KR20230136159A - Display device and wavelength conversion substrate - Google Patents

Abstract

The display device includes a transparent first substrate, a color filter opposing the first substrate in the thickness direction, and a first black matrix layer formed with a plurality of pixel openings facing the first substrate and facing the color filter, and stacked on the lower surface. A light reflective matrix layer, a wavelength conversion layer disposed to overlap at least one of the plurality of pixel openings in plan view and converting the wavelength of light heading toward the color filter, and a first substrate with the first black matrix layer interposed therebetween; It is provided with a plurality of light-emitting elements that emit light toward each of the plurality of pixel openings from opposite sides, and a second substrate on which the plurality of light-emitting elements are disposed and opposed to the first substrate.

Description

Display device and wavelength conversion substrate

The present invention relates to display devices and wavelength conversion substrates.

This application claims priority to Japanese Patent Application No. 2021-012435, filed in Japan on January 28, 2021, and uses its contents here.

A liquid crystal display device is a display device that uses a backlight using an LED (Light Emitting Diode) as a light source and liquid crystal as a display functional layer that switches between light transmission and non-transmission.

In recent years, the technology of using a direct-type backlight called mini LED, which has a structure in which a plurality of LED chips of about 50㎛ to 200㎛ in size are arranged in a matrix, in a liquid crystal display device has been attracting attention. In mini LEDs, a direct-type backlight unit in which a plurality of LED chips (hereinafter sometimes referred to as light-emitting elements) are arranged is usually used.

Additionally, a technology that partially adjusts the light emission luminance of the LED chip or uses local dimming to partially stop the light emission according to the position of the display portion on the display screen is attracting attention.

Micro LED is a display device that has a structure in which LED chips of about 2 μm to 50 μm in size are arranged in a matrix, and displays by individually driving each of the plurality of LED chips. These micro LEDs can display without using liquid crystal.

Micro LED is largely divided into a method that uses three types of LED elements, namely red light emission, green light emission, and blue light emission, and a method that uses only monochromatic light emitting LED devices such as light emitting LED chips that emit light in the wavelength range from blue to near ultraviolet. . In micro LED, each LED element serves as a display functional layer. In a method that uses three types of LED elements - red light-emitting, green light-emitting, and blue light-emitting - LED elements with different light-emitting colors have different heights, making mounting difficult, and also requiring more LED mounting processes than using single-color light-emitting LEDs. . This has the disadvantage of being expensive and the driving voltage being different for each, making its control difficult.

In a method using monochromatic LED elements, each of the plurality of monochromatic LED elements is provided with a wavelength conversion layer (e.g., quantum dots, inorganic phosphor, etc.) that converts the emission wavelength into one of red, green, and blue. By laminating dispersions, color display is realized.

Patent Document 1 discloses a technique for providing a light-scattering partition or a light-reflecting partition as a phosphor substrate in order to effectively utilize the light emitted from a light source such as LED or organic EL.

The partition shape described in Patent Document 1 is a shape in which the cross-sectional area when cut on a plane parallel to one side of the substrate is small on the side far from the substrate and increases in the direction toward the substrate. Patent Document 1 describes that the partition wall may have light scattering or light reflecting properties for the purpose of reflecting fluorescence generated in the phosphor layer.

In order to effectively utilize the light emitted from a light source such as an LED, Patent Document 2 discloses a technique for forming the current injection limiting layer in the light source with a metal reflection layer.

Patent Documents 1 and 2 disclose a technology in which the excitation light is blue light (a blue monochromatic light source) and a technology in which the excitation light is ultraviolet light (for example, a monochromatic light source in the violet, UV region). Additionally, a color conversion layer or phosphor layer that converts these monochromatic lights into red or green light is disclosed.

Japanese Patent Publication No. 2015-64391 Japanese Patent Publication No. 2019-87746

In conventional liquid crystal displays, micro LEDs, and organic EL displays, sufficient linearity of light emitted from the display functional layer toward the pixel opening is not achieved. Therefore, stray light (light in an oblique direction) is generated to adjacent pixels, and display contrast deteriorates. As pixel sizes become smaller, lowering of display contrast due to stray light becomes a problem. Additionally, when a display device is used in a bright environment, a decrease in display contrast due to incident light entering the display device from the outside also becomes a problem.

Additionally, in these liquid crystal display devices, micro LEDs, and organic EL display devices, the pixel aperture ratio becomes smaller as the precision increases, and the brightness (brightness) of the display tends to decrease. In other words, the area ratio of the light-absorbing black matrix increases, making it difficult to effectively use the light emitted from the LED, which is a light source.

FIG. 11 shows a conventional example of a display device including a direct backlight unit 53 using a blue LED as the light emitting element 54. In this conventional example, the liquid crystal panel 58 is exemplified as a display function portion on the upper part of the direct backlight unit 53. The liquid crystal panel 58 has a color filter including a black matrix disposed thereon. To indicate pixel positions, pixels a, b, c, d, e, and f are schematically shown in the liquid crystal panel 58.

The direct backlight unit 53 includes a plurality of light-emitting elements 54, a diffusion plate 55, a wavelength conversion sheet 56, and a prism sheet 57 above the array of light-emitting elements 54. do.

As the plurality of light-emitting elements 54, a plurality of LED chips individually packaged in a metal housing are often used.

The wavelength conversion sheet 56 is a sheet for converting blue light from a portion of the plurality of light-emitting elements 54 that emit blue light into red and green, thereby obtaining three colors of red, green, and blue as a whole.

The prism sheet 57 is formed, for example, by stacking two sheets whose prism extension directions are orthogonal to each other.

The light emitting portion of these LED chips is generally filled with phosphor or light scattering particles together with silicone resin. Since the light emission of the LED has high linearity and is biased toward the center of the LED chip, one role of these phosphors and light scattering particles is to scatter light to expand the field of view.

However, in a configuration where the packaged LED chip is disposed in the direct backlight unit 53, the light emitted from the LED chip is scattered. For this reason, it is undesirable because the emitted light is diffused until it reaches the color filter provided in the pixel opening, thereby lowering the contrast. In other words, it becomes difficult to obtain sufficient effect when applying local dimming.

The diffusion plate 55 and the wavelength conversion sheet 56 both diffuse light. For example, the light emitted from the c-LED (blue LED) located immediately below the c pixel returns to not only the c pixel but also neighboring pixels such as a, b, d, e, and f. As a result, the effect of local dimming is further reduced.

This problem of contrast reduction due to light scattering or stray light to adjacent pixels has not been solved not only in liquid crystal display devices but also in LED displays called micro LEDs, for example.

Unlike organic EL, LED has high luminous efficiency and good heat resistance, so high luminance can be obtained by increasing the amount of current applied to the LED element. A display device using LED as a light source can achieve brightness that is several to ten times greater than a display device using organic EL as a light source. However, a new problem arises in that members adjacent to the LED are deteriorated due to heat generation near the LED element accompanying an increase in the amount of input current.

Patent Document 1 discloses a technique for providing a partition having light reflectivity in order to effectively utilize light emitted from a light source such as LED or organic EL.

However, since the partition disclosed in Patent Document 1 is configured to reflect fluorescence generated in the phosphor layer by the inclined surface of the partition, the extent to which the light emitted from the light source can be effectively utilized is limited. For example, Patent Document 1 does not describe at all that the end surface on the light source side reflects light before entering the fluorescent layer toward the light source.

Patent Document 2 discloses a technique for providing a metal reflection layer in order to effectively utilize light emitted from a light source such as LED.

However, the metal reflection layer in Patent Document 2 is disposed at a position opposite to the color conversion layer on the light source side rather than the color conversion layer surrounded by the black matrix. For this reason, the metal reflection layer improves light efficiency by reflecting light emitted from the color conversion layer upward.

However, regarding the blue light emitted from the active layer, the metal reflection layer is provided for the purpose of shielding the progress of the blue light. For example, Patent Document 2 discloses a structure in which a metal reflection layer includes "a first metal layer, a second metal layer provided on top of the first metal layer, and having a higher reflectance than the first metal layer." The first metal layer is disposed for the purpose of increasing optical loss of blue light from the active layer.

In this way, Patent Documents 1 and 2 do not describe a light reflective matrix layer that has the same shape as the black matrix layer and overlaps in contact with the black matrix layer. There is also no disclosure of a technique for improving brightness using light reflection of a light reflective matrix layer and, for example, light reflection of a metal reflective layer (light reflective electrode) on the light source side.

The present invention has been made in consideration of the above background technology and problems, and provides a display device that can improve the brightness of the display in display devices such as micro LED (LED display), mini LED, and liquid crystal display devices that require greater precision. and a wavelength conversion substrate.

A display device according to a first aspect of the present invention includes a transparent first substrate, a color filter opposing the first substrate in a thickness direction of the first substrate, and the first substrate with the color filter interposed therebetween. A first black matrix layer disposed oppositely and having a plurality of pixel openings opening toward the color filter, and a plurality of pixel openings on a surface of the first black matrix layer opposite to the first substrate. The plurality of pixels in a planar view viewed from the direction toward the first black matrix layer from the first substrate along the normal line of the surface of the first substrate in the thickness direction and the light reflective matrix layer laminated in the excluded range. a wavelength conversion layer disposed between the color filter and the light reflective matrix layer so as to overlap at least one pixel opening of the opening, and converting a wavelength of light passing through the at least one pixel opening and heading toward the color filter; , a plurality of LEDs that radiate light toward each of the plurality of pixel openings from a side opposite to the first substrate with the first black matrix layer interposed therebetween, and the plurality of LEDs are arranged, and the plurality of LEDs are disposed opposite to the first substrate. and a second substrate disposed facing.

In the display device according to the present invention, the light reflective matrix may include a metal thin film formed of aluminum or an aluminum alloy.

In the display device according to the present invention, the light reflective matrix may include a metal thin film formed of silver or a silver alloy.

In the display device according to the present invention, the light reflective matrix layer includes a thin film of titanium or titanium nitride laminated on the first black matrix layer, and a metal thin film formed of aluminum or aluminum alloy laminated on the thin film, You can stay.

In a display device according to the present invention, the light reflective matrix layer includes a first conductive oxide thin film containing indium oxide, a metal thin film formed of silver or a silver alloy laminated on the first conductive oxide thin film, and the metal thin film. It may also include a second conductive oxide thin film containing indium oxide laminated on.

In the display device according to the present invention, each of the plurality of LEDs is a blue light-emitting LED, and the wavelength conversion layer includes red conversion particles that convert blue light into red light, and blue light into green light. It may contain rust conversion particles that convert to .

In the display device according to the present invention, each of the plurality of LEDs is a blue light-emitting LED, and the wavelength conversion layer directs light scattering particles and red conversion particles from the plurality of LEDs toward the color filter to a transparent resin. It may contain a red conversion layer in which dispersed light scattering particles and a green conversion layer in which light scattering particles and green conversion particles are dispersed in a transparent resin are dispersed in this order.

In the display device according to the present invention, each of the plurality of LEDs is a blue light-emitting LED, and the wavelength conversion layer includes a red conversion layer in which light scattering particles and red conversion particles are dispersed in a transparent resin, and light scattering particles. It is divided into a green conversion layer in which green conversion particles are dispersed in a transparent resin, and inside the plurality of pixel openings, a red conversion layer, a green conversion layer, and a light scattering layer in which light scattering particles are dispersed in a transparent resin are provided. It may be arranged.

In the display device according to the present invention, each of the plurality of LEDs is an LED that emits violet to near-ultraviolet light, and the wavelength conversion layer includes red conversion particles that convert violet to near-ultraviolet light into red light, and violet light. It may contain green conversion particles that convert light from violet to near-ultraviolet light into green light, and blue conversion particles that convert light from purple to near-ultraviolet light into blue light.

The display device according to the present invention further includes a second black matrix layer between the first black matrix layer and the first substrate, and the second black matrix layer is located at the plurality of pixel openings in the plan view. It may be provided with a plurality of overlapping openings.

The display device according to the present invention may insert a transmittance adjustment layer that is disposed between the first substrate and the wavelength conversion layer and regulates the transmission of external light.

In the display device according to the present invention, the transmittance adjustment layer may contain carbon.

In the display device according to the present invention, the second substrate is provided with a thin film transistor that respectively drives the plurality of LEDs, and the thin film transistor has a conductive portion of any of silver, silver alloy, copper, and copper alloy, and the conductive portion. Conductive wiring sandwiched with conductive oxide may be provided.

In the display device according to the present invention, a heat dissipation film may be formed on the surface of the second substrate opposite to the surface facing the first substrate.

A wavelength conversion substrate according to a second aspect of the present invention includes a transparent first substrate, a color filter facing the first substrate, and a plurality of pixels disposed opposite the first substrate and opening toward the color filter. A first black matrix layer in which an opening is formed, a light reflective matrix layer laminated on a surface of the first black matrix layer opposite to the first substrate excluding the plurality of pixel openings, and the light reflective matrix disposed between the layer and the color filter to overlap at least one of the plurality of pixel openings in a planar view of the light reflective matrix layer from the first substrate, and the at least one of the plurality of pixel openings. and a wavelength conversion layer that converts the wavelength of light passing through and heading toward the color filter.

According to the display device and wavelength conversion substrate of the present invention, display brightness can be improved in display devices such as micro LED (LED display), mini LED, and liquid crystal display devices that require greater precision.

1 is a partial cross-sectional view of a display device according to a first embodiment of the present invention.
Figure 2 is a partial cross-sectional view of a display device according to a second embodiment of the present invention.
FIG. 3 is an enlarged view of portion F3 in FIG. 2.
FIG. 4 is a modification example 1 of the light reflective matrix layer shown in FIG. 2.
FIG. 5 is a second modification of the light reflective matrix layer shown in FIG. 2.
FIG. 6 is an enlarged view of portion F6 in FIG. 2.
Figure 7 is an example of a circuit diagram for driving a light-emitting device with a thin film transistor, etc.
FIG. 8 is a partial plan view showing the top view shapes of the auxiliary conductor, the light reflective matrix layer, and the first black matrix layer in FIG. 2.
9 is a partial cross-sectional view of a display device according to a third embodiment of the present invention.
10 is a partial cross-sectional view of a display device according to a fourth embodiment of the present invention.
Figure 11 is a schematic cross-sectional view of a conventional display device including a direct backlight unit using a blue LED as a light-emitting element.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention will be described with reference to the drawings. In the following description, identical or substantially identical functions and components are given the same reference numerals, and their descriptions are omitted or simplified, or are explained only when necessary.

Additionally, as necessary, illustrations or partial illustrations of elements that are difficult to illustrate, such as the configuration of a thin film transistor, the structure of multiple layers constituting the conductive layer, wiring connections to the circuit section, and switching elements (transistors), etc. It is omitted.

In each embodiment described below, characteristic parts will be explained, and description will be omitted for parts where there is no difference between the components used in a typical display device and the display device according to the present embodiment, for example.

1st black matrix layer, 2nd black matrix layer, 1st substrate, 2nd substrate, 3rd substrate, etc. Ordinal numbers such as "first" and "second" are used to avoid confusion between components and indicate the quantity. It is not limited. In addition, the matrix arrangement of light-emitting elements refers to an arrangement in which light-emitting units including one or more light-emitting elements (LEDs) are arranged in a matrix at a constant pitch in a planar view. Here, “arranging in a matrix” means arranging at positions corresponding to the intersections of various two-dimensional grids. For example, examples of two-dimensional lattices include square lattices, rectangular lattices, parallelogram lattices, meandering lattices (rhombic lattices), and triangular lattices. “Constant pitch” means that the pitch along one direction of the grid is constant, and the pitches in two different directions may be different from each other. For example, a tetragonal lattice is an example of a lattice having equal pitches in two mutually orthogonal directions, and a rectangular lattice other than a tetragonal lattice is an example of a lattice having different constant pitches in two mutually orthogonal directions. . For example, the triangular lattice is not limited to the equilateral triangle lattice, and also includes scalene triangular lattice.

In the following description, a substrate in which light-emitting elements are arranged in a matrix or light-emitting units are arranged in a matrix at a constant pitch may be referred to as an optical module. It is preferable to also dispose thin film transistors that drive light-emitting elements and light-emitting units on the substrate.

When the display functional layer is a liquid crystal layer, this optical module is called a direct backlight. The light emitting unit may be surrounded by partitions in a grid-like pattern when viewed in plan view as a display device.

Unless otherwise specified, the term “plane view” in the specification refers to a “plane view” viewed from the first substrate toward the second substrate, which will be described later, along the normal line of the surface of the first substrate (the surface of the first substrate, which will be described later). It is ‘poetry’. This direction in plan view also coincides with the direction in which the first black matrix layer described later is viewed from the first substrate.

In an embodiment of the present invention, a plurality of light emitting diode elements called LEDs (Light Emitting Diodes) can be used in the “display functional layer” provided in the display device. LED chips and light-emitting diode devices refer to LEDs, and in the following description, they may simply be referred to as light-emitting devices.

LEDs include, for example, aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAsP), indium gallium nitride (InGaN)/gallium nitride (GaN)/aluminum gallium nitride (AlGaN), gallium phosphide (GaP), zinc selenide ( Compounds such as ZnSe) and aluminum indium gallium phosphorus (AlGaInP) are applied. Gallium nitride (GaN) is mainly used for blue-emitting LEDs and near-ultraviolet-emitting LEDs, which will be described later as monochromatic LEDs.

In the embodiment of the present invention, blue refers to light with a wavelength ranging from 410 nm to 490 nm. A blue LED (blue light-emitting LED) is an LED that has an emission peak within a wavelength range of 410 nm or more and less than 490 nm. In the embodiment of the present invention, near-ultraviolet light is light in the range of a wavelength of 300 nm or more and less than 410 nm (violet to near-ultraviolet light emission). A near-ultraviolet LED is an LED that has an emission peak within a wavelength range of 300 nm or more and less than 410 nm.

In an embodiment of the present invention, a monochromatic light-emitting LED is an LED that has a single light emission peak within the above wavelength range at a half width of 70 nm or less. The smaller the half width is, the more preferable it is.

In mini LED, for example, LED chips with a size of 50㎛ to 200㎛ can be used. In micro LED, for example, LED chips with a size of 2㎛ to 50㎛ can be used. The structure of the LED chip can be a horizontal LED in which the n-side electrode and the p-side electrode are on the same side. However, in the thickness direction of the LED, the n-side electrode and the p-side electrode are on different sides (opposite parallel sides). You can also use type LED. In the following description, the upper electrode and lower electrode refer to either the n-side electrode or the p-side electrode of the vertical LED.

[First Embodiment]

A display device and a wavelength conversion substrate according to the first embodiment will be described.

1 is a partial cross-sectional view of a display device according to a first embodiment of the present invention.

The display device 100 shown in FIG. 1 is an example of a display device according to this embodiment.

The display device 100 includes a first substrate 110 and a second substrate 120. Between the first substrate 110 and the second substrate 120, a color filter 2, a first black matrix layer 1, a light reflective matrix layer 6, a wavelength conversion layer 3, and a plurality of light emitting layers are formed. An element 24 (LED) is disposed.

[First substrate]

The first substrate 110 is a transparent substrate through which display light emitted from the display device 100 transmits toward the observer 59 . The first substrate 110 is a flat plate having a surface 110a (the surface of the first substrate) and a surface 110b in the thickness direction.

The surface 110a is a surface facing the observer 59 and is a plane through which display light is emitted from the first substrate 110.

The surface 110a may form the outermost surface of the display device 100, and may be covered with an appropriate layer or member having light transparency. In the example shown in FIG. 1, a circularly polarizing plate 11 is disposed on the surface 110a.

The surface 110b is a surface opposite to the surface 110a and is a plane through which display light enters the first substrate 110.

The circularly polarizing plate 11 is formed by combining a linear polarizing plate and a quarter wave plate, and converts a certain linearly polarized light component into circularly polarized light. For this reason, when the circularly polarizing plate 11 is disposed on the surface 110a, external emission of a portion of polarized light, such as external light incident on the display device 100 and reflected internally, can be suppressed.

However, if the reflected light of external light can be reduced to a required range by the transmittance adjustment layer 7 described later, the circularly polarizing plate 11 can be omitted.

As a material for the first substrate 110, for example, a transparent substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate containing a polyimide film can be used.

The higher the visible light transmittance of the first substrate 110, the more desirable it is. For example, the transmittance of the first substrate 110 may be 50% or more and 100% or less, and is more preferably 90% or more and 100% or less.

Hereinafter, the two axes orthogonal to each other in the plane parallel to the surface 110a are referred to as the x-axis and y-axis. The positive direction of the x-axis (hereinafter referred to as the x-axis positive direction) is a direction from the left to the right in FIG. 1. The positive direction of the y-axis (hereinafter referred to as the y-axis positive direction) is a direction heading forward from the inside of FIG. 1.

The axis orthogonal to the x-axis and y-axis is called the z-axis. The z-axis is the normal to the surface 110a. The positive direction of the z-axis (hereinafter referred to as the positive z-axis direction) is a direction from the surface 110a to the surface 110b, and corresponds to the direction in plan view indicated by arrow P.

Hereinafter, based on the arrangement of FIG. 1, a position located in the positive direction of the z-axis relative to a specific position is referred to as located below, below, etc., and a position located relatively in the negative direction of the z-axis is referred to as located above, etc. There are cases where it is called.

The direction along the x-axis may be referred to as the x-axis direction, the direction along the y-axis may be referred to as the y-axis direction, and the direction along the z-axis may be referred to as the z-axis direction.

[Second substrate]

The second substrate 120 is a flat plate disposed below the first substrate 110 (in the positive z-axis direction) and away from the first substrate 110 . The second substrate 120 has an upper surface 120a facing the first substrate 110 and a lower surface 120b on the opposite side to the upper surface 120a. The upper surface 120a and the lower surface 120b are parallel to the surface 110a of the first substrate 110.

Above the second substrate 120 (in the negative z-axis direction), a plurality of light emitting elements 24 are arranged in a matrix form in plan view.

The material of the second substrate 120 may be the same as or different from the material of the first substrate 110. In particular, the second substrate 120 does not need to be transparent, so it may be, for example, a substrate colored in black, white, or other colors.

For example, the second substrate 120 may be a sapphire substrate or a silicon substrate on which CMOS elements (transistors, etc.) are disposed. The second substrate 120 may be a silicon substrate on which each light-emitting element 24 is formed by crystal-growing LEDs with a buffer layer interposed therebetween.

As the light emitting element 24, LED is used. The LED used for the light-emitting element 24 is more preferably a monochromatic light-emitting LED. As the monochromatic light-emitting LED, blue LED or near-ultraviolet LED is particularly preferable.

The method of mounting the light emitting element 24 is not particularly limited. For example, methods for mounting the light-emitting element 24 include flip chip mounting using low-melting-point alloy material, mounting using an anisotropic conductive film, or wire bonding using gold wire or the like.

A plurality of thin film transistors that drive the light emitting element 24 may be disposed on the second substrate 120 . When the display device 100 includes a liquid crystal layer, a plurality of thin film transistors may drive the liquid crystal layer.

In the example shown in FIG. 1, the third insulating layer 36, the second insulating layer 35, and the first insulating layer 34 are stacked in this order on the upper surface 120a of the second substrate 120. there is. Thin film transistors that drive each light-emitting element 24 are formed in the third insulating layer 36, the second insulating layer 35, and the first insulating layer 34 through a semiconductor manufacturing process.

In the example shown in FIG. 1, the light emitting element 24 is an LED formed by stacking the second semiconductor layer 27, the light emitting layer 26, and the first semiconductor layer 25 in this order in the z-axis negative direction. .

The light emitting element 24 is stacked on a reflective electrode 29 formed on the upper surface of the first insulating layer 34 with a lower electrode 28 interposed therebetween.

The lower electrode 28 is an electrode that applies each driving voltage to the light emitting layer 26 of each light emitting element 24.

The reflective electrode 29 is electrically connected to the lower electrode 28 and is an electrode formed of a metal with high reflectivity in order to reflect light traveling in the positive z-axis direction from the light emitting layer 26 in the negative z-axis direction.

Each light emitting element 24 is electrically connected to a thin film transistor (not shown) through, for example, a lower electrode 28, a reflective electrode 29, and a contact hole 32.

In the example shown in FIG. 1, a partition 37 is formed around the light emitting element 24 to prevent color mixing with the adjacent light emitting element 24 and to extract light from the side upward. ) is installed. That is, the partition walls 37 are arranged in a rectangular grid shape that pinches the light emitting elements 24 arranged in a matrix in the x-axis direction and the y-axis direction in plan view. The partition 37 is formed so as to be covered with the first black matrix layer 1 described later in plan view.

The partition 37 may be a light-reflective partition in which the surface of a wall made of photoresist is covered with a metal thin film made of a highly reflective metal, such as aluminum or silver. The partition 37 may have light scattering properties.

When using a metal thin film for the partition 37, a metal thin film similar to the light reflective matrix layer 6 described later may be used.

On the upper side of the light emitting element 24 and the partition wall 37, an upper electrode 23 is stacked as a common electrode in the display device 100. The upper electrode 23 has light transparency that transmits light from the light emitting element 24. For example, the upper electrode 23 can be formed of a transparent conductive film such as ITO (indium tin oxide).

The light emitting element 24 emits light based on the voltage applied between the lower electrode 28 and the upper electrode 23.

On the upper electrode 23, an auxiliary conductor 31 is laminated at a position overlapping the partition 37 in plan view. The auxiliary conductor 31 is provided for the purpose of dissipating heat generated by the light emitting element 24 and conducted to the upper electrode 23.

The configuration of the auxiliary conductor 31 is not particularly limited as long as it can efficiently conduct heat from the upper electrode 23.

For example, the auxiliary conductor 31 may be formed in a three-layer structure with metal sandwiched between conductive oxides. The metal used for the auxiliary conductor 31 is more preferably a metal with high thermal conductivity. For example, suitable metals for the auxiliary conductor 31 include silver, silver alloy, aluminum, and aluminum alloy.

The thicker the z-axis direction of the metal used for the auxiliary conductor 31 is, the more efficiently heat from the light emitting element 24 can be dissipated.

The lower surface 120b of the second substrate 120 may form the outermost surface of the display device 100, and may be covered with an appropriate layer film or member.

In the example shown in FIG. 1, a heat dissipation film 10 that promotes heat dissipation of the display device 100 is laminated on the lower surface 120b.

The material of the heat dissipation film 10 is not particularly limited as long as it is a material with good heat dissipation properties. For example, the heat dissipation film 10 may be a thin film made of aluminum or copper formed on the lower surface 120b by vapor deposition or sputtering.

Since the auxiliary conductor 31 and the heat dissipation film 10 are provided to dissipate heat from the light emitting element 24, depending on the amount of heat generated by the light emitting element 24, the auxiliary conductor 31 and the heat dissipation film 10 It can be configured with at least one side omitted.

For example, when the luminance of the light emitting element 24 is 300 cd/m 2 or more, it is more preferable that at least one of the auxiliary conductor 31 and the heat dissipation film 10 is provided.

A transparent resin adhesive layer 9 is laminated on the upper surfaces of the upper electrode 23 and the auxiliary conductor 31.

The transparent resin adhesive layer 9 is a layered portion that adheres the upper electrode 23, the auxiliary conductor 31, and the light reflective matrix layer 6 described later. The transparent resin adhesive layer 9 is formed from a cured product of a transparent resin adhesive.

For example, as a material for forming the transparent resin adhesive layer 9, silicone-based adhesive resin, epoxy-based adhesive resin, urethane-based adhesive resin, etc. may be used.

On the upper surface of the transparent resin adhesive layer 9, a light reflective matrix layer 6 and a first black matrix layer 1 are laminated in this order.

[First black matrix layer]

The first black matrix layer 1 is made of a light-absorbing material to prevent color mixing of display light, and has a plurality of pixel openings Or, Og, and Ob penetrating in the layer thickness direction.

The planar shapes of the plurality of pixel openings Or, Og, and Ob are all rectangular, and the planar center of each pixel opening Or, Og, and Ob overlaps with the planar light emission center of each light-emitting element 24.

The pixel opening Or faces the light emitting element 24 that emits light corresponding to red display light.

The pixel opening Og faces the light emitting element 24 that emits light corresponding to green display light.

The pixel opening Ob faces the light emitting element 24 that emits light corresponding to blue display light.

Additionally, the pixel openings Or, Og, and Ob are open toward a red filter (R), a green filter (G), and a blue filter (B), respectively, which will be described later.

In Fig. 1, pixel openings Or, Og, and Ob are repeatedly arranged in this order in the positive x-axis direction. In the y-axis direction, other pixel openings Or, Og, and Ob are arranged corresponding to the pixel openings Or, Og, and Ob shown in FIG. 1, respectively. For this reason, the plurality of pixel openings Or, Og, and Ob are arranged in a stripe shape with space between each other in the y-axis direction.

However, the arrangement of the pixel openings Or, Og, and Ob is not limited to this, and an appropriate arrangement can be selected from the known arrangements of red pixels, green pixels, and blue pixels in the display device.

Although FIG. 1 shows an example in which the inner peripheral surfaces of the pixel openings Or, Og, and Ob extend in the z-axis direction, the inner peripheral surfaces of the pixel openings Or, Og, and Ob may be inclined with respect to the z-axis. The inclination direction of each inner peripheral surface is not particularly limited. For example, from the viewpoint of light utilization efficiency of the light emitting element 24, when each inner peripheral surface is inclined, it is more preferable to be inclined so that the opening area expands as it progresses in the negative z-axis direction.

The first black matrix layer 1 can be formed by dispersing a black pigment having a visible light absorption function, such as carbon, in a resin.

In this embodiment, since the light-reflective matrix layer 6 described later is laminated on the surface of the first black matrix layer 1 in the negative z-axis direction, very high light-shielding property is not required.

The light-shielding property of the first black matrix layer 1 is sufficient, for example, in the range of 2 to 4 in terms of optical density OD.

The layer thickness of the first black matrix layer 1 is not particularly limited as long as the required light-shielding properties are obtained.

For example, the layer thickness of the first black matrix layer 1 may be 1 μm or more and 50 μm or less.

By setting the concentration of the black colorant slightly low, the layer thickness of the first black matrix layer 1 can be set to, for example, 10 μm or more. In the case of the first black matrix layer 1 having a layer thickness of 10 μm or more, it is more preferable because it can be formed according to the layer thickness required for the wavelength conversion layer 3 described later.

The optical density of the first black matrix layer 1 may be 4 or more, but this increases process load such as exposure time. When the optical density is 1 or less, external light is reflected by the metal thin film inside the display device 100 and is easily visible to the observer 59, which may lead to deterioration of the image quality of the display device 100.

The density of the black coloring material in the first black matrix layer 1 and the layer thickness of the first black matrix layer 1 can be set to an appropriate amount that allows the range of optical density as described above to be obtained.

As a black coloring material, in addition to carbon, carbon fiber, carbon nanotube, carbon nanohorn, carbon nanobrush, etc. can be applied.

If the necessary light-shielding properties are obtained, the coloring material used in the first black matrix layer 1 is not limited to the black coloring material. For example, in addition to the black colorant, an organic pigment such as a blue pigment may be added. For example, you may add a metal oxide, such as titanium black, to the 1st black matrix layer 1.

[Light reflective matrix layer]

The light reflective matrix layer 6 is formed of a thin film having light reflective properties and is placed on the lower surface 1b, which is the surface on the opposite side (z-axis positive direction) from the first substrate 110 in the first black matrix layer 1. They are stacked from the bottom.

The planar view shape of the light reflective matrix layer 6 may cover at least a portion of the lower surface 1b. That is, the light reflective matrix layer 6 may be laminated on the lower surface 1b excluding the plurality of pixel openings Or, Og, and Ob. It is more preferable that the light reflective matrix layer 6 has the same shape as the lower surface 1b and covers the entire lower surface 1b.

In the example shown in FIG. 1, the plan view shape of the light reflective matrix layer 6 is the same shape as the entire lower surface 1b of the first black matrix layer 1. For this reason, the plan view shape of the light reflective matrix layer 6 is a rectangular grid pattern similar to that of the first black matrix layer 1.

The material of the light reflective matrix layer 6 is not particularly limited as long as it can efficiently reflect the light emitted from the light emitting element 24. For example, the light reflective matrix layer 6 may be formed of a metal thin film made of any of aluminum, aluminum alloy, silver, and silver alloy. The film thickness of the light reflective matrix layer 6 may be, for example, 0.1 μm or more and 0.8 μm or less.

When the film thickness of the light reflective matrix layer 6 is 0.1 μm or more, high light blocking properties and high reflectance are obtained. For this reason, the light emitted from the light emitting element 24 can be reflected downward and reused efficiently.

The upper limit of the film thickness of the light reflective matrix layer 6 is not particularly limited, but may be 0.8 μm or less, for example, in cases where there is a risk of the substrate warping as the thickness of the metal thin film increases.

As the aluminum alloy used in the light reflective matrix layer 6, an aluminum alloy to which a small amount of a high melting point metal such as Mo or Ti, Si, or rare earth such as Nd (neodymium) is added can be adopted. From the viewpoint of reflectance, an aluminum alloy containing 0.2% by mass or more and 3% by mass or less of Nd is more preferable. If Nd is less than 0.2% by mass, aluminum crystals are likely to coarsen or hillocks are likely to form, so the reflectance is likely to be reduced. Additionally, when Nd exceeds 3% by mass, the reflectance tends to decrease. It is easy to stably reproduce high reflectance within the range where Nd is 0.2 mass% or more and 3 mass% or less.

In order to improve the adhesion of the light reflective matrix layer 6 to the first black matrix layer 1, an intermediate layer may be provided between the thin film having light reflective properties and the first black matrix layer 1. For example, in the case of a metal thin film in which the light-reflective thin film is formed of aluminum or an aluminum alloy, titanium, molybdenum, or nitrides of these high-melting point metals are particularly suitable as the intermediate layer.

When using a metal thin film formed of silver or silver alloy as the light reflective matrix layer 6, since silver or silver alloy has low adhesion to the first black matrix layer 1, the metal thin film is made of indium oxide or zinc oxide. It is particularly preferable to use a composition made of conductive oxides containing, for example.

Since silver atoms are easy to diffuse, when silver or a silver alloy is used, it is more preferable to add a dissimilar metal such as copper, gold, palladium, or zinc in the range of 0.1 mass% or more and 1.5 mass% or less. do.

The light reflective matrix layer 6 has a role of avoiding absorption of the light emitted from the light emitting element 24 by the first black matrix layer 1 and returning the emitted light to the light emitting element 24 side. The returned emitted light is reflected by a member having light reflection on the second substrate 120 side rather than the light reflection matrix layer 6 . As a result, at least a portion of the returned emitted light is recycled and the luminance of the display light of the display device 100 is improved. Specifically, the emitted light reflected by the light-reflective matrix layer 6 toward the outside of the pixel opening is transmitted to the lower part of the light-emitting element 24, the ambient light-reflective electrode of the light-emitting element 24, the partition wall 37, and the light-emitting element 24. By being reflected by the reflective matrix layer 6 and re-entering the pixel opening, luminance is improved.

In order to show this brightness improvement effect, FIG. 1 schematically illustrates the optical paths L1, L2, L2, L3, and L4 of light emitted from the side of the light emitting element 24 opposite the pixel opening Ob. Light from the side of the light-emitting element 24 (optical path: L1) is reflected by the partition 37 surrounding the light-emitting element 24, is emitted upward (light path: L2), and is emitted from the light-reflective matrix layer 6. is reflected again (optical path: L3), is reflected again by the lower reflective electrode 29 of the light emitting element 24 (optical path: L4), and enters the pixel opening Ob. The reflected light incident on the pixel opening Ob, together with the emitted light directly incident on the pixel opening Ob from the light emitting element 24, is utilized as display light of the display device 100.

On the other hand, when the light reflective matrix layer 6 is not formed adjacent to the pixel opening Ob, the light heading toward the optical path L1 is incident on the first black matrix layer 1, and the first black matrix layer 1 ) is absorbed.

When the light reflective matrix layer 6 has a metal thin film, the thermal conductivity of the light reflective matrix layer 6 becomes higher compared to the first black matrix layer 1. For this reason, heat dissipation to the surroundings of the light-emitting element 24 is promoted through the light-reflective matrix layer 6.

[Wavelength conversion layer]

The wavelength conversion layer 3 is a layered portion that converts the wavelength of light emitted from the light emitting element 24.

Here, wavelength conversion means receiving primary light emission from a light-emitting device such as LED or organic EL, and converting the primary light emission into secondary light having a different wavelength in the visible light region. As wavelength conversion, down conversion is common, which converts light with a short wavelength, such as blue or near-ultraviolet light, into light with a long wavelength, such as blue, green, or red.

The materials used for wavelength conversion are nanometer-sized semiconductor particles, which are called quantum dots and have a quantum confinement effect (hereinafter referred to as quantum dots), and EU (europium) and Ce (cerium), which are called rare earths. ), Y (yttrium), etc. can be classified into inorganic phosphors (hereinafter referred to as phosphors) represented by complex oxides or nitrides added with activators.

Compared to quantum dots, phosphors have a larger average particle diameter of 0.5 ㎛ to 30 ㎛, but because they sometimes go through a manufacturing process under high temperature and high pressure, they have high reliability such as heat resistance and light resistance.

Examples of quantum dots include II- such as MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe and HgTe. Group VI semiconductor compounds, such as AlN, AlP, AlAs, AlSb, GaAs, GaP, GaN, GaSb, InN, InAs, InP, InSb, TiN, TiP, TiAs and TiSb, Group IIIV semiconductor compounds such as Si, Ge and Pb In addition to semiconductor crystals containing group IV semiconductors and the like, semiconductor compounds containing three or more elements such as InGaP can be mentioned. The size of the quantum dot is, for example, in the range of 0.5 nm to 30 nm, and by increasing the particle size, the converted light shifts to the long wavelength side.

The wavelength conversion layer 3 may contain red conversion particles, green conversion particles, and blue conversion particles for obtaining red, green, and blue secondary light. Red conversion particles, green conversion particles, and blue conversion particles applicable to the wavelength conversion layer 3 are appropriately selected from quantum dots or phosphors. Hereinafter, when referring to any or all of red conversion particles, green conversion particles, and blue conversion particles, they may be referred to as conversion particles.

Red conversion particles refer to particles of phosphor or quantum dot that can receive blue light, purple, or near-ultraviolet light and convert it into red wavelength. Green conversion particles and blue conversion particles refer to particles of phosphor or quantum dot that can receive blue light or near-ultraviolet light and convert them into green or blue light, respectively.

In the wavelength conversion layer 3, in plan view, a plurality of types of layers containing different conversion particles may be arranged spaced apart from each other or adjacent to each other.

The wavelength conversion layer 3 may have a structure in which multiple types of layers individually containing multiple types of conversion particles are laminated. In this case, it is more preferable to arrange long-wavelength conversion particles, such as red, near the light-emitting element 24. It is more preferable that the conversion particles that convert into light with a shorter wavelength than red, such as green conversion particles or blue conversion particles, are placed further away from the light emitting element 24 than the red conversion particles.

Additionally, when the light emitting element 24 emits blue light, the wavelength conversion layer 3 that converts blue to blue may be omitted. In this case, instead of the wavelength conversion layer 3, a light scattering layer that scatters light may be provided.

When the light emitting element 24 emits near-ultraviolet light, the wavelength conversion layer 3 is provided with a red conversion layer, a green conversion layer, and a blue conversion layer each containing red conversion particles, green conversion particles, and blue conversion particles. It is more preferable.

The wavelength conversion layer 3 may be formed as a dispersion in which conversion particles are dispersed in a resin 15 having excellent heat resistance and light resistance.

Examples of the resin 15 used in the dispersion include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, polynorbornene resin, these modified resins, and hybrid resins. These resins are made by forming a liquid dispersion as a liquid resin using a monomer or an organic solvent, and then applying and curing the dispersion in a device such as a spin coater, slit coater, curtain coater, or inkjet to form a wavelength conversion layer ( 3) can be formed.

When using a phosphor as a conversion particle, it can be formed, for example, by applying a dispersion (dispersion) dispersed in an alkali-soluble photosensitive polymer resist and, if necessary, patterning by photolithography.

The wavelength conversion layer 3 may be formed directly on the surface of the first substrate 110 or the second substrate 120 by forming a dispersion using a printing technique.

As in the example shown in FIG. 1, transparent light scattering particles 17 can be mixed in the wavelength conversion layer 3, for example, in addition to the wavelength conversion materials such as quantum dots and phosphors described above.

As the light scattering particles 17, for example, transparent particles having an average particle diameter of 1.0 μm or more and 3.0 μm or less can be used. As the light scattering particles 17, it is easy to obtain appropriate light scattering properties by using particles having a particle diameter larger than the wavelength of visible light.

In addition, transparent fine particles having an average particle diameter of 0.05 μm or more and 0.3 μm or less may be used together in the wavelength conversion layer 3 as a dispersion aid that promotes dispersion of the light scattering particles 17.

For the light scattering particles 17, optically isotropic transparent particles can be used. “Optically isotropic” means that the transparent particles applied in the embodiment of the present invention have a crystal structure in which the a-axis, b-axis, and c-axis are equivalent, or are amorphous, and the propagation of light affects the crystal axis or crystal structure. It means that it is isotropic without receiving.

For example, silica particles have an amorphous structure (amorphous).

As resin particles such as resin beads, particles having various properties including refractive index are known. As the light scattering particles 17, optically isotropic resin particles such as resin beads can be used in combination with silica particles. For example, particles of resin such as acrylic, styrene, urethane, nylon, melamine, benzoguanamine, etc. may be used in combination with silica particles.

If the light scattering particles 17 are optically isotropic transparent particles, it becomes difficult for uneven light loss to occur when the display device 100 includes a circularly polarizing plate or a polarizing plate.

In a display device that does not require the use of a circularly polarizing plate or polarizing plate, uneven light quantity due to polarization does not occur, so the transparent particles do not have to be optically isotropic. For this reason, the selection range of transparent particles can be expanded. For example, zinc oxide particles can be used as transparent particles that can be added to the wavelength conversion layer 3. Zinc oxide has a high transmittance in the visible region with a wavelength of 400 nm to 700 nm and can absorb ultraviolet rays of 390 nm or less. From this viewpoint, in a display device that does not use a circularly polarizing plate, it is more preferable to use transparent particles or transparent fine particles of zinc oxide as the light scattering particles 17, for example.

The thickness of the wavelength conversion layer 3 can be 1 μm or more and 50 μm or less. Although it can be formed thicker than 50㎛, it is easy to waste process load due to thick formation, for example, work time such as application and drying. If the thickness of the wavelength conversion layer 3 is 1 μm or more and 50 μm or less, the film thickness of the first black matrix layer 1 can be adjusted to the thickness of the wavelength conversion layer 3.

In the example shown in FIG. 1, a red conversion layer 3R and a green conversion layer 3G are formed in the pixel openings Or and Og of the wavelength conversion layer 3, respectively.

In the red conversion layer 3R, red conversion particles 12 and light scattering particles 17, which are optically isotropic transparent particles, are dispersed in the resin 15.

In the green conversion layer 3G, green conversion particles 13 and light scattering particles 17, which are optically isotropic transparent particles, are dispersed in the resin 15.

In the example shown in FIG. 1, the light-emitting element 24 facing the pixel opening Ob is a blue LED, so the pixel opening Ob has a light scattering layer 3B that scatters the light emitted from the blue LED without converting the wavelength. It is formed.

The red conversion layer 3R, the green conversion layer 3G, and the light scattering layer 3B are inside the pixel openings Or, Og, and Ob, respectively, and the first black matrix layer 1 and the light reflective matrix layer 6 ) is formed with a layer thickness equal to the total thickness of. For this reason, the upper surface of each of the red conversion layer 3R, the green conversion layer 3G, and the light scattering layer 3B is on the first substrate 110 side (z-axis portion) in the first black matrix layer 1. There is no step with the upper surface (1a), which is the surface of the direction (direction).

The red conversion layer 3R and the green conversion layer 3G shown in FIG. 1 are examples of wavelength conversion layers 3 arranged to be spaced apart from each other in plan view.

[Light scattering layer]

Here, the light scattering layer 3B is explained.

The light scattering layer 3B is formed similarly to the red conversion layer 3R and the green conversion layer 3G, except that it does not contain conversion particles. That is, the light scattering layer 3B is formed by dispersing the light scattering particles 17 in a transparent resin similar to the red conversion layer 3R and the green conversion layer 3G. The light scattering layer 3B may contain a dispersion aid similar to that of the red conversion layer 3R and the green conversion layer 3G.

In the example shown in FIG. 1, the light scattering particles 17 included in the light scattering layer 3B are optically isotropic transparent particles.

[Color Filter]

The color filter 2 is disposed between the wavelength conversion layer 3 and the first substrate 110 and faces the first substrate 110. The color filter 2 regulates the wavelength range of light emitted from the wavelength conversion layer 3 toward the first substrate 110.

For example, the color filter 2 includes a red filter (R) that regulates the transmitted light to the red wavelength range, a green filter (G) that regulates the transmitted light to the green wavelength range, and a green filter (G) that regulates the transmitted light to the blue wavelength range. It is equipped with a blue filter (B).

The red filter R is disposed between the pixel opening Or and the first substrate 110.

The rust filter G is disposed between the pixel opening Og and the first substrate 110 .

The blue filter B is disposed between the pixel opening Ob and the first substrate 110.

The red filter (R), green filter (G), and blue filter (B) may be separated from each other or may be adjacent to each other.

In the example shown in FIG. 1, they are adjacent to each other on the upper surface 1a of the first black matrix layer 1. For this reason, the color filter 2 is formed as a layer covering the first black matrix layer 1, the wavelength conversion layer 3, and the light scattering layer 3B as a whole.

In the example shown in FIG. 1, the upper surface of the color filter 2 is laminated on the first substrate 110 with a transmittance adjustment layer 7, which will be described later, interposed therebetween.

The color filter 2 may be formed by lamination on a laminate including the first substrate 110 and the transmittance adjustment layer 7, and the first black matrix layer 1 laminated on the first substrate 110. , may be formed by laminating them on the wavelength conversion layer 3 and the light scattering layer 3B.

The color filter 2 can be formed by dispersing an organic pigment in a transparent resin such as acrylic.

As a red organic pigment applicable to the red filter (R), for example, C.I. Pigment Red 7, 14, 41, 48:2, 48:3, 48:4, 81:1, 81:2, 81: Red pigments such as 3, 81:4, 146, 168, 177, 178, 179, 184, 185, 187, 200, 202, 208, 210, 246, 254, 255, 264, 270, 272, 279, etc. there is. In the red filter (R), a yellow pigment or an orange pigment can also be used in combination with the red pigment.

For example, as a yellow organic pigment applicable to the color filter 2, C.I. Pigment Yellow 1, 2, 3, 4, 5, 6, 10, 12, 13, 14, 15, 16, 17, 18, 24, 31, 32, 34, 35, 35:1, 36, 36:1, 37, 37:1, 40, 42, 43, 53, 55, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 106, 108, 109, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 126, 127, 128, 129, 147, 151, 152, 153, 154, 155, 1 56, 161, 162, 164, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 179, 180, 181, 182, 187, 188, 193, 194, 199, 1 98, Examples include 213 and 214.

Examples of green organic pigments applicable to the rust filter (G) include green pigments such as C.I. Pigment Green 7, 10, 36, and 37. Additionally, a halogenated zinc phthalocyanine green pigment or a halogenated aluminum phthalocyanine green pigment can also be suitably used in the rust filter (G).

In the rust filter (G), in addition to the green pigment, the above-mentioned yellow pigment can also be used together.

As a blue organic pigment applicable to the blue filter (B), for example, C.I. Pigment Blue 15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 22, 60, Blue pigments such as 64 can be mentioned.

In addition to the blue pigment, a purple pigment can also be used in the blue filter (B). Examples of the purple pigment include C.I.PigmentViolet 1, 19, 23, 27, 29, 30, 32, 37, 40, 42, 50, etc.

These organic pigments are used by dispersing them in a transparent resin together with an organic solvent or dispersant. The transparent resin is more preferably a transparent resin having a transmittance of 90% or more in the visible region, and is more preferably an alkali-soluble photosensitive resin containing a resin precursor.

When manufacturing the color filter 2, the organic pigment can be contained within the range of 15% by mass to 60% by mass relative to the transparent resin.

As a photosensitive resin suitable for the color filter 2, a linear polymer having a reactive substituent such as a hydroxyl group, carboxyl group, or amino group is reacted with a (meth)acrylic compound or cinnamic acid having a reactive substituent such as an isocyanate group, an aldehyde group, or an epoxy group, Resins in which photocrosslinkable groups such as (meth)acryloyl group and styryl group are introduced into the linear polymer are included.

Monomers and oligomers that are precursors of a transparent resin suitable for the color filter (2) include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, cyclohexyl (meth)acrylate, and polyethylene glycol dimethyl ester. (meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tricyclodecanyl(meth)acrylate, melamine (meth)acrylate ) Acrylate, epoxy (meth)acrylate, various acrylic acid esters and methacrylic acid esters, (meth)acrylic acid, styrene, vinyl acetate, (meth)acrylamide, N-hydroxymethyl (meth)acrylamide, acrylic acid Nitrile, etc. can be mentioned. These can be used individually or in mixture of two or more types.

When curing a transparent resin in which an organic pigment is dispersed by, for example, irradiation of ultraviolet rays with a light wavelength of 365 nm, a photopolymerization initiator and the like are further added.

[Transmittance adjustment layer]

The transmittance adjustment layer 7 is a layer that adjusts the transmittance of external light incident on the display device 100 and reflected light from the display device 100 to improve visibility. The transmittance adjustment layer 7 serves to reduce the total reflectance of the surface layer and the interior of the display device 100 by reducing the transmittance of reflected light from the surface layer and the interior of the display device 100 to the outside.

The transmittance adjustment layer 7 is disposed between the first substrate 110 and the wavelength conversion layer 3. However, it is more preferable that the transmittance adjustment layer 7 is disposed near the first substrate 110 so as to suppress various types of reflected light from the inside of the display device 100.

By providing the transmittance adjustment layer 7, external light reflection in the light reflective member on the z-axis positive direction side is suppressed compared to the transmittance adjustment layer 7, and the display screen of the display device 100 from the perspective of the viewer 59 visibility can be improved.

In the example shown in FIG. 1, the transmittance adjustment layer 7 is laminated on the surface 110b of the first substrate 110.

In this case, examples of the light reflective member on the z-axis positive direction side of the transmittance adjustment layer 7 include the wavelength conversion layer 3, the reflective electrode 29, and the light emitting element 24 when not lit. . In addition, since the transmittance adjustment layer 7 is disposed closer to the first substrate 110 than the first black matrix layer 1, it is possible to reduce reflected light from the reflective surface of the first black matrix layer 1. . For this reason, even when a reflective surface is formed on the surface of the first black matrix layer 1 facing the first substrate 110, external light reflection in the first black matrix layer 1 can be suppressed. .

The configuration of the transmittance adjustment layer 7 is not particularly limited as long as the transmittance of the visible light component included in external light can be regulated. For example, the transmittance adjustment layer 7 may be a resin dispersion in which at least carbon is dispersed in a resin.

The resin used for the transmittance adjustment layer 7 is not particularly limited as long as it can provide the necessary reliability, such as heat resistance. For example, a photosensitive resin capable of alkali development may be used, or a thermosetting resin may be used. Examples of thermosetting resins include resins having at least one functional group selected from epoxy groups, methylol groups, alkoxymethyl groups, and acyloxy methyl groups.

The transmittance adjustment layer 7 can be formed by adding a particulate additive containing at least carbon and an organic solvent to the above-described resin, forming a coating liquid in which the additive is dispersed, applying the coating liquid to the film-forming surface, and curing it. .

The transmittance adjustment layer 7 may be a resin dispersion containing carbon as the main pigment.

The transmittance of the transmittance adjustment layer 7 for visible light is not particularly limited as long as the luminance of the display light required for the first substrate 110 and the suppression of external light reflection are possible. For example, it is more preferable that the transmittance of the transmittance adjustment layer 7 for visible light is in the range of 70% or more and 99.7% or less.

The amount of carbon added to the resin in the transmittance adjustment layer 7 is appropriately set according to the required transmittance. For example, a transmittance in the range of 70% to 99.7% can be easily achieved by adding the carbon, which is a black pigment, within the range of, for example, 0.2 wt% to 8 wt%, based on the resin solid content. If the carbon addition amount exceeds 9 wt% or even 10 wt%, the transmittance of the transmittance adjustment layer decreases too much.

The transmittance adjustment layer 7 may contain organic pigments such as transparent fine particles or blue pigments in addition to carbon.

The film thickness of the transmittance adjustment layer 7 is not particularly limited as long as the required transmittance is obtained. For example, the thickness of the transmittance adjustment layer 7 is more preferably in the range of .0.1 μm or more and 1 μm or less, but the thickness may exceed 1 μm.

In micro LED or organic EL display devices, a light-reflective electrode is often provided below the LED or organic EL layer, which is a light-emitting element. In a micro LED or organic EL display device having such a structure, re-reflected light of external incident light by the light-reflective electrode enters the observer's eyes, reducing visibility. In micro LED and organic EL display devices, an expensive circular polarizing plate is usually used in the display device to eliminate re-reflected light of external incident light. The visible light transmittance of the circularly polarizing plate is about 50%.

Since the transmittance adjustment layer 7 is provided in the display device 100 of this embodiment, re-reflected light such as external incident light (outside light) by internal light reflective members of the display device 100 such as light reflective electrodes can be suppressed.

When external light enters the display device 100 from the first substrate 110 side, the external light passes through the transmittance adjustment layer 7 once and is then reflected by the internal light reflective member of the display device 100. Afterwards, it passes through the transmittance adjustment layer 7 again and is emitted toward the observer 59. In this way, external light is emitted from the display device 100 by passing through the transmittance adjustment layer 7 twice. Among the reflected light of external light, the amount of light that can be emitted to the outside is the amount of incident light multiplied by the square of the transmittance of the transmittance adjustment layer 7. Therefore, compared to the case without the transmittance adjustment layer 7, the emitted light of reflected external light is significantly attenuated. do.

For example, if the transmittance of the transmittance adjustment layer 7 to visible light is 70%, this corresponds to the reflectance of the internal light reflective member being substantially 49%, so a circle with a transmittance of 50% is used instead of the transmittance adjustment layer 7. The effect of suppressing external light reflection is higher than that of a display device having a polarizing plate. While the circularly polarizing plate transmits only 50% of the display light from the light emitting element, in the display device 100 having the transmittance adjustment layer 7 instead of the circularly polarizing plate 11, only 50% of the display light emitted from the light emitting element 24 is transmitted. Since 70% is transmitted, a brighter display is possible.

The display device 100, which does not have a circular polarizer 11 and has a transmittance adjustment layer 7 with a visible light transmittance of about 70%, can be formed inexpensively because it does not have an expensive circular polarizer 11, and suppresses external light reflection. A bright display becomes possible.

According to the transmittance adjustment layer 7, the transmittance of the display light is always greater than the actual reflectance of the external light, so the luminance of the reflected light of the external light can be suppressed compared to the luminance of the display light. For example, if the transmittance of the transmittance adjustment layer 7 is less than 70% but is 50% or more, the brightness of the display light is equal to or higher than that of a display device having a circular polarizer with a transmittance of 50%, and the amount of external light reflection is significantly suppressed. Display contrast is improved and a low-cost configuration can be achieved.

When the display device 100 includes the circularly polarizing plate 11, external light reflection is suppressed also by the circularly polarizing plate 11, so the transmittance of the transmittance adjustment layer 7 is 70% in the range where the necessary effect of suppressing external light reflection is obtained. A value higher than % is more preferable. In this case, depending on the transmittance of the transmittance adjustment layer 7, the contrast of the display light, which is prone to a relative difference between the reflection of external light and the brightness of the display light, is improved.

Additionally, many liquid crystal display devices use two cross-Nicol polarizing plates (polarization axes are perpendicular to each other). When using such a circularly polarizing plate or polarizing plate, for the purpose of improving dispersibility or lowering the refractive index of the semi-transmissive film, optically isotropic, transparent fine particles that do not cause polarization collapse and are transparent in the visible region are used to increase the transmittance. It can be added to the adjustment layer (7).

For example, when the transmittance adjustment layer 7 is made of a transparent inorganic film or a resin film with a visible light transmittance close to 100%, the light reflection at the interface with the first black matrix layer 1 causes interference. There are cases where ripple occurs. In this case, the first black matrix layer 1 may be observed to be slightly colored. This slight coloring due to reflected light is easily observed during black display with the display of the display device 100 turned off. In this case, when viewed from an oblique direction by an observer, it may appear rainbow-colored, which tends to reduce visibility.

On the other hand, by using silica fine particles and carbon together to form the transmittance adjustment layer 7, the effect of reducing the size of these ripples is obtained. Also from the above viewpoint, the transmittance adjustment layer 7 containing transparent fine particles in the visible region is useful. The same effect can be obtained even if a low concentration of carbon is included without containing silica fine particles.

The particle size of transparent particles such as silica fine particles used in combination with carbon is not particularly limited, but, for example, transparent particles with an average primary particle diameter of 3 nm to 100 nm can be applied.

In addition, when the transmittance adjustment layer 7 is formed with an organic pigment as the main pigment component, the reflected light of external light at the interface with the first black matrix layer 1 may appear colored yellow.

On the other hand, the transmittance adjustment layer 7 containing carbon as the main pigment component has almost flat reflected light and is rarely colored. The fact that the reflected light is flat means that in the visible range of the light wavelength of 400 nm to 700 nm, for example, in a small range such as 50 nm, the transmittance has no irregularities (fluctuations) of 2% or more and the transmittance curve is close to a straight line. means to obtain.

The transmittance adjustment layer 7 containing carbon as the main pigment component, for example, when the visible range of 400 nm to 700 nm is divided into 50 nm units, the reflectance variation (ripple) within the 50 nm unit ) can be set to 1.0% or less. Moreover, in the visible range of the light wavelength of 400 nm to 700 nm, the reflectance at the interface with the first black matrix layer 1 can be within the range of 0.01% or more and 1.0% or less. In addition, the reflectance fluctuation (ripple) is the difference in the peaks and valleys of the reflectance spectral curve within the above-mentioned 50 nm unit of the reflectance measured in the range of the visible region of the light wavelength of 400 nm to 700 nm, but it is a simple evaluation You may use the value of the reflectance peak within a unit of 50 nm. In the latter simple evaluation, the value of reflectance fluctuation appears to be large in appearance.

However, the reflectance here is a reflectance measured through the first substrate 110 and the transmittance adjustment layer 7, using the reflectance of the aluminum film as a standard (100%). Measurement can be easily performed using, for example, a microspectrophotometer.

Additionally, in the transmittance spectrum of carbon, the transmittance of red is slightly higher. In order to make the transmittance spectrum of the transmittance adjustment layer 7 flatter, the transmittance adjustment layer 7 may contain a blue pigment with a high red absorption rate together with carbon.

The display device 100 of this embodiment includes a first substrate 110, a color filter 2, a wavelength conversion layer 3, a first black matrix layer 1, and a light reflective matrix layer 6. The laminate that forms the upper layer of the display device 100 constitutes the wavelength conversion substrate 130 of this embodiment used in the display device 100 of this embodiment.

The wavelength conversion substrate 130 may further include at least one of the circularly polarizing plate 11, the transmittance adjustment layer 7, and the transparent resin adhesive layer 9.

The manufacturing method of the display device 100 of this embodiment is not particularly limited as long as the above-described laminated structure can be formed.

For example, the display device 100 includes an upper laminated body 100A on the z-axis negative direction side compared to the transparent resin adhesive layer 9, and a lower laminated body 100B on the z-axis positive direction side compared to the transparent resin adhesive layer 9. are formed, respectively, and the upper laminated body 100A and the lower laminated body 100B are manufactured by bonding them with an adhesive that forms the transparent resin adhesive layer 9.

The upper laminate 100A can be formed as follows. First, if necessary, a color filter 2, a first black matrix layer ( 1) and the light reflective matrix layer 6 are formed in this order, and pixel openings Or, Og, and Ob penetrating the first black matrix layer 1 and the light reflective matrix layer 6 are formed. Thereafter, a red conversion layer 3R, a green conversion layer 3G, and a light scattering layer 3B are laminated on each of the pixel openings Or, Og, and Ob. As a result, the upper laminate 100A is formed.

The lower laminate 100B can be formed as follows. First, a third insulating layer 36, a second insulating layer 35, and a first insulating layer are formed on the upper surface 120a of the second substrate 120 on which the heat dissipation film 10 is laminated as necessary on the lower surface 120b. The layers 34 are stacked in this order to form a thin film transistor (not shown). The light emitting element 24 is formed or placed on the first insulating layer 34, and the partition wall 37 is formed. Thereafter, the upper electrode 23 covering the light emitting element 24 and the partition wall 37 is stacked, and if necessary, the auxiliary conductor 31 is disposed. As a result, the lower laminate 100B is formed.

Thereafter, an adhesive that will become the transparent resin adhesive layer 9 after curing is applied to the lower surface of the upper laminate 100A or the upper surface of the lower laminate 100B, and the upper laminate 100A and the lower laminate 100B are formed. Join and cure the adhesive. In this way, the display device 100 can be manufactured.

In this way, if the upper laminate 100A and the lower laminate 100B are stacked, for example, repair (replacement) of a defective chip of the light emitting element 24 mounted on the second substrate 120 is possible. It's easy.

However, the manufacturing method of the display device 100 is not limited to this. For example, each layer of the display device 100 may be sequentially formed on the second substrate 120 or on the first substrate 110.

It is more preferable to form the color filter 2 on a laminate including the first substrate 110, but it may also be laminated in the form of an on-array on the laminate including the second substrate 120.

Next, the operation of the display device 100 will be described.

The plurality of light-emitting elements 24 are controlled to emit light according to a video signal input from the outside. For example, the light emitting element 24 facing the red conversion layer 3R is driven with an image signal corresponding to the red component. The light emitting element 24 facing the green conversion layer 3G is driven with an image signal corresponding to the green component. The light emitting element 24 facing the light scattering layer 3B is driven with an image signal corresponding to the blue component.

Any light emitting element 24, when driven, emits monochromatic light of blue light or near-ultraviolet color. Below, an example in which the light emitting device 24 emits blue light will be described.

For example, the blue light emitted from the light emitting element 24 facing the red conversion layer 3R passes through the upper electrode 23 and the transparent resin adhesive layer 9 and diffuses around the negative z-axis direction. . The light incident on the pixel opening Or is scattered by the light scattering particles 17 and interacts with the red conversion particles 12, and the wavelength is converted into red secondary light by the red conversion particles 12. The secondary light passes through the red filter R and heads toward the first substrate 110. The red filter (R) transmits red light wavelengths with little loss. On the other hand, wavelength components whose wavelengths are not converted by the red conversion particles 12 are blocked by the red filter R.

When the display device 100 has the transmittance adjustment layer 7, the red light passing through the red filter R is attenuated according to the transmittance of the transmittance adjustment layer 7.

When the display device 100 has the circularly polarizing plate 11, the polarization component of the circularly polarizing plate 11 orthogonal to the absorption axis of the linearly polarizing plate transmits the circularly polarizing plate 11.

In this way, the blue light driven by the image signal corresponding to the red component is wavelength converted into red light in the red conversion layer 3R, passes through the first substrate 110, and is emitted to the outside.

In contrast, blue light that cannot be directly incident on the pixel opening Or by, for example, emitted from the side of the light emitting element 24 or radiated in an oblique direction, or blue light that is scattered downward even if it enters the pixel opening Or, is light. It is reflected downward by the reflective matrix layer 6. This blue light is reflected upward by the light reflective member inside the display device 100 below the light reflective matrix layer 6, and at least part of it enters the pixel opening Or. For this reason, in this embodiment, the optical loss of blue light incident on the pixel opening Or is reduced.

In particular, in the example shown in FIG. 1, the light reflective matrix layer 6 is laminated on the entire lower surface of the first black matrix layer 1 surrounding the pixel opening Or. For this reason, since light is not absorbed by the first black matrix layer 1, blue light can be reflected more efficiently.

Blue light emitted from the light emitting element 24 facing the green conversion layer 3G enters the pixel opening Og or the light reflective matrix layer 6 around the pixel opening Og. The blue light emitted from the light emitting element 24 facing the green conversion layer 3G is wavelength converted into green secondary light when passing through the pixel opening Og, and the light emitting element facing the red conversion layer 3R In the same manner as the blue light emitted from (24), green light is emitted from the first substrate 110.

Blue light emitted from the light emitting element 24 facing the light scattering layer 3B enters the pixel opening Ob or the light reflective matrix layer 6 around the pixel opening Ob. The blue light emitted from the light-emitting element 24 facing the light-scattering layer 3B is not converted into wavelength when passing through the pixel opening Ob, but is scattered by the light-scattering particles 17, except for the red-conversion layer 3R. Blue light is emitted from the first substrate 110 in the same manner as the blue light emitted from the light emitting element 24 facing.

In this embodiment, each light-emitting element 24 is surrounded by a partition 37 whose width is narrowed toward the negative z-axis direction, so that the light component emitted from the side is directed to the pixel opening Or, which the light-emitting element 24 faces. It is easy to go to Og and Ob. Additionally, the pixel openings Or, Og, and Ob are separated from each other in plan view by the first black matrix layer 1. For this reason, color mixing caused by light emitted from adjacent light-emitting elements 24 driven by different image signals is prevented.

In the case of the display device 100 having at least one of the transmittance adjustment layer 7 and the circular polarizing plate 11, as described above, the reflected light of the external light incident on the inside of the display device 100 from the outside is attenuated, so the external light Deterioration of the contrast of display light due to the influence of reflection is suppressed.

As described above, the display device 100 of this embodiment includes a transparent first substrate 110 and a color filter 2 facing the first substrate 110 in the thickness direction of the first substrate 110. and a first black matrix layer 1 disposed opposite to the first substrate 110 and formed with a plurality of pixel openings Or, Og, and Ob opening toward the color filter 2, and a first black matrix layer ( A light reflective matrix layer 6 laminated on the lower surface 1b, which is the surface opposite to the first substrate in 1), excluding the plurality of pixel openings Or, Og, and Ob, and a plurality of pixel openings in plan view. A color filter ( 2), from the side opposite to the first substrate 110 across the wavelength conversion layer 3, which converts the wavelength of light heading toward the light, and the first black matrix layer 1, toward each of the plurality of pixel openings Or, Og, and Ob. It is provided with a plurality of light-emitting elements 24 that emit light, and a second substrate 120 on which the plurality of light-emitting elements 24 are disposed and opposite to the first substrate 110 .

That is, the display device 100 of this embodiment includes a wavelength conversion substrate 130, a plurality of light emitting elements 24, and a second substrate 120.

With this configuration, the display device 100 of the present embodiment and the wavelength conversion substrate 130 used therein both have the light reflective matrix layer 6 and do not have the light reflective matrix layer 6. Compared to this case, the brightness of the display can be improved.

In particular, in this embodiment, blue light can be independently converted into red and blue by the red conversion layer 3R and the green conversion layer 3G, so compared to the case of forming white light from blue light, the light emitting element The luminance of (24) can be reduced. As a result, heat generation of the light emitting element 24 can be suppressed.

[Second Embodiment]

A display device and a wavelength conversion substrate according to the second embodiment will be described.

Figure 2 is a partial cross-sectional view of a display device according to a first embodiment of the present invention. FIG. 3 is an enlarged view of portion F3 in FIG. 2.

The display device 200 shown in FIG. 2 is an example of a display device according to this embodiment. The x-axis, y-axis, and z-axis shown in FIG. 2 are defined similarly to FIG. 1. The same applies to the x-axis, y-axis, and z-axis in other drawings below.

The display device 200 except that the second black matrix layer 8 is further disposed between the color filter 2 and the first substrate 110 in the display device 100 according to the first embodiment. , has the same configuration as the display device 100. For this reason, the display device 200 has the wavelength conversion substrate 230 of this embodiment in which the second black matrix layer 8 is added to the wavelength conversion substrate 130 of the first embodiment.

Hereinafter, description will be given focusing on differences from the first embodiment.

[Second black matrix layer]

The position of the second black matrix layer 8 in the z-axis direction is not particularly limited as long as it is biased toward the first substrate 110 rather than the upper surface 1a of the first black matrix layer 1. However, the closer the second black matrix layer 8 is to the first substrate 110, the more preferable it is.

In the example shown in FIG. 2, it is disposed at a position away from the upper surface 1a with the color filter 2 interposed therebetween, and the upper surface of the second black matrix layer 8 is in contact with the lower surface of the transmittance adjustment layer 7. there is.

By positioning the second black matrix layer 8 below the transmittance adjustment layer 7, reflection of external light on the surface of the second black matrix layer 8 can be reduced.

When the transmittance adjustment layer 7 is not provided, the second black matrix layer 8 may be in contact with the surface 110b of the first substrate 110.

The planar view shape of the second black matrix layer 8 is the same matrix shape as that of the first black matrix layer 1. The planar view shape of the second black matrix layer 8 may be the same shape that overlaps the planar view shape of the first black matrix layer 1, or may be a shape that overlaps the inside of the first black matrix layer 1. When the second black matrix layer 8 has a shape that overlaps the inside of the first black matrix layer 1, the line width of the second black matrix layer 8 is closer to the line width of the first black matrix layer 1. This is more preferable.

However, when at least one of the line width and the arrangement position changes due to a manufacturing error, or when there is leeway in the amount of light of the light emitting element 24, a portion of the first black matrix layer 1 is 2 It may protrude from the black matrix layer 8 to some extent.

In the example shown in FIG. 2, the planar view shape of the 2nd black matrix layer 8 is the same shape as the 1st black matrix layer 1, and they overlap each other in planar view.

That is, the plan view shape of the second black matrix layer 8 is a rectangular grid pattern, and the line width centers in the first direction (X direction) and the second direction (Y direction) are the first black matrix layer (1). is the same as the center of the line width.

Openings Or, og, and Ob of the same shape as the pixel openings Or, Og, and Ob of the first black matrix layer 1 are penetrating through the second black matrix layer 8 in the thickness direction.

The centers of the openings or, og, and ob coincide with the centers of the corresponding pixel openings Or, Og, and Ob, respectively, in plan view.

The second black matrix layer 8 is formed in the same shape as the first black matrix layer 1 except for the layer thickness and the position in the z-axis direction. In particular, in the example shown in FIG. 2, the line width of the second black matrix layer 8 is also the same as that of the first black matrix layer 1.

According to the display device 200 of the present embodiment, the second black matrix layer 8 is disposed above the upper surface 1a of the first black matrix layer 1, and thus the pixel emission is emitted from the pixel openings Or, Og, and Ob. Among the emitted light, the light that travels in an oblique direction toward the outside of the pixel openings Or, Og, and Ob as it travels in the negative direction of the z-axis is outside the openings Or, og, and Ob of the second black matrix layer 8. Light is shielded from the back side of the second black matrix layer 8.

As a result, among the light heading toward the first substrate 110 from the openings or, og, and ob, stray light in an oblique direction toward adjacent pixels is blocked, thereby reducing color mixing between adjacent pixels, thereby improving display quality.

The closer the size of the openings or, og, and ob is to the size of the pixel openings Or, Og, and Ob, the more the display quality can be improved.

For example, even if the line width of the second black matrix layer 8 is the line width of the first black matrix layer 1, the second black matrix layer 8 is not matrix-like and extends in the x-axis direction or the y-axis direction. If it is stripe-shaped, the emitted light that spreads in the extension direction from the pixels adjacent to each other in the extension direction of the second black matrix layer 8 cannot be regulated, so color mixing in the extension direction is likely to occur.

Since the second black matrix layer 8 is a matrix similar to the first black matrix layer 1, color mixing with any of the pixels adjacent to the x-axis direction and the y-axis direction can be suppressed.

Here, the configuration briefly explained in the first embodiment will be explained in more detail. In the following description, unless otherwise specified, a similar configuration is possible for members with the same symbols in the first embodiment.

FIG. 3 is an enlarged view of portion B in FIG. 2.

The light reflective matrix layer 6 shown in FIG. 3 is an example made of a metal thin film 22 formed of aluminum or aluminum alloy. The conditions under which aluminum or aluminum alloy is more preferable for use in the metal thin film 22 are the same as those described with respect to the light reflective matrix layer 6 of the first embodiment.

The light reflective matrix layer 6 shown in FIG. 3 may be replaced with Modification Example 1 shown in FIG. 4.

FIG. 4 is a modification example 1 of the light reflective matrix layer shown in FIG. 2.

Modification 1 of the light reflective matrix layer 6 shown in FIG. 4 includes a first conductive oxide thin film 18, a metal thin film 19, and a second layer on the lower surface 1b of the first black matrix layer 1. It has a three-layer structure in which the conductive oxide thin film 20 is laminated in this order.

As a material for the metal thin film 19, silver or a silver alloy is used. For the purpose of suppressing the diffusion of silver into silver or silver alloy, a different metal may be added as explained with respect to the light reflective matrix layer 6 of the first embodiment. For this reason, the metal thin film 19 just needs to contain silver or a silver alloy.

The thickness of the metal thin film 19 can be, for example, 100 nm or more and 300 nm or less.

However, the thickness of the metal thin film 19 may be thicker than 300 nm. In this case, since the heat generated by the light-emitting element 24 is easily spread through heat conduction through the metal thin film 19, it is possible to reduce the temperature rise in the vicinity of the light-emitting element 24 due to heat generation by the light-emitting element 24. You can.

The first conductive oxide thin film 18 and the second conductive oxide thin film 20 contain indium oxide and are conductive thin films. The first conductive oxide thin film 18 and the second conductive oxide thin film 20 may contain, in addition to indium oxide, metal oxides such as zinc oxide, tin oxide, and titanium oxide, for example.

The film thickness of the first conductive oxide thin film 18 and the second conductive oxide thin film 20 can be, for example, 10 nm or more and 50 nm or less. However, the film thickness of the first conductive oxide thin film 18 and the film thickness of the second conductive oxide thin film 20 may be equal to or different from each other.

Since the first conductive oxide thin film 18 and the second conductive oxide thin film 20 are sandwiched between the metal thin film 19 containing silver or a silver alloy, diffusion of silver atoms of the metal thin film 19 can be prevented. You can.

Since the second conductive oxide thin film 20 has good transmittance, the first modification of the light reflective matrix layer 6 has light reflectivity due to the light reflectivity of the metal thin film 19.

The light reflective matrix layer 6 shown in FIG. 3 may be replaced with Modification Example 2 shown in FIG. 5.

FIG. 5 is a second modification of the light reflective matrix layer shown in FIG. 3.

Modification 2 of the light reflective matrix 6 shown in FIG. 3 is a two-layer structure in which a thin film 21 and a metal thin film 22 are laminated in this order on the lower surface 1b of the first black matrix layer 1. It is a composition.

That is, Modification 2 of the light reflective matrix layer 6 is different from the light reflective matrix layer 6 shown in FIG. 6 in that the thin film 21 is disposed between the metal thin film 22 and the lower surface 1b. .

The thin film 21 is provided for the purpose of improving the adhesion between the metal thin film 22 and the first black matrix layer 1.

As a material for the thin film 21, titanium or titanium nitride is suitable because the metal thin film 22 contains aluminum or an aluminum alloy. Since the lower surface of the thin film 21 is covered with the metal thin film 22, the thin film 21 does not need to have light transparency.

The thickness of the thin film 21 is not particularly limited as long as adhesion to the metal thin film 22 is obtained.

Since the thin film 21 has good adhesion to the first black matrix layer 1 and the metal thin film 22, the metal thin film 22 is firmly adhered to the first black matrix layer 1. . For this reason, peeling of the metal thin film 22 can be prevented, for example, during substrate cleaning or transportation in the manufacturing process.

For example, when using a metal thin film made of a metal other than aluminum or an aluminum alloy instead of the metal thin film 22, the material of the thin film 21 may also be changed depending on the material of the metal thin film. For example, molybdenum, molybdenum nitride, etc. may be used as the metal thin film.

Next, an example of the detailed structure of the surrounding light emitting element 24 and the thin film transistor will be described.

FIG. 6 is an enlarged view of portion F6 in FIG. 2.

As shown in FIG. 6, the light emitting element 24 is driven through the lower electrode 28, the reflective electrode 29, and the connection layer 30 embedded in the contact hole 32. It is electrically connected to a thin film transistor 49.

The thin film transistor 49 is formed inside the third insulating layer 36 and the second insulating layer 35. The number and thickness of the insulating layers such as the first insulating layer 34, the second insulating layer 35, and the third insulating layer 36 are not limited to the illustration.

The thin film transistor 49 is composed of a semiconductor layer 38, a gate electrode 39, a gate insulating film 33, a drain electrode 40, a source electrode 41, and a light blocking film 42.

The drain electrode 40 is electrically connected to the connection layer 30.

Conductive parts such as the gate electrode 39, drain electrode 40, source electrode 41, and connection layer 30 are formed of any of silver, silver alloy, copper, and copper alloy. Additionally, the conductive portion may be formed of three layers of conductive wiring made of silver or silver alloy sandwiched between conductive oxides. The structure and materials of these conductive wirings may be the same as those of Modified Example 1 of the light reflective matrix layer 6 shown in FIG. 4 .

Figure 7 is an example of a circuit diagram for driving a light-emitting device with a thin film transistor, etc.

The pixel PX includes one or more (one as shown) light emitting element 24 and two or more (two as shown) thin film transistors 49, and a plurality of pixels PX are arranged in a matrix. It is done. Each thin film transistor 49 in the pixel PX receives the gate signal from the scan signal circuit 43 through the gate line 48, which is a conductive line, and the image signal from the image signal circuit through the source line 46, which is a conductive line. and drives the light emitting element 24. Power to the light emitting element 24 is supplied from the power line 47, which is a conductive wire. The light emitting element 24 emits light according to the amount of current from the power line 47.

In FIG. 7, symbol 50 denotes a first thin film transistor, symbol 51 denotes a second thin film transistor, and symbol 52 denotes a capacitor element. The first thin film transistor 50 receives the image signal from the source line 46 and the scanning signal from the gate line 48 and sends a selection signal to the second thin film transistor 51, Run . The second thin film transistor 51 receives the selection signal and flows current from the power line 47 to the light emitting element 24 (LED), causing the LED to emit light. Additionally, the capacitive element 52 stabilizes the voltage applied to the light emitting element 24.

Figure 8 is a partial plan view showing the top view shape of the auxiliary conductor and the light reflective matrix layer.

As shown in FIG. 8, the plan view shape of the auxiliary conductor 31 is a matrix shape similar to that of the first black matrix layer 1 and the light reflective matrix layer 6. However, the line width Cx in the x-axis direction of the auxiliary conductor 31 is narrower than the line width Bx in the x-axis direction of the first black matrix layer 1. The line width Cy in the y-axis direction of the auxiliary conductor 31 is narrower than the line width Bx in the y-axis direction of the first black matrix layer 1. Since the center of each pixel opening Or, Og, Ob and the center of each opening Or, og, Ob coincide with each other, the inner edge of each opening Or, og, Ob is located outside each pixel opening Or, Og, Ob, In plan view, it is covered by the first black matrix layer 1.

For this reason, as shown in FIG. 2, even when the observer 59 looks in the direction of arrow P from the outside of the display device 200, the auxiliary conductor 31 is aligned with the second black matrix layer 8 and the first black matrix. It is hidden on floor (1) and cannot be seen.

Since the auxiliary conductor 31 contains metal, it has light reflection properties, but is not visible from the outside in plan view, so external light is directly incident and reflected on the auxiliary conductor 31, and is transmitted to the outside through each pixel opening Or, Og, and Ob. There is little chance of being released as a candidate.

On the other hand, the auxiliary conductor 31 reflects the light reflected downward by the light reflective matrix layer 6 upward, so that the use efficiency of light emitted from the light emitting element 24 can be improved.

The wider the line width Cx and Cy of the auxiliary conductor 31 is within the range invisible from the outside, the better the heat dissipation effect described in the first embodiment is.

The display device 200 of the present embodiment is similar to the display device 100 of the first embodiment except that the second black matrix layer 8 is disposed between the first substrate 110 and the color filter 2. It can be manufactured similarly.

According to the display device 200 of the present embodiment, since it includes the same configuration as the display device 100, display brightness can be improved like the display device 100 of the first embodiment.

In particular, in this embodiment, the display device 200 further includes a second black matrix layer 8 between the first black matrix layer 1 and the first substrate 110, and the second black matrix layer ( 8) has a plurality of openings or, og, and ob that overlap with the plurality of pixel openings Or, Og, and Ob in plan view, so that color mixing of display light can be suppressed and display quality can be further improved.

[Third Embodiment]

A display device and a wavelength conversion substrate according to the third embodiment will be described.

9 is a partial cross-sectional view of a display device according to a third embodiment of the present invention.

The display device 300 shown in FIG. 9 is an example of a display device according to this embodiment.

The display device 300 includes a wavelength conversion layer 4 instead of the wavelength conversion layer 3 and the light scattering layer 3B in the display device 200 according to the second embodiment, and transmittance adjustment. It has the same structure as the display device 200 except that the layer 7 is disposed between the color filter 2 and the wavelength conversion layer 4.

However, like the display device 200, the transmittance adjustment layer 7 in this embodiment may be disposed between the first substrate 110, the second black matrix layer 8, and the color filter 2. . Additionally, the transmittance adjustment layer 7 in this embodiment may be omitted, as in the second embodiment.

In the display device 300 of this embodiment, a first substrate 110, a second black matrix layer 8, a color filter 2, a wavelength conversion layer 4, a first black matrix layer 1, and The laminate including the light reflective matrix layer 6 and forming the upper layer of the display device 300 constitutes the wavelength conversion substrate 330 of this embodiment used in the display device 100 of this embodiment. .

Hereinafter, description will be given focusing on differences from the second embodiment.

The wavelength conversion layer 4 is a layered portion disposed between the first black matrix layer 1 and the transmittance adjustment layer 7 and covering the entire plurality of pixel openings Or, Og, and Ob from the z-axis negative direction side. . The wavelength conversion layer 4 is formed by stacking a red conversion layer 3R and a green conversion layer 3G in this order in the negative z-axis direction.

The red conversion layer 3R and the green conversion layer 3G in this embodiment are layers covering the z-axis negative direction side of the first black matrix layer 1 in which a plurality of pixel openings Or, Og, and Ob are formed. Other than this, it is the same as the red conversion layer 3R and the green conversion layer 3G in the second embodiment.

In the second embodiment, the first black matrix layer 1 has a red conversion layer 3R and a green conversion layer 3G formed inside the plurality of pixel openings Or, Og, and Ob. The thickness of (1) needs to be the thickness necessary for wavelength conversion in the red conversion layer 3R and the green conversion layer 3G.

However, the red conversion layer 3R and the green conversion layer 3G are not formed inside the plurality of pixel openings Or, Og, and Ob of the first black matrix layer 1 in this embodiment. Thereby, the thickness of the 1st black matrix layer 1 can be set independently of the thickness of the red conversion layer 3R and the green conversion layer 3G based on the required light-shielding property. In particular, since the light-shielding property of the first black matrix layer 1 is improved by the light reflective matrix layer 6, the thickness of the first black matrix layer 1 is increased by the red conversion layer 3R and the green conversion layer. It can be made thinner than the thickness of (3G).

The thickness of the red conversion layer 3R and the thickness of the green conversion layer 3G can be set based on the required wavelength conversion performance and the content of the red conversion particles 12 and green conversion particles 13, respectively. For this reason, the thickness of the red conversion layer 3R and the thickness of the green conversion layer 3G may be the same or different from each other.

Here, the required wavelength conversion performance may include, for example, converting about 1/3 of the blue light transmitted in the thickness direction into red and green, respectively.

In this embodiment, the wavelength conversion layer 4 of a two-layer structure is sandwiched between the 1st black matrix layer 1 and the 2nd black matrix layer 8. For this reason, compared to the second embodiment, the distance between the first black matrix layer 1 and the second black matrix layer 8 is large, and the display light is scattered inside the wavelength conversion layer 4, so that the pixel in plan view It is easy to spread outward beyond the range of openings Or, Og, and Ob. Accordingly, since the size and shape of the openings or, og, and ob are likely to define the actual size and shape of the pixel, it is better to match the shape and size of the openings or, og, and ob to the pixel openings Or, Og, and Ob. Particularly desirable.

The display device 300 of the present embodiment is manufactured in the same manner as the display device 200 of the second embodiment except that the wavelength conversion layer 4 is disposed between the first substrate 110 and the color filter 2. can do.

In the display device 300, the blue light emitted from each light-emitting element 24 passes through the pixel openings Or, Og, and Ob, respectively, and the red conversion layer 3R, which is a long-wavelength conversion layer, and the red conversion layer 3R, which is a short-wavelength conversion layer. It passes through the green conversion layer (3G) in this order.

In the red conversion layer 3R, for example, about 1/3 of blue light is converted into red light.

In the green conversion layer 3G, for example, about 1/3 of the incident blue light is converted into green light. At this time, since the red light does not contain a short-wavelength component whose wavelength can be converted in the green conversion layer 3G, it transmits the green conversion layer 3G as red light.

As a result, red light and green light formed by wavelength conversion and blue light whose wavelength has not been converted reach the color filter 2. As a result, red light is emitted from the red filter (R), green light is emitted from the green filter (G), and blue light is emitted from the blue filter (B).

For this reason, the display device 300 can perform color display similar to that of the display device 200.

According to the display device 300 of the present embodiment, since it includes the same configuration as the display device 200, display brightness can be improved like the display device 200 of the second embodiment.

In particular, in this embodiment, the red conversion layer 3R and the green conversion layer 3G do not need to be patterned, so the display device 200 that requires patterning the red conversion layer 3R and the green conversion layer 3G Compared to this, manufacturing becomes easier.

In addition, since the layer thickness of the first black matrix layer 1 can be reduced, it can be manufactured more easily.

In this embodiment, it is necessary to increase the amount of light emitted from the light emitting element 24 compared to the display device 200, for example, in the heat dissipation film 10, the auxiliary conductor 31, and the light reflective matrix layer 6. By providing a metal thin film, etc., heat dissipation can be promoted.

[Fourth Embodiment]

A display device and a wavelength conversion substrate according to the fourth embodiment will be described.

10 is a partial cross-sectional view of a display device according to a fourth embodiment of the present invention.

The display device 400 shown in FIG. 10 is an example of a display device according to this embodiment.

The display device 400 includes a wavelength conversion layer 5 instead of the wavelength conversion layer 4 in the display device 300 according to the third embodiment, and a second black matrix layer 8. Except that it is disposed between the transmittance adjustment layer 7 and the color filter 2, it has the same structure as the display device 300.

However, the positional relationship between the color filter 2, the transmittance adjustment layer 7, and the second black matrix layer 8 shown in FIG. 10 in the z-axis direction is an example, and their positions in the z-axis direction are It is possible to change the configuration appropriately. For example, the positional relationship may be similar to that of the display devices 200 and 300.

In the display device 400 of this embodiment, a first substrate 110, a second black matrix layer 8, a color filter 2, a wavelength conversion layer 5, a first black matrix layer 1, and The laminate including the light reflective matrix layer 6 and forming the upper layer of the display device 400 constitutes the wavelength conversion substrate 430 of this embodiment used in the display device 100 of this embodiment. .

Hereinafter, description will be given focusing on differences from the third embodiment.

The wavelength conversion layer 5 is composed of a layered portion in which red conversion particles 12 and green conversion particles 13 are dispersed in a resin 15.

The content of the red conversion particles 12 and the green conversion particles 13 is such that approximately 1/3 of the blue light passing through the thickness direction of the wavelength conversion layer 5 is converted into red and green, respectively, and the other blue light is converted into wavelengths. It may be set to be transparent rather than transparent.

The display device 400 has a wavelength conversion layer 5 formed instead of the wavelength conversion layer 4, and the formation order of the color filter 2, the transmittance adjustment layer 7, and the second black matrix layer 8 is different. Other than this, it can be manufactured in the same manner as the display device 300.

In the display device 400 according to the present embodiment, since the wavelength conversion layer 5 is one layer, the process of applying the paint for forming the wavelength conversion layer 5 is reduced, so it can be manufactured more quickly and easily. there is.

In the display device 400, the blue light emitted from each light-emitting element 24 passes through the pixel openings Or, Og, and Ob, respectively, and the wavelength conversion layer in which the red conversion particles 12 and green conversion particles 13 coexist. (5) is transmitted. For this reason, while blue light passes through the wavelength conversion layer 5, approximately 2/3 of the wavelength is converted into red light and green light. About 1/3 of the remaining blue light is not wavelength converted. For this reason, red light, green light, and blue light that have transmitted through the wavelength conversion layer 5 are emitted from the red filter (R), green filter (G), and blue filter (B), respectively.

For this reason, the display device 400 can perform color display similar to that of the display device 300.

In this embodiment, since the wavelength conversion layer 5 has a one-layer structure, the layer thickness of the wavelength conversion layer 5 becomes thinner compared to the wavelength conversion layer 4 of the display device 300. For this reason, the degree of scattering of the transmitted light in the wavelength conversion layer 5 is further reduced, and thus the incidence of stray light is suppressed.

According to the display device 300 of the present embodiment, since it includes the same configuration as the display device 300, display brightness can be improved like the display device 300 of the third embodiment.

In particular, in this embodiment, since the generation of stray light is suppressed, light loss blocked by the second black matrix layer 8 can be reduced, and a brighter display is possible.

In addition, in the above-mentioned first and second embodiments, the color filter 2 was described as an example in which the color filter 2 was disposed between the upper surface 1a of the first black matrix layer 1 and the first substrate 110. However, if the color filter 2 is closer to the first substrate 110 than the wavelength conversion layer 3 and the light scattering layer 3B, a red filter R is provided inside the plurality of openings Or, Og, and Og, respectively. A green filter (G) and a blue filter (B) may be placed.

In each of the above-described embodiments, it was mainly explained that the light-emitting element 24 was a blue LED. However, in each embodiment, the light emitting element 24 may be a near-ultraviolet LED.

In this case, conversion particles that convert near-ultraviolet light into red and green are used as the red conversion particles 12 and green conversion particles 13 in each wavelength conversion layer, respectively.

Additionally, in the first and second embodiments, a blue conversion layer containing blue conversion particles is used instead of the light scattering layer 3B.

In the third embodiment, a blue conversion layer containing blue conversion particles is laminated between the green conversion layer 3G and the transmittance adjustment layer 7.

In the fourth embodiment, blue conversion particles are further laminated on the resin 15.

However, when using a near-ultraviolet LED, it is more preferable to use the above-described configuration that is a modification of the first or second embodiment.

In each of the above-described embodiments, an example in which the wavelength conversion layer includes light scattering particles 17 was explained. However, if the radiation angle of the display light when emitted to the outside of the display device is distributed within the viewing angle range required for the display device, the light scattering particles 17 in the wavelength conversion layer may be omitted.

In the above-described first and second embodiments, the light reflective matrix layer 6 was explained as an example of a single-layer, two-layer, or three-layer structure including at least a metal thin film. However, the layer structure of the light reflective matrix layer 6 is not limited to this. To the illustrated layer structure, other thin films such as metal thin films and conductive oxide thin films may be further added.

The same applies to the conductive wiring, which can use the same layer configuration as the light reflective matrix layer 6.

In each of the above-described embodiments, an example was provided in which the display device performs full-color display using a combination of red, green, and blue display lights. However, depending on the purpose of the display device, the color type and number of colors of the display light are not limited to these.

For example, the wavelength conversion characteristics of the conversion element, the wavelength characteristics of the color filter, etc. can be appropriately changed depending on the color type of the display light.

The display device provided with the wavelength conversion substrate according to each of the above-described embodiments is capable of various applications. Electronic devices to which the display device according to each of the above-described embodiments can be applied include mobile phones, portable game devices, portable information terminals, personal computers, electronic books, video cameras, digital still cameras, head-mounted displays, navigation systems, and sound reproduction devices. Examples include electronic devices such as (car audio, digital audio players, etc.), copiers, fax machines, printers, printer combination printers, vending machines, automated teller machines (ATMs), personal authentication devices, optical communication devices, and IC cards.

Each of the above embodiments can be freely combined and used. It is preferable that the electronic device equipped with the display device according to the embodiment of the present invention is further equipped with an antenna to perform communication or non-contact power reception.

Although preferred embodiments of the present invention have been described and described above, it should be understood that these are illustrative of the present invention and should not be considered limiting. Additions, omissions, substitutions and other changes can be made without departing from the scope of the present invention. Accordingly, the present invention should not be considered limited by the foregoing description, but is defined by the claims.

According to the display device and wavelength conversion substrate of the present invention, display devices and wavelength conversion that can improve display brightness in display devices such as micro LED (LED display), mini LED, and liquid crystal display devices that require increased precision. A substrate can be provided.

1: First black matrix layer
2: Color filter
3, 4, 5: Wavelength conversion layer
3B: Light scattering layer
3G: Green conversion layer
3R: red conversion layer
6: Light reflective matrix layer
7: Transmittance adjustment layer
8: Second black matrix layer
10: Heat dissipation membrane
11: circular polarizer
12: Enemy Transformation Particles
13: Rust conversion particles
17: Light scattering particles
18: First conductive oxide thin film
19, 22: metal thin film
20: Second conductive oxide thin film
21: thin film
23: upper electrode
24: Light emitting element (LED)
28: lower electrode
29: reflective electrode
31: Auxiliary conductor
37: Bulkhead
49: thin film transistor
50: first thin film transistor
51: second thin film transistor
52: capacitive element
59: Observer
100, 200, 300, 400: display device
100A: Top Laminate
100B: Lower Laminate
110: first substrate
120: second substrate
130: Wavelength conversion substrate
B: blue filter
G: Rust filter
or, og, ob: opening
Or, Og, Ob: Pixel opening
R: enemy filter

Claims (15)

a transparent first substrate,
a color filter facing the first substrate in the thickness direction of the first substrate;
a first black matrix layer disposed opposite the first substrate and having a plurality of pixel openings opening toward the color filter;
A light reflective matrix layer laminated on a surface of the first black matrix layer opposite to the first substrate excluding the plurality of pixel openings,
So that it overlaps at least one pixel opening of the plurality of pixel openings in a plan view viewed from the direction toward the first black matrix layer from the first substrate along the normal line of the surface of the first substrate in the thickness direction, a wavelength conversion layer disposed between the color filter and the light reflective matrix layer and converting a wavelength of light passing through the at least one pixel opening and heading toward the color filter;
a plurality of LEDs that emit light toward each of the plurality of pixel openings from a side opposite to the first substrate across the first black matrix layer;
A display device comprising the plurality of LEDs and a second substrate disposed opposite to the first substrate. According to paragraph 1,
A display device wherein the light reflective matrix layer includes a metal thin film formed of aluminum or aluminum alloy. According to paragraph 1,
A display device wherein the light reflective matrix layer includes a metal thin film formed of silver or a silver alloy. According to paragraph 1,
A display device in which the light reflective matrix layer includes a thin film of titanium or titanium nitride laminated on the first black matrix layer, and a metal thin film made of aluminum or aluminum alloy laminated on the thin film. According to paragraph 1,
The light reflective matrix layer includes a first conductive oxide thin film containing indium oxide, a metal thin film formed of silver or a silver alloy laminated on the first conductive oxide thin film, and indium oxide laminated on the metal thin film. A display device comprising a second conductive oxide thin film. According to paragraph 1,
Each of the plurality of LEDs is a blue light-emitting LED,
A display device in which the wavelength conversion layer includes red conversion particles that convert blue light into red light, and green conversion particles that convert blue light into green light. According to paragraph 1,
Each of the plurality of LEDs is a blue light-emitting LED,
The wavelength conversion layer is directed from the plurality of LEDs to the color filter, and includes a red conversion layer in which light scattering particles and red conversion particles are dispersed in a transparent resin, and a green conversion layer in which light scattering particles and green conversion particles are dispersed in a transparent resin. A display device containing the layers in this order. According to paragraph 1,
Each of the plurality of LEDs is a blue light-emitting LED,
The wavelength conversion layer is divided into a red conversion layer in which light scattering particles and red conversion particles are dispersed in a transparent resin, and a green conversion layer in which light scattering particles and green conversion particles are dispersed in a transparent resin,
A display device in which any of the red conversion layer, the green conversion layer, and a light scattering layer in which light scattering particles are dispersed in a transparent resin are disposed inside the plurality of pixel openings. According to paragraph 1,
Each of the plurality of LEDs is an LED that emits purple to near-ultraviolet light,
The wavelength conversion layer includes red conversion particles that convert violet to near-ultraviolet light into red light, green conversion particles that convert violet to near-ultraviolet light into green light, and violet to near-ultraviolet light to blue light. A display device comprising blue conversion particles. According to paragraph 1,
Between the first black matrix layer and the first substrate, a second black matrix layer is further provided,
The display device wherein the second black matrix layer includes a plurality of openings that each overlap with the plurality of pixel openings in the plan view. According to paragraph 1,
The display device further includes a transmittance adjustment layer disposed between the first substrate and the wavelength conversion layer and regulating transmission of external light. According to clause 11,
A display device, wherein the transmittance adjustment layer includes carbon. According to paragraph 1,
The second substrate includes thin film transistors that respectively drive the plurality of LEDs,
The thin film transistor is a display device including a conductive portion formed of silver, a silver alloy, copper, and a copper alloy, and a conductive wiring sandwiching the conductive portion with a conductive oxide. According to paragraph 1,
A display device in which a heat dissipation film is formed on a surface of the second substrate opposite to a surface facing the first substrate. a transparent first substrate,
a color filter facing the first substrate,
a first black matrix layer disposed opposite to the first substrate with the color filter interposed therebetween, and having a plurality of pixel openings opening toward the color filter;
A light reflective matrix layer laminated on a surface of the first black matrix layer opposite to the first substrate excluding the plurality of pixel openings,
disposed between the light reflective matrix layer and the color filter so as to overlap with at least one pixel opening of the plurality of pixel openings in a planar view of the light reflective matrix layer from the first substrate, and A wavelength conversion substrate comprising a wavelength conversion layer that converts the wavelength of light passing through one pixel opening and heading toward the color filter.

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