KR20230149236A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

In a technology for etching multiple substrates at once, the uniformity of the etching process is improved. A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank, a flow rate adjustment unit, and a control unit. The processing tank performs etching treatment by immersing a plurality of substrates in a processing liquid. The flow rate adjustment unit adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank. The control unit controls each unit. Additionally, the control unit has an acquisition unit and an adjustment unit. The acquisition unit acquires information correlating the flow rate of the processing liquid in the treatment tank at multiple locations and the etching amount at multiple locations of the substrate. The adjustment unit adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank based on the information acquired by the acquisition unit.

Description

Substrate processing device and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Conventionally, in a substrate processing system, a technique is known for etching various thin films formed on such a substrate by immersing the substrate in an etching solution (see Patent Document 1).

Japanese Patent Publication No. 2021-180253

The present disclosure provides a technology that can improve the uniformity of etching processing in a technology for collectively etching a plurality of substrates.

A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank, a flow rate adjustment unit, and a control unit. The processing tank performs etching treatment by immersing a plurality of substrates in a processing liquid. The flow rate adjustment unit adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank. The control unit controls each unit. Additionally, the control unit has an acquisition unit and an adjustment unit. The acquisition unit acquires information correlating the flow rate of the processing liquid at a plurality of locations in the treatment tank and an etching amount at a plurality of locations of the substrate. The adjustment unit adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank based on the information acquired by the acquisition unit.

According to the present disclosure, in a technique for etching a plurality of substrates at once, the uniformity of the etching process can be improved.

1 is a schematic block diagram showing the configuration of a substrate processing system according to an embodiment.
Figure 2 is a schematic block diagram showing the configuration of an etching processing device according to an embodiment.
Figure 3 is a view of the bubbling gas supply unit according to the embodiment viewed from above.
Figure 4 is a block diagram showing the configuration of a control device according to an embodiment.
Figure 5 is a diagram showing the etching amount under various discharge conditions in slot 1, slot 25, and slot 50.
Figure 6 is a schematic block diagram showing the configuration of an etchant circulation unit according to a modified example of the embodiment.
Figure 7 is a perspective view showing an etchant circulation unit according to a modified example of the embodiment.
FIG. 8 is a flowchart showing an example of the control process performed by the substrate processing system according to the embodiment.

Hereinafter, with reference to the accompanying drawings, embodiments of the substrate processing apparatus and substrate processing method disclosed by the present application will be described in detail. In addition, the present disclosure is not limited to the embodiments shown below. In addition, it is necessary to note that the drawings are schematic, and the relationship between the dimensions of each element, the ratio of each element, etc. may differ from reality. In addition, even among the drawings, there are cases where parts with different dimensional relationships and ratios are included.

Conventionally, in a substrate processing system, a technique is known to etch various thin films formed on such a substrate by immersing the substrate in an etching solution. The purpose of this prior art is to improve the uniformity of the etching process by alternately increasing or decreasing the flow rate of the processing liquid discharged from a plurality of nozzles.

On the other hand, in the above-described prior art, there was room for further improvement in terms of improving the uniformity of the etching process. Therefore, the realization of a technology that can overcome the above-mentioned problems and improve the uniformity of the etching process is expected.

<Configuration of substrate processing system>

First, the configuration of the substrate processing system 1 according to the embodiment will be described with reference to FIG. 1 . 1 is a schematic block diagram showing the configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing device.

As shown in FIG. 1, the substrate processing system 1 according to the embodiment includes a carrier loading/unloading unit 2, a lot forming unit 3, a lot placement unit 4, and a lot transport unit 5. , a lot processing unit 6, and a control device 7.

The carrier loading/unloading section 2 is provided with a carrier stage 20, a carrier transport mechanism 21, carrier stocks 22, 23, and a carrier placement table 24.

The carrier stage 20 arranges a plurality of foosets (H) transported from the outside. The poof (H) is a container that accommodates a plurality (for example, 25 sheets) of wafers (W) arranged vertically in a horizontal position. The carrier transport mechanism 21 transports the pooh H between the carrier stage 20, the carrier stocks 22 and 23, and the carrier placement table 24.

A plurality of wafers W before processing are transferred from the foof H placed on the carrier placement table 24 to the lot processing unit 6 by the substrate transfer mechanism 30, which will be described later. Additionally, a plurality of processed wafers W are transferred from the lot processing unit 6 to the fob H placed on the carrier placement table 24 by the substrate transport mechanism 30 .

The lot forming unit 3 has a substrate transport mechanism 30 and forms a lot. The lot is composed of a plurality of wafers W (for example, 50 sheets) that are processed simultaneously by combining the wafers W accommodated in one or a plurality of fobs H. A plurality of wafers W forming one lot are arranged at regular intervals with their plates facing each other.

The substrate transport mechanism 30 transports a plurality of wafers W between the lot placement unit 4 and the fob H placed on the carrier placement table 24 .

The lot placement unit 4 has a lot transfer unit 40, and temporarily places (stands by) the lot to be transferred between the lot forming unit 3 and the lot processing unit 6 by the lot transfer unit 5. The lot transfer platform 40 includes a loading-in side placement table 41 for placing unprocessed lots formed in the lot forming unit 3, and an unloading-side placement table 42 for placing lots processed in the lot processing unit 6. has On the loading-in side placement table 41 and the unloading-side placement table 42, a plurality of wafers W for one lot are arranged back and forth in an upright posture.

The lot transfer unit 5 has a lot transfer mechanism 50 and transfers lots between the lot placement unit 4 and the lot processing unit 6 or within the lot processing unit 6. The lot transport mechanism 50 has a rail 51, a moving body 52, and a substrate holding body 53.

The rail 51 is arranged along the X-axis direction across the lot placement unit 4 and the lot processing unit 6. The moving body 52 is configured to be movable along the rail 51 while holding the plurality of wafers W. The substrate holding body 53 is disposed on the moving body 52 and holds a plurality of wafers W arranged back and forth in an upright position.

The lot processing unit 6 performs etching, cleaning, drying, etc. on a plurality of wafers W in one lot at once. In the lot processing unit 6, two etching processing devices 60, a cleaning processing device 70, a cleaning processing device 80, and a drying processing device 90 are arranged along the rail 51. do.

The etching processing device 60 performs etching processing on a plurality of wafers W in one lot at a time. The cleaning processing device 70 performs cleaning processing on a plurality of wafers W in one lot at a time. The cleaning processing device 80 performs a cleaning process on the substrate holding body 53 . The drying processing device 90 performs drying processing on a plurality of wafers W in one lot at once. Additionally, the number of etching processing devices 60, cleaning processing devices 70, cleaning processing devices 80, and drying processing devices 90 is not limited to the example in FIG. 1 .

The etching processing apparatus 60 includes a processing tank 61 for etching processing, a processing tank 62 for rinsing processing, and substrate lifting mechanisms 63 and 64.

The processing tank 61 can accommodate one lot of wafers W arranged in an upright position, and a chemical solution for etching treatment (hereinafter also referred to as “etching solution”) is stored. Details of the treatment tank 61 will be described later.

In the treatment tank 62, a treatment liquid (deionized water, etc.) for rinsing treatment is stored. In the substrate lifting mechanisms 63 and 64, a plurality of wafers W forming a lot are maintained in an upright position, arranged back and forth.

The etching processing device 60 holds the lot conveyed by the lot conveyance unit 5 with the substrate lifting mechanism 63 and immerses it in the etching liquid in the processing tank 61 to perform etching. The etching process is performed for about 1 hour to 3 hours, for example.

The lot that has been etched in the processing tank 61 is transported to the processing tank 62 by the lot transport unit 5 . Then, the etching processing apparatus 60 holds the conveyed lot with the substrate lifting mechanism 64 and performs rinsing treatment by immersing the lot in the rinse liquid of the processing tank 62 . The lot that has been rinsed in the treatment tank 62 is transported by the lot transfer unit 5 to the treatment tank 71 of the cleaning treatment device 70 .

The cleaning processing device 70 includes a processing tank 71 for cleaning, a processing tank 72 for rinsing, and substrate lifting mechanisms 73 and 74. A cleaning chemical solution (hereinafter also referred to as a “cleaning chemical solution”) is stored in the cleaning treatment tank 71 . The cleaning chemical solution is, for example, SC1 (a mixed solution of ammonia, hydrogen peroxide, and water).

A treatment liquid (deionized water, etc.) for rinsing treatment is stored in the treatment tank 72 for rinsing treatment. In the substrate lifting mechanisms 73 and 74, one lot of wafers W are held arranged back and forth in an upright posture.

The cleaning processing device 70 holds the lot transported to the lot transport unit 5 with the substrate lifting mechanism 73 and performs cleaning processing by immersing the lot in the cleaning liquid in the processing tank 71 .

The lot that has been washed in the processing tank 71 is transported to the processing tank 72 by the lot transport unit 5 . Then, the cleaning processing device 70 holds the conveyed lot with the substrate lifting mechanism 74 and performs rinsing treatment by immersing the lot in the rinsing solution of the processing tank 72 . The lot that has been rinsed in the treatment tank 72 is transported by the lot transfer unit 5 to the treatment tank 91 of the drying treatment device 90 .

The drying processing apparatus 90 has a processing tank 91 and a substrate lifting mechanism 92 . Process gas for dry processing is supplied to the treatment tank 91. In the substrate lifting mechanism 92, one lot of wafers W are held arranged back and forth in a standing position.

The drying processing device 90 holds the lot conveyed by the lot transport unit 5 with the substrate lifting mechanism 92 and performs drying processing using the drying processing gas supplied into the processing tank 91. The lot that has been dried in the treatment tank 91 is transported to the lot placement unit 4 by the lot transfer unit 5 .

The cleaning processing device 80 performs a cleaning process on the substrate holding body 53 of the lot transport mechanism 50 by supplying a cleaning processing liquid and supplying a dry gas to the substrate holding body 53 of the lot transport mechanism 50 .

The control device 7 controls each part of the substrate processing system 1 (carrier loading/unloading unit 2, lot forming unit 3, lot placement unit 4, lot transfer unit 5, lot processing unit 6). etc.) controls the operation. The control device 7 controls the operation of each part of the substrate processing system 1 based on signals from switches or various sensors.

The control device 7 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input/output ports, and various circuits. The control device 7 controls the operation of the substrate processing system 1 by, for example, reading and executing a program stored in the storage unit 8 (see FIG. 4). Details of this control device 7 will be described later.

<Configuration of etching processing device>

Next, the configuration of the etching processing apparatus 60 that performs the etching processing of the wafer W will be described with reference to FIGS. 2 and 3 . FIG. 2 is a schematic block diagram showing the configuration of an etching processing device 60 according to an embodiment.

The etching processing device 60 includes an etchant supply unit 100 and a substrate processing unit 110. The etchant supply unit 100 supplies the etchant (L) to the substrate processing unit 110 . Etching liquid L is an example of a treatment liquid.

The etchant supply unit 100 includes an etchant supply source 101, an etchant supply path 102, and a flow rate regulator 103.

The etching liquid supply source 101 is, for example, a tank storing the etching liquid L. The etching liquid L according to the embodiment contains, for example, at least one of phosphoric acid, SC1, TMAH (tetramethyl ammonium hydroxide), a mixed acid containing acetic acid and nitric acid, and a mixed acid containing phosphoric acid and acetic acid.

The etching liquid supply path 102 connects the etching liquid supply source 101 and the outer tank 112 of the treatment tank 61, and supplies the etching liquid L from the etching liquid supply source 101 to the outer tank 112.

The flow rate regulator 103 is disposed in the etchant supply passage 102 and adjusts the flow rate of the etchant L supplied to the outer tank 112. The flow regulator 103 has an on/off valve, a flow control valve, a flow meter, etc.

The substrate processing unit 110 immerses the wafer W in the etching liquid L supplied from the etching liquid supply unit 100 and performs an etching process on the wafer W. The wafer W is an example of a substrate. In the embodiment, for example, among the silicon nitride film and silicon oxide film formed on the wafer W, the silicon nitride film can be selectively etched.

The substrate processing unit 110 includes a processing tank 61, a substrate lifting mechanism 63, an etchant circulation unit 120, and a bubbling gas supply unit 140. The treatment tank 61 has an inner tank 111 and an outer tank 112.

The inner tank 111 is a water tank for immersing the wafer W in the etching liquid L, and accommodates the etching liquid L for immersion. The inner tank 111 has an opening 111a at the top, and the etchant E is stored in the vicinity of the opening 111a.

In the inner bath 111, a plurality of wafers W are immersed in the etching solution L using the substrate lifting mechanism 63, and an etching process is performed on the wafers W. This substrate lifting mechanism 63 is configured to be capable of being lifted up and down, and holds a plurality of wafers W arranged back and forth in a vertical position.

The outer tank 112 is disposed outside the inner tank 111 so as to surround the inner tank 111, and receives the etchant L flowing out from the opening 111a of the inner tank 111. As shown in FIG. 2, the liquid level of the outer tank 112 is maintained lower than the liquid level of the inner tank 111.

The etchant circulation unit 120 circulates the etchant L between the inner tank 111 and the outer tank 112. The etchant circulation unit 120 has a circulation path 121, a pump 122, a heater 123, a filter 124, and a plurality of processing liquid nozzles 125 (three in the drawing).

The circulation path 121 connects the outer tank 112 and the inner tank 111. One end of the circulation path 121 is connected to the bottom of the outer tank 112, and the other end of the circulation path 121 is connected to the treatment liquid nozzle 125 located in the inner tank 111. In the circulation path 121, a pump 122, a heater 123, and a filter 124 are located in that order from the outer tank 112 side.

The pump 122 forms a circulating flow of the etchant L that is sent from the outer tank 112 to the inner tank 111 via the circulation path 121. Additionally, the etchant L overflows from the opening 111a of the inner tank 111 and flows out into the outer tank 112 again. In this way, a circulating flow of the etching liquid L is formed within the substrate processing unit 110. That is, this circulating flow is formed in the outer tank 112, the circulation path 121, and the inner tank 111.

The heater 123 adjusts the temperature of the etchant L circulating in the circulation path 121. The filter 124 filters the etchant L circulating in the circulation path 121. The processing liquid nozzle 125 discharges the etching liquid L circulating in the circulation path 121 upward from the inside of the inner tank 111 to form an upward flow inside the inner tank 111.

The bubbling gas supply unit 140 discharges bubbles of an inert gas (for example, nitrogen gas) into the etching liquid L stored in the inner tank 111. The bubbling gas supply unit 140 has a gas supply source 141, a gas supply path 142, a flow rate regulator 143, and a plurality of gas nozzles 144 (six in the drawing). The plurality of gas nozzles 144 is an example of a flow rate adjustment unit.

The gas supply path 142 connects the gas supply source 141 and the plurality of gas nozzles 144, and supplies an inert gas (for example, nitrogen gas) from the gas supply source 141 to the plurality of gas nozzles 144. do.

The flow rate regulator 143 is disposed in the gas supply passage 142 and adjusts the supply amount of the inert gas supplied to the plurality of gas nozzles 144. The flow regulator 143 has an on/off valve, a flow control valve, and a flow meter.

The plurality of gas nozzles 144 are located, for example, within the inner tank 111 below the wafer W and the processing liquid nozzle 125 . The plurality of gas nozzles 144 discharge bubbles of inert gas upward into the etching liquid L stored in the inner tank 111 to form an upward flow inside the inner tank 111.

The etching processing device 60 according to the embodiment discharges bubbles of inert gas from the plurality of gas nozzles 144, thereby creating a fast flow in the gap between the plurality of wafers W positioned side by side in the inner tank 111. Etching liquid (L) can be supplied. Therefore, according to the embodiment, the plurality of wafers W can be etched efficiently and evenly.

Figure 3 is a view of the bubbling gas supply unit 140 according to the embodiment as seen from above. As shown in FIG. 3, the plurality of gas nozzles 144 provided in the bubbling gas supply unit 140 are, for example, cylindrical members, and are arranged in the direction (Y-axis direction) of the plurality of wafers W. It is extended accordingly.

At the top of the gas nozzle 144, a plurality of discharge ports 145 are provided along the extending direction of the gas nozzle 144. Additionally, the plurality of discharge ports 145 do not necessarily need to be provided above the gas nozzle 144. For example, the plurality of discharge ports 145 may be provided at the lower part of the gas nozzle 144 and discharge gas diagonally downward.

The plurality of gas nozzles 144 are connected to the gas supply source 141 via the gas supply path 142. The gas supply passage 142 has an upstream passage 142a on the upstream side (i.e., on the gas supply source 141 side) and a branch passage 142b on the downstream side (i.e., on the plurality of gas nozzles 144 side). A flow rate regulator 143 is provided in the upstream path 142a.

The branch path 142b branches to be connected to a plurality of gas nozzles 144_1 to 144_6, respectively. Additionally, a plurality of flow rate regulators 147_1 to 147_6 are provided in the branch passages 142b respectively connected to the plurality of gas nozzles 144_1 to 144_6.

These plurality of flow rate regulators 147_1 to 147_6 adjust the supply amount of inert gas supplied to each of the plurality of gas nozzles 144_1 to 144_6. A plurality of flow rate regulators (147_1 to 147_6) each have an on/off valve, a flow control valve, and a flow meter.

In addition, the control unit 9 (see FIG. 4) can individually control the amount of inert gas discharged from the plurality of gas nozzles 144_1 to 144_6 by controlling each of the plurality of flow rate regulators 147_1 to 147_6. . That is, the control unit 9 can adjust the flow rate of the etchant L in the inner tank 111 at a plurality of locations by respectively controlling the plurality of flow rate regulators 147_1 to 147_6.

<Embodiment>

Next, details of the etching process according to the embodiment will be described with reference to FIGS. 4 and 5. Fig. 4 is a block diagram showing the configuration of the control device 7 according to the embodiment. As shown in FIG. 4, the control device 7 includes a storage unit 8 and a control unit 9. Additionally, the control device 7 is connected to the etchant circulation unit 120 and the bubbling gas supply unit 140.

Additionally, the control device 7 may have, in addition to the functional units shown in FIG. 4, various functional units that known computers have, for example, functional units such as various input devices or audio output devices.

The storage unit 8 is realized by, for example, a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk. The storage unit 8 has an etching information storage unit 8a. Additionally, the storage unit 8 stores information used for processing in the control unit 9.

The etching information storage unit 8a stores information (hereinafter also referred to as etching information) that corresponds to the flow rate of the etching liquid at a plurality of locations inside the inner tank 111 and the etching amount at a plurality of locations on the wafer W. do.

In the embodiment, for example, the flow rate of the inert gas discharged from each of the gas nozzles 144_1 to 144_6 and the flow rate of the inert gas discharged from the gas nozzles 144_1 to 144_6 at a plurality of locations (for example, 49 locations) on the wafer W are, for example, stored in the etching information storage unit 8a. Information corresponding to the etching amount is stored as etching information.

Additionally, in the embodiment, individual etching information corresponding to the positions of the 50 wafers W held in the substrate lifting mechanism 63 (hereinafter also referred to as slots 1 to 50) is stored in the etching information storage unit ( It is remembered in 8a).

Fig. 5 is a diagram showing the etching amount under various discharge conditions in slot 1, slot 25, and slot 50. As shown in FIG. 5 , even when the inert gas is discharged under the same discharge conditions, the etching amount distribution within the plane of the wafer W is different in slot 1, slot 25, and slot 50. This is because, inside the inner tank 111, the concentration, temperature, flow rate, etc. of the etchant L around each slot are not necessarily constant.

In addition, in discharge condition A shown in FIG. 5, the flow rate of the inert gas (that is, the flow rate of the etchant L) in the gas nozzle 144 on one side (right side in the figure) is increased compared to the other side. On the other hand, in discharge condition B, the flow rate of the inert gas (that is, the flow rate of the etchant L) in the gas nozzle 144 (left in the drawing) on the other side is increased compared to that on the one side.

In the embodiment, for each slot, the etching amount at a plurality of locations (corresponding to the black dots shown in FIG. 5) of the wafer W under various ejection conditions is stored in the etching information storage unit as individual etching information. It is remembered in (8a).

In addition, one piece of etching information includes the flow rate of the inert gas discharged from each of the gas nozzles 144_1 to 144_6 and the etching amount at a plurality of locations on the wafer W, as well as the etching time (hereinafter also referred to as parts time) at which this etching amount was obtained. nicknames) are also remembered.

Returning to the explanation of Figure 4. The control unit 9 is realized by, for example, a CPU, MPU (Micro Processing Unit), GPU (Graphics Processing Unit), etc., executing a program stored in the storage unit 8 using the RAM as the work area. .

Additionally, the control unit 9 may be realized by an integrated circuit such as an Application Specific Integrated Circuit (ASIC) or a Field Programmable Gate Array (FPGA).

The control unit 9 has an acquisition unit 9a and an adjustment unit 9b, and realizes or executes the functions and actions of control processing described below. Additionally, the internal configuration of the control unit 9 is not limited to the configuration shown in FIG. 4, and may be of any other configuration as long as it performs control processing to be described later.

The acquisition unit 9a acquires a plurality of pieces of etching information stored in the etching information storage unit 8a of the storage unit 8. For example, the acquisition unit 9a acquires all of the plurality of etching information stored for each slot and each ejection condition.

The adjustment unit 9b adjusts the flow rate of the etchant L inside the inner tank 111 at a plurality of locations based on the plurality of etching information acquired by the acquisition unit 9a. For example, the adjustment unit 9b adjusts the flow rate of the inert gas discharged from each of the gas nozzles 144_1 to 144_6 based on the plurality of etching information acquired by the acquisition unit 9a. Details of the processing in this adjustment unit 9b will be described below.

As a result of extensive research by the inventors of the present application, it became clear that, in batch processing in which a plurality of wafers W are immersed at the same time, when a plurality of discharge conditions are overlapped, a very high correlation is obtained between the actual measured value and the calculated value. .

For example, as shown in Figure 5, the actual measured value of the etching amount when discharge condition A and discharge condition B were performed for half a period of time, and the actual measured value of discharge condition A and discharge condition B overlapped by 50 (%). It can be seen that a very high correlation is obtained from the calculated value of the etching amount in one case.

In addition, as shown in FIG. 5, a high correlation between the actual measured value and the calculated value is obtained in any of slot 1, slot 25, and slot 50, so in the embodiment, the actual measured value and the calculated value are obtained in each slot. It can be considered that a high correlation between the families is obtained.

That is, in the embodiment, the desired etching amount can be approximated in all slots by selecting and overlapping a plurality of etching information in which a plurality of discharge conditions are respectively stored.

For example, in the embodiment, the adjustment unit 9b can select and overlap a plurality of etching information under optimal conditions by using a solution to the so-called knapsack problem. Specifically, the adjustment unit 9b determines the weight w of each etching condition so that the following equation (1) is obtained.

[Number 1]

ER _target : desired etching amount

w: weight of one etch information

ER: Etching amount of one etching information

In addition, the constraint conditions when calculating this equation (1) are the following equations (2) and (3).

[Number 2]

[Number 3]

t _MAX : Total etching time

t _parts : Part time of one etching information

In this way, in the embodiment, when certain etching information is superimposed with a certain weight (w) on etching conditions where the etching time is set to t _MAX , the superimposed etching amount (corresponding to w·ER) and the desired etching amount (ER Find whether the difference from _target ) will be minimal.

For example, in the embodiment, the Knapsack problem represented by the above-mentioned equations (1) to (3) can be solved using a solution called a genetic algorithm or MIP (Mixed Integer Programming) solver.

As a result, the adjustment unit 9b can select and overlap a plurality of pieces of etching information to approximate a desired etching amount. Then, the adjustment unit 9b performs etching processing under the ejection conditions stored in each etching information for each processing time corresponding to the weight w calculated for each etching information.

As a result, the etching amount of the plurality of wafers W can be brought close to the desired etching amount. Therefore, according to the embodiment, the uniformity of the etching process can be improved.

The desired etching amount in the present disclosure may be set to be uniform over the entire surface of the wafer W, for example, or may be set to be uniform in a specific portion of the wafer W (e.g., the center or middle portion of the wafer W). , periphery, etc.) may be set to be larger or smaller.

In the embodiment, for example, when the desired etching amount is set to be uniform across the entire surface of the wafer W, the difference between the maximum and minimum etching amounts at a plurality of locations on the wafer W is set to be less than or equal to the Sawyer threshold. , the discharge amount of the plurality of gas nozzles 144 can be adjusted.

As a result, the wafer W can be processed so that the etching amount is uniform across the entire surface of the wafer W.

Additionally, in the embodiment, when the desired etching amount is set to be large or small at a specific portion of the wafer W, the discharge amounts of the plurality of gas nozzles 144 are adjusted so that the difference from the profile of the desired etching amount is minimized. do.

As a result, the wafer W can be processed so that the desired portion of the wafer W approaches the desired etching amount.

Additionally, in the embodiment, the weight w may be optimized so that the etching amount is equally optimized in all slots, or the weight w may be optimized so that the etching amount is most optimized in a specific slot.

By optimizing the weight w so that the etching amount is equally optimized in all slots, the uniformity of the etching process can be improved on all wafers W processed simultaneously.

Additionally, by optimizing the weight w so that the etching amount is most optimized in a specific slot, the uniformity of the etching process for a specific wafer W can be further improved.

Additionally, in the embodiment, the flow rate of the inert gas discharged from the plurality of gas nozzles 144 is independently controlled, so that etching processing can be performed under various discharge conditions. Thereby, the number of etching information stored in the etching information storage unit 8a can be increased.

Therefore, according to the embodiment, the plurality of etching information that is selected and overlaid can be brought closer to the desired etching amount, and thus the uniformity of the etching process can be further improved.

In addition, in the example of FIG. 3, an example in which six gas nozzles 144 are disposed inside the inner tank 111 is shown, but the present disclosure is not limited to this example, and two or more gas nozzles 144 can be disposed. It just needs to be done.

Additionally, in the embodiment, at least one of a nitride film, a silicon film, and a molybdenum film may be formed on the surface of the wafer W. As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

In addition, in the embodiment, the etching liquid L may contain at least one of a mixed acid containing phosphoric acid, SC1, TMAH, acetic acid, and nitric acid, and a mixed acid containing phosphoric acid and acetic acid. As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

In addition, in the embodiment, the temperature of the etching liquid L inside the inner tank 111 may be 10 (°C) to 170 (°C). As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

<Variation example>

Next, a modification of the substrate processing system 1 according to the embodiment will be described with reference to FIGS. 6 and 7. In the above embodiment, an example in which a plurality of gas nozzles 144 are used as the flow rate adjusting unit is shown. However, the present disclosure is not limited to this example, and a plurality of processing liquid nozzles 125 may be used as the flow rate adjusting unit.

FIG. 6 is a schematic block diagram showing the configuration of the etchant circulation unit 120 according to a modification of the embodiment, and FIG. 7 is a perspective view showing the etchant circulation section 120 according to a modification of the embodiment. As shown in FIG. 6 , the etching processing device 60 according to the modification includes an inner tank 111, an outer tank 112, a substrate lifting mechanism 63, and an etchant circulation section 120.

Similar to the above embodiment, the etchant circulation unit 120 includes a circulation path 121, a pump 122, a heater 123, a filter 124, and a plurality of (three in the drawing) processing liquid nozzles. It has (125_1 ~ 125_3). Additionally, hereinafter, when the processing liquid nozzles 125_1 to 125_3 are not distinguished, they may simply be described as the processing liquid nozzle 125.

The processing liquid nozzle 125 is another example of the flow rate adjusting unit, and is disposed inside the inner tank 111 below the plurality of wafers W, and discharges the etching liquid L into the inner tank 111. As shown in FIG. 7 , the processing liquid nozzles 125_1 to 125_3 have body portions 125a_1 to 125a_3.

The main body portions 125a_1 to 125a_3 are, for example, cylindrical members and extend along the arrangement direction (Y-axis direction) of the plurality of wafers W. A plurality of discharge ports 125b are provided at the upper portions of the main body portions 125a_1 to 125a_3 along the extension direction of the main body portions 125a_1 to 125a_3.

The discharge port 125b is, for example, circular, and its opening diameter is, for example, about 0.5 mm to 1.0 mm in diameter. The discharge port 125b discharges the etching liquid L toward vertically upward (Z-axis positive direction), for example.

The main body portions 125a_1 to 125a_3 are respectively connected to branch paths 121b_1 to 121b_3 described later, and discharge the etchant L supplied from the branch paths 121b_1 to 121b_3 from a plurality of discharge ports 125b.

Returning to the explanation of Figure 6. The circulation path 121 connects the outer tank 112 and the processing liquid nozzles 125_1 to 125_3. The circulation path 121 includes an upstream path 121a on the upstream side, branch paths 121b_1 to 121b_3 on the downstream side, and a plurality of bypass paths 127_1 to 127_3. One end of the upstream path 121a is connected to the bottom of the outer tank 112.

A pump 122, a heater 123, and a filter 124 are provided in the upstream path 121a. Since these pumps 122, heaters 123, and filters 124 have the same functions as those in the above-described embodiment, detailed descriptions are omitted.

The plurality of branch paths 121b_1 to 121b_3 branch from the downstream side of the filter 124 in the upstream path 121a. Among these, the branch passage 121b_1 is connected to the processing liquid nozzle 125_1, the branch passage 121b_2 is connected to the processing liquid nozzle 125_2, and the branch passage 121b_3 is connected to the processing liquid nozzle 125_3. .

The plurality of bypass paths 127_1 to 127_3 connect the plurality of branch paths 121b_1 to 121b_3 and the outer tank 112, respectively. The bypass path 127_1 branches off from the branch path 121b_1 and is connected to the outer tank 112, and the bypass path 127_2 branches off from the branch path 121b_2 and is connected to the outer tank 112, and the bypass path ( 127_3) branches off from the branch path 121b_3 and is connected to the outer tank 112.

Additionally, a plurality of flow rate regulators 128_1 to 128_3 are provided in the plurality of bypass paths 127_1 to 127_3. The flow rate regulators 128_1 to 128_3 respectively adjust the flow rate of the etching liquid L supplied to the processing liquid nozzles 125_1 to 125_3.

That is, the flow rate regulators 128_1 to 128_3 respectively adjust the flow rate of the etching liquid L discharged from the plurality of discharge ports 125b_1 to 125b_3 provided in the processing liquid nozzles 125_1 to 125_3.

Specifically, the flow rate regulator 128_1 is provided in the bypass path 127_1 to adjust the flow rate of the etchant L flowing through the bypass path 127_1 from the branch path 121b_1 to the processing liquid nozzle 125_1. Adjust the flow rate of the supplied etching liquid (L).

The flow rate regulator 128_2 is provided in the bypass path 127_2 and adjusts the flow rate of the etchant L flowing through the bypass path 127_2, thereby adjusting the flow rate of the etchant L supplied from the branch path 121b_2 to the processing liquid nozzle 125_2. Adjust the flow rate (L).

The flow rate regulator 128_3 is provided in the bypass path 127_3 and adjusts the flow rate of the etchant L flowing through the bypass path 127_3, thereby adjusting the flow rate of the etchant L supplied from the branch path 121b_3 to the processing liquid nozzle 125_3. Adjust the flow rate (L).

In addition, in the etching information storage unit 8a (see FIG. 4) of the modified example, the flow rate of the etching liquid L discharged from each of the processing liquid nozzles 125_1 to 125_3 and the etching amount at a plurality of locations on the wafer W are correlated. The information is stored as etching information.

Additionally, the acquisition unit 9a (see FIG. 4) acquires a plurality of pieces of etching information stored in the etching information storage unit 8a. The acquisition unit 9a acquires, for example, a plurality of pieces of etching information stored for each ejection condition and for each slot.

Additionally, the adjustment unit 9b (see FIG. 4 ) adjusts the flow rate of the etchant L inside the inner tank 111 at a plurality of locations based on the plurality of etching information acquired by the acquisition unit 9a. In a modified example, the adjustment unit 9b adjusts the flow rate of the etching liquid L discharged from each of the processing liquid nozzles 125_1 to 125_3 based on a plurality of etching information acquired by the acquisition unit 9a.

As a result, as in the above-described embodiment, in the modified example as well, the adjustment unit 9b can select and bring the overlapping plurality of etching information closer to the desired etching amount. Then, the adjustment unit 9b performs etching processing under the ejection conditions stored in each etching information for each processing time corresponding to the weight w calculated for each etching information.

As a result, the etching amount of the plurality of wafers W can be brought close to the desired etching amount. Therefore, according to the modified example, the uniformity of the etching process can be improved.

In addition, in the examples of FIGS. 6 and 7 , an example in which three processing liquid nozzles 125 are disposed inside the inner tank 111 is shown, but the present disclosure is not limited to this example, and the processing liquid nozzles 125 Two or more may be placed.

Additionally, in the above-described embodiments and modified examples, one of the plurality of gas nozzles 144 and the plurality of processing liquid nozzles 125 is individually controlled to control the flow rate at a plurality of locations inside the inner tank 111. Although shown, the present disclosure is not limited to these examples. For example, both the plurality of gas nozzles 144 and the plurality of processing liquid nozzles 125 may be individually controlled to control the flow rate at a plurality of locations inside the inner tank 111.

As a result, the number of etching information stored in the etching information storage unit 8a can be increased, and the uniformity of the etching process can be further improved.

The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a processing tank 61, a flow rate adjustment unit (gas nozzle 144, processing liquid nozzle 125), and a control unit 9. The processing tank 61 performs etching treatment by immersing a plurality of substrates (wafers W) in a processing liquid (etching liquid L). The flow rate adjusting unit (gas nozzle 144, processing liquid nozzle 125) adjusts the flow rate of the processing liquid (etching liquid L) in the processing tank 61 at a plurality of locations. The control unit 9 controls each unit. Additionally, the control unit 9 has an acquisition unit 9a and an adjustment unit 9b. The acquisition unit 9a acquires information (etching information) that corresponds to the flow rate at a plurality of locations of the processing liquid (etchant L) in the processing tank 61 and the etching amount at a plurality of locations on the substrate (wafer W). . The adjustment unit 9b adjusts the flow rate of the processing liquid (etching liquid L) in the processing tank 61 at a plurality of locations based on the information (etching information) acquired by the acquisition unit 9a. Thereby, the uniformity of the etching process can be improved.

Additionally, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the acquisition unit 9a acquires a plurality of pieces of information (etching information) in which different flow rates and etching amounts are associated. In addition, the adjustment unit 9b performs processing within the processing tank 61 by overlapping a plurality of information (etching information) so that the difference between the etching amount at a plurality of locations on the substrate (wafer W) and the desired etching amount is minimized. The flow rate of the liquid (etchant (L)) at multiple locations is adjusted. As a result, the wafer W can be processed so that the desired portion of the wafer W approaches the desired etching amount.

Additionally, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the acquisition unit 9a acquires a plurality of pieces of information (etching information) in which different flow rates and etching amounts are associated. In addition, the adjustment unit 9b superimposes a plurality of pieces of information (etching information) so that the difference between the maximum and minimum etching amounts at a plurality of locations on the substrate (wafer W) is less than or equal to the given threshold value. 61) Adjust the flow rate of the treatment liquid (etching liquid (L)) at a plurality of locations. As a result, the wafer W can be processed so that the etching amount is uniform across the entire surface of the wafer W.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the acquisition unit 9a performs etching at different flow rates for each substrate (wafer W) disposed in the processing tank 61. A plurality of pieces of information (etching information) with corresponding quantities are acquired. Additionally, the adjustment unit 9b overlaps a plurality of pieces of information (etching information) within the processing tank 61 so that the difference between the etching amounts at multiple locations on all substrates (wafers W) and the desired etching amount is minimized. The flow rate of the treatment liquid (etching liquid (L)) at multiple locations is adjusted. As a result, in all wafers W processed simultaneously, the wafers W can be processed so that the desired portion approaches the desired etching amount.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the acquisition unit 9a performs etching at different flow rates for each substrate (wafer W) disposed in the processing tank 61. A plurality of pieces of information (etching liquid (L)) whose quantities are matched are acquired. In addition, the adjustment unit 9b superimposes a plurality of pieces of information (etching information) so that the difference between the maximum and minimum etching amounts at a plurality of locations on all substrates (wafers W) is equal to or less than a given threshold value. (61) The flow rate of the treatment liquid (etching liquid (L)) at a plurality of locations is adjusted. As a result, the wafers W can be processed so that the etching amount is equalized on the entire surface of all wafers W processed simultaneously.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the flow rate adjustment unit includes a plurality of gas nozzles 144 that discharge inert gas into the processing tank 61, and a plurality of gas nozzles 144 that discharge inert gas into the processing tank 61. It includes at least one of a plurality of processing liquid nozzles 125 that discharge the processing liquid. As a result, the flow rate at multiple locations within the treatment tank 61 can be effectively controlled.

Additionally, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, at least one of a nitride film, a silicon film, and a molybdenum film is formed on the surface of the substrate (wafer W). As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

In addition, in the substrate processing device (substrate processing system 1) according to the embodiment, the processing liquid (etching liquid L) is a mixed acid containing phosphoric acid, SC1, TMAH, acetic acid, and nitric acid, and a mixed acid containing phosphoric acid and acetic acid. It is at least one species among mixed acids. As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the temperature of the processing liquid (etching liquid L) in the processing tank 61 is 10 (°C) to 170 (°C). As a result, the films formed on the plurality of wafers W can be etched satisfactorily.

<Sequence of control processing>

Next, the sequence of control processing according to the embodiment will be described with reference to FIG. 8. FIG. 8 is a flowchart showing an example of the control process performed by the substrate processing system 1 according to the embodiment.

In the control processing according to the embodiment, first, the control unit 9 loads a plurality of wafers W into the inner tank 111 of the processing tank 61 (step S101). Then, the control unit 9 performs an etching process on the plurality of wafers W at once in the processing tank 61 (step S102).

Next, the control unit 9 acquires a plurality of etching information stored in the storage unit 8 (step S103). The control unit 9 acquires, for example, a plurality of pieces of etching information that are respectively stored for each ejection condition and for each slot.

Next, the control unit 9 adjusts the flow rate of the etching liquid L inside the inner tank 111 at a plurality of locations based on the plurality of etching information acquired in the process in step S103 (step S104 )). Then, the control unit 9 unloads the plurality of wafers W on which the etching process has been completed from the processing tank 61 (step S105), thereby ending the series of substrate processes.

The substrate processing method according to the embodiment includes an etching process (step S102), an acquisition process (step S103), and an adjustment process (step S104). In the etching process (step S102), a plurality of substrates (wafers W) are immersed in a processing liquid (etching liquid L) in the processing tank 61. The acquisition process (step S103) is information (etching information) in which the flow rate at a plurality of locations of the processing liquid (etchant L) in the treatment tank 61 and the etching amount at a plurality of locations on the substrate (wafer W) are correlated. acquire. The adjustment process (step S104) adjusts the flow rate of the treatment liquid (etchant L) in the treatment tank 61 at a plurality of locations based on the information (etching information) acquired in the acquisition process (step S103). Adjust. Thereby, the uniformity of the etching process can be improved.

Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various changes are possible without departing from the spirit thereof. For example, in the above embodiment, an example of applying the present technology when etching a plurality of wafers W at a time is shown, but the present disclosure is not limited to this example. For example, the present technology may be applied when plating a plurality of wafers W at a time.

The embodiment disclosed this time should be considered in all respects as an example and not restrictive. Indeed, the above-described embodiments may be implemented in various forms. In addition, the above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the attached patent claims.

Claims (10)

a processing tank for performing an etching treatment by immersing a plurality of substrates in a processing liquid;
a flow rate adjustment unit that adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank;
Control unit that controls each part
Equipped with
The control unit,
an acquisition unit that acquires information correlating the flow rate of the processing liquid at a plurality of locations in the treatment tank and an etching amount at a plurality of locations of the substrate;
An adjustment unit that adjusts the flow rate of the treatment liquid at a plurality of locations in the treatment tank based on the information acquired by the acquisition unit.
A substrate processing device having a. According to claim 1,
The acquisition unit acquires a plurality of the information corresponding to different flow rates and etching amounts,
The adjustment unit adjusts the flow rate of the processing liquid at a plurality of locations in the processing tank so that the difference between an etching amount at a plurality of locations on the substrate and a desired etching amount is minimized by superimposing a plurality of the information.
Substrate processing equipment. According to claim 1,
The acquisition unit acquires a plurality of the information corresponding to different flow rates and etching amounts,
The adjustment unit adjusts the flow rate of the processing liquid at a plurality of locations in the processing tank so that the difference between the maximum and minimum values of the etching amount at the plurality of locations on the substrate is less than or equal to a given threshold value by overlapping the plurality of information.
Substrate processing equipment. The method according to any one of claims 1 to 3,
The acquisition unit acquires a plurality of the information corresponding to different flow rates and etching amounts for each of the substrates disposed in the processing tank,
The adjustment unit adjusts the flow rate of the processing liquid at a plurality of locations in the processing tank so that the difference between an etching amount at a plurality of locations on all the substrates and a desired etching amount is minimized by overlapping the plurality of information.
Substrate processing equipment. The method according to any one of claims 1 to 3,
The acquisition unit acquires a plurality of the information corresponding to different flow rates and etching amounts for each of the substrates disposed in the processing tank,
By superimposing the plurality of pieces of information, the adjusting unit adjusts the flow rate of the processing liquid at a plurality of locations in the processing tank so that the difference between the maximum and minimum etching amounts of the plurality of locations on all the substrates is less than or equal to a given threshold value. doing
Substrate processing equipment. The method according to any one of claims 1 to 3,
The flow rate adjusting unit includes at least one of a plurality of gas nozzles that discharge the inert gas into the treatment tank and a plurality of processing liquid nozzles that discharge the processing liquid into the treatment tank.
Substrate processing equipment. The method according to any one of claims 1 to 3,
At least one of a nitride film, a silicon film, and a molybdenum film is formed on the surface of the substrate.
Substrate processing equipment. The method according to any one of claims 1 to 3,
The treatment liquid contains at least one of phosphoric acid, SC1, TMAH, a mixed acid containing acetic acid and nitric acid, and a mixed acid containing phosphoric acid and acetic acid.
Substrate processing equipment. The method according to any one of claims 1 to 3,
The temperature of the treatment liquid in the treatment tank is 10 (℃) to 170 (℃).
Substrate processing equipment. An etching process of immersing a plurality of substrates in a processing liquid in a processing tank;
an acquisition step of acquiring information correlating the flow rate of the processing liquid at a plurality of locations in the treatment tank and an etching amount at a plurality of locations of the substrate;
An adjustment process of adjusting the flow rate of the treatment liquid at a plurality of locations in the treatment tank based on the information acquired in the acquisition process.
A substrate processing method comprising:

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