KR20230140231A - substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing while seating and heating a plurality of substrates in a circumferential direction.
The present invention is coupled to the upper side of the chamber body 110, which is open at the upper side and has one or more lower cooling passages 118 and 119 formed on the bottom wall and side wall to form a sealed internal space (S) and has one or more upper cooling passages ( A lead portion 120 formed with 128, 129); A plurality of substrate mounting portions 211 are formed along the circumferential direction, and a substrate support portion 200 installed on the chamber body 110 is rotated with the center of the lid portion 120 as a rotation center; a ceiling part 400 forming a separate process space (P) in the internal space (S); a gas injection unit 500 installed in the central area of the substrate support 200 to spray process gas from the central area to the edge area of the substrate support 200; A main heater unit 610 installed below the substrate support unit 200 to heat the substrate support unit 200 to form a preset temperature condition for the substrate 10 seated on the substrate support unit 200; ; Disclosed is a substrate processing apparatus comprising a temperature control heater unit 700 installed between the lid unit 120 and the ceiling unit 400 to heat the ceiling unit 400.

Description

Substrate processing apparatus {substrate processing apparatus}

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing while seating and heating a plurality of substrates in a circumferential direction.

In general, the SEG (Selective Epitaxial Growth) process, a selective single-crystal silicon thin film growth technology, is a technology that selectively grows silicon in the exposed portion of the silicon substrate without growing silicon on the insulator.

To this end, both source gas for thin film deposition (eg, DCS, MS, DS, GeH4, etc.) and etching gas (eg, HCl, Cl2, etc.) for etching are injected into the process space to perform the process.

However, in the case of a conventional substrate processing device for the SEG process, heating is performed only on the lower side of the substrate support, so the temperature on the upper side of the process chamber is lower than on the substrate support side where the substrate is supported in the space where the process takes place, thereby reducing the temperature of the source within the process space. There is a problem in that the distribution of gas or etching gas becomes uneven, which reduces process efficiency, and causes thin films to be deposited in the internal area of the process chamber where the temperature is relatively low.

When a thin film is deposited in the inner area of the process chamber as the process is performed, periodic cleaning of the process chamber is required. However, since the substrate processing process is stopped when the process chamber is cleaned, there is a problem in that the productivity of the substrate processing device is reduced.

Meanwhile, the present applicant has proposed a substrate processing device such as Patent Document 1 to solve the above problems.

The substrate processing apparatus of Patent Document 1 performs substrate processing by rotating the substrate support while heating the substrate support on the upper and lower sides of the substrate support on which a plurality of substrates are mounted.

Meanwhile, in the substrate processing apparatus of Patent Document 1, the lower heating unit located on the lower side of the substrate supporter can be configured with various patterns and distance conditions for uniform control of the substrate temperature on the substrate supporter, but the upper heating part of the substrate supporter The upper heating unit installed in has many limitations in forming temperature conditions suitable for substrate processing on the upper side of the substrate supporter due to limitations in installation conditions such as optical measurement.

In addition, there is a problem in that the upper side of the substrate support portion does not create a temperature condition suitable for substrate processing of the substrate seated on the substrate support portion due to limitations in the installation conditions of the upper heating portion and a decrease in the temperature of the lid and chamber body.

(Patent Document 1) KR 10-2020-0008348 A

The purpose of the present invention is to solve the above problems by forming a cooling passage in the process chamber and the lid and additionally including a temperature control heater unit that controls the amount of heat generated in conjunction with cooling by the cooling passage, so that the substrate is seated on the support unit. The object is to provide a substrate processing device that can create temperature conditions suitable for substrate processing of a processed substrate.

The present invention was created to achieve the object of the present invention as described above. In the present invention, one or more first gates 111 for introduction and discharge of the substrate 10 are formed, the upper side is open, and the bottom wall and side wall are formed. a chamber body 110 in which at least one of the lower cooling passages 118 and 119 is formed; A lid portion (120) coupled to the upper side of the chamber body (110) to form a sealed internal space (S) and having one or more upper cooling passages (128, 129); A plurality of substrate seating portions 211 on which the substrate 10 is mounted are formed along the circumferential direction, and a substrate support portion 200 installed on the chamber body 110 is rotated with the center of the lid portion 120 as the center of rotation. )and; a side wall portion 300 forming a side wall along an edge of the substrate support portion 200; It is coupled to the central portion of the lid portion 120 so as to face the upper side of the substrate support portion 200, and is seated on the top of the side wall portion 300 to form the substrate support portion 200 and the side wall portion 300. a ceiling part 400 forming a separate process space (P) in the internal space (S); a gas injection unit 500 installed in the central area of the substrate support 200 to spray process gas from the central area to the edge area of the substrate support 200; A main heater unit 610 installed below the substrate support unit 200 to heat the substrate support unit 200 to form a preset temperature condition for the substrate 10 seated on the substrate support unit 200; ; Disclosed is a substrate processing apparatus comprising a temperature control heater unit 700 installed between the lid unit 120 and the ceiling unit 400 to heat the ceiling unit 400.

The temperature control heater unit 700 operates on the lid unit 120 and the chamber body near the edge area in the central area of the substrate support unit 200 with respect to the substrate 10 seated on the substrate support unit 200. The amount of heat generated can be controlled to prevent temperature decrease due to cooling of (110).

The temperature control heater unit 700 is concentric with one or more first temperature control heater units 711 disposed in the central area of the substrate support unit 200 and the first temperature control heater unit 711. It may include one or more second temperature control heater units 712 disposed at the edge area of the substrate support unit 200.

The first temperature control heater unit 711 may be configured as a ring-shaped single loop halogen heater, and the second temperature control heater unit 712 may be configured as a ring-shaped double loop halogen heater.

The first temperature control heater unit 711 is disposed further inside the edge of the substrate 10 mounted on the substrate support unit 200, and the second temperature control heater unit 712 is disposed inside the substrate support unit ( It may be disposed further outside the edge of the substrate 10 mounted on the 200).

The heat generation amounts of the first temperature control heater unit 711 and the second temperature control heater unit 712 can be independently controlled.

The lid portion 120 is provided with one or more viewport portions 810 and 820 for optical measurement of the internal space S, and the viewport portion (810, 820) for controlling the heat generation amount of the temperature control heater portion 700. A second measuring unit 920 that optically measures the temperature of the substrate 10 supported on the substrate support 200 through 810 and 820 may be additionally installed.

The temperature control heater unit 700 is located between the central area and the edge area of the substrate support unit 200 and provides at least one third temperature control unit for heating a portion of the ceiling 400 corresponding to the substrate 10. A heater unit 713 may be additionally included.

The heat generation amount of the third temperature control heater unit 713 can be independently controlled.

The substrate processing apparatus according to the present invention forms a cooling passage in the process chamber and the lid and further includes a temperature control heater unit whose heat generation amount is controlled in conjunction with chamber cooling by the cooling passage, thereby performing substrate processing of the substrate mounted on the substrate supporter. There is an advantage in being able to create suitable temperature conditions.

Specifically, the substrate processing device according to the present invention applies a double chamber structure in which a separate process space is formed inside the external chamber using the substrate support, side wall, and ceiling made of graphite, and a hot wall is formed around the process space. ), and by installing the main heater unit and the temperature control heater unit on the lower side of the substrate support portion and the upper side of the ceiling portion, respectively, temperature conditions suitable for substrate processing can be formed throughout the process space.

In particular, the conventional substrate processing apparatus according to Patent Document 1 had a problem in that a relatively large area of the upper side of the substrate support portion was exposed to the lid portion and the chamber body, resulting in a relative decrease in temperature in the central and edge regions of the substrate support portion.

In contrast, the substrate processing device according to the present invention controls the amount of heat generated by the temperature control heater unit in conjunction with the cooling of the cooling passage installed in the lid unit and the chamber body, thereby forming a high temperature condition suitable for substrate processing throughout the process space. This can create conditions where the gas injected from the center can flow smoothly toward the edges.

Accordingly, during the substrate processing process, the process gas can be evenly distributed from the substrate support side to the ceiling side, and the formation of unnecessary thin films in areas other than the necessary areas of the substrate can be effectively prevented, resulting in a cleaning cycle of the chamber. There is an advantage in that it can be maintained for as long as possible.

1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
FIG. 2 is an enlarged cross-sectional view of a portion of the substrate processing apparatus of FIG. 1.
FIG. 3 is a plan view showing the substrate processing apparatus of FIG. 1.
FIG. 4A is an enlarged cross-sectional view of portion A in FIG. 1.
FIG. 4B is a plan view showing the top surface of the first light guide shown in FIG. 4A.
FIG. 5A is an enlarged cross-sectional view of part B in FIG. 1.
FIG. 5B is a plan view showing the top surface of the second light guide shown in FIG. 5A.
FIG. 6 is a plan view showing an example of an upper heater unit of the substrate processing apparatus of FIG. 1.
FIG. 7 is a graph showing the change in temperature distribution of the substrate support portion through temperature control of the temperature control heater portion as a temperature condition of substrate processing by the substrate processing apparatus of FIG. 1.

Hereinafter, the substrate processing apparatus according to the present invention will be described with reference to the attached drawings.

The substrate processing apparatus according to the present invention forms a sealed internal space (S) and performs substrate processing such as deposition.

In particular, the substrate processing device according to the present invention is useful in the SEG process (Selective Epitaxial Growth) for selective silicon thin film growth in which silicon is selectively grown in exposed portions of the silicon substrate without silicon growing on the insulator. .

For example, the substrate processing apparatus according to the present invention, as shown in FIGS. 1 and 2, includes a chamber body 110 with an upper side open; A lid portion 120 coupled to the upper side of the chamber body 110 to form a sealed internal space (S); A plurality of substrate seating portions 211 on which the substrate 10 is mounted are formed along the circumferential direction, and a substrate support portion 200 installed on the chamber body 110 is rotated with the center of the lid portion 120 as the center of rotation. )and; a ceiling part 400 forming a separate process space (P) in the internal space (S); a gas injection unit 500 installed in the central area of the substrate support 200 to spray process gas from the central area to the edge area of the substrate support 200; A main heater unit 610 is installed below the substrate support 200 and heats the substrate support 200 to form a preset temperature condition for the substrate 10 seated on the substrate support 200. Includes.

The chamber body 110 and the lid portion 120 are configured to form a sealed internal space (S) and can be configured in various ways.

The chamber body 110 may have an opening formed on the upper side, and the lid portion 120 is detachably coupled to the opening of the chamber body 110 to seal the internal space together with the chamber body 110 ( It may be configured to form S).

In addition, the chamber body 110 may have one or more gates 111 formed on its side for introducing and discharging the substrate 10.

The chamber body 110 and the lid portion 120 may be connected to or installed with a power application system for substrate processing, an exhaust system for pressure control and exhaust of the internal space (S), etc.

The chamber body 110 and the lid portion 120 may be made of various materials depending on design, process conditions, etc., and may be made of aluminum or aluminum alloy, for example.

Meanwhile, the chamber body 110 and the lid portion 120 may have one or more cooling passages 118, 119, 128, and 129 formed in order to prevent a temperature increase due to heating of the main heater portion 610, which will be described later. You can. Here, various refrigerants may flow through the cooling passages 118, 119, 128, and 129, and for example, water may flow.

Specifically, the chamber body 110 may have one or more lower cooling passages 118 and 119 formed on at least one of the bottom wall and the side wall.

The lower cooling passages 118 and 119 are formed on at least one of the bottom wall and the side wall to prevent temperature rise due to heating of the main heater unit 610, which will be described later, and are used to prevent heating by the main heater unit 610. Various configurations are possible considering the area.

For example, the lower cooling passages 118 and 119 include a first lower cooling passage 119 formed on the bottom wall of the chamber 110 and a second lower cooling passage 118 formed on the side wall of the chamber 110. can do.

The first lower cooling passage 119 is a cooling passage formed on the bottom wall of the chamber 110, and can be sealed by forming a passage through machining on the bottom of the bottom wall of the chamber 110 and then joining a sealing member by welding, etc. .

And, as shown in FIGS. 1 and 2, the first lower cooling passage 119 may be formed on the front and rear sides with respect to the exhaust port 870.

Meanwhile, considering that the chamber body 110 is circular when viewed from above, the first lower cooling passage 119 may be formed in a circular shape at the edge area of the chamber body 110.

And the horizontal position of the first lower cooling passage 119 may be located inside and outside the edge of the substrate support 200, or across it, as shown in FIGS. 1 and 2.

The second lower cooling passage 118 is a passage formed on the side wall of the chamber 110, and may be formed through various methods such as machining.

The second lower cooling passage 118 may be located lower than the upper surface of the main heater unit 610 on the side wall of the chamber 110.

As shown in FIGS. 1 to 3, the lead portion 120 has one or more upper cooling passages 128 and 129 formed in a circle outside the edge of the substrate support portion 200, which will be described later, when viewed from above. It can be.

The upper cooling passages 128 and 129 are passages formed in the lead portion 120 in a circle around the outside of the edge of the substrate support portion 200, which will be described later, when viewed from the top, and are single with the lead portion 120 as the center. It may be formed as a loop or double loop.

In addition, the upper cooling passages 128 and 129 are preferably located outside the edge of the substrate support 200 in order to minimize temperature increase in the substrate support 200.

Meanwhile, the chamber body 110 and the lid portion 120 are cooled by the upper cooling passages 128 and 129 and the lower cooling passages 118 and 119, so that the temperature of the chamber body 110 of the substrate support portion 200 decreases. There is a problem in that the temperature distribution is relatively low and does not form an optimized temperature distribution for substrate processing, which reduces the uniformity of substrate processing.

Accordingly, it is preferable that the temperature control heater unit 700 that heats the ceiling part 400 is installed between the lid part 120 and the ceiling part 400.

The temperature control heater unit 700 is installed between the lid part 120 and the ceiling part 400 to heat the ceiling part 400, and various configurations are possible.

In particular, the temperature control heater unit 700 is configured to operate the lid unit 120 and the chamber near the edge area in the central area of the substrate support unit 200 with respect to the substrate 10 seated on the substrate support unit 200. In order to prevent a decrease in temperature due to cooling of the main body 110, the amount of heat generated is controlled in conjunction with cooling by the cooling passage.

That is, the temperature control heater unit 700 measures the temperature of the substrate 10, which will be described later, and coolant flowing in the cooling passages 118, 119, 128, and 129 of the lead unit 120 and the chamber body 110. The amount of heat generated can be controlled in conjunction with the cooling temperature.

To this end, the temperature control heater unit 700 includes one or more first temperature control heater units 711 disposed in the central area of the substrate support unit 200, as shown in FIGS. 1, 2, and 6. And, it may include one or more second temperature control heater parts 712 concentric with the first temperature control heater part 711 and disposed at an edge area of the substrate support part 200.

The first temperature control heater unit 711 is a heater disposed in the central area of the substrate support unit 200, and can have various configurations.

For example, the first temperature control heater unit 711 may be composed of a ring-shaped single loop halogen heater connected to the power supply terminal 714.

The second temperature control heater unit 712 is a heater that is concentric with the first temperature control heater unit 711 and is disposed at the edge area of the substrate support unit 200, and can have various configurations.

For example, the second temperature control heater unit 712 may be composed of a ring-shaped double loop halogen heater connected to the power supply terminal 715. For reference, considering that the upper cooling passages 128 and 129 are formed near the edge of the lid portion 120, it is preferable to install a relatively large number of heaters compared to the central area.

Additionally, at least one of the second temperature control heater units 712 may be installed in a baffle, that is, in the upper central part of the side wall unit 300.

Meanwhile, as shown in FIGS. 1, 2, and 6, the temperature control heater unit 700 is located between the central area and the edge area of the substrate support unit 200 to support the substrate 10 in the ceiling 400. ) may additionally include at least one third temperature control heater unit 713 that heats the corresponding portion.

The third temperature control heater unit 713 may be composed of a single loop or multiple loop ring-shaped double loop halogen heater connected to the power supply terminal 716.

The temperature control heater unit 700 having the above configuration includes the first temperature control heater unit 711, the second temperature control heater unit 712, and further the third temperature control heater unit 713. By controlling the heat generation amount, the ceiling 400 can be heated from the central area of the substrate support 200 to the edge, thereby optimizing the temperature distribution within the process space P.

In particular, as shown in Figures 1 and 2, the process gas injected from the gas injection part 500 located in the upper central area of the substrate support part 200 passes through the edge area and forms the side wall part 300. The gas flow flowing into the exhaust hole 310 can be smoothly formed.

Meanwhile, the substrate support unit 200 is sufficiently heated between the central area and the edge area, that is, the wafer (substrate) area, by the main heater unit 610, which will be described later, while the edge area is heated by the lid unit 120 and the edge area. Considering that the temperature decreases due to cooling of the chamber body 110, the first temperature control heater unit 711 is disposed further inside the edge of the substrate 10 seated on the substrate support unit 200. , the second temperature control heater unit 712 may be disposed further outside the edge of the substrate 10 seated on the substrate support unit 200.

Meanwhile, it is preferable that the heat generation amounts of the first temperature control heater unit 711 and the second temperature control heater unit 712 are independently controlled to form a temperature distribution optimized for substrate processing.

Additionally, at least one of the second temperature control heater units 712 may be installed in a baffle, that is, in the upper central part of the side wall unit 300.

Additionally, the heat generation amount of the third temperature control heater unit 713 can be independently controlled.

The temperature control heater unit 700 having the above configuration performs the role of an upper heater through temperature compensation of heat loss in the adjacent area (top/center/outer area of the process chamber) close to the upper side of the substrate support unit 200. can do.

The temperature control heater unit 700 having the above configuration can improve susceptor temperature control efficiency.

That is, the temperature control heater unit 700 serves as an auxiliary function of the upper heater so that the lower heater can easily reach the target temperature with appropriate power.

Additionally, the temperature control heater unit 700 can perform temperature compensation and control functions in the edge area of the substrate.

The temperature control heater unit 700 having the above configuration can greatly reduce the temperature difference between the upper and lower parts (substrate support) of the process area P, thereby creating a stable substrate processing environment.

In addition, the temperature distribution on the substrate support 200 is formed stably, thereby greatly improving the performance of process gases such as DCS and HCL sprayed from the center to be supplied to the substrate. (Thermal diffusion effect)

The first temperature control heater unit 711 and the second temperature control heater unit 712, having the above-mentioned arrangement, determine the heating value of the main heater unit 610, the lid unit 120, and the chamber body 110. By combining cooling and controlling the amount of heat generated, as shown in FIG. 7, a temperature distribution optimized for substrate processing in the substrate support unit 200 can be formed.

Specifically, when the temperature of the substrate 10 on the substrate support 200 is 700°C, the first temperature control heater unit 711 and the second temperature control heater unit 712 operate at a temperature of 560°C to 640°C. By heating to a certain temperature, the temperature distribution on the substrate support 200 can be optimized, as shown in FIG. 7 .

That is, the first temperature control heater unit 711 and the second temperature control heater unit 712 are connected to the substrate 10 on the substrate support unit 200 in consideration of the temperature compensation effect of the edge portion of the substrate 10. The amount of heat generated can be controlled so that the temperature is lower than the temperature.

For example, the first temperature control heater unit 711 and the second temperature control heater unit 712 are configured to control the substrate 10 on the substrate support 200 by considering the temperature compensation effect of the edge portion of the substrate 10. ) The amount of heat generated can be controlled so that the temperature is maintained at about 60°C to 140°C lower than the temperature of the substrate 10 on the substrate support 200.

If the temperature deviation of the first temperature control heater unit 711 and the second temperature control heater unit 712 is too large, the temperature compensation effect at the edge of the substrate 10 is reduced, and the temperature compensation effect of the edge portion of the substrate 10 is reduced. If the deviation is too small, the temperature rise at the edge of the substrate 10 increases, which is not desirable for substrate processing.

The substrate support part 200 is installed in the chamber body 110 and supports one or more substrates 10, and can have various configurations.

For example, the substrate support portion 200 includes a substrate mounting plate 210 on which one or more substrate mounting portions 211 on which the substrate 10 is mounted are formed on the upper surface, and a shaft portion supporting the substrate mounting plate 210. It may include (220).

The substrate seating plate 210 may have a plurality of substrate seating portions 211 formed along the circumferential direction around the central portion C.

At this time, the substrate seating portion 211 may be installed to support the substrate 10 and rotate about the center of the substrate seating portion 211.

The shaft portion 220 may be coupled to a rotation drive unit (not shown) outside the chamber body 110 and rotatably installed with the central portion C, that is, the center of the lid portion 120, as the center of rotation. .

Accordingly, the substrate seated on the substrate mounting portion 211 rotates around the central portion C of the substrate support portion 200 and rotates around the central portion of the substrate seating portion 211, resulting in orbiting and rotating. Substrate processing may be performed.

Meanwhile, in order to form the process space P, which will be described later, a side wall portion 300 forming a side wall may be additionally installed around the edge of the substrate support portion 200.

The side wall portion 300 can have various configurations, forming a side wall along the edge of the substrate support portion 200.

As shown in FIGS. 1 and 2, the side wall portion 300 may include extension portions 302 and 304 extending in a horizontal direction from the top and bottom toward the substrate support portion 200.

The extension portion 302 formed at the top may form a coupling area that is coupled to the ceiling portion 400, which will be described later. For example, a step portion 303 may be formed at the end of the extension portion 302 to support the edge of the ceiling portion 400, which will be described later.

As shown in FIGS. 1 and 2, the extension portion 304 formed at the bottom is preferably installed to form the same plane as the upper surface of the substrate support portion 200, which is positioned during substrate processing.

Meanwhile, in order to discharge the process gas injected from the side wall 300 and the gas injection unit 500, which will be described later, to the outside, a plurality of exhaust holes ( 310) may be included.

That is, the side wall portion 300 may function as a baffle for gas discharge from the process space (P).

The plurality of exhaust holes 310 may be formed along the perimeter of the substrate support 200.

The plurality of exhaust holes 310 may communicate with the exhaust port 870 installed in the chamber body 110.

In addition, the side wall portion 300 may have a second gate 320 formed at a position corresponding to the first gate 111 of the chamber body 110 for introduction and discharge of the substrate 10.

Meanwhile, of course, the side wall portion 300 may be composed of a single member or may be composed by combining or assembling a plurality of members.

The ceiling part 400 is coupled to the central part of the lid part 120 so as to face the upper side of the substrate support part 200, and is seated on the top of the side wall part 300 to support the substrate support part 200 and the side wall. Various configurations are possible by forming a separate process space (P) in the internal space (S) together with the part 300.

The ceiling part 400 is a plate facing the upper side of the substrate support part 200, and is coupled to the central part of the lid part 120 and may be seated on the upper end of the side wall part 300 described above. Specifically, the ceiling portion 400 may be seated on the step portion 303 formed at the upper extension portion 302 of the side wall portion 300 and coupled to the side wall portion 300.

By combining the ceiling portion 400 with the side wall portion 300, a process space (P) that is distinct from the internal space (S) surrounded by the substrate support portion 200, the side wall portion 300, and the ceiling portion 400 can be formed. there is.

The process space (P) corresponds to a space that is separate from the internal space (S), but here, being divided only means that it is physically divided, and is located between the substrate support portion 200 and the side wall portion 300. Since there may be a gap, this does not mean that the internal space (S) formed by the chamber body 110 and the lid portion 120 is completely sealed.

That is, the substrate support 200, the side wall 300, and the ceiling 400 are configured to surround the process space P, and the substrate processing apparatus according to the present invention has a double chamber structure rather than a single chamber structure. It can be composed of:

Additionally, the substrate support portion 200, the side wall portion 300, and the ceiling portion 400 may all be made of graphite material or may be formed by graphite being coated with SiC.

And since the ceiling part 400 covers the upper side of the substrate support part 200, the ceiling part 400 monitors the process state in-situ (substrate temperature, thickness) for optical measurement by the measurement parts 910 and 920, which will be described later. Measuring holes 410 and 420 for (thickness, selectivity loss defect, etc.) may be formed.

The gas injection unit 500 can have various configurations for spraying process gas into the process space (P).

For example, the gas injection unit 500 may be installed in the central area of the substrate support unit 200 to spray process gas from the central area of the substrate support unit 200 toward the edge area.

In one embodiment, the gas injection unit 500 is installed in the process space (P) through the central joining portion of the lid unit 120 and the ceiling unit 400 and extends radially toward the edge of the substrate support unit 200. It may include one or more nozzle units 510 that spray process gas.

At this time, the gas injection unit 500 may spray deposition gas (source gas) and etching gas (etching gas) simultaneously or sequentially for the SEG process.

Specifically, the nozzle unit 510, although not shown, may include a plurality of sub-nozzles that are stacked up and down and have a multi-stage structure in order to spray a plurality of different types of gas.

Each sub-nozzle can spray source gas such as DCS, MS, DS, GeH4, etching gas such as HCL and Cl2, dopant gas such as PH3 and B2H6, and carrier gas such as H2.

The gas injection unit 500 injects gas from the center of the substrate support 200 toward the outer portion, and since a plurality of exhaust holes 310 are formed along the edge of the substrate support 200, the gas injection unit 500 The gas injected from 500 may form a gas flow flowing from the center of the substrate support 200 toward the outer portion, as shown in FIGS. 1 and 2 .

The main heater unit 610 is installed on the lower side of the substrate support unit 200 and is configured to heat the substrate support unit 200. Various heating means, such as the structure of Patent Document 1, can be applied.

By the main heater unit 610, a heated atmosphere can be created in the process space P through the substrate support unit 200 side.

In one embodiment, the main heater unit 610 includes a heating coil 611 that is spirally wound a plurality of times from the central portion of the lower side of the substrate support portion 200 to the outer portion and generates heat by an external power source, and the heating coil ( 611) may include a fixedly installed heating body 612.

The heating coil 611 is a coil that is spirally wound multiple times from the central part of the lower side of the substrate support 200 to the outer part and generates heat by an external power source. Any configuration is possible as long as it is a heating coil.

For example, the heating coil 611 may be composed of a thin plate-shaped coil in the vertical direction.

remind The heating body 612 is a structure in which the heating coil 611 is fixedly installed, and is made of a material with high thermal conductivity while electrically insulated from the heating coil 611, and is heated by the heating coil 611. Thus, heat can be generated in a preset pattern on the lower side of the substrate support part 200.

Meanwhile, it is preferable that an insulating member 613 is installed on the lower side of the heating body 612 to block heat from the heating body 612 from being transferred to the chamber 110.

The insulation member 613 is installed on the lower side of the heating body 612 to block the heat of the heating body 612 from being transferred to the chamber 110, and various configurations are possible.

Meanwhile, the substrate supporter 200 may be provided with a plurality of lift pins 190 that lift the substrate 10 upward for introduction and discharge of the substrate 10.

The lift pins 190 can be raised and lowered by various driving methods, and as shown in Figures 1 and 2, a lifting driving device ( A lifting member 591 that is raised and lowered by 590 may be installed.

Meanwhile, the substrate processing device according to the present invention must measure the deposition thickness and the rotational position of the substrate support for real-time process control.

Accordingly, the substrate processing apparatus according to the present invention, as shown in FIGS. 1 to 5B, is provided on the upper surface of the substrate support unit 200 through one or more viewport units 810 and 820 installed on the upper side of the lid unit 120. and one or more measurement units 910 and 920 that perform optical measurements on any one of the substrates 10 supported on the substrate support unit 200; It may include light guide units 430 and 440 installed on the ceiling 400 to form an optical path of the measurement units 910 and 920, including measurement holes 410 and 420 formed in the ceiling 400. there is.

The viewport units 810 and 820 are installed in one or more of the lead units 120 for optical measurement of the internal space S, and various configurations are possible.

The viewport units 810 and 820 include a lid opening 121 extending from the central area of the lid unit 120 to an edge area and formed in a slot shape; It may include one or more transparent members 811 made of a transparent material that are installed in the lead opening 121 and allow light to pass through to enable light measurement by the measuring units 910 and 920.

The lead opening 121 extends from the central area to the edge area of the lead part 120 and is formed in a slot shape to enable optical measurement of the internal space S. As an opening, various structures are possible depending on the optical path and installation location of the measurement units 910 and 920.

For example, the lid opening 121 may have a slot shape extending from the central area of the lid portion 120 to the edge area, as shown in FIGS. 1 to 3 .

And the number of lead openings 121 may be set according to the positions and numbers of the measurement units 910 and 920.

The transparent member 811 may be made of a material such as quartz or quartz that transmits light to enable optical measurement, and is installed in the lead opening 121 to enable optical measurement by the measurement units 910 and 920. As a configuration, it may have a shape corresponding to the planar shape of the lid opening 121.

Meanwhile, the transparent member 811 may be installed in the lid opening 121 by various structures, and as shown in Figures 1 and 2, is supported on the edge of the lid opening 121 and is attached to the transparent member 811. Various configurations are possible, such as including an upper support part 812 and a lower support part 813 installed to be located in the middle of 811.

The measurement units 910 and 920 measure the upper surface of the substrate support unit 200 and the substrate 10 supported on the substrate support unit 200 through the viewport units 810 and 820 installed on the upper side of the lid unit 120. ), and various configurations are possible depending on the measurement target, measurement principle, etc.

For example, the measurement units 910 and 920 include a first measurement unit 910 that performs optical measurement of the outermost portion of the substrate support unit 200; And it may include at least one of a second measurement unit 920 that performs optical measurement on the substrate 10 mounted on the substrate support unit 200.

The first measurement unit 910 is a component that performs optical measurements on the outermost part of the substrate support unit 200, and is configured to measure the orbital position and orbital speed of the substrate support portion 200 and the substrate seated on the substrate 211. It may be configured to measure the orbital position, rotational position, etc. of the substrate 10.

In case of position measurement, the first measurement unit 910 may include a laser displacement sensor using a laser beam.

The laser displacement sensor includes a photodiode that irradiates light perpendicularly to the substrate support 300/substrate 10, and a photodiode that irradiates light to the substrate support 300/substrate 10 at an angle with the optical path of the photodiode. It may include an imaging means for capturing light.

With the above configuration, the laser displacement sensor can measure the process of the substrate support 300 and the rotation of the substrate 10.

The second measurement unit 920 is a component that performs optical measurement on the substrate 10 mounted on the substrate support 200, and can measure the temperature, reflectance, etc. of the substrate 10.

For example, the second measurement unit 920, like a pyrometer, may be configured to measure at least one of the temperature and reflectance of the substrate 10 mounted on the substrate supporter 200.

The second measuring unit 920 will be used to control the amount of heat generated by the temperature control heater unit 700 described above by measuring the temperature of the substrate 10 seated on the substrate seating unit 211 of the substrate support unit 200. You can.

Meanwhile, at least one of the first measurement unit 910 and the second measurement unit 920 may be installed to be movable in the radial direction from the center of the substrate support 200 in consideration of the size and location of the substrate 10. there is.

To this end, the lead unit 120 may be equipped with a guide rail 830 for movement of the first measurement unit 910 and the second measurement unit 920.

The guide rail 830 is a component for guiding the horizontal movement of at least one of the first measurement unit 910 and the second measurement unit 920, and various configurations are possible.

Meanwhile, it is preferable that one or more light guide units are installed inside the lead unit 120 to enable optical measurement of the internal space (S) by the measurement units 910 and 920 installed on the upper side of the lead unit 120. do.

The light guide units 430 and 440 are installed on the ceiling 400 to form an optical path of the measurement units 910 and 920, including measurement holes 410 and 420 formed in the ceiling 400. As such, various configurations are possible depending on the light guide structure.

Here, the ceiling part 400 may be formed with measurement holes 410 and 420 penetrating upward and downward to connect the optical paths of the measurement units 910 and 920, corresponding to the positions of the measurement units 910 and 920.

In addition, the measurement holes 410 and 420 may be formed with a support structure, such as a stepped structure, for supporting the light guide units 430 and 440, which will be described later.

For example, as shown in FIGS. 4A to 5B, the step portions 411 and 421 for supporting the lower step portions 433 and 443 of the light guide portions 430 and 440 are connected to the measuring hole 410. 420).

Meanwhile, the light guide units 430 and 440 form the optical measurement light path of the first measurement unit 910 and the optical measurement optical path of the second measurement unit 920. It may include a second light guide unit 440 formed.

The first light guide unit 430 is a component that forms the optical measurement optical path of the first measuring unit 910, and can have various configurations depending on the optical path of the first measuring unit 910, as shown in Figures 4A and As shown in Figure 4b, it may be formed in a cylindrical shape.

In addition, the second light guide unit 440 is a component that forms the optical measurement optical path of the second measuring unit 920, and various configurations are possible depending on the optical path of the second measuring unit 920. As shown in Figures 5a and 5b, it may have a cylindrical shape.

In particular, when the second measuring unit 920 has an irradiation light path forming an up and down straight line and a light receiving path that receives light at an angle with the irradiation light path, the second light guide unit 440 has an overall cylindrical shape. An eccentric barrel portion 444 with a diameter reduced enough to maintain the irradiation light path and the light reception path may be formed at the lower portion.

Meanwhile, as the light guide units 430 and 440 are installed, the measurement holes 410 and 420 are formed in the ceiling 400, causing process gas to leak from the process space P and particles to be deposited on the ceiling 400. This can cause defects during substrate processing, such as contamination.

Accordingly, it is preferable that one or more pressing members 450 and 460 that press the light guide units 430 and 440 toward the upper surface of the ceiling 400 are additionally installed.

The pressing members 450 and 460 are installed to press the light guide units 430 and 440 toward the upper surface of the ceiling 400, and are composed of elastic forces such as coil springs, leaf springs, and elastic members such as rubber. Any existing member is possible.

Meanwhile, depending on the installation of the pressing members 450 and 460, it is necessary to provide a support structure to support the pressing members 450 and 460.

The support structure is a structure for supporting the pressing members 450 and 460, and various configurations are possible depending on the supporting structures of the pressing members 450 and 460.

For example, the lid opening 121 corresponds to the light guide portions 430 and 440 and is an upper support portion supporting the upper step portions 435 and 445 formed at the upper portions of the light guide portions 430 and 440. A first support portion 817 formed with (453, 454); The first support portion 817 is fixedly coupled and upper barrel portions 451 and 452 are formed that are continuous with the barrel portions 431 and 441 of the light guide portions 430 and 440 of the light guide portions 430 and 440. Two supports 815 may be installed.

The first support portion 817 corresponds to the light guide portions 430 and 440 and supports the upper step portions 435 and 445 formed at the upper portions of the light guide portions 430 and 440. , 454) is formed, and various configurations are possible.

The upper support portions 453 and 454 are configured to support the upper step portions 435 and 445 formed at the upper portions of the light guide portions 430 and 440. The upper step portions 435 and 445 have a flange structure. It can be configured to support the bottom surface of the upper support portions 453 and 454.

Meanwhile, considering that the light guide parts 430 and 440 are pressed to the ceiling 400 by the pressing members 450 and 460, the light guide parts 430 and 440 have the upper step portion ( It is preferable that 435, 445) are installed spaced apart from the upper ends of the upper supports 453, 454.

And the second support part 815 is fixedly coupled to the first support part 817 and is continuous with the barrel parts 431 and 441 of the light guide parts 430 and 440. Various configurations are possible as a configuration in which the upper barrel portions 451 and 452 are formed.

Meanwhile, the second support portion 815 is configured so that the upper ends of the pressing members 450 and 460, the lower ends of which are supported on the upper surfaces of the edges of the light guide units 430 and 440, are pressed. Installation grooves 455 and 456 may be formed.

And the first support part 817 and the second support part 815 may be coupled by a bolt 816 coupling structure, and at least one of the first support part 817 and the second support part 815 Can be installed and supported on the lead part 120 by being fixedly coupled to the lead part 120.

Since the above is only a description of some of the preferred embodiments that can be implemented by the present invention, as is well known, the scope of the present invention should not be construed as limited to the above embodiments, and the scope of the present invention described above Both the technical idea and the technical idea underlying it will be said to be included in the scope of the present invention.

10: substrate 110: chamber body
120: lead portion 200: substrate support portion
300: side wall 400: ceiling
500: Gas injection unit 610: Main heater unit
700: Temperature control heater unit
118, 119, 128, 129: Cooling passage

Claims (9)

A chamber body 110 in which one or more first gates 111 for introduction and discharge of the substrate 10 are formed, the upper side is open, and one or more lower cooling passages 118 and 119 are formed in at least one of the bottom wall and the side wall; ;
A lid portion (120) coupled to the upper side of the chamber body (110) to form a sealed internal space (S) and having one or more upper cooling passages (128, 129);
A plurality of substrate seating portions 211 on which the substrate 10 is mounted are formed along the circumferential direction, and a substrate support portion 200 installed on the chamber body 110 is rotated with the center of the lid portion 120 as the center of rotation. )and;
a side wall portion 300 forming a side wall along an edge of the substrate support portion 200;
It is coupled to the central portion of the lid portion 120 so as to face the upper side of the substrate support portion 200, and is seated on the top of the side wall portion 300 to form the substrate support portion 200 and the side wall portion 300. a ceiling part 400 forming a separate process space (P) in the internal space (S);
a gas injection unit 500 installed in the central area of the substrate support 200 to spray process gas from the central area to the edge area of the substrate support 200;
A main heater unit 610 installed below the substrate support unit 200 to heat the substrate support unit 200 to form a preset temperature condition for the substrate 10 seated on the substrate support unit 200; ;
A substrate processing apparatus comprising a temperature control heater unit (700) installed between the lid unit (120) and the ceiling unit (400) to heat the ceiling unit (400). In claim 1,
The temperature control heater unit 700,
With respect to the substrate 10 seated on the substrate support 200, the temperature decreases due to cooling of the lid portion 120 and the chamber body 110 in the vicinity of the edge region from the central region of the substrate support portion 200. A substrate processing device characterized in that the amount of heat generated is controlled to prevent. In claim 2,
The temperature control heater unit 700,
One or more first temperature control heater units 711 disposed in the central area of the substrate support unit 200,
A substrate processing apparatus comprising at least one second temperature control heater unit 712 concentric with the first temperature control heater unit 711 and disposed at an edge area of the substrate support unit 200. In claim 3,
The first temperature control heater unit 711 is composed of a ring-shaped single loop halogen heater,
The second temperature control heater unit 712 is a substrate processing device characterized in that it is composed of a ring-shaped double loop halogen heater. In claim 3,
The first temperature control heater unit 711 is disposed further inside the edge of the substrate 10 seated on the substrate support unit 200,
The second temperature control heater unit 712 is a substrate processing apparatus characterized in that it is disposed further outside the edge of the substrate 10 seated on the substrate support unit 200. In claim 5,
A substrate processing apparatus, wherein the heat generation amount of the first temperature control heater unit 711 and the second temperature control heater unit 712 is independently controlled. In claim 6,
The lid unit 120 is provided with one or more viewport units 810 and 820 for optical measurement of the internal space S,
In order to control the heat generation amount of the temperature control heater unit 700, a second measuring unit 920 optically measures the temperature of the substrate 10 supported on the substrate support unit 200 through the viewport units 810 and 820. A substrate processing device characterized in that it is additionally installed. The method of any one of claims 3 to 5,
The temperature control heater unit 700,
Additionally comprising at least one third temperature control heater unit 713 located between the central area and the edge area of the substrate support unit 200 to heat a portion of the ceiling unit 400 corresponding to the substrate 10. A substrate processing device characterized in that. In claim 8,
A substrate processing device characterized in that the heat generation amount of the third temperature control heater unit 713 is independently controlled.

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