KR20230158050A - Photosensitive resin film, method of forming a resist pattern, and method of forming a wiring pattern - Google Patents
Photosensitive resin film, method of forming a resist pattern, and method of forming a wiring pattern Download PDFInfo
- Publication number
- KR20230158050A KR20230158050A KR1020237035166A KR20237035166A KR20230158050A KR 20230158050 A KR20230158050 A KR 20230158050A KR 1020237035166 A KR1020237035166 A KR 1020237035166A KR 20237035166 A KR20237035166 A KR 20237035166A KR 20230158050 A KR20230158050 A KR 20230158050A
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive resin
- resin film
- forming
- resist pattern
- mass
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 73
- 229920005989 resin Polymers 0.000 title claims abstract description 49
- 239000011347 resin Substances 0.000 title claims abstract description 49
- -1 acrylate compound Chemical class 0.000 claims abstract description 49
- 239000011230 binding agent Substances 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- 239000003112 inhibitor Substances 0.000 claims abstract description 10
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 10
- 239000003999 initiator Substances 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 19
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 16
- 238000011282 treatment Methods 0.000 claims description 12
- 125000002723 alicyclic group Chemical group 0.000 claims description 8
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 7
- 125000004386 diacrylate group Chemical group 0.000 claims description 7
- 150000003440 styrenes Chemical class 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- YCIMNLLNPGFGHC-UHFFFAOYSA-N o-dihydroxy-benzene Natural products OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 27
- 238000011161 development Methods 0.000 description 23
- 230000018109 developmental process Effects 0.000 description 23
- 239000000243 solution Substances 0.000 description 16
- 239000000178 monomer Substances 0.000 description 15
- 239000011342 resin composition Substances 0.000 description 15
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 14
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 14
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000007261 regionalization Effects 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 239000003513 alkali Substances 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- 239000001294 propane Substances 0.000 description 7
- 229920002799 BoPET Polymers 0.000 description 6
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 6
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- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- PGSWEKYNAOWQDF-UHFFFAOYSA-N 3-methylcatechol Chemical compound CC1=CC=CC(O)=C1O PGSWEKYNAOWQDF-UHFFFAOYSA-N 0.000 description 4
- HFLGBNBLMBSXEM-UHFFFAOYSA-N 4-Ethyl-1,2-benzenediol Chemical compound CCC1=CC=C(O)C(O)=C1 HFLGBNBLMBSXEM-UHFFFAOYSA-N 0.000 description 4
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001515 polyalkylene glycol Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- GTELLNMUWNJXMQ-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO GTELLNMUWNJXMQ-UHFFFAOYSA-N 0.000 description 3
- PJZLSMMERMMQBJ-UHFFFAOYSA-N 3,5-ditert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC(O)=C(O)C(C(C)(C)C)=C1 PJZLSMMERMMQBJ-UHFFFAOYSA-N 0.000 description 3
- BJEMXPVDXFSROA-UHFFFAOYSA-N 3-butylbenzene-1,2-diol Chemical compound CCCCC1=CC=CC(O)=C1O BJEMXPVDXFSROA-UHFFFAOYSA-N 0.000 description 3
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 3
- XESZUVZBAMCAEJ-UHFFFAOYSA-N 4-tert-butylcatechol Chemical compound CC(C)(C)C1=CC=C(O)C(O)=C1 XESZUVZBAMCAEJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid group Chemical group C(C=1C(C(=O)O)=CC=CC1)(=O)O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 150000005846 sugar alcohols Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
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- NGBORXWMVHHHLG-UHFFFAOYSA-N 1-ethylcyclohexa-3,5-diene-1,2-diol Chemical compound CCC1(O)C=CC=CC1O NGBORXWMVHHHLG-UHFFFAOYSA-N 0.000 description 2
- LNTVWURFZCEJDN-UHFFFAOYSA-N 1-methylcyclohexa-3,5-diene-1,2-diol Chemical compound CC1(O)C=CC=CC1O LNTVWURFZCEJDN-UHFFFAOYSA-N 0.000 description 2
- DYNJYFKETHORFR-UHFFFAOYSA-N 1-propylcyclohexa-3,5-diene-1,2-diol Chemical compound CCCC1(O)C=CC=CC1O DYNJYFKETHORFR-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
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- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- VJIDDJAKLVOBSE-UHFFFAOYSA-N 2-ethylbenzene-1,4-diol Chemical compound CCC1=CC(O)=CC=C1O VJIDDJAKLVOBSE-UHFFFAOYSA-N 0.000 description 2
- UUCQGNWZASKXNN-UHFFFAOYSA-N 3-ethylcatechol Chemical compound CCC1=CC=CC(O)=C1O UUCQGNWZASKXNN-UHFFFAOYSA-N 0.000 description 2
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- VGMJYYDKPUPTID-UHFFFAOYSA-N 4-ethylbenzene-1,3-diol Chemical compound CCC1=CC=C(O)C=C1O VGMJYYDKPUPTID-UHFFFAOYSA-N 0.000 description 2
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- SCTPZNJTGOGSQD-UHFFFAOYSA-N 4-propylbenzene-1,2-diol Chemical compound CCCC1=CC=C(O)C(O)=C1 SCTPZNJTGOGSQD-UHFFFAOYSA-N 0.000 description 2
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
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- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
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- 239000000654 additive Substances 0.000 description 2
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- 125000003545 alkoxy group Chemical group 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
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- 230000000052 comparative effect Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
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- 235000019441 ethanol Nutrition 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 2
- 229940107698 malachite green Drugs 0.000 description 2
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- SCFQUKBBGYTJNC-UHFFFAOYSA-N heptyl prop-2-enoate Chemical compound CCCCCCCOC(=O)C=C SCFQUKBBGYTJNC-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
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- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
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- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
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- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
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- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
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- 239000013557 residual solvent Substances 0.000 description 1
- RSVDRWTUCMTKBV-UHFFFAOYSA-N sbb057044 Chemical compound C12CC=CC2C2CC(OCCOC(=O)C=C)C1C2 RSVDRWTUCMTKBV-UHFFFAOYSA-N 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 229940048086 sodium pyrophosphate Drugs 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- 239000004250 tert-Butylhydroquinone Substances 0.000 description 1
- 235000019281 tert-butylhydroquinone Nutrition 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ROVRRJSRRSGUOL-UHFFFAOYSA-N victoria blue bo Chemical compound [Cl-].C12=CC=CC=C2C(NCC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 ROVRRJSRRSGUOL-UHFFFAOYSA-N 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/38—Polymerisation using regulators, e.g. chain terminating agents, e.g. telomerisation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
- C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
Abstract
본 개시는, 바인더 폴리머와, 아크릴레이트 화합물을 포함하는 광중합성 화합물과, 광중합 개시제와, 중합 금지제를 함유하고, 두께가 35~300μm인 감광성 수지 필름, 그 감광성 수지 필름을 이용한 레지스트 패턴의 형성 방법, 및 배선 패턴의 형성 방법에 관한 것이다.The present disclosure relates to a photosensitive resin film containing a binder polymer, a photopolymerizable compound containing an acrylate compound, a photopolymerization initiator, and a polymerization inhibitor, and having a thickness of 35 to 300 μm, and formation of a resist pattern using the photosensitive resin film. It relates to a method and a method of forming a wiring pattern.
Description
본 개시는, 감광성 수지 필름, 레지스트 패턴의 형성 방법, 및 배선 패턴의 형성 방법에 관한 것이다.This disclosure relates to a photosensitive resin film, a method of forming a resist pattern, and a method of forming a wiring pattern.
반도체 집적회로(LSI) 또는 배선판의 제조 분야에 있어서, 도체 패턴을 제작하기 위한 레지스트로서, 감광성 재료가 이용되고 있다. 예를 들면, 배선판의 제조에 있어서, 감광성 수지 조성물을 이용하여 레지스트를 형성하고, 이어서, 도금 처리에 의하여, 도체 패턴, 메탈 포스트 등을 형성하고 있다. 보다 구체적으로는, 기판 상에, 감광성 수지 조성물 등을 이용하여 감광층을 형성하고, 그 감광층을 소정의 마스크 패턴을 통하여 노광하며, 이어서, 도체 패턴, 메탈 포스트 등을 형성하는 부분을 선택적으로 제거(박리)할 수 있도록 현상 처리함으로써, 레지스트 패턴(레지스트)을 형성한다. 이어서, 이 제거된 부분에, 구리 등의 도체를 도금 처리에 의하여 형성한 후, 레지스트 패턴을 제거함으로써, 도체 패턴, 메탈 포스트 등을 구비하는 배선판을 제조할 수 있다(예를 들면, 특허문헌 1 및 2 참조).In the field of manufacturing semiconductor integrated circuits (LSI) or wiring boards, photosensitive materials are used as resists for producing conductor patterns. For example, in the manufacture of a wiring board, a resist is formed using a photosensitive resin composition, and then conductor patterns, metal posts, etc. are formed through plating treatment. More specifically, a photosensitive layer is formed on a substrate using a photosensitive resin composition, etc., the photosensitive layer is exposed to light through a predetermined mask pattern, and then the portions where the conductor pattern, metal post, etc. are formed are selectively formed. A resist pattern (resist) is formed by developing so that it can be removed (peeled). Next, a conductor such as copper is formed in the removed portion by plating treatment, and then the resist pattern is removed, thereby producing a wiring board including a conductor pattern, a metal post, etc. (for example, Patent Document 1 and 2).
인덕터 등의 전자 부품에서는, 도체층의 두께를 두껍게 하여, 애스펙트비가 높은 배선 패턴을 형성하는 것, 생산 효율의 향상을 위하여, 각 프로세스를 단축, 단시간화하는 것이 검토되고 있다. 그 때문에, 감광성 수지 필름에는, 후막(厚膜)의 레지스트 패턴을 형성할 수 있음과 함께, 형성된 레지스트 패턴의 박리 시간을 단축하는 것이 요구된다.In electronic components such as inductors, increasing the thickness of the conductor layer to form a wiring pattern with a high aspect ratio, and shortening and shortening each process to improve production efficiency, are being considered. Therefore, the photosensitive resin film is required to be able to form a thick resist pattern and to shorten the peeling time of the formed resist pattern.
본 개시는, 이상의 사정을 감안하여 이루어진 것이며, 패턴 형성성과 박리 특성을 양립할 수 있는 감광성 수지 필름, 이것을 이용한 레지스트 패턴의 형성 방법, 및 배선 패턴의 형성 방법을 제공하는 것을 목적으로 한다.The present disclosure has been made in consideration of the above circumstances, and aims to provide a photosensitive resin film capable of achieving both pattern formation and peeling characteristics, a method of forming a resist pattern using the same, and a method of forming a wiring pattern.
본 개시에 관한 감광성 수지 필름은, 바인더 폴리머와, 아크릴레이트 화합물을 포함하는 광중합성 화합물과, 광중합 개시제와, 중합 금지제를 함유하고, 두께가 35~300μm이다.The photosensitive resin film according to the present disclosure contains a binder polymer, a photopolymerizable compound containing an acrylate compound, a photopolymerization initiator, and a polymerization inhibitor, and has a thickness of 35 to 300 μm.
본 개시에 관한 레지스트 패턴의 형성 방법은, 기판 상에, 상술한 감광성 수지 필름을 이용하여 감광층을 마련하는 공정과, 감광층의 적어도 일부에 활성광선을 조사(照射)하여, 광경화부를 형성하는 공정과, 감광층의 광경화부 이외의 적어도 일부를 제거하여, 레지스트 패턴을 형성하는 공정을 구비한다.The method for forming a resist pattern according to the present disclosure includes steps of providing a photosensitive layer on a substrate using the photosensitive resin film described above, and irradiating actinic rays to at least a portion of the photosensitive layer to form a photocured portion. and a step of removing at least part of the photosensitive layer other than the photocured portion to form a resist pattern.
본 개시에 관한 배선 패턴의 형성 방법은, 상기 레지스트 패턴의 형성 방법에 의하여 레지스트 패턴이 형성된 기판을 도금 처리하여 도체 패턴을 형성하는 공정과, 도금 처리 후에, 광경화부를 제거하는 공정을 구비한다.The method of forming a wiring pattern according to the present disclosure includes a step of forming a conductor pattern by plating a substrate on which a resist pattern is formed by the above-described resist pattern forming method, and a step of removing a photocured portion after the plating treatment.
본 개시에 의하면, 패턴 형성성과 박리 특성을 양립할 수 있는 감광성 수지 필름, 이것을 이용한 레지스트 패턴의 형성 방법, 및 배선 패턴의 형성 방법을 제공할 수 있다.According to the present disclosure, it is possible to provide a photosensitive resin film capable of achieving both pattern formation and peeling characteristics, a method of forming a resist pattern using the same, and a method of forming a wiring pattern.
도 1은 감광성 수지 필름의 일 실시형태를 나타내는 모식 단면도이다.
도 2는 배선 패턴을 형성하는 공정의 일 양태를 모식적으로 나타내는 도이다.1 is a schematic cross-sectional view showing one embodiment of a photosensitive resin film.
FIG. 2 is a diagram schematically showing one aspect of a process for forming a wiring pattern.
이하, 본 개시에 대하여, 상세하게 설명한다. 본 명세서에 있어서, "~"를 이용하여 나타난 수치 범위는, "~"의 전후에 기재되는 수치를 각각 최솟값 및 최댓값으로서 포함하는 범위를 나타낸다. 또, 본 명세서 중에 단계적으로 기재되어 있는 수치 범위에 있어서, 소정 단계의 수치 범위의 상한값 또는 하한값은, 다른 단계의 수치 범위의 상한값 또는 하한값으로 치환해도 된다. 본 명세서 중에 기재되어 있는 수치 범위에 있어서, 그 수치 범위의 상한값 또는 하한값은, 실시예에 나타나 있는 값으로 치환해도 된다.Hereinafter, the present disclosure will be described in detail. In this specification, the numerical range indicated using “~” indicates a range that includes the numerical values written before and after “~” as the minimum and maximum values, respectively. In addition, in the numerical range described in stages in this specification, the upper or lower limit of the numerical range at a certain level may be replaced with the upper or lower limit of the numerical range at another level. In the numerical range described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples.
본 명세서에 있어서, "(메트)아크릴산"이란, "아크릴산" 및 그에 대응하는 "메타크릴산" 중 적어도 일방을 의미하고, (메트)아크릴레이트 등의 다른 유사 표현에 대해서도 동일하다. 또, "아크릴레이트 화합물"에는, 아크릴로일기를 갖는 화합물이 포함되고, "메타크릴레이트 화합물"에는, 메타크릴로일기를 갖는 화합물이 포함된다.In this specification, “(meth)acrylic acid” means at least one of “acrylic acid” and the corresponding “methacrylic acid”, and the same applies to other similar expressions such as (meth)acrylate. Moreover, "acrylate compounds" include compounds having an acryloyl group, and "methacrylate compounds" include compounds having a methacryloyl group.
본 명세서에 있어서, "고형분"이란, 감광성 수지 조성물에 포함되는 물, 용매 등의 휘발하는 물질을 제외한 불휘발분인 것이며, 그 수지 조성물을 건조시켰을 때에, 휘발하지 않고 남는 성분을 나타내고, 또 25℃ 부근의 실온에서 액상, 물엿상, 및 왁스상인 것도 포함한다.In this specification, “solid content” refers to the non-volatile content excluding volatile substances such as water and solvent contained in the photosensitive resin composition, and refers to the component that remains without volatilizing when the resin composition is dried, and is stored at 25°C. It also includes those in liquid form, starch syrup form, and wax form at around room temperature.
[감광성 수지 필름][Photosensitive resin film]
본 실시형태에 관한 감광성 수지 필름은, 바인더 폴리머와, 아크릴레이트 화합물을 포함하는 광중합성 화합물과, 광중합 개시제와, 중합 금지제를 함유하고, 두께가 35~300μm이다.The photosensitive resin film according to this embodiment contains a binder polymer, a photopolymerizable compound containing an acrylate compound, a photopolymerization initiator, and a polymerization inhibitor, and has a thickness of 35 to 300 μm.
본 실시형태에 관한 감광성 수지 필름은, 바인더 폴리머, 광중합성 화합물, 광중합 개시제, 및 중합 금지제를 함유하는 감광성 수지 조성물을 이용하여 제작할 수 있다. 이하, 감광성 수지 필름 및 감광성 수지 조성물로 이용되는 각 성분에 대하여 상세하게 설명한다.The photosensitive resin film according to this embodiment can be produced using a photosensitive resin composition containing a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and a polymerization inhibitor. Hereinafter, each component used in the photosensitive resin film and photosensitive resin composition will be described in detail.
((A) 바인더 폴리머)((A) Binder polymer)
(A) 바인더 폴리머(이하, "(A) 성분"이라고도 한다)은, 예를 들면, 중합성 단량체를 라디칼 중합시킴으로써 제조할 수 있다. 중합성 단량체로서는, 예를 들면, 스타이렌 또는 스타이렌 유도체, 카복시기를 갖는 중합성 단량체, 수산기를 갖는 중합성 단량체, (메트)아크릴산 벤질에스터, (메트)아크릴산 알킬에스터, (메트)아크릴산 테트라하이드로퓨퓨릴에스터, (메트)아크릴산 다이메틸아미노에틸에스터, (메트)아크릴산 다이에틸아미노에틸에스터, (메트)아크릴산 글리시딜에스터, 다이아세톤아크릴아마이드 등의 아크릴아마이드, 아크릴로나이트릴, 알킬바이닐에터, 2,2,2-트라이플루오로에틸(메트)아크릴레이트, 및 2,2,3,3-테트라플루오로프로필(메트)아크릴레이트를 들 수 있다. 중합성 단량체는 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.(A) The binder polymer (hereinafter also referred to as “component (A)”) can be produced, for example, by radically polymerizing a polymerizable monomer. Examples of polymerizable monomers include styrene or styrene derivatives, polymerizable monomers having a carboxy group, polymerizable monomers having a hydroxyl group, benzyl (meth)acrylic acid, alkyl (meth)acrylic acid, and tetrahydro (meth)acrylic acid. Acrylamides such as furfuryl ester, (meth)acrylic acid dimethylaminoethyl ester, (meth)acrylic acid diethylaminoethyl ester, (meth)acrylic acid glycidyl ester, and diacetone acrylamide, acrylonitrile, and alkylvinyl. ter, 2,2,2-trifluoroethyl (meth)acrylate, and 2,2,3,3-tetrafluoropropyl (meth)acrylate. Polymerizable monomers can be used individually or in combination of two or more types.
(A) 성분은, 밀착성 및 박리 특성의 관점에서, 스타이렌 또는 스타이렌 유도체에 근거하는 구조 단위를 가져도 된다. 스타이렌 유도체는, 바이닐톨루엔, α-메틸스타이렌 등의 스타이렌의 α위 또는 방향환에 있어서의 수소 원자가 치환된 중합 가능한 화합물이다. (A) 성분은, 예를 들면, 스타이렌 또는 스타이렌 유도체를 포함하는 중합성 단량체와 그 외의 중합성 단량체를 라디칼 중합시킴으로써 제조할 수 있다.Component (A) may have a structural unit based on styrene or a styrene derivative from the viewpoint of adhesion and peeling characteristics. Styrene derivatives are polymerizable compounds in which the hydrogen atom in the α position or aromatic ring of styrene, such as vinyl toluene or α-methylstyrene, is substituted. Component (A) can be produced, for example, by radically polymerizing a polymerizable monomer containing styrene or a styrene derivative and other polymerizable monomers.
(A) 성분 중에 있어서의 스타이렌 또는 스타이렌 유도체에 근거하는 구조 단위의 함유량은, 15~64질량%, 25~60질량%, 35~55질량%, 또는 45~50질량%여도 된다. 스타이렌 또는 스타이렌 유도체에 근거하는 구조 단위의 함유량이 15질량% 이상에서는, 밀착성이 향상되는 경향이 있으며, 64질량% 이하에서는, 현상 시에 박리편이 커지는 것을 억제할 수 있고, 박리에 필요로 하는 시간의 장시간화가 억제되는 경향이 있다.The content of the structural unit based on styrene or a styrene derivative in the component (A) may be 15 to 64 mass%, 25 to 60 mass%, 35 to 55 mass%, or 45 to 50 mass%. When the content of structural units based on styrene or styrene derivatives is 15% by mass or more, adhesion tends to improve, and when it is 64% by mass or less, the growth of peeling pieces during development can be suppressed and is not required for peeling. There is a tendency to suppress the lengthening of the time spent doing it.
(A) 성분은, 알칼리 현상성의 관점에서, 카복시기를 가져도 된다. 카복시기를 갖는 카복시기를 갖는 중합성 단량체로서는, 예를 들면, (메트)아크릴산, α-브로모아크릴산, α-클로로아크릴산, β-퓨릴(메트)아크릴산, β-스타이릴(메트)아크릴산, 말레산, 말레산 무수물, 말레산 모노메틸, 말레산 모노에틸, 말레산 모노아이소프로필 등의 말레산 모노에스터, 푸마르산, 신남산, α-사이아노신남산, 이타콘산, 크로톤산, 및 프로피올산을 들 수 있다. 알칼리 현상성을 보다 향상시키는 점에서, 카복시기를 갖는 중합성 단량체는, (메트)아크릴산이어도 되고, 메타크릴산이어도 된다.(A) Component may have a carboxy group from the viewpoint of alkaline developability. Examples of polymerizable monomers having a carboxyl group include (meth)acrylic acid, α-bromoacrylic acid, α-chloroacrylic acid, β-furyl (meth)acrylic acid, β-styryl (meth)acrylic acid, and maleic acid. , maleic acid monoesters such as maleic acid anhydride, monomethyl maleate, monoethyl maleate, and monoisopropyl maleate, fumaric acid, cinnamic acid, α-cyanocinnamic acid, itaconic acid, crotonic acid, and propiolic acid. You can. From the viewpoint of further improving alkali developability, the polymerizable monomer having a carboxy group may be (meth)acrylic acid or methacrylic acid.
알칼리 현상성과 알칼리 내성을 양호한 밸런스로 향상시키는 점에서, 카복시기를 갖는 중합성 단량체에 근거하는 구조 단위의 함유량은, (A) 성분의 전체량을 기준으로 하여, 10~50질량%, 15~40질량%, 또는 20~35질량%여도 된다. 카복시기를 갖는 중합성 단량체에 근거하는 구조 단위의 함유량이 10질량% 이상에서는 알칼리 현상성이 향상되는 경향이 있고, 50질량% 이하에서는 알칼리 내성이 우수한 경향이 있다.In order to improve alkali developability and alkali resistance with a good balance, the content of the structural unit based on a polymerizable monomer having a carboxyl group is 10 to 50% by mass, 15 to 40%, based on the total amount of component (A). It may be mass%, or 20 to 35 mass%. When the content of structural units based on polymerizable monomers having a carboxyl group is 10% by mass or more, alkali developability tends to improve, and when it is 50% by mass or less, alkali resistance tends to be excellent.
(A) 성분은, 박리편의 세분화의 관점에서, 수산기를 가져도 된다. 수산기를 갖는 중합성 단량체로서는, 예를 들면, 2-하이드록시에틸(메트)아크릴레이트, 2-하이드록시프로필(메트)아크릴레이트, 3-하이드록시프로필(메트)아크릴레이트, 2-하이드록시뷰틸(메트)아크릴레이트, 3-하이드록시뷰틸(메트)아크릴레이트, 4-하이드록시뷰틸(메트)아크릴레이트 등의 수산기 함유 (메트)아크릴레이트; 및 2-하이드록시에틸바이닐에터, 3-하이드록시프로필바이닐에터, 4-하이드록시뷰틸바이닐에터 등의 수산기 함유 바이닐에터를 들 수 있다.(A) The component may have a hydroxyl group from the viewpoint of segmentation of the peeled piece. Examples of polymerizable monomers having a hydroxyl group include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl. Hydroxyl group-containing (meth)acrylates such as (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and hydroxyl group-containing vinyl ethers such as 2-hydroxyethyl vinyl ether, 3-hydroxypropyl vinyl ether, and 4-hydroxybutyl vinyl ether.
패턴 형성성과 박리 특성을 양호한 밸런스로 향상시키는 점에서, 수산기를 갖는 중합성 단량체에 근거하는 구조 단위의 함유량은, (A) 성분의 전체량을 기준으로 하여, 0.5~15질량%, 1~10질량%, 또는 2~5질량%여도 된다.In order to improve pattern formation and peeling properties with a good balance, the content of the structural unit based on a polymerizable monomer having a hydroxyl group is 0.5 to 15% by mass, 1 to 10%, based on the total amount of component (A). It may be mass%, or 2-5 mass%.
(A) 성분은, 해상도 및 애스펙트비의 관점에서, (메트)아크릴산 벤질에스터에 근거하는 구조 단위를 가져도 된다. (A) 성분 중에 있어서의 (메트)아크릴산 벤질에스터에서 유래하는 구조 단위의 함유량은, 해상도 및 애스펙트비를 향상시키는 점에서, 5~40질량%, 10~35질량%, 또는 15~30질량%여도 된다.Component (A) may have a structural unit based on benzyl (meth)acrylic acid from the viewpoint of resolution and aspect ratio. (A) The content of the structural unit derived from benzyl (meth)acrylic acid in the component is 5 to 40% by mass, 10 to 35% by mass, or 15 to 30% by mass in terms of improving resolution and aspect ratio. It's okay.
(A) 성분은, 레지스트 패턴의 가역성을 향상시키는 점에서, (메트)아크릴산 알킬에스터에 근거하는 구조 단위를 가져도 된다. (메트)아크릴산 알킬에스터로서는, 예를 들면, (메트)아크릴산 메틸, (메트)아크릴산 에틸, (메트)아크릴산 프로필, (메트)아크릴산 뷰틸, (메트)아크릴산 펜틸, (메트)아크릴산 헥실, (메트)아크릴산 헵틸, (메트)아크릴산 옥틸, (메트)아크릴산 2-에틸헥실, (메트)아크릴산 노닐, (메트)아크릴산 데실, (메트)아크릴산 운데실, 및 (메트)아크릴산 도데실을 들 수 있다.Component (A) may have a structural unit based on (meth)acrylic acid alkyl ester from the point of improving the reversibility of the resist pattern. Examples of alkyl (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, and (meth)acrylate. ) heptyl acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, and dodecyl (meth)acrylate.
(A) 성분의 산가는, 현상성, 해상도 및 박리 특성의 밸런스를 보다 향상시키는 점에서, 100~220mgKOH/g, 120~210mgKOH/g, 140~200mgKOH/g, 160~195mgKOH/g, 또는 170~190mgKOH/g이어도 된다.The acid value of component (A) is 100 to 220 mgKOH/g, 120 to 210 mgKOH/g, 140 to 200 mgKOH/g, 160 to 195 mgKOH/g, or 170 in order to further improve the balance of developability, resolution, and peeling characteristics. It may be ~190mgKOH/g.
(A) 성분의 중량 평균 분자량(Mw)은, 10000~100000, 15000~80000, 18000~60000, 20000~50000, 또는 25000~40000이어도 된다. (A) 성분의 Mw가 10000 이상에서는, 광경화부의 내현상액성이 우수한 경향이 있고, 100000 이하에서는, 미노광부의 현상 시간이 길어지는 것을 억제할 수 있는 경향이 있다. (A) 성분은, 분산도(중량 평균 분자량/수평균 분자량)가 1.0~3.0, 또는 1.0~2.0이어도 된다. 분산도가 작아지면 해상도가 향상되는 경향이 있다.The weight average molecular weight (Mw) of the component (A) may be 10,000 to 100,000, 15,000 to 80,000, 18,000 to 60,000, 20,000 to 50,000, or 25,000 to 40,000. When the Mw of component (A) is 10,000 or more, there is a tendency for the photocured portion to have excellent developer resistance, and when it is 100,000 or less, there is a tendency to suppress the development time for the unexposed portion from being prolonged. (A) Component may have a dispersion degree (weight average molecular weight/number average molecular weight) of 1.0 to 3.0 or 1.0 to 2.0. As the degree of dispersion decreases, resolution tends to improve.
본 명세서에 있어서의 중량 평균 분자량 및 수평균 분자량은, 젤 퍼미에이션 크로마토그래피(GPC)에 의하여 측정되고, 표준 폴리스타이렌을 표준 시료로 하여 환산한 값이다.The weight average molecular weight and number average molecular weight in this specification are values measured by gel permeation chromatography (GPC) and converted using standard polystyrene as a standard sample.
(A) 성분은, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다. 2종 이상을 조합하여 사용하는 경우의 (A) 성분으로서는, 예를 들면, 상이한 중합성 단량체로 이루어지는 2종 이상의 바인더 폴리머, 상이한 Mw의 2종 이상의 바인더 폴리머, 및, 상이한 분산도의 2종 이상의 바인더 폴리머를 들 수 있다.(A) Component can be used individually or in combination of 2 or more types. Component (A) when two or more types are used in combination include, for example, two or more binder polymers made of different polymerizable monomers, two or more binder polymers with different Mw, and two or more types of binder polymers with different dispersions. A binder polymer may be mentioned.
(A) 성분의 함유량은, (A) 성분 및 후술하는 (B) 성분의 총량 100질량부에 대하여, 30~80질량부, 40~75질량부, 50~70질량부, 또는 50~60질량부여도 된다. (A) 성분의 함유량이 이 범위 내이면, 감광성 수지 필름 및 감광층의 광경화부의 강도가 보다 양호해진다.The content of component (A) is 30 to 80 parts by mass, 40 to 75 parts by mass, 50 to 70 parts by mass, or 50 to 60 parts by mass, based on 100 parts by mass of the total amount of component (A) and component (B) described later. It can also be granted. When the content of component (A) is within this range, the strength of the photocured portion of the photosensitive resin film and the photosensitive layer becomes better.
((B) 광중합성 화합물)((B) Photopolymerizable compound)
(B) 광중합성 화합물(이하, "(B) 성분"이라고도 한다)으로서, 아크릴레이트 화합물을 포함함으로써, 감광성 수지 필름은, 현상 시의 밀착성이 우수한 후막의 레지스트 패턴을 형성할 수 있음과 함께, 형성된 레지스트 패턴의 박리 시간을 단축할 수 있다. 아크릴로일기는 메틸기를 갖지 않기 때문에, 메타크릴로일기보다 소수성이 낮고, 메틸기에 의한 입체 장해가 없기 때문에, 레지스트 패턴을 박리액에 의하여 제거하기 쉬워진다고, 본 발명자들은 추측하고 있다.(B) By containing an acrylate compound as the photopolymerizable compound (hereinafter also referred to as “component (B)”), the photosensitive resin film can form a thick resist pattern with excellent adhesion during development, The peeling time of the formed resist pattern can be shortened. Since the acryloyl group does not have a methyl group, its hydrophobicity is lower than that of the methacryloyl group, and there is no steric hindrance due to the methyl group, the present inventors speculate that the resist pattern becomes easier to remove with a stripper.
아크릴레이트 화합물은, 아크릴로일기를 적어도 1개 갖고 있으면 특별히 한정되지 않고, 아크릴로일기를 2개 이상 가져도 된다. 아크릴레이트 화합물로서는, 예를 들면, 다가 알코올 유래의 골격을 갖는 아크릴레이트, 유레테인 결합을 갖는 아크릴레이트, 비스페놀 골격을 갖는 아크릴레이트, 지환식 골격을 갖는 아크릴레이트, 프탈산 골격을 갖는 아크릴레이트, 노닐페녹시폴리에틸렌옥시아크릴레이트, 및 아크릴산 알킬에스터를 들 수 있다. 아크릴레이트 화합물은, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.The acrylate compound is not particularly limited as long as it has at least one acryloyl group, and may have two or more acryloyl groups. Examples of acrylate compounds include acrylates with a polyhydric alcohol-derived skeleton, acrylates with a urethane bond, acrylates with a bisphenol skeleton, acrylates with an alicyclic skeleton, acrylates with a phthalic acid skeleton, Nonylphenoxypolyethyleneoxyacrylate, and acrylic acid alkyl ester can be mentioned. Acrylate compounds can be used individually or in combination of two or more types.
다가 알코올 유래의 골격을 갖는 아크릴레이트로서는, 예를 들면, 폴리알킬렌글라이콜다이아크릴레이트, 트라이메틸올프로페인다이아크릴레이트, 트라이메틸올프로페인트라이아크릴레이트, EO 변성 트라이메틸올프로페인트라이아크릴레이트, PO 변성 트라이메틸올프로페인트라이아크릴레이트, EO,PO 변성 트라이메틸올프로페인트라이아크릴레이트, 테트라메틸올메테인트라이아크릴레이트, 테트라메틸올메테인테트라아크릴레이트, 및 다이펜타에리트리톨 또는 펜타에리트리톨 유래의 골격을 갖는 아크릴레이트를 들 수 있다. "EO 변성"이란 에틸렌옥사이드(EO)기의 블록 구조를 갖는 것인 것을 의미하고, "PO 변성"이란 프로필렌옥사이드(PO)기의 블록 구조를 갖는 것인 것을 의미한다.Acrylates having a skeleton derived from polyhydric alcohol include, for example, polyalkylene glycol diacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, and EO-modified trimethylolpropane triacrylate. Acrylates, PO-modified trimethylolpropane triacrylate, EO, PO-modified trimethylolpropane triacrylate, tetramethylolmethane triacrylate, tetramethylolmethanetetraacrylate, and dipentaerythritol. Alternatively, an acrylate having a skeleton derived from pentaerythritol can be mentioned. “EO modified” means having a block structure of ethylene oxide (EO) groups, and “PO modified” means having a block structure of propylene oxide (PO) groups.
폴리알킬렌글라이콜다이아크릴레이트는, EO기 및 PO기 중 적어도 일방을 가져도 되고, EO기 및 PO기의 쌍방을 가져도 된다. EO기 및 PO기의 쌍방을 갖는 폴리알킬렌글라이콜다이아크릴레이트에 있어서, EO기 및 PO기는, 각각 연속하여 블록적으로 존재해도 되고, 랜덤으로 존재해도 된다. 또, PO기는, 옥시-n-프로필렌기 또는 옥시아이소프로필렌기 중 어느 것이어도 된다. 또한, (폴리)옥시아이소프로필렌기에 있어서, 프로필렌기의 2급 탄소가 산소 원자에 결합하고 있어도 되고, 1급 탄소가 산소 원자에 결합하고 있어도 된다.Polyalkylene glycol diacrylate may have at least one of an EO group and a PO group, or may have both an EO group and a PO group. In polyalkylene glycol diacrylate having both an EO group and a PO group, the EO group and the PO group may each exist continuously in a block form or may exist randomly. Additionally, the PO group may be either an oxy-n-propylene group or an oxyisopropylene group. Additionally, in the (poly)oxyisopropylene group, the secondary carbon of the propylene group may be bonded to an oxygen atom, or the primary carbon may be bonded to an oxygen atom.
유레테인 결합을 갖는 아크릴레이트로서는, 예를 들면, β위에 OH기를 갖는 아크릴 모노머와 다이아이소사이아네이트(아이소포론다이아이소사이아네이트, 2,6-톨루엔다이아이소사이아네이트, 2,4-톨루엔다이아이소사이아네이트, 1,6-헥사메틸렌다이아이소사이아네이트 등)의 부가 반응물, 트리스(아크릴옥시테트라에틸렌글라이콜아이소사이아네이트)헥사메틸렌아이소사이아누레이트, EO 변성 유레테인다이아크릴레이트, 및 EO,PO 변성 유레테인다이아크릴레이트를 들 수 있다.Acrylates having a urethane bond include, for example, acrylic monomers having an OH group on β and diisocyanates (isophorone diisocyanate, 2,6-toluene diisocyanate, 2,4 -Addition reactants of (toluene diisocyanate, 1,6-hexamethylene diisocyanate, etc.), tris (acryloxytetraethylene glycol isocyanate) hexamethylene isocyanurate, EO modified urethane Examples include indiacrylate and EO, PO modified urethane diacrylate.
비스페놀 골격을 갖는 아크릴레이트로서는, 예를 들면, 2,2-비스(4-(아크릴옥시폴리에톡시)페닐)프로페인, 2,2-비스(4-(아크릴옥시폴리프로폭시)페닐)프로페인, 2,2-비스(4-(아크릴옥시폴리뷰톡시)페닐)프로페인, 및 2,2-비스(4-(아크릴옥시폴리에톡시폴리프로폭시)페닐)프로페인을 들 수 있다. 그중에서도, 패턴 형성성을 더 향상시키는 점에서, 2,2-비스(4-(아크릴옥시폴리에톡시)페닐)프로페인이 바람직하다.Acrylates having a bisphenol skeleton include, for example, 2,2-bis(4-(acryloxypolyethoxy)phenyl)propane and 2,2-bis(4-(acryloxypolypropoxy)phenyl)propane. Payne, 2,2-bis(4-(acryloxypolybutoxy)phenyl)propane, and 2,2-bis(4-(acryloxypolyethoxypolypropoxy)phenyl)propane. Among them, 2,2-bis(4-(acryloxypolyethoxy)phenyl)propane is preferred because it further improves pattern formation properties.
지환식 골격을 갖는 아크릴레이트로서는, 탄소수 5~20의 지환식 탄화 수소기를 갖는 아크릴레이트를 이용할 수 있다. 지환식 골격으로서는, 예를 들면, 사이클로펜테인, 사이클로헥세인, 사이클로옥테인, 사이클로데케인, 노보네인, 다이사이클로펜테인, 및 트라이사이클로데케인을 들 수 있다. 이들 중에서도, 박리 특성을 보다 향상시키는 점에서, 아크릴레이트 화합물은, 트라이사이클로데케인 골격을 갖는 아크릴레이트여도 된다. 지환식 골격을 갖는 아크릴레이트로서, 예를 들면, 다이사이클로펜텐일아크릴레이트, 다이사이클로펜텐일아크릴레이트, 다이사이클로펜텐일옥시에틸아크릴레이트, 사이클로헥실아크릴레이트, 사이클로헥실다이아크릴레이트, 및 트라이사이클로데케인다이메탄올다이아크릴레이트를 들 수 있다. 트라이사이클로데케인다이메탄올다이아크릴레이트의 시판품으로서는, 예를 들면, A-DCP(트라이사이클로데케인다이메탄올다이아크릴레이트, 신나카무라 가가쿠 고교 주식회사제)를 들 수 있다.As an acrylate having an alicyclic skeleton, an acrylate having an alicyclic hydrocarbon group having 5 to 20 carbon atoms can be used. Examples of the alicyclic skeleton include cyclopentane, cyclohexane, cyclooctane, cyclodecane, norbornene, dicyclopentane, and tricyclodecane. Among these, the acrylate compound may be an acrylate having a tricyclodecane skeleton in order to further improve the peeling properties. Acrylates having an alicyclic skeleton include, for example, dicyclopentenyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, cyclohexyl acrylate, cyclohexyl diacrylate, and tricyclopentenyl acrylate. Decane dimethanol diacrylate can be mentioned. Examples of commercially available products of tricyclodecane dimethanol diacrylate include A-DCP (tricyclodecane dimethanol diacrylate, manufactured by Shinnakamura Chemical Industry Co., Ltd.).
프탈산 골격을 갖는 아크릴레이트로서는, 예를 들면, γ-클로로-β-하이드록시프로필-β'-아크릴로일옥시에틸-o-프탈레이트, β-하이드록시에틸-β'-아크릴로일옥시에틸-o-프탈레이트, 및, β-하이드록시프로필-β'-아크릴로일옥시에틸-o-프탈레이트를 들 수 있다.Acrylates having a phthalic acid skeleton include, for example, γ-chloro-β-hydroxypropyl-β'-acryloyloxyethyl-o-phthalate, β-hydroxyethyl-β'-acryloyloxyethyl- o-phthalate, and β-hydroxypropyl-β'-acryloyloxyethyl-o-phthalate.
노닐페녹시폴리에틸렌옥시아크릴레이트로서는, 예를 들면, 노닐페녹시테트라에틸렌옥시아크릴레이트, 노닐페녹시펜타에틸렌옥시아크릴레이트, 노닐페녹시헥사에틸렌옥시아크릴레이트, 노닐페녹시헵타에틸렌옥시아크릴레이트, 노닐페녹시옥타에틸렌옥시아크릴레이트, 노닐페녹시노나에틸렌옥시아크릴레이트, 노닐페녹시데카에틸렌옥시아크릴레이트, 및 노닐페녹시운데카에틸렌옥시아크릴레이트를 들 수 있다.Nonylphenoxypolyethyleneoxyacrylate includes, for example, nonylphenoxytetraethyleneoxyacrylate, nonylphenoxypentaethyleneoxyacrylate, nonylphenoxyhexaethyleneoxyacrylate, nonylphenoxyheptaethyleneoxyacrylate, and nonylphenoxyheptaethyleneoxyacrylate. Examples include phenoxyoctaethyleneoxyacrylate, nonylphenoxynonaethyleneoxyacrylate, nonylphenoxydecaethyleneoxyacrylate, and nonylphenoxyundecaethyleneoxyacrylate.
(B) 성분은, 패턴 형성성과 박리 특성의 밸런스를 보다 향상시키는 점에서, 아크릴레이트 화합물로서, 아크릴로일기를 2개 갖는 다이아크릴레이트를 포함하는 것이 바람직하고, 비스페놀 골격 또는 지환식 골격을 갖는 다이아크릴레이트를 포함하는 것이 보다 바람직하다.In order to further improve the balance between pattern formation and peeling properties, the component (B) preferably contains a diacrylate having two acryloyl groups as an acrylate compound, and has a bisphenol skeleton or an alicyclic skeleton. It is more preferable to include diacrylate.
(B) 성분은, 메타크릴레이트 화합물을 더 포함해도 된다. 메타크릴레이트 화합물로서는, 예를 들면, 다가 알코올 유래의 골격을 갖는 메타크릴레이트, 유레테인 결합을 갖는 메타크릴레이트, 비스페놀 골격을 갖는 메타크릴레이트, 지환식 골격을 갖는 메타크릴레이트, 프탈산 골격을 갖는 메타크릴레이트, 노닐페녹시폴리에틸렌옥시메타크릴레이트, 및 메타크릴산 알킬에스터를 들 수 있다. 메타크릴레이트 화합물로서, 상술한 아크릴레이트 화합물의 아크릴로일기를 메타크릴로일기로 변경한 화합물을 이용할 수 있다. 메타크릴레이트 화합물은, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.(B) Component may further contain a methacrylate compound. Examples of methacrylate compounds include methacrylate with a polyhydric alcohol-derived skeleton, methacrylate with a urethane bond, methacrylate with a bisphenol skeleton, methacrylate with an alicyclic skeleton, and phthalic acid skeleton. Examples include methacrylate, nonylphenoxypolyethyleneoxymethacrylate, and methacrylic acid alkyl ester. As a methacrylate compound, a compound obtained by changing the acryloyl group of the above-mentioned acrylate compound to a methacryloyl group can be used. Methacrylate compounds can be used individually or in combination of two or more types.
(B) 성분에 포함되는 아크릴레이트 화합물의 양은, (B) 성분의 총량을 기준으로 하여, 레지스트 패턴의 박리 시간을 단축시키는 점에서, 5질량% 이상인 것이 바람직하고, 10질량% 이상, 15질량% 이상, 또는 20질량% 이상이어도 되며, 레지스트 패턴의 해상도를 향상시키는 점에서, 85질량% 이하인 것이 바람직하고, 80질량% 이하, 75질량% 이하, 또는 70질량% 이하여도 된다.The amount of the acrylate compound contained in component (B) is preferably 5% by mass or more, 10% by mass or more, 15% by mass, based on the total amount of component (B), in order to shorten the peeling time of the resist pattern. % or more, or 20 mass% or more, and in terms of improving the resolution of the resist pattern, it is preferably 85 mass% or less, and may be 80 mass% or less, 75 mass% or less, or 70 mass% or less.
((C) 광중합 개시제)((C) Photopolymerization initiator)
(C) 광중합 개시제(이하, "(C) 성분"이라고도 한다)로서는, (B) 성분을 중합시킬 수 있는 것이면, 특별히 제한은 없고, 통상 이용되는 광중합 개시제로부터 적절히 선택할 수 있다. (C) 성분은, 감도 및 해상도를 양호한 밸런스로 향상시키는 점에서, 헥사아릴바이이미다졸 유도체, 또는, 아크리딘일기를 하나 이상 갖는 아크리딘 화합물을 포함해도 된다. (C) 성분은, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.(C) The photopolymerization initiator (hereinafter also referred to as "component (C)") is not particularly limited as long as it can polymerize component (B), and can be appropriately selected from commonly used photopolymerization initiators. Component (C) may contain a hexaarylbiimidazole derivative or an acridine compound having one or more acridinyl groups in order to improve sensitivity and resolution with a good balance. (C) Component can be used individually or in combination of 2 or more types.
헥사아릴바이이미다졸 유도체로서는, 예를 들면, 2-(o-클로로페닐)-4,5-다이페닐바이이미다졸, 2,2',5-트리스-(o-클로로페닐)-4-(3,4-다이메톡시페닐)-4',5'-다이페닐바이이미다졸, 2,4-비스-(o-클로로페닐)-5-(3,4-다이메톡시페닐)-다이페닐바이이미다졸, 2,4,5-트리스-(o-클로로페닐)-다이페닐바이이미다졸, 2-(o-클로로페닐)-비스-4,5-(3,4-다이메톡시페닐)-바이이미다졸, 2,2'-비스-(2-플루오로페닐)-4,4',5,5'-테트라키스-(3-메톡시페닐)-바이이미다졸, 2,2'-비스-(2,3-다이플루오로메틸페닐)-4,4',5,5'-테트라키스-(3-메톡시페닐)-바이이미다졸, 2,2'-비스-(2,4-다이플루오로페닐)-4,4',5,5'-테트라키스-(3-메톡시페닐)-바이이미다졸, 및 2,2'-비스-(2,5-다이플루오로페닐)-4,4',5,5'-테트라키스-(3-메톡시페닐)-바이이미다졸을 들 수 있다.Examples of hexaarylbiimidazole derivatives include 2-(o-chlorophenyl)-4,5-diphenylbiimidazole, 2,2',5-tris-(o-chlorophenyl)-4-( 3,4-dimethoxyphenyl)-4',5'-diphenylbiimidazole, 2,4-bis-(o-chlorophenyl)-5-(3,4-dimethoxyphenyl)-diphenyl Biimidazole, 2,4,5-tris-(o-chlorophenyl)-diphenylbiimidazole, 2-(o-chlorophenyl)-bis-4,5-(3,4-dimethoxyphenyl) -Biimidazole, 2,2'-bis-(2-fluorophenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, 2,2'- Bis-(2,3-difluoromethylphenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,4- Difluorophenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, and 2,2'-bis-(2,5-difluorophenyl)- and 4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole.
아크리딘 화합물로서는, 예를 들면, 9-페닐아크리딘, 9-(p-메틸페닐)아크리딘, 9-(m-메틸페닐)아크리딘, 9-(p-클로로페닐)아크리딘, 9-(m-클로로페닐)아크리딘, 9-아미노아크리딘, 9-다이메틸아미노아크리딘, 9-다이에틸아미노아크리딘, 9-펜틸아미노아크리딘, 1,2-비스(9-아크리딘일)에테인, 1,4-비스(9-아크리딘일)뷰테인, 1,6-비스(9-아크리딘일)헥세인, 1,8-비스(9-아크리딘일)옥테인, 1,10-비스(9-아크리딘일)데케인, 1,12-비스(9-아크리딘일)도데케인, 1,14-비스(9-아크리딘일)테트라데케인, 1,16-비스(9-아크리딘일)헥사데케인, 1,18-비스(9-아크리딘일)옥타데케인, 1,20-비스(9-아크리딘일)에이코세인, 1,3-비스(9-아크리딘일)-2-옥사프로페인, 1,3-비스(9-아크리딘일)-2-싸이아프로페인, 및 1,5-비스(9-아크리딘일)-3-싸이아펜테인을 들 수 있다.Examples of acridine compounds include 9-phenylacridine, 9-(p-methylphenyl)acridine, 9-(m-methylphenyl)acridine, and 9-(p-chlorophenyl)acridine. , 9-(m-chlorophenyl)acridine, 9-aminoacridine, 9-dimethylaminoacridine, 9-diethylaminoacridine, 9-pentylaminoacridine, 1,2- Bis(9-acridinyl)ethane, 1,4-bis(9-acridinyl)butane, 1,6-bis(9-acridinyl)hexane, 1,8-bis(9-acrylate) dinyl)octane, 1,10-bis(9-acridinyl)decane, 1,12-bis(9-acridinyl)dodecane, 1,14-bis(9-acridinyl)tetradecane , 1,16-bis (9-acridinyl) hexadecane, 1,18-bis (9-acridinyl) octadecane, 1,20-bis (9-acridinyl) eicosane, 1, 3-bis(9-acridinyl)-2-oxapropane, 1,3-bis(9-acridinyl)-2-thiapropane, and 1,5-bis(9-acridinyl)- 3-Thiapentane may be mentioned.
(C) 성분의 함유량은, (A) 성분 및 (B) 성분의 총량 100질량부에 대하여, 0.5~10질량부, 1~8질량부, 또는, 2~5질량부여도 된다. (C) 성분의 함유량이 0.5질량부 이상에서는, 광감도, 해상도 및 밀착성이 향상되는 경향이 있으며, 10질량부 이하에서는, 레지스트 패턴 형성성이 보다 우수한 경향이 있다.The content of component (C) may be 0.5 to 10 parts by mass, 1 to 8 parts by mass, or 2 to 5 parts by mass, based on 100 parts by mass of the total amount of component (A) and component (B). When the content of component (C) is 0.5 parts by mass or more, photosensitivity, resolution, and adhesion tend to improve, and when it is 10 parts by mass or less, resist pattern formation tends to be more excellent.
((D) 중합 금지제)((D) Polymerization inhibitor)
본 실시형태에 관한 감광성 수지 필름은, (D) 중합 금지제(이하, "(D) 성분"이라고도 한다)를 함유함으로써, 패턴 형성성을 향상시킬 수 있다. (D) 성분은, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.The photosensitive resin film according to this embodiment can improve pattern formation by containing (D) a polymerization inhibitor (hereinafter also referred to as "component (D)"). (D) Component can be used individually by 1 type or in combination of 2 or more types.
(D) 성분은, 패턴 형성성을 더 향상시키는 견지에서, 하기 식 (I)로 나타나는 화합물을 포함해도 된다.The component (D) may contain a compound represented by the following formula (I) from the viewpoint of further improving pattern formation properties.
[화학식 1][Formula 1]
식 (I) 중, R5는, 할로젠 원자, 수소 원자, 탄소수 1~20의 알킬기, 탄소수 3~10의 사이클로알킬기, 아미노기, 아릴기, 머캅토기, 탄소수 1~10의 알킬머캅토기, 알킬기의 탄소수가 1~10인 카복실알킬기, 탄소수 1~20의 알콕시기, 또는 복소환기를 나타낸다. m 및 n은, m이 2 이상의 정수이고, n이 0 이상의 정수이며, m+n=6이 되도록 선택되는 정수이다. n이 2 이상의 정수의 경우, R5는 각각 동일해도 되고 상이해도 된다. 또한, 아릴기는, 탄소수 1~20의 알킬기로 치환되어 있어도 된다.In formula (I), R 5 is a halogen atom, a hydrogen atom, an alkyl group with 1 to 20 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an amino group, an aryl group, a mercapto group, an alkylmercapto group with 1 to 10 carbon atoms, The alkyl group represents a carboxyl alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a heterocyclic group. m and n are integers selected so that m is an integer of 2 or more, n is an integer of 0 or more, and m+n=6. When n is an integer of 2 or more, R 5 may be the same or different. Additionally, the aryl group may be substituted with an alkyl group having 1 to 20 carbon atoms.
R5는, (A) 성분과의 상용성을 보다 향상시키는 견지에서, 수소 원자 또는 탄소수 1~20의 알킬기여도 된다. R5로 나타나는 탄소수 1~20의 알킬기로서는, 탄소수 1~4의 알킬기여도 된다. m은, 해상도를 더 향상시키는 견지에서, 2 또는 3이어도 되고, 2여도 된다.R 5 may be a hydrogen atom or an alkyl group having 1 to 20 carbon atoms from the viewpoint of further improving compatibility with component (A). The alkyl group having 1 to 20 carbon atoms represented by R 5 may be an alkyl group having 1 to 4 carbon atoms. From the viewpoint of further improving resolution, m may be 2 or 3, or may be 2.
상기 일반식 (I)로 나타나는 화합물로서는, 예를 들면, 카테콜, 2-메틸카테콜, 3-메틸카테콜, 4-메틸카테콜, 2-에틸카테콜, 3-에틸카테콜, 4-에틸카테콜, 2-프로필카테콜, 3-프로필카테콜, 4-프로필카테콜, 2-n-뷰틸카테콜, 3-n-뷰틸카테콜, 4-n-뷰틸카테콜, 2-tert-뷰틸카테콜, 3-tert-뷰틸카테콜, 4-tert-뷰틸카테콜, 3,5-다이-tert-뷰틸카테콜 등의 카테콜 화합물; 레조시놀(레조신), 2-메틸레조시놀, 4-메틸레조시놀, 5-메틸레조시놀(오르신), 2-에틸레조시놀, 4-에틸레조시놀, 2-프로필레조시놀, 4-프로필레조시놀, 2-n-뷰틸레조시놀, 4-n-뷰틸레조시놀, 2-tert-뷰틸레조시놀, 4-tert-뷰틸레조시놀 등의 레조시놀 화합물; 1,4-하이드로퀴논, 메틸하이드로퀴논, 에틸하이드로퀴논, 프로필하이드로퀴논, tert-뷰틸하이드로퀴논, 2,5-다이-tert-뷰틸하이드로퀴논 등의 하이드로퀴논 화합물; 및 파이로갈롤, 플로로글루시놀 등의 3가 페놀 화합물을 들 수 있다.Compounds represented by the general formula (I) include, for example, catechol, 2-methylcatechol, 3-methylcatechol, 4-methylcatechol, 2-ethylcatechol, 3-ethylcatechol, 4- Ethylcatechol, 2-propylcatechol, 3-propylcatechol, 4-propylcatechol, 2-n-butylcatechol, 3-n-butylcatechol, 4-n-butylcatechol, 2-tert- Catechol compounds such as butylcatechol, 3-tert-butylcatechol, 4-tert-butylcatechol, and 3,5-di-tert-butylcatechol; Resorcinol (Resorcinol), 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol (Orsine), 2-ethylresorcinol, 4-ethylresorcinol, 2-propylreso Resorcinol such as cinol, 4-propylresorcinol, 2-n-butylresorcinol, 4-n-butylresorcinol, 2-tert-butylresorcinol, and 4-tert-butylresorcinol compound; Hydroquinone compounds such as 1,4-hydroquinone, methylhydroquinone, ethylhydroquinone, propylhydroquinone, tert-butylhydroquinone, and 2,5-di-tert-butylhydroquinone; and trihydric phenol compounds such as pyrogallol and phloroglucinol.
(D) 성분은, 해상도를 향상시키는 점에서, 카테콜 화합물을 포함해도 된다. 카테콜 화합물로서는, 2-메틸카테콜, 3-메틸카테콜, 4-메틸카테콜, 2-에틸카테콜, 3-에틸카테콜, 4-에틸카테콜, 2-프로필카테콜, 3-프로필카테콜, 4-프로필카테콜, 2-n-뷰틸카테콜, 3-n-뷰틸카테콜, 4-n-뷰틸카테콜, 2-tert-뷰틸카테콜, 3-tert-뷰틸카테콜, 4-tert-뷰틸카테콜, 3,5-다이-tert-뷰틸카테콜 등의 알킬카테콜이 바람직하고, 3-tert-뷰틸카테콜, 4-tert-뷰틸카테콜, 또는 3,5-다이-tert-뷰틸카테콜이 보다 바람직하다.(D) Component may contain a catechol compound since it improves resolution. Catechol compounds include 2-methylcatechol, 3-methylcatechol, 4-methylcatechol, 2-ethylcatechol, 3-ethylcatechol, 4-ethylcatechol, 2-propylcatechol, and 3-propylcatechol. Catechol, 4-propylcatechol, 2-n-butylcatechol, 3-n-butylcatechol, 4-n-butylcatechol, 2-tert-butylcatechol, 3-tert-butylcatechol, 4 Alkylcatechols such as -tert-butylcatechol and 3,5-di-tert-butylcatechol are preferred, and 3-tert-butylcatechol, 4-tert-butylcatechol, or 3,5-di- tert-butylcatechol is more preferred.
(D) 성분의 함유량은, (A) 성분 및 (B) 성분의 총량 100질량부에 대하여 0.010~0.30질량부, 0.015~0.20질량부, 또는 0.020~0.10질량부여도 된다. (D) 성분의 함유량을 0.30질량부 이하로 함으로써, 노광 시간을 짧게 할 수 있다. (D) 성분의 함유량을 0.010질량부 이상으로 함으로써, 광경화부의 광반응을 충분히 진행시킬 수 있고, 패턴 형성성을 보다 높일 수 있다.The content of component (D) may be 0.010 to 0.30 parts by mass, 0.015 to 0.20 parts by mass, or 0.020 to 0.10 parts by mass with respect to 100 parts by mass of the total amount of component (A) and component (B). By setting the content of the component (D) to 0.30 parts by mass or less, the exposure time can be shortened. By setting the content of component (D) to 0.010 parts by mass or more, the photoreaction in the photocurable portion can sufficiently proceed and pattern formation can be further improved.
(그 외의 성분)(Other ingredients)
본 실시형태에 관한 감광성 수지 조성물에는, 필요에 따라, 증감제, 염료, 광발색제, 발열색 방지제, 가소제, 안료, 충전제, 소포제, 난연제, 밀착성 부여제, 레벨링제, 박리 촉진제, 산화 방지제, 향료, 이미징제, 열가교제, 중합 금지제 등의 첨가제를 더 함유해도 된다. 이들 첨가제는, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다.The photosensitive resin composition according to the present embodiment may contain, if necessary, a sensitizer, dye, photochromic agent, anti-chromic agent, plasticizer, pigment, filler, anti-foaming agent, flame retardant, adhesion imparting agent, leveling agent, peeling accelerator, antioxidant, and fragrance. , it may further contain additives such as an imaging agent, a thermal crosslinking agent, and a polymerization inhibitor. These additives can be used individually or in combination of two or more types.
증감제로서는, 예를 들면, 다이알킬아미노벤조페논 화합물, 피라졸린 화합물, 안트라센 화합물, 쿠마린 화합물, 잔톤 화합물, 싸이오잔톤 화합물, 옥사졸 화합물, 벤즈옥사졸 화합물, 싸이아졸 화합물, 벤조싸이아졸 화합물, 트라이아졸 화합물, 스틸벤 화합물, 트라이아진 화합물, 싸이오펜 화합물, 나프탈이미드 화합물, 트라이아릴아민 화합물, 및 아미노아크리딘 화합물을 들 수 있다.As sensitizers, for example, dialkylaminobenzophenone compounds, pyrazoline compounds, anthracene compounds, coumarin compounds, xanthone compounds, thioxanthone compounds, oxazole compounds, benzoxazole compounds, thiazole compounds, and benzothiazole compounds. , triazole compounds, stilbene compounds, triazine compounds, thiophene compounds, naphthalimide compounds, triarylamine compounds, and aminoacridine compounds.
증감제의 함유량은, 광감도 및 해상도를 향상시키는 점에서, (A) 성분 및 (B) 성분의 총량 100질량부에 대하여, 0.01~1질량부, 0.02~0.5질량부, 0.03~0.2질량부, 또는 0.04~0.1질량부여도 된다.In terms of improving photosensitivity and resolution, the content of the sensitizer is 0.01 to 1 part by mass, 0.02 to 0.5 part by mass, 0.03 to 0.2 part by mass, based on 100 parts by mass of the total amount of component (A) and component (B). Alternatively, 0.04 to 0.1 mass may be assigned.
염료로서는, 예를 들면, 말라카이트 그린, 빅토리아 퓨어 블루, 브릴리언트 그린, 및 메틸 바이올렛을 들 수 있다. 광발색제로서는, 예를 들면, 트라이브로모페닐설폰, 류코 크리스탈 바이올렛, 다이페닐아민, 벤질아민, 트라이페닐아민, 다이에틸아닐린, 및 o-클로로아닐린을 들 수 있다. 가소제로서는, 예를 들면, p-톨루엔설폰아마이드를 들 수 있다.Examples of dyes include malachite green, Victoria pure blue, brilliant green, and methyl violet. Examples of photochromic agents include tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline. Examples of the plasticizer include p-toluenesulfonamide.
도 1은, 감광성 수지 필름의 일 실시형태를 나타내는 모식 단면도이다. 본 실시형태에 관한 감광성 수지 필름(1)은, 상술한 감광성 수지 조성물을 이용하여 지지 필름(2) 상에 형성해도 된다. 본 실시형태에 관한 감광성 수지 필름은, 도 1에 나타내는 바와 같이 지지 필름(2)과, 지지 필름(2) 상에 마련된 감광성 수지 필름(1)을 구비하는 감광성 엘리먼트의 형태로 이용할 수 있다.1 is a schematic cross-sectional view showing one embodiment of a photosensitive resin film. The photosensitive resin film 1 according to the present embodiment may be formed on the support film 2 using the photosensitive resin composition described above. The photosensitive resin film according to this embodiment can be used in the form of a photosensitive element provided with a support film 2 and a photosensitive resin film 1 provided on the support film 2, as shown in FIG. 1.
감광성 수지 필름(1)의 두께는, 35~300μm이다. 애스펙트비가 높은 배선 패턴 형성성의 관점에서, 감광성 수지 필름(1)의 두께는, 40μm 이상, 45μm 이상, 또는 50μm 이상이어도 된다. 감광성 수지 필름의 박리성의 관점에서, 감광성 수지 필름(1)의 두께는, 250μm 이하, 200μm 이하, 또는 150μm 이하여도 된다.The thickness of the photosensitive resin film 1 is 35 to 300 μm. From the viewpoint of forming a wiring pattern with a high aspect ratio, the thickness of the photosensitive resin film 1 may be 40 μm or more, 45 μm or more, or 50 μm or more. From the viewpoint of the peelability of the photosensitive resin film, the thickness of the photosensitive resin film 1 may be 250 μm or less, 200 μm or less, or 150 μm or less.
지지 필름으로서는, 예를 들면, 폴리에틸렌테레프탈레이트(PET), 폴리뷰틸렌테레프탈레이트(PBT), 폴리에틸렌-2,6-나프탈레이트(PEN) 등의 폴리에스터 필름, 및 폴리프로필렌, 폴리에틸렌 등의 폴리올레핀 필름을 들 수 있다.Examples of the support film include polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene-2,6-naphthalate (PEN), and polyolefin films such as polypropylene and polyethylene. can be mentioned.
지지 필름의 헤이즈(Haze)는, 0.01~5.0%, 0.01~1.5%, 0.01~1.0%, 또는 0.01~0.5%여도 된다. 헤이즈는, JIS K7105에 규정되는 방법에 준거하여, 시판 중인 혼탁도계(탁도계)를 이용하여 측정된 값을 말한다. 헤이즈는, 예를 들면, NDH-5000(닛폰 덴쇼쿠 고교 주식회사제, 상품명) 등의 시판 중인 탁도계로 측정이 가능하다.The haze of the support film may be 0.01 to 5.0%, 0.01 to 1.5%, 0.01 to 1.0%, or 0.01 to 0.5%. Haze refers to a value measured using a commercially available turbidity meter (turbidity meter) based on the method specified in JIS K7105. Haze can be measured, for example, with a commercially available turbidity meter such as NDH-5000 (manufactured by Nippon Denshoku Kogyo Co., Ltd., brand name).
지지 필름의 두께는, 1~200μm, 1~100μm, 1~60μm, 5~60μm, 10~60μm, 10~50μm, 10~40μm, 10~30μm, 또는 10~25μm여도 된다. 지지 필름의 두께가 1μm 이상임으로써, 지지 필름을 박리할 때에 지지 필름이 찢어지는 것을 억제할 수 있는 경향이 있다. 또, 지지 필름의 두께가 200μm 이하임으로써, 경제적 혜택을 얻기 쉬운 경향이 있다.The thickness of the support film may be 1 to 200 μm, 1 to 100 μm, 1 to 60 μm, 5 to 60 μm, 10 to 60 μm, 10 to 50 μm, 10 to 40 μm, 10 to 30 μm, or 10 to 25 μm. When the thickness of the support film is 1 μm or more, tearing of the support film tends to be suppressed when peeling off the support film. Additionally, when the thickness of the support film is 200 μm or less, it tends to be easy to obtain economic benefits.
감광성 수지 필름(1)의 지지 필름(2)과 반대 측의 면에는, 보호 필름을 적층해도 된다. 보호 필름으로서는, 폴리에틸렌, 폴리프로필렌 등의 중합체 필름을 이용해도 된다. 지지 필름과 동일한 중합체 필름을 이용해도 되고, 상이한 중합체 필름을 이용해도 된다. 보호 필름과 감광성 수지 필름(1)의 접착력이, 지지 필름(2)과 감광성 수지 필름(1)의 접착력보다 작은 편이 바람직하다.A protective film may be laminated on the surface of the photosensitive resin film 1 opposite to the support film 2. As a protective film, a polymer film such as polyethylene or polypropylene may be used. The same polymer film as the support film may be used, or a different polymer film may be used. It is preferable that the adhesive force between the protective film and the photosensitive resin film 1 is smaller than the adhesive force between the support film 2 and the photosensitive resin film 1.
감광성 수지 필름(1)은, 예를 들면, 지지 필름(2) 상에 감광성 수지 조성물을 도포한 후, 건조하여 형성할 수 있다. 도포는, 예를 들면, 롤 코트, 콤마 코트, 그라비어 코트, 에어 나이프 코트, 다이 코트, 바 코트 등의 공지의 방법을 이용하여 행할 수 있다. 건조는, 70~150℃, 5~30분간 정도로 행할 수 있다.The photosensitive resin film 1 can be formed, for example, by applying the photosensitive resin composition on the support film 2 and then drying it. Application can be performed using known methods such as roll coat, comma coat, gravure coat, air knife coat, die coat, and bar coat, for example. Drying can be performed at 70 to 150°C for about 5 to 30 minutes.
지지 필름(2) 상에 감광성 수지 조성물을 도포할 때, 필요에 따라, 감광성 수지 조성물에 용제를 첨가하여 고형분이 30~60질량% 정도인 용액을 이용해도 된다. 용제로서는, 예를 들면, 메탄올, 에탄올, 아세톤, 메틸에틸케톤, 메틸셀로솔브, 에틸셀로솔브, 톨루엔, N,N-다이메틸폼아마이드, 및 프로필렌글라이콜모노메틸에터를 들 수 있다. 용제는, 1종을 단독으로 또는 2종 이상을 조합하여 이용할 수 있다. 이 경우, 감광성 수지 필름 중의 잔존 용제량은, 후속 공정에서의 용제의 확산을 방지하기 위하여, 2질량% 이하로 하는 것이 바람직하다.When applying the photosensitive resin composition on the support film 2, a solvent may be added to the photosensitive resin composition as needed, and a solution having a solid content of about 30 to 60% by mass may be used. Examples of solvents include methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, and propylene glycol monomethyl ether. there is. Solvents can be used individually or in combination of two or more types. In this case, the amount of residual solvent in the photosensitive resin film is preferably 2% by mass or less to prevent diffusion of the solvent in subsequent processes.
감광성 엘리먼트의 형태는 특별히 제한되지 않는다. 예를 들면, 시트상이어도 되고, 권취 코어에 롤상으로 권취한 형상이어도 된다. 롤상으로 권취하는 경우, 지지 필름이 외측이 되도록 권취해도 된다. 권취 코어로서는, 예를 들면, 폴리에틸렌 수지, 폴리프로필렌 수지, 폴리스타이렌 수지, 폴리 염화 바이닐 수지, 또는 ABS 수지(아크릴로나이트릴-뷰타다이엔-스타이렌 공중합체) 등의 플라스틱을 들 수 있다.The form of the photosensitive element is not particularly limited. For example, it may be in the form of a sheet or may be wound in a roll shape around a core. When winding up in roll shape, you may wind up so that the support film faces the outside. Examples of the winding core include plastic such as polyethylene resin, polypropylene resin, polystyrene resin, polyvinyl chloride resin, or ABS resin (acrylonitrile-butadiene-styrene copolymer).
롤상의 감광성 엘리먼트의 단면에는, 단면 보호의 점에서 단면 세퍼레이터를 설치해도 되고, 내(耐)에지 퓨전의 점에서 방습 단면 세퍼레이터를 설치해도 된다. 감광성 엘리먼트는, 투습성이 작은 블랙 시트로 싸서 포장해도 된다.A single-sided separator may be provided on the end face of the roll-shaped photosensitive element from the point of view of end-face protection, or a moisture-proof end-side separator may be provided from the point of view of edge fusion resistance. The photosensitive element may be wrapped and packaged in a black sheet with low moisture permeability.
본 실시형태에 관한 감광성 수지 필름은, 우수한 패턴 형성성을 갖고 있는 점에서, 애스펙트비가 높은 레지스트 패턴을 형성할 수 있다.Since the photosensitive resin film according to this embodiment has excellent pattern formation properties, it can form a resist pattern with a high aspect ratio.
[레지스트 패턴의 형성 방법][Method of forming resist pattern]
본 실시형태에 관한 레지스트 패턴의 형성 방법은, 기판 상에, 상술한 감광성 수지 필름을 이용하여 감광층을 마련하는 공정(이하, "감광층 형성 공정"이라고도 한다.)과, 감광층의 적어도 일부에 활성광선을 조사하여, 광경화부를 형성하는 공정(이하, "노광 공정"이라고도 한다.)과, 감광층의 광경화부 이외의 적어도 일부를 제거하여, 레지스트 패턴을 형성하는 공정(이하, "현상 공정"이라고도 한다.)을 구비한다. 레지스트 패턴이란, 감광성 수지 필름의 광경화물 패턴이라고도 할 수 있으며, 릴리프 패턴이라고도 할 수 있다. 또, 레지스트 패턴의 형성 방법은, 레지스트 패턴 포함 기판의 제조 방법이라고도 할 수 있다.The resist pattern forming method according to the present embodiment includes a step of providing a photosensitive layer on a substrate using the photosensitive resin film described above (hereinafter also referred to as a “photosensitive layer forming step”), and at least a portion of the photosensitive layer. A process of forming a photocured portion by irradiating actinic rays (hereinafter also referred to as “exposure process”), and a process of forming a resist pattern by removing at least part of the photosensitive layer other than the photocured portion (hereinafter referred to as “development process”). Also referred to as “process”). A resist pattern can be referred to as a photocured product pattern of a photosensitive resin film, and can also be referred to as a relief pattern. Additionally, the method of forming a resist pattern can also be referred to as a method of manufacturing a substrate containing a resist pattern.
감광층 형성 공정에 있어서는, 상기 감광성 엘리먼트를 이용하는 경우, 감광성 엘리먼트가 보호 필름을 가질 때에는 이것을 제거하고 나서, 감광성 수지 필름을 70~130℃ 정도로 가열하면서, 감압하 또는 상압하에서, 기판에 0.1~1MPa 정도(1~10kgf/cm2 정도)의 압력으로 압착하고 적층하여, 기판 상에 감광층을 형성한다. 기판으로서는, 예를 들면, 유리 섬유 강화 에폭시 수지 등의 절연성 재료로 이루어지는 층의 편면 또는 양면에 구리박을 마련한 구리 피복 적층판이 이용된다.In the photosensitive layer formation process, when using the photosensitive element, if the photosensitive element has a protective film, this is removed, and then the photosensitive resin film is heated to about 70 to 130°C, and 0.1 to 1 MPa is applied to the substrate under reduced or normal pressure. A photosensitive layer is formed on the substrate by pressing and stacking with a pressure of about 1 to 10 kgf/cm 2 . As a substrate, for example, a copper-clad laminate in which copper foil is provided on one or both sides of a layer made of an insulating material such as glass fiber reinforced epoxy resin is used.
노광 공정에 있어서는, 지지 필름을 제거하여, 또는 지지 필름을 개재하여 감광층을 활성광선에 의하여 노광한다. 노광 방법으로서는, 아트워크로 불리는 네거티브 또는 포지티브 마스크 패턴을 통하여 활성광선을 화상 형상으로 조사하는 방법(마스크 노광법), 투영 노광법에 의하여 활성광선을 화상 형상으로 조사하는 방법, LDI(Laser Direct Imaging) 노광법, DLP(Digital Light Processing) 노광법 등의 직접 묘화 노광법에 의하여 활성광선을 화상 형상으로 조사하는 방법을 들 수 있다.In the exposure process, the support film is removed, or the photosensitive layer is exposed to actinic light through the support film. Exposure methods include a method of irradiating actinic rays in an image shape through a negative or positive mask pattern called artwork (mask exposure method), a method of irradiating actinic rays in an image shape by a projection exposure method, and LDI (Laser Direct Imaging). ) A method of irradiating actinic rays in the form of an image by a direct drawing exposure method such as an exposure method or a DLP (Digital Light Processing) exposure method is included.
활성광선의 광원으로서는, 공지의 광원을 이용할 수 있으며, 예를 들면, 카본 아크등, 수은 증기 아크등, 고압 수은등, 제논 램프, 아르곤 레이저 등의 가스 레이저, YAG 레이저 등의 고체 레이저, 반도체 레이저 등의 자외선, 가시광을 유효하게 방사하는 것이 이용된다.As a light source of actinic light, a known light source can be used, for example, a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, a xenon lamp, a gas laser such as an argon laser, a solid laser such as a YAG laser, a semiconductor laser, etc. Those that effectively radiate ultraviolet rays and visible light are used.
밀착성 향상의 관점에서, 노광 후, 현상 전에 노광 후 가열(PEB: Post exposure bake)을 행해도 된다. PEB를 행하는 경우의 온도는 50~100℃여도 된다. 가열기로서는, 핫플레이트, 상자형 건조기, 가열 롤 등을 이용해도 된다.From the viewpoint of improving adhesion, post-exposure heating (PEB: Post bake exposure) may be performed after exposure and before development. The temperature when performing PEB may be 50 to 100°C. As a heater, a hot plate, box-type dryer, heating roll, etc. may be used.
현상 공정에 있어서는, 상기 감광층의 광경화부 이외의 적어도 일부가 기판 상으로부터 제거됨으로써, 레지스트 패턴이 기판 상에 형성된다.In the development process, at least part of the photosensitive layer other than the photocured portion is removed from the substrate, thereby forming a resist pattern on the substrate.
감광층 상에 지지 필름이 존재하고 있는 경우에는, 지지 필름을 제거하고 나서, 상기 광경화부 이외의 영역(미노광 부분이라고도 할 수 있다)의 제거(현상)를 행한다. 현상 방법에는, 웨트 현상과 드라이 현상이 있지만, 웨트 현상이 널리 이용되고 있다.When a support film is present on the photosensitive layer, the support film is removed, and then removal (development) of areas other than the photocured portion (which may also be referred to as unexposed portion) is performed. There are two developing methods: wet development and dry development, but wet development is widely used.
웨트 현상에 의한 경우, 감광성 수지 조성물에 대응한 현상액을 이용하여, 공지의 현상 방법에 의하여 현상한다. 현상 방법으로서는, 딥 방식, 퍼들 방식, 스프레이 방식, 브러싱, 슬래핑, 스크러빙, 요동(搖動) 침지 등을 이용한 방법을 들 수 있으며, 해상도를 향상시키는 점에서는, 고압 스프레이 방식을 이용해도 된다. 이들 2종 이상의 방법을 조합하여 현상을 행해도 된다.In the case of wet development, development is performed by a known developing method using a developing solution corresponding to the photosensitive resin composition. Development methods include methods using a dip method, puddle method, spray method, brushing, slapping, scrubbing, oscillation immersion, etc., and in order to improve resolution, a high pressure spray method may be used. Development may be performed by combining two or more of these methods.
현상액의 구성은 상기 감광성 수지 조성물의 구성에 따라 적절히 선택된다. 현상액으로서는, 예를 들면, 알칼리성 수용액 및 유기 용제 현상액 등을 들 수 있다.The composition of the developer is appropriately selected depending on the composition of the photosensitive resin composition. Examples of developing solutions include alkaline aqueous solutions and organic solvent developing solutions.
안전하고 또한 안정적이며, 조작성이 양호한 견지에서, 현상액으로서, 알칼리성 수용액을 이용해도 된다. 알칼리성 수용액의 염기로서는, 예를 들면, 리튬, 나트륨 또는 칼륨의 수산화물 등의 수산화 알칼리; 리튬, 나트륨, 칼륨 또는 암모늄의 탄산염 또는 중탄산염 등의 탄산 알칼리; 인산 칼륨, 인산 나트륨 등의 알칼리 금속 인산염; 파이로인산 나트륨, 파이로인산 칼륨 등의 알칼리 금속 파이로인산염; 붕사, 메타규산 나트륨, 수산화 테트라메틸암모늄, 에탄올아민, 에틸렌다이아민, 다이에틸렌트라이아민, 2-아미노-2-하이드록시메틸-1,3-프로페인다이올, 1,3-다이아미노프로판올-2, 및 모폴린을 들 수 있다.From the standpoint of safety, stability, and good operability, an alkaline aqueous solution may be used as a developer. Examples of the base of the alkaline aqueous solution include alkali hydroxides such as hydroxides of lithium, sodium, or potassium; Alkali carbonates such as carbonates or bicarbonates of lithium, sodium, potassium or ammonium; Alkali metal phosphates such as potassium phosphate and sodium phosphate; Alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; Borax, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diaminopropanol- 2, and morpholine.
현상에 이용하는 알칼리성 수용액으로서는, 예를 들면, 0.1~5질량% 탄산 나트륨 수용액, 0.1~5질량% 탄산 칼륨 수용액, 및 0.1~5질량% 수산화 나트륨 수용액을 들 수 있다. 알칼리성 수용액의 pH는 9~11의 범위로 해도 되고, 알칼리성 수용액의 온도는, 감광층의 현상성에 맞춰 조절할 수 있다.Examples of alkaline aqueous solutions used for development include 0.1 to 5% by mass aqueous sodium carbonate solution, 0.1 to 5% by mass aqueous potassium carbonate solution, and 0.1 to 5% by mass aqueous sodium hydroxide solution. The pH of the alkaline aqueous solution may be in the range of 9 to 11, and the temperature of the alkaline aqueous solution can be adjusted according to the developability of the photosensitive layer.
알칼리성 수용액 중에는, 예를 들면, 표면 활성제, 소포제, 현상을 촉진시키기 위한 소량의 유기 용제 등을 혼입시켜도 된다. 알칼리성 수용액에 이용되는 유기 용제로서는, 예를 들면, 아세톤, 아세트산 에틸, 탄소수 1~4의 알콕시기를 갖는 알콕시에탄올, 에틸알코올, 아이소프로필알코올, 뷰틸알코올, 다이에틸렌글라이콜모노메틸에터, 다이에틸렌글라이콜모노에틸에터, 및 다이에틸렌글라이콜모노뷰틸에터를 들 수 있다. 유기 용제 현상액에 이용되는 유기 용제로서는, 예를 들면, 1,1,1-트라이클로로에테인, N-메틸피롤리돈, N,N-다이메틸폼아마이드, 사이클로헥산온, 메틸아이소뷰틸케톤, 및 γ-뷰티로락톤을 들 수 있다. 유기 용제에는, 인화 방지를 위하여, 1~20질량%의 범위가 되도록 물을 첨가하여 유기 용제 현상액으로 해도 된다.The alkaline aqueous solution may contain, for example, a surface active agent, an antifoaming agent, or a small amount of an organic solvent to promote development. Organic solvents used in alkaline aqueous solutions include, for example, acetone, ethyl acetate, alkoxyethanol having an alkoxy group of 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, and dimethyl alcohol. Examples include ethylene glycol monoethyl ether and diethylene glycol monobutyl ether. Organic solvents Examples of organic solvents used in the developer include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, methylisobutylketone, and Examples include γ-beutyrolactone. To prevent ignition, water may be added to the organic solvent in a range of 1 to 20% by mass to form an organic solvent developer.
본 실시형태에 있어서의 레지스트 패턴의 형성 방법에 있어서는, 현상 공정에 있어서 미경화 부분을 제거한 후, 필요에 따라 60~250℃ 정도에서의 가열 또는 0.2~10J/cm2 정도의 노광을 행함으로써, 레지스트 패턴을 더 경화하는 공정을 포함해도 된다.In the resist pattern formation method in this embodiment, after removing the uncured portion in the development process, heating at about 60 to 250°C or exposure at about 0.2 to 10 J/cm 2 is performed as necessary. A step of further hardening the resist pattern may be included.
[배선 패턴의 형성 방법][Method of forming wiring pattern]
본 실시형태에 관한 배선 패턴의 형성 방법은, 상기 레지스트 패턴의 형성 방법에 의하여 레지스트 패턴이 형성된 기판을 도금 처리하여 도체 패턴을 형성하는 공정과, 도금 처리 후에, 광경화부를 제거하는 공정을 구비한다.The method of forming a wiring pattern according to the present embodiment includes a step of forming a conductor pattern by plating a substrate on which a resist pattern is formed by the above-described resist pattern forming method, and a step of removing a photocured portion after the plating treatment. .
도금 처리에서는, 도체층을 구비한 기판 상에 형성된 레지스트 패턴을 마스크로 하여, 레지스트에 의하여 피복되어 있지 않은 기판의 도체층 상에 구리 또는 땜납 등을 도금한다. 도금 처리 후, 후술하는 레지스트 패턴의 제거에 의하여 레지스트를 제거하고, 추가로 이 레지스트에 의하여 피복되어 있던 도체층을 에칭하여, 도체 패턴을 형성한다.In the plating process, copper, solder, etc. are plated on the conductor layer of the substrate that is not covered with the resist, using the resist pattern formed on the substrate with the conductor layer as a mask. After the plating treatment, the resist is removed by removing the resist pattern described later, and the conductor layer covered by the resist is further etched to form a conductor pattern.
도금 처리의 방법으로서는, 전해 도금 처리여도 되고, 무전해 도금 처리여도 되지만, 그중에서도 무전해 도금 처리여도 된다. 무전해도금 처리로서는, 예를 들면, 황산 구리 도금, 파이로인산 구리 도금 등의 구리 도금, 하이 슬로 땜납 도금 등의 땜납 도금, 와트욕(浴)(황산 니켈-염화 니켈) 도금, 설파제산 니켈 도금 등의 니켈 도금, 하드 금 도금, 소프트 금 도금 등의 금 도금을 들 수 있다.As a method of plating treatment, electrolytic plating treatment or electroless plating treatment may be used, but among these, electroless plating treatment may be used. Electroless plating treatments include, for example, copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high-slow solder plating, Watt bath (nickel sulfate-nickel chloride) plating, and nickel sulfa nitrate. Gold plating such as nickel plating, hard gold plating, and soft gold plating can be mentioned.
상기 도금 처리 후, 기판 상의 레지스트 패턴은 제거된다. 레지스트 패턴의 제거는, 예를 들면, 상기 현상 공정에 이용한 알칼리성 수용액보다 더 강알칼리성의 수용액에 의하여 박리할 수 있다. 강알칼리성의 수용액으로서는, 예를 들면, 1~10질량% 수산화 나트륨 수용액, 1~10질량% 수산화 칼륨 수용액 등이 이용된다. 이들 중에서는, 1~5질량% 수산화 나트륨 수용액 또는 수산화 칼륨 수용액을 이용해도 된다.After the plating process, the resist pattern on the substrate is removed. The resist pattern can be removed, for example, by peeling with an aqueous solution that is stronger alkaline than the alkaline aqueous solution used in the development step. As a strongly alkaline aqueous solution, for example, a 1 to 10% by mass aqueous sodium hydroxide solution, a 1 to 10% by mass aqueous potassium hydroxide solution, etc. are used. Among these, 1 to 5% by mass aqueous sodium hydroxide solution or aqueous potassium hydroxide solution may be used.
도금 처리를 실시하고 나서 레지스트 패턴을 제거한 경우, 추가로 에칭 처리에 의하여 레지스트로 피복되어 있던 도체층을 에칭하고, 도체 패턴을 형성함으로써 원하는 프린트 배선판을 제조할 수 있다. 이때의 에칭 처리의 방법은, 제거해야 할 도체층에 따라 적절히 선택된다. 예를 들면, 상술한 에칭액을 적용할 수 있다.When the resist pattern is removed after performing the plating treatment, the conductor layer covered with the resist is further etched by an etching process to form a conductor pattern, thereby producing the desired printed wiring board. The etching method at this time is appropriately selected depending on the conductor layer to be removed. For example, the etching solution described above can be applied.
레지스트 패턴의 제거 방식으로서는, 예를 들면, 침지 방식 및 스프레이 방식을 들 수 있으며, 이들은 단독으로 사용해도 되고, 병용해도 된다.Examples of resist pattern removal methods include an immersion method and a spray method, and these may be used individually or in combination.
본 실시형태에 관한 감광성 수지 필름을 이용한 배선 패턴을 형성하는 공정의 일 양태를 도 2에 나타낸다.One aspect of the process of forming a wiring pattern using the photosensitive resin film according to this embodiment is shown in FIG. 2.
도 2의 (a)에서는, 상기 감광층 형성 공정에 의하여, 절연층 상에 도체층이 형성된 기판(10) 상에 감광성 수지 필름(1)을 적층하여 감광층(20)을 형성한다. 도 2의 (b)에서는, 상기 노광 공정에 의하여, 감광층(20) 상에 활성광선(30)을 조사하고, 감광층(20)에 광경화부를 형성한다. 도 2의 (c)에서는, 현상 공정에 의하여, 상기 노광 공정에 의하여 형성된 광경화부 이외의 영역을 기판 상으로부터 제거함으로써, 기판(10) 상에 광경화부인 레지스트 패턴(22)을 형성한다. 도 2의 (d)에서는, 레지스트 패턴(22)을 마스크로 하는 도금 처리에 의하여, 레지스트에 의하여 피복되어 있지 않은 기판(10) 상에 도금층(40)을 형성한다. 도 2의 (e)에서는, 광경화부인 레지스트 패턴(22)을 강알칼리의 수용액에 의하여 박리하여 도체 패턴(42)을 형성한다.In Figure 2 (a), the photosensitive layer 20 is formed by laminating the photosensitive resin film 1 on the substrate 10 on which the conductor layer is formed on the insulating layer through the photosensitive layer forming process. In Figure 2 (b), through the exposure process, actinic rays 30 are irradiated onto the photosensitive layer 20, and a photocured portion is formed on the photosensitive layer 20. In FIG. 2(c) , a resist pattern 22, which is a photocurable portion, is formed on the substrate 10 by removing areas other than the photocured portion formed through the exposure process from the substrate through the development process. In Figure 2(d), the plating layer 40 is formed on the substrate 10 not covered with resist by plating using the resist pattern 22 as a mask. In Figure 2(e), the resist pattern 22, which is a photocurable portion, is peeled off with a strong alkali aqueous solution to form a conductor pattern 42.
본 실시형태에 관한 감광성 수지 필름은, 후막이더라도 우수한 패턴 형성성을 갖고, 형성된 레지스트 패턴은 박리 특성이 우수한 점에서, 예를 들면, 인덕터 등의 전자 회로 기판의 제작 등에 적합하게 이용할 수 있다.The photosensitive resin film according to the present embodiment has excellent pattern formation properties even if it is a thick film, and the formed resist pattern has excellent peeling properties, so it can be suitably used, for example, in the production of electronic circuit boards such as inductors.
실시예Example
이하, 실시예 및 비교예에 근거하여 본 실시양태의 목적 및 이점을 보다 구체적으로 설명하지만, 본 실시양태는 이하의 실시예에 한정되는 것은 아니다.Hereinafter, the purpose and advantages of the present embodiment will be described in more detail based on examples and comparative examples, but the present embodiment is not limited to the following examples.
[감광성 수지 필름의 제작][Production of photosensitive resin film]
(실시예 1~4 및 비교예 1)(Examples 1 to 4 and Comparative Example 1)
표 1에 나타내는 각 성분을 동표에 나타내는 배합량(표 중의 수치의 단위는 질량부이며, 용액의 경우는 고형분 환산량이다.)으로 혼합하여, 감광성 수지 조성물의 용액을 조제했다. 표 1에 나타내는 각 성분의 상세는, 이하와 같다.Each component shown in Table 1 was mixed in the mixing amount shown in the same table (the unit of the numerical value in the table is mass part, and in the case of a solution, it is the amount converted to solid content) to prepare a solution of the photosensitive resin composition. The details of each component shown in Table 1 are as follows.
((A) 바인더 폴리머)((A) Binder polymer)
A-1: 메타크릴산/하이드록시에틸메타크릴레이트/스타이렌/메타크릴산 벤질의 공중합체(질량비: 27/3/50/20, Mw: 35000, 산가: 176mgKOH/g, Tg: 107℃)의 에틸렌글라이콜모노메틸에터/톨루엔 용액(고형분: 45질량%)A-1: Copolymer of methacrylic acid/hydroxyethyl methacrylate/styrene/benzyl methacrylate (mass ratio: 27/3/50/20, Mw: 35000, acid value: 176mgKOH/g, Tg: 107°C ) ethylene glycol monomethyl ether/toluene solution (solid content: 45% by mass)
(중량 평균 분자량)(Weight average molecular weight)
바인더 폴리머 용액을 120mg채취하고, 5mL의 THF에 용해하여, Mw 측정용의 시료를 조제했다. Mw는, 젤 퍼미에이션 크로마토그래피법(GPC)에 의하여 측정하고, 표준 폴리스타이렌의 검량선을 이용하여 환산함으로써 도출했다. GPC의 조건을 이하에 나타낸다.120 mg of the binder polymer solution was collected and dissolved in 5 mL of THF to prepare a sample for Mw measurement. Mw was measured by gel permeation chromatography (GPC) and derived by conversion using a standard polystyrene calibration curve. The conditions of GPC are shown below.
(GPC 조건)(GPC conditions)
펌프: 히타치 L-6000형(주식회사 히타치 세이사쿠쇼제)Pump: Hitachi L-6000 type (made by Hitachi Seisakusho Co., Ltd.)
칼럼: Gelpack GL-R420, Gelpack GL-R430 및 Gelpack GL-R440(쇼와 덴코 머티리얼즈 주식회사제, 칼럼 사양: 10.7mmφ×300mm)Column: Gelpack GL-R420, Gelpack GL-R430 and Gelpack GL-R440 (manufactured by Showa Denko Materials Co., Ltd., column specifications: 10.7 mm ϕ × 300 mm)
용리액: 테트라하이드로퓨란(이하, "THF"라고도 한다)Eluent: Tetrahydrofuran (hereinafter also referred to as “THF”)
측정 온도: 40℃Measurement temperature: 40℃
주입량: 200μLInjection volume: 200μL
압력: 49Kgf/cm2(4.8MPa)Pressure: 49Kgf/ cm2 (4.8MPa)
유량: 2.05mL/분Flow rate: 2.05mL/min
검출기: 히타치 L-3300형 RI(주식회사 히타치 세이사쿠쇼제)Detector: Hitachi L-3300 type RI (made by Hitachi Seisakusho Co., Ltd.)
(산가)(acid value)
바인더 폴리머 약 1g에 혼합 용제(질량비: 톨루엔/메탄올=70/30)를 더하여 용해한 용액에, 지시약으로서 페놀프탈레인 용액을 적당량 첨가하고, 0.1N의 수산화 칼륨 수용액으로 적정을 행함으로써, 바인더 폴리머의 산가를 측정했다.The acid value of the binder polymer was determined by adding an appropriate amount of phenolphthalein solution as an indicator to a solution obtained by dissolving a mixed solvent (mass ratio: toluene/methanol = 70/30) in about 1 g of the binder polymer and titrating with a 0.1 N aqueous potassium hydroxide solution. Measured.
((B) 광중합성 화합물)((B) Photopolymerizable compound)
FA-321A: 2,2-비스(4-(아크릴옥시펜타에톡시)페닐)프로페인(쇼와 덴코 머티리얼즈 주식회사, EO기의 수: 10(평균값))FA-321A: 2,2-bis(4-(acryloxypentaethoxy)phenyl)propane (Showa Denko Materials Co., Ltd., number of EO groups: 10 (average value))
A-DCP: 트라이사이클로데케인다이메탄올다이아크릴레이트(신나카무라 가가쿠 고교 주식회사)A-DCP: Tricyclodecanedimethanol diacrylate (Shinnakamura Kagaku High School Co., Ltd.)
FA-321M: 2,2-비스(4-(메타크릴옥시펜타에톡시)페닐)프로페인(쇼와 덴코 머티리얼즈 주식회사, EO기의 수: 10(평균값))FA-321M: 2,2-bis(4-(methacryloxypentaethoxy)phenyl)propane (Showa Denko Materials Co., Ltd., number of EO groups: 10 (average value))
FA-024M: 폴리알킬렌글라이콜다이메타크릴레이트(쇼와 덴코 머티리얼즈 주식회사, EO기의 수: 12(평균값), PO기의 수: 4(평균값))FA-024M: Polyalkylene glycol dimethacrylate (Showa Denko Materials Co., Ltd., number of EO groups: 12 (average value), number of PO groups: 4 (average value))
BPE-200: 에톡시화 비스페놀 A 다이메타크릴레이트(EO 평균 4mol 변성)(신나카무라 가가쿠 고교 주식회사)BPE-200: Ethoxylated bisphenol A dimethacrylate (EO average 4 mol modified) (Shinnakamura Kagaku Kogyo Co., Ltd.)
((C) 광중합 개시제)((C) Photopolymerization initiator)
B-CIM: 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라페닐바이이미다졸(창저우 강력 전자 신재료 주식회사)B-CIM: 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole (Changzhou Strong Electronic New Materials Co., Ltd.)
((D) 중합 금지제)((D) Polymerization inhibitor)
TBC: 4-tert-뷰틸카테콜(DIC 주식회사)TBC: 4-tert-butylcatechol (DIC Corporation)
(증감제)(Sensitizer)
EAB: (주식회사 닛폰 가가쿠 고교쇼)EAB: (Nippon Kagaku Kogyosho Co., Ltd.)
(발색제)(Coloring agent)
LCV: 류코 크리스탈 바이올렛(야마다 가가쿠 고교 주식회사)LCV: Ryuko Crystal Violet (Yamada Kagaku High School Co., Ltd.)
(염료)(dyes)
MKG: 말라카이트 그린(오사카 유키 가가쿠 고교 주식회사)MKG: Malachite Green (Osaka Yuki Kagaku High School Co., Ltd.)
(밀착 부여제)(Adhesion granting agent)
SF-808H: 카복시벤조트라이아졸, 5-아미노-1H-테트라졸, 메톡시프로판올의 혼합물(산와 가세이 주식회사)SF-808H: mixture of carboxybenzotriazole, 5-amino-1H-tetrazole, and methoxypropanol (Sanwa Kasei Co., Ltd.)
감광성 수지 조성물의 용액을, 16μm 두께의 폴리에틸렌테레프탈레이트(PET) 필름(도레이 주식회사제, 상품명: FB-40) 상에 균일하게 도포하고, 열풍 대류식 건조기를 이용하여 70℃에서 10분간 및 100℃에서 10분간 건조하여, 지지 필름으로서의 PET 필름의 편면에, 감광층을 형성했다.A solution of the photosensitive resin composition was uniformly applied onto a 16 μm thick polyethylene terephthalate (PET) film (manufactured by Toray Co., Ltd., brand name: FB-40) and dried at 70°C for 10 minutes and at 100°C using a hot air convection dryer. was dried for 10 minutes to form a photosensitive layer on one side of the PET film as a support film.
[밀착성][Adhesion]
구리박(두께: 12μm)을 유리 섬유 강화 에폭시 수지층의 양면에 적층한 구리 피복 적층판(쇼와 고교 머티리얼즈 주식회사제, 상품명 "MCL-E-67")을 수세, 산세 및 수세 후, 공기류로 건조했다. 이어서, 구리 피복 적층판을 80℃로 가온하고, 감광성 수지 필름을 구리 피복 적층판의 구리 표면에 적층했다. 적층은, 110℃의 히트 롤을 이용하여, 0.4MPa의 압착 압력, 1.0m/분의 롤 속도로 행했다. 이렇게 하여, 구리 피복 적층판과 감광층과 PET 필름이 이 순서로 적층된 적층체를 얻었다.A copper-clad laminate (manufactured by Showa Kogyo Materials Co., Ltd., product name "MCL-E-67") in which copper foil (thickness: 12 μm) is laminated on both sides of a glass fiber-reinforced epoxy resin layer is washed, pickled, and washed with air. dried with Next, the copper-clad laminate was heated to 80°C, and a photosensitive resin film was laminated on the copper surface of the copper-clad laminate. Lamination was performed using a heat roll at 110°C, a compression pressure of 0.4 MPa, and a roll speed of 1.0 m/min. In this way, a laminate was obtained in which the copper-clad laminate, the photosensitive layer, and the PET film were laminated in this order.
적층체의 PET 필름 상에, 네거티브 마스크로서 농도 영역 0.00~2.00, 농도 스텝 0.05, 태블릿의 크기 20mm×187mm, 각 스텝의 크기가 3mm×12mm인 41단 스텝 태블릿을 갖는 포토 툴을 재치했다. 이어서, 고압 수은등을 광원으로 하는 평행광 노광 장치(주식회사 오크 세이사쿠쇼제, 상품명 "EXM-1201")를 이용하여, 소정의 에너지량으로 감광층을 노광했다.On the PET film of the laminate, a photo tool having a 41-step tablet with a density range of 0.00 to 2.00, a density step of 0.05, a tablet size of 20 mm x 187 mm, and each step size of 3 mm x 12 mm was placed as a negative mask. Next, the photosensitive layer was exposed with a predetermined amount of energy using a parallel light exposure apparatus (manufactured by Oak Seisakusho Co., Ltd., brand name "EXM-1201") using a high-pressure mercury lamp as a light source.
적층체의 PET 필름 상에, 평가용 네가티브로서 포토마스크 PKG R&D Test Pattern No. 2(평가용 네가티브: 라인폭/스페이스폭이 x/250(x: 2~30, 단위: μm)의 배선 패턴을 갖는다)를 사용하고, 41단 스텝 태블릿의 현상 후의 잔존 스텝 단수가 14.0이 되는 에너지량으로 노광을 행했다. 노광 후, PET 필름을 박리하고, 30℃의 1질량% 탄산 나트륨 수용액을 최단 현상 시간(미노광 부분이 제거되는 최단 시간)의 2배의 시간으로 스프레이하여, 미노광 부분을 제거했다.On the PET film of the laminate, photomask PKG R&D Test Pattern No. was applied as a negative for evaluation. 2 (negative for evaluation: a line width/space width of x/250 (x: 2 to 30, unit: μm) with a wiring pattern) is used, and the number of remaining steps after development of the 41-step tablet is 14.0. Exposure was performed with different amounts of energy. After exposure, the PET film was peeled, and a 1 mass% sodium carbonate aqueous solution at 30°C was sprayed for twice the shortest development time (shortest time for removing the unexposed portion) to remove the unexposed portion.
현상 처리 후, 스페이스 부분(미노광 부분)이 깨끗이 제거되며, 또한 라인 부분(노광 부분)이 사행(蛇行) 및 결락을 발생시키지 않고 형성된 레지스트 패턴 중, 가장 작은 라인폭/스페이스폭의 값에 의하여, 밀착성을 평가했다. 이 수치가 작을수록, 밀착성이 양호한 것을 의미한다.After development, the space portion (unexposed portion) is removed cleanly, and the line portion (exposed portion) is formed without meandering or omission by the smallest line width/space width value. , adhesion was evaluated. The smaller this value, the better the adhesion.
[박리 특성][Peeling characteristics]
45mm×60mm의 경화막을 형성하는 묘화 패턴을 이용하여, 적층체의 감광층에 대하여, 밀착성의 평가와 동일한 조건으로 노광을 행했다. 노광 후, PET 필름을 박리하고, 밀착성의 평가와 동일한 조건으로 현상 처리를 행함으로써, 기판 상에 45mm×60mm의 경화막이 형성된 시험편을 제작했다. 이어서, 용량 400mL의 비커에, 50℃의 3.0질량% 수산화 나트륨 수용액(박리액)을 300mL 넣고, 길이 30mm의 교반자를 이용하여 200회전/분(rpm)으로 교반했다. 시험편을 박리액에 침지시키고, 경화막이 기판으로부터 완전히 떨어질 때까지의 시간을 측정했다. 박리 시간이 짧을수록 박리 특성이 양호한 것을 의미한다.Using a drawing pattern that forms a cured film of 45 mm x 60 mm, the photosensitive layer of the laminated body was exposed under the same conditions as for evaluation of adhesiveness. After exposure, the PET film was peeled off and development was performed under the same conditions as for the evaluation of adhesion, thereby producing a test piece with a cured film of 45 mm x 60 mm on the substrate. Next, 300 mL of 3.0% by mass sodium hydroxide aqueous solution (stripping solution) at 50°C was added to a beaker with a capacity of 400 mL, and the mixture was stirred at 200 revolutions/minute (rpm) using a stirrer with a length of 30 mm. The test piece was immersed in the stripping liquid, and the time until the cured film completely separated from the substrate was measured. A shorter peeling time means better peeling characteristics.
[표 1][Table 1]
1…감광성 수지 필름
2…지지 필름
10…기판
20…감광층
22…레지스트 패턴
30…활성광선
40…도금층
42…도체 패턴One… photosensitive resin film
2… support film
10… Board
20… photosensitive layer
22… resist pattern
30… active rays
40… plating layer
42… conductor pattern
Claims (8)
두께가 35~300μm인, 감광성 수지 필름.Contains a binder polymer, a photopolymerizable compound containing an acrylate compound, a photopolymerization initiator, and a polymerization inhibitor,
Photosensitive resin film with a thickness of 35 to 300 μm.
상기 아크릴레이트 화합물이, 아크릴로일기를 2개 갖는 다이아크릴레이트를 포함하는, 감광성 수지 필름.In claim 1,
A photosensitive resin film in which the acrylate compound contains diacrylate having two acryloyl groups.
상기 다이아크릴레이트가, 비스페놀 골격 또는 지환식 골격을 갖는, 감광성 수지 필름.In claim 2,
A photosensitive resin film in which the diacrylate has a bisphenol skeleton or an alicyclic skeleton.
상기 광중합성 화합물이, 메타크릴레이트 화합물을 더 포함하는, 감광성 수지 필름.The method according to any one of claims 1 to 3,
A photosensitive resin film in which the photopolymerizable compound further contains a methacrylate compound.
상기 바인더 폴리머가, 스타이렌 또는 스타이렌 유도체에서 유래하는 구조 단위를 갖는, 감광성 수지 필름.The method according to any one of claims 1 to 4,
A photosensitive resin film in which the binder polymer has a structural unit derived from styrene or a styrene derivative.
상기 중합 금지제가, 카테콜 화합물을 포함하는, 감광성 수지 필름.The method according to any one of claims 1 to 5,
A photosensitive resin film in which the polymerization inhibitor contains a catechol compound.
상기 감광층의 적어도 일부에 활성광선을 조사하여, 광경화부를 형성하는 공정과,
상기 감광층의 광경화부 이외의 적어도 일부를 제거하여, 레지스트 패턴을 형성하는 공정을 구비하는, 레지스트 패턴의 형성 방법.A step of providing a photosensitive layer on a substrate using the photosensitive resin film according to any one of claims 1 to 6,
A process of forming a photocured portion by irradiating actinic light to at least a portion of the photosensitive layer;
A method of forming a resist pattern, comprising a step of removing at least a portion other than the photocured portion of the photosensitive layer to form a resist pattern.
상기 도금 처리 후에, 상기 광경화부를 제거하는 공정을 구비하는, 배선 패턴의 형성 방법.A process of forming a conductor pattern by plating a substrate on which a resist pattern is formed by the method of forming a resist pattern according to claim 7;
A method of forming a wiring pattern, comprising a step of removing the photocured portion after the plating treatment.
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JP2000356852A (en) | 1999-04-14 | 2000-12-26 | Asahi Chem Ind Co Ltd | Photosensitive resin laminated body |
WO2008064803A1 (en) | 2006-11-28 | 2008-06-05 | Emcon Technologies Germany (Augsburg) Gmbh | Manifold for an exhaust system |
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JP2007114731A (en) * | 2005-09-20 | 2007-05-10 | Hitachi Chem Co Ltd | Photosensitive element |
JP5181224B2 (en) * | 2008-04-28 | 2013-04-10 | 日立化成株式会社 | Photosensitive resin composition, photosensitive element, resist pattern forming method, and printed wiring board manufacturing method |
JP2016031503A (en) * | 2014-07-30 | 2016-03-07 | 日立化成株式会社 | Method for forming conductive pattern, conductive pattern substrate, and touch panel sensor |
WO2017018053A1 (en) * | 2015-07-29 | 2017-02-02 | 日立化成株式会社 | Photosensitive resin composition, photosensitive element, method for forming resist pattern and method for producing printed wiring board |
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JP2000356852A (en) | 1999-04-14 | 2000-12-26 | Asahi Chem Ind Co Ltd | Photosensitive resin laminated body |
WO2008064803A1 (en) | 2006-11-28 | 2008-06-05 | Emcon Technologies Germany (Augsburg) Gmbh | Manifold for an exhaust system |
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