KR20230144781A - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus according to one aspect of the present invention includes a process module including a process chamber, a first gas supply unit, and a first exhaust unit; A transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit; and a load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; When transferring a substrate to the load lock module, the transfer module, and the process module, gas is continuously supplied through the first gas supply unit, the second gas supply unit, and the third gas supply unit, and the first exhaust unit and the third gas supply unit a control unit that controls valves provided in the second exhaust unit and the third exhaust unit to independently adjust gas emissions inside the process module, the transfer module, and the load lock module; Includes.

Description

Substrate processing apparatus

The present invention relates to semiconductor manufacturing, and more specifically to substrate processing equipment.

Thin films of semiconductor devices are formed on semiconductor substrates by various vapor deposition methods. A substrate processing device for performing this method typically includes a process chamber, a gas line for supplying various gases into the process chamber, a gas injection unit for spraying various gases into the process chamber, and a substrate for seating the substrate. It includes a process module having a support part and an exhaust part that exhausts various gases inside the process chamber. Furthermore, this substrate processing apparatus can form a cluster system in which a plurality of process modules are coupled to a transfer module and the transfer module is coupled to a load lock module.

In these substrate processing devices, substrates are transferred and swapped between load lock modules, transfer modules, and process modules. When swapping substrates, reverse flow of particles and gas may occur in the process module, transfer module, and load lock module, and airflow fluctuations inside the process chamber may occur during the initial stage of opening the exhaust line using the valve provided in the exhaust section. It can happen.

The present invention is intended to solve the above-described problems, and its purpose is to provide a substrate processing device that can control the reverse flow of particles and gases when swapping substrates and alleviate airflow fluctuations inside a process chamber. However, these tasks are illustrative and do not limit the scope of the present invention.

A substrate processing apparatus according to one aspect of the present invention for solving the above problems includes a process module including a process chamber, a first gas supply unit, and a first exhaust unit; A transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit; and a load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; When transferring a substrate to the load lock module, the transfer module, and the process module, gas is continuously supplied through the first gas supply unit, the second gas supply unit, and the third gas supply unit, and the first exhaust unit and the third gas supply unit a control unit that controls valves provided in the second exhaust unit and the third exhaust unit to independently adjust gas emissions inside the process module, the transfer module, and the load lock module; Includes.

In the substrate processing apparatus, the control unit may control continuous supply of purge gas to the process chamber through the first gas supply unit when transferring a substrate to the load lock module, the transfer module, and the process module.

In the substrate processing apparatus, the control unit compares the pressure conditions of the transfer module and the pressure conditions of the process module when transferring substrates in the transfer module and the process module, and when a set pressure condition is achieved, the process chamber The slot valve may be controlled to open and the opening angle of the throttle valve provided in the first exhaust portion of the process module may be controlled to maintain the first opening angle of the throttle valve when the pressure condition is achieved. .

In the substrate processing apparatus, the set pressure condition may be a pressure in which the pressure of the transfer module is higher than the pressure of the process module.

In the substrate processing apparatus, the control unit maintains the opening angle of the throttle valve provided in the first exhaust part of the process module at the first opening angle when transferring substrates in the transfer module and the process module, and then performs a ramping step. It can be controlled to maintain the second opening angle larger than the first opening angle.

In the substrate processing apparatus, when transferring substrates in the transfer module and the process module, the control unit maintains the opening angle of the throttle valve provided in the first exhaust portion of the process module at the second opening angle, The opening angle of the throttle valve provided in the first exhaust part of the process module may be controlled in conjunction with the pressure of the process module and the pressure of the transfer module so that the pressure of the transfer module is higher than the pressure of the process module.

In the substrate processing apparatus, the control unit operates at least one of a roughing valve provided in the second exhaust unit and a roughing valve provided in the third exhaust unit when transferring a substrate to the load lock module, the transfer module, and the process module. The above roughing valves can be controlled.

According to the substrate processing apparatus according to an embodiment of the present invention as described above, particle generation can be suppressed by controlling the reverse flow of particles and gas when swapping substrates and alleviating airflow fluctuations inside the process chamber. Of course, the scope of the present invention is not limited by this effect.

1 is a diagram schematically illustrating the configuration of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating a gas flow in a substrate processing apparatus according to an embodiment of the present invention.
Figure 3 is a diagram illustrating parts of a process module and a transfer module in a substrate processing apparatus according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating the flow of purge gas in a process chamber while a substrate is transferred in a substrate processing apparatus according to an embodiment of the present invention.
FIG. 5 is a graph illustrating pressure fluctuations of a process module and a transfer module while a substrate is transferred in a substrate processing apparatus according to an embodiment of the present invention.
6 is a flowchart illustrating the operational configuration of a substrate processing apparatus according to an embodiment of the present invention.
Figure 7 is a diagram showing the results of confirming the particle reduction pattern in the substrate processing apparatus according to an experimental example of the present invention.

Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the following examples may be modified into various other forms, and the scope of the present invention is as follows. It is not limited to the examples. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the spirit of the present invention to those skilled in the art. Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

FIG. 1 is a diagram schematically illustrating the configuration of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram schematically illustrating a gas flow in a substrate processing apparatus according to an embodiment of the present invention. , FIG. 3 is a diagram illustrating parts of a process module and a transfer module in a substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a diagram illustrating a process while a substrate is transferred in a substrate processing apparatus according to an embodiment of the present invention. This is a diagram illustrating the flow of purge gas in the chamber.

Referring to FIGS. 1 to 4 , the substrate processing apparatus 1000 may include at least one load lock module 300, a transfer module 200, and at least one process module 100.

The process module 100 includes a process chamber 110, a first gas supply unit 174 capable of supplying gas to the process chamber 110, and a first exhaust unit 118 configured to exhaust gas from the process chamber 110 to the outside. ) includes. The transfer module 200 includes a transfer chamber 210, a second gas supply unit 274 capable of supplying gas to the transfer chamber 210, and a second exhaust unit 218 configured to exhaust gas from the transfer chamber 210 to the outside. ) includes. The load lock module 300 includes a load lock chamber 310, a third gas supply unit 374 capable of supplying gas to the load lock chamber 310, and a third gas supply unit configured to exhaust gas from the load lock chamber 310 to the outside. Includes an exhaust section 318.

The load lock chambers 300 may be installed between the outside of an atmospheric pressure environment and the transfer module 200 of a vacuum environment. The load lock chambers 300 are in communication with the outside in an atmospheric pressure environment and allow the substrate (S) to be brought in from the outside, and in a vacuum environment, they are in communication with the transfer module 200 so that the transfer module 200 and the substrate (S) can be swapped. It can be allowed to happen.

An equipment front end module (EFEM, 400) for handling the substrate S under an atmospheric pressure environment may be installed outside the load lock chambers 300. A standby robot 432 that transfers the substrate S may be installed in this equipment front end module 400. The facility front end module 400 is disposed between the load lock chambers 300 and the substrate transfer containers FOUP 500 and can transfer the substrate S on both using the waiting robot 432. In some embodiments, the facility front end module 400 may be omitted from the substrate processing apparatus 1000, and the substrate S may be loaded into the load lock chambers 300 in another manner, such as using an in-factory facility. .

The transfer module 200 may be disposed between the process modules 100 and the load lock module 300. For example, the transfer module 200 may have a polygonal shape, and the process modules 100 and load lock modules 300 may be arranged on each side of the polygonal shape. The number of process chambers 100 and load lock chambers 300 in the substrate processing apparatus 1000 may be appropriately selected and may not be interpreted as limiting the scope of this embodiment. A transfer robot 252 for transferring the substrate S may be installed in the transfer chamber 25. This transfer robot 252 can be used to transfer the substrate S between the process chambers 100 or between the process chambers 100 and the load lock chambers 300. there is.

A plurality of process modules 100 may be connected to the transfer module 200. The process module 100 includes a process chamber 110, a first gas supply unit 174 capable of supplying gas to the process chamber 110, a gas injection unit 120, a substrate support unit 130, and a process chamber 110. It includes a first exhaust unit 118 configured to exhaust gas to the outside.

The process chamber 110 may define a reaction space 112 therein for processing the substrate S. For example, the process chamber 110 is configured to maintain airtightness, and a vacuum pump 116 is installed through the exhaust pipe 114 to discharge the process gas in the reaction space 112 and adjust the degree of vacuum in the reaction space 112. can be connected to The first exhaust unit 118 configured to exhaust gas from the process chamber 110 to the outside may include the exhaust pipe 114 and the vacuum pump 116 described above.

The process chamber 110 may be provided in various shapes, and may include, for example, a side wall defining the reaction space 112 and a cover located on top of the side wall, for example, a top lead.

In some embodiments, process chamber 110 may be connected to transfer module 200. An entrance for swapping the transfer module 200 and the substrate S and a gate 113 for opening and closing the process chamber 110 may be formed. The movement of the gate 113 that opens and closes the entrance can be implemented by turning on/off a slot valve connected to the gate 113.

The transfer module 200 may be used as a buffer chamber when loading the substrate S into the process chamber 110 or unloading the substrate S from the process chamber 110 .

The gas injection unit 120 may be coupled to the process chamber 110 to supply a processing gas (purge gas (SG1) or process gas) supplied from outside the process chamber 110 to the reaction space 112. For example, the gas injection unit 120 may be coupled to the process chamber 110 so as to face the substrate support unit 130 . The gas injection unit 120 may be installed at the upper part of the process chamber 110 to spray processing gas on the substrate S seated on the substrate supporter 130. For example, the gas injection unit 120 includes an inlet through which the processing gas is introduced through the gas pipe 172, a blocker plate for dispersing the processing gas passing through the inlet, and a reaction space for dispersing the processing gas. (112) It may include a distribution plate for spraying into the inside.

In some embodiments, the gas injection unit 120 may have various shapes, such as a shower head shape or a nozzle shape. When the gas injection unit 120 is in the form of a shower head, the gas injection unit 120 may be coupled to the process chamber 110 in a form that partially covers the upper part of the process chamber 110. For example, the gas injection unit 120 may be coupled to the cover or side wall of the process chamber 110.

The substrate support 130 may be coupled to the process chamber 110 to support the substrate S within the reaction space 112. For example, the substrate support unit 130 may be installed in the process chamber 110 to face the gas injection unit 120 .

The shape of the upper plate of the substrate supporter 130 generally corresponds to the shape of the substrate S, but is not limited to this and may be provided in a variety of shapes larger than the substrate S so as to stably seat the substrate S. In one example, the shaft of the substrate supporter 130 may be connected to an external motor (not shown) to enable raising and lowering, and in this case, a bellows pipe (not shown) may be connected to maintain airtightness. Furthermore, since the substrate support portion 130 is configured to place the substrate S thereon, it may also be called a substrate seating portion, a susceptor, etc.

In one embodiment of the present invention, the substrate processing device 1000 is a thin film deposition device for depositing a thin film on the substrate (S), for example, a chemical vapor deposition (CVD) device, a plasma enhanced chemical vapor deposition (CVD) device. It can be used as a plasma enhanced chemical vapor deposition (PECVD) device or an atomic layer deposition (ALD) device.

There are two main methods used in the atomic layer deposition (ALD) process: space division method and time division method. The spatial division atomic layer deposition process has excellent throughput in that the substrate support 130 on which a plurality of substrates is seated rotates while processing gases are continuously sprayed. The time-division atomic layer deposition process has excellent uniformity by spraying processing gases onto the substrate at different times.

When the process module 100 implements a space-division atomic layer deposition process, the first exhaust unit 118, which exhausts the processing gas within the reaction space 112 and adjusts the vacuum level within the reaction space 112, is used to discharge the process gas within the reaction space 112. , may include a first exhaust unit 118 that exhausts the reaction gas and/or purge gas.

When transferring a substrate to the process module 100, the transfer module 200, and the load lock module 300, the substrate processing apparatus 1000 according to an embodiment of the present invention includes the first gas supply unit, the second gas supply unit, and the Gas is continuously supplied through a third gas supply unit, and valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit are controlled to control the gas inside the process module, the transfer module, and the load lock module. A control unit 600 that independently adjusts gas emissions; may include.

The control unit 600 controls gas supply, gas flow rate, and exhaust operation to reduce particle generation when swapping the substrate S between the load lock module 300, the transfer module 200, and the process chamber 110. can do. In some embodiments, the control unit 600 may operate as a central processing unit (CPU) that overall controls the operation of the substrate processing apparatus 1000.

In the substrate processing apparatus 1000, when transferring a substrate to the process module 100, the transfer module 200, and the load lock module 300, the first gas supply unit 174, the second gas supply unit 274, and the third gas supply unit Gas can be continuously supplied through (374). For example, when swapping substrates, gas is continuously supplied through the second gas supply unit 274 to form an over pressure flow atmosphere in the transfer chamber 210, and gas is supplied through the third gas supply unit 374. By continuously supplying gas, an over pressure flow atmosphere can be created in the load lock chamber 310. Furthermore, when swapping substrates, purge gas may be continuously supplied into the process chamber 110 through the first gas supply unit 174. As an example, when the cycle of the atomic layer deposition process is repeated multiple times in the process module 100, the step of continuously supplying the purge gas in the process chamber 110 through the first gas supply unit 174 is one step. It may be performed continuously during the interval after the cycle is completed and before the next subsequent cycle begins.

Furthermore, in the substrate processing apparatus 1000, the valves provided in the first exhaust unit 118, the second exhaust unit 218, and the third exhaust unit 318 are controlled to control the process module, the transfer module, and the load lock. The gas emissions inside the module can be adjusted independently.

The first exhaust unit 118 may include a throttle valve (T/V(1)) and a roughing valve (R/V(1)). Additionally, the second exhaust unit 218 may include a roughing valve (R/V(3)), and the third exhaust unit 318 may include a roughing valve (R/V(4)).

When transferring a substrate to the load lock module 300, transfer module 200, and process module 100, the control unit 600 operates the roughing valve (R/V(3)) provided in the second exhaust unit 218 and the third At least one roughing valve (R/V(4)) provided in the exhaust unit 318 can be controlled. As an example, when transferring a substrate to the load lock module 300, transfer module 200, and process module 100, the roughing valve (R/V(3)) provided in the second exhaust unit 218 and the third exhaust unit All of the roughing valves (R/V(4)) provided at (318) can be controlled to open.

By introducing the above-described configuration, the purge gas in the process module 100 flows continuously when swapping substrates, and the roughing valves of the transfer module 200 and the load lock module 300 are opened to form an independent gas flow. Therefore, it is possible to suppress the backflow of particles and gas from the process module 100 through the transfer module 200 to the load lock module 300.

Hereinafter, it will be explained that sudden pressure changes can be prevented by changing the opening angle of the throttle valve constituting the process module 100 from the position control method to the pressure control method when swapping substrates. do.

In this specification, the pressure of the process module may include the pressure within the process chamber, the pressure of the transfer module may include the pressure within the transfer chamber, and the pressure of the load lock module may include the pressure within the load lock chamber.

FIG. 5 is a graph illustrating pressure fluctuations of a process module and a transfer module while a substrate is transferred in a substrate processing apparatus according to an embodiment of the present invention.

1 to 5, in the substrate processing apparatus 1000 according to an embodiment of the present invention, the control unit 600 controls the transfer module 200 and the transfer module 200 when transferring a substrate in the process module 100. ) and the pressure conditions of the process module 100 are compared to each other, and when the set pressure condition is achieved, the slot valve of the process chamber 110 is controlled to open, and the process module 100 is controlled to open. Controlling to maintain the opening angle of the throttle valve (T/V(1)) provided in the first exhaust unit 118 at the first opening angle of the throttle valve (T/V(1)) when the pressure condition is achieved. You can do it (step 1).

The first opening angle of the throttle valve (T/V(1)) is the opening angle of the throttle valve (T/V(1)) just before opening the slot valve by satisfying the set pressure condition. It can mean.

The set pressure condition may be that the pressure of the transfer module 200 is higher than the pressure of the process module 100. The gas supply flow rate and exhaust operation of the transfer module 200 and the process module 100 may be adjusted to satisfy the above pressure conditions before opening the slot valve.

Continuing, in the substrate processing apparatus 1000 according to an embodiment of the present invention, the control unit 600 operates the first exhaust part of the process module 100 when transferring the substrate in the transfer module 200 and the process module 100. After maintaining the opening angle of the throttle valve (T/V(1)) provided at (118) at the first opening angle (first step), the opening angle is increased to a second opening angle greater than the first opening angle as a ramping step. It can be controlled to maintain (second stage). For example, in the second step, the opening angle of the throttle valve (T/V(1)) provided in the first exhaust unit 118 of the process module 100 is set to be 10% greater than the first opening angle. 2 It can be controlled to maintain the angle.

Continuing, in the substrate processing apparatus 1000 according to an embodiment of the present invention, the control unit 600 operates the first exhaust part of the process module 100 when transferring the substrate in the transfer module 200 and the process module 100. After maintaining the opening angle of the throttle valve (T/V(1)) provided at (118) at the second opening angle (second step), the pressure of the transfer module 200 is equal to the pressure of the process module 100. Instead of fixing the opening angle of the throttle valve (T/V(1)) provided in the first exhaust part 118 of the process module 100 to be higher, the pressure of the process module 100 and the transfer module 200 ) can be controlled (third step) using a pressure control method linked to the pressure.

The above-described first and second steps are a configuration for controlling the opening angle of the throttle valve using a position control method, and the above-described third step is a configuration for adjusting the opening angle of the throttle valve using a pressure control method. . When swapping substrates, a sudden change in pressure can be prevented by changing the opening angle of the throttle valve constituting the process module 100 from a position control method to a pressure control method. The first step may be performed to prevent a sudden change in the opening angle immediately after opening the slot valve, and the third step may be performed to determine the difference between the pressure of the transfer module 200 and the pressure of the process module 100. , and the second step may be performed to prevent a sudden change in chamber pressure in the third step.

6 is a flowchart illustrating the operational configuration of a substrate processing apparatus according to an embodiment of the present invention. The operation configuration is implemented in the substrate processing apparatus described above and can be understood from the description thereof.

Referring to FIGS. 1 to 6 , the operational configuration of the substrate processing apparatus according to an embodiment of the present invention includes completing a process (for example, a deposition process or an etching process) on a substrate in the process chamber 110 and completing substrate swap. This is an operation configuration that is performed in the section before the start of the process on another substrate. When transferring a substrate to the load lock module 300, transfer module 200, and process module 100, purge gas is continuously supplied to the process chamber 110.

First, open the roughing valve (R/V(4)) provided in the load lock module 300 and the roughing valve (R/V(3)) provided in the transfer module 200 (S1).

Gas is continuously supplied through the third gas supply unit 374 to form an over pressure flow atmosphere in the load lock chamber 310 (S2), and gas is continuously supplied through the second gas supply unit 274. Thus, an over pressure flow atmosphere can be created in the transfer chamber 210 (S3).

After the substrate S waits (S4) in front of the slot valve, the pressure in the process chamber 110 is adjusted by adjusting the throttle valve (T/V(1)) provided in the process module 100. .

When transferring a substrate between the transfer module 200 and the process module 100, the pressure conditions of the transfer module 200 and the pressure conditions of the process module 100 are compared to determine whether the set pressure condition is achieved (S6) . The set pressure condition may be a condition in which the pressure of the transfer module 200 is higher than the pressure of the process module 100. If the set pressure condition is not satisfied (N), the pressure in the process chamber 110 is readjusted by adjusting the throttle valve (T/V(1)) provided in the process module 100. If the set pressure condition is satisfied, the chamber slot valve is opened (S7). In this case, the opening angle of the throttle valve (T/V(1)) provided in the process chamber 110 is the opening angle of the throttle valve (T/V(1)) immediately before opening the chamber slot valve (slot valve) ( Maintain the first opening degree angle (step 1; S8).

Subsequently, the opening angle of the throttle valve (T/V(1)) of the process chamber 110 may be maintained at a second opening angle that is larger than the first opening angle as a ramping step (second step; S9). For example, in the second step (S9), the opening angle of the throttle valve (T/V(1)) provided in the first exhaust unit 118 of the process module 100 is increased by 10% compared to the first opening angle. It can be maintained at a larger second angle.

Subsequently, the opening angle of the throttle valve (T/V(1)) provided in the first exhaust portion 118 of the process module 100 so that the pressure of the transfer module 200 is higher than the pressure of the process module 100 Can be controlled (third step; S10) by a pressure control method that links the pressure of the process module 100 and the pressure of the transfer module 200 without fixing it at a constant level. The above-described first step (S8) and second step (S9) are configured to adjust the opening angle of the throttle valve by position control, and the above-described third step (S10) is a pressure ( It is a configuration that is controlled by pressure control method. The pressure control method uses a throttle valve (T/V) provided in the first exhaust unit 118 of the process module 100 to maintain a pressure condition in which the pressure of the process module 100 is higher than the pressure of the transfer module 200. 1)) This is a method of dynamically adjusting the opening angle.

Next, after swapping the substrate, the chamber slot valve is closed (S11) and a subsequent process can be performed.

Figure 7 is a diagram showing the results of confirming the particle reduction pattern in the substrate processing apparatus according to an experimental example of the present invention. The experimental examples in FIG. 7 applied a process of continuously flowing purge gas in the process module 100 when swapping substrates. However, GROUP1 corresponds to the case where the third step is performed immediately after opening the slot valve without performing the first and second steps described above, and GROUP2 is performed immediately after opening the slot valve. This corresponds to the case where the above-described first step, second step, and third step are performed sequentially. L/L (Ar sccm) refers to the flow rate of Ar gas supplied to the load lock module 300 when swapping substrates, and TM (Ar sccm) refers to the flow rate of Ar gas supplied to the transfer module 200 when swapping substrates. means, TM (Bara, Torr) means the chamber pressure within the transfer module 200 when swapping substrates, PM (Bara, Torr) means the chamber pressure within the process module 100 when swapping substrates, and Delta Prs is It refers to the difference between the pressure of the transfer module 200 and the pressure of the process module 100 just before opening the slot valve when swapping substrates. L/L (R/V Open) refers to the difference between the pressure of the transfer module 200 and the pressure of the process module 100 when swapping substrates. It means whether the roughing valve provided in the exhaust part of (300) is open.

Referring to FIG. 7, when swapping substrates, the purge gas in the process module 100 is allowed to flow continuously, and the roughing valve of the load lock module 300 is opened to form an independent gas flow, thereby causing a transfer in the process module 100. It can be confirmed that the reverse flow of particles and gas through the module 200 to the load lock module 300 is suppressed, and the generation of particles is significantly reduced.

Furthermore, by sequentially performing the above-described first, second, and third steps immediately after opening the slot valve, the opening angle of the throttle valve constituting the process module 100 is changed during substrate swapping. It can be seen that by changing the angle from the position control method to the pressure control method, rapid pressure changes are prevented, and particle generation is significantly reduced.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will now be described with reference to drawings that schematically show ideal embodiments of the present invention. In the drawings, variations of the depicted shape may be expected, for example, depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the present invention should not be construed as being limited to the specific shape of the area shown in this specification, but should include, for example, changes in shape resulting from manufacturing.

1000: Substrate processing device
100: Process module
200: transfer module
300: Load lock module
600: Control unit

Claims (7)

A process module including a process chamber, a first gas supply, and a first exhaust;
A transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit;
A load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; and
When transferring a substrate to the load lock module, the transfer module, and the process module, gas is continuously supplied through the first gas supply unit, the second gas supply unit, and the third gas supply unit, and the first exhaust unit and the third gas supply unit a control unit that controls valves provided in the second exhaust unit and the third exhaust unit to independently adjust gas emissions inside the process module, the transfer module, and the load lock module; Including,
Substrate processing equipment. According to claim 1,
The control unit controls to continuously supply purge gas to the process chamber through the first gas supply unit when transferring the substrate to the load lock module, the transfer module, and the process module.
Substrate processing equipment. According to claim 1,
The control unit compares the pressure conditions of the transfer module and the pressure conditions of the process module when transferring substrates in the transfer module and the process module, and when a set pressure condition is achieved, the slot valve of the process chamber ) is controlled to open and the opening angle of the throttle valve provided in the first exhaust portion of the process module is controlled to maintain the first opening angle of the throttle valve when the pressure condition is achieved,
Substrate processing equipment. According to claim 3,
The set pressure condition is characterized in that the pressure of the transfer module is higher than the pressure of the process module,
Substrate processing equipment. According to claim 3,
When transferring a substrate in the transfer module and the process module, the control unit maintains the opening angle of the throttle valve provided in the first exhaust part of the process module at the first opening angle, and then, as a ramping step, opens the opening angle more than the first opening angle. Controlled to maintain a large second degree angle,
Substrate processing equipment. According to claim 4,
When transferring a substrate between the transfer module and the process module, the control unit maintains the opening angle of the throttle valve provided in the first exhaust part of the process module at the second opening angle, and then adjusts the pressure of the transfer module to the second opening angle. Controlling the opening angle of the throttle valve provided in the first exhaust part of the process module to be higher than the pressure of the process module in conjunction with the pressure of the process module and the pressure of the transfer module,
Substrate processing equipment. According to claim 1,
The control unit controls at least one roughing valve among the roughing valve provided in the second exhaust portion and the roughing valve provided in the third exhaust portion when transferring the substrate to the load lock module, the transfer module, and the process module. ,
Substrate processing equipment.