filler within the above-described range, excessive aggregation of the first adhesive composition can be prevented, damage to the semiconductor circuit caused by the inorganic filler, and deterioration of the adhesiveness of the semiconductor adhesive film can be prevented.

According to one embodiment of the present invention, the first curing catalyst may include one selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, imidazole-based compounds, and combinations thereof. By selecting the first curing catalyst from the above, curing of the first adhesive composition can be promoted.

According to one embodiment of the present invention, the content of the first curing catalyst may be 1 part by weight or more and 3 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. By adjusting the content of the first curing catalyst within the above-mentioned range, curing of the first adhesive composition can be promoted.

According to one embodiment of the present invention, the functional group of the first flux agent may be a polar functional group. By selecting the functional group of the first flux agent as a polar functional group, the fillet can be effectively controlled and it can contribute to improving the quality of the semiconductor adhesive film being manufactured.

According to one embodiment of the present invention, the polar functional group may be a carboxyl group. As described above, by selecting the polar functional group as a carboxy group, the fillet can be effectively controlled and can contribute to improving the quality of the semiconductor adhesive film being manufactured.

According to one embodiment of the present invention, the content of the first flux agent may be 1 part by weight or more and 5 parts by weight or less, based on 100 parts by weight of solid content of the first adhesive composition. By adjusting the content of the first flux agent within the above-mentioned range, the fillet can be effectively controlled and can contribute to improving the quality of the semiconductor adhesive film being manufactured.

According to an exemplary embodiment of the present invention, the first adhesive composition may further include a leveling agent, a dispersant, or a solvent, if necessary.

According to one embodiment of the present invention, the solvent may be used for the purpose of dissolving the first adhesive composition and providing an appropriate viscosity for applying the composition. Specific examples of the solvent include ketones such as methyl ethyl ketone and cyclohexanone; Aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; Ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, Diethylene glycol monoethyl ether, Diethylene glycol monomethyl ether, Diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether , glycol ethers such as dipropylene glycol diethyl ether and triethylene glycol monoethyl ether (Cellosolve); Acetic acid esters such as ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, and dipropylene glycol monomethyl ether acetate; Alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, and carbitol; Aliphatic hydrocarbons such as octane and decane; Petroleum-based solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha; Amides such as dimethylacetamide and dimethylformamide (DMF) can be mentioned. These solvents can be used individually or as a mixture of two or more types.

The solvent may be used in an appropriate amount considering the dispersibility, solubility, or viscosity of the first adhesive composition. For example, the first adhesive composition may contain 0.1% to 70% by weight of the solvent, or 1% to 1% by weight. It may contain 65% by weight. When the content of the solvent is within the above-mentioned range, the coatability of the first adhesive composition can be improved, and the first adhesive composition can be dried smoothly to reduce the stickiness of the produced film.

Meanwhile, examples of methods for producing the first adhesive composition are not greatly limited, and various methods may be used, such as mixing the above-described components using a mixer or the like.

According to an exemplary embodiment of the present invention, the thickness of the first adhesive layer may be 2 ㎛ or more and 100 ㎛ or less. Specifically, the thickness of the semiconductor adhesive film is 2 ㎛ or more and 75 ㎛ or less, 10 ㎛ or more and 50 ㎛ or less, 25 ㎛ or more and 100 ㎛ or less, 50 ㎛ or more and 100 ㎛ or less, 15 ㎛ or more and 70 ㎛ or less, or 20 ㎛ or more. It may be 50 ㎛ or less.

According to an exemplary embodiment of the present invention, the second adhesive layer may include the second adhesive composition. Specifically, the second adhesive layer may include a dried product (or thermoset product) of the second adhesive composition. The second adhesive composition may include a second thermosetting resin, a second thermoplastic resin, a second curing agent, and a reactive (meth)acrylate-based compound. The second adhesive layer may include a reactive (meth)acrylate-based compound containing two or more (meth)acrylate groups, thereby enabling primary and secondary curing. Specifically, the second adhesive layer is primary cured to effectively control fillets that occur when components of the second adhesive layer are pushed out during bonding of the lower semiconductor chip and the upper semiconductor chip during the semiconductor package manufacturing process, and the secondary adhesive layer is cured. By hardening, the lower semiconductor chip and the upper semiconductor chip can be finally bonded in a stable manner.

According to one embodiment of the present invention, the second thermosetting resin may include at least one of a solid epoxy resin and a liquid epoxy resin. The second thermosetting resin may react with the second curing agent to develop heat resistance properties or mechanical strength. The second thermosetting resin may be the same as or different from the first thermosetting resin described above.

According to one embodiment of the present invention, the epoxy resin is a cresol novolak epoxy resin, bisphenol F-type epoxy resin, bisphenol F-type novolac epoxy resin, bisphenol A-type epoxy resin, bisphenol A-type novolak epoxy resin, and phenol novolak. Epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, biphenyl type novolac epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin. , dicyclopentadiene-modified phenol-type epoxy resin, glycidylamine-type epoxy resin, and cycloaliphatic epoxy resin. When the second thermosetting resin includes the above-described epoxy resin, the second adhesive composition is a semiconductor adhesive film that secures mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a multi-layered package of a semiconductor chip. It can be implemented.

According to one embodiment of the present invention, the epoxy resin may have an average epoxy equivalent weight of 100 g/eq to 1,000 g/eq. The average epoxy equivalent can be obtained based on the weight ratio and epoxy equivalent of each epoxy resin included in the epoxy resin.

According to one embodiment of the present invention, the content of the second thermosetting resin may be 5 parts by weight or more and 50 parts by weight or less, or 10 parts by weight or more and 40 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. At this time, the solid content of the second adhesive composition refers to all components except the solvent, and may specifically include a second thermosetting resin, a second thermoplastic resin, a second curing agent, and a reactive (meth)acrylate-based compound. Additionally, when the second adhesive composition includes additives described later, the solid content may include additives in addition to the components described above. When the content of the second thermosetting resin is within the above-mentioned range, the second adhesive composition is a semiconductor adhesive film that secures mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a multi-layered package of a semiconductor chip. can be implemented.

According to an exemplary embodiment of the present invention, the second thermoplastic resin is polyimide-based resin, polyether imide-based resin, polyester imide-based resin, polyamide-based resin, polyether sulfone-based resin, polyether ketone-based resin, and polyolefin. It may include at least one of based resin, polyvinyl chloride-based resin, phenoxy-based resin, butadiene rubber, styrene-butadiene rubber, modified butadiene rubber, reactive butadiene acrylonitrile copolymer rubber, and (meth)acrylate-based resin. By selecting the second thermoplastic resin from the above, compatibility with the epoxy resin can be increased and stress occurring in the semiconductor package can be reduced. The second thermoplastic resin may be the same as or different from the above-described first thermoplastic resin.

According to one embodiment of the present invention, the second thermoplastic resin is a (meth)acrylate-based resin having a glass transition temperature of -10 ℃ to 30 ℃ and a weight average molecular weight of 50,000 g/mol to 1,000,000 g/mol. It can be included.

According to one embodiment of the present invention, the (meth)acrylate-based resin is an epoxy group-containing acrylic copolymer, and contains 1% to 30% by weight of glycidyl acrylate or glycidyl methacrylate based on the total weight, or It may contain 2% to 28% by weight, or 2.5% to 25% by weight. When the epoxy group content in the (meth)acrylate-based resin is within the above-mentioned range, compatibility and adhesion with the epoxy resin may be excellent. In addition, the rate of increase in viscosity due to curing is appropriate, so that bonding and embedding of solder bumps can be sufficiently achieved in the thermocompression process of semiconductor devices.

According to one embodiment of the present invention, the content of the second thermoplastic resin may be 5 parts by weight or more and 20 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. By adjusting the content of the second thermoplastic resin to the above-described range, compatibility with the second thermosetting resin can be increased and stress that may occur in the semiconductor package can be effectively reduced.

Additionally, the second thermoplastic resin may include two types of (meth)acrylate-based resin. That is, the second thermoplastic resin may include a first (meth)acrylate-based resin and a second (meth)acrylate-based resin. The first (meth)acrylate-based resin and the second (meth)acrylate-based resin may have different weight average molecular weights. For example, the weight average molecular weight of the first (meth)acrylate-based resin is 50,000 g/mol to 500,000 g/mol, and the weight average molecular weight of the second (meth)acrylate-based resin is 550,000 g/mol to 1,000,000 g. It can be /mol. The weight ratio of the first (meth)acrylate-based resin and the second (meth)acrylate-based resin included in the second thermoplastic resin may be 0.1:10 to 10:0.1. When the weight ratio of the first (meth)acrylate-based resin and the second (meth)acrylate-based resin is within the above-mentioned range, compatibility with the second thermosetting resin is increased and stress that may occur in the semiconductor package is reduced. can be effectively reduced.

According to one embodiment of the present invention, the second curing agent may be a thermal curing agent. The second heat curing agent may include at least one of an amine-based compound, an acid anhydride-based compound, an amide-based compound, and a phenol-based compound. Specifically, the amine-based compound may be one selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetriamine, diaminodiphenylsulfone, isophoronediamine, or a combination thereof. The acid anhydride-based compound is phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, or these. It may be one selected from the group consisting of a combination of. The amide-based compound may be a polyamide resin synthesized from dicyandiamide, a dimer of linolenic acid, and ethylenediamine. The phenolic compounds include polyhydric phenols such as bisphenol A, bisphenol F, bisphenol S, fluorenebisphenol, and terpenediphenol; Phenol resins obtained by condensation of phenols with aldehydes, ketones, or dienes; Modified products of phenols and/or phenolic resins; Halogenated phenols such as tetrabromobisphenol A and brominated phenol resin; Other imidazoles, BF3-amine complexes, and guanidine derivatives may be used. Additionally, the phenol-based compound may include at least one of bisphenol A novolak resin and cresol novolak resin. By selecting the curing agent from the above, it is possible to control the degree of curing of the epoxy resin and at the same time improve the mechanical properties of the second adhesive layer. The second curing agent may be the same as or different from the first curing agent described above.

According to one embodiment of the present invention, the second curing agent may include a phenolic resin having a softening point of 60°C or higher. Specifically, the softening point of the phenolic resin may be 60°C or higher and 150°C or lower, 65°C or higher and 145°C or lower, or 70°C or higher and 140°C or lower. By including a phenol-based resin having a softening point within the above-mentioned range, heat resistance, strength, and adhesiveness can be improved after curing of the second adhesive composition, and voids are created inside the adhesive layer in the semiconductor manufacturing process. It can be prevented.

According to one embodiment of the present invention, the second curing agent may include a novolak-based phenol resin. The novolak-based phenol resin has a chemical structure in which a ring is located between reactive functional groups. Due to these structural characteristics, the novolak-based phenolic resin can lower the hygroscopicity of the adhesive layer and increase stability in a high-temperature pressing process, thereby preventing peeling of the adhesive layer.

According to one embodiment of the present invention, the content of the second curing agent may be 3 parts by weight or more and 20 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. By adjusting the content of the second curing agent to the above-mentioned range, heat resistance, strength, and adhesiveness can be improved after curing of the second adhesive composition.

According to one embodiment of the present invention, the reactive (meth)acrylate-based compound may contain two or more (meth)acrylate groups. Specifically, the reactive (meth)acrylate-based compound may be one in which two or more (meth)acrylate groups are bonded to the main chain. For example, the reactive (meth)acrylate-based compound may contain 2 or more and 8 or less (meth)acrylate groups. Specifically, the number of (meth)acrylate groups contained in the reactive (meth)acrylate-based compound may be 2 or more and 7 or less, 2 or more and 6 or less, 2 or more and 5 or less, 2 or more and 4 or less, or 2 and 3 or less. there is. When the number of (meth)acrylate groups contained in the reactive (meth)acrylate-based compound is within the above-mentioned range, the viscosity of the second adhesive layer is improved during primary curing, and the lower semiconductor chip and the lower semiconductor chip during the semiconductor package manufacturing process are It is possible to effectively control fillets that occur when components of the second adhesive layer are pushed out during bonding of the upper semiconductor chip. In addition, the second adhesive layer is effectively secondaryly cured to enable stable final bonding of the lower semiconductor chip and the upper semiconductor chip.

According to one embodiment of the present invention, the reactive (meth)acrylate-based compound is ethylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, hexamethylene di(meth)acrylate, and trimethylol. Propane tri(meth)acrylate, polyether tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate and dipenta. It may contain at least one of erythritol hexa(meth)acrylate.

According to one embodiment of the present invention, the content of the reactive (meth)acrylate-based compound may be 0.1 part by weight or more and 4 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. When the content of the reactive (meth)acrylate-based compound is within the above-mentioned range, the viscosity of the second adhesive layer is improved during primary curing, allowing bonding of the lower semiconductor chip and the upper semiconductor chip during the semiconductor package manufacturing process. It is possible to effectively control fillets that occur when components of the second adhesive layer are pushed out. In addition, the second adhesive layer is effectively secondaryly cured to enable stable final bonding of the lower semiconductor chip and the upper semiconductor chip.

According to one embodiment of the present invention, the weight ratio of the second curing agent and the reactive (meth)acrylate-based compound may be 1:0.01 or more and 1:1.5 or less. By adjusting the weight ratio of the second curing agent and the reactive (meth)acrylate-based compound to the above-mentioned range, the viscosity of the second adhesive layer can be effectively improved during primary curing, and secondary curing by heat can be stably achieved. It may be possible. Through this, the semiconductor adhesive film can effectively reduce fillets that may occur when joining the lower semiconductor chip and the upper semiconductor chip during the semiconductor package manufacturing process, and can stably final bond the lower semiconductor chip and the upper semiconductor chip. there is.

According to one embodiment of the present invention, the second adhesive composition may further include an additive including at least one of a second inorganic filler, a second curing catalyst, and a second flux agent.

According to one embodiment of the present invention, the second inorganic filler is alumina, silica, barium sulfate, magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, aluminum hydroxide, aluminum nitride, and boric acid. It may contain at least one of aluminum. The second inorganic filler may be the same as or different from the first inorganic filler described above.

According to one embodiment of the present invention, the second inorganic filler may be an ion adsorbent that can improve reliability by adsorbing ionic impurities. Specifically, the ion adsorbent includes magnesium-based materials such as magnesium hydroxide, magnesium carbonate, magnesium silicate, and magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, alumina, aluminum hydroxide, aluminum nitride, aluminum borate whisker, zirconium-based minerals, and antimony bismuth. One or more types of inorganic particles selected from the group consisting of system inorganics may be applied.

According to one embodiment of the present invention, the particle diameter (based on the longest outer diameter) of the second inorganic filler may be 0.01 to 10 ㎛, 0.02 to 5.0 ㎛, or 0.03 to 2.0 ㎛. By adjusting the particle size of the second inorganic filler within the above-mentioned range, excessive agglomeration of the second adhesive composition can be prevented, damage to the semiconductor circuit caused by the inorganic filler, and deterioration of the adhesiveness of the semiconductor adhesive film can be prevented. .

According to one embodiment of the present invention, the content of the second inorganic filler may be 30 parts by weight or more and 60 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. By adjusting the content of the second inorganic filler within the above-described range, excessive aggregation of the second adhesive composition can be prevented, damage to the semiconductor circuit caused by the inorganic filler, and deterioration of the adhesiveness of the semiconductor adhesive film can be prevented.

According to one embodiment of the present invention, the second curing catalyst may include one selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, imidazole-based compounds, and combinations thereof. By selecting a curing catalyst from the above, curing of the second adhesive composition can be promoted. The second curing catalyst may be the same as or different from the first curing catalyst described above.

According to one embodiment of the present invention, the content of the second curing catalyst may be 1 part by weight or more and 3 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. By adjusting the content of the second curing catalyst within the above-mentioned range, curing of the second adhesive composition can be promoted.

According to one embodiment of the present invention, the functional group of the second flux agent may be a polar functional group. By selecting the functional group of the second flux agent as a polar functional group, the fillet can be effectively controlled and it can contribute to improving the quality of the semiconductor adhesive film being manufactured. The second flux agent may be the same as or different from the first flux agent described above.

According to one embodiment of the present invention, the polar functional group may be a carboxyl group. As described above, by selecting the polar functional group as a carboxy group, the fillet can be effectively controlled and can contribute to improving the quality of the semiconductor adhesive film being manufactured.

According to one embodiment of the present invention, the content of the second flux agent may be 1 part by weight or more and 5 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition. By adjusting the content of the second flux agent within the above-mentioned range, the fillet can be effectively controlled and can contribute to improving the quality of the semiconductor adhesive film being manufactured.

According to one embodiment of the present invention, the second adhesive composition may further include a leveling agent, a dispersant, or a solvent, if necessary.

According to one embodiment of the present invention, the solvent may be used for the purpose of dissolving the second adhesive composition and providing an appropriate viscosity for applying the composition. Specific examples of the solvent include ketones such as methyl ethyl ketone and cyclohexanone; Aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; Ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, Diethylene glycol monoethyl ether, Diethylene glycol monomethyl ether, Diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether , glycol ethers such as dipropylene glycol diethyl ether and triethylene glycol monoethyl ether (Cellosolve); Acetic acid esters such as ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, and dipropylene glycol monomethyl ether acetate; Alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, and carbitol; Aliphatic hydrocarbons such as octane and decane; Petroleum-based solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha; Amides such as dimethylacetamide and dimethylformamide (DMF) can be mentioned. These solvents can be used individually or as a mixture of two or more types.

The solvent may be used in an appropriate amount considering the dispersibility, solubility, or viscosity of the second adhesive composition. For example, the second adhesive composition may contain 0.1% to 70% by weight of the solvent, or 1% to 1% by weight. It may contain 65% by weight. When the content of the solvent is within the above-mentioned range, the coatability of the second adhesive composition can be improved, and the second adhesive composition can be dried smoothly to reduce the stickiness of the produced film.

Meanwhile, examples of methods for producing the second adhesive composition are not greatly limited, and the above-mentioned components may be mixed using various methods, for example, a mixer, etc.

According to one embodiment of the present invention, the thickness of the second adhesive layer may be 5 ㎛ or more and 100 ㎛ or less. Specifically, the thickness of the semiconductor adhesive film is 10 ㎛ or more and 75 ㎛ or less, 10 ㎛ or more and 50 ㎛ or less, 25 ㎛ or more and 100 ㎛ or less, 50 ㎛ or more and 100 ㎛ or less, 15 ㎛ or more and 70 ㎛ or less, or 20 ㎛ or more. It may be 50 ㎛ or less.

According to one embodiment of the present invention, the semiconductor adhesive film may further include a release film (eg, a first release film), and the first adhesive layer may be provided on the release film.

1 is a diagram showing a semiconductor adhesive film according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the semiconductor adhesive film 100 according to an exemplary embodiment of the present invention includes a release film 30, a first adhesive layer 10 provided on one side of the release film 30, and a first adhesive layer ( It may include a second adhesive layer 20 provided on one side of 10).

That is, the semiconductor adhesive film may have a structure in which the release film 30, the first adhesive layer 10, and the second adhesive layer 20 are sequentially stacked. When the semiconductor adhesive film has a laminated structure in the above order, it is easy to control fillets generated during the semiconductor packaging process, and the problem of solder melting and fusion to the chip can be prevented, so quality reliability can be effectively improved.

According to one embodiment of the present invention, the semiconductor adhesive film may further include a release film (eg, a second release film), and the release film may be provided on the second adhesive layer.

According to one embodiment of the present invention, the semiconductor adhesive film includes a first adhesive layer obtained through application and drying of the above-described first adhesive composition; And a second adhesive layer obtained by applying and drying the above-described second adhesive composition on the first adhesive layer. The polymer contained in the semiconductor adhesive film is the first adhesive composition or the second adhesive composition. 2 It may include a reaction product obtained through a crosslinking reaction of components included in the adhesive composition.

In the application step, conventional methods and devices known to be used for applying the first adhesive composition or the second adhesive composition may be used, for example, the first adhesive composition or the second adhesive composition may be applied as is or After dilution in an appropriate organic solvent, it can be applied on the base film using a comma coater, blade coater, lip coater, rod coater, squeeze coater, reverse coater, transfer roll coater, grabber coater, spray coater, etc., and then dried.

According to an exemplary embodiment of the present invention, the drying temperature may be 50°C to 200°C. Specifically, the drying temperature may be 60°C to 170°C and 70°C to 150°C. Additionally, the drying time may be 2 to 30 minutes. Specifically, the drying time may be 2.5 minutes to 25 minutes, 3 minutes to 20 minutes, and 3.5 minutes to 15 minutes.

According to one embodiment of the present invention, the thickness ratio of the first adhesive layer and the second adhesive layer may be 1:9 to 9:1. Specifically, the thickness ratio of the first adhesive layer and the second adhesive layer may be 1:7 to 7:1, 1:5 to 5:1, or 1:3 to 3:1. When the thickness ratio of the above-mentioned range is satisfied, the adhesive strength of the semiconductor adhesive film being manufactured can be effectively improved, and the fillet can be easily adjusted.

According to an exemplary embodiment of the present invention, the release film for supporting the semiconductor adhesive film includes polyethylene terephthalate film, polytetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, One or more types of plastic films, such as vinyl chloride copolymer film or polyimide film, may be used.

According to one embodiment of the present invention, the surface of the release film may be subjected to release treatment with one or more types of alkyd-based, silicone-based, fluorine-based, unsaturated ester-based, polyolefin-based, or wax-based, among which, in particular, a film having heat resistance. Mold release agents such as alkyd-based, silicone-based, or fluorine-based are preferable.

According to one embodiment of the present invention, the thickness of the release film is not particularly limited, but may be 150 to 200 ㎛, 50 to 100 ㎛, or 10 to 50 ㎛.

According to one embodiment of the present invention, when measured over the entire temperature range, the lowest viscosity before curing of the first adhesive layer may be 100 pa.s or more and 300 pa.s or less. Specifically, the viscosity of the first adhesive layer is the viscosity before complete curing (primary curing of the first adhesive layer) by thermal curing, which will be described later.

According to one embodiment of the present invention, the viscosity of the second adhesive layer after primary curing may be 400 pa.s or more and 1200 pa.s or less. When measured over the entire temperature range, the lowest viscosity value before primary curing of the second adhesive layer may be 50 pa.s or more and 350 pa.s or less.

According to one embodiment of the present invention, the ratio of the viscosity of the first adhesive layer before curing and the viscosity of the second adhesive layer before curing is 1:0.17 to 1:3.5, 1:0.25 to 1:2.0, and 1:0.3 to 1. :1.8 or 1:0.4 to 1:1.6. That is, the viscosity of the second adhesive layer before curing may be the same or lower than the viscosity of the first adhesive layer before curing. In particular, the viscosity of the second adhesive layer before curing may be lower than the viscosity of the first adhesive layer before curing. When the viscosity of the second adhesive layer before curing is lower than the viscosity of the first adhesive layer before curing, in the semiconductor package process described later, the second adhesive layer can effectively bury the solder and bumps provided on the upper semiconductor chip.

According to one embodiment of the present invention, when the second adhesive layer is primary cured, the viscosity of the second adhesive layer after primary curing may be increased by more than 50% compared to the viscosity of the second adhesive layer before primary curing. there is. Specifically, the ratio of the viscosity of the second adhesive layer before curing and the viscosity of the second adhesive layer after primary curing may be 1:1.5 to 1:10, 1:2.5 to 1:8, or 1:2.9 to 1:7.9. When the ratio of the viscosity before curing of the second adhesive layer and the viscosity after primary curing is within the above-mentioned range, fillets that occur when components of the second adhesive layer are pushed out when joining the lower semiconductor chip and the upper semiconductor chip during the semiconductor package manufacturing process are It is possible to control effectively and easily produce high-quality semiconductor adhesive films.

According to an exemplary embodiment of the present invention, when the second adhesive layer is primary cured, the ratio of the viscosity of the first adhesive layer to the viscosity of the second adhesive layer after primary curing may be 1:1.5 or more. Specifically, the ratio of the viscosity of the first adhesive layer before curing and the viscosity of the second adhesive layer after primary curing is 1:1.5 or more, 1:1.5 to 1:10, 1:2.5 to 1:8, or 1:2.9 to 1:7.9. It can be. When the ratio of the viscosity of the first adhesive layer before curing and the viscosity of the second adhesive layer after primary curing is within the above-mentioned range, the components of the first adhesive layer and the second adhesive layer when bonding the lower semiconductor chip and the upper semiconductor chip during the semiconductor package manufacturing process. It is possible to effectively control the fillet that occurs when this is pushed out.

According to one embodiment of the present invention, primary curing of the second adhesive layer may be performed by irradiating heat, light, or laser to the first adhesive layer and the second adhesive layer. That is, the second adhesive layer can be primary cured by applying heat, irradiating light, or irradiating a laser to the semiconductor adhesive film. At this time, the first adhesive layer may not be hardened by heat, light, or laser. That is, by irradiating heat, light, or a laser under conditions that do not cure the first adhesive layer, the second adhesive layer can be primary cured without curing the first adhesive layer. At this time, when temporarily bonding the upper semiconductor chip and the lower semiconductor chip in the semiconductor package process described later, the second adhesive layer may be first cured.

According to one embodiment of the present invention, the primary curing of the second adhesive layer varies depending on the curing agent used, but is performed at a temperature of 50 ℃ or more and 200 ℃ or less, irradiating UV of 100 mJ or more and 500 mJ or less, or 100 mJ or more. It can be performed by irradiating a laser of 5000 mJ or less.

According to an exemplary embodiment of the present invention, the first adhesive layer may be cured secondarily and the first adhesive layer may be cured primarily by heat. That is, the first adhesive layer can be completely cured by heat, and the first adhesive layer can be secondary cured (completely cured) by heat. Through this, complete bonding of the upper semiconductor chip and the lower semiconductor chip can be achieved in the semiconductor package process described later.

According to one embodiment of the present invention, the primary curing of the first adhesive layer and the secondary curing of the second adhesive layer may be performed at a temperature of 150 ℃ or more and 300 ℃ or less.

Figure 2 is a diagram schematically showing a method of manufacturing a semiconductor package using a semiconductor adhesive film according to an embodiment of the present invention.

According to one embodiment of the present invention, the first adhesive layer is in contact with one surface of the lower semiconductor chip, and the second adhesive layer is in contact with one surface of the upper semiconductor chip, so that the lower semiconductor chip and the upper semiconductor chip can be bonded. .

Referring to FIG. 2, a bump 60 and a solder 70 may be provided on one side of the upper semiconductor chip 40, and a bump 60' may be provided on one side of the lower semiconductor chip 50. At this time, the first adhesive layer 10 of the semiconductor adhesive film may be in contact with one surface of the lower semiconductor chip 50, and the second adhesive layer 20 may be in contact with one surface of the upper semiconductor chip 40. As shown in FIG. 2 , the upper semiconductor chip 40 can be stacked on the lower semiconductor chip 50 using the first adhesive layer 10 and the second adhesive layer 20 . Thereafter, as described above, temporary bonding can be performed by first curing the second adhesive layer, and permanent bonding can be performed by completely curing the first adhesive layer and the second adhesive layer.

One embodiment of the present invention provides a semiconductor package including the semiconductor adhesive film.

The semiconductor adhesive film can be used to adhere a semiconductor, and the semiconductor may include a circuit board and a semiconductor chip. The circuit board may include a printed circuit board (PCB), a semiconductor package board, or a flexible semiconductor package (FPCB) board.

Hereinafter, the present invention will be described in detail with reference to examples. However, the embodiments according to the present invention may be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments of this specification are provided to more completely explain the present invention to those skilled in the art.

Example 1

Preparation of the first adhesive composition

The first thermosetting resin was prepared by mixing cresol novolak-based solid epoxy and bisphenol A-based liquid epoxy. As the first thermoplastic resin, acrylate resin KG-3015 (Mw: 900,000, glass transition temperature: 10°C, 15% solid content in methyl ethyl ketone) was prepared. Phenol novolak as the first heat curing agent, 2-phenyl-4,5-dihydroxy methyl imidazole as the first curing catalyst, and average particle diameter of 0.7 as the first inorganic filler. ㎛ silica was prepared. Methyl ethyl ketone was prepared as a solvent.

Afterwards, the prepared first thermosetting resin, first thermoplastic resin, first thermosetting agent, first curing catalyst, first inorganic filler, and solvent were mixed to obtain a first adhesive layer composition (solid content: 45% by weight). At this time, based on 100 parts by weight of solid content (total weight of the first thermosetting resin, first thermoplastic resin, first thermosetting agent, first curing catalyst, and first inorganic filler), the content of cresol novolak-based epoxy is about 10 parts by weight. , the content of the bisphenol A-based liquid epoxy is about 10 parts by weight, the content of KG-3015 is about 15 parts by weight, the content of the first heat curing agent is about 17 parts by weight, the content of the first curing catalyst is about 3 parts by weight, 1 The content of inorganic filler was about 45 parts by weight.

Preparation of the second adhesive composition

The second thermosetting resin was prepared by mixing cresol novolak-based solid epoxy and bisphenol A-based liquid epoxy. As a second thermoplastic resin, acrylate resin KG-3015 (Mw: 900,000, glass transition temperature: 10°C, 15% solid content in methyl ethyl ketone) was prepared. Ethylene glycol diacrylate was prepared as a reactive (meth)acrylate-based compound. Phenol novolak as the second heat curing agent, 2-phenyl-4,5-dihydroxy methyl imidazole as the second curing catalyst, and average particle diameter of 0.7 as the second inorganic filler. ㎛ silica was prepared. Methyl ethyl ketone was prepared as a solvent.

Thereafter, the prepared second thermosetting resin, second thermoplastic resin, reactive (meth)acrylate-based compound, second thermosetting agent, second curing catalyst, second inorganic filler, and solvent were mixed to form a second adhesive layer composition (solid content 60 weight) %) was obtained. At this time, based on 100 parts by weight of solid content (total weight of the second thermosetting resin, second thermoplastic resin, reactive (meth)acrylate-based compound, second thermosetting agent, second curing catalyst, and second inorganic filler), cresol novolac The content of the solid epoxy is about 7 parts by weight, the content of the bisphenol A liquid epoxy is about 7 parts by weight, the content of KG-3015 is about 18 parts by weight, and the content of the reactive (meth)acrylate compound is about 3 parts by weight. , the content of the second heat curing agent was about 17 parts by weight, the content of the second curing catalyst was about 3 parts by weight, and the content of the second inorganic filler was about 45 parts by weight.

Manufacturing of semiconductor adhesive film

The first adhesive composition was applied on the release-treated PET film (release film) using a comma coater, and then dried at 120° C. for 3 minutes to form a first adhesive layer with a thickness of 10 μm. Thereafter, the second adhesive composition was used to form a second adhesive layer with a thickness of 10 ㎛ in the same manner on the formed first adhesive layer, thereby forming a double layer (first adhesive layer/second adhesive layer) of a total of 20 ㎛ on the release film for semiconductor adhesion. A film was prepared.

Example 2 and Example 3

The first adhesive composition was prepared in the same manner as in Example 1.

The same second thermosetting resin, second thermoplastic resin, reactive (meth)acrylate-based compound, second thermosetting agent, second curing catalyst, second inorganic filler, and solvent as in Example 1 were prepared. Thereafter, a second adhesive composition was prepared in the same manner as Example 1, except that the content of the ingredients was adjusted as shown in Table 2 below.

Thereafter, a semiconductor adhesive film was manufactured in the same manner as Example 1.

First adhesive composition Example 1 First thermosetting resin Cresol novolak-based solid epoxy 10 parts by weight Bisphenol A liquid epoxy 10 parts by weight First thermoplastic resin 15 parts by weight 1st heat curing agent 17 parts by weight First curing catalyst 3 parts by weight 1st inorganic filler 45 parts by weight

Second adhesive composition Example 1 Example 2 Example 3 Comparative Example 1 Second thermosetting resin Cresol novolak-based solid epoxy 7 parts by weight 15 parts by weight 14.5 parts by weight 7.5 parts by weight Bisphenol A liquid epoxy 7 parts by weight 15 parts by weight 14.5 parts by weight 7.5 parts by weight Second thermoplastic resin 18 parts by weight 15 parts by weight 13 parts by weight 20 parts by weight Reactive (meth)acrylate-based compounds 3 parts by weight 0.5 parts by weight 4 parts by weight 0 parts by weight Second heat curing agent 17 parts by weight 12 parts by weight 12 parts by weight 17 parts by weight Second curing catalyst 3 parts by weight 2.5 parts by weight 2 parts by weight 3 parts by weight 2nd inorganic filler 45 parts by weight 40 parts by weight 40 parts by weight 45 parts by weight

Comparative Example 1

The first adhesive composition was prepared in the same manner as in Example 1.

The same second thermosetting resin, second thermoplastic resin, reactive (meth)acrylate-based compound, second thermosetting agent, second curing catalyst, second inorganic filler, and solvent as in Example 1 were prepared. Thereafter, a second adhesive composition was prepared in the same manner as in Example 1, except that the content of the components was adjusted as shown in Table 2 above.

Thereafter, a semiconductor adhesive film was manufactured in the same manner as in Example 1.

Experiment example

Viscosity measurement

Viscosity before primary curing of the first adhesive layer containing the first adhesive composition prepared in the above examples and comparative examples, and before and after primary curing of the second adhesive layer containing the second adhesive composition (secondary curing Before) the viscosity was measured and shown in Tables 3 and 4 below.

Specifically, to measure the viscosity, the first adhesive composition and the second adhesive composition of Examples 1 to 3 and Comparative Example 1 were degassed in a bubble-free state and sampled as a 500㎛ thick film, and the viscosity was measured at 25 While increasing the temperature from ℃ to 300℃ at 5℃/min, the viscosity was measured using a Haake viscometer and the minimum value of viscosity was compared.

Reclamation evaluation

When observing with an optical microscope after embedding adhesive in a semiconductor chip with a bump, it was evaluated as "Fail" if there was more than one unembedded area of 1㎛ or more in length, and "OK" if there were zero, and the results are as follows. It is shown in Table 4.

Solder jointability evaluation

The semiconductor packages manufactured in the above examples and comparative examples were evaluated for connection bump (solder) joining in the following manner, and the results are shown in Table 4 below.

In order to specifically observe the chip cross-section of the manufactured semiconductor package, a sample was manufactured by grinding. Afterwards, the cross section of the sample was observed with an SEM to check whether adhesive was stuck in the connection bump portion.

At this time, if the connection bump is attached to both of the two adjacent connection parts and there is no adhesive in the connection bump, it is evaluated as "O", and if the connection bump is attached to both of the two adjacent connection parts but there is adhesive in the connection bump, it is evaluated as "△" It was evaluated as ", and if adhesive was stuck in the connection bump and the connection bump was attached to only one of the two adjacent connection parts or not to both of the two connection parts, it was evaluated as "X".

first adhesive layer Example 1 Example 2 Example 3 Comparative Example 1 Viscosity before primary curing of the first adhesive layer (pa.s) 213

second adhesive layer Example 1 Example 2 Example 3 Comparative Example 1 Viscosity before primary curing of the second adhesive layer
(pa.s) 330 151 104 980 Viscosity after primary curing of the second adhesive layer
(Viscosity before secondary curing of the second adhesive layer)
(pa.s) 1001 449 817 986 reclamation OK OK OK Fail Solder jointability O O O X

100: Semiconductor adhesive film
10: first adhesive layer
20: second adhesive layer
30: release film
40: Top Chip
50: bottom chip
60, 60': Bump
70: Solder

Claims (14)

A first adhesive layer including a first adhesive composition including a first thermosetting resin, a first thermoplastic resin, and a first curing agent; and
It is provided on the first adhesive layer and includes a second adhesive composition comprising a second thermosetting resin, a second thermoplastic resin, a second curing agent, and a reactive (meth)acrylate-based compound containing two or more (meth)acrylate groups. A semiconductor adhesive film comprising a second adhesive layer.
In claim 1,
When the second adhesive layer is primary cured,
A semiconductor adhesive film wherein the viscosity of the second adhesive layer after primary curing is increased by more than 50% compared to the viscosity of the second adhesive layer before primary curing.
In claim 1,
When the second adhesive layer is primary cured,
The ratio of the viscosity of the first adhesive layer to the viscosity of the second adhesive layer after primary curing is 1:1.5 or more.
In claim 2,
The primary curing of the second adhesive layer is,
A semiconductor adhesive film performed by irradiating heat, light or laser to the first adhesive layer and the second adhesive layer.
In claim 2,
by heat,
The semiconductor adhesive film wherein the first adhesive layer is subjected to secondary curing and the first adhesive layer is primary cured.
In claim 1,
The first adhesive layer is in contact with one surface of the lower semiconductor chip, and the second adhesive layer is in contact with one surface of the upper semiconductor chip, so that the lower semiconductor chip and the upper semiconductor chip are bonded.
According to paragraph 1,
The content of the second thermosetting resin is,
A film for semiconductor adhesive, which is 10 parts by weight or more and 40 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition.
According to paragraph 1,
The content of the second thermoplastic resin is,
A semiconductor adhesive film having a solid content of 5 parts by weight or more and 20 parts by weight or less, based on 100 parts by weight of the solid content of the second adhesive composition.
According to paragraph 1,
The content of the second hardener is,
A semiconductor adhesive film that is 3 parts by weight or more and 20 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition.
According to paragraph 1,
The content of the reactive (meth)acrylate-based compound is,
A semiconductor adhesive film having a solid content of 0.1 parts by weight or more and 4 parts by weight or less, based on 100 parts by weight of the solid content of the second adhesive composition.
According to paragraph 1,
The second adhesive composition is a semiconductor adhesive film further comprising at least one of a second inorganic filler, a second curing catalyst, and a second flux agent.
According to clause 11,
The content of the second inorganic filler is
A film for semiconductor adhesive, which is 30 parts by weight or more and 60 parts by weight or less, based on 100 parts by weight of solid content of the second adhesive composition.
According to paragraph 1,
The first thermosetting resin and the second thermosetting resin each independently include at least one of a solid epoxy resin and a liquid epoxy resin.
According to paragraph 1,
The first thermoplastic resin and the second thermoplastic resin are each independently selected from polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive A semiconductor adhesive film comprising at least one of butadiene acrylonitrile copolymer rubber and (meth)acrylate-based resin.