KR20230161219A - Composition of slurry for polishing silicon wafer - Google Patents
Composition of slurry for polishing silicon wafer Download PDFInfo
- Publication number
- KR20230161219A KR20230161219A KR1020220060960A KR20220060960A KR20230161219A KR 20230161219 A KR20230161219 A KR 20230161219A KR 1020220060960 A KR1020220060960 A KR 1020220060960A KR 20220060960 A KR20220060960 A KR 20220060960A KR 20230161219 A KR20230161219 A KR 20230161219A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- slurry composition
- propanol
- amino
- hydroxide
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 91
- 239000002002 slurry Substances 0.000 title claims abstract description 81
- 239000000203 mixture Substances 0.000 title claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 69
- 229920000642 polymer Polymers 0.000 claims abstract description 24
- 150000001413 amino acids Chemical class 0.000 claims abstract description 23
- 239000006174 pH buffer Substances 0.000 claims abstract description 23
- 229920000620 organic polymer Polymers 0.000 claims abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 22
- -1 polyoxyethylene methyl ether Polymers 0.000 claims description 17
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 229940043237 diethanolamine Drugs 0.000 claims description 13
- 239000003002 pH adjusting agent Substances 0.000 claims description 13
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 12
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 12
- 239000004793 Polystyrene Substances 0.000 claims description 12
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 12
- 229920002223 polystyrene Polymers 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- CWSZBVAUYPTXTG-UHFFFAOYSA-N 5-[6-[[3,4-dihydroxy-6-(hydroxymethyl)-5-methoxyoxan-2-yl]oxymethyl]-3,4-dihydroxy-5-[4-hydroxy-3-(2-hydroxyethoxy)-6-(hydroxymethyl)-5-methoxyoxan-2-yl]oxyoxan-2-yl]oxy-6-(hydroxymethyl)-2-methyloxane-3,4-diol Chemical group O1C(CO)C(OC)C(O)C(O)C1OCC1C(OC2C(C(O)C(OC)C(CO)O2)OCCO)C(O)C(O)C(OC2C(OC(C)C(O)C2O)CO)O1 CWSZBVAUYPTXTG-UHFFFAOYSA-N 0.000 claims description 11
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 11
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 10
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 10
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 9
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 9
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- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 9
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- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 8
- IUXYVKZUDNLISR-UHFFFAOYSA-N 2-(tert-butylamino)ethanol Chemical compound CC(C)(C)NCCO IUXYVKZUDNLISR-UHFFFAOYSA-N 0.000 claims description 7
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 7
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 7
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 7
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 claims description 6
- HHKUQCFQGCCLGA-UHFFFAOYSA-N 1-[2-hydroxyethyl(2-hydroxypropyl)amino]propan-2-ol Chemical compound CC(O)CN(CCO)CC(C)O HHKUQCFQGCCLGA-UHFFFAOYSA-N 0.000 claims description 6
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 6
- MVVQNBYRSDXHRF-UHFFFAOYSA-N 2-[2-hydroxyethyl(2-methylpropyl)amino]ethanol Chemical compound CC(C)CN(CCO)CCO MVVQNBYRSDXHRF-UHFFFAOYSA-N 0.000 claims description 6
- HHRGNKUNRVABBN-UHFFFAOYSA-N 2-[2-hydroxyethyl(propan-2-yl)amino]ethanol Chemical compound OCCN(C(C)C)CCO HHRGNKUNRVABBN-UHFFFAOYSA-N 0.000 claims description 6
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims description 6
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 6
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
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- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 6
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- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 claims description 6
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- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 실리콘 웨이퍼 연마용 슬러리 조성물에 대한 것으로서, 보다 구체적으로, 유기 중합체를 포함하는 유기 연마입자, pH 버퍼, 아미노산 및 비이온성 고분자를 포함할 수 있다.The present invention relates to a slurry composition for polishing silicon wafers, and more specifically, it may include organic abrasive particles containing an organic polymer, a pH buffer, an amino acid, and a nonionic polymer.
Description
본 발명은 실리콘 웨이퍼 연마용 슬러리 조성물에 관한 것이다.The present invention relates to a slurry composition for polishing silicon wafers.
화학기계적 연마(CMP) 공정은 반도체 웨이퍼 표면을 연마 패드에 접촉하여 회전 운동을 하면서 연마제와 각종 화합물들이 함유된 슬러리를 이용하여 평탄하게 연마하는 공정을 말한다. 일반적으로 금속의 연마 공정은 산화제에 의하여 금속 산화물(MOx)이 형성되는 과정과 형성된 금속 산화물을 연마입자가 제거하는 과정이 반복하여 일어나는 것으로 알려져 있다.The chemical mechanical polishing (CMP) process refers to a process of polishing the surface of a semiconductor wafer flat using a slurry containing abrasives and various compounds while rotating the surface of a semiconductor wafer in contact with a polishing pad. It is generally known that the metal polishing process involves repeatedly forming metal oxide (MOx) by an oxidizing agent and removing the formed metal oxide with abrasive particles.
반도체 소자가 다양해지고 고집적화됨에 따라 더욱 미세한 패턴 형성 기술이 사용되고 있으며, 그에 따라 반도체 소자의 표면 구조가 더욱 복잡해지고 표면 막들의 단차도 더욱 커지고 있다. 반도체 소자를 제조하는 데 있어서 웨이퍼 상에 형성된 특정한 막에서의 단차를 제거하기 위한 평탄화 기술로서 CMP(chemical mechanical polishing) 공정이 이용된다. CMP 조성물은 한 유형의 집적 회로 성분 을 또 다른 성분에 대해 제거하는데 있어서 선택적이다. 웨이퍼 표면의 CMP를 위한 조성물 및 방법은 관련 기술분야에 널리 공지되어 있다. 반도체 웨이퍼 표면의 연마를 위한 CMP 슬러리 조성물은 전형적으로 연마입자, 다양한 첨가 화합물 등을 포함한다. 3차원 트랜지스터 적층을 갖는 플래시 메모리 장치(3D 플래시 메모리)가 점점 더 인기있다. 3D 플래시 응용을 위한 연마 슬러리는 일반적으로 다결정실리콘의 높은 연마율, 산화실리콘의 연마선택비 뿐만 아니라 양호한 표면 토포그래피 및 낮은 결함 수준 등을 제공해야한다. 또한, 무기 입자로 이루어진 연마 입자가 연마 후 표면에 잔류하거나, 연마 진행 시 발생하는 스크래치 등으로 기인되는 입자성 디펙(defect)을 개선하고, 알칼리 영역에서만 제한된 pH 영역에서만 가능한 다결정실리콘 막질의 고연마율이 확보되는 연마 슬러리 조성물의 한계를 극복해야한다. As semiconductor devices become more diverse and highly integrated, finer pattern formation technologies are being used, and as a result, the surface structures of semiconductor devices are becoming more complex and the steps between surface films are becoming larger. In manufacturing semiconductor devices, a CMP (chemical mechanical polishing) process is used as a planarization technology to remove steps in a specific film formed on a wafer. CMP compositions are selective in removing one type of integrated circuit component relative to another component. Compositions and methods for CMP of wafer surfaces are well known in the art. CMP slurry compositions for polishing the surface of a semiconductor wafer typically include abrasive particles and various additive compounds. Flash memory devices with three-dimensional transistor stacking (3D flash memory) are increasingly popular. Polishing slurries for 3D flash applications must generally provide high removal rates for polycrystalline silicon and polishing selectivity for silicon oxide, as well as good surface topography and low defect levels. In addition, it improves particle defects caused by abrasive particles made of inorganic particles remaining on the surface after polishing or scratches occurring during polishing, and provides high polishing of polycrystalline silicon film that is possible only in alkaline areas and limited pH areas. The limitations of the polishing slurry composition must be overcome to ensure the rate is secured.
전술한 배경기술은 발명자가 본원의 개시 내용을 도출하는 과정에서 보유하거나 습득한 것으로서, 반드시 본 출원 전에 일반 공중에 공개된 공지기술이라고 할 수는 없다.The above-mentioned background technology is possessed or acquired by the inventor in the process of deriving the disclosure of the present application, and cannot necessarily be said to be known technology disclosed to the general public before the present application.
상술한 문제를 해결하기 위해, 본 발명은 다결정실리콘의 높은 연마 성능, 예를 들어, 알칼리 영역에서 높은 연마 성능을 구현할 수 있는, 실리콘 웨이퍼 연마용 슬러리 조성물을 제공하고자 한다.In order to solve the above-mentioned problems, the present invention seeks to provide a slurry composition for polishing silicon wafers, which can realize high polishing performance of polycrystalline silicon, for example, high polishing performance in an alkaline region.
그러나, 본 발명이 해결하고자 하는 과제는 이상에서 언급한 과제로 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 해당 기술분야의 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.However, the problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the description below.
본 발명의 일 실시예에 따라, 유기 중합체를 포함하는 유기 연마입자; pH 버퍼; 아미노산; 및 비이온성 고분자;를 포함하는, 실리콘 웨이퍼 연마용 슬러리 조성물에 관한 것이다 According to one embodiment of the present invention, organic abrasive particles containing an organic polymer; pH buffer; amino acid; It relates to a slurry composition for polishing silicon wafers, comprising a nonionic polymer.
본 발명의 일 실시예에 따라, 상기 연마입자는, 음전하를 띠는 것일 수 있다.According to one embodiment of the present invention, the abrasive particles may have a negative charge.
본 발명의 일 실시예에 따라, 상기 연마입자의 직경은, 10 ㎚ 내지 200 ㎚인 것일 수 있다. According to one embodiment of the present invention, the diameter of the abrasive particles may be 10 nm to 200 nm.
본 발명의 일 실시예에 따라, 상기 연마입자는, 상기 슬러리 조성물 중 0.01 중량% 내지 10 중량%인 것일 수 있다. According to one embodiment of the present invention, the abrasive particles may be 0.01% by weight to 10% by weight of the slurry composition.
본 발명의 일 실시예에 따라,상기 연마입자는, 폴리스타이렌, 폴리메틸메타크릴레이트 및 폴리비닐아세테이트로 이루어진 군에서 선택된 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the abrasive particles may include at least one selected from the group consisting of polystyrene, polymethyl methacrylate, and polyvinylacetate.
본 발명의 일 실시예에 따라, 상기 pH 버퍼는, 유기산, 아민 또는 이 둘을 포함하고 상기 pH 버퍼는, 상기 슬러리 조성물 중 0.01 중량% 내지 2 중량%인 것일 수 있다. According to one embodiment of the present invention, the pH buffer may include an organic acid, an amine, or both, and the pH buffer may be 0.01% to 2% by weight of the slurry composition.
본 발명의 일 실시예에 따라, 상기 유기산은, 시트르산(citric acid), 옥살산(oxalic acid), 프로피온산(propionic acid), 스테아린산(stearic acid), 피루브산(pyruvic acid), 피콜린산(Picolinic acid), 아세트산(acetic acid), 아세토아세트산(acetoacetic acid), 글리옥실산(glyoxylic acid), 말산(malic acid), 말론산(malonic acid), 디메틸말론산(dimethyl malonic acid), 말레산(maleic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 2-메틸아디프산(2-methyl adipic acid), 트리메틸아디프산(trimethyl adipic acid), 피메린산(pimelic acid), 프탈산(phthalic acid), 트리멜리트산(trimellitic acid), 타르타르산(tartaric acid), 글리콜산(glycollic acid), 2,2-디메틸글루타르산(2,2-dimethyl glutaric acid), 락트산(lactic acid), 글루타르산(glutaric acid), 뷰티르산(butyric acid), 숙신산(succinic acid), 3,3-디에틸 숙신산(3,3-diethyl succinic acid) 및 아스코르빈산(ascorbic acid)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the organic acids include citric acid, oxalic acid, propionic acid, stearic acid, pyruvic acid, and picolinic acid. , acetic acid, acetoacetic acid, glyoxylic acid, malic acid, malonic acid, dimethyl malonic acid, maleic acid. , glutaric acid, adipic acid, 2-methyl adipic acid, trimethyl adipic acid, pimelic acid, phthalic acid. (phthalic acid), trimellitic acid, tartaric acid, glycolic acid, 2,2-dimethyl glutaric acid, lactic acid, Selected from the group consisting of glutaric acid, butyric acid, succinic acid, 3,3-diethyl succinic acid, and ascorbic acid. It may include at least one of the following.
본 발명의 일 실시예에 따라, 상기 아민은, 모노에탄올아민(monoethanolamine), 다이에탄올아민(diethanolamine), 트리에탄올아민(triethanolamine), N-메틸디에탄올아민(N-methyldiethanolamine), N-프로필디에탄올아민(N-propyldiethanolamine), N-이소프로필디에탄올아민(N-isopropyldiethanolamine), N-(2-메틸프로필)디에탄올아민(N-(2-methylpropyl)diethanolamine), N-n-부틸디에탄올아민(N-n-butyldiethanolamine), N-t-부틸에탄올아민(N-t-butylethanolamine), N-사이클로헥실디에탄올아민(N-cyclohexyldiehtnaolamine), N,N-비스(2-하이드록시프로필)에탄올아민(N,N-bis(2-hydroxypropyl)ethanolamine) 및 트리아이소프로판올아민(triisopropanolamine)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the amine is monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-propyldiethanol. Amine (N-propyldiethanolamine), N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine (N-n) -butyldiethanolamine), N-t-butylethanolamine, N-cyclohexyldiethanolamine (N-cyclohexyldiehtnaolamine), N,N-bis(2-hydroxypropyl)ethanolamine (N,N-bis(2) -hydroxypropyl)ethanolamine) and triisopropanolamine.
본 발명의 일 실시예에 따라, 상기 아미노산은, 글리신(glycine), 프롤린(proline), 히스티딘(Histidine), 리신(Lysine) 및 아르기닌(arginine)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the amino acid may include at least one selected from the group consisting of glycine, proline, histidine, lysine, and arginine. there is.
본 발명의 일 실시예에 따라, 상기 아미노산은, 상기 슬러리 조성물 중 0.01 중량% 내지 3 중량%인 것일 수 있다. According to one embodiment of the present invention, the amino acid may be 0.01% to 3% by weight of the slurry composition.
본 발명의 일 실시예에 따라, 상기 비이온성 고분자는, 2-하이드록시에틸 셀룰로오스(2-hydroxyethyl cellulose), 하이드록시메틸 셀룰로오스(HMC), 하이드록시프로필 셀룰로오즈(HPC), 하이드록시프로필 메틸 셀룰로오즈(HPMC), 카르복시메틸 셀룰로오스(CMC), 메틸셀룰로오스(MC), 메틸하이드록시에틸 셀룰로오스(MHEC), 옥사졸린기 함유 폴리머, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 폴리옥시알킬렌알킬에테르, 폴리옥시알킬렌알킬에스테르, 폴리옥시에틸렌메틸에테르, 폴리에틸렌글리콜술포닉산, 폴리비닐알코올, 폴리에틸렌옥사이드, 폴리프로필렌옥사이드, 폴리알킬옥사이드, 폴리옥시에틸렌옥사이드, 폴리에틸렌옥사이드-프로필렌옥사이드 공중합체, 셀룰로오스, 메틸히드록시프로필셀룰로오스, 카르복시메틸셀룰로오스, 카르복시메틸히드록시에틸셀룰로오스, 설포에틸셀룰로오스, 카르복시메틸설포에틸셀룰로오스, 키토산, 젤라틴, 잔탄검, 콜라겐, 카라기난, 플루란, 펙틴, 콘드로이틴 설페이트, 알긴산, 덱스트란, 베타 글루칸 및 히아루론산으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the nonionic polymer is 2-hydroxyethyl cellulose (2-hydroxyethyl cellulose), hydroxymethyl cellulose (HMC), hydroxypropyl cellulose (HPC), hydroxypropyl methyl cellulose ( HPMC), carboxymethyl cellulose (CMC), methylcellulose (MC), methylhydroxyethyl cellulose (MHEC), oxazoline group-containing polymer, polyethylene glycol, polypropylene glycol, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl Ester, polyoxyethylene methyl ether, polyethylene glycol sulphonic acid, polyvinyl alcohol, polyethylene oxide, polypropylene oxide, polyalkyl oxide, polyoxyethylene oxide, polyethylene oxide-propylene oxide copolymer, cellulose, methylhydroxypropylcellulose, carboxylic acid. Composed of methylcellulose, carboxymethylhydroxyethylcellulose, sulfoethylcellulose, carboxymethylsulfoethylcellulose, chitosan, gelatin, xanthan gum, collagen, carrageenan, pullulan, pectin, chondroitin sulfate, alginic acid, dextran, beta glucan and hyaluronic acid. It may include at least one selected from the group.
본 발명의 일 실시예에 따라, 상기 비이온성 고분자는, 상기 슬러리 조성물 중 0.001 중량% 내지 0.1 중량%인 것일 수 있다. According to one embodiment of the present invention, the nonionic polymer may be 0.001% by weight to 0.1% by weight of the slurry composition.
본 발명의 일 실시예에 따라, 상기 슬러리 조성물은, pH 조절제를 더 포함하고, 상기 pH 조절제는, 수산화 칼륨, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산, 과염소산, 트리에탄올아민, 트리메탄올아민, 모노에탄올아민, 디에탄올아민, 디메틸벤질아민, 에톡시벤질아민, 2-아미노-2-메틸-1-프로판올, 2-아미노-2-에틸-1,3-프로판디올, 트리스(히드록시메틸)아미노메탄, 2-아미노-1-부탄올, 2-아미노-2-메틸-1,3-프로판디올, 디메틸아미노메틸프로판올, 디에틸아미노에탄올, 모노이소프로판올아민, 아미노에틸에탄올아민, 3-아미노-1-프로판올, 2-아미노-1-프로판올, 1-아미노-2-프로판올, 1-아미노-펜탄올, 2-(2-아미노에틸아미노)에탄올, 2-디메틸아미노-2-메틸-1-프로판올, N,N-디에틸에탄올아민, 암모니아, 암모늄메틸프로판올(Ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(Tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸, 모노에탄올아민(Monoethanolamine, MEA), 다이에탄올아민(Diethanol amine, DEA), 트리에탄올아민(TEA), 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에탄올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민, 테트라에틸암모늄하이드록사이드(Tetraethyl ammonium hydroxide, TEAH), 테트라프로필암모늄하이드록사이드(Tetrapropylammonium hydroxide, TPAH), 테트라부틸암모늄하이드록사이드(Tetrabutylammonium hydroxide), 테트라펜틸암모늄(Tetrapentylammonium hydroxide, TBAH), 메틸(트리하이드록시에틸)암모늄하이드록사이드(Methyl(trishydroxyethyl)ammonium hydroxide), 트리부틸에틸암모늄하이드록사이드(Tributylethylammonium hydroxide), (2-하이드록시에틸)트리에틸암모늄하이드록사이드((2-hydroxyethyl),triethylammonium hydroxide), (2-하이드록시에틸)트리프로필암모늄하이드록사이드((2-hydroxyethyl) tripropylammonium hydroxide) 및 (1-하이드록시프로필)트리에틸암모늄하이드록사이드((1-hydroxypropyl) trimethylammonium hydroxide)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the slurry composition further includes a pH adjuster, and the pH adjuster is potassium hydroxide, sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, bromic acid, iodic acid, hydrochloric acid, and perchloric acid. , triethanolamine, trimethanolamine, monoethanolamine, diethanolamine, dimethylbenzylamine, ethoxybenzylamine, 2-amino-2-methyl-1-propanol, 2-amino-2-ethyl-1,3-propane Diol, tris(hydroxymethyl)aminomethane, 2-amino-1-butanol, 2-amino-2-methyl-1,3-propanediol, dimethylaminomethylpropanol, diethylaminoethanol, monoisopropanolamine, aminoethyl Ethanolamine, 3-amino-1-propanol, 2-amino-1-propanol, 1-amino-2-propanol, 1-amino-pentanol, 2-(2-aminoethylamino)ethanol, 2-dimethylamino- 2-methyl-1-propanol, N,N-diethylethanolamine, ammonia, ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide , sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate, sodium carbonate, imidazole, monoethanolamine (MEA), diethanol amine (DEA), triethanolamine (TEA), 1,5 -Diamino-3-pentanol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino-1-propanol, 2-(2-aminoethylamino)ethanol, 2-di Ethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl)diethanolamine, N-n-butyldiethanolamine, N-t-butylethanolamine, N-cyclohexyldiethanolamine, 2-(dimethylamino)ethanol, 2-diethylaminoethanol, 2-diethanolamine Propylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino-2-pentanol, 2-[bis(2-hydroxyethyl)amino]-2-methyl -1-propanol, 2-[bis(2-hydroxyethyl)amino]-2-propanol, N,N-bis(2-hydroxypropyl)ethanolamine, 2-amino-2-methyl-1-propanol, Tris(hydroxymethyl)aminomethane, triisopropanolamine, tetraethyl ammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide , Tetrapentylammonium hydroxide (TBAH), Methyl(trishydroxyethyl)ammonium hydroxide, Tributylethylammonium hydroxide, (2-hydroxyethyl) Triethylammonium hydroxide ((2-hydroxyethyl),triethylammonium hydroxide), (2-hydroxyethyl)tripropylammonium hydroxide and (1-hydroxypropyl)triethylammonium It may contain at least one selected from the group consisting of hydroxide ((1-hydroxypropyl) trimethylammonium hydroxide).
본 발명의 일 실시예에 따라, 상기 pH 조절제는, 상기 슬러리 조성물 중 0.0001 중량% 내지 3 중량%인 것일 수 있다. According to one embodiment of the present invention, the pH adjuster may be 0.0001% by weight to 3% by weight of the slurry composition.
본 발명의 일 실시예에 따라, 상기 슬러리 조성물의 pH는, 8.0 내지 12.0인 것일 수 있다. According to one embodiment of the present invention, the pH of the slurry composition may be 8.0 to 12.0.
본 발명은 유기 중합체로 이루어진 연마 입자를 포함하여 다결정 실리콘의 높은 연마 성능, 예를 들어, 알칼리 영역에서 높은 연마 성능을 구현할 수 있고, 연마 후 표면의 품질, 예를 들어, 입자성 디펙(defect) 등의 표면 결함에 대한 개선 효과가 매우 우수한 다결정 실리콘 연마용 슬러리 조성물을 제공할 수 있다.The present invention can realize high polishing performance of polycrystalline silicon, for example, high polishing performance in an alkaline region, by including abrasive particles made of organic polymer, and can improve the surface quality after polishing, for example, particle defects. A slurry composition for polycrystalline silicon polishing that has an excellent improvement effect on surface defects such as the like can be provided.
이하에서, 실시예들을 상세하게 설명한다. 그러나, 실시예들에는 다양한 변경이 가해질 수 있어서 특허출원의 권리 범위가 이러한 실시예들에 의해 제한되거나 한정되는 것은 아니다. 실시예들에 대한 모든 변경, 균등물 내지 대체물이 권리 범위에 포함되는 것으로 이해되어야 한다.Below, embodiments are described in detail. However, various changes can be made to the embodiments, so the scope of the patent application is not limited or limited by these embodiments. It should be understood that all changes, equivalents, or substitutes for the embodiments are included in the scope of rights.
실시예에서 사용한 용어는 단지 설명을 목적으로 사용된 것으로, 한정하려는 의도로 해석되어서는 안 된다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 명세서에서, "포함하다" 또는 "가지다" 등의 용어는 명세서 상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terms used in the examples are for descriptive purposes only and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as “comprise” or “have” are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are not intended to indicate the presence of one or more other features. It should be understood that this does not exclude in advance the possibility of the existence or addition of elements, numbers, steps, operations, components, parts, or combinations thereof.
다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 실시예가 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by a person of ordinary skill in the technical field to which the embodiments belong. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless explicitly defined in the present application, should not be interpreted in an ideal or excessively formal sense. No.
또한, 실시예의 구성요소를 설명하는 데 있어서, 제1, 제2, A, B, (a), (b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성요소를 다른 구성요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성요소의 본질이나 차례 또는 순서 등이 한정되지 않는다. 어떤 구성요소가 다른 구성요소에 "연결", "결합" 또는 "접속"된다고 기재된 경우, 그 구성요소는 그 다른 구성요소에 직접적으로 연결되거나 접속될 수 있지만, 각 구성요소 사이에 또 다른 구성요소가 "연결", "결합" 또는 "접속"될 수도 있다고 이해되어야 할 것이다.Additionally, in describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, order, or order of the component is not limited by the term. When a component is described as being “connected,” “coupled,” or “connected” to another component, that component may be directly connected or connected to that other component, but there is no additional component between each component. It should be understood that may be “connected,” “combined,” or “connected.”
어느 하나의 실시예에 포함된 구성요소와, 공통적인 기능을 포함하는 구성요소는, 다른 실시 예에서 동일한 명칭을 사용하여 설명하기로 한다. 반대되는 기재가 없는 이상, 어느 하나의 실시 예에 기재한 설명은 다른 실시 예에도 적용될 수 있으며, 중복되는 범위에서 구체적인 설명은 생략하기로 한다.Components included in one embodiment and components including common functions will be described using the same names in other embodiments. Unless stated to the contrary, the description given in one embodiment may be applied to other embodiments, and detailed description will be omitted to the extent of overlap.
본 발명의 일 실시예에 따른 실리콘 웨이퍼 연마용 슬러리 조성물은, 유기 연마입자, pH 버퍼, 아미노산 및 비이온성 고분자를 포함할 수 있다.A slurry composition for polishing silicon wafers according to an embodiment of the present invention may include organic abrasive particles, a pH buffer, amino acids, and nonionic polymers.
일 실시예에 따르면, 연마입자는 폴리스타이렌, 폴리메틸메타크릴레이트, 폴리비닐아세테이트, 폴리(메틸메타크릴레이트-코-에틸 아크릴레이트), 폴리(비닐 부티랄-코-비닐 알콜-코-비닐 아세테이트), 폴리비닐클로라이드, 폴리아마이드, 폴리에틸렌, 폴리프로필렌, 폴리우레탄 및 폴리아크릴레이트로 이루어진 군에서 선택된 적어도 하나 이상을 포함할 수 있다. 다만, 이 외에도 통상적으로 실리콘 웨이퍼 연마용 슬러리 조성물에 사용되는 연마입자를 적용할 수 있다.According to one embodiment, the abrasive particles are polystyrene, polymethyl methacrylate, polyvinyl acetate, poly(methyl methacrylate-co-ethyl acrylate), poly(vinyl butyral-co-vinyl alcohol-co-vinyl acetate) ), polyvinyl chloride, polyamide, polyethylene, polypropylene, polyurethane, and polyacrylate. However, in addition to this, abrasive particles commonly used in slurry compositions for silicon wafer polishing can be applied.
일 실시예에 따르면, 연마입자는, 음전하를 띠는 것일 수 있다. 구체적으로, 연마입자는 표면 전하가 음전하를 띠는 것일 수 있다.According to one embodiment, the abrasive particles may have a negative charge. Specifically, the abrasive particles may have a negative surface charge.
일 실시예에 따르면, 연마입자의 직경은, 10 ㎚ 내지 200 ㎚일 수 있다. 일 실시예에 따르면, 연마입자의 직경은, 20 ㎚ 내지 200 ㎚일 수 있다. 상기 연마입자의 사이즈 범위 내에 포함되면 목적하는 연마율 확보와 사이즈 증가에 의한 과연마를 방지할 수 있다. 예를 들어, 연마입자는, 10 ㎚ 내지 200 ㎚인 단일 직경 입자이거나, 10 ㎚ 내지 200 ㎚의 2종 이상의 상이한 직경을 가지는 혼합 입자를 포함할 수 있다. 예를 들어, 연마입자는, 10 ㎚ 내지 100 ㎚ 직경의 제1 입자 및 10 ㎚ 내지 100 ㎚ 직경의 제2 입자를 포함하고, 제1 입자 대 제2 입자의 혼합비(질량비)는 1 : 0.1 내지 10 일 수 있다. 상기 직경은, 연마입자의 평균 직경을 의미할 수 있다. 예를 들어, 상기 연마입자의 직경은, XRD, SEM, TEM, BET 또는 동적광산란으로 측정될 수 있는 시야 범위 내에 복수의 입자의 직경의 평균값을 의미할 수 있다. 예를 들어, 상기 제1 입자는 합성 반응에서 초기에 형성된 입자로서 비-응집된 입자를 의미하고, 상기 복수의 제1 입자들이 서로 응집(aggregation)되어 제2 입자를 형성할 수 있다. 상기 제1 입자의 직경이 상기 범위 미만일 경우 연마율이 저하될 수 있고, 상기 범위를 초과할 경우 균일성이 저하될 수 있다. 또한, 상기 제2 입자 크기가 상기 범위 미만일 경우 연마율이 저하되거나 밀링으로 인하여 작은 입자가 발생하여 세정성이 저하되고 웨이퍼 표면에 과량의 결함이 발생할 수 있으며, 상기 범위를 초과할 경우 과잉 연마가 이루어져 디싱, 침식 및 표면 결함이 발생할 수 있다.According to one embodiment, the diameter of the abrasive particles may be 10 nm to 200 nm. According to one embodiment, the diameter of the abrasive particles may be 20 nm to 200 nm. If the abrasive particles are within the size range, the desired polishing rate can be secured and over-polishing due to size increase can be prevented. For example, the abrasive particles may be single diameter particles ranging from 10 nm to 200 nm, or may include mixed particles having two or more different diameters ranging from 10 nm to 200 nm. For example, the abrasive particles include first particles with a diameter of 10 nm to 100 nm and second particles with a diameter of 10 nm to 100 nm, and the mixing ratio (mass ratio) of the first particles to the second particles is 1:0.1 to 1:0.1. It could be 10. The diameter may mean the average diameter of the abrasive particles. For example, the diameter of the abrasive particles may mean the average value of the diameters of a plurality of particles within a viewing range that can be measured by XRD, SEM, TEM, BET, or dynamic light scattering. For example, the first particles are particles initially formed in a synthesis reaction and refer to non-agglomerated particles, and the plurality of first particles may aggregate with each other to form second particles. If the diameter of the first particle is less than the above range, the polishing rate may be reduced, and if it exceeds the above range, uniformity may be reduced. In addition, if the second particle size is less than the above range, the polishing rate may decrease or small particles may be generated due to milling, which may reduce cleanability and cause excessive defects on the wafer surface. If the second particle size exceeds the above range, excessive polishing may occur. This can result in dishing, erosion and surface defects.
일 실시예에 따르면, 연마입자는, 슬러리 조성물 중 0.01 중량% 내지 10 중량%일 수 있다. 또는, 연마입자는, 슬러리 조성물 중 0.1 중량% 내지 2 중량%일 수 있다. 상기 범위 내에 포함되면 연마 대상막(예를 들어, 다결정실리콘 막)에 따라 목적하는 연마율 구현 및/또는 연마율을 조절하여 목적하는 선택비의 구현이 가능하고, 연마입자의 함량 증가에 따른 연마 대상막(예를 들어, 다결정실리콘 막) 표면에 잔류하는 연마입자 수를 줄이고, 낮은 함량에 따른 연마 속도의 감소 및 과연마로 인한 패턴에서의 디싱 또는 이로젼 같은 2차 결함의 초래를 방지할 수 있다.According to one embodiment, the abrasive particles may be 0.01% to 10% by weight of the slurry composition. Alternatively, the abrasive particles may be 0.1% to 2% by weight of the slurry composition. If it is within the above range, it is possible to implement a desired polishing rate and/or adjust the polishing rate according to the polishing target film (e.g., polycrystalline silicon film) to achieve a desired selectivity, and polishing according to an increase in the content of abrasive particles. It can reduce the number of abrasive particles remaining on the surface of the target film (e.g., polycrystalline silicon film), reduce the polishing speed due to low content, and prevent secondary defects such as dishing or erosion in the pattern due to over-polishing. there is.
일 실시예에 따르면, pH 버퍼는, 유기산, 아민 또는 이 둘을 포함할 수 있다. 일 실시예에 따르면, pH 버퍼는, 연마 슬러리 조성물의 pH가 급변하지 않게 하기 위해 버퍼로서 이용가능할 수 있다. 일 실시예에 따르면, pH 버퍼는, 슬러리 조성물 중 0.01 중량% 내지 2 중량%일 수 있다. 또는, pH 버퍼는, 슬러리 조성물 중 0.1 중량% 내지 1 중량%일 수 있다.According to one embodiment, the pH buffer may include an organic acid, an amine, or both. According to one embodiment, a pH buffer may be used as a buffer to prevent the pH of the polishing slurry composition from rapidly changing. According to one embodiment, the pH buffer may be 0.01% to 2% by weight of the slurry composition. Alternatively, the pH buffer may be 0.1% to 1% by weight of the slurry composition.
일 실시예에 따르면, 유기산은, 시트르산(citric acid), 옥살산(oxalic acid), 프로피온산(propionic acid), 스테아린산(stearic acid), 피루브산(pyruvic acid), 피콜린산(Picolinic acid), 아세트산(acetic acid), 아세토아세트산(acetoacetic acid), 글리옥실산(glyoxylic acid), 말산(malic acid), 말론산(malonic acid), 디메틸말론산(dimethyl malonic acid), 말레산(maleic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 2-메틸아디프산(2-methyl adipic acid), 트리메틸아디프산(trimethyl adipic acid), 피메린산(pimelic acid), 프탈산(phthalic acid), 트리멜리트산(trimellitic acid), 타르타르산(tartaric acid), 글리콜산(glycollic acid), 2,2-디메틸글루타르산(2,2-dimethyl glutaric acid), 락트산(lactic acid), 글루타르산(glutaric acid), 뷰티르산(butyric acid), 숙신산(succinic acid), 3,3-디에틸 숙신산(3,3-diethyl succinic acid) 및 아스코르빈산(ascorbic acid)으로 이루어진 군에서 선택되는 적어도 하나를 포함할 수 있다. 일 실시예에 따르면, 바람직하게는, 유기산으로서 시트르산을 이용할 수 있다.According to one embodiment, the organic acids include citric acid, oxalic acid, propionic acid, stearic acid, pyruvic acid, picolinic acid, and acetic acid. acid, acetoacetic acid, glyoxylic acid, malic acid, malonic acid, dimethyl malonic acid, maleic acid, glutaric acid (glutaric acid), adipic acid, 2-methyl adipic acid, trimethyl adipic acid, pimelic acid, phthalic acid , trimellitic acid, tartaric acid, glycolic acid, 2,2-dimethyl glutaric acid, lactic acid, glutaric acid ( At least one selected from the group consisting of glutaric acid, butyric acid, succinic acid, 3,3-diethyl succinic acid, and ascorbic acid It can be included. According to one embodiment, citric acid may be preferably used as the organic acid.
일 실시예에 따르면, 아민은, 모노에탄올아민(monoethanolamine), 다이에탄올아민(diethanolamine), 트리에탄올아민(triethanolamine), N-메틸디에탄올아민(N-methyldiethanolamine), N-프로필디에탄올아민(N-propyldiethanolamine), N-이소프로필디에탄올아민(N-isopropyldiethanolamine), N-(2-메틸프로필)디에탄올아민(N-(2-methylpropyl)diethanolamine), N-n-부틸디에탄올아민(N-n-butyldiethanolamine), N-t-부틸에탄올아민(N-t-butylethanolamine), N-사이클로헥실디에탄올아민(N-cyclohexyldiehtnaolamine), N,N-비스(2-하이드록시프로필)에탄올아민(N,N-bis(2-hydroxypropyl)ethanolamine) 및 트리아이소프로판올아민(triisopropanolamine)으로 이루어진 군에서 선택되는 적어도 하나를 포함할 수 있다. 일 실시예에 따르면, 바람직하게는, 아민으로서 트리에탄올아민을 이용할 수 있다.According to one embodiment, the amine is monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-propyldiethanolamine (N- propyldiethanolamine), N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine, N-t-butylethanolamine, N-cyclohexyldiethanolamine, N,N-bis(2-hydroxypropyl)ethanolamine ) and triisopropanolamine. According to one embodiment, triethanolamine may be preferably used as the amine.
일 실시예에 따르면, 아미노산은, 글리신(glycine), 프롤린(proline), 히스티딘(Histidine), 리신(Lysine) 및 아르기닌(arginine)으로 이루어진 군에서 선택되는 적어도 하나를 포함할 수 있다. 일 실시예에 따르면, 아미노산은 리세스 비(recess ratio, RR)를 향상시키기 위해 슬러리 조성물에 첨가될 수 있다. 일 실시예에 따르면, 아미노산은, 슬러리 조성물 중 0.01 중량% 내지 3 중량%일 수 있다. 또한, 아미노산은, 슬러리 조성물 중 0.1 중량% 내지 1 중량%일 수 있다.According to one embodiment, the amino acid may include at least one selected from the group consisting of glycine, proline, histidine, lysine, and arginine. According to one embodiment, amino acids may be added to the slurry composition to improve the recess ratio (RR). According to one embodiment, the amino acid may be 0.01% to 3% by weight in the slurry composition. Additionally, the amino acid may be 0.1% to 1% by weight in the slurry composition.
일 실시예에 따르면, 슬러리 조성물은, 비이온성 고분자를 포함할 수 있다. 비이온성 고분자는, 젖음제(wetting agent)로서 웨이퍼 식각 후 표면 결함 개수를 대폭 감소시킬 수 있다. 일 실시예에 따르면, 비이온성 고분자는, 2-하이드록시에틸 셀룰로오스(2-hydroxyethyl cellulose), 하이드록시메틸 셀룰로오스(HMC), 하이드록시프로필 셀룰로오즈(HPC), 하이드록시프로필 메틸 셀룰로오즈(HPMC), 카르복시메틸 셀룰로오스(CMC), 메틸셀룰로오스(MC), 메틸하이드록시에틸 셀룰로오스(MHEC), 옥사졸린기 함유 폴리머, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 폴리옥시알킬렌알킬에테르, 폴리옥시알킬렌알킬에스테르, 폴리옥시에틸렌메틸에테르, 폴리에틸렌글리콜술포닉산, 폴리비닐알코올, 폴리에틸렌옥사이드, 폴리프로필렌옥사이드, 폴리알킬옥사이드, 폴리옥시에틸렌옥사이드, 폴리에틸렌옥사이드-프로필렌옥사이드 공중합체, 셀룰로오스, 메틸히드록시프로필셀룰로오스, 카르복시메틸셀룰로오스, 카르복시메틸히드록시에틸셀룰로오스, 설포에틸셀룰로오스, 카르복시메틸설포에틸셀룰로오스, 키토산, 젤라틴, 잔탄검, 콜라겐, 카라기난, 플루란, 펙틴, 콘드로이틴 설페이트, 알긴산, 덱스트란, 베타 글루칸 및 히아루론산으로 이루어진 군에서 선택되는 적어도 하나를 포함할 수 있다.According to one embodiment, the slurry composition may include a nonionic polymer. Nonionic polymers, as wetting agents, can significantly reduce the number of surface defects after wafer etching. According to one embodiment, the nonionic polymer is 2-hydroxyethyl cellulose, hydroxymethyl cellulose (HMC), hydroxypropyl cellulose (HPC), hydroxypropyl methyl cellulose (HPMC), carboxylic acid Methyl cellulose (CMC), methyl cellulose (MC), methyl hydroxyethyl cellulose (MHEC), oxazoline group-containing polymer, polyethylene glycol, polypropylene glycol, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl ester, polyoxy Ethylene methyl ether, polyethylene glycol sulphonic acid, polyvinyl alcohol, polyethylene oxide, polypropylene oxide, polyalkyl oxide, polyoxyethylene oxide, polyethylene oxide-propylene oxide copolymer, cellulose, methylhydroxypropylcellulose, carboxymethylcellulose, carboxylic acid. selected from the group consisting of methylhydroxyethylcellulose, sulfoethylcellulose, carboxymethylsulfoethylcellulose, chitosan, gelatin, xanthan gum, collagen, carrageenan, pullulan, pectin, chondroitin sulfate, alginic acid, dextran, beta glucan and hyaluronic acid. It can contain at least one.
일 실시예에 따르면, 비이온성 고분자는, 슬러리 조성물 중 0.001 중량% 내지 0.1 중량%일 수 있다. 또한, 비이온성 고분자는, 슬러리 조성물 중 0.01 중량% 내지 0.05 중량%일 수 있다.According to one embodiment, the nonionic polymer may be 0.001% by weight to 0.1% by weight in the slurry composition. Additionally, the nonionic polymer may be 0.01% to 0.05% by weight in the slurry composition.
일 실시예에 따르면, 슬러리 조성물은, pH 조절제;를 더 포함할 수 있다. 일 실시예에 따르면, pH 조절제는, 수산화 칼륨, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산, 과염소산, 트리에탄올아민, 트리메탄올아민, 모노에탄올아민, 디에탄올아민, 디메틸벤질아민, 에톡시벤질아민, 2-아미노-2-메틸-1-프로판올, 2-아미노-2-에틸-1,3-프로판디올, 트리스(히드록시메틸)아미노메탄, 2-아미노-1-부탄올, 2-아미노-2-메틸-1,3-프로판디올, 디메틸아미노메틸프로판올, 디에틸아미노에탄올, 모노이소프로판올아민, 아미노에틸에탄올아민, 3-아미노-1-프로판올, 2-아미노-1-프로판올, 1-아미노-2-프로판올, 1-아미노-펜탄올, 2-(2-아미노에틸아미노)에탄올, 2-디메틸아미노-2-메틸-1-프로판올, N,N-디에틸에탄올아민, 암모니아, 암모늄메틸프로판올(Ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(Tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸, 모노에탄올아민(Monoethanolamine, MEA), 다이에탄올아민(Diethanol amine, DEA), 트리에탄올아민(TEA), 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에탄올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민, 테트라에틸암모늄하이드록사이드(Tetraethyl ammonium hydroxide, TEAH), 테트라프로필암모늄하이드록사이드(Tetrapropylammonium hydroxide, TPAH), 테트라부틸암모늄하이드록사이드(Tetrabutylammonium hydroxide), 테트라펜틸암모늄(Tetrapentylammonium hydroxide, TBAH), 메틸(트리하이드록시에틸)암모늄하이드록사이드(Methyl(trishydroxyethyl)ammonium hydroxide), 트리부틸에틸암모늄하이드록사이드(Tributylethylammonium hydroxide), (2-하이드록시에틸)트리에틸암모늄하이드록사이드((2-hydroxyethyl),triethylammonium hydroxide), (2-하이드록시에틸)트리프로필암모늄하이드록사이드((2-hydroxyethyl) tripropylammonium hydroxide) 및 (1-하이드록시프로필)트리에틸암모늄하이드록사이드((1-hydroxypropyl) trimethylammonium hydroxide)로 이루어진 군에서 선택되는 적어도 하나를 포함할 수 있다.According to one embodiment, the slurry composition may further include a pH adjuster. According to one embodiment, the pH adjuster is potassium hydroxide, sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrobromic acid, iodic acid, hydrochloric acid, perchloric acid, triethanolamine, trimethanolamine, monoethanolamine, diethanolamine, Dimethylbenzylamine, ethoxybenzylamine, 2-amino-2-methyl-1-propanol, 2-amino-2-ethyl-1,3-propanediol, tris(hydroxymethyl)aminomethane, 2-amino-1 -Butanol, 2-amino-2-methyl-1,3-propanediol, dimethylaminomethylpropanol, diethylaminoethanol, monoisopropanolamine, aminoethylethanolamine, 3-amino-1-propanol, 2-amino-1 -Propanol, 1-amino-2-propanol, 1-amino-pentanol, 2-(2-aminoethylamino)ethanol, 2-dimethylamino-2-methyl-1-propanol, N,N-diethylethanolamine , Ammonia, Ammonium methyl propanol (AMP), Tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate. , sodium carbonate, imidazole, monoethanolamine (MEA), diethanol amine (DEA), triethanolamine (TEA), 1,5-diamino-3-pentanol, 2-dimethylamino-2- Methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol , 2-dimethylamino-1-propanol, 2-diethylamino-1-propanol, 2-(2-aminoethylamino)ethanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine , N-t-butylethanolamine, N-cyclohexyldiethanolamine, 2-(dimethylamino)ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylamino Ethanol, 2-cycloaminoethanol, 2-amino-2-pentanol, 2-[bis(2-hydroxyethyl)amino]-2-methyl-1-propanol, 2-[bis(2-hydroxyethyl) Amino]-2-propanol, N,N-bis(2-hydroxypropyl)ethanolamine, 2-amino-2-methyl-1-propanol, tris(hydroxymethyl)aminomethane, triisopropanolamine, tetraethylammonium Hydroxide (Tetraethyl ammonium hydroxide, TEAH), Tetrapropylammonium hydroxide (TPAH), Tetrabutylammonium hydroxide, Tetrapentylammonium hydroxide (TBAH), Methyl (trihydroxy Methyl(trishydroxyethyl)ammonium hydroxide, Tributylethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide , (2-hydroxyethyl) tripropylammonium hydroxide and (1-hydroxypropyl) triethylammonium hydroxide. It may include at least one selected.
일 실시예에 따르면, pH 조절제는, 슬러리 조성물 중 0.0001 중량% 내지 3 중량%일 수 있다.According to one embodiment, the pH adjuster may be 0.0001% to 3% by weight of the slurry composition.
일 실시예에 따르면, 슬러리 조성물은, pH가 8.0 내지 12.0일 수 있다. 바람직하게는, 슬러리 조성물의 pH가 10.0 내지 12.0일 수 있다. 연마 슬러리 조성물은, pH가 상기 범위 내에 있는 것이 중요할 수 있는데, 상기 pH 범위를 초과하는 경우 높은 염기성 영역을 형성하고, 연마 후 반도체 재료의 탈락이 크게 발생할 수 있어 연마 대상 기재(예를 들어, 웨이퍼)의 표면의 거칠기(roughness)가 일정하지 않고, 디싱, 침식, 부식 및 표면 불균형과 같은 결함을 발생시킬 수 있다.According to one embodiment, the slurry composition may have a pH of 8.0 to 12.0. Preferably, the pH of the slurry composition may be 10.0 to 12.0. For the polishing slurry composition, it may be important for the pH to be within the above range. If the pH exceeds the above range, a highly basic region may be formed, and significant separation of the semiconductor material may occur after polishing, so that the substrate to be polished (e.g., The roughness of the surface of the wafer is not constant and may cause defects such as dishing, erosion, corrosion, and surface imbalance.
일 실시예에 따르면, 연마 슬러리 조성물은, 다결정실리콘(poly-silicon) 막을 포함하는 기재의 연마에 적용되고, 예를 들어, 다결정실리콘 막을 포함하는 기재의 화학적-기계적 연마 공정(CMP)에 적용될 수 있다.According to one embodiment, the polishing slurry composition can be applied to polishing a substrate comprising a poly-silicon film, for example, in a chemical-mechanical polishing process (CMP) of a substrate comprising a poly-silicon film. there is.
일 실시예에 따르면, 연마 슬러리 조성물은, 음의 제타전위를 가지고, 예를 들어, -10 mV 내지 -50 mV의 제타전위를 가질 수 있다. 연마 슬러리 조성물이 상기 제타전위 범위 내에 포함되면, 소수성의 다결정실리콘 막의 연마속도를 향상시킬 수 있다.According to one embodiment, the polishing slurry composition may have a negative zeta potential, for example, a zeta potential of -10 mV to -50 mV. If the polishing slurry composition is within the zeta potential range, the polishing rate of the hydrophobic polycrystalline silicon film can be improved.
일 실시예에 따르면, 다결정실리콘 막을 포함하는 기재에 상기 연마 슬러리 조성물로 연마 공정을 진행하는 경우, 다결정실리콘 막에 대한 연마속도가 2,000 Å/min 이상, 또는 3,000 Å/min 이상, 또는 4,000 Å/min 이상일 수 있다. 또한, 상기 연마 슬러리 조성물로 연마 공정을 진행하는 경우, 다결정실리콘 막에 대한 연마속도는 5,000 Å/min 이하, 또는 4,000 Å/min 이하, 또는 3,000 Å/min 이하일 수 있다.According to one embodiment, when a polishing process is performed on a substrate including a polycrystalline silicon film with the polishing slurry composition, the polishing rate for the polycrystalline silicon film is 2,000 Å/min or more, or 3,000 Å/min or more, or 4,000 Å/min. It can be more than min. Additionally, when a polishing process is performed using the polishing slurry composition, the polishing rate for the polycrystalline silicon film may be 5,000 Å/min or less, or 4,000 Å/min or less, or 3,000 Å/min or less.
이하, 실시예 및 비교예에 의하여 본 발명을 더욱 상세히 설명하고자 한다.Hereinafter, the present invention will be described in more detail through examples and comparative examples.
단, 하기 실시예는 본 발명을 예시하기 위한 것일 뿐, 본 발명의 내용이 하기 실시예에 한정되는 것은 아니다.However, the following examples are only for illustrating the present invention, and the content of the present invention is not limited to the following examples.
실시예 1Example 1
하기의 표 1에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90㎚)('A'로 약칭)와 pH 조절제로 질산 또는 수산화 칼륨을 0.001 중량% 내지 0.1 중량%를pH가 11이 될 때까지 초순수 내에서 혼합하였다. According to Table 1 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') having an anionic surface charge and 0.001% to 0.1% by weight of nitric acid or potassium hydroxide as a pH adjuster are used to obtain a pH of 11. Mixed in ultrapure water until dissolved.
비교예 1Comparative Example 1
하기의 표 1에 따라 음이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('B'로 약칭)와 pH 조절제로 질산 또는 수산화 칼륨을 0.001 중량% 내지 0.1 중량%를pH가 11이 될 때까지 초순수 내에서 혼합하였다.According to Table 1 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'B') having an anionic surface charge and 0.001% to 0.1% by weight of nitric acid or potassium hydroxide as a pH adjuster until the pH is 11. Mixed in ultrapure water until.
비교예 2Comparative Example 2
하기의 표 1에 따라 음이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('B'로 약칭)와 pH 조절제로 질산 또는 수산화 칼륨을 0.001 중량% 내지 0.1 중량%를pH가 11이 될 때까지 초순수 내에서 혼합하였다.According to Table 1 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'B') having an anionic surface charge and 0.001% to 0.1% by weight of nitric acid or potassium hydroxide as a pH adjuster until the pH is 11. Mixed in ultrapure water until.
세정 특성 평가Evaluation of cleaning properties
실시예 1 및 비교예 1 내지 2의 분산액을 이용하여 하기와 같은 연마 조건으로 폴리실리콘 막 함유 기판을 연마한 이후 클리닝(HF 및 SC-1 (Standard Clean-1))을 진행하였다. Using the dispersions of Example 1 and Comparative Examples 1 and 2, the polysilicon film-containing substrate was polished under the following polishing conditions and then cleaned (HF and SC-1 (Standard Clean- 1) ).
[연마 조건][Polishing conditions]
(1) 연마장비: NT, SP-03(KCT 社)(1) Polishing equipment: NT, SP-03 (KCT company)
(2) Carrier rpm : 101(2) Carrier rpm: 101
(3) Platen rpm : 103(3) Platen rpm: 103
(4) Wafer pressure : 3.0 psi(4) Wafer pressure: 3.0 psi
(5) R-ring pressure : 6.0 psi(5) R-ring pressure: 6.0 psi
(6) Slurry flow rate : 250 mL/min(6) Slurry flow rate: 250 mL/min
(7) 연마패드 : IC 1000(7) Polishing pad: IC 1000
폴리 실리콘 웨이퍼 기판 연마 후 및 클리닝(HF 및 SC-1 (Standard Clean-1)) 이후의 잔류 입자 개수를 카운트하여, 그 결과를 하기의 표 1 내지 표 2에 나타내었다.The number of residual particles after polishing and cleaning (HF and SC-1 (Standard Clean- 1) ) of the polysilicon wafer substrate was counted, and the results are shown in Tables 1 and 2 below.
입자 개수(ea)POST CLN
Number of particles (ea)
(wt%)content
(wt%)
표 1 및 표 2는 pH 11에 분산된 입자 관련 CMP 이후 잔류 입자 개수 및 클리닝 이후 잔류 입자 개수를 비교한 것이다. 표 2는 표면에 잔류하는 입자의 이미지를 나타낸 것이다. 표 1 및 표 2에서 본 발명에 의한 폴리스타이렌 입자의 CMP적용 이후에 세정 공정으로 무기입자에 비하여 클리닝이 잘 이루어지는 것을 확인할 수 있다. Tables 1 and 2 compare the number of residual particles after CMP and the number of residual particles after cleaning related to particles dispersed at pH 11. Table 2 shows images of particles remaining on the surface. From Tables 1 and 2, it can be seen that the polystyrene particles according to the present invention are cleaned better than inorganic particles through a cleaning process after CMP application.
실시예 2Example 2
하기의 표 1에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90㎚)('A'로 약칭)와 pH 버퍼로서 시트르산(citric acid), 아미노산으로서 글리신(glycine) 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스(2-hydroxyethyl cellulose)를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 1 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') having an anionic surface charge, citric acid as a pH buffer, glycine as an amino acid, and nonionic polymer. A polishing slurry composition was prepared by mixing 2-hydroxyethyl cellulose until the pH reached 11.
실시예 3Example 3
하기의 표 3에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90㎚)('A'로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 글리신(glycine) 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스(2-hydroxyethyl cellulose)를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') having an anionic surface charge, triethanolamine as a pH buffer, glycine as an amino acid, and 2-hyde as a nonionic polymer. A polishing slurry composition was prepared by mixing 2-hydroxyethyl cellulose until the pH reached 11.
실시예 4Example 4
하기의 표 3에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90 ㎚)(‘A’로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 프롤린(proline) 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') with an anionic surface charge, triethanolamine as a pH buffer, proline as an amino acid, and 2-hyde as a nonionic polymer. A polishing slurry composition was prepared by mixing oxyethyl cellulose until the pH reached 11.
실시예 5Example 5
하기의 표 3에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90 ㎚)('A'로 약칭)와 pH 버퍼로서 트리에탄올아민 및 아미노산으로서 프롤린(proline)를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') with anionic surface charge, triethanolamine as a pH buffer, and proline as an amino acid were added until the pH reached 11. A polishing slurry composition was prepared by mixing.
실시예 6Example 6
하기의 표 3에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90 ㎚)('A'로 약칭)와 pH 버퍼로서 트리에탄올아민 및 아미노산으로서 프롤린을 pH가 10이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') with anionic surface charge are mixed and polished with triethanolamine as a pH buffer and proline as an amino acid until the pH is 10. A slurry composition was prepared.
실시예 7Example 7
하기의 표 3에 따라 음이온성 표면 전하를 갖는 폴리스타이렌 입자(직경 80 ㎚ 내지 90 ㎚)('A'로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 프롤린 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스를 pH가 9가 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, polystyrene particles (diameter 80 nm to 90 nm) (abbreviated as 'A') with an anionic surface charge, triethanolamine as a pH buffer, proline as an amino acid, and 2-hydroxyethyl cellulose as a nonionic polymer. A polishing slurry composition was prepared by mixing until the pH reached 9.
실시예 8Example 8
하기의 표 3에 따라 음이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('B'로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 아르기니 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 3 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'B') having an anionic surface charge, triethanolamine as a pH buffer, arginine as an amino acid, and 2-hydroxyethyl cellulose as a nonionic polymer. A polishing slurry composition was prepared by mixing until the pH reached 11.
비교예 3Comparative Example 3
하기의 표 1에 따라 음이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('B'로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 프롤린 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 1 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'B') having an anionic surface charge, triethanolamine as a pH buffer, proline as an amino acid, and 2-hydroxyethyl cellulose as a nonionic polymer. A polishing slurry composition was prepared by mixing until the pH reached 11.
비교예 4Comparative Example 4
하기의 표 1에 따라 양이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('C'로 약칭)와 pH 버퍼로서 트리에탄올아민, 아미노산으로서 프롤린 및 비이온성 고분자로서 2-하이드록시에틸 셀룰로오스를 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 1 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'C') having a cationic surface charge, triethanolamine as a pH buffer, proline as an amino acid, and 2-hydroxyethyl cellulose as a nonionic polymer. A polishing slurry composition was prepared by mixing until the pH reached 11.
비교예 5Comparative Example 5
하기의 표 1에 따라 양이온성 표면 전하를 갖는 콜로이달 실리카(Fuso Chemical 社 제조)('C'로 약칭)와 pH 버퍼로서 트리에탄올아민 및 아미노산으로서 프롤린을 pH가 11이 될 때까지 혼합하여 연마 슬러리 조성물을 제조하였다.According to Table 1 below, colloidal silica (manufactured by Fuso Chemical) (abbreviated as 'C') having a cationic surface charge, triethanolamine as a pH buffer, and proline as an amino acid were mixed until the pH reached 11 to create a polishing slurry. A composition was prepared.
각 실시예 및 비교예의 연마 슬러리 조성물의 pH를 조절하기 위해 pH 조절제로 질산 또는 수산화 칼륨을 0.001 중량% 내지 0.1 중량%로 첨가할 수 있다. To adjust the pH of the polishing slurry composition of each Example and Comparative Example, nitric acid or potassium hydroxide may be added as a pH adjuster in an amount of 0.001% by weight to 0.1% by weight.
연마 특성 평가Evaluation of polishing properties
실시예 2 내지 8 및 비교예 3 내지 4의 연마 슬러리 조성물을 이용하여 하기와 같은 연마 조건으로 폴리실리콘 막 함유 기판을 연마하였다.A polysilicon film-containing substrate was polished using the polishing slurry compositions of Examples 2 to 8 and Comparative Examples 3 to 4 under the following polishing conditions.
[연마 조건][Polishing conditions]
(1) 연마장비: NT, SP-03(KCT 社)(1) Polishing equipment: NT, SP-03 (KCT company)
(2) Carrier rpm : 101(2) Carrier rpm: 101
(3) Platen rpm : 103(3) Platen rpm: 103
(4) Wafer pressure : 3.0 psi(4) Wafer pressure: 3.0 psi
(5) R-ring pressure : 6.0 psi(5) R-ring pressure: 6.0 psi
(6) Slurry flow rate : 250 mL/min(6) Slurry flow rate: 250 mL/min
(7) 연마패드 : IC 1000(7) Polishing pad: IC 1000
연마 특성을 평가하기 위하여, 실시예 및 비교예에 따른 연마 슬러리 조성물을 이용하여 폴리 실리콘 웨이퍼 기판 연마 후 연마량 및 클리닝 이후의 표면 결함의 개수를 카운트하여, 그 결과를 하기의 표 3 내지 표 4에 나타내었다.In order to evaluate the polishing properties, the amount of polishing and the number of surface defects after cleaning were counted after polishing the polysilicon wafer substrate using the polishing slurry composition according to the examples and comparative examples, and the results are shown in Tables 3 to 4 below. shown in
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(Å/min)Poly-Si polishing amount
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상기 표 3 및 표 4를 살펴보면, 폴리스타이렌 연마입자를 첨가한 연마 슬러리 조성물은, 비교예의 슬러리 조성물과 달리 클리닝 이후의 표면 결함 개수가 확연히 줄어드는 것을 확인할 수 있다. 또한, 비교예의 슬러리 조성물과 비교하여 실시예의 연마 슬러리 조성물은, 상대적으로 다결정 실리콘 막에 대한 높은 연마율을 구현할 수 있음을 확인할 수 있다.Looking at Tables 3 and 4, it can be seen that the number of surface defects after cleaning is significantly reduced in the polishing slurry composition containing polystyrene abrasive particles, unlike the slurry composition in the comparative example. In addition, it can be confirmed that compared to the slurry composition of the comparative example, the polishing slurry composition of the example can achieve a relatively high polishing rate for a polycrystalline silicon film.
이상과 같이 실시예들이 설명되었으나, 해당 기술분야에서 통상의 지식을 가진 자라면 상기를 기초로 다양한 기술적 수정 및 변형을 적용할 수 있다. 예를 들어, 설명된 기술들이 설명된 방법과 다른 순서로 수행되거나, 및/또는 설명된 시스템, 구조, 장치, 회로 등의 구성요소들이 설명된 방법과 다른 형태로 결합 또는 조합되거나, 다른 구성요소 또는 균등물에 의하여 대치되거나 치환되더라도 적절한 결과가 달성될 수 있다.Although the embodiments have been described as above, those skilled in the art can apply various technical modifications and variations based on the above. For example, the described techniques are performed in a different order than the described method, and/or components of the described system, structure, device, circuit, etc. are combined or combined in a different form than the described method, or other components are used. Alternatively, appropriate results may be achieved even if substituted or substituted by an equivalent.
그러므로, 다른 구현들, 다른 실시예들 및 특허청구범위와 균등한 것들도 후술하는 청구범위의 범위에 속한다.Therefore, other implementations, other embodiments, and equivalents of the claims also fall within the scope of the following claims.
Claims (15)
pH 버퍼;
아미노산; 및
비이온성 고분자;를 포함하는,
실리콘 웨이퍼 연마용 슬러리 조성물.
Organic abrasive particles containing organic polymers;
pH buffer;
amino acid; and
Nonionic polymer; including,
Slurry composition for silicon wafer polishing.
상기 연마입자는, 음전하를 띠는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The abrasive particles are negatively charged,
Slurry composition for silicon wafer polishing.
상기 연마입자의 직경은, 10 ㎚ 내지 200 ㎚인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The diameter of the abrasive particles is 10 nm to 200 nm,
Slurry composition for silicon wafer polishing.
상기 연마입자는, 상기 슬러리 조성물 중 0.01 중량% 내지 10 중량%인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The abrasive particles are 0.01% to 10% by weight of the slurry composition,
Slurry composition for silicon wafer polishing.
상기 연마입자는, 폴리스타이렌, 폴리메틸메타크릴레이트 및 폴리비닐아세테이트로 이루어진 군에서 선택된 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The abrasive particles include at least one selected from the group consisting of polystyrene, polymethyl methacrylate, and polyvinyl acetate.
Slurry composition for silicon wafer polishing.
상기 pH 버퍼는, 유기산, 아민 또는 이 둘을 포함하고,
상기 pH 버퍼는, 상기 슬러리 조성물 중 0.01 중량% 내지 2 중량%인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The pH buffer contains an organic acid, an amine, or both,
The pH buffer is 0.01% to 2% by weight of the slurry composition,
Slurry composition for silicon wafer polishing.
상기 유기산은, 시트르산(citric acid), 옥살산(oxalic acid), 프로피온산(propionic acid), 스테아린산(stearic acid), 피루브산(pyruvic acid), 피콜린산(Picolinic acid), 아세트산(acetic acid), 아세토아세트산(acetoacetic acid), 글리옥실산(glyoxylic acid), 말산(malic acid), 말론산(malonic acid), 디메틸말론산(dimethyl malonic acid), 말레산(maleic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 2-메틸아디프산(2-methyl adipic acid), 트리메틸아디프산(trimethyl adipic acid), 피메린산(pimelic acid), 프탈산(phthalic acid), 트리멜리트산(trimellitic acid), 타르타르산(tartaric acid), 글리콜산(glycollic acid), 2,2-디메틸글루타르산(2,2-dimethyl glutaric acid), 락트산(lactic acid), 글루타르산(glutaric acid), 뷰티르산(butyric acid), 숙신산(succinic acid), 3,3-디에틸 숙신산(3,3-diethyl succinic acid) 및 아스코르빈산(ascorbic acid)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to clause 6,
The organic acids include citric acid, oxalic acid, propionic acid, stearic acid, pyruvic acid, picolinic acid, acetic acid, and acetoacetic acid. (acetoacetic acid), glyoxylic acid, malic acid, malonic acid, dimethyl malonic acid, maleic acid, glutaric acid, Adipic acid, 2-methyl adipic acid, trimethyl adipic acid, pimelic acid, phthalic acid, trimellitic acid ( trimellitic acid, tartaric acid, glycolic acid, 2,2-dimethyl glutaric acid, lactic acid, glutaric acid, beauty Containing at least one selected from the group consisting of butyric acid, succinic acid, 3,3-diethyl succinic acid, and ascorbic acid,
Slurry composition for silicon wafer polishing.
상기 아민은, 모노에탄올아민(monoethanolamine), 다이에탄올아민(diethanolamine), 트리에탄올아민(triethanolamine), N-메틸디에탄올아민(N-methyldiethanolamine), N-프로필디에탄올아민(N-propyldiethanolamine), N-이소프로필디에탄올아민(N-isopropyldiethanolamine), N-(2-메틸프로필)디에탄올아민(N-(2-methylpropyl)diethanolamine), N-n-부틸디에탄올아민(N-n-butyldiethanolamine), N-t-부틸에탄올아민(N-t-butylethanolamine), N-사이클로헥실디에탄올아민(N-cyclohexyldiehtnaolamine), N,N-비스(2-하이드록시프로필)에탄올아민(N,N-bis(2-hydroxypropyl)ethanolamine) 및 트리아이소프로판올아민(triisopropanolamine)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to clause 6,
The amines include monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-propyldiethanolamine, N- Isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, Nn-butyldiethanolamine, Nt-butylethanolamine (Nt-butylethanolamine), N-cyclohexyldiehtnaolamine, N,N-bis(2-hydroxypropyl)ethanolamine and triisopropanolamine (triisopropanolamine), which contains at least one selected from the group consisting of
Slurry composition for silicon wafer polishing.
상기 아미노산은, 글리신(glycine), 프롤린(proline), 히스티딘(Histidine), 리신(Lysine) 및 아르기닌(arginine)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The amino acid includes at least one selected from the group consisting of glycine, proline, histidine, lysine, and arginine,
Slurry composition for silicon wafer polishing.
상기 아미노산은, 상기 슬러리 조성물 중 0.01 중량% 내지 3 중량%인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The amino acid is 0.01% to 3% by weight of the slurry composition,
Slurry composition for silicon wafer polishing.
상기 비이온성 고분자는, 2-하이드록시에틸 셀룰로오스(2-hydroxyethyl cellulose), 하이드록시메틸 셀룰로오스(HMC), 하이드록시프로필 셀룰로오즈(HPC), 하이드록시프로필 메틸 셀룰로오즈(HPMC), 카르복시메틸 셀룰로오스(CMC), 메틸셀룰로오스(MC), 메틸하이드록시에틸 셀룰로오스(MHEC), 옥사졸린기 함유 폴리머, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 폴리옥시알킬렌알킬에테르, 폴리옥시알킬렌알킬에스테르, 폴리옥시에틸렌메틸에테르, 폴리에틸렌글리콜술포닉산, 폴리비닐알코올, 폴리에틸렌옥사이드, 폴리프로필렌옥사이드, 폴리알킬옥사이드, 폴리옥시에틸렌옥사이드, 폴리에틸렌옥사이드-프로필렌옥사이드 공중합체, 셀룰로오스, 메틸히드록시프로필셀룰로오스, 카르복시메틸셀룰로오스, 카르복시메틸히드록시에틸셀룰로오스, 설포에틸셀룰로오스, 카르복시메틸설포에틸셀룰로오스, 키토산, 젤라틴, 잔탄검, 콜라겐, 카라기난, 플루란, 펙틴, 콘드로이틴 설페이트, 알긴산, 덱스트란, 베타 글루칸 및 히아루론산으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The nonionic polymer is 2-hydroxyethyl cellulose (2-hydroxyethyl cellulose), hydroxymethyl cellulose (HMC), hydroxypropyl cellulose (HPC), hydroxypropyl methyl cellulose (HPMC), carboxymethyl cellulose (CMC) , methyl cellulose (MC), methyl hydroxyethyl cellulose (MHEC), oxazoline group-containing polymer, polyethylene glycol, polypropylene glycol, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl ester, polyoxyethylene methyl ether, polyethylene. Glycolsulfonic acid, polyvinyl alcohol, polyethylene oxide, polypropylene oxide, polyalkyl oxide, polyoxyethylene oxide, polyethylene oxide-propylene oxide copolymer, cellulose, methylhydroxypropylcellulose, carboxymethylcellulose, carboxymethylhydroxyethylcellulose , sulfoethylcellulose, carboxymethylsulfoethylcellulose, chitosan, gelatin, xanthan gum, collagen, carrageenan, pullulan, pectin, chondroitin sulfate, alginic acid, dextran, beta glucan, and hyaluronic acid. thing,
Slurry composition for silicon wafer polishing.
상기 비이온성 고분자는, 상기 슬러리 조성물 중 0.001 중량% 내지 0.1 중량%인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The nonionic polymer is 0.001% by weight to 0.1% by weight in the slurry composition,
Slurry composition for silicon wafer polishing.
상기 슬러리 조성물은, pH 조절제를 더 포함하고,
상기 pH 조절제는, 수산화 칼륨, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산, 과염소산, 트리에탄올아민, 트리메탄올아민, 모노에탄올아민, 디에탄올아민, 디메틸벤질아민, 에톡시벤질아민, 2-아미노-2-메틸-1-프로판올, 2-아미노-2-에틸-1,3-프로판디올, 트리스(히드록시메틸)아미노메탄, 2-아미노-1-부탄올, 2-아미노-2-메틸-1,3-프로판디올, 디메틸아미노메틸프로판올, 디에틸아미노에탄올, 모노이소프로판올아민, 아미노에틸에탄올아민, 3-아미노-1-프로판올, 2-아미노-1-프로판올, 1-아미노-2-프로판올, 1-아미노-펜탄올, 2-(2-아미노에틸아미노)에탄올, 2-디메틸아미노-2-메틸-1-프로판올, N,N-디에틸에탄올아민, 암모니아, 암모늄메틸프로판올(Ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(Tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸, 모노에탄올아민(Monoethanolamine, MEA), 다이에탄올아민(Diethanol amine, DEA), 트리에탄올아민(TEA), 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에탄올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민, 테트라에틸암모늄하이드록사이드(Tetraethyl ammonium hydroxide, TEAH), 테트라프로필암모늄하이드록사이드(Tetrapropylammonium hydroxide, TPAH), 테트라부틸암모늄하이드록사이드(Tetrabutylammonium hydroxide), 테트라펜틸암모늄(Tetrapentylammonium hydroxide, TBAH), 메틸(트리하이드록시에틸)암모늄하이드록사이드(Methyl(trishydroxyethyl)ammonium hydroxide), 트리부틸에틸암모늄하이드록사이드(Tributylethylammonium hydroxide), (2-하이드록시에틸)트리에틸암모늄하이드록사이드((2-hydroxyethyl),triethylammonium hydroxide), (2-하이드록시에틸)트리프로필암모늄하이드록사이드((2-hydroxyethyl) tripropylammonium hydroxide) 및 (1-하이드록시프로필)트리에틸암모늄하이드록사이드((1-hydroxypropyl) trimethylammonium hydroxide)으로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to paragraph 1,
The slurry composition further includes a pH adjuster,
The pH adjusting agent includes potassium hydroxide, sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrobromic acid, iodic acid, hydrochloric acid, perchloric acid, triethanolamine, trimethanolamine, monoethanolamine, diethanolamine, dimethylbenzylamine, Toxybenzylamine, 2-amino-2-methyl-1-propanol, 2-amino-2-ethyl-1,3-propanediol, tris(hydroxymethyl)aminomethane, 2-amino-1-butanol, 2- Amino-2-methyl-1,3-propanediol, dimethylaminomethylpropanol, diethylaminoethanol, monoisopropanolamine, aminoethylethanolamine, 3-amino-1-propanol, 2-amino-1-propanol, 1- Amino-2-propanol, 1-amino-pentanol, 2-(2-aminoethylamino)ethanol, 2-dimethylamino-2-methyl-1-propanol, N,N-diethylethanolamine, ammonia, ammonium methyl Propanol (Ammonium methyl propanol; AMP), Tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate, sodium carbonate, imidazole , Monoethanolamine (MEA), Diethanol amine (DEA), Triethanolamine (TEA), 1,5-diamino-3-pentanol, 2-dimethylamino-2-methyl-1-propanol , 1-amino-2-propanol, 1-dimethylamino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino -1-Propanol, 2-diethylamino-1-propanol, 2-(2-aminoethylamino)ethanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino )2-Propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, Nn-butyldiethanolamine, Nt-butylethanol Amine, N-cyclohexyldiethanolamine, 2-(dimethylamino)ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cyclo Aminoethanol, 2-amino-2-pentanol, 2-[bis(2-hydroxyethyl)amino]-2-methyl-1-propanol, 2-[bis(2-hydroxyethyl)amino]-2- Propanol, N,N-bis(2-hydroxypropyl)ethanolamine, 2-amino-2-methyl-1-propanol, tris(hydroxymethyl)aminomethane, triisopropanolamine, tetraethylammonium hydroxide (Tetraethyl ammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide, tetrapentylammonium hydroxide (TBAH), methyl (trihydroxyethyl) ammonium hydroxide Side (Methyl(trishydroxyethyl)ammonium hydroxide), Tributylethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl), triethylammonium hydroxide At least one selected from the group consisting of (2-hydroxyethyl) tripropylammonium hydroxide and (1-hydroxypropyl) triethylammonium hydroxide. which includes,
Slurry composition for silicon wafer polishing.
상기 pH 조절제는, 상기 슬러리 조성물 중 0.0001 중량% 내지 3 중량%인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.
According to clause 13,
The pH adjuster is 0.0001% to 3% by weight of the slurry composition,
Slurry composition for silicon wafer polishing.
상기 슬러리 조성물의 pH는, 8.0 내지 12.0인 것인,
실리콘 웨이퍼 연마용 슬러리 조성물.According to paragraph 1,
The pH of the slurry composition is 8.0 to 12.0,
Slurry composition for silicon wafer polishing.
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