KR20230130298A - Gas supply apparatus - Google Patents

Abstract

The gas supply device includes a cleaning gas supply source that supplies a cleaning gas, a process gas supply source that supplies a process gas, a first flow path through which the cleaning gas flows, and is installed at a first position within the first flow path to provide the first flow path. A gate valve that passes or blocks the cleaning gas by opening and closing a flow path, a second flow path that flows the process gas and joins the first flow path at a second position downstream from the first position, and the gate valve. It consists of a shower head unit that sprays the passed cleaning gas or the process gas into the chamber.
In particular, the gate valve includes a cavity formed in the internal space, an inlet hole for introducing a purge gas into the cavity, and a plurality of injection holes that communicate with the cavity and open to the lower surface of the gate valve to spray the purge gas downward. It is made of balls.

Description

Gas supply apparatus {Gas supply apparatus}

The present invention relates to a substrate processing device for depositing, etching, or cleaning a thin film on a substrate, and particularly to a gas supply device for spraying a cleaning gas and/or a process gas on the substrate.

In general, thin film deposition methods for depositing a thin film by supplying a reaction gas to a substrate include atomic layer deposition (ALD) and chemical vapor deposition (CVD). The atomic layer thin film deposition method is a method of adsorbing and depositing on a substrate by alternately supplying and purging a reaction gas to the substrate, and the chemical vapor deposition method is a method of depositing on a substrate by simultaneously spraying reaction gases.

Semiconductor equipment that performs this thin film deposition method includes, for example, a process chamber having a heater member for mounting a semiconductor wafer (hereinafter referred to as a wafer) therein, and supplying a process gas toward the wafer surface provided opposite the heater member. It is equipped with a gas supply device that operates. In this gas supply device, a gas flow path may be formed so that multiple types of process gases do not mix with each other and are spread horizontally and uniformly supplied to the wafer surface.

Additionally, the gas supply device generally uses a remote plasma method for in-situ cleaning. The remote plasma method is a technology that cleans deposition materials inside the process chamber by supplying a cleaning gas excited by plasma into the process chamber. Specifically, during cleaning, the gate valve opens and plasma-excited cleaning gas is supplied into the chamber, and during the deposition process, the gate valve closes and process gas is supplied through the process gas flow path joining at a point downstream of the gate valve. The deposition process proceeds.

However, since the gate valve is in a closed state during the deposition process, a problem occurs in which process gas is unnecessarily deposited on the lower surface of the gate valve while depositing the wafer. In this way, if foreign substances are deposited on the lower surface of the gate valve, not only may the operation of the gate valve itself be impaired, but the foreign substances may later separate and fall, blocking part of the flow path connected to the shower head or contaminating the wafer being deposited. Problems may also arise.

To solve this problem, a method of separately spraying purge gas on the bottom of the gate valve can be considered. However, it is not easy to uniformly supply the purge gas to the bottom of the gate valve, and it is difficult to prevent unnecessary deposition as described above. There is a limitation that the flow rate of purge gas required for this is very large.

U.S. Patent Publication No. 2011-0126764 (published on June 2, 2011)

The technical problem to be achieved by the present invention is to prevent the phenomenon of deposition of the lower surface of the gate valve during the deposition process by supplying a purge gas to the gate valve used in semiconductor processing equipment having a remote plasma device for on-site cleaning.

Another technical problem to be achieved by the present invention is to form a purge gas supply passage in the gate valve itself used in semiconductor processing equipment having a remote plasma device for on-site cleaning and spray purge gas through the supply passage to purge the gate during the deposition process. The purpose is to prevent deposition on the bottom of the valve.

The technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A gas supply device according to an embodiment of the present invention for achieving the above technical problem includes a cleaning gas source that supplies a cleaning gas; a process gas source supplying process gas; a first flow path through which the cleaning gas flows; a gate valve installed at a first position in the first flow path to allow or block the cleaning gas by opening and closing the first flow path; a second flow path flowing the process gas and joining the first flow path at a second location downstream from the first location; and a shower head unit that sprays the cleaning gas or the process gas that has passed through the gate valve into the chamber, wherein the gate valve includes: a cavity formed in an internal space; an inlet hole for introducing a purge gas into the cavity; and a plurality of injection holes that communicate with the cavity and open to the lower surface of the gate valve to spray the purge gas downward.

The gas supply device includes a purge gas source that supplies the purge gas; And it further includes a third flow path that flows the supplied purge gas into the inlet hole.

The process gas is supplied when the gate valve is closed and is injected into the chamber through the shower head unit.

The purge gas is sprayed onto the lower surface of the gate valve when the gate valve is closed, thereby preventing deposition of the process gas on the lower surface of the gate valve.

The cavity is formed parallel to the transverse direction of the gate valve at a position closer to the lower surface than the upper surface of the gate valve.

The plurality of injection holes are aligned in a vertical direction from the cavity toward the lower surface of the gate valve.

The plurality of injection holes are arranged at equal intervals on the lower surface of the gate valve.

The plurality of injection holes are arranged at narrower intervals from the center to the outer surface of the gate valve.

The plurality of injection holes are arranged at wider intervals from the center to the outside on the lower surface of the gate valve.

The lower surface of the gate valve has a concave shape toward the upper surface of the gate valve, and the plurality of injection holes have a greater height from the center to the outside with respect to the lower surface of the gate valve.

The plurality of injection holes are aligned in a flare shape extending from the cavity toward the lower surface of the gate valve.

The plurality of injection holes are aligned in a tapered shape that narrows from the cavity toward the lower surface of the gate valve.

According to the gas supply device used in the thin film deposition process according to the present invention, various problems due to the generation of foreign substances can be prevented by preventing deposition on the lower surface of the gate valve.

In addition, according to the gas supply device used in the thin film deposition process according to the present invention, the supply flow rate of the purge gas to prevent deposition of the gate valve can be minimized, so the concentration of process gases such as source gas and reaction gas can be relatively reduced. There is an effect of improving step coverage, which can be increased.

In addition, according to the gas supply device used in the thin film deposition process according to the present invention, the supply flow rate of purge gas to prevent deposition of the gate valve can be minimized, and the process pressure can be reduced, thereby increasing the process window. It also has an effect.

Figure 1 is a front view showing a gas supply device according to an embodiment of the present invention.
FIG. 2 is a longitudinal cross-sectional view of the gas supply device of FIG. 1 cut in the longitudinal direction.
Figure 3 is a view viewed from the bottom of a gate valve installed in a gas supply device.
Figures 4a to 4c are longitudinal cross-sectional views showing an embodiment in which a plurality of injection holes are formed in a vertical direction in a gate valve according to an embodiment of the present invention.
Figures 5a and 5b are longitudinal cross-sectional views showing an embodiment in which a plurality of injection holes are formed in an inclined direction in a gate valve according to another embodiment of the present invention.
Figure 6 is a longitudinal cross-sectional view showing a gate valve according to another embodiment of the present invention in which the lower surface of the valve with a plurality of injection holes is formed to be concave upward.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.

The terminology used herein is for describing embodiments and is not intended to limit the invention. As used herein, singular forms also include plural forms, unless specifically stated otherwise in the context. As used in the specification, “comprises” and/or “comprising” does not exclude the presence or addition of one or more other elements in addition to the mentioned elements.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings.

Figure 1 is a front view showing a gas supply device 100 according to an embodiment of the present invention. Referring to FIG. 1, the gas supply device 100 includes a cleaning gas source 11 that supplies a cleaning gas, a process gas source 12 that supplies a process gas, and a purge gas source 13 that supplies a purge gas. ) and a shower head unit 40.

The cleaning gas may be a gas excited by plasma according to a remote plasma method for on-site cleaning, and the process gas may include a source gas and a reactant gas. Additionally, the purge gas may be an inert gas with low reactivity that is injected to block the inflow of gas in a specific direction.

The cleaning gas, the process gas, and the purge gas may be supplied from respective supply sources 11, 12, and 13 through respective supply pipes 21, 22, and 23.

The shower head unit 40 has a function of evenly spraying cleaning gas or the process gas onto wafers (not shown) placed in a process chamber (not shown) located below. In particular, the shower head unit 40 supplies process gas to the wafer when in the process mode, and supplies cleaning gas to the wafer when in the cleaning mode.

FIG. 2 is a longitudinal cross-sectional view of the gas supply device 100 of FIG. 1 cut in the longitudinal direction. As shown in FIG. 2, the cleaning gas supplied from the cleaning gas source 11 may be supplied to the shower head unit 40 through the first flow path 31 in the first supply pipe 21. At this time, a gate valve 50 is installed at a point on the upstream side of the first flow path 31. The gate valve 50 has a function of allowing the cleaning gas to pass through or blocking it by opening and closing the first flow path 31.

Meanwhile, the process gas supplied from the process gas source 12 may be supplied to the first flow path 31 through the second flow path 32 in the second supply pipe 22. At this time, the second flow path 32 joins the first flow path 31 at a position downstream of the gate valve 50. The process gas may be supplied when the gate valve 50 is closed and injected into the process chamber through the shower head unit 40. On the other hand, the cleaning gas may be supplied when the gate valve 50 is open and injected into the process chamber through the shower head unit 40. Of course, when supplying such cleaning gas, the supply of process gas must be blocked through a separate valve device.

The shower head unit 40 supplies the cleaning gas or process gas supplied through the common first flow path 31 into the lower process chamber. Specifically, the shower head unit 40 may be composed of a combination of an inlet port block 41, a diffusion block 43, and a spray nozzle 45. The lower end of the first flow path 31 is coupled to the inlet port block 41, and the lower end of the first flow path 31 communicates with the diffusion area 16 of the diffusion block 43. The gas supplied through the first flow path 31 diffuses from the center outward by the diffusion region 16. The gas diffused outward in this way collects in the buffer space 17 between the diffusion block 43 and the injection nozzle 45 and is then finally sprayed downward through the plurality of nozzle holes 18 formed in the injection nozzle 45. do.

According to one embodiment of the present invention, in order to prevent the lower surface of the gate valve 50 from being deposited when the process gas is supplied with the gate valve 50 closed, an internal cavity of the gate valve 50 itself is formed. ) A purge gas is injected from the bottom of the gate valve 50. For this purpose, the purge gas source 13 and the cavity of the gate valve 50 are connected through a third flow path 23 formed by the supply pipe 23. In addition, as shown in FIG. 3, a plurality of injection holes 51 are formed in the lower surface 52 of the gate valve 50 in communication with the cavity therein, so that the purge gas collected in the cavity is discharged into the plurality of injection holes 51. It is sprayed through the injection hole 51. In this way, through a structure that allows the purge gas to be sprayed from the gate valve 50 itself, the purge gas is supplied evenly throughout the valve bottom 52, so that deposition on the valve bottom 52 can be sufficiently blocked even with a small gas flow rate. There will be.

The detailed configuration of the gate valve 50 will be described in more detail with reference to FIGS. 4A to 6 described later. First, FIGS. 4A to 4C are longitudinal cross-sectional views showing an embodiment in which a plurality of injection holes 51 are formed in the vertical direction in the gate valve 50 according to an embodiment of the present invention.

Referring to FIG. 4A, the gate valve 50a includes a cavity 54 formed in the internal space, an inlet hole 53 connected to the third flow path 33 and flowing a purge gas into the cavity 54, and It includes a plurality of injection holes 51a that communicate with the cavity 54 and open to the lower surface 52 of the gate valve to inject the purge gas downward.

The purge gas is injected to the lower surface 52 of the gate valve 50a when the gate valve 50a is closed, thereby preventing deposition of the lower surface 52 of the gate valve 50a by the process gas. can do. In particular, the cavity 54 may be formed parallel to the transverse direction of the gate valve 50a at a position closer to the lower surface than the upper surface of the gate valve 50a.

The plurality of injection holes 51 are aligned in a vertical direction from the cavity 54 toward the lower surface 52 of the gate valve. Therefore, since the purge gas is injected downward from the gate valve 50a, it is possible to fundamentally block the process gas supplied through the second flow path 32 from the downstream side from flowing into the gate valve 50a. .

At this time, the plurality of injection holes 51a may be arranged at equal intervals on the lower surface 52 of the gate valve 50a, as shown in FIG. 4A. However, it is not limited to this, and like the gate valve 50b of Figure 4b, the plurality of injection holes 51 may be arranged at narrower intervals from the center to the outside with respect to the lower surface 52 of the gate valve. . At this time, the density of the plurality of injection holes 51b arranged in the outermost area may be less than about twice the density of the plurality of injection holes 51b arranged in the central area. The density of the plurality of injection holes 51b may increase from the central area to the outer area. In this case, since a higher injection pressure is formed outside the center of the valve bottom 52, the possibility of deposition in the outer area of the valve bottom 52 can be more reliably eliminated.

In addition, like the gate valve 50c of FIG. 4C, the plurality of injection holes 51c may be arranged at wider intervals from the center to the outside with respect to the lower surface 52 of the gate valve. At this time, the density of the plurality of injection holes 51c arranged in the central area may be less than about twice the density of the plurality of injection holes 51c arranged in the outermost area. The density of the plurality of injection holes 51c may decrease from the central area to the outer area. In this case, since a higher injection pressure is formed at the center of the valve lower surface 52, the possibility of deposition in the central area of the valve lower surface 52 can be more reliably eliminated.

Figures 5a and 5b are longitudinal cross-sectional views showing an embodiment in which a plurality of injection holes 51 are formed in an inclined direction in the gate valve 50 according to another embodiment of the present invention. Among these, in the gate valve 50d shown in FIG. 5A, a plurality of injection holes 51d are aligned in a flared shape extending from the cavity 54 toward the lower surface 52 of the gate valve. . At this time, the plurality of injection holes 51d disposed in the central area may have a shape extending in the vertical direction, and the plurality of injection holes 51d disposed outside the central area may be located at the edge of the lower surface 52 in the central area. It may have a form that extends obliquely toward the area. In detail, the inner surface of the injection hole 51d disposed in the central area may be perpendicular to the lower surface 52. Additionally, the inner surface and lower surface 52 of the injection hole 51d disposed outside the central area may have an inclination angle of about 55 degrees to about 80 degrees. In this case, since the injection area of the purge gas is expanded, the deposition gas blocking area has the effect of expanding. Preferably, in order to improve the flow characteristics of the purge gas supplied to the first flow path 31 and to prevent material from being deposited on the bottom of the gate valve 50d, the inclination angle may satisfy a range of about 60 degrees to about 75 degrees.

Additionally, in the gate valve 50e shown in FIG. 5B, a plurality of injection holes 51 may be aligned in a tapered shape that is reduced from the cavity 54 toward the lower surface 52 of the gate valve. there is. At this time, the plurality of injection holes 51e disposed in the central area may have a shape extending in the vertical direction, and the plurality of injection holes 51e disposed outside the central area are adjacent to the edge of the lower surface 52 in the central area. It may have a form that extends obliquely toward the area. In detail, the inner surface of the injection hole 51e disposed in the central area may be perpendicular to the lower surface 52. Additionally, the inner surface and lower surface 52 of the injection hole 51e disposed outside the central area may have an inclination angle of about 55 degrees to about 80 degrees. In this case, the injection area of the purge gas is reduced, but the injection pressure is concentrated in the center, which has the effect of increasing. Preferably, in order to improve the flow characteristics of the purge gas supplied to the first flow path 31 and to prevent material from being deposited on the bottom of the gate valve 50e, the inclination angle may satisfy a range of about 60 degrees to about 75 degrees.

Here, the outermost area may mean an area of about 20% or less in the center direction from the diameter of the lower surface (52) of the gate valve (50b), and the central area may mean an area of about 30% or less in the radial direction from the center of the lower surface (52) of the gate valve (50b). It may mean the following area. In addition, density may mean the area occupied by the injection hole (51b) per unit area of the lower surface (52).

Figure 6 is a longitudinal cross-sectional view showing an embodiment in which the lower surface (52f) of the gate valve (50f) in which the plurality of injection holes (51) are formed is concave upward in the gate valve (50f) according to another embodiment of the present invention. The lower surface 52f of the gate valve 50f has a concave shape toward the upper surface of the gate valve. In addition, the plurality of injection holes 51f have a greater height from the center to the outside with respect to the lower surface 52 of the gate valve. For example, the height d2 of the outer injection hole is larger than the height d1 of the injection hole near the center. For example, among the plurality of injection holes 51f disposed on the lower surface 52f, the height d1 of the injection hole 51f disposed in the center may be the smallest, and the height of the injection hole 51f disposed on the outside may be the smallest. (d2) may be the highest. In this case, the purge gas can be sprayed generally downward and at the same time, higher straightness can be guaranteed near the outer side than the center. At this time, the height d2 of the injection hole 51f disposed on the outside may be within about twice the height d1 of the injection hole 51f disposed in the center. When the height difference ratio exceeds 2 times, flow characteristics can be improved. However, the central thickness of the lower surface 52f may be too thin, or the outer area of the lower surface 52 may be too thick, which may reduce the reliability of the device or increase its size and weight, making it difficult to provide it compactly. Therefore, it is desirable that the ratio of the injection hole 51f to the height d1 and d2 satisfies the above-mentioned range.

Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential features. You will be able to understand it. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

11: Cleaning gas source
12: Process gas source
13: Purge gas source
16: Diffusion area
17: Buffer space
18: Nozzle hole
21, 22, 23: Supply pipes
31, 32, 33: Euros
40: Shower head unit
41: Inlet port block
43: Diffusion Block
45: spray nozzle
50, 50a, 50b, 50c, 50d, 50e, 50f: Gate valve
51: injection hole
52: When the valve
53: Inlet hole
54: joint

Claims (12)

a cleaning gas source supplying cleaning gas;
a process gas source supplying process gas;
a first flow path through which the cleaning gas flows;
a gate valve installed at a first position within the first flow path to allow or block the cleaning gas by opening and closing the first flow path;
a second flow path flowing the process gas and joining the first flow path at a second location downstream from the first location; and
A gas supply device including a shower head unit that sprays the cleaning gas or the process gas that has passed through the gate valve into a chamber,
The gate valve is
A cavity formed in the interior space;
an inlet hole for introducing a purge gas into the cavity; and
A gas supply device comprising a plurality of injection holes that communicate with the cavity and open to a lower surface of the gate valve to spray the purge gas downward. According to paragraph 1,
a purge gas source supplying the purge gas; and
A gas supply device further comprising a third flow path that flows the supplied purge gas into the inlet hole. According to paragraph 1,
The process gas is supplied when the gate valve is closed and injected into the chamber through the shower head unit. According to paragraph 2,
The purge gas is sprayed to the lower surface of the gate valve when the gate valve is closed, thereby preventing deposition of the lower surface of the gate valve by the process gas. According to paragraph 1,
The gas supply device wherein the cavity is formed parallel to the transverse direction of the gate valve at a position closer to the lower surface than the upper surface of the gate valve. According to clause 5,
The gas supply device wherein the plurality of injection holes are aligned in a vertical direction from the cavity toward the lower surface of the gate valve. According to clause 6,
A gas supply device wherein the plurality of injection holes are arranged at equal intervals with respect to the lower surface of the gate valve. According to clause 6,
A gas supply device, wherein the plurality of injection holes are arranged at narrower intervals from the center to the outside with respect to the lower surface of the gate valve. According to clause 6,
A gas supply device in which the plurality of injection holes are arranged at wider intervals from the center to the outside on the lower surface of the gate valve. According to clause 6,
A gas supply device wherein the lower surface of the gate valve has a concave shape toward the upper surface of the gate valve, and the plurality of injection holes have a greater height relative to the lower surface of the gate valve from the center to the outside. According to clause 5,
The gas supply device wherein the plurality of injection holes are arranged in a flare shape extending from the cavity toward the lower surface of the gate valve. According to clause 5,
The gas supply device, wherein the plurality of injection holes are arranged in a tapered shape that decreases from the cavity toward the lower surface of the gate valve.